Difference between revisions of "PECVD 2 (Advanced Vacuum)"

From UCSB Nanofab Wiki
Jump to navigation Jump to search
(Reverted edits by Zwarburg (Talk) to last revision by Biljana)
(moved recipes to bottom (like other pages))
 
(31 intermediate revisions by 4 users not shown)
Line 2: Line 2:
 
|picture=PECVD2.jpg
 
|picture=PECVD2.jpg
 
|type = Vacuum Deposition
 
|type = Vacuum Deposition
|super= Mike Silva
+
|super= Brian Lingg
 
|phone=(805)839-3918x219
 
|phone=(805)839-3918x219
 
|location=Bay 2
 
|location=Bay 2
Line 11: Line 11:
 
|toolid=15
 
|toolid=15
 
}}  
 
}}  
= About =
+
==About==
  
 
This open-load system is dedicated to PECVD of SiO<sub>2</sub>, SiN<sub>x</sub>, SiO<sub>x</sub>N<sub>y</sub>, and a-Si using Silane (2%SiH<sub>4</sub>, 98% He), N<sub>2</sub>O, NH<sub>3</sub>, and N<sub>2</sub> gases. The sample electrode has a 270mm diameter useable area, allowing for multiple 4” wafer depositions in a single run. Standard operating temperature is 300C, but can be user changed for temps ranging anywhere from 250 to 350C. The system is equipped with a dual generator, dual frequency option for growth of low-stress Nitride films.
 
This open-load system is dedicated to PECVD of SiO<sub>2</sub>, SiN<sub>x</sub>, SiO<sub>x</sub>N<sub>y</sub>, and a-Si using Silane (2%SiH<sub>4</sub>, 98% He), N<sub>2</sub>O, NH<sub>3</sub>, and N<sub>2</sub> gases. The sample electrode has a 270mm diameter useable area, allowing for multiple 4” wafer depositions in a single run. Standard operating temperature is 300C, but can be user changed for temps ranging anywhere from 250 to 350C. The system is equipped with a dual generator, dual frequency option for growth of low-stress Nitride films.
  
=See Also=
+
==See Also==
 +
 
 
*[http://www.advanced-vacuum.se/Ny-sida-8.html Vision 310 Product Page]
 
*[http://www.advanced-vacuum.se/Ny-sida-8.html Vision 310 Product Page]
  
=Documentation=
+
== Documentation ==
*[[media:Advanced PECVD 2-Operating-Manual for Adv. PECVD 2.pdf|Operating Instruction Manual for Advanced PECVD 2]]
+
*
*[[Advanced PECVD 2 Standard recipes.pdf|Advanced PECVD 2 Standard Recipes]]
+
*
*[[Advanced PECVD 2 Data-particles, thickness, index.pdf|Advanced PECVD 2 Data-particles, thickness, index]]
+
*
 +
*
 +
*
 +
*
 +
*
 +
*
 +
*
 +
*
 +
* [https://wiki.nanotech.ucsb.edu/w/images/2/2c/SOP_for_Advanced_Vacuum_PECVD.pdf Operating Instructions]
 +
* [[Wafer Coating Process Traveler]]
 +
* For particle counting method, see the [[Wafer scanning process traveler|Surfscan Scanning Procedure]]
 +
== Recipes & Historical Data ==
 +
 
 +
* Recipes can be found on the PECVD Recipes Page:
 +
** [[PECVD Recipes#PECVD 2 .28Advanced Vacuum.29|Recipes > Vacuum Deposition Recipes > PECVD Recipes > '''<u>PECVD 2 - Advanced Vacuum</u>''']]
 +
** Thin-Films recorded: SiO2, Si3N4 and Low-Stress Si3N4
 +
** ''Historical (Process Control) Data is also shown here.''
 +
* A list of ''all available'' deposited films can be found on the Vacuum Deposition Recipes page:
 +
** [[Vacuum Deposition Recipes|Recipes > Vacuum Deposition Recipes]]

Latest revision as of 14:47, 24 August 2021

PECVD 2 (Advanced Vacuum)
PECVD2.jpg
Tool Type Vacuum Deposition
Location Bay 2
Supervisor Brian Lingg
Supervisor Phone (805) 893-8145
Supervisor E-Mail lingg_b@ucsb.edu
Description Vision 310 Advanced Vacuum PECVD
Manufacturer Veeco
Vacuum Deposition Recipes
Sign up for this tool


About

This open-load system is dedicated to PECVD of SiO2, SiNx, SiOxNy, and a-Si using Silane (2%SiH4, 98% He), N2O, NH3, and N2 gases. The sample electrode has a 270mm diameter useable area, allowing for multiple 4” wafer depositions in a single run. Standard operating temperature is 300C, but can be user changed for temps ranging anywhere from 250 to 350C. The system is equipped with a dual generator, dual frequency option for growth of low-stress Nitride films.

See Also

Documentation

Recipes & Historical Data