Difference between revisions of "Oxford ICP Etcher (PlasmaPro 100 Cobra)"

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{{tool|{{PAGENAME}}
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{{tool2|{{PAGENAME}}
 
|picture=OxfordPlasmaPro.jpg
 
|picture=OxfordPlasmaPro.jpg
 
|type = Dry Etch
 
|type = Dry Etch
 
|super= Tony Bosch
 
|super= Tony Bosch
 +
|super2= Bill Millerski
 
|location=Bay 2
 
|location=Bay 2
 
|description = ICP Etches for III-V/ALE
 
|description = ICP Etches for III-V/ALE
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*Allowed Materials:
 
*Allowed Materials:
 
**InP-based epitaxies - ''qualified and ready''
 
**InP-based epitaxies - ''qualified and ready''
**GaAs-baased epitaxies - ''discuss with staff''
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**GaAs-baased epitaxies - ''starter recipe is available''
**GaN-based epitaxies - ''discuss with staff''
+
**GaN-based epitaxies - ''starter recipe is available''
**GaSb-based epitaxies - ''discuss with staff''
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**GaSb-based epitaxies - ''starter recipe is available''
**Atomic Layer Etching on select materials - ''discuss with staff''
+
**Atomic Layer Etching on select materials - ''starter recipe is available''
 
*Standard masking materials include:
 
*Standard masking materials include:
 
**SiO<sub>2</sub>
 
**SiO<sub>2</sub>
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==Documentation==
 
==Documentation==
  
*{{file|Oxford Plasma Pro Cobra 300 Operating Instructions.docx|Oxford PlasmaPro Operating Instructions}}
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*{{file|Oxford_Cobra_300_SOP_v2021-12-14.pdf|Oxford PlasmaPro Operating Instructions|}}
 
*[[Laser Etch Monitoring|Laser Etch Monitoring procedures]]
 
*[[Laser Etch Monitoring|Laser Etch Monitoring procedures]]
 
*Online Training Video:
 
*Online Training Video:
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*'''[[ICP Etching Recipes#Oxford ICP Etcher .28PlasmaPro 100 Cobra.29|Oxford PlasmaPro Recipes]]''' - Recipes specific to this tool.
 
*'''[[ICP Etching Recipes#Oxford ICP Etcher .28PlasmaPro 100 Cobra.29|Oxford PlasmaPro Recipes]]''' - Recipes specific to this tool.
 +
*[[ICP Etching Recipes#Process Control Data .28Oxford ICP Etcher.29|Process Control Data]] - Calibration etch data for verifying tool performance over time
 
*All [[Dry Etching Recipes]] - use this list to see other options for dry etching various materials.
 
*All [[Dry Etching Recipes]] - use this list to see other options for dry etching various materials.

Latest revision as of 10:47, 30 August 2022

Oxford ICP Etcher (PlasmaPro 100 Cobra)
OxfordPlasmaPro.jpg
Location Bay 2
Tool Type Dry Etch
Manufacturer Oxford Instruments
Model PlasmaPro 100 Cobra 300
Description ICP Etches for III-V/ALE

Primary Supervisor Tony Bosch
(805) 893-3486
bosch@ece.ucsb.edu

Secondary Supervisor

Bill Millerski


Materials InP, GaAs, GaN, Silicon ALE
Recipes Dry Etch Recipes


About

The Oxford PlasmaPro 100 Cobra 300 is intended for etching InP-based, GaAs-baased and GaN-based epitaxies, in addition to Atomic Layer Etching (ALE) processes. The system has a load lock, wide temperature range with rapid heating/cooling, Inductively Coupled Plasma (ICP) coil and a capactively coupled substrate HF (13.56MHz) The fixturing is configured for 4" diameter Si wafers and uses a clamp to hold the sample on the RF chuck. Small pieces may be placed on Silicon carrier wafers, with or without mounting adhesive. Helium back-side cooling is used to keep the sample cool during the etch, but pieces do heat up when placed on carriers.

The in-situ laser monitor installed on this system allows for repeatable etches and endpoint detection via continuous optical monitoring of the wafer reflectivity in a user-determined location, through a porthole on the chamber. The system also has an in situ optical emission monitor for plasma spectroscopy, utilized for chamber clean endpoint detection.

Detailed Specifications

  • Temperature Range: –150°C to +400°C
  • Gases Available: CH4, H2, Ar, Cl2, BCl3, SF6, SiCl4, O2, N2
  • ICP Power (max): 3000 W
  • RF Power (max): 600 W
  • He-back-side cooling
  • 100mm wafer held down with ceramic clamp., single-load
    • Users may place pieces onto carrier wafer with or without adhesive. Standard recipes use no adhesive.
    • Pieces must be >7mm from edge of carrier to avoid wafer-clamping mechanism.
  • Windows-based Cortex software control of process and wafer handling
  • Allowed Materials:
    • InP-based epitaxies - qualified and ready
    • GaAs-baased epitaxies - starter recipe is available
    • GaN-based epitaxies - starter recipe is available
    • GaSb-based epitaxies - starter recipe is available
    • Atomic Layer Etching on select materials - starter recipe is available
  • Standard masking materials include:
    • SiO2
    • Si3N4
    • photoresist (at << 100°C).

Other materials can be exposed to the chamber only with staff approval.

  • Laser monitoring with camera and etch simulation software: Intellemetrics LEP 500
  • Optical Emission Spectroscopy (Ocean Optics) for endpoint detection of chamber cleans & etches - integrated into Oxford software

Documentation

Recipes