Difference between revisions of "MLA Recipes"

From UCSB Nanofab Wiki
Jump to navigation Jump to search
(MLa recipes- Bilja trying to link R to recipes)
 
 
(17 intermediate revisions by 2 users not shown)
Line 2: Line 2:
 
Photolithography Recipes for the [[Maskless Aligner (Heidelberg MLA150)|Heidelberg MLA150]]. ''Description of litho params- different lasers available, greyscale etc.''
  
Photolithography Recipes for the [[Maskless Aligner (Heidelberg MLA150)|Heidelberg MLA150]]. ''Description of litho params- different lasers available, greyscale etc.''
 
===Positive Resist (MLA150)===
  
===Positive Resist (MLA150)===
−
''General notes: Hotplates used, filters, laser wavelengths, etc.''
 +
''General notes: Hotplates used, filters, laser wavelengths, etc. “Soft Bake” is right after spin, “PEB” is post-exposure bake - right after exposure''
 
{| class="wikitable" border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
  
{| class="wikitable" border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
 
|- bgcolor="#D0E7FF"
  
|- bgcolor="#D0E7FF"
 
! width="100" |Resist
  
! width="100" |Resist
 
! width="100" |Spin Cond.
  
! width="100" |Spin Cond.
−
! width="75" |Bake
 +
! width="75" |Soft Bake
 
! width="75" |Thickness
  
! width="75" |Thickness
 
!Laser (nm)
  
!Laser (nm)
 
! width="125" |Exposure Dose (mJ/cm<sup>2</sup>)
  
! width="125" |Exposure Dose (mJ/cm<sup>2</sup>)
 
! width="100" |DeFocus
  
! width="100" |DeFocus
−
! width="75" |PEB
 +
! width="75" |Post-Exposure Bake
 
! width="100" |Developer
  
! width="100" |Developer
 
! width="125" |Developer Time
  
! width="125" |Developer Time
Line 52: Line 52:
 
|
  
|
 
|
  
|
  +
|-
 
|-
  
|-
 
|[[:File:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
  
|[[:File:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
Line 64: Line 65:
 
|60s
  
|60s
 
|Used MLA design
  
|Used MLA design
  +
|-
  +
|[[:File:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
  +
|3.5 krpm/30s
  +
|115°C/2m
  +
|~7 µm
  +
|405
  +
|440
  +
|5
  +
|50°C/1m, ramp up, 115°C/90s
  +
|AZ300MIF
  +
|70s
  +
|UCSB design 1um pillars/5um trenches]
 
|-
  
|-
 
|[[:File:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
  
|[[:File:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
Line 75: Line 88:
 
|AZ300MIF
  
|AZ300MIF
 
|60s
  
|60s
−
|Used MLA design
 +
|Used MLA design, [for 5um pillars/1um trench:150/5]
 
|-
  
|-
 
|[[:File:3600 D, D2v Spin Speed Curve.pdf|THMR-3600HP]]
  
|[[:File:3600 D, D2v Spin Speed Curve.pdf|THMR-3600HP]]
Line 90: Line 103:
 
low dose for clear-field, high does for dark-field
  
low dose for clear-field, high does for dark-field
 
|}
  
|}
  +
 
===Negative Resist (MLA150)===
  
===Negative Resist (MLA150)===
−
''General notes: Hotplates used, filters, laser wavelengths, etc.''
 +
''General notes: Hotplates used, filters, laser wavelengths, etc. “Soft Bake” is right after spin, “PEB” is post-exposure bake - right after exposure. “Flood exposure” is only for AZ5214 for image reversal, after PEB.''
 
{| class="wikitable" border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
  
{| class="wikitable" border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
 
|- bgcolor="#D0E7FF"
  
|- bgcolor="#D0E7FF"
 
! width="100" |Resist
  
! width="100" |Resist
 
! width="100" |Spin Cond.
  
! width="100" |Spin Cond.
−
! width="75" |Bake
 +
! width="75" |Soft Bake
 
! width="75" |Thickness
  
! width="75" |Thickness
 
!Laser (nm)
  
!Laser (nm)
Line 154: Line 168:
 
! width="75" |Bake
  
! width="75" |Bake
 
! width="75" |Thickness
  
! width="75" |Thickness
  +
! width="75" |Laser
 
! width="125" |Exposure Dose (mJ/cm<sup>2</sup>)
  
! width="125" |Exposure Dose (mJ/cm<sup>2</sup>)
 
! width="100" |Focus Offset
  
! width="100" |Focus Offset
  +
! width="75" |Rehydrate
 
! width="75" |PEB
  
! width="75" |PEB
 
! width="75" |Flood
  
! width="75" |Flood
Line 165: Line 181:
 
|– krpm/30”
  
|– krpm/30”
 
|95°C/60”
  
|95°C/60”
  +
|
 
|
  
|
 
|
  
|
Line 174: Line 191:
 
| align="left" |
  
| align="left" |
 
*TBD
  
*TBD
  +
|-
  +
|SPR 220-7
  +
|–3.5krpm/30”
  +
|105°C/120” Cool 1min
  +
|~7um
  +
|375
  +
|624mJ to clear large mm area, 520mJ to clear ~5um lines
  +
|neg 20
  +
|>1hr
  +
|115C/90s
  +
|AZ300MIF
  +
|70s
  +
|align="left"|
  +
*TBD
  +
|Rehydration after exposure is necessary, to prevent bubbles at PEB
 
|}
  
|}

Latest revision as of 10:56, 24 May 2024

Maskless Aligner (Heidelberg MLA150)

Photolithography Recipes for the Heidelberg MLA150. Description of litho params- different lasers available, greyscale etc.

Positive Resist (MLA150)

General notes: Hotplates used, filters, laser wavelengths, etc. “Soft Bake” is right after spin, “PEB” is post-exposure bake - right after exposure

Resist Spin Cond. Soft Bake Thickness Laser (nm) Exposure Dose (mJ/cm2) DeFocus Post-Exposure Bake Developer Developer Time Comments
AZ4110 4 krpm/30s 95°C/60s ~ 1.1 µm 405 240 5 none AZ400K:DI 1:4 50s Used MLA design (good for isolated lines 0.8-1um)
AZ4330 4 krpm/30s 95°C/60s ~ 3.3 µm 405 320 6 none AZ400K:DI 1:4 90s Used MLA design
AZ4620
SPR 220-3.0 2.5 krpm/30s 115°C/90” ~ 2.7 µm 405 325 - 4 115°C/90s AZ300MIF 60s Used MLA design
SPR 220-7.0 3.5 krpm/30s 115°C/2m ~7 µm 405 440 5 50°C/1m, ramp up, 115°C/90s AZ300MIF 70s UCSB design 1um pillars/5um trenches]
SPR 955-CM0.9 3 krpm/30s 95°C/90” ~ 0.9 µm 405 250 - 7 110°C/90s AZ300MIF 60s Used MLA design, [for 5um pillars/1um trench:150/5]
THMR-3600HP 1.5 krpm/45s250 rpm/s 100°C/60s 0.430µm 405 180–220 -4 100°C/60s AZ300MiF 20s line/space:

low dose for clear-field, high does for dark-field

Negative Resist (MLA150)

General notes: Hotplates used, filters, laser wavelengths, etc. “Soft Bake” is right after spin, “PEB” is post-exposure bake - right after exposure. “Flood exposure” is only for AZ5214 for image reversal, after PEB.

Resist Spin Cond. Soft Bake Thickness Laser (nm) Exposure Dose (mJ/cm2) DeFocus PEB Flood Developer Developer Time Comments
AZ5214 6 krpm/30s 95°C/60s ~ 1.0 µm 375 35 - 5 110°C/60s 60" AZ300MIF 60s Used UCSB design. Good for up to ~1.3um open line space.
AZnLOF2020 4 krpm/30s 110°C/60s ~ 2.1µm 375 340 - 3 110°C/60s none AZ300MIF 90s Used UCSB design. Good for 2um open line space.
SU-8 2075 ~70µm 375 Extremely viscous. Pour into a wide-mouthed bottle, dispense directly from bottle. Replace napkin at end.

Greyscale Lithography (MLA150)

Description...

Resist Spin Cond. Bake Thickness Laser Exposure Dose (mJ/cm2) Focus Offset Rehydrate PEB Flood Developer Developer Time Comments
AZ4620 – krpm/30” 95°C/60” 60" AZ300MIF 60"
  • TBD
SPR 220-7 –3.5krpm/30” 105°C/120” Cool 1min ~7um 375 624mJ to clear large mm area, 520mJ to clear ~5um lines neg 20 >1hr 115C/90s AZ300MIF 70s
  • TBD
 Rehydration after exposure is necessary, to prevent bubbles at PEB
Retrieved from "https://wiki.nanofab.ucsb.edu/w/index.php?title=MLA_Recipes&oldid=162020"