Difference between revisions of "DS-K101-304 Bake Temp. versus Develop Rate"
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(courtesy brian burkett (omit Google)) |
(→Conditions: added 185*C) |
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Checked thickness on the ellipsometer, developed in 300MIF for 30s and check thickness again. |
Checked thickness on the ellipsometer, developed in 300MIF for 30s and check thickness again. |
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| + | Note that with patterned top-layer resists, rates may differ - these are guidelines only. |
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{| class="wikitable" |
{| class="wikitable" |
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|+Develop rates in AZ 300MiF |
|+Develop rates in AZ 300MiF |
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!Bake Time |
!Bake Time |
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!Develop Rate |
!Develop Rate |
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| + | |- |
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| + | |185°C |
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| + | |60 sec |
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| + | |~75 nm/min |
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|- |
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|200°C |
|200°C |
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Latest revision as of 14:02, 2 October 2019
Conditions
All wafers were spun at 1.5krpm and baked for 60s at various temperatures (200C, 210C, 220C).
Checked thickness on the ellipsometer, developed in 300MIF for 30s and check thickness again.
Note that with patterned top-layer resists, rates may differ - these are guidelines only.
| Bake Temp | Bake Time | Develop Rate |
|---|---|---|
| 185°C | 60 sec | ~75 nm/min |
| 200°C | 60 sec | ~20 nm/min |
| 210°C | 60 sec | ~3 nm/min |
| 220°C | 60 sec | ~0.1 nm/min |
Courtesy Brian Burkett, 2019