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- |type = Dry Etch |location=Bay 23 KB (452 words) - 15:19, 7 February 2024
- #REDIRECT [[ICP Etch 2 (Panasonic E626I)]]42 bytes (6 words) - 15:19, 7 February 2024
Page text matches
- #REDIRECT [[ICP Etch 2 (Panasonic E626I)]]42 bytes (6 words) - 15:19, 7 February 2024
- | colspan="5" |ICP#2: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec |Etch Rate (nm/min)293 bytes (39 words) - 16:17, 8 October 2018
- *[[ICP-PECVD (Unaxis VLR)]] *[[ICP-Etch (Unaxis VLR)]]851 bytes (98 words) - 09:53, 28 October 2021
- |type = Dry Etch ...ching of high Indium containing compound semiconductors such as InP, where etch product volatility is an issue. High aspect ratio, smooth vertical wall, In2 KB (313 words) - 16:31, 29 September 2022
- ! colspan="6" |'''[[ICP Etching Recipes|ICP Etching]]''' | bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_2_.28MRC.29|RIE 2<br> <span style="font-size: 88%;">(MRC)</span>]]14 KB (1,875 words) - 15:31, 7 February 2024
- |type = Dry Etch |location=Bay 23 KB (452 words) - 15:19, 7 February 2024
- | colspan="5" |ICP#2: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec |Etch Rate (nm/min)707 bytes (100 words) - 18:26, 6 April 2020
- ...d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 PECVD#1: SiO<sub>2</sub>] ==[[PECVD Recipes#PECVD 2 .28Advanced Vacuum.29|PECVD #2 (Advanced Vacuum)]]==10 KB (1,497 words) - 12:03, 24 April 2024
- ==Sample Size Effect on Etch Rate (Oxford ICP Etcher)== ...affect the etch profile - ie. '''etches are still smooth and vertical, but etch rate varies with sample area.'''2 KB (256 words) - 16:05, 20 March 2023
- |type = Dry Etch |location=Bay 24 KB (697 words) - 15:18, 7 February 2024
- | colspan="7" |Fluorine ICP: 3.8mT, 50/'''900W''', CHF3/CF4=10/30sccm, time='''90 sec''' |Etch Rate (nm/min)5 KB (758 words) - 15:03, 9 January 2023
- |description = High Density ICP PECVD ...ide is characterized. Processes are available for Gap-filling with SiO<sub>2</sub>.3 KB (454 words) - 10:35, 23 May 2023
- |+'''ICP#1 Recipe:''' |'''Etch Rate (nm/min)'''7 KB (936 words) - 09:54, 12 January 2023
- ...Indium Phosphide Etch Verification procedure|Unaxis PM1: Indium Phosphide Etch Verification Procedure]] *[[ProcessGroup: ICP|ICP#1/2: SiO2 Etch Verification Procedure]]2 KB (297 words) - 16:46, 11 September 2023
- * [[ICP Etch 1 (Panasonic E626I)]] * [[RIE 2 (MRC)]]716 bytes (86 words) - 09:59, 28 October 2021
- |type = Dry Etch |location=Bay 24 KB (532 words) - 23:33, 4 May 2023
- ==Data - InP Ridge Etch (Unaxis VLR)== ...00)|Stepper #2 (AutoStep 200)]] & [[ICP Etch 1 (Panasonic E626I)|Panasonic ICP #1]]5 KB (717 words) - 18:41, 21 November 2022
- ==Process Control Data - InP Ridge Etch (Oxford ICP Etcher)== ...00)|Stepper #2 (AutoStep 200)]] & [[ICP Etch 1 (Panasonic E626I)|Panasonic ICP #1]]8 KB (1,214 words) - 15:38, 12 January 2023
- ...cedure for performing an etch with laser monitor endpoint on the Panasonic ICP etchers.'' ## The locations on ICP#1 and ICP#2 are different.6 KB (876 words) - 14:23, 13 June 2019
- |type = Dry Etch |location=Bay 24 KB (603 words) - 13:09, 22 November 2023