Focused Ion-Beam Lithography (Raith Velion)

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Work In Progress

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Focused Ion-Beam Lithography (Raith Velion)
RaithVelion.jpg
Tool Type Lithography
Location Bay 1
Supervisor Dan Read
Supervisor Phone (805) 893-3138
Supervisor E-Mail dread@ucsb.edu
Description Focused Ion Beam Lithography
Manufacturer Raith Gmbh
Model Velion


About

The Raith Velion ion beam tool was installed at UCSB in 2020 and signed off and avaiable for. use in early 2021.

Detailed Specifications

nanoFIB column:

  • Liquid Metal Alloy Ion Sources (LMAIS) providing ions for Gallium-free patterning (Au, Si)
  • High resolution patterning capabilities (minimum feature size < 15nm)
  • Fully corrected write fields (distortion, stigmation)
  • Long term current stability (days)

Laser Interferometer stage:

  • Mechanical movement at 1nm precision
  • Continuous stage modes for stitch free FIB patterning on full 4”wafer scale
  • Stitching and overlay accuracy:  < 50 nm ( mean+3 sigma)

FE SEM

  • Process control for rapid prototyping

Additional Capabilities:  

  • Automated height sensing to detect sample surface height variation for automated correction
  • Pt Gas Iinjection System (GIS) deposition
  • Raith Nanosuite software incl. CAD (GDSII) navigation & patterning

Recipes