Difference between revisions of "Stepper 3 (ASML DUV)"

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m (moved Test Reticles into Process info, othe rminor changes)
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=== Troubleshooting and Recovery ===
 
=== Troubleshooting and Recovery ===
 
* [[ASML Stepper 3 Error Recovery, Troubleshooting and Calibration|Error Recovery, Troubleshooting and Calibration]]
 
* [[ASML Stepper 3 Error Recovery, Troubleshooting and Calibration|Error Recovery, Troubleshooting and Calibration]]
** ''Common errors, Wafer Retrieval, General error recovery, and system calibration check''
+
** ''Common errors/System Warnings, Wafer Handler Reset system calibration check''
   
* [[ASML 5500: Recovering from an Error]]
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* [[ASML 5500: Recovering from an Error|ASML 5500: Recovering from an Error/Wafer Retrieval]]
 
** ''How to abort the job and recover your wafer.''
 
** ''How to abort the job and recover your wafer.''
 
* [[ASML 5500: Recovering from a Typo in Reticle ID]]
 
** ''If you ran a job and got "Reticle Not Present" due to a typo in your job/layer/image's reticle ID.''
 
 
* [[ASML 5500: Choose Marks for Prealignment]]
 
** ''If your job aborted with "Alignment failure" on the E- or P-Chuck, because it your alignment marks are damaged, this is how to edit your job to use different alignment marks.''
 

Revision as of 07:33, 5 October 2018

Stepper 3 (ASML DUV)
ASML.jpg
Tool Type Lithography
Location Bay 3
Supervisor Brian Thibeault
Supervisor Phone (805) 893-2268
Supervisor E-Mail thibeault@ece.ucsb.edu
Description ASML PAS 5500/300 DUV Stepper
Manufacturer ASML
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About

The ASML 5500 stepper is a 248nm DUV stepper for imaging dense features down to below 200nm and isolated line structures down to below 150nm. Overlay accuracy is better than 30nm.

The system is configured for 4” wafers and, with staff support, mounted pieces down to 14mm in size can be exposed using a 4” wafer as a carrier. The system is designed for high throughput, so shooting multiple 4" wafers is extremely fast. Additionally, exposure jobs are highly programmable, allowing for very flexible exposures of multiple aligned patterns from multiple masks in a single session, allowing for process optimization of large vs. small features in a single lithography.

The full field useable exposure area is limited to the intersection of a 31mm diameter circle and a rectangle of dimensions 22mm x 27mm. See the Mask Making Guidelines page for more info on exposure field sizes and how to order your mask plates.

Resists Used (see PhotoLith. Recipes for full process info):

  • UV210-0.3 - Positive: 300nm nominal thickness
  • UV6-0.8 - Positive: 800nm nominal thickness
  • UV26-2.5 - Positive: 2.5um nominal thickness
  • UVN2300-0.5 - Negative: 500nm nominal thickness
  • AR2/DUV42P-6/DS-K101: Anti-Reflective Coatings
  • PMGI: Underlayer

AZ300MIF Developer for all processes

Process Information

Service Provider

Operating Procedures

Troubleshooting and Recovery