Difference between revisions of "Rapid Thermal Processor (AET RX6)"

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{{tool|{{PAGENAME}}
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{{tool2|{{PAGENAME}}
 
|picture=RTP.jpg
 
|picture=RTP.jpg
 
|type = Vacuum Deposition
 
|type = Vacuum Deposition
|super= Brian Lingg
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|super= Bill Millerski
 +
|super2= Tony Bosch
 
|phone=(805)839-3918x210
 
|phone=(805)839-3918x210
 
|location=Bay 3
 
|location=Bay 3
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|manufacturer = Plasma-Therm
 
|manufacturer = Plasma-Therm
 
|materials =  
 
|materials =  
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|toolid=42
 
}}
 
}}
= About =
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=About=
Our rapid thermal annealer is manufactured by AET. Heating is achieved through two banks of heat lamps that deliver optical energy through the all-quartz chamber. With this unit, near atmospheric pressure anneals in Nitrogen, Forming Gas (10%H<sub>2</sub> / 90%N<sub>2</sub>), or Dry Air (~ 10%O<sub>2</sub> / ~ 90%N<sub>2</sub>) can be done to temperatures up to 1200°C for three minutes. An inner liner is used to prevent contamination to the main quartz chamber. A thermocouple and pyrometer are available for maintaining temperature control. The system can hold one 4-inch wafer or smaller substrates placed on top of a Silicon carrier wafer. Custom windows based control software has been added to the system by Sedona Visual Controls. All process parameters are monitored and stored. Typical anneals are done for: ohmic contact formation to semiconductors, implant activation, damage annealing, dopant activation, and film densification. A variety of materials can be annealed in the chamber, including Si, SiO<sub>2</sub>, Si<sub>3</sub>N<sub>4</sub>, GaAs, InP, GaSb, GaN, and metals. For materials that will decompose at the elevated temperatures, a dielectric anneal cap must be deposited on the wafer or an enclosed wafer holder must be used to prevent contamination of the chamber walls.  
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Our rapid thermal annealer is manufactured by AET. Heating is achieved through two banks of heat lamps that deliver optical energy through the all-quartz chamber. With this unit, atmospheric pressure anneals in Oxygen, Nitrogen and Forming Gas can be done to temperatures up to 1200°C for three minutes. An inner liner is used to prevent contamination to the main quartz chamber. A thermocouple and pyrometer are available for maintaining temperature control. The system can hold one 4-inch wafer or smaller substrates placed on top of a Silicon carrier wafer. Custom windows based control software has been added to the system by Sedona Visual Controls. All process parameters are monitored and stored. Typical anneals are done for: ohmic contact formation to semiconductors, implant activation, damage annealing, dopant activation, and film densification. A variety of materials can be annealed in the chamber, including Si, SiO<sub>2</sub>, Si<sub>3</sub>N<sub>4</sub>, GaAs, InP, GaSb, GaN, and metals. For materials that will decompose at the elevated temperatures, a dielectric anneal cap must be deposited on the wafer or an enclosed wafer holder must be used to prevent contamination of the chamber walls.
  
= Detailed Specifications =
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=Detailed Specifications=
  
*Temperatures of 1000°C for 20 min., 1100°C for 5 min., 1200°C for 1 min. Nitrogen, Forming Gas, Dry Air at flows up to 10000 lpm TC use for anneals up to 1000°C Pyrometer for temperatures above 400°C
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*Max. Temperatures of 1000°C for 20 min., 1100°C for 5 min., 1200°C for 3 min.
 +
*Maximum ramp rate of 50°C/Sec.
 +
*Oxygen, Nitrogen and Forming Gas flows up to 10LPM.
 +
*TC use for anneals up to 1200°C
 
*Windows-based process monitoring and control software by Sedona Visual Controls
 
*Windows-based process monitoring and control software by Sedona Visual Controls
  
 
=Max temp/Time=
 
=Max temp/Time=
  
{| border="1" class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
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{| class="wikitable" border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
 
|-
 
|-
|width="100"|Temperature||width="75"|Time
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| width="100" |Temperature|| width="75" |Time
 
|-
 
|-
|1000°C || 1 Hour
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|1000°C||1 Hour
 
|-
 
|-
|1100°C||10 min  
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|1100°C||10 min
 
|-
 
|-
|1200°C ||3 min  
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|1200°C||3 min
 
|-
 
|-
|1300°C|| 10 sec
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|1300°C||10 sec
 
|-
 
|-
 
|}
 
|}
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=Documentation=
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 +
*[//wiki.nanotech.ucsb.edu/wiki/images/b/bb/AET_RTA_Operating_Instructions.pdf Operating Instuctions]

Latest revision as of 10:10, 30 August 2022

Rapid Thermal Processor (AET RX6)
RTP.jpg
Location Bay 3
Tool Type Vacuum Deposition
Manufacturer Plasma-Therm
Description PECVD Plasma Therm 790 For Oxides And Nitrides

Primary Supervisor Bill Millerski
(805) 893-2655
wmillerski@ucsb.edu

Secondary Supervisor

Tony Bosch


Recipes Vacuum Deposition RecipesN/A

SignupMonkey: Sign up for this tool


About

Our rapid thermal annealer is manufactured by AET. Heating is achieved through two banks of heat lamps that deliver optical energy through the all-quartz chamber. With this unit, atmospheric pressure anneals in Oxygen, Nitrogen and Forming Gas can be done to temperatures up to 1200°C for three minutes. An inner liner is used to prevent contamination to the main quartz chamber. A thermocouple and pyrometer are available for maintaining temperature control. The system can hold one 4-inch wafer or smaller substrates placed on top of a Silicon carrier wafer. Custom windows based control software has been added to the system by Sedona Visual Controls. All process parameters are monitored and stored. Typical anneals are done for: ohmic contact formation to semiconductors, implant activation, damage annealing, dopant activation, and film densification. A variety of materials can be annealed in the chamber, including Si, SiO2, Si3N4, GaAs, InP, GaSb, GaN, and metals. For materials that will decompose at the elevated temperatures, a dielectric anneal cap must be deposited on the wafer or an enclosed wafer holder must be used to prevent contamination of the chamber walls.

Detailed Specifications

  • Max. Temperatures of 1000°C for 20 min., 1100°C for 5 min., 1200°C for 3 min.
  • Maximum ramp rate of 50°C/Sec.
  • Oxygen, Nitrogen and Forming Gas flows up to 10LPM.
  • TC use for anneals up to 1200°C
  • Windows-based process monitoring and control software by Sedona Visual Controls

Max temp/Time

Temperature Time
1000°C 1 Hour
1100°C 10 min
1200°C 3 min
1300°C 10 sec

Documentation