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Internal Users - Journal Publications

Authors Title Publications
J. Duan, H. Huang, B. Dong, D. Jung, J.C. Norman, J.E. Bowers, F. Grillot 1.3-um Reflection Insensitive InAs/GaAs Quantum Dot Lasers Directly Grown on Silicon Submitted to Photonics Technology Letters (2018).
J.S.  Lee, S. Choi, M. Pendharkar, D.J. Pennachio, B. Markman, M. Seas, S. Koelling, M.A. Verheijen,L. Casparis, K.D. Petersson, I. Petkovic, V. Schaller, M.J.W. Rodwell, C.M. Marcus, P.Krogstrup, L.P. Kouwenhoven, E.P.A.M. Bakkers, C.J. Palmstrøm 1Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001),InP(111)B, and InP(110) surfaces arXiv preprint arXiv:1808.04563
S. Liu, D. Jung, J. C. Norman, MJ Kennedy, A. C. Gossard, J. E. Bowers 490 fs pulse generation from passively mode-locked single section quantum dot laser directly grown on on-axis GaP/Si Electronics Letters, (54)7, 432-433, March 19, 2018.
C. Neill, P. Roushan, K. Kechedzhi, S. Boixo, S. V. Isakov, V. Smelyanskiy, R. Barends, B. Burkett, Y. Chen, Z. Chen, B. Chiaro, A. Dunsworth, A. Fowler, B. Foxen, R.Graff, E. Jeffrey, J. Kelly, E. Lucero, A. Megrant, J. Mutus, M. Neeley, C. Quintana, D. Sank, A. Vainsencher, J. Wenner, T. C. White, H. Neven, J. M. Martinis A blueprint for demonstrating quantum supremacy with superconducting qubits Science 360, Issue 6385, 195-199 (2018).   arXiv:1709.06678
M. Garcia, B. Ganapathysubramanian, S. Pennathur A linearised model for calculating inertial forces on a particle in the presence of a permeate flow Journal of Fluid Mechanics. 2019 Feb;861:253-74.  
H. Kim, L. Theogarajan, S. Pennathur A repeatable and scalable fabrication method for sharp, hollow silicon microneedles Journal of Micromechanics and Microengineering, Vol. 28, No. 3, January 2018.
K.H. Chou, C. McCallum, D. Gillespie, S. Pennathur An experimental approach to systematically probe charge inversion in nanofluidic channels Nano letters. 2018 Jan 11;18(2):1191-5.  
D. T. Spencer, T. Drake, T. C. Briles, J. Stone, L. C. Sinclair, C. Fredrick, Q. Li, D. Westly, B. Robert Ilic, A. Bluestone, N. Volet, T. Komljenovic, L. Chang, S. H. Lee, D. Y. Oh, M.-G. Suh, K. Y. Yang, M. H. P. Pfeiffer, T. J. Kippenberg, E. Norberg, L. Theogarajan, K. Vahala, N. R. Newbury, K. Srinivasan, J. E. Bowers, S.A. Diddams, S. B. Papp An Integrated-Photonics Optical-Frequency Synthesizer Nature Photonics, 557, 81-85, April 25, 2018.
X. Zheng, H. Li, M. Guidry, B. Romanczyk , E. Ahmadi, K. Hestroffer, S. Wienecke , S. Keller, U.K. Mishra Analysis of MOCVD SiNx Passivated N-Polar GaN MIS-HEMTs on Sapphire With High fmax·VDS,Q, IEEE Electron Device Letters, Vol. 39, No. 3, March 2018
H. Huang, J. Duan, D. Jung, A. Liu, Z. Zhang, J. Norman, J. E. Bowers, F. Grillot Analysis of the optical feedback dynamics in InAs/GaAs quantum dot lasers directly grown on silicon Journal of the Optical Society of America B, (35)11, 2780-2787, October 12, 2018.
A.C. Espenlaub, A.I. Alhassan, S. Nakamura, C. Weisbuch, J.S. Speck Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes Appl. Phys. Lett. 112, 141106, 2018.
N.A. Butakov, M.W. Knight, T.Lewi, P.P. Iyer, D. Higgs, H.T. Chorsi, J. Trastoy, J.D.V. Grande, I. Valmianski, C. Urban, Y. Kalcheim, P.Y. Wang, P.W.C. Hon, I.K. Schuller, J.A. Schuller


Broadband Electrically Tunable Dielectric Resonators Using Metal-Insulator Transitions ACS Photonics 5, pp.  4054-4060 Journal
P. Li, B. Bonef, M. Khoury, G. Lheureux,H. Li, J. Kang, S. Nakamura, S.P. DenBaars Carrier dynamics of two distinct localized centers in 530 nm InGaN green light-emitting diodes Superlattices and Microstructures 113  684-689
K. Ahadi,Z. Gui, Z. Porter, J. W. Lynn, Z. Xu, S. D. Wilson, A. Janotti, S. Stemmer Carrier Density Control of Magnetism and Berry Phases in Doped EuTiO3 APL Mater. 6, 056105 (2018).
S. Liu, T. Komljenovic, S. Srinivasan, E. Norberg, G. Fish, J. E. Bowers Characterization of a fully integrated heterogeneous silicon/III-V colliding pulse mode-locked laser with on-chip feedback Optics Express, (26)8, 9714-9723, April 4, 2018.
M.J. Weaver, F.Buters, F.Luna, H.Eerkens, K. Heeck, S. de Man, D.Bouwmeester Coherent optomechanical state transfer between disparate mechanical resonators Nature Communicationsvolume 8, Article number: 824 (2017)
S.H. Chan, D.Bisi, M. Tahhan, C. Gupta, S.P. DenBaars, S. Keller, E. Zanoni, U.K. Mishra Comparing electrical characteristics of in situ and ex situ Al2O3/GaN interfaces formed by metalorganic chemical vapor deposition Applied Physics Express, Vol. 11, No. 4, 13 March 2018
D.L. Becerra, D.A. Cohen, S. Mehari, S.P. DenBaars, S. Nakamura Compensation effects of high oxygen levels in semipolar AlGaN electron blocking layers and their mitigation via growth optimization Journal of Crystal Growth 507  118–123
C.A. Forman, S.G. Lee, E.C. Young, J.A. Kearns, D.A. Cohen, J.T. Leonard, T. Margalith, S.P. DenBaars,S. Nakamura Continuous-wave operation of m-plane GaN-based vertical-cavity surface-emitting lasers with a tunnel junction intracavity contact Applied Physics Letters, Vol. 112, Issue 11, 2018.
S.R. Meeker, B.A. Mazin, A.B. Walter, P. Strader, N.Fruitwala, C. Bockstiegel, P. Szypryt, G. Ulbricht, G. Coiffard, B. Bumble, G. Cancelo, T. Zmuda, K. Treptow, N. Wilcer, G. Collura, R. Dodkins, I. Lipartito, N. Zobrist, M. Bottom, J. C. Shelton, D. Mawet, J.C. van Eyken, G. Vasisht, E. Serabyn DARKNESS: A Microwave Kinetic Inductance Detector Integral Field Spectrograph for High-contrast Astronomy Astronomical Society of the Pacific, Volume 130, Issue 988, pp. 065001 (2018).
M. Buffolo, M. Pietrobon, C. De Santi, F. Samparisi, M. L. Davenport, J. E. Bowers, G. Meneghesso, E. Zanoni, M. Meneghini Degradation mechanisms of heterogeneous III-V/Silicon loop-mirror laser diodes for photonic integrated circuits Microelectronics Reliability, 88-90, 855-858, September 30, 2018.
B. Romanczyk, S. Wienecke, M. Guidry, H. Li, E. Ahmadi, X. Zheng, S. Keller, U.K. Mishra Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs IEEE Transactions On Electron Devices, Vol. 65, No. 1, Jan 2018
S. Mehari, D.A. Cohen, D.L. Becerra, S. Nakamura, S.P. DenBaars Demonstration of enhanced continuous-wave operation of blue laser diodes on a semipolar 20(21)over-bar GaN substrate using indium-tin-oxide/thin-p-GaN cladding layers Optics Express, Vol. 26, Issue 2,1564 2018.
A.I. Alhassan, N.G. Young, R.M. Farrell, C. Pynn, F. Wu, A.Y. Alyamani, S. Nakamura, S.P. Denbaars, J.S. Speck Development of high performance green c-plane III-nitride light-emitting diodes Optics express, vol. 26, no. 5: Optical Society of America, pp. 5591–5601, 2018.
B. Saifaddin, C. J. Zollner, A. Almogbel, H. Foronda, F. Wu, A. Albadri, A. Al Yamani, M. Iza, S. Nakamura, S. P. DenBaars, et al. Developments in AlGaN and UV-C LEDs grown on SiC Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII, vol. 10554: International Society for Optics and Photonics, pp. 105541E, 2018.
R. Salemmilani, B.D. Piorek, A.W. FountainIII, M. Moskovits, C.D. Meinhart Dielectrophoretic Nanoparticle Aggregation for On-Demand Surface Enhanced Raman Spectroscopy Analysis Anal. Chem.201890137930-7936

Publication Date:June 4, 2018

W. Xie, J. Huang, T. Komljenovic, L. Coldren, J. Bowers Diffraction Limit in Centimeter Scale: Metasurface Grating Antenna for Phased Array LiDAR arXiv, arXiv:1810.00106, September 28, 2018.
D. Inoue, D. Jung, J. Norman, Y. Wan, N. Nishiyama, S. Arai, A. C. Gossard, J. E. Bowers Directly modulated 1.3 μm quantum dot lasers epitaxially grown on silicon Optics Express, (26)6, 7022-7033, March 7, 2018.
Y. Wan, D. Inoue, D. Jung, J.C. Norman, C. Shang, A.C. Gossard, J.E. Bowers Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability Photonics Research Vol. 6, Issue 8, pp. 776-781 (2018) •
D. Jung, D.J. Ironside, S.R. Bank, A.C. Gossard, J.E. Bowers Effect of growth interruption in 1.55 μm InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy Journal of Applied Physics 123, 205302 (2018);
J. Kim, H. Kim, M. E. Kilic, C. Gayner, R. Koltun, H. Park, A. Soon, J. Bowers, C. Palmstrøm, W. Kim Effect of phonon confinement on the thermal conductivity of In0.53Ga0.47As nanofilms Journal of Applied Physics, 123, 245103, June 25, 2018.
Z. Zhang, D. Jung, J. C. Norman, P. Patel, W. W. Chow, J. E. Bowers Effects of modulation p doping in InAs quantum dot lasers on silicon Applied Physics Letters, 113, 061105, August 7, 2018.
P. B. Marshall, K. Ahadi, H. Kim, S. Stemmer Electron nematic fluid in a strained Sr3Ru2O7 film Phys. Rev. B 97, 155160 (2018).
J. A. Frey, H. J. Snijders, J. Norman, A. C. Gossard, J. E. Bowers, W. Loffler, D. Bouwmeester Electro-optic polarization tuning of microcavities with a single quantum dot Optics letters 43 (17), 4280-4283
J. A. Frey, H. J. Snijders, J. Norman, A. C. Gossard, J. E. Bowers, W. Lӧffler, D. Bouwmeester Electro-optic tuning of microcavities with a single quantum dot arXiv, arXiv:1805.03387, May 9, 2018.
A. A. Zibrov, R. Peng, C. Kometter, J.I.A. Li, C. R. Dean, T. Taniguchi, K. Watanabe, M. Serbyn, A. F. Young Emergent Dirac gullies and gully nematic quantum Hall states in ABA trilayer graphene Physical Review Letters  121, 167601.
C. Conner, T. de Visser, J. Loessberg, S. Sherman, A. Smith, S. Ma, M.T. Napoli, S. Pennathur, D. Weld Energy Harvesting with a Liquid-Metal Microfluidic Influence Machine Phys. Rev. Applied 9, 044008 (2018)
H. Li, S. Wienecke, B. Romanczyk, E. Ahmadi, M. Guidry, X. Zheng, S. Keller, U.K. Mishra Enhanced mobility in vertically scaled N-polar high-electron-mobility transistors using GaN/InGaN composite channels Applied Physics Letters, Vol. 112, No. 7, 13 Feb 2018
A. A. Zibrov,E.M.Spanton, H.Zhou, C. Kometter, T. Taniguchi, K. Watanabe, A.F. Young Even denominator fractional quantum Hall states at an isospin transition in monolayer graphene Nature Physics 14, 930-935 (2018).
H. Snijders, J. A. Frey, J. Norman, V. P. Post, A. C. Gossard, J. E. Bowers, M. P. van Exter, W. Löffler, D. Bouwmeester Fiber-coupled Cavity-QED Source of Identical Single Photons Physical Review Applied,  9, 031002, March 28, 2018.
P. V. Klimov, J. Kelly, J. Chen, M. Neeley, A. Megrant, B. Burkett, R. Barends, K. Arya, B. Chiaro, Y. Chen, A. Dunsworth, A. Fowler, B. Foxen, C. Gidney, M. Giustina, R. Graff, T. Huang, E. Jeffrey, Erik Lucero, J. Mutus, O. Naaman, C. Neill, C. Quintana, P. Roushan, Daniel Sank, A. Vainsencher, J. Wenner, T. White, S. Boixo, R. Babbush, V. Smelyanskiy, H. Neven, John M. Martinis Fluctuations of Energy-Relaxation Times in Superconducting Qubits arXiv:1809.01043, September 2018
K. Scida, A. Eden, N. Arroyo-Curras, S. MacKenzie, Y. Satik, C.D. Meinhart, J.C. Eijkel, S. Pennathur Fluorescence-Based Observation of Transient Electrochemical and Electrokinetic Effects at Nanoconfined Bipolar Electrodes ACS applied materials & interfaces. 2019 Mar 18.
R.-L. Chao, L. Liang, J.-W. Shi, T. Komljenovic, J. Hulme, M. J. Kennedy, J. E. Bowers Fully Integrated Photonic Millimeter-Wave Tracking Generators on Heterogeneous III-V/Si Platform IEEE Photonics Technology Letters, (30)10, 919-922, April 10, 2018.
S.G. Lee, C.A. Forman, C. Lee, J. Kearns, E.C. Young, J.T. Leonard, D.A. Cohen, J.S. Speck, S. Nakamura, S.P. DenBaars GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition Applied Physics Express, Vol. 11, Issue 6, 062703, 2018.
M.N. Fireman, H. Li, S. Keller, U. K. Mishra, J. S. Speck Growth of N-polar GaN by ammonia molecular beam epitaxy Journal of Crystal Growth, vol. 481: North-Holland, pp. 65–70, 2018.
H. Nili, G.C. Adam, B. Hoskins, M. Prezioso, J. Kim, M.R. Mahmoodi, F. Merrikh Bayat, O. Kavehei, D.B. Strukov Hardware-intrinsic security primitives enabled by analogue state and nonlinear conductance variations in integrated memristors Nature Electronics 1, pp. 197–202, 2018 (Journal Cover).
J.E. Bowers, L. Chang Heterogeneous integration for optical signal processing Roadmap on Optical Signal Processing submitted (2018).
M. L. Davenport, M. A. Tran, T. Komljenovic, J. E. Bowers Heterogeneous Integration of III-V lasers on Si by Bonding Book Chapter 6, Semiconductors and Semimetals, Vol. 99, Academic Press, October 8, 2018.
W. Xie, T. Komljenovic, J. Huang, M. Tran, M.L. Davenport, A. Torres, P. Pintus,  J. Bowers Heterogeneous Silicon Photonics Sensing for Autonomous Cars Optics Express (2018).
L. Chang, A. Boes, X. Guo, D. T. Spencer, MJ. Kennedy, J. D. Peters, N. Volet, J. Chiles, A. Kowligy, N. Nader,  D. D. Hickstein, E. J. Stanton, S. A. Diddams, S. B. Papp, J. E. Bowers Heterogeneously Integrated GaAs waveguides on Insulator for Efficient Frequency Conversion Laser and Photonics Reviews, (12)10, 1800149, August 14, 2018.
R. Jones, P. Doussiere, J. B. Driscoll, W. Lin, H. Yu, Y. Akulova, T. Komljenovic, J. E. Bowers Heterogeneously Integrated Photonics Nanotechnology Magazine (2018).
M.S. Wong, D. Hwang, A.I. Alhassan, C. Lee, R. Ley, S. Nakamura, S.P. DenBaars High efficiency of III-nitride micro-light-emitting diodes by sidewall passivation using atomic layer deposition Optics Express, Vol. 26, Issue 16, 2018.
R. Helkey, A. Saleh, J. Buckwalter, J.E. Bowers High Performance Photonic Integrated Circuits on Silicon JSTQE Dec. 2018.
J.C. Norman, D. Jung, Z. Zhang, Y. Wan, S. Liu, C. Shang, R.W. Herrick, W.W. Chow, A.C. Gossard, J.E. Bowers High Performance Quantum Dot Lasers on Silicon JQE Sept 2018.
B.P. Yonkee, E.C. Young, S.P. DenBaars, J.S. Speck, S. Nakamura High reflectivity Ohmic contacts to n-GaN utilizing vacuum annealed aluminum Semiconductor Science and Technology, Vol. 33, Issue 1, 015015, 2018.
N. Arroyo-Curras, K. Scida, K.L. Ploense, T.E. Kippin, K.W. Plaxco High Surface Area Electrodes Generated via Electrochemical Roughening Improve the Signaling of Electrochemical Aptamer-Based Biosensors Anal. Chem. 2017, 89, 12185-12191.
B.E. Tew, P. Vempati, L.E. Clinger, N.I. Halaszynski, Gilles, Pernot, T. Favaloro, C.C. Bomberger, A. Shakouri, J.E. Bowers, J-H. Bahk,  J. M. O. Zide High Thermoelectric Power Factor and ZT in TbAs:InGaAs EpitaxialNanocomposite Material submitted High Thermoelectric Power Factor (2018).
S. Liu, X. Wu, D. Jung, J.C. Norman, M. Kennedy, H.K. Tsang, A.C. Gossard, J.E. Bowers High-channel-count low-noise 20 GHz passively mode locked quantum dot laser directly grown on Si with 4.1 Tbit/s transmission capacity submitted to Optica (2018).
C. Weisbuch Historical perspective on the physics of artificial lighting Comptes Rendus Physique 19, 3, 2018.
D.J. Myers, , K. Gelžinytė, W. Ying Ho, J. Iveland, L. Martinelli, J. Peretti, C. Weisbuch, J. S. Speck Identification of low-energy peaks in electron emission spectroscopy of InGaN/GaN light-emitting diodes Journal of Applied Physics, vol. 124, pp. 055703, 2018.
R. Hermann, M.J. Gordon Imaging Intermolecular Exciton Coupling in Metal-Free Phthalocyanine Nanofilms Using Tip-Enhanced Near-Field Optical Microscopy J. Phys. Chem. C 2018, 122, 26, 14796-14804.
M. Monovarian, A. Rashidi, A. A. Aragon, S. H. Oh, A. K. Rishinaramangalam, Steven P. DenBaars, D. Feezell Impact of crystal orientation on the modulation bandwidth of InGaN/GaN light-emitting diodes Applied Physics Letters, 2018.
D. Jung, R. Herrick, J. Norman, K. Turnlund, C. Jan, K. Feng, A. C. Gossard, J. E. Bowers Impact of threading dislocation density on the lifetime of InAs quantum dot laser on Si Applied Physics Letters, 112, 153507, April 13, 2018.
F. Merrikh Bayat, M. Prezioso, B. Chakrabarti, H. Nili, I. Kataeva, D. Strukov Implementation of multilayer perceptron network with highly uniform passive memristive crossbar circuits Nature Communications 9, art. 2331, 2018.
M. L. Davenport, S. Liu, J. E. Bowers Integrated heterogeneous silicon/III-V mode-locked lasers Photonics Research, (6)5, 468-478, April 20, 2018.
T. A. Huffman, G. M. Brodnik, C. Pinho, S. Gundavarapu, D. Baney, D. J. Blumenthal Integrated Resonators in an Ultralow Loss Si3N4/SiO2 Platform for Multifunction Applications IEEE Journal of Selected Topics in Quantum Electronics, vol. 24, no. 4, pp. 1-9, July-Aug (2018).
Y. Liu et al. Integrated Silicon Nitride Optical Beamforming Networks for Wideband Communications Integrated Photonics Research, Silicon and Nanophotonics, 2018, p. ITh3B–4.
P. Bhasker, J. Norman, J. Bowers, N. Dagli Intensity and Phase Modulators at 1.55 μm in GaAs/AlGaAs Layers Directly Grown on Silicon IEEE/OSA J. of Lightwave Technology, vol. LT-36, No. 18, pp. 4205-4210, September 15, 2018.
A. Spott, E. J. Stanton, A. Torres, M. L. Davenport, C. L. Canedy, I. Vurgaftman, M. Kim, C. S. Kim, C. D. Merritt, W. W. Bewley, J. R. Meyer, J. E. Bowers Interband Cascade Laser on Silicon Optica, (5)8, 996-1005, August 16, 2018.
C-C. Chang, A. Nowbahar, V. Mansard, I. Williams, J. Mecca, A. Schmitt, T. Kalantar, T-C. Kuo, T.M. Squires Interfacial rheology and heterogeneity of aging asphaltene layers at the water-oil interface Langmuir , 34, 5409−5415 (2018) 10.1021/acs.langmuir.8b00176.
S. Gundavarapu, M. Belt, T.A. Huffman, M.A. Tran, T. Komljenovic, J.E. Bowers, D.J. Blumenthal Interferometric Optical Gyroscope Based on an Integrated Si3N4 Low-Loss Waveguide Coil J. Lightwave Technol. 36, 1185-1191 (2018).
D. Feezell, S. Nakamura Invention, development, and status of the blue light-emitting diode, the enabler of solid-state lighting C.R.Physique 19 113–133
C. Lund, A. Agarwal, B. Romanczyk, T. Mates, S. Nakamura, S.P. Denbaars, U.K. Mishra, S. Keller Investigation of Mg delta-doping for low resistance N-polar p-GaN films grown at reduced temperatures by MOCVD Semiconductor Science and Technology, Vol. 33, Issue 9, 2018.
B.A. Mazin, G.D. Becker, G. Cancelo, K. France, W.C. Fraser, T. Jones, S.R. Meeker, K. O'Brien, J.X. Prochaska, S. Tendulkar, G. Vasisht KRAKENS: a superconducting MKID integral field spectrograph concept for the Keck I telescope SPIE, Volume 10702, id. 107020H 20 pp. (2018).
C. Weisbuch, E. Spitz, A. David LEDs: The new revolution in lighting Foreword Comptes Rendus Physique 19, 3, 2018.
J. Wu,Y. Fang, B. Markman, H-Y. Tseng, M.J. W. Rodwell, Lg=30 nm InAs Channel MOSFETs Exhibitingfmax=410 GHz andft=357 GHz IEEE ELECTRON DEVICE LETTERS, VOL. 39, NO. 4, APRIL 2018
K. Sun, D. Jung, C. Shang, A. Liu, J. Morgan, J. Zang, Q. Li, J. Klamkin, J. E. Bowers, A. Beling Low dark current III–V on silicon photodiodes by heteroepitaxy Optics Express, (26)10, 13605-13613, May 11, 2018.
D. Inoue, Y. Wan, D. Jung, J. Norman, C. Shang, N. Nishiyama, S. Arai, A. C. Gossard, J. E. Bowers Low-dark current 10 Gbit/s operation of InAs/InGaAs quantum dot p-i-n photodiode grown on on-axis (001) GaP/Si Applied Physics Letters, 113, 093506, August 30, 2018.
Y. Liu, B. Isaac, J. Kalkavage, E. Adles, T. Clark, J. Klamkin Low-loss silicon nitride integrated optical beamforming network for wideband communication Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XI, 2018, vol. 10531, p. 1053 118.
Y. Wan, D. Jung, C. Shang, N. Collins, I. MacFarlane, J. Norman, M. Dumont, A. C. Gossard, J. E. Bowers Low-Threshold Continuous-Wave Operation of Electrically-Pumped 1.55 μm InAs Quantum Dash Microring Lasers ACS Photonics, December 26, 2018.
A. Nowbahar, V. Mansard, J.  Mecca, M. Paul, T.  Arrowood, T. M. Squires Measuring Interfacial Polymerization Kinetics Using Microfluidic Interferometry J. Am. Chem. Soc. 140 , 3173 - 3176 (2018).
H. Wu, C. Li, L. Song, H.-K. Tsang, J. E. Bowers, and D. Dai Meta-surface-enabled ultra-sharp multimode waveguide bends on silicon arXiv:1811.06914, October 14, 2018.
D. Hwang, A.J. Mughal, M.S. Wong, A.I. Alhassan,S. Nakamura, S,P. DenBaars Micro-light-emitting diodes with III-nitride tunnel junction contacts grown by metalorganic chemical vapor deposition Appl. Physics Express, Vol. 11, Issue 1, 012102, 2018.
N. Volet, X. Yi, Q.-F. Yang, E. J. Stanton, P. A. Morton, K. Y. Yang, K. J. Vahala and J. E. Bowers Micro-Resonator Soliton Generated Directly with a Diode Laser Laser & Photonic Reviews, (12)5, 1700307, April 17, 2018.
T. N. Do, H. Phan, T.-Q. Nguyen, and Y. Visell Miniature Soft Electromagnetic Actuators for Robotic Applications Advanced Functional Materials, 2018. Cover article.
R.Dodkins, S.Mahashabde, K.O’Brien, N.Thatte, N.Fruitwala, A.B.Walter, S.R.Meeker, P.Szypryt, B.A.Mazin MKID digital readout tuning with deep learning Astronomy and Computing

Volume 23, April 2018, Pages 60-71

S. Liu,  J. C. Norman,  D. Jung, MJ Kennedy, A. C. Gossard and J. E. Bowers Monolithic 9 GHz passively mode locked quantum dot lasers directly grown on on-axis (001) Si Applied Physics Letters, (113)4, 041108, July 27, 2018.
L.C. Chan, D.E. Morse, and M.J. Gordon Moth eye-inspired anti-reflective surfaces for improved IR optical systems & visible LEDs fabricated with colloidal lithography and etching Bioinspir. & Biomim. 13, 041001 (2018).
R. Jiang, X. Shen, J. Fang, P. Wang, E.X. Zhang, J. Chen, D.M. Fleetwood, R.D. Schrimpf, S.W.Kaun, E,C.H. Kyle, et al. Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs IEEE Transactions on Device and Materials Reliability, vol. 18, pp. 364-376, Sept, 2018.
E.J. Stanton, A. Spott, J. Peters, M.L. Davenport, A. Malik, N. Volet, J. Liu, C.D. Merritt, W.W. Bewley, I. Vurgaftman, C.S. Kim, J.R. Meyer, J.E. Bowers Multi-spectral quantum cascade lasers on silicon with integrated multiplexers Submitted 2018.
A. S. P. Khope, M. Saeidi, R. Yu, X. Wu, A. Netherton, Y. Liu, Z. Zhang, Y. Zia, G. Fleeman, A. Spott, S. Pinna, C. Schow, R. Helkey, L. Theogarajan, R. C. Alferness, A. Saleh, and J. E. Bowers Multi-wavelength selective crossbar switch submitted to Optics Express, 2018.
R. Katsumata, R. Limary, Y. Zhang, B.C. Popere, A.T. Heitsch, M. Li, P. Trefonas, R.A. Segalman Mussel-inspired strategy for stabilizing ultrathin polymer films and its application to spin-on doping of semiconductors Chem. Mater., 30, 5285-5292 (2018). [DOI]
A. Ariyaratne, D. Bluvstein, B. A. Myers & A. C. Bleszynski Jayich Nanoscale electrical conductivity imaging using anitrogen-vacancy center in diamond Nature Communications volume 9, Article number: 2406 (2018)
R. Hermann and M.J. Gordon Nanoscale optical microscopy and spectroscopy using near-field probes Ann. Rev. Chem. Bio. Eng. 9, 1 (2018).
L. Galletti, T. Schumann, T. E. Mates, and S. Stemmer Nitrogen surface passivation of the Dirac semimetal Cd3As2 Phys. Rev. Mater. 2, 124202 (2018).
O.S. Koksaldi, J. Haller, H. Li, B. Romanczyk, M. Guidry, S. Wienecke, S. Keller, U.Mishra N-Polar GaN HEMTs Exhibiting Record Breakdown Voltage Over 2000 V and Low Dynamic On-Resistance EDL, July 2018
S-H. Han, A. Mauze, E. Ahmadi, T. Mates, Y. Oshima, and J. S. Speck n-type dopants in (001) β-Ga2O3 grown on (001) β-Ga2O3 substrates by plasma-assisted molecular beam epitaxy Semiconductor Science and Technology, vol. 33, no. 4: IOP Publishing, pp. 045001, 2018.
E. M. Spanton, A. A. Zibrov, H. Zhou, T. Taniguchi, K. Watanabe, M. P. Zaletel, A. F. Young Observation of fractional Chern insulators in a van der Waals heterostructure Science 360, 62–66 (2018).L. Galletti, T. Schumann, T. E. Mates, and S. Stemmer, Nitrogen surface passivation of the Dirac semimetal Cd3As2, Phys. Rev. Mater. 2, 124202 (2018).
T. Schumann, L. Galletti, D. A. Kealhofer, H. Kim, M. Goyal, and S. Stemmer Observation of the quantum Hall effect in confined films of the three-dimensional Dirac semimetal Cd3As2 Phys. Rev. Lett. 120, 016801 (2018).
H. J. Snijders,J. A. Frey,J. Norman,H. Flayac,V. Savona,A. C. Gossard,J. E. Bowers,M. P. van Exter,D. Bouwmeester,W. Löffler Observation of the Unconventional Photon Blockade PHYSICAL REVIEW LETTERS121,043601 (2018)
J. Kang, Y. Matsumoto, X. Li, J. Jiang, X. Xie, K. Kawamoto, M. Kenmoku, J. H. Chu, W. Liu, J. Mao, K. Ueno, K. Banerjee On-Chip Intercalated-Graphene Inductors for Next-Generation Radio Frequency Electronics Nature Electronics, Vol. 1, No. 1, pp. 46-51, 2018.
D. Valovcin, H.B. Banks, S. Mack, A. Gossard, K. West, L.  Pfeiffer, M.S. Sherwin Optical Frequency Combs from High-Order Sideband Generation Optics Express 26, 29807-29816 (2018) [www][arXiv]
N. Dagli Optical Modulators Handbook of Optoelectronics, 2nd Edition: Concepts, Devices and Techniques, vol. 1, Chapter 14, pp. 457-514, CRC Press, Taylor and Francis, 2018.
T. Mizumoto, R. Baets, and J. E. Bowers Optical nonreciprocal devices for silicon photonics using wafer-bonded magneto-optical garnet materials MRS Bulletin, (43)6, 419-424, June 11, 2018.
J. C. Norman, D. Jung, Y. Wan, and John E. Bowers Perspective: The Future of Quantum Dot Photonic Integrated Circuits Applied Physics Letters Photonics, (3)3, 030901, March 27, 2018.
M. J. Weaver, D. Newsom, F. Luna, W. Löffler, D. Bouwmeester Phonon interferometry for measuring quantum decoherence Phys. Rev. A 97, 063832 – Published 14 June 2018
T. Komljenovic, D. Huang, P. Pintus, M. A. Tran, M. L. Davenport, and J. E. Bowers Photonic Integrated Circuits Using Heterogeneous Integration on Silicon Proceedings of the IEEE, (106)12, 2246-2257, August 30, 2018.
A. Y. Liu and J. Bowers Photonic Integration with Epitaxial III-V on Silicon IEEE Journal of Selected Topics in Quantum Electronics, (24)6, 6000412, July 9, 2018.
M. Buffolo, F. Samparisi, C. De Santi, G. Meneghesso, E. Zanoni, D. Jung, J. Bowers, R. W. Herrick, and M. Meneghini Physical Origin of the Optical Degradation of InAs Quantum Dot Lasers submitted to Journal of Quantum Electronics (JQE) (2018).
W. Jin, R. G. Polcawich, P. Morton, and J. Bowers Piezoelectrically tuned silicon nitride ring resonator Optics Express, (26)3, 3174-3187, February 5, 2018.
A.E. Cetin,P. Iyidogan, Y. Hayashi, M. Wallen, K. Vijayan,†E. Tu, M. Nguyen, A. Oliphant Plasmonic Sensor Could Enable Label-Free DNA Sequencing ACS Sens. 2018, 3, 561−568.
H.J. Snijders, D.N.L. Kok, M.F. van de Stolpe, J. A. Frey, J. Norman A. C. Gossard, J. E. Bowers, M.P. van Exter, D. Bouwmeester, and W. Löffler Polarized quantum dot cavity-QED and single photons submitted Physical Review Applied (2018).
D. Ding, D. van Driel, L. M. C. Pereira, J. F. Bauters, M. J. R. Heck, G. Welker, M. J. A. de Dood, A. Vantomme, J. E. Bowers, W. Loer, and D. Bouwmeester Probing interacting two-level systems with rare-earth ions arXiv, arXiv:1811.05248, November 13, 2018.
L.Y. Kuritzky, C. Weisbuch, and J. S. Speck Prospects for 100% wall-plug efficient III-nitride LEDs Opt. Express, vol. 26, pp. 16600–16608, Jun, 2018.
?. Polshyn, H. Zhou, E. M. Spanton, T. Taniguchi, K. Watanabe, and A. F. Young Quantitative transport measurements of fractional quantum Hall energy gaps in edgeless graphene devices Physical Review Letters 121, 226801 (2018).
J.C. Norman, D. Jung, Z. Zhang, Y. Wan, S. Liu, C. Shang, R. Herrick, W.W. Chow, A.C. Gossard, J.E. Bowers Quantum Dot Lasers for Monolithic Photonic Integration JQE (2018).
D. Jung, J. Norman, Y. Wan, S. Liu, R. Herrick, J. Selvidge, K. Mukherjee, A. C. Gossard, and J. E. Bowers Recent Advances in InAs Quantum Dot Lasers Grown on on-axis (001) Silicon by Molecular Beam Epitaxy Physica Status Solidi A, (216)1, 1800602, January 9, 2019.
A.I. Alhassan, E.C. Young, A.Y. Alyamani, .Albadri, S.Nakamura, S.P. DenBaars, J.S. Speck Reduced-droop green III-nitride light-emitting diodes utilizing GaN tunnel junction Applied Physics Express, Vol. 11, Issue 4, 042101, 2018.
Z. Gu, S. Pandya, A. Samanta, S. Liu, G. Xiao, C. J. G. Meyers, A. R. Damodaran, H. Barak, A. Dasgupta, S. Saremi, A. Polemi, L. Wu, A.A. Podpirka, A. Will-Cole,C.J. Hawley, P.K.Davies, R.A. York, I. Grinberg, L.W. Martin, J.E. Spanier Resonant domain-wall-enhanced tunable microwave ferroelectrics 2018 Springer Nature Limited,
Y. Kalcheim, N.A. Butakov, N. Vargas, M.H. Lee, J.D.V. Grande, J. Trastoy, P. Salev, J.A. Schuller, and I.K. Schuller
Robust Coupling between Structural and Electronic Transitions in a Mott Material Physical Review Letters 122, pp. 057601, 1-6 Journal
G. Yu, A. Jenkins, X. Ma, S. A. Razavi, C. He, G. Yin, Q. Shao, Q. L. He, H. Wu, W. Li, W. Jiang, X. Han, X. Li, A. C. Bleszynski Jayich, P. Khalili Amiri, and K. L. Wang Room-Temperature Skyrmions in an Antiferromagnet-Based Heterostructure Nano Lett., 2018, 18 (2), pp 980–986
J. Lozi, O. Guyon, N. Jovanovic, S. Goebel, P. Prashant N. Skaf, A. Sahoo, B. Norris, F. Martinache M. N'Diaye, B. Mazin, A.B. Walter, P. Tuthill, T. Kudo, H. Kawahara, T. Kotani, M. Ireland, N. Cvetojevic, E. Huby, S. Lacour, V. Sébastien; T.D. Groff, J.K. Chilcote, J. Kasdin, J. Knight, F. Snik, D. Doelman, Y Minowa, C. Clergeon, N. Takato, M. Tamura, T. Currie, H. Takami, M. Hayashi SCExAO, an instrument with a dual purpose: perform cutting-edge science and develop new technologies SPIE, Volume 10703, id. 1070359 12 pp. (2018).
J.S. Lee, S. Choi, M. Pendhakar, D.J. Pennachio, B. Markman, M.J.W. Rodwell, P. Krogstrup, and C.J. Palmstrom Selective-area chemical beam epitaxy of in-plane one-dimensional channels grown on InP(001) and InP(111)B surfaces Submitted(2018) – arXiv:1808.04563.
J. Duan, H. Huang, D. Jung,  Z. Zhang, J. Norman, J. E. Bowers, and F. Grillot Semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth enhancement factor Applied Physics Letters, 112, 251111, June 21, 2018.
M. Khoury, H. Li, B.Bonef, L.Y. Kuritzky, A.J. Mughal,S.Nakamura, J.S. Speck, S.P. DenBaars Semipolar (20(2)over-bar1) GaN templates on sapphire: 432nm InGaN light-emitting diodes and light extraction simulations Applied Physics Express, Vol. 11, Issue 3, 036501, 2018.
C. Lee, C. Shen, C. Cozzan, R. M. Farrell, S. Nakamura, A. Y. Alyamani, B. S. Ooi, J. E. Bowers, S. P. DenBaars, and J. S. Speck Semipolar GaN-based laser diodes for Gbit/s white lighting communication: devices to systems Gallium Nitride Materials and Devices XIII, vol. 10532: International Society for Optics and Photonics, pp. 105321N, 2018.
S. Mehari, D.A. Cohen, D.L Becerra, S. Nakamura, S.P. DenBaars Semipolar InGaN blue laser diodes with a low optical loss and a high material gain obtained by suppression of carrier accumulation in the p-waveguide region Japanese Journal of Applied Physics 58, 2
C. Shen, T.K. Ng, C. Lee, S. Nakamura, J.S. Speck, S.P. Denbaars, A.Y. Alyamani, M.M. El-Desouki, B.S. Ooi Semipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications Optics express, vol. 26, no. 6: Optical Society of America, pp. A219–A226, 2018.
D.J. Blumenthal, R. Heideman, D. Geuzebroek, A. Leinse and C. Roeloffzen Silicon nitride in silicon photonics Proceedings of the IEEE Special Issue on Silicon Photonics, Vol. 106 No. 12 DOI: 10.1109/JPROC.2018.2861576 (2018)
H.J. Snijders, J. A. Frey, J. Norman, H. Flayac, V. Savona, A. C. Gossard, J. E. Bowers, M. P. van Exter, D. Bouwmeester, W. Löffler Single photons and unconventional photon blockade in quantum dot cavity-QED > quant-ph > arXiv:1803.10992
A. Jenkins, M. Pelliccione, G. Yu, X. Ma, X. Li, K. L. Wang, A. C. Bleszynski Jayich Single spin sensing of domain wall structure and dynamics in a thin film skyrmion host arXiv:1812.01764, December 2018
M. Prezioso, M. Mahmoodi, F. Merrikh Bayat, H. Kim, H. Nili, A. Vincent, and D. Strukov Spike-timing-dependent plasticity learning of coincidence detection with passively integrated memristive circuits Nature Communications 9, art. 5311, 2018.
C. Zube, J. Malindretos, L. Watschke, R.R. Zamani, D. Disterheft, R.G. Ulbrich, A.Rizzi, M. Iza, S. Keller, S.P. DenBaars Spin injection in epitaxial MnGa(111)/GaN(0001) heterostructures Journal of Applied Physics Vol. 123, Issue 3, 2018
K. Ahadi, H. Kim, and S. Stemmer Spontaneous Hall effects in the electron system at the SmTiO3/EuTiO3 interface APL Mater. 6, 056102 (2018).
A. Boes, B. Corcoran, L. Chang, J. Bowers, and A. Mitchell Status and Potential of Lithium Niobate on Insulator (LNOI) for Photonic Integrated Circuits Laser & Photonics Reviews, (12)4, 1700256, February 23, 2018.
L. Megalini, S. T. Š. Brunelli, W. O. Charles, A. Taylor, B. Isaac, J. E. Bowers, and J. Klamkin Strain-Compensated InGaAsP Superlattices for Defect Reduction of InP Grown on Exact-Oriented (001) Patterned Si Substrates by Metal Organic Chemical Vapor Deposition Materials, 11, 337, February 28, 2018.
L. Chang, A. Boes, P. Pintus, J. Peters, M. Kennedy, X-W. Guo, N. Volet, S-P. Yu, S. Papp, J. Bowers Strong frequency conversion in heterogeneously integrated GaAs resonators submitted to Optica (2018).
S. Sonar, V. Fedoseev, M.J. Weaver, F.Luna,E. Vlieg, H. van der Meer,D. Bouwmeester, W. Löffler Strong thermomechanical squeezing in a far-detuned membrane-in-the-middle system PHYSICAL REVIEW A98, 013804 (2018)
S. Gundavarapu, G.M. Brodnik, M. Puckett, T. Huffman, D. Bose, R. Behunin, J. Wu, T. Qiu, C. Pinho, N. Chauhan, J. Nohava, P.T. Rakich, K.D. Nelson, M. Salit, D.J. Blumenthal Sub-hertz fundamental linewidth photonic integrated Brillouin laser Nat. Photon., 13(1): 60-67 (2019).
S. Lal, J. Lu, B.J. Thibeault, M.H. Wong, S.P. DenBaars, U.K. Mishra Suppression of Anomalously Large Threshold Voltage in Wafer-Bonded Vertical Transistors by Enhancing Critical Field to Impact Ionization IEEE Transactions on Electron Devices, 2018.
N.A. Butakov, I. Valmianski, T. Lewi, C. Urban, Z. Ren, A.A. Mikhailovsky, S.D. Wilson, I.K. Schuller, J.A. Schuller
Switchable Plasmonic-Dielectric Resonators with Metal-Insulator Transitions ACS Photonics 5, pp. 371 Journal
T. Lewi, N.A. Butakov, and J.A. Schuller
Thermal Tuning Capabilities of Semiconductor Metasurface Resonators Nanophotonics 8, pp.331-338 Journal
N. Liu, J. Peters, J.A. Floro, A. Ramu, J.E. Bowers, M. Zebarjadi Thermoelectric transport at F4TCNQ-silicon interface submitted to APL Materials (2018).
M. Goyal, L. Galletti, S. Salmani-Rezaie, T. Schumann, D. A. Kealhofer, and S. Stemmer Thickness dependence of the quantum Hall effect in films of the three-dimensional Dirac semimetal Cd3As2 APL Mater. 6, 026105 (2018).
H-H. Chen, J.S. Speck, C. Weisbuch, Y-R Wu Three dimensional simulation on the transport and quantum efficiency of UVC-LEDs with random alloy fluctuations Appl. Phys. Lett. 113, 153504, 2018.
D. Huang, P. Pintus and J. E. Bowers Towards heterogeneous integration of optical isolators and circulators with lasers on silicon Optical Materials Express, (8)9, 2471-2483, August 1, 2018.
M. Monavarian, A. Rashidi, A. A. Aragon, M. Nami, S. H. Oh, S. P. DenBaars, D. Feezell Trade-off between bandwidth and efficiency in semipolar (20(2)over-bar(1)over-bar) InGaN/GaN single- and multiple-quantum-well light-emitting diodes Applied Physics Letters, Vol. 112, Issue 19, 2018.
R. Kaminker, I.Kaminker, W.R. Gutekunst, Y. Luo, S. Lee, J. Niu, S. Han, C.J. Hawker Tuning conformation and properties of peptidomimetic backbones through dual N/Cα-substitution Chem. Commun. 2018 54, 5237-5240.
R. Kaminker, A. Anastasaki, W.R. Gutekunst, Y. Luo, S-H. Lee, C.J. Hawker Tuning of protease resistance in oligopeptides through N-alkylation Chem. Commun. 2018 54, 9631-9634.
L. Galletti, T. Schumann, O. F. Shoron, M. Goyal, D. A. Kealhofer, H. Kim, and S. Stemmer Two-Dimensional Dirac Fermions in Thin Films of Cd3As2 Phys. Rev. B 97, 115132 (2018).
Y. Liu et al. Ultra-Low-Loss Silicon Nitride Optical Beamforming Network for Wideband Wireless Applications IEEE J. Sel. Topics Quantum Electron., vol. 24, no. 4, pp. 1–10, 2018.
M. A. Tran, D. Huang, T. Komljenovic, J. Peters, A. Malik, and J. E. Bowers Ultra-Low-Loss Silicon Waveguides for Heterogeneously Integrated Silicon/III-V Photonics Applied Sciences, 8, 1139, July 12, 2018.
D. Dai, J. Bowers Ultra-sharp multimode waveguide bends with subwavelength gratings Laser & Photonics Reviews (2018).
H.A. Dobbs, Y. Kaufman, J. Scott, K. Kristiansen, A.M. Schrader, S.Y. Chen, P. Duda III, J.N. Israelachvili Ultra‐Smooth, Chemically Functional Silica Surfaces for Surface Interaction Measurements and Optical/Interferometry‐Based Techniques Advanced Engineering Materials 20 (2), 1700630
C. Conner, T. de Visser,  J. Loessberg , S. Sherman, A. Smith, S. Ma, M.T. Napoli, S. Pennathur Weld D. Energy Harvesting with a Liquid-Metal Microfluidic Influence Machine Physical Review Applied. 2018 Apr 5;9(4):044008.  
A. Myzaferi, A.J. Mughal, D.A. Cohen, R.M. Farrell, S.Nakamura, J.S. Speck, S.P. Denbaars Zinc oxide clad limited area epitaxy semipolar III-nitride laser diodes Optics Express, Vol. 26, Issue 10,  12490 , 2018.