Difference between revisions of "Wet Etching Recipes"

From UCSB Nanofab Wiki
Jump to: navigation, search
(The Master Table of Wet Etching (Include All Materials))
(Compound Semiconductor Etching)
Line 1: Line 1:
 
=Compound Semiconductor Etching=
 
=Compound Semiconductor Etching=
[http://www.google.com/url?sa=t&rct=j&q=&esrc=s&source=web&cd=1&cad=rja&ved=0CC4QFjAA&url=http%3A%2F%2Fwww.nanofab.ubc.ca%2Ffiles%2Fclawson2001_iii-v_etching.pdf&ei=pIp6UobsOOTjiAKIw4G4Cw&usg=AFQjCNHo1MN8BZJmexnKIwpn92Rax6N5Lg&sig2=RK4rXPfIeJgcQEH5HkqWWw&bvm=bv.56146854,d.cGE Guide to references on III±V semiconductor chemical etching] Please add any confirmed etches from this reference to the Master Table of Wet Etching. Thanks,
+
[http://www.sciencedirect.com/science/article/pii/S0927796X00000279/pdfft?md5=5f73ef661ca68a37621d7d49adb4a607&pid=1-s2.0-S0927796X00000279-main.pdf Guide to references on III±V semiconductor chemical etching] Please add any confirmed etches from this reference to the Master Table of Wet Etching. Thanks,
   
 
=Metal Etching=
 
=Metal Etching=

Revision as of 12:02, 6 November 2013

Compound Semiconductor Etching

Guide to references on III±V semiconductor chemical etching Please add any confirmed etches from this reference to the Master Table of Wet Etching. Thanks,

Metal Etching

Silicon etching

Dielectric etching

Organic removal

Gold Plating

Chemi-Mechanical Polishing (CMP)

Example Wet Etching Table

How to use the Master Table of Wet Etching:

When entering a new etch into the table make a row for every etchant used in the solution such that the information can be sorted by etchant. For example, the InP etch HCl:H3PO4(1:3) and H3PO4:HCl(3:1). Likewise, if etch is known to be selective to multiple materials the etch should have a row for each material. For example HCl:H3PO4(1:3) is selective to both InGaAs and InGaAsP.

This multiple entry method may seem laborious for the person entering a new etch, however the power of sorting by selective materials and chemicals in a table with all materials is great.


Material Etchant Rate (nm/min) Anisotropy Selective to Selectivity Ref. Notes Confirmed by Extra column
InP HCl:H3PO4(1:3) ~1000 Highly InGaAs High Lamponi (p.102) Example Jon Doe Example
InP HCl:H3PO4(1:3) ~1000 Highly InGaAsP High Lamponi (p.102) Example Jon Doe Example
InP H3PO4:HCl(3:1) ~1000 Highly InGaAs High Lamponi (p.102) Example Jon Doe Example
InP H3PO4:HCl(3:1) ~1000 Highly InGaAsP High Lamponi (p.102) Example Jon Doe Example

The Master Table of Wet Etching (Include All Materials)

Material Etchant Rate (nm/min) Anisotropy Selective to Selectivity Ref. Notes Confirmed by Extra column
InP HCl:H3PO4(1:3) ~1000 Highly InGaAs High Lamponi (p.102) Example Jon Doe Example
InP HCl:H3PO4(1:3) ~1000 Highly InGaAsP High Lamponi (p.102) Example Jon Doe Example
InP H3PO4:HCl(3:1) ~1000 Highly InGaAs High Lamponi (p.102) Example Jon Doe Example
InP H3PO4:HCl(3:1) ~1000 Highly InGaAsP High Lamponi (p.102) Example Jon Doe Example
Al2O3 (ALD Plasma 300C) 300MIF ~1.6 High Measured in-house Rate slows with time, Selective to most non-Al Materials JTB Example
Al2O3 (ALD Plasma 300C) 400K ~2.2 High Measured in-house Rate slows with time, Selective to most non-Al Materials JTB Example
Al2O3 (ALD Plasma 300C) 400K(1:4) ~1.6 High Measured in-house Rate slows with time, Selective to most non-Al Materials JTB Example
Al2O3 (ALD Plasma 300C) NH4OH:H2O2:H2O (1:2:50) ~<0.5 High Measured in-house Rate slows with time JTB Example
Al2O3 (ALD Plasma 300C) H2O2:NH4OH:H2O (2:1:50) ~<0.5 High Measured in-house Rate slows with time JTB Example