Oxford ICP Etcher - Process Control Data
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Data - InP Ridge Etch (Oxford ICP Etcher)
PECVD SiO2 hardmask, patterned on Stepper #2 (AutoStep 200) & Panasonic ICP #1
InP Ridge Etch: 60°C, 3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min00sec (300sec)
Silicon carrier, no adhesive. Sample Size: 1x1cm, ~30-40% SiO2 masking (NingC's pattern) | |||||
Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (InP/SiO2) | Comments | SEM Images |
1/26/22 | NiravP |
Dependence on Sample Size
We have found that the size of the InP piece loaded (no adhesive, onto Silicon carrier wafer) affects the etch rate, but does not affect the etch profile - ie. etches are still smooth and vertical, but rate varies with sample area.
InP Ridge Etch: 60°C, 3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min05sec (305sec) | |||||||
Date | Sample# | Sample Size (dimensions, mm) | Sample Size (area, mm2) | Etch Rate (nm/min) | Etch Selectivity (InP/SiO2) | Comments | SEM Images |
1/11/22 | DJ_InPRidge | 4.5 x 2.5 | 11.25 | 0.602 | 64.6nm left | [1] | |
1/12/22 | DJ_InPRidge | 4.5 x 3 | 13.5 | 0.563 | 76.4nm left | [2] | |
1/12/22 | DJ_InP#3 | 4.5 x 3 | 13.5 | 0.612 | 71nm left | [3] | |
1/26/22 | NiravP | 10 x 10 | 100 | ||||
1/26/22 | NiravP | 1/4 of 50mm wafer | 490 |