Difference between revisions of "ICP Etch 2 (Panasonic E640)"

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(Detailed Specifications: default chuck temp shown)
 
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= About =
 
= About =
   
This is a single-chamber tool for etching of a variety of materials. The chamber is configured as an ICP etching tool with 1000 W ICP power, 500 W RF substrate power, and RT - 80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching. This chamber has Cl<sub>2</sub>, BCl<sub>3</sub>, CF<sub>4</sub>, CHF<sub>3</sub>, SF<sub>6</sub>, Ar, N<sub>2</sub>, and O<sub>2 </sub>for gas sources and can be used to etch a variety of materials from SiO<sub>2</sub> to metals to compound semiconductors. The chamber evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, allowing for fast pump down.
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This is a single-chamber tool for etching of a variety of materials. The chamber is configured as an ICP etching tool with 1000 W ICP power, 500 W RF substrate power, and RT - 80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching. This chamber has Cl<sub>2</sub>, BCl<sub>3</sub>, CF<sub>4</sub>, CHF<sub>3</sub>, SF<sub>6</sub>, Ar, N<sub>2</sub>, and O<sub>2 </sub>for gas sources and can be used to etch a variety of materials from SiO<sub>2</sub> to metals to compound semiconductors. The chamber is evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, allowing for fast pump down. The system is also equipped with a red laser monitoring system from Intellemetrics for more precise etch stop control.
   
 
= Detailed Specifications =
 
= Detailed Specifications =
   
 
*1000 W ICP source, 500 W RF Sample Bias Source in etching chamber
 
*1000 W ICP source, 500 W RF Sample Bias Source in etching chamber
*RT - 80°C sample temperature for etching
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*Room Temp. – 80°C sample temperature for etching. Default 15°C Chuck temperature.
 
*Optimal Emission Monitoring
 
*Optimal Emission Monitoring
 
*Etch pressure from 0.1 Pa to 5 Pa (0.75 mT - 37.5 mT)
 
*Etch pressure from 0.1 Pa to 5 Pa (0.75 mT - 37.5 mT)
*Cl<sub>2</sub>, BCl<sub>3</sub>, CF<sub>4</sub>, CHF<sub>3</sub>, SF<sub>6</sub>, Ar, N<sub>2</sub>, and O<sub>2</sub> in etch chamber
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*Cl<sub>2</sub>, BCl<sub>3</sub>, (Ar or CHF<sub>3</sub>), (CF<sub>4</sub> or SF<sub>6</sub>), N<sub>2</sub>, and O<sub>2</sub> in etch chamber
*2000 W ICP ashing chamber
 
*RT - 250°C sample temperature for ashing
 
*Ashing pressures 50 mT - 500 mT
 
 
*O<sub>2</sub>, N<sub>2</sub>, CF<sub>4</sub>, H<sub>2</sub>O Vapor for ashing chamber
 
*O<sub>2</sub>, N<sub>2</sub>, CF<sub>4</sub>, H<sub>2</sub>O Vapor for ashing chamber
*Multiple 6” diameter wafer capable system
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*Single 6” diameter wafer capable system
 
*Pieces possible by mounting to 6” wafer
 
*Pieces possible by mounting to 6” wafer
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*670nm laser endpoint detector with camera and simulation software- Intellemetrics
   
 
=Documentation=
 
=Documentation=
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*{{file|Gas-Change.pdf|Gas Change Instructions}}
 
*{{file|Gas-Change.pdf|Gas Change Instructions}}
 
*{{file|manualwafertransfer.pdf|Manual Wafer Transfer Instructions}}
 
*{{file|manualwafertransfer.pdf|Manual Wafer Transfer Instructions}}
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  +
= Recipes =
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* [https://www.nanotech.ucsb.edu/wiki/index.php/Dry_Etching_Recipes Dry Etching Recipes]
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** Table of all dry etching recipes, showing which tools can etch which materials etc.
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* [https://www.nanotech.ucsb.edu/wiki/index.php/ICP_Etching_Recipes#ICP_Etch_2_.28Panasonic_E640.29 ICP2 Recipes]
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** Starting point recipes for ICP2 specifically.

Latest revision as of 08:25, 7 June 2018

ICP Etch 2 (Panasonic E640)
ICP1.jpg
Tool Type Dry Etch
Location Bay 2
Supervisor Mike Silva
Supervisor Phone (805) 893-3096
Supervisor E-Mail silva@ece.ucsb.edu
Description ?
Manufacturer Panasonic Factory Solutions
Dry Etch Recipes
Sign up for this tool


About

This is a single-chamber tool for etching of a variety of materials. The chamber is configured as an ICP etching tool with 1000 W ICP power, 500 W RF substrate power, and RT - 80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching. This chamber has Cl2, BCl3, CF4, CHF3, SF6, Ar, N2, and O2 for gas sources and can be used to etch a variety of materials from SiO2 to metals to compound semiconductors. The chamber is evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, allowing for fast pump down. The system is also equipped with a red laser monitoring system from Intellemetrics for more precise etch stop control.

Detailed Specifications

  • 1000 W ICP source, 500 W RF Sample Bias Source in etching chamber
  • Room Temp. – 80°C sample temperature for etching. Default 15°C Chuck temperature.
  • Optimal Emission Monitoring
  • Etch pressure from 0.1 Pa to 5 Pa (0.75 mT - 37.5 mT)
  • Cl2, BCl3, (Ar or CHF3), (CF4 or SF6), N2, and O2 in etch chamber
  • O2, N2, CF4, H2O Vapor for ashing chamber
  • Single 6” diameter wafer capable system
  • Pieces possible by mounting to 6” wafer
  • 670nm laser endpoint detector with camera and simulation software- Intellemetrics

Documentation

Recipes

  • Dry Etching Recipes
    • Table of all dry etching recipes, showing which tools can etch which materials etc.
  • ICP2 Recipes
    • Starting point recipes for ICP2 specifically.