Difference between revisions of "Atomic Layer Deposition Recipes"

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(→‎Al O  deposition (ALD CHAMBER 3): converted to regular subscripts, indented each recipe param)
Line 36: Line 36:
  
 
*Recipe name: '''''Ch3_TMA+H2O-300C'''''
 
*Recipe name: '''''Ch3_TMA+H2O-300C'''''
*Al<sub>2</sub>O<sub>3</sub> deposition rate ~ 1A/cyc
+
**Al<sub>2</sub>O<sub>3</sub> deposition rate ~ 1A/cyc
 +
*Recipe Name: CH3_TMA+H2O-XYZ?
 +
**TBD
  
 
===AlN deposition (ALD CHAMBER 3)===
 
===AlN deposition (ALD CHAMBER 3)===
 
*Recipe name: '''''Ch3_TMA+100W/20N*-300C'''''
 
*Recipe name: '''''Ch3_TMA+100W/20N*-300C'''''
*AlN deposition rate ~ t.b.d.
+
**AlN deposition rate ~ t.b.d.
*recipe utilizes a N* plasma @ 100W, 20mTorr pressure.
+
**Recipe utilizes a N* plasma @ 100W, 20mTorr pressure.
  
 
===HfO{{sub|2}} deposition (ALD CHAMBER 3)===
 
===HfO{{sub|2}} deposition (ALD CHAMBER 3)===
 
*Recipe name: '''''Ch3_TEMAH+H2O-300C'''''
 
*Recipe name: '''''Ch3_TEMAH+H2O-300C'''''
*HfO<sub>2</sub> deposition rate ~ 0.9-1.0A/cyc
+
**HfO<sub>2</sub> deposition rate ~ 0.9-1.0A/cyc
*Note: deposition shows significant parasitic growth (via CVD channel) if H<sub>2</sub>O purge/pump times are not sufficient.
+
**Note: deposition shows significant parasitic growth (via CVD channel) if H<sub>2</sub>O purge/pump times are not sufficient.
  
 
===SiO{{sub|2}} deposition (ALD CHAMBER 3)===
 
===SiO{{sub|2}} deposition (ALD CHAMBER 3)===
 
*Recipe name: '''''Ch3_TDMAS+250W/O*-300C'''''
 
*Recipe name: '''''Ch3_TDMAS+250W/O*-300C'''''
*SiO<sub>2</sub> deposition rate ~ 0.7-0.8A/cyc
+
**SiO<sub>2</sub> deposition rate ~ 0.7-0.8A/cyc
*recipe utilizes an O* plasma @ 250W, 5mTorr pressure
+
**Recipe utilizes an O* plasma @ 250W, 5mTorr pressure
  
 
===ZrO{{sub|2}} deposition (ALD CHAMBER 3)===
 
===ZrO{{sub|2}} deposition (ALD CHAMBER 3)===
 
*Recipe name: '''''Ch3_TEMAZ+H2O-300C'''''
 
*Recipe name: '''''Ch3_TEMAZ+H2O-300C'''''
*ZrO<sub>2</sub> deposition rate ~ 0.9-1.0A/cyc
+
**ZrO<sub>2</sub> deposition rate ~ 0.9-1.0A/cyc
*not directly characterized since results are basically the same as the HfO<sub>2</sub> process above.
+
**Not directly characterized since results are basically the same as the HfO<sub>2</sub> process above.
  
 
===TiO{{sub|2}} deposition (ALD CHAMBER 3)===
 
===TiO{{sub|2}} deposition (ALD CHAMBER 3)===
 
*Recipe name: '''''Ch3_TDMAT+H2O-300C'''''
 
*Recipe name: '''''Ch3_TDMAT+H2O-300C'''''
*TiO{{sub|2}} deposition rate ~ 0.6A/cyc
+
**TiO<sub>2</sub> deposition rate ~ 0.6A/cyc
*Note: deposition shows parasitic growth (via CVD channel) if H<sub>2</sub>O purge/pump times are not sufficient.
+
**Note: deposition shows parasitic growth (via CVD channel) if H<sub>2</sub>O purge/pump times are not sufficient.
  
 
===TiN deposition (ALD CHAMBER 3)===
 
===TiN deposition (ALD CHAMBER 3)===
 
*Recipe name: '''''Ch3_TDMAT+N*/H*-300C'''''
 
*Recipe name: '''''Ch3_TDMAT+N*/H*-300C'''''
*TiN deposition rate ~ 0.7A/cyc
+
**TiN deposition rate ~ 0.7A/cyc
*Conductivity data: (to be added soon)
+
**Conductivity data: (to be added)

Revision as of 16:33, 16 October 2018

Back to Vacuum Deposition Recipes.

Atomic Layer Deposition (Oxford FlexAL)

Oxford FlexAL Chamber #1: Metals

Pt deposition (ALD CHAMBER 1)

  • Recipe name: Ch1_TMCpPt+O3-300C
  • Pt deposition rate ~ 0.5-0.6A/cyc
  • recipe utilizes the ozone generator which must be first set to the following conditions:
    • O2 flow = 250sccm
    • O3 concentration = 15 wt%
  • Conductivity data: (to be added)

Ru deposition (ALD CHAMBER 1)

  • Recipe name: Ch1_Ex03Ru[HPbub]+O2-300C
  • Ru deposition rate ~ 0.6-0.7A/cyc.
  • Conductivity data: (to be added)

ZnO Deposition (ALD Chamber 1)

Conductive film.

  • Recipe name: Ch1_DEZ+H2O-200C
  • ZnO deposition rate ≈ TBA
  • resistivity ≈ TBA

ZnO:Al deposition (ALD CHAMBER 1)

Al-Doped ZnO for variable resisitivity.

  • Recipe name: Ch1_DEZ/TMA+H2O-200C
    • The recipe has TWO loops. The Outer loop determines final thickness. The Inner loop determines how much AlOx is doped into the film. Note that each full (outer-loop) cycle takes a long time due to this double-loop structure.
  • Al dose fraction = 5% for lowest resistivity
  • ZnO deposition rate ~ 1.7A/cyc
  • resistivity ~ 4200uOhm.cm (390A film)

Oxford FlexAL Chamber #3: Dielectrics

Al2O3 deposition (ALD CHAMBER 3)

  • Recipe name: Ch3_TMA+H2O-300C
    • Al2O3 deposition rate ~ 1A/cyc
  • Recipe Name: CH3_TMA+H2O-XYZ?
    • TBD

AlN deposition (ALD CHAMBER 3)

  • Recipe name: Ch3_TMA+100W/20N*-300C
    • AlN deposition rate ~ t.b.d.
    • Recipe utilizes a N* plasma @ 100W, 20mTorr pressure.

HfO2 deposition (ALD CHAMBER 3)

  • Recipe name: Ch3_TEMAH+H2O-300C
    • HfO2 deposition rate ~ 0.9-1.0A/cyc
    • Note: deposition shows significant parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.

SiO2 deposition (ALD CHAMBER 3)

  • Recipe name: Ch3_TDMAS+250W/O*-300C
    • SiO2 deposition rate ~ 0.7-0.8A/cyc
    • Recipe utilizes an O* plasma @ 250W, 5mTorr pressure

ZrO2 deposition (ALD CHAMBER 3)

  • Recipe name: Ch3_TEMAZ+H2O-300C
    • ZrO2 deposition rate ~ 0.9-1.0A/cyc
    • Not directly characterized since results are basically the same as the HfO2 process above.

TiO2 deposition (ALD CHAMBER 3)

  • Recipe name: Ch3_TDMAT+H2O-300C
    • TiO2 deposition rate ~ 0.6A/cyc
    • Note: deposition shows parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.

TiN deposition (ALD CHAMBER 3)

  • Recipe name: Ch3_TDMAT+N*/H*-300C
    • TiN deposition rate ~ 0.7A/cyc
    • Conductivity data: (to be added)