Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4-ICP1"

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m (added selectivity to recent ICP1 cals)
m (made more recent cals on top of table for iCP1)
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|'''SEM Images'''
 
|'''SEM Images'''
 
|-
 
|-
|1/28/2019
+
|3/29/2022
|I11901
+
|NP_ICP1_03
|110
+
|136.9
|1.35
+
|1.19
|see SEM →
+
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/b/b1/I11901.pdf]
+
|[https://wiki.nanotech.ucsb.edu/w/images/a/ac/ICP1_03_45D_002.jpg <nowiki>[1]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/e/e8/ICP1_03_CS_005.jpg <nowiki>[2]</nowiki>]
 
|-
 
|-
|5/29/2019
+
|3/8/2022
|I11903
+
|NP_ICP1_02
|105
+
|133.7
|1.41
+
|1.12
 
|
 
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/c/c6/I11903.pdf]
+
|[https://wiki.nanotech.ucsb.edu/w/images/1/14/ICP1_02_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/a/a0/ICP1_02_CS_002.jpg <nowiki>[2]</nowiki>]
 
|-
 
|-
|1/13/2020
+
|3/2/2022
|I12001
+
|NP_ICP1_01
|78.0
+
|141.4
|1.06
+
|1.20
|unusual - two regions
+
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/b/bb/I1200107.pdf]
+
|[https://wiki.nanotech.ucsb.edu/w/images/4/44/ICP1_01_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/87/ICP1_01_CS_003.jpg <nowiki>[2]</nowiki>]
 
|-
 
|-
| colspan="6" |''Rate on 1/13/2020 is low by ~20%, so chamber was wet-cleaned on 1/21/2020. Data below for 1/23 shows rate returned to "normal".''
+
|1/7/2021
 +
|I12101
 +
|118
 +
|1.12
 +
|
 +
|[https://wiki.nanotech.ucsb.edu/w/images/4/49/I1210113.pdf]
 
|-
 
|-
|1/23/2020
+
|3/3/2020
|I12002
+
|I12004
|109
+
|110
|1.16
+
|1.05
 
|
 
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/d/d4/I1200211.pdf]
+
|[https://wiki.nanotech.ucsb.edu/w/images/b/b3/I1200415.pdf]
 +
|-
 +
| colspan="6" |''Sidewall profile on 2/28/2020 etches is slanted, chamber will be wet-cleaned on 3/2/2020 and re-tested. Data for 3/3 shows etch returned to "normal".''
 
|-
 
|-
 
|2/28/2020
 
|2/28/2020
Line 47: Line 54:
 
|[https://wiki.nanotech.ucsb.edu/wiki/images/e/ec/I1200301.pdf]
 
|[https://wiki.nanotech.ucsb.edu/wiki/images/e/ec/I1200301.pdf]
 
|-
 
|-
| colspan="6" |''Sidewall profile on 2/28/2020 etches is slanted, chamber will be wet-cleaned on 3/2/2020 and re-tested. Data below shows etch returned to "normal".''
+
|1/23/2020
|-
+
|I12002
|3/3/2020
+
|109
|I12004
+
|1.16
|110
 
|1.05
 
 
|
 
|
|[https://wiki.nanotech.ucsb.edu/w/images/b/b3/I1200415.pdf]
+
|[https://wiki.nanotech.ucsb.edu/wiki/images/d/d4/I1200211.pdf]
 
|-
 
|-
|1/7/2021
+
| colspan="6" |''Rate on 1/13/2020 is low by ~20%, so chamber was wet-cleaned on 1/21/2020. Data below for 1/23 shows rate returned to "normal".''
|I12101
 
|118
 
|1.12
 
|
 
|[https://wiki.nanotech.ucsb.edu/w/images/4/49/I1210113.pdf]
 
 
|-
 
|-
|3/2/2022
+
|1/13/2020
|NP_ICP1_01
+
|I12001
|141.4
+
|78.0
|1.20
+
|1.06
|
+
|unusual - two regions
|[https://wiki.nanotech.ucsb.edu/w/images/4/44/ICP1_01_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/87/ICP1_01_CS_003.jpg <nowiki>[2]</nowiki>]
+
|[https://wiki.nanotech.ucsb.edu/wiki/images/b/bb/I1200107.pdf]
 
|-
 
|-
|3/8/2022
+
|5/29/2019
|NP_ICP1_02
+
|I11903
|133.7
+
|105
|1.12
+
|1.41
 
|
 
|
|[https://wiki.nanotech.ucsb.edu/w/images/1/14/ICP1_02_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/a/a0/ICP1_02_CS_002.jpg <nowiki>[2]</nowiki>]
+
|[https://wiki.nanotech.ucsb.edu/wiki/images/c/c6/I11903.pdf]
 
|-
 
|-
|3/29/2022
+
|1/28/2019
|NP_ICP1_03
+
|I11901
|136.9
+
|110
|1.19
+
|1.35
|
+
|see SEM →
|[https://wiki.nanotech.ucsb.edu/w/images/a/ac/ICP1_03_45D_002.jpg <nowiki>[1]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/e/e8/ICP1_03_CS_005.jpg <nowiki>[2]</nowiki>]
+
|[https://wiki.nanotech.ucsb.edu/wiki/images/b/b1/I11901.pdf]
 
|}
 
|}
  

Revision as of 12:14, 13 April 2022

ICP#1 Recipe: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Images
3/29/2022 NP_ICP1_03 136.9 1.19 [1][2]
3/8/2022 NP_ICP1_02 133.7 1.12 [1] [2]
3/2/2022 NP_ICP1_01 141.4 1.20 [1] [2]
1/7/2021 I12101 118 1.12 [1]
3/3/2020 I12004 110 1.05 [2]
Sidewall profile on 2/28/2020 etches is slanted, chamber will be wet-cleaned on 3/2/2020 and re-tested. Data for 3/3 shows etch returned to "normal".
2/28/2020 I12003 119 1.17 56.6 [3]
1/23/2020 I12002 109 1.16 [4]
Rate on 1/13/2020 is low by ~20%, so chamber was wet-cleaned on 1/21/2020. Data below for 1/23 shows rate returned to "normal".
1/13/2020 I12001 78.0 1.06 unusual - two regions [5]
5/29/2019 I11903 105 1.41 [6]
1/28/2019 I11901 110 1.35 see SEM → [7]


OLD Etch Test Data

Alternate SiO2 etch recipe with O2 included.

ICP#1: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Images
1/28/2019 I11902 78.1 0.63 [8]
5/29/2019 I11904 71.1 0.58 [9]