Difference between revisions of "Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher"
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|Observations/Notes |
|Observations/Notes |
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|SEM Images (45d, cross section) |
|SEM Images (45d, cross section) |
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+ | |- |
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+ | |11/18/22 |
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+ | |ND_FL_111822 |
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+ | |268 |
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+ | |1.01 |
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+ | | |
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+ | | |
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+ | |[https://wiki.nanotech.ucsb.edu/w/images/6/64/30D_FICP_111822_002.jpg <nowiki>[30D]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/c/c5/CS_FICP_111822_002.jpg <nowiki>[CS]</nowiki>] |
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+ | |- |
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+ | |11/07/22 |
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+ | |ND_FL_110722 |
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+ | |264.7 |
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+ | |0.96 |
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+ | | |
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+ | | |
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+ | |[https://wiki.nanotech.ucsb.edu/w/images/c/c8/30D_FICP_110722_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/e/e9/CS_FICP_110722_002.jpg <nowiki>[CS]</nowiki>] |
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+ | |- |
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+ | |10/24/22 |
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+ | |ND_FL_102422 |
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+ | |266.7 |
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+ | |1.22 |
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+ | | |
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+ | | |
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+ | |[https://wiki.nanotech.ucsb.edu/w/images/3/38/30D_FICP_102422_002.jpg <nowiki>[30D]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/7/74/CS_FICP_102422_002.jpg <nowiki>[CS]</nowiki>] |
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+ | |- |
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+ | |10/14/22 |
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+ | |ND_FL_101422 |
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+ | |249 |
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+ | |0.82 |
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+ | | |
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+ | |Image drifted very slightly |
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+ | in SEM. May account for |
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+ | |||
+ | low selectivity. |
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+ | |[https://wiki.nanotech.ucsb.edu/w/images/7/76/30D_FICP_101422_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/c/ca/CS_FICP_101422_003.jpg <nowiki>[CS]</nowiki>] |
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+ | |- |
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+ | |10/3/22 |
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+ | |ND_FL_100322 |
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+ | |228 |
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+ | |1.10 |
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+ | | |
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+ | |Low etch rate. |
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+ | |[https://wiki.nanotech.ucsb.edu/w/images/8/8e/30D_10302022_FICP_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/9/92/CS_10302022_FICP_002.jpg <nowiki>[CS]</nowiki>] |
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|9/12/22 |
|9/12/22 |
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|ND_FL_091222 |
|ND_FL_091222 |
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|278 |
|278 |
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− | |1. |
+ | |1.33 |
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| |
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− | |high selectivity |
+ | |high selectivity, may be |
+ | due to new Si wafer |
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|[https://wiki.nanotech.ucsb.edu/w/images/8/8e/30D_FICP_091222_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/e/e7/CS_FICP_091222_002.jpg <nowiki>[CS]</nowiki>] |
|[https://wiki.nanotech.ucsb.edu/w/images/8/8e/30D_FICP_091222_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/e/e7/CS_FICP_091222_002.jpg <nowiki>[CS]</nowiki>] |
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Revision as of 18:18, 21 November 2022
This page is under construction - we are in the process of standardizing and collecting process control data for this tool. -- Demis 2022-02-11
Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=90 sec | ||||||
Date | Sample # | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewalls Angle | Observations/Notes | SEM Images (45d, cross section) |
11/18/22 | ND_FL_111822 | 268 | 1.01 | [30D][CS] | ||
11/07/22 | ND_FL_110722 | 264.7 | 0.96 | [30D] [CS] | ||
10/24/22 | ND_FL_102422 | 266.7 | 1.22 | [30D][CS] | ||
10/14/22 | ND_FL_101422 | 249 | 0.82 | Image drifted very slightly
in SEM. May account for low selectivity. |
[30D] [CS] | |
10/3/22 | ND_FL_100322 | 228 | 1.10 | Low etch rate. | [30D] [CS] | |
9/12/22 | ND_FL_091222 | 278 | 1.33 | high selectivity, may be
due to new Si wafer |
[30D] [CS] | |
8/26/22 | ND_FL_082622 | 288 | 0.97 | Low selectivity/e. rate | [30D] [CS] | |
8/22/22 | ND_FL_082222 | 252.7 | 0.93 | Lower selectivity/e. rate | [40D] [CS] | |
8/19/22 | ND_Fl_081922 | 260.7 | 0.99 | Low selectivity/etch rate | [30D][CS] | |
5/18/22 | NP_SiO2_Fl_10 | 308.7 | 1.19 | still lower etch rate | [1] [2] | |
5/10/22 | NP_SiO2_Fl_09 | 307.3 | 1.15 | *etch rate seems lower* | [1] [2] | |
4/26/22 | NP_SiO2_Fl_08 | 344.7 | 1.4 | [1] [2] | ||
4/20/22 | NP_SiO2_Fl_07 | 354.7 | 1.11 | [1] [2] | ||
4/14/22 | NP_SiO2_Fl_06 | 352.7 | 1.11 | [1] [2] | ||
3/29/22 | NP_SiO2_Fl_05 | 334.7 | 1.07 | [1][2] | ||
3/09/22 | NP_SiO2_Fl_04 | 358.9 | 1.06 | [1] [2] | ||
3/02/22 | NP_SiO2_Fl_03 | 347 | 1.05 | [1] [2] | ||
2/23/22 | NP_SiO2_Fl_02 | 362.7 | 1.02 | [1] [2] |
Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=210 sec' | ||||||
Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) | Observations/Notes | SEM Image |
11/5/2021 | SOFL01 | 136 | 1.2 | [1] | ||
02/09/22 | NP_SiO2_Fl_01 | Etched for 210s, all of PR was etched off | [1] |
Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec | ||||||
Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) | Notes/Observations | SEM Images |
1/28/2021 | FE2102 | 309 | 0.99 | [2] |