This page is under construction - we are in the process of standardizing and collecting process control data for this tool. -- Demis 2022-02-11
Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec
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Date
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Sample#
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Etch Rate (nm/min)
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Etch Selectivity (SiO2/PR)
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Averaged Sidewall Angle (o)
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Notes/Observations
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SEM Images
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1/28/2021
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FE2102
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309
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0.99
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[1]
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Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=210 sec'
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Date
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Sample#
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Etch Rate (nm/min)
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Etch Selectivity (SiO2/PR)
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Averaged Sidewall Angle (o)
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Observations/Notes
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SEM Image
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11/5/2021
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SOFL01
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136
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1.2
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[2]
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02/09/22
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NP_SiO2_Fl_01
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Etched for 210s, all of PR was etched off
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[1]
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Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=90 sec
|
Date
|
Sample #
|
Etch Rate (nm/min)
|
Etch Selectivity (SiO2/PR)
|
Averaged Sidewalls Angle
|
Observations/Notes
|
SEM Images (45d, cross section)
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02/23/22
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NP_SiO2_Fl_02
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362.7
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[1] [2]
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03/02/22
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NP_SiO2_Fl_03
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~360 - 370
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[1] [2]
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3/09/22
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NP_SiO2_Fl_04
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358.9
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[1] [2]
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