Difference between revisions of "Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher"

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|SEM Images (45d, cross section)
 
|SEM Images (45d, cross section)
 
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|-
|10/3/22
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|11/18/22
|ND_FL_100322
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|ND_FL_111822
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|268
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|1.01
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|
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|
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|[https://wiki.nanotech.ucsb.edu/w/images/6/64/30D_FICP_111822_002.jpg <nowiki>[30D]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/c/c5/CS_FICP_111822_002.jpg <nowiki>[CS]</nowiki>]
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|-
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|11/07/22
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|ND_FL_110722
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|264.7
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|0.96
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|
 +
|
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|[https://wiki.nanotech.ucsb.edu/w/images/c/c8/30D_FICP_110722_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/e/e9/CS_FICP_110722_002.jpg <nowiki>[CS]</nowiki>]
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|-
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|10/24/22
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|ND_FL_102422
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|266.7
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|1.22
 
|
 
|
 
|
 
|
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|[https://wiki.nanotech.ucsb.edu/w/images/3/38/30D_FICP_102422_002.jpg <nowiki>[30D]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/7/74/CS_FICP_102422_002.jpg <nowiki>[CS]</nowiki>]
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|-
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|10/14/22
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|ND_FL_101422
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|249
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|0.82
 
|
 
|
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|Image drifted very slightly
 +
in SEM. May account for
 +
 +
low selectivity.
 +
|[https://wiki.nanotech.ucsb.edu/w/images/7/76/30D_FICP_101422_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/c/ca/CS_FICP_101422_003.jpg <nowiki>[CS]</nowiki>]
 +
|-
 +
|10/3/22
 +
|ND_FL_100322
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|228
 +
|1.10
 
|
 
|
 +
|Low etch rate.
 
|[https://wiki.nanotech.ucsb.edu/w/images/8/8e/30D_10302022_FICP_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/9/92/CS_10302022_FICP_002.jpg <nowiki>[CS]</nowiki>]
 
|[https://wiki.nanotech.ucsb.edu/w/images/8/8e/30D_10302022_FICP_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/9/92/CS_10302022_FICP_002.jpg <nowiki>[CS]</nowiki>]
 
|-
 
|-

Latest revision as of 17:18, 21 November 2022

  This page is under construction - we are in the process of standardizing and collecting process control data for this tool.  -- Demis 2022-02-11


Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=90 sec
Date Sample # Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewalls Angle Observations/Notes SEM Images (45d, cross section)
11/18/22 ND_FL_111822 268 1.01 [30D][CS]
11/07/22 ND_FL_110722 264.7 0.96 [30D] [CS]
10/24/22 ND_FL_102422 266.7 1.22 [30D][CS]
10/14/22 ND_FL_101422 249 0.82 Image drifted very slightly

in SEM. May account for

low selectivity.

[30D] [CS]
10/3/22 ND_FL_100322 228 1.10 Low etch rate. [30D] [CS]
9/12/22 ND_FL_091222 278 1.33 high selectivity, may be

due to new Si wafer

[30D] [CS]
8/26/22 ND_FL_082622 288 0.97 Low selectivity/e. rate [30D] [CS]
8/22/22 ND_FL_082222 252.7 0.93 Lower selectivity/e. rate [40D] [CS]
8/19/22 ND_Fl_081922 260.7 0.99 Low selectivity/etch rate [30D][CS]
5/18/22 NP_SiO2_Fl_10 308.7 1.19 still lower etch rate [1] [2]
5/10/22 NP_SiO2_Fl_09 307.3 1.15 *etch rate seems lower* [1] [2]
4/26/22 NP_SiO2_Fl_08 344.7 1.4 [1] [2]
4/20/22 NP_SiO2_Fl_07 354.7 1.11 [1] [2]
4/14/22 NP_SiO2_Fl_06 352.7 1.11 [1] [2]
3/29/22 NP_SiO2_Fl_05 334.7 1.07 [1][2]
3/09/22 NP_SiO2_Fl_04 358.9 1.06 [1] [2]
3/02/22 NP_SiO2_Fl_03 347 1.05 [1] [2]
2/23/22 NP_SiO2_Fl_02 362.7 1.02 [1] [2]


Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=210 sec'
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) Observations/Notes SEM Image
11/5/2021 SOFL01 136 1.2 [1]
02/09/22 NP_SiO2_Fl_01 Etched for 210s, all of PR was etched off [1]


Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) Notes/Observations SEM Images
1/28/2021 FE2102 309 0.99 [2]