Difference between revisions of "Oxford ICP Etcher - Process Control Data"

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m (updated images)
m (updated etch rates and selectivity)
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|1/26/22
 
|1/26/22
 
|<small>NP_1_26_001</small>
 
|<small>NP_1_26_001</small>
|374
+
|~400nm
|
+
|240 nm left
|
+
|~30-40% SiO<sub>2</sub> masking (NingC's pattern)
 
|[https://wiki.nanotech.ucsb.edu/w/images/d/dc/Oxford_Cal_1_26_22_001_45D_005.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/87/Oxford_Cal_1_26_22_001_CS_004.jpg <nowiki>[2]</nowiki>]
 
|[https://wiki.nanotech.ucsb.edu/w/images/d/dc/Oxford_Cal_1_26_22_001_45D_005.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/87/Oxford_Cal_1_26_22_001_CS_004.jpg <nowiki>[2]</nowiki>]
 
|-
 
|-
 
|1/26/22
 
|1/26/22
 
|NP_1_26_003
 
|NP_1_26_003
|362
+
|452
|
+
|260-280nm left
|Better images will taken soon
+
|~30-40% SiO<sub>2</sub> masking (NingC's pattern)
 
|[https://wiki.nanotech.ucsb.edu/w/images/e/ef/Oxford_Cal_01_26_22_003New_45d_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/4/40/Oxford_Cal_01_26_22_031New_CS_001.jpg <nowiki>[2]</nowiki>]
 
|[https://wiki.nanotech.ucsb.edu/w/images/e/ef/Oxford_Cal_01_26_22_003New_45d_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/4/40/Oxford_Cal_01_26_22_031New_CS_001.jpg <nowiki>[2]</nowiki>]
 
|}
 
|}
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|Sample Size (dimensions, mm)
 
|Sample Size (dimensions, mm)
 
|Sample Size (area, mm<sup>2</sup>)
 
|Sample Size (area, mm<sup>2</sup>)
|Etch  Rate (um/min)
+
|Etch  Rate (nm/min)
 
|Etch  Selectivity (InP/SiO2)
 
|Etch  Selectivity (InP/SiO2)
 
|Comments
 
|Comments
Line 46: Line 46:
 
|4.5 x 2.5
 
|4.5 x 2.5
 
|11.25
 
|11.25
|0.602
+
|602
 
|64.6nm left
 
|64.6nm left
 
|<small>~50% SiO<sub>2</sub> masking (GCA Calibration pattern)</small>
 
|<small>~50% SiO<sub>2</sub> masking (GCA Calibration pattern)</small>
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|4.5 x 3
 
|4.5 x 3
 
|13.5
 
|13.5
|0.563
+
|563
 
|76.4nm left
 
|76.4nm left
 
|<small>~50% SiO<sub>2</sub> masking (GCA Calibration pattern)</small>
 
|<small>~50% SiO<sub>2</sub> masking (GCA Calibration pattern)</small>
Line 64: Line 64:
 
|4.5 x 3
 
|4.5 x 3
 
|13.5
 
|13.5
|0.612
+
|612
 
|71nm left
 
|71nm left
 
|<small>~50% SiO<sub>2</sub> masking (GCA Calibration pattern)</small>
 
|<small>~50% SiO<sub>2</sub> masking (GCA Calibration pattern)</small>
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|10 x 10
 
|10 x 10
 
|100
 
|100
|
+
|400-450
|
+
|~250nm left
 
|<small>~30-40% SiO<sub>2</sub> masking (NingC's pattern)</small>
 
|<small>~30-40% SiO<sub>2</sub> masking (NingC's pattern)</small>
 
|
 
|
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|1/4 of 50mm wafer
 
|1/4 of 50mm wafer
 
|490
 
|490
|0.428-0.46
+
|48028-0.46
|428nm left
+
|276nm left
 
|<small>~30-40% SiO<sub>2</sub> masking (NingC's pattern)</small>
 
|<small>~30-40% SiO<sub>2</sub> masking (NingC's pattern)</small>
 
|[https://wiki.nanotech.ucsb.edu/w/images/9/94/Oxford_Etch_InP_Cal_SEM_-_quarter_wafer_-_CS_005.jpg <nowiki>[1]</nowiki>]
 
|[https://wiki.nanotech.ucsb.edu/w/images/9/94/Oxford_Etch_InP_Cal_SEM_-_quarter_wafer_-_CS_005.jpg <nowiki>[1]</nowiki>]
 
|}
 
|}

Revision as of 08:31, 15 February 2022

Data - InP Ridge Etch (Oxford ICP Etcher)

PECVD SiO2 hardmask, patterned on Stepper #2 (AutoStep 200) & Panasonic ICP #1

InP Ridge Etch: 60°C, 3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min00sec (300sec)

Sample Size: 1x1cm, ~30-40% SiO2 masking (NingC's pattern). Silicon carrier, no adhesive.

Date Sample# Etch Rate (nm/min) Etch Selectivity (InP/SiO2) Comments SEM Images
1/26/22 NP_1_26_001 ~400nm 240 nm left ~30-40% SiO2 masking (NingC's pattern) [1] [2]
1/26/22 NP_1_26_003 452 260-280nm left ~30-40% SiO2 masking (NingC's pattern) [1] [2]

Dependence on Sample Size

We have found that the size of the InP piece loaded (no adhesive, onto Silicon carrier wafer) affects the etch rate, but does not affect the etch profile - ie. etches are still smooth and vertical, but rate varies with sample area.

InP Ridge Etch: 60°C, 3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min05sec (305sec)

Silicon carrier, no adhesive.

Date Sample# Sample Size (dimensions, mm) Sample Size (area, mm2) Etch Rate (nm/min) Etch Selectivity (InP/SiO2) Comments SEM Images
1/11/22 DJ_InPRidge 4.5 x 2.5 11.25 602 64.6nm left ~50% SiO2 masking (GCA Calibration pattern) [1]
1/12/22 DJ_InPRidge 4.5 x 3 13.5 563 76.4nm left ~50% SiO2 masking (GCA Calibration pattern) [2]
1/12/22 DJ_InP#3 4.5 x 3 13.5 612 71nm left ~50% SiO2 masking (GCA Calibration pattern) [3]
1/26/22 NP_? 10 x 10 100 400-450 ~250nm left ~30-40% SiO2 masking (NingC's pattern)
1/26/22 NP_? 1/4 of 50mm wafer 490 48028-0.46 276nm left ~30-40% SiO2 masking (NingC's pattern) [1]