Unaxis VLR Etch - Process Control Data

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Work In Progress

This article is still under construction. It may contain factual errors. Content is subject to change.

Data - InP Ridge Etch (Unaxis VLR)

PECVD SiO2 hardmask, patterned on Stepper #2 (AutoStep 200) & Panasonic ICP #1

InP Ridge Etch: °C, mT, W/W, Cl2=, H2=, CH4=sccm, time=1min30sec (90sec)

Sample Size: 1x1cm, ~30-40% SiO2 masking (NingC's pattern). Silicon carrier, no adhesive.

Date Sample# Etch Rate (nm/min) Etch Selectivity (InP/SiO2) Comments SEM Images
3/30/22 NP_Unaxis_02 1413 14.6 [1] [2]
3/9/22 NP_Unaxis_01 1297 15.3 [1] [2]