Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Florine etch of the underneath layer)"

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{| class="wikitable"
 
{| class="wikitable"
| colspan="5" |ICP#2:  0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec
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| colspan="5" |ICP#1:  0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec
 
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|Date
 
|Date
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|Averaged  Sidewall Angle (<sup>o</sup>)
 
|Averaged  Sidewall Angle (<sup>o</sup>)
 
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|-
|10/5/2018
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|1/28/19
|SiO2#01
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|I11902
|95.2
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|
|0.74
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|
|77.9
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|
 
|}
 
|}

Revision as of 09:55, 29 January 2019

ICP#1: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o)
1/28/19 I11902