Difference between revisions of "PECVD Recipes"

From UCSB Nanofab Wiki
Jump to navigation Jump to search
Line 22: Line 22:
 
=== SiN (2% SiH<sub>4</sub>) ===
 
=== SiN (2% SiH<sub>4</sub>) ===
 
*50°
 
*50°
  +
**[[Media:PECVD2-SiN-Recipe-5W-50C-High-Stress.pdf|SiN Deposition Recipe (5W 50° High Stress)]]
**
 
  +
**[[Media:PECVD2-SiN-Recipe-50W-50C-Medium-Stress.pdf|SiN Deposition Recipe (50W 50° Medium Stress)]]
**
 
  +
**[[Media:PECVD2-SiN-Recipe-120W-50C-Low-Stress.pdf|SiN Deposition Recipe (120W 50° Low Stress)]]
**
 
 
*100°C
 
*100°C
 
**[[Media:PECVD2-SiN-Recipe-5W-100C-High-Stress.pdf|SiN Deposition Recipe (5W 100° High Stress)]]
 
**[[Media:PECVD2-SiN-Recipe-5W-100C-High-Stress.pdf|SiN Deposition Recipe (5W 100° High Stress)]]

Revision as of 10:37, 17 August 2012