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  • ICP Etch 2 (Panasonic E640)
    #REDIRECT [[ICP Etch 2 (Panasonic E626I)]]
    42 bytes (6 words) - 15:19, 7 February 2024
  • File:Intellemetrics LEP500 Photo.jpg
    Photo of Intellemetrics LEP 500 laser etch monitor on Panasonic ICP #2
    (1,536 × 3,728 (1.01 MB)) - 18:57, 15 May 2019
  • Test Data of etching SiO2 with CHF3/CF4/O2
    | colspan="5" |ICP#2: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec |Etch Rate (nm/min)
    293 bytes (39 words) - 16:17, 8 October 2018
  • Tony Bosch
    *[[ICP-PECVD (Unaxis VLR)]] *[[ICP-Etch (Unaxis VLR)]]
    851 bytes (98 words) - 09:53, 28 October 2021
  • File:Panasonic2.pdf
    {{file|ICP-Etch-2-Operating-Manual.pdf|Operating Instruction Manual}}
    (184 KB) - 09:18, 13 March 2014
  • ICP-Etch (Unaxis VLR)
    |type = Dry Etch ...ching of high Indium containing compound semiconductors such as InP, where etch product volatility is an issue. High aspect ratio, smooth vertical wall, In
    2 KB (313 words) - 16:31, 29 September 2022
  • Dry Etching Recipes
    ! colspan="6" |'''[[ICP Etching Recipes|ICP Etching]]''' | bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_2_.28MRC.29|RIE 2<br> <span style="font-size: 88%;">(MRC)</span>]]
    14 KB (1,875 words) - 15:31, 7 February 2024
  • ICP Etch 2 (Panasonic E626I)
    |type = Dry Etch |location=Bay 2
    3 KB (452 words) - 15:19, 7 February 2024
  • Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Fluorine etch of the underneath layer)
    | colspan="5" |ICP#2: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec |Etch Rate (nm/min)
    707 bytes (100 words) - 18:26, 6 April 2020
  • Process Group - Process Control Data
    ...d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 PECVD#1: SiO<sub>2</sub>] ==[[PECVD Recipes#PECVD 2 .28Advanced Vacuum.29|PECVD #2 (Advanced Vacuum)]]==
    10 KB (1,497 words) - 12:03, 24 April 2024
  • Template:Rl/doc
    This template (rl = Recipe Link) takes 2 arguments. ...o the section "''Al Etch (Panasonic 1)''" on the ''[[ICP_Etching_Recipes | ICP Etching Recipes]]'' page, you would write the template like so:
    942 bytes (166 words) - 13:15, 8 January 2018
  • Oxford Etcher - Sample Size Effect on Etch Rate
    ==Sample Size Effect on Etch Rate (Oxford ICP Etcher)== ...affect the etch profile - ie. '''etches are still smooth and vertical, but etch rate varies with sample area.'''
    2 KB (256 words) - 16:05, 20 March 2023
  • ICP Etch 1 (Panasonic E646V)
    |type = Dry Etch |location=Bay 2
    4 KB (697 words) - 15:18, 7 February 2024
  • Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher
    | colspan="7" |Fluorine ICP: 3.8mT, 50/'''900W''', CHF3/CF4=10/30sccm, time='''90 sec''' |Etch Rate (nm/min)
    5 KB (758 words) - 15:03, 9 January 2023
  • ICP-PECVD (Unaxis VLR)
    |description = High Density ICP PECVD ...ide is characterized. Processes are available for Gap-filling with SiO<sub>2</sub>.
    3 KB (454 words) - 10:35, 23 May 2023
  • Test Data of etching SiO2 with CHF3/CF4-ICP1
    |+'''ICP#1 Recipe:''' |'''Etch Rate (nm/min)'''
    7 KB (936 words) - 09:54, 12 January 2023
  • NanoFab Process Group
    ...Indium Phosphide Etch Verification procedure|Unaxis PM1: Indium Phosphide Etch Verification Procedure]] *[[ProcessGroup: ICP|ICP#1/2: SiO2 Etch Verification Procedure]]
    2 KB (297 words) - 16:46, 11 September 2023
  • Lee Sawyer
    * [[ICP Etch 1 (Panasonic E626I)]] * [[RIE 2 (MRC)]]
    716 bytes (86 words) - 09:59, 28 October 2021
  • Oxford ICP Etcher (PlasmaPro 100 Cobra)
    |type = Dry Etch |location=Bay 2
    4 KB (532 words) - 23:33, 4 May 2023
  • Unaxis VLR Etch - Process Control Data
    ==Data - InP Ridge Etch (Unaxis VLR)== ...00)|Stepper #2 (AutoStep 200)]] & [[ICP Etch 1 (Panasonic E626I)|Panasonic ICP #1]]
    5 KB (717 words) - 18:41, 21 November 2022

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