Difference between revisions of "PECVD Recipes"

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=[[PECVD 2 (Advanced Vacuum)]]=
 
=[[PECVD 2 (Advanced Vacuum)]]=
 
== SiN deposition (PECVD #2) ==
 
== SiN deposition (PECVD #2) ==
  +
*[[media:PECVD2-SiN-Recipe.pdf|SiN Deposition Recipe]]
 
  +
*[[media:PECVD2-SiN-Data.pdf|SiN Deposition Particle Thickness Data]]
#'''Standard clean'''
 
##'''Pump down''': stabilization time t=15", step time(m)=0', step time(s)=30"
 
##'''Pre-purge''': purge=1, stabilization time=15, step time(m)=1, step time(sec)=0
 
##'''High Pressure''': process pressure=600, RF point=300, stabilization time=35, step time(m)=30, step time(s)=0, CF4/O2(5)=500
 
##'''Low pressure''': process pressure=300, RF setpoint=300, stabilization time=15, step time(m)=30, step time(s)=0, CF4/O2(5)=500
 
#'''Nitride 2''' (HF, n=2.0, 93nm/min)
 
##process pressure=800, RF setpoint=30, stabilization time=15, step time(m)=10, step time(s)=0, 2%SiH4%He(1)=1040, N2(3)=980, NH3(2)=17
 
   
 
== SiO<sub>2</sub> deposition (PECVD #2) ==
 
== SiO<sub>2</sub> deposition (PECVD #2) ==
  +
*[[media:PECVD2-SiO2-Recipe.pdf|SiO<sub>2</sub> Deposition Recipe]]
 
  +
*[[media:PECVD2-SiO2-Data.pdf|SiO<sub>2</sub> Deposition Particle Thickness Data]]
#'''Standard clean'''
 
##'''Pump down''': stabilization time t=15", step time(m)=0', step time(s)=30"
 
##'''Pre-purge''': purge=1, stabilization time=15, step time(m)=1, step time(sec)=0
 
##'''High Pressure''': process pressure=600, RF point=300, stabilization time=35, step time(m)=30, step time(s)=0, CF4/O2(5)=500
 
##'''Low pressure''': process pressure=300, RF setpoint=300, stabilization time=15, step time(m)=30, step time(s)=0, CF4/O2(5)=500
 
#'''Oxide''' (HF, n=1.46, 25nm/min)
 
##process pressure=800, RF setpoint=30, stabilization time=15, step time(m)=10, step time(s)=0, 2%SiH4%He(1)=600, N2O(4)=1420
 
   
 
=[[ICP-PECVD (Unaxis VLR)]]=
 
=[[ICP-PECVD (Unaxis VLR)]]=

Revision as of 12:08, 16 August 2012