Test Data of etching SiO2 with CHF3/CF4
Jump to navigation
Jump to search
The printable version is no longer supported and may have rendering errors. Please update your browser bookmarks and please use the default browser print function instead.
ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec | |||||
Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Comments | SEM Images; |
---|---|---|---|---|---|
1/11/23 | ND_Pan2_011123 | 142.9 | 1.11 | [30D][CS] | |
12/15/22 | ND_Pan2_121522 | 148 | 1.10 | [30D][CS] | |
12/09/22 | ND_Pan2_120922 | 138 | 1.12 | [30D][CS] | |
11/18/22 | ND_Pan2_111822 | 154 | 1.33 | [30D][CS] | |
11/07/22 | ND_Pan2_110722 | 155.7 | 1.18 | [30] [CS] | |
10/21/22 | ND_Pan2_102122 | 148.6 | 1.37 | [30D] [CS] | |
10/10/22 | ND_Pan2_101022 | 118.3 | 1.07 | [30D] [CS] | |
10/3/22 | ND_Pan2_100322 | 143.1 | 1.23 | [30D] [CS] | |
9/26/22 | ND_Pan2n_092622 | 131.4 | 1.40 | Samples from new wafer | [30D] [CS] |
9/26/22 | ND_Pan2o_092622 | 130.6 | 1.14 | Samples from old wafer | [45D] [CS] |
9/12/22 | ND_Pan2_091222 | 156 | 1.33 | Higher etch rate/selectivity, may be due to new Si wafer | [30D] [CS] |
8/26/22 | ND_Pan2_082622 | 144.3 | 1.22 | [30D] [CS] | |
8/8/2022 | ND_Pan2_080822 | 134.3 | 1.12 | [30D] [CS] | |
7/29/2022 | ND_Pan2_072922 | 142.3 | 1.20 | [30D] [CS] | |
7/15/2022 | ND_Pan2_071522 | 139.1 | 1.20 | [45D][CS] | |
5/5/2022 | NP_ICP2_07 | 170 | 1.11 | Right after Quartz Top-Plate Temperature reduced 100°C-->50°C.
Etch Characteristics look similar to before. |
[1] [2] |
4/26/2022 | NP_ICP2_06 | 176.3 | 1.14 | [1] [2] | |
4/20/2022 | NP_ICP2_05 | 171.7 | 1.13 | [1] [2] | |
4/12/2022 | NP_ICP2_04 | 167.9 | 1.17 | [1] [2] | |
3/30/2022 | NP_ICP2_03 | 164 | 1.23 | [1] [2] | |
3/8/2022 | NP_ICP2_02 | 144 | 1.02 | [1] [2] | |
3/2/2022 | NP_ICP2_01 | 169.6 | 1.29 | [1] [2] | |
8/9/2021 | I22105 | 140 | 0.97 | After etching diamond sample for 1 hour using Cl2/Ar. Found
chamber/etches are ok. |
[1] |
8/9/2021 | I22104 | 147 | 1.06 | Before etching diamond sample for 1 hour using Cl2/Ar | [2] |
7/21/2021 | I22103 | 134 | 1.09 | Investigating reports of low etch rate | [3] |
5/19/2021 | I22102 | 163 | 1.11 | Etch time=130 sec | [4] |
1/7/2021 | I22101 | 144 | 1.20 | [5] | |
8/9/2020 | I22002 | 102 | 0.86 | caused by air leaking to CHF3 channel | [6] |
1/16/2020 | I22001 | 149 | 1.21 | [7] | |
7/18/2019 | I21905 | 162 | 1.37 | [8] | |
3/6/2019 | I21904 | 151 | 1.23 | 85.6 | [9] |
1/28/2019 | I21901 | 146 | 1.23 | [10] | |
10/5/2018 | SiO2#02 | 160 | 1.2 | 82.1 | [11] |
Alternate Data (not updated)
We stopped taking data for the following table in 2019, use the above data instead.