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  • RIE Etching Recipes
    =[[RIE 2 (MRC)]] = ==CdZnTe Etching (RIE 2)==
    2 KB (253 words) - 10:02, 14 June 2021
  • Dry Etching Recipes
    ! colspan="3" |'''[[RIE Etching Recipes|RIE Etching]]''' | bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_2_.28MRC.29|RIE 2<br> <span style="font-size: 88%;">(MRC)</span>]]
    14 KB (1,875 words) - 15:31, 7 February 2024
  • RIE 5 (PlasmaTherm)
    |type = Dry Etch |description = RIE #5 Programmable, Loadlocked Chlorine-Based System
    3 KB (390 words) - 10:54, 28 November 2022
  • Bill Millerski
    * [[RIE 5 (PlasmaTherm)]] * [[XeF2 Etch (Xetch)]]
    848 bytes (89 words) - 08:28, 28 October 2021
  • Tool List
    *[[Oven 5 (Labline)]] *[[E-Beam 5 (Plasys)]]
    7 KB (844 words) - 11:52, 1 March 2024
  • Ashers (Technics PEII)
    |type = Dry Etch |location=Bay 5
    2 KB (347 words) - 13:06, 11 November 2022
  • Oxygen Plasma System Recipes
    *Etch Rate ≈ 50-100 nm/min. Varies. ~5-10min to strip ~0.5-1.0µm photoresist. Rotate wafer 180° halfway through etch. Optionally increase to 200W for faster etching.
    6 KB (887 words) - 13:55, 1 March 2024
  • ICP Etching Recipes
    ...exposed areas. To prevent a wafer from falling into the machine after the etch, you can [[Packaging Recipes#Wafer Bonder .28Logitech WBS7.29|mount to a ca ==High Rate Bosch Etch (DSEIII)==
    28 KB (4,350 words) - 17:09, 9 April 2024
  • Stepper Recipes
    ...s. &nbsp; Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Care should be taken with pos *0.5 um isolated lines
    17 KB (2,294 words) - 17:03, 21 March 2024
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