Old Deposition Data - NastaziaM 2021-11-22

Back to Vacuum Deposition Recipes.

Contents

• 1 PECVD 1 (PlasmaTherm 790)
  • 1.1 Historical Particulate Data
  • 1.2 SiN deposition (PECVD #1)
    • 1.2.1 Historical Data
      • 1.2.1.1 Thin-Film Properties
      • 1.2.1.2 Uniformity Data
  • 1.3 SiO₂ deposition (PECVD #1)
    • 1.3.1 Historical Data
      • 1.3.1.1 Thin-Film Properties
      • 1.3.1.2 Thick-Film Properties
    • 1.3.2 Uniformity Data
  • 1.4 Low-Stress SiN - LS-SiN (PECVD#1)
  • 1.5 SiO_xN_y deposition (PECVD #1)
  • 1.6 Cleaning Recipes (PECVD #1)
    • 1.6.1 Standard Cleaning Recipe: "CF4/O2 Clean"
• 2 PECVD 2 (Advanced Vacuum)
  • 2.1 Historical Particulate Data
  • 2.2 SiO₂ deposition (PECVD #2)
    • 2.2.1 Standard Recipe
    • 2.2.2 Historical Data
      • 2.2.2.1 Thin-Film Properties
      • 2.2.2.2 Thin-Film Properties
      • 2.2.2.3 Uniformity Data
  • 2.3 SiN deposition (PECVD #2)
    • 2.3.1 Standard Recipe
    • 2.3.2 Historical Data
      • 2.3.2.1 Thin-Film Properties
      • 2.3.2.2 Uniformity Data
  • 2.4 Low-Stress SiN deposition (PECVD #2)
    • 2.4.1 Standard Recipe
    • 2.4.2 Historical Data
      • 2.4.2.1 Thin-Film Properties
      • 2.4.2.2 Uniformity Data
  • 2.5 Amorphous-Si deposition (PECVD #2)
  • 2.6 Cleaning Recipes (PECVD #2)
    • 2.6.1 Cleaning Procedure (PECVD#2)
    • 2.6.2 Standard Clean Recipe: "STD CF4/O2 Clean recipe"
    • 2.6.3 Clean Times (PECVD#2)
• 3 ICP-PECVD (Unaxis VLR)
  • 3.1 Historical Particulate Data
  • 3.2 Standard Recipes
  • 3.3 SiO2 LDR 250C Deposition (Unaxis VLR)
    • 3.3.1 Historical Data
      • 3.3.1.1 Thin-Film Properties
      • 3.3.1.2 Uniformity Data
  • 3.4 SiO2 HDR 250C Deposition (Unaxis VLR)
    • 3.4.1 Historical Data
      • 3.4.1.1 Thin-Film Properties
      • 3.4.1.2 Uniformity Data
  • 3.5 SiN 250C deposition (Unaxis VLR)
    • 3.5.1 Historical Data
      • 3.5.1.1 Thin-Film Properties
      • 3.5.1.2 Uniformity Data
  • 3.6 SiN LS 250C Deposition (Unaxis VLR)
    • 3.6.1 Historical Data
      • 3.6.1.1 Thin-Film Properties
      • 3.6.1.2 Uniformity Data
  • 3.7 Cleaning Recipes (Unaxis VLR Dep)

PECVD 1 (PlasmaTherm 790)

Historical Particulate Data

• Particulates(Gain4) in PECVD#1-OLD DATA 2015
• Particulates(Gain4) in PECVD#1-OLD DATA 2016
• Particulates(Gain4) in PECVD#1-OLD DATA 2017
• Particulates in PECVD#1 films 2017
• Particulates in PECVD#1 films 2018
• Particulates in PECVD#1 films 2019
• Particulates in PECVD#1 films 2020
• Particulates in PECVD#1 films 2021

SiN deposition (PECVD #1)

• Si3N4 Standard Recipe

Historical Data

Thin-Film Properties

• SiN 100nm Data 2014
• SiN 100nm Data 2015
• SiN 100nm Data 2016
• SiN 100nm Data 2017
• SiN 300nm Data 2017
• SiN 300nm Data 2018
• SiN 300nm Data 2019
• SiN 300nm Data 2020
• SiN 300nm Data 2021

Uniformity Data

• SiN 100 nm Thickness uniformity 2014
• SiN 100 nm Thickness uniformity 2015
• SiN 100 nm Thickness uniformity 2016
• SiN 100 nm Thickness uniformity 2017
• SiN 300nm Thickness uniformity 2017
• SiN 300nm Thickness uniformity 2018
• SiN 300nm Thickness uniformity 2019
• SiN 300nm Thickness uniformity 2020
• SiN 300nm Thickness uniformity 2021

SiO₂ deposition (PECVD #1)

• SiO2 Standard Recipe

Historical Data

Thin-Film Properties

• SiO₂ 100nm Data 2014
• SiO₂ 100nm Data 2015
• SiO₂ 100nm Data 2016
• SiO₂ 100nm Data 2017
• SiO₂ 300nm Data 2017
• SiO₂ 300nm Data 2018
• SiO₂ 300nm Data 2019
• SiO₂ 300nm Data 2020
• SiO₂ 300nm Data 2021

Thick-Film Properties

• SiO₂ Thick film Data 2021

Uniformity Data

• SiO₂ 100nm Thickness uniformity 2014
• SiO₂ 100 nm Thickness uniformity 2015
• SiO₂ 100 nmThickness uniformity 2016
• SiO₂ 100nm Thickness uniformity 2017
• SiO₂ 300nm Thickness uniformity 2017
• SiO₂ 300nm Thickness uniformity 2018
• SiO₂ 300nm Thickness uniformity 2019
• SiO₂ 300nm Thickness uniformity 2020
• SiO₂ 300nm Thickness uniformity 2021

Low-Stress SiN - LS-SiN (PECVD#1)

• LS SiN Standard Recipe
• LS SiN Data 2014
• LS SiN 1000A Thickness uniformity 2014

SiO_xN_y deposition (PECVD #1)

• SiO_xN_y Standard Recipe
• SiO_xN_y Data 2014
• SiO_xN_y1000A Thickness uniformity 2014

Cleaning Recipes (PECVD #1)

The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

1. Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
2. Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.

Standard Cleaning Recipe: "CF4/O2 Clean"

Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

PECVD 2 (Advanced Vacuum)

Historical Particulate Data

• Particulates (Gain4) in PECVD#2 2015
• Particulates (Gain4) in PECVD#2 2016
• Particulates (Gain4) in PECVD#2 2017

• Particulates in PECVD#2 films 2017
• Particulates in PECVD#2 films 2018
• Particulates in PECVD#2 films 2019
• Particulates in PECVD#2 films 2020
• Particulates in PECVD#2 films 2021

SiO₂ deposition (PECVD #2)

Standard Recipe

• STD SiO2 Recipe

Historical Data

Thin-Film Properties

• Oxide Data 2014
• Oxide Data 2015
• Oxide data 2016
• Oxide Data 2017
• Oxide Data 2018
• Oxide Data 2019
• Oxide Data 2020
• Oxide Data 2021

Thin-Film Properties

• Thick Oxide Data 2021

Uniformity Data

• Oxide Thickness Uniformity 2014
• Oxide Thickness Uniformity 2015
• Oxide Thickness Uniformity 2016
• Oxide Thickness Uniformity 2017
• Oxide Thickness Uniformity 2018
• Oxide Thickness Uniformity 2019
• Oxide Thickness Uniformity 2020
• Oxide Thickness Uniformity 2021

SiN deposition (PECVD #2)

Standard Recipe

• SiNx Film Stress vs LF and HF Duration Time, and Gas Flowing-rate
• STD Nitride2 Recipe

Historical Data

Thin-Film Properties

• Nitride2 Data 2014
• Nitride2 Data 2015
• Nitride2 Data 2016
• Nitride2 Data 2017
• Nitride2 Data 2018
• Nitride2 Data 2019
• Nitride2 Data 2020
• Nitride2 Data 2021

Uniformity Data

• Nitride2 Thickness Uniformity 2014
• Nitride2 Thickness Uniformity 2015
• Nitride2 Thickness Uniformity 2016
• Nitride2 Thickness Uniformity 2017
• Nitride2 Thickness Uniformity 2018
• Nitride2 Thickness Uniformity 2019
• Nitride2 Thickness Uniformity 2020
• Nitride2 Thickness Uniformity 2021

Low-Stress SiN deposition (PECVD #2)

Low-Stress SilIcon Nitride (< 100 MPa)

Standard Recipe

• STD LS Nitride2 Recipe
• Old Versions:
  • LS Nitride2 Standard Recipe 2014-5/9/2018
  • STD LSNitride2 5/9/2018

Historical Data

Thin-Film Properties

• LS Nitride2 Data 2014
• LS Nitride2 Data 2015
• LS Nitride2 Data 2016
• LS Nitride2 Data 2017
• LS Nitride2 Data 2018
• LS Nitride2 Data 2019
• LS Nitride2 Data 2020
• LS Nitride2 Data 2021

Uniformity Data

• LS Nitride2 Thickness Uniformity 2014
• LS Nitride2 Thickness Uniformity 2015
• LS Nitride2 Thickness Uniformity 2016
• LS Nitride2 Thickness Uniformity 2017
• LS Nitride2 Thickness Uniformity 2018
• LS Nitride2 Thickness Uniformity 2019
• LS Nitride2 Thickness Uniformity 2020
• LS Nitride2 Thickness Uniformity 2021

Amorphous-Si deposition (PECVD #2)

• Amorphous Si Deposition Recipe
• Amorphous Si Films and Their Stress

Cleaning Recipes (PECVD #2)

Cleaning Procedure (PECVD#2)

The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

1. (If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again.
2. Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.

Standard Clean Recipe: "STD CF4/O2 Clean recipe"

Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

Clean Times (PECVD#2)

Film Deposited	Cleaning Time (Dry)
SiO2	1 min. clean for every 1 min. deposition
Si3N4	1 min. clean for every 7 min of deposition
If > 29min total dep time (Season + Dep)	Wet Clean the Upper Lid/Chamber DI water then Isopropyl Alcohol on chamber wall & portholes

ICP-PECVD (Unaxis VLR)

2020-02: New recipes have been characterized for low particulate count and repeatability.  Only staff-supplied recipes are allowed in the tool. Please follow the new procedures to ensure low particle counts in the chamber.

The system currently has Deuterated Silane (SiD4) installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights.

Historical Particulate Data

• Particulates in Unaxis films @250C-2019
• Particulates in Unaxis films @250C-2020

Standard Recipes

• SiO2 LDR 250C Recipe-2020
• SiO2 HDR 250C Recipe-2020
• SiN 250C Recipe-2020
• SiN LS 250C Recipe-2020

SiO2 LDR 250C Deposition (Unaxis VLR)

Low-Deposition Rate SiO₂

Historical Data

Thin-Film Properties

This data is for 780sec long SiO2 LDR (low deposition rate) deposition, and cleaning time is 900sec, following the procedure here.

• SiO2 LDR 250C 300nm Data-2019
• SiO2 LDR 250C 300nm Data-2020

Uniformity Data

• Thickness Uniformity SiO2 LDR 250C 300nm-2019
• Thickness Uniformity SiO2 LDR 250C 300nm-2020

SiO2 HDR 250C Deposition (Unaxis VLR)

High-Deposition Rate SiO₂

Historical Data

Thin-Film Properties

This data is for 180sec long SiO2 HDR ( high deposition rate) deposition, and cleaning time is 900sec, following the procedure here.

• SiO2 HDR 250C 300nm Data-2019
• SiO2 HDR 250C 300nm Data-2020

Uniformity Data

• Thickness Uniformity SiO2 HDR 250C 300nm-2019
• Thickness Uniformity SiO2 HDR 250C 300nm-2020

SiN 250C deposition (Unaxis VLR)

Historical Data

Thin-Film Properties

This data is for 480sec long SiN deposition, and cleaning time is 1500sec, following the procedure here.

• SiN 250C 300nm Data-2020

Uniformity Data

• Thickness Uniformity SiN 250C 300nm-2020

SiN LS 250C Deposition (Unaxis VLR)

Low Stress Silicon-Nitride

Historical Data

To Be Added

Thin-Film Properties

This data is for 180sec long SiN LS (low stress) deposition, and cleaning time is 1500sec, following the procedure here.

• SiN LS 250C 300nm Data-2020

Uniformity Data

• Thickness Uniformity SiN LS 250C 300nm-2020

Cleaning Recipes (Unaxis VLR Dep)

You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the Operating Procedure on the Unaxis Tool Page for details.

• SiNx etches at 20nm/min
• SiO2 etches at 40nm/min

Ion Beam Deposition (Veeco NEXUS)

• IBD Calibrations Spreadsheet - Records of historical film depositions (rates, indices), Uniformity etc.
  • All users are required to enter their calibration deps (simple test deps only)
• Particulates in SiO2 and Ta2O5 in 2015

SiO₂ deposition (IBD)

SiO₂ Historical Data

• SiO₂ Standard Recipe
• SiO₂ Data December 2014
• SiO₂ Thickness uniformity 2014
• SiO₂ Data-15min depositions 2015
• SiO₂ Thickness uniformity-15 min depositions 2015
• SiO₂ Data-1hr depositions 2015
• SiO₂ Thickness uniformity-1hr depositions 2015
• SiO₂ Data-1hr depositions 2016
• SiO₂ Thickness uniformity-1hr depositions 2016

SiO₂ 1hr deposition properties:

• Dep.rate: ≈ 5.2 nm/min (users must calibrate this prior to critical deps)
• HF e.r.~350 nm/min
• Stress ≈ -390MPa (compressive)
• Refractive Index: ≈ 1.494
• [Cauchy Parameters] (350-2000nm):
  • A = 1.480
  • B = 0.00498
  • C = -3.2606e-5

Si₃N₄ deposition (IBD)

• Si₃N₄ Standard Recipe
• Si₃N₄ Data December 2014
• Si₃N₄ Thickness uniformity 2014

• Deposition Rate: ≈ 4.10 nm/min (users must calibrate this prior to critical deps)
• HF e.r.~11nm/min
• Stress ≈ -1590MPa (compressive)
• Refractive Index: ≈ 1.969
• [Cauchy Parameters] (350-2000nm):
  • A = 2.000
  • B = 0.01974
  • C = 1.2478e-4

SiO_xN_y deposition (IBD)

These are some old (2010), initial characterizations only. A recipe improvement would be to increase the Assist O2+N2 = 60sccm total, increasing repeatability. Contact Demis for more info.

IBD SiOxNy: Refractive Index vs. O2/N2 Flow.

Dep. Rate of IBD SiOxNy vs. Assist O2 flow.

Ta₂O₅ deposition (IBD)

Ta2O5 Historical Data (IBD)

• Ta₂O₅ Standard Recipe
• Ta₂O₅ Data December 2014
• Ta₂O₅ Thickness uniformity 2014

• Ta₂O₅ Data December-15 min depositions 2015
• Ta₂O₅ Thickness uniformity-15 min depositions 2015
• Ta₂O₅ Data December-1hr depositions 2015
• Ta₂O₅ Thickness uniformity-1hr depositions 2015
• Ta₂O₅ Data December-1hr depositions 2016
• Ta₂O₅ Thickness uniformity-1hr depositions 2016

Ta2O5 Deposition/Film Properies (IBD)

• Ta2O5 1hr depositions:
• Deposition Rate: ≈ 7.8 nm/min (users must calibrate this prior to critical deps)
• HF e.r.~2 nm/min
• Stress ≈ -232MPa (compressive)
• Refractive Index: ≈ 2.172
• [Cauchy Parameters] (350-2000nm):
  • A = 2.1123
  • B = 0.018901
  • C = -0.016222

TiO₂ deposition (IBD)

• TiO₂ Standard Recipe
• TiO₂ Data December 2014
• TiO₂ Thickness uniformity 2014

• Deposition Rate: ≈ 1.29 nm/min (users must calibrate this prior to critical deps)
• HF etch rate ~5.34nm/min
• Stress ≈ -445MPa (compressive)
• Refractive Index: ≈ 2.259
• [Cauchy Parameters] (350-2000nm):
  • A = 2.435
  • B = -4.9045e-4
  • C = 0.01309
• Absorbing < ~350nm

Al₂O₃ deposition (IBD)

• Al2O3 standard recipe: 1_Al2O3_dep

• Al2O3 Data 2018
• Al2O3 Thickness uniformity 2018

• Deposition Rate: ≈ 2.05nm/min (users must calibrate this prior to critical deps)
• HF etch rate ~167nm/min
• Stress ≈ -332MPa (compressive)
• Refractive Index: ≈ 1.656
• [Cauchy Parameters] (350-2000nm):( working on)
  • A =
  • B =
  • C =
• Absorbing < ~350nm

Reference Recipes (Disabled Tools)

Sputter 2 (SFI Endeavor)

This Tool has been Disabled, and is not available for use any more! These recipes are displayed here for historical/reference purposes only.

Al Deposition (Sputter 2)

• Al Deposition Recipe

AlN_x Deposition (Sputter 2)

• AlN_x Deposition Recipe

Au Deposition (Sputter 2)

• Au Deposition Recipe

TiO₂ Deposition (Sputter 2)

• TiO2₂ Deposition Recipe