Difference between revisions of "Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher"

From UCSB Nanofab Wiki
Jump to navigation Jump to search
m (new SEM on SiO2_Fl_03)
m (added entry to FL cals)
Line 12: Line 12:
 
|Observations/Notes
 
|Observations/Notes
 
|SEM Images (45d, cross section)
 
|SEM Images (45d, cross section)
 +
|-
 +
|4/20/22
 +
|NP_SiO2_Fl
 +
|354.7
 +
|
 +
|
 +
|
 +
|[https://wiki.nanotech.ucsb.edu/w/images/f/f5/SiO2_Fl_07_45D_003.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/3/34/SiO2_Fl_07_CS_004.jpg <nowiki>[2]</nowiki>]
 
|-
 
|-
 
|4/14/22
 
|4/14/22

Revision as of 11:09, 21 April 2022

  This page is under construction - we are in the process of standardizing and collecting process control data for this tool.  -- Demis 2022-02-11


Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=90 sec
Date Sample # Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewalls Angle Observations/Notes SEM Images (45d, cross section)
4/20/22 NP_SiO2_Fl 354.7 [1] [2]
4/14/22 NP_SiO2_Fl_06 352.7 *need to measure PR [1] [2]
3/29/2022 NP_SiO2_Fl_05 334.7 1.07 [1][2]
3/09/22 NP_SiO2_Fl_04 358.9 1.06 [1] [2]
3/02/22 NP_SiO2_Fl_03 347 1.05 [1] [2]
2/23/22 NP_SiO2_Fl_02 362.7 1.02 [1] [2]


Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=210 sec'
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) Observations/Notes SEM Image
11/5/2021 SOFL01 136 1.2 [1]
02/09/22 NP_SiO2_Fl_01 Etched for 210s, all of PR was etched off [1]


Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) Notes/Observations SEM Images
1/28/2021 FE2102 309 0.99 [2]