Difference between revisions of "Contact Aligner (SUSS MA-6)"

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(Contact info changed to Lee S.)
(verbiage and spec changes)
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= About =
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==About==
This system is a dual-use mask aligner and wafer-bond aligner. Mask alignment is used for contact and proximity exposure processes. Exposures can be done with gaps programmable from 0 um to 300 um in 1 um increments. Automatic wedge compensation is used to ensure that the mask and wafer are parallel. Lithography can be done on wafers from 2” to 6” in diameter. Piece parts are better handled on the MJB-3 aligners. An automated image capture system is used for alignment at 5x, 10x, or 20x magnification. Programs are stored as recipes on the computer controlled unit. The system is fitted with visible, bottom-side optics, back-side alignment capability. The lamp is a 350 W Hg-Arc lamp, providing significant power in the g-h-and i-line regime. Integrated light level sensing ensures proper exposure doses as the lamp degrades. Bond alignment can be done on 3” to 6” wafers. The bond alignment is done with special fixturing to allow aligned samples to be transferred to the Karl-Suss SB6 system.
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This system is a dual-use mask aligner and wafer-bond aligner. Mask alignment is used for contact and proximity exposure processes. Exposures can be performed with gaps programmable from 10 um to 300 um in 1 um increments. Automatic wedge error compensation (WEC) is used to ensure that the mask and wafer are parallel. Lithography can be performed on wafers from 2” to 6” in diameter. Piece parts are better handled on the MJB-3 aligners. An automated image capture system is used for alignment at 5x, 10x, or 20x magnification. The system is fitted with visible, bottom-side optics for back-side alignment capability. The lamp is a 350 W Hg-Arc lamp, providing significant power in the g-h-and i-line regime. Integrated light level sensing ensures proper exposure doses as the lamp degrades. Bond alignment can be performed on 3” to 6” wafers. The bond alignment is performed with special fixturing to allow aligned samples to be transferred to the Karl-Suss SB6 system.
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==Detailed Specifications==
  
=Detailed Specifications=
 
 
*350 W Hg arc lamp, broadband exposure with Suss UV400 Optics
 
*350 W Hg arc lamp, broadband exposure with Suss UV400 Optics
*Automatic Light Intensity Drift Compensation
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*Automatic Light Intensity Drift Compensation:
*Programmable recipes
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**Channel 1 is calibrated to 9 mW/cm² at 365 nm
*Programmable exposure gaps of 0-300 um in 1 um steps
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**Channel 2 is calibrated to 15 mW/cm² at 405 nm
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*Programmable exposure gaps of 10-300 um in 1 um steps
 
*Stored video imaging for precise, repeatable alignment
 
*Stored video imaging for precise, repeatable alignment
 
*Visible Back-Side Alignment System
 
*Visible Back-Side Alignment System
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*Other wafer sizes can be discussed with staff
 
*Other wafer sizes can be discussed with staff
  
=Documentation=
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==Documentation==
  
 
*[https://www.nanotech.ucsb.edu/wiki/Images/uploads/2018/Suss_MA6_SOP_Combined-1-4.pdf Suss MA-6 Standard Operating Procedure (SOP)]
 
*[https://www.nanotech.ucsb.edu/wiki/Images/uploads/2018/Suss_MA6_SOP_Combined-1-4.pdf Suss MA-6 Standard Operating Procedure (SOP)]
 
*[[Suss MA-6 Backside Alignment QuickStart]]
 
*[[Suss MA-6 Backside Alignment QuickStart]]

Revision as of 15:03, 11 September 2019

Contact Aligner (SUSS MA-6)
ContactAligner.jpg
Tool Type Lithography
Location Bay 7
Supervisor Lee Sawyer
Supervisor Phone (805) 893-2123
Supervisor E-Mail lee_sawyer@ucsb.edu
Description Mask Aligner/Bond Aligner (MA/BA-6)
Manufacturer Karl Suss America
Sign up for this tool


About

This system is a dual-use mask aligner and wafer-bond aligner. Mask alignment is used for contact and proximity exposure processes. Exposures can be performed with gaps programmable from 10 um to 300 um in 1 um increments. Automatic wedge error compensation (WEC) is used to ensure that the mask and wafer are parallel. Lithography can be performed on wafers from 2” to 6” in diameter. Piece parts are better handled on the MJB-3 aligners. An automated image capture system is used for alignment at 5x, 10x, or 20x magnification. The system is fitted with visible, bottom-side optics for back-side alignment capability. The lamp is a 350 W Hg-Arc lamp, providing significant power in the g-h-and i-line regime. Integrated light level sensing ensures proper exposure doses as the lamp degrades. Bond alignment can be performed on 3” to 6” wafers. The bond alignment is performed with special fixturing to allow aligned samples to be transferred to the Karl-Suss SB6 system.

Detailed Specifications

  • 350 W Hg arc lamp, broadband exposure with Suss UV400 Optics
  • Automatic Light Intensity Drift Compensation:
    • Channel 1 is calibrated to 9 mW/cm² at 365 nm
    • Channel 2 is calibrated to 15 mW/cm² at 405 nm
  • Programmable exposure gaps of 10-300 um in 1 um steps
  • Stored video imaging for precise, repeatable alignment
  • Visible Back-Side Alignment System
  • Lithography for 2” to 6” diameter wafers
  • Bond alignment for 3” to 6” wafers, integrates with SB6 bond
  • Other wafer sizes can be discussed with staff

Documentation