Difference between revisions of "Unaxis VLR Etch - Process Control Data"
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==Data - InP Ridge Etch (Unaxis VLR)== |
==Data - InP Ridge Etch (Unaxis VLR)== |
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[[PECVD1-(PlasmaTherm 790)|PECVD SiO2]] hardmask, patterned on [[Stepper 1 (GCA 6300)|Stepper #2 (AutoStep 200)]] & [[ICP Etch 1 (Panasonic E626I)|Panasonic ICP #1]] |
[[PECVD1-(PlasmaTherm 790)|PECVD SiO2]] hardmask, patterned on [[Stepper 1 (GCA 6300)|Stepper #2 (AutoStep 200)]] & [[ICP Etch 1 (Panasonic E626I)|Panasonic ICP #1]] |
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{| class="wikitable" |
{| class="wikitable" |
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+ | |- bgcolor="#fcfcfc" |
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| colspan="6" |'''InP Ridge Etch''': 200°C, 1.4mT, 800W/125W, Cl<sub>2</sub>=6.3, H<sub>2</sub>=12.7, Ar=2.0 sccm, time=1min30sec (90sec) |
| colspan="6" |'''InP Ridge Etch''': 200°C, 1.4mT, 800W/125W, Cl<sub>2</sub>=6.3, H<sub>2</sub>=12.7, Ar=2.0 sccm, time=1min30sec (90sec) |
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''Sample Size:'' 1x1cm epi-grade InP, ~30-40% SiO<sub>2</sub> masking (NingC's pattern). Silicon carrier, no adhesive. |
''Sample Size:'' 1x1cm epi-grade InP, ~30-40% SiO<sub>2</sub> masking (NingC's pattern). Silicon carrier, no adhesive. |
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''Conditioning:'' Prior to the etch, do O2 clean 15 minutes, then, chamber coating with the same recipe on 1/4-2" InP on Silicon carrier for 15 minutes. |
''Conditioning:'' Prior to the etch, do O2 clean 15 minutes, then, chamber coating with the same recipe on 1/4-2" InP on Silicon carrier for 15 minutes. |
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+ | |- bgcolor="#e4e7ed" |
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+ | |11/18/22 |
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+ | |ND_Unaxis_03 |
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+ | |800 |
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+ | |45.3 |
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+ | |Only slightly less PR etched led to extremely high selectivity. |
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+ | |[https://wiki.nanotech.ucsb.edu/w/images/d/dc/30D_unaxis_111822_002.jpg <nowiki>[30D]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/c/cd/CS_unaxis_111822_003.jpg <nowiki>[CS]</nowiki>] |
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+ | |11/11/22 |
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+ | |ND_Unaxis_02 |
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+ | |760 |
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+ | |24.5 |
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+ | | |
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+ | |[https://wiki.nanotech.ucsb.edu/w/images/7/73/30D_unaxis_111122_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/b/bf/CS_unaxis_111122_002.jpg <nowiki>[CS]</nowiki>] |
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+ | |- |
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+ | |9/30/22 |
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+ | |ND_Unaxis_01 |
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+ | |760 |
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+ | |22.1 |
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+ | |etch rate is correct, previous rates are |
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+ | |||
+ | taken in microns/min |
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+ | |[https://wiki.nanotech.ucsb.edu/w/images/7/78/30D_unaxis_09302022_002.jpg <nowiki>[30D]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/f/fe/CS_unaxis_093022_001.jpg <nowiki>[CS]</nowiki>] |
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+ | |- |
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+ | |4/28/22 |
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+ | |NP_Unaxis_03 |
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+ | |1.51 |
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+ | |22.2 |
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+ | |Normal profile - vertical and smooth. |
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+ | |[https://wiki.nanotech.ucsb.edu/w/images/a/ae/Unaxis_03_45D_003.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/a/a8/Unaxis_03_CS_003.jpg <nowiki>[2]</nowiki>] |
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|3/30/22 |
|3/30/22 |
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|NP_Unaxis_02 |
|NP_Unaxis_02 |
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+ | |1.41 |
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− | |1413 |
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|14.6 |
|14.6 |
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+ | |Strong undercut! |
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|[https://wiki.nanotech.ucsb.edu/w/images/8/84/Unaxis_02_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/6/60/Unaxis_02_CS_002.jpg <nowiki>[2]</nowiki>] |
|[https://wiki.nanotech.ucsb.edu/w/images/8/84/Unaxis_02_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/6/60/Unaxis_02_CS_002.jpg <nowiki>[2]</nowiki>] |
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|3/9/22 |
|3/9/22 |
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|NP_Unaxis_01 |
|NP_Unaxis_01 |
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+ | |1.30 |
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− | |1297 |
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|15.3 |
|15.3 |
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Latest revision as of 18:41, 21 November 2022
Data - InP Ridge Etch (Unaxis VLR)
PECVD SiO2 hardmask, patterned on Stepper #2 (AutoStep 200) & Panasonic ICP #1
InP Ridge Etch: 200°C, 1.4mT, 800W/125W, Cl2=6.3, H2=12.7, Ar=2.0 sccm, time=1min30sec (90sec)
Sample Size: 1x1cm epi-grade InP, ~30-40% SiO2 masking (NingC's pattern). Silicon carrier, no adhesive. Conditioning: Prior to the etch, do O2 clean 15 minutes, then, chamber coating with the same recipe on 1/4-2" InP on Silicon carrier for 15 minutes. | |||||
Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (InP/SiO2) | Comments | SEM Images |
11/18/22 | ND_Unaxis_03 | 800 | 45.3 | Only slightly less PR etched led to extremely high selectivity. | [30D][CS] |
11/11/22 | ND_Unaxis_02 | 760 | 24.5 | [30D] [CS] | |
9/30/22 | ND_Unaxis_01 | 760 | 22.1 | etch rate is correct, previous rates are
taken in microns/min |
[30D][CS] |
4/28/22 | NP_Unaxis_03 | 1.51 | 22.2 | Normal profile - vertical and smooth. | [1] [2] |
3/30/22 | NP_Unaxis_02 | 1.41 | 14.6 | Strong undercut! | [1] [2] |
3/9/22 | NP_Unaxis_01 | 1.30 | 15.3 | [1] [2] | |
11/8/2021 | InP#2102 | 1.24 | 13.8 | [1][2] | |
2/3/2021 | InP#2101 | 1.30 | 16 | [3][4] | |
8/30/2020 | InP#2001 | 1.11 | 10.4 | [5] | |
1/31/2019 | InP#1901 | 0.88 | 9.7 | [6][7] | |
12/10/2018 | InP#1809 | 1.01 | 11.4 | [8] | |
10/3/2018 | InP#1808 | 1.01 | 13.7 | [9] | |
8/7/2018 | InP#1807 | 0.81 | 8.0 | [10] | |
5/22/2018 | InP#1806 | 0.88 | 8.4 | [11] | |
4/26/2018 | InP#1805 | 1.29 | 13.6 | [12] | |
4/10/2018 | InP#1804 | 1.12 | 12.8 | [13] | |
4/5/2018 | InP#1803 | 1.05 | 11.9 | [14] | |
3/1/2018 | InP#1802 | 0.96 | 9 | [15] | |
1/2/2018 | InP#1801 | 1.44 | 14.3 | [16] | |
12/7/2017 | InP#1714 | 0.96 | 10.4 | [17] | |
11/21/2017 | InP#1713 | 1.04 | 12.1 | [18] | |
10/23/2017 | InP#1712 | 1.11 | 13.1 | [19] | |
10/11/2017 | InP#1711 | 1 | 11 | [20] | |
8/28/2017 | InP#1710 | 1 | 11.7 | [21] | |
8/16/2017 | InP#1709 | 0.76 | 8 | [22] | |
7/6/2017 | InP#1708 | 0.98 | 12.1 | [23] | |
5/19/2017 | InP#1707 | 0.82 | 9.9 | [24] | |
5/4/2017 | InP#1706 | 0.84 | 11 | [25] | |
4/20/2017 | inP#1705 | 0.88 | 10.2 | [26] | |
3/21/2017 | InP#1704 | 1.01 | 11.3 | [27] | |
2/21/2017 | InP#1703 | 0.91 | 11.3 | [28] | |
2/7/2017 | InP#1702 | 0.75 | 7.7 | [29] | |
1/23/2017 | InP#1701 | 0.93 | 9.4 | [30] | |
12/15/2016 | InP#1615 | 0.91 | 9.3 | [31] | |
12/1/2016 | InP#1614 | 0.96 | 12.1 | [32] | |
10/4/2016 | InP#1613 | 0.92 | 8.9 | [33] |