Difference between revisions of "Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher"

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m (added entry to FL cals)
m (addded entry to fl cals, added selectivity. etch rate is 10% lower)
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|Observations/Notes
 
|Observations/Notes
 
|SEM Images (45d, cross section)
 
|SEM Images (45d, cross section)
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|5/10/22
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|NP_SiO2_Fl_09
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|307.3
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|1.15
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|*etch rate seems lower*
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|[https://wiki.nanotech.ucsb.edu/w/images/a/a8/SiO2_Fl_09_45D_005.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/a/a7/SiO2_Fl_09_CS_006.jpg <nowiki>[2]</nowiki>]
 
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|4/26/22
 
|4/26/22
 
|NP_SiO2_Fl_08
 
|NP_SiO2_Fl_08
 
|344.7
 
|344.7
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|1.4
 
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|NP_SiO2_Fl_07
 
|NP_SiO2_Fl_07
 
|354.7
 
|354.7
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|1.11
 
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|NP_SiO2_Fl_06
 
|NP_SiO2_Fl_06
 
|352.7
 
|352.7
|*need to measure PR
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|1.11
 
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Revision as of 09:33, 11 May 2022

  This page is under construction - we are in the process of standardizing and collecting process control data for this tool.  -- Demis 2022-02-11


Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=90 sec
Date Sample # Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewalls Angle Observations/Notes SEM Images (45d, cross section)
5/10/22 NP_SiO2_Fl_09 307.3 1.15 *etch rate seems lower* [1] [2]
4/26/22 NP_SiO2_Fl_08 344.7 1.4 [1] [2]
4/20/22 NP_SiO2_Fl_07 354.7 1.11 [1] [2]
4/14/22 NP_SiO2_Fl_06 352.7 1.11 [1] [2]
3/29/22 NP_SiO2_Fl_05 334.7 1.07 [1][2]
3/09/22 NP_SiO2_Fl_04 358.9 1.06 [1] [2]
3/02/22 NP_SiO2_Fl_03 347 1.05 [1] [2]
2/23/22 NP_SiO2_Fl_02 362.7 1.02 [1] [2]


Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=210 sec'
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) Observations/Notes SEM Image
11/5/2021 SOFL01 136 1.2 [1]
02/09/22 NP_SiO2_Fl_01 Etched for 210s, all of PR was etched off [1]


Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) Notes/Observations SEM Images
1/28/2021 FE2102 309 0.99 [2]