DS-K101-304 Bake Temp. versus Develop Rate
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All wafers were spun at 1.5krpm and baked for 60s at various temperatures (200C, 210C, 220C).
Checked thickness on the ellipsometer, developed in 300MIF for 30s and check thickness again.
Note that with patterned top-layer resists, rates may differ - these are guidelines only.
|Bake Temp||Bake Time||Develop Rate|
|185°C||60 sec||~75 nm/min|
|200°C||60 sec||~20 nm/min|
|210°C||60 sec||~3 nm/min|
|220°C||60 sec||~0.1 nm/min|
Courtesy Brian Burkett, 2019