Difference between revisions of "PECVD Recipes"
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==SiN deposition (Unaxis VLR) == |
==SiN deposition (Unaxis VLR) == |
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=== SiN (2% SiH<sub>4</sub>) === |
=== SiN (2% SiH<sub>4</sub>) === |
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+ | {| border="1" class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" |
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− | *50° |
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+ | |- bgcolor="#D0E7FF" |
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+ | !width=350 align=center|50° |
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+ | !width=350 align=center|100° |
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+ | !width=350 align=center|250° |
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− | *100°C |
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+ | |-align=left |
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+ | | |
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− | + | *[[Media:PECVD2-SiN-Recipe-5W-50C-High-Stress.pdf|SiN Deposition Recipe (5W 50° High Stress)]] |
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− | *250°C |
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− | + | *[[Media:PECVD2-SiN-Recipe-120W-50C-Low-Stress.pdf|SiN Deposition Recipe (120W 50° Low Stress)]] |
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+ | | |
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− | + | *[[Media:PECVD2-SiN-Recipe-5W-100C-High-Stress.pdf|SiN Deposition Recipe (5W 100° High Stress)]] |
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+ | | |
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+ | |- |
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+ | |} |
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=== SiN (2% SiH<sub>4</sub> - No-Ar) === |
=== SiN (2% SiH<sub>4</sub> - No-Ar) === |
Revision as of 09:41, 20 August 2012
Back to Vacuum Deposition Recipes.
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
SiO2 deposition (PECVD #1)
PECVD 2 (Advanced Vacuum)
SiN deposition (PECVD #2)
SiO2 deposition (PECVD #2)
ICP-PECVD (Unaxis VLR)
SiN deposition (Unaxis VLR)
SiN (2% SiH4)
50° | 100° | 250° |
---|---|---|
SiN (2% SiH4 - No-Ar)
- 50°
- 100°C
- 250°C