Difference between revisions of "Atomic Layer Deposition Recipes"
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{{recipes|Vacuum Deposition}} |
{{recipes|Vacuum Deposition}} |
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=[[Atomic Layer Deposition (Oxford FlexAL)]]= |
=[[Atomic Layer Deposition (Oxford FlexAL)]]= |
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− | ==Al{{sub|2}}O{{sub|3}} deposition (ALD)== |
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+ | == Oxford FlexAL Chamber #1: Metals == |
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− | *{{fl|ALD-Al2O3-300-Recipe.pdf|Al{{sub|2}}O{{sub|3}} 300}} |
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+ | '''Maximum 30nm deposition thickness!''' (ask [[Brian Lingg|Tool Supervisor]] if needed.) |
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− | *{{fl|ALD-Al2O3-300-Saturated-Recipe.pdf|Al{{sub|2}}O{{sub|3}} 300 Saturated}} |
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+ | === Pt deposition (ALD CHAMBER 1) === |
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− | *{{fl|ALD-Al2O3-Plasma-300C-Recipe.pdf|Al{{sub|2}}O{{sub|3}} plasma 300C}} |
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+ | *Recipe name: '''''Ch1_TMCpPt+O3-300C''''' |
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− | *{{fl|ALD-Al2O3-100-Recipe.pdf|Al{{sub|2}}O{{sub|3}} 100}} |
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+ | **Pt deposition rate ~ 0.5-0.6 A/cyc |
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+ | **Conductivity data: (to be added) |
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+ | **recipe utilizes the ozone generator which must be first set to the following conditions: |
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+ | ***O<sub>2</sub> flow = 250sccm |
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+ | ***O<sub>3</sub> concentration = 15 wt% |
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+ | **300°C deposition |
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+ | *Recipe name: '''''CH1-TMCpPt+250W/O*-300C''''' |
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+ | **Uses Oxygen plasma |
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+ | **300°C deposition |
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− | == |
+ | === Ru deposition (ALD CHAMBER 1) === |
+ | * Recipe name: '''''Ch1_Ex03Ru[HPbub]+O2-300C''''' |
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− | *{{fl|ALD-AlN-300-recipe.pdf|AlN 300}} |
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+ | * Ru deposition rate ~ 0.6-0.7A/cyc. |
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+ | * Conductivity data: (to be added) |
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+ | * 300°C, O2 gas reaction |
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− | == |
+ | === ZnO Deposition (ALD Chamber 1) === |
+ | ''Conductive film.'' |
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− | *{{fl|ALD-HfO2-100-recipe.pdf|HfO{{sub|2}} 100}} |
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+ | * Recipe name: '''''Ch1_DEZ+H2O-200C''''' |
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− | *{{fl|ALD-HfO2-300-recipe.pdf|HfO{{sub|2}} 300}} |
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+ | * ZnO deposition rate ≈ 1.6 A/cycle |
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+ | *resistivity ≈ ''TBA'' |
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+ | *200°C Deposition, Water reaction |
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− | == |
+ | === ZnO:Al deposition (ALD CHAMBER 1) === |
+ | ''Al-Doped ZnO for variable resisitivity.'' |
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− | *{{fl|ALD-SiO2-100-recipe.pdf|SiO{{sub|2}} 100}} |
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+ | *Recipe name: '''''Ch1_DEZ/TMA+H2O-200C''''' |
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− | *{{fl|ALD-SiO2-300-recipe.pdf|SiO{{sub|2}} 300}} |
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+ | **''The recipe has TWO loops. The Outer loop determines final thickness. The Inner loop determines how much AlOx is doped into the film. Note that each full (outer-loop) cycle takes a long time due to this double-loop structure.'' |
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+ | *Al dose fraction = 5% for lowest resistivity |
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+ | *ZnO deposition rate ~ 1.7A/cyc |
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+ | *resistivity ~ 4200uOhm.cm (390A film) |
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+ | == Oxford FlexAL Chamber #3: Dielectrics == |
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− | ==ZrO{{sub|2}} deposition (ALD)== |
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+ | '''Maximum 30nm deposition thickness!''' (ask [[Brian Lingg|Tool Supervisor]] if needed.) |
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− | *{{fl|ALD-ZrO2-300-recipe.pdf|ZrO{{sub|2}} 300}} |
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− | == |
+ | ===Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 3)=== |
+ | |||
− | *TiO{{sub|2}} 200 recipe '''WJM_TDMAT_H2O_r2''' water dose 1s (pdf file to be added)gives grow rate 0.9 A/cycle as measured by ellipsometer |
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+ | *Recipe name: '''''CH3-TMA+H2O-<u>300C</u>''''' |
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+ | **Al<sub>2</sub>O<sub>3</sub> deposition rate ~ 1A/cyc |
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+ | **300°C Dep., Water reaction |
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+ | **This is considered the standard recipe for ALD |
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+ | **Temperature variations: 300°C (std.), 250°C, 200°C, 150°C, 120°C |
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+ | *Recipe Name: '''''CH3-TMA+250W/O*-300C''''' |
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+ | **Similar deposition rate |
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+ | **Oxygen Plasma reaction instead of H2O |
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+ | **Lower carbon content, approx. <u>1.5–2x faster deposition rate.</u> |
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+ | **Temperature variations: 300°C (std.), 200°C, 120°C |
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+ | *Recipe Name: '''''CH3-TMA+O3/200mT-300C''''' |
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+ | **Similar dep. rate |
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+ | **Ozone (O<sub>3</sub>) reactant, experimental |
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+ | |||
+ | ===AlN deposition (ALD CHAMBER 3)=== |
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+ | *Recipe name: '''''CH3-TMA+100W/N*-300C''''' |
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+ | **AlN deposition rate ~ t.b.d. |
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+ | **Recipe utilizes a N* plasma @ 100W, 20mTorr pressure. |
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+ | **Temperature Variations: 300°C Dep. (std.), 200*C, 120°C |
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+ | **Power variations: 300W, 400W (at 300°C) |
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+ | **Nitrogen/Hydrogen variations: "30N*/30H*" at 200*C and 300°C |
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+ | |||
+ | ===HfO{{sub|2}} deposition (ALD CHAMBER 3)=== |
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+ | *Recipe name: '''''CH3-TEMAH+H2O-300C''''' |
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+ | **HfO<sub>2</sub> deposition rate ~ 0.9-1.0A/cyc |
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+ | **Note: deposition shows significant parasitic growth (via CVD channel) if H<sub>2</sub>O purge/pump times are not sufficient. |
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+ | **Temperature variations: 300°C (std.), 250°C, 200°C, 150°C, 120°C |
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+ | *Recipe name: '''''CH3-TEMAH+250W/O*-300C''''' |
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+ | **Uses Oxygen plasma reactant instead of H<sub>2</sub>O |
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+ | *Recipe name: '''''CH3-TEMAH+O3/100mT-300C''''' |
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+ | **Uses Ozone (O<sub>3</sub>) for reactant instead of H<sub>2</sub>O |
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+ | |||
+ | ===SiO{{sub|2}} deposition (ALD CHAMBER 3)=== |
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+ | *Recipe name: '''''CH3-TDMAS+250W/O*-300C''''' |
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+ | **SiO<sub>2</sub> deposition rate ~ 0.7-0.8A/cyc |
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+ | **Recipe utilizes an O* plasma @ 250W, 5mTorr pressure, 300°C Temp. |
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+ | **Temperature variations: 300*C (std.), 250°C, 230°C, 200°C, 150°C, 120°C |
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+ | *Recipe name: '''''CH3-TDMAS+O3/200mT-300C''''' |
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+ | **Uses Ozone (O<sub>3</sub>) for reactant instead of H<sub>2</sub>O |
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+ | |||
+ | ===ZrO{{sub|2}} deposition (ALD CHAMBER 3)=== |
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+ | *Recipe name: '''''CH3-TEMAZ+H2O-300C''''' |
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+ | **ZrO<sub>2</sub> deposition rate ~ 0.9-1.0A/cyc |
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+ | **Not directly characterized since results are basically the same as the HfO<sub>2</sub> process above. |
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+ | **Temperature variations: 300°C (std.), 200°C |
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+ | *Recipe name: '''''CH3-TEMAZ+250W/O*-300C''''' |
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+ | **Uses Oxygen plasma reactant instead of H<sub>2</sub>O |
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+ | *Recipe name: '''''CH3-TEMAZ+O3/100mT-300C''''' |
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+ | **Uses Ozone (O<sub>3</sub>) for reactant instead of H<sub>2</sub>O |
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+ | |||
+ | ===TiO{{sub|2}} deposition (ALD CHAMBER 3)=== |
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+ | *Recipe name: '''''CH3-TDMAT+H2O-300C''''' |
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+ | **TiO<sub>2</sub> deposition rate ~ 0.6A/cyc |
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+ | **Note: deposition shows parasitic growth (via CVD channel) if H<sub>2</sub>O purge/pump times are not sufficient. |
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+ | **Temperature variations: 300°C (std.), 200°C, 120*C |
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+ | *Recipe name: '''''CH3-TDMAT+250W/O*-300C''''' |
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+ | **Uses Oxygen plasma reactant instead of H<sub>2</sub>O |
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+ | |||
+ | ===TiN deposition (ALD CHAMBER 3)=== |
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+ | *Recipe name: '''''CH3-TDMAT+400W/12N*/4H*-300C''''' |
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+ | **TiN deposition rate ~ 0.7A/cyc |
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+ | **Conductivity data: (to be added) |
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+ | **Uses Plasma of N2 & H2 gases. |
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+ | **Temperatures: 300°C (std.), 200°C |
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+ | *Recipe name: '''''CH3-TDMAT+100W/N*-300C''''' |
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+ | **Uses Plasma of N2 only |
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+ | **Temperatures: 300°C (std.), 200°C |
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+ | *Recipe name: '''''CH3-TDMAT+100W/NH3*-300C''''' |
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+ | **Uses Plasma of NH<sub>3</sub> only |
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+ | **Temperatures: 300°C (std.), 200°C |
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+ | |||
+ | === Historical Data (ALD Chamber 3) === |
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+ | * [[Tbd|2021 ALD Al2O3 (H2O, 300°C) Historical Data]] |
Revision as of 14:13, 28 May 2021
Back to Vacuum Deposition Recipes.
Atomic Layer Deposition (Oxford FlexAL)
Oxford FlexAL Chamber #1: Metals
Maximum 30nm deposition thickness! (ask Tool Supervisor if needed.)
Pt deposition (ALD CHAMBER 1)
- Recipe name: Ch1_TMCpPt+O3-300C
- Pt deposition rate ~ 0.5-0.6 A/cyc
- Conductivity data: (to be added)
- recipe utilizes the ozone generator which must be first set to the following conditions:
- O2 flow = 250sccm
- O3 concentration = 15 wt%
- 300°C deposition
- Recipe name: CH1-TMCpPt+250W/O*-300C
- Uses Oxygen plasma
- 300°C deposition
Ru deposition (ALD CHAMBER 1)
- Recipe name: Ch1_Ex03Ru[HPbub]+O2-300C
- Ru deposition rate ~ 0.6-0.7A/cyc.
- Conductivity data: (to be added)
- 300°C, O2 gas reaction
ZnO Deposition (ALD Chamber 1)
Conductive film.
- Recipe name: Ch1_DEZ+H2O-200C
- ZnO deposition rate ≈ 1.6 A/cycle
- resistivity ≈ TBA
- 200°C Deposition, Water reaction
ZnO:Al deposition (ALD CHAMBER 1)
Al-Doped ZnO for variable resisitivity.
- Recipe name: Ch1_DEZ/TMA+H2O-200C
- The recipe has TWO loops. The Outer loop determines final thickness. The Inner loop determines how much AlOx is doped into the film. Note that each full (outer-loop) cycle takes a long time due to this double-loop structure.
- Al dose fraction = 5% for lowest resistivity
- ZnO deposition rate ~ 1.7A/cyc
- resistivity ~ 4200uOhm.cm (390A film)
Oxford FlexAL Chamber #3: Dielectrics
Maximum 30nm deposition thickness! (ask Tool Supervisor if needed.)
Al2O3 deposition (ALD CHAMBER 3)
- Recipe name: CH3-TMA+H2O-300C
- Al2O3 deposition rate ~ 1A/cyc
- 300°C Dep., Water reaction
- This is considered the standard recipe for ALD
- Temperature variations: 300°C (std.), 250°C, 200°C, 150°C, 120°C
- Recipe Name: CH3-TMA+250W/O*-300C
- Similar deposition rate
- Oxygen Plasma reaction instead of H2O
- Lower carbon content, approx. 1.5–2x faster deposition rate.
- Temperature variations: 300°C (std.), 200°C, 120°C
- Recipe Name: CH3-TMA+O3/200mT-300C
- Similar dep. rate
- Ozone (O3) reactant, experimental
AlN deposition (ALD CHAMBER 3)
- Recipe name: CH3-TMA+100W/N*-300C
- AlN deposition rate ~ t.b.d.
- Recipe utilizes a N* plasma @ 100W, 20mTorr pressure.
- Temperature Variations: 300°C Dep. (std.), 200*C, 120°C
- Power variations: 300W, 400W (at 300°C)
- Nitrogen/Hydrogen variations: "30N*/30H*" at 200*C and 300°C
HfO2 deposition (ALD CHAMBER 3)
- Recipe name: CH3-TEMAH+H2O-300C
- HfO2 deposition rate ~ 0.9-1.0A/cyc
- Note: deposition shows significant parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
- Temperature variations: 300°C (std.), 250°C, 200°C, 150°C, 120°C
- Recipe name: CH3-TEMAH+250W/O*-300C
- Uses Oxygen plasma reactant instead of H2O
- Recipe name: CH3-TEMAH+O3/100mT-300C
- Uses Ozone (O3) for reactant instead of H2O
SiO2 deposition (ALD CHAMBER 3)
- Recipe name: CH3-TDMAS+250W/O*-300C
- SiO2 deposition rate ~ 0.7-0.8A/cyc
- Recipe utilizes an O* plasma @ 250W, 5mTorr pressure, 300°C Temp.
- Temperature variations: 300*C (std.), 250°C, 230°C, 200°C, 150°C, 120°C
- Recipe name: CH3-TDMAS+O3/200mT-300C
- Uses Ozone (O3) for reactant instead of H2O
ZrO2 deposition (ALD CHAMBER 3)
- Recipe name: CH3-TEMAZ+H2O-300C
- ZrO2 deposition rate ~ 0.9-1.0A/cyc
- Not directly characterized since results are basically the same as the HfO2 process above.
- Temperature variations: 300°C (std.), 200°C
- Recipe name: CH3-TEMAZ+250W/O*-300C
- Uses Oxygen plasma reactant instead of H2O
- Recipe name: CH3-TEMAZ+O3/100mT-300C
- Uses Ozone (O3) for reactant instead of H2O
TiO2 deposition (ALD CHAMBER 3)
- Recipe name: CH3-TDMAT+H2O-300C
- TiO2 deposition rate ~ 0.6A/cyc
- Note: deposition shows parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
- Temperature variations: 300°C (std.), 200°C, 120*C
- Recipe name: CH3-TDMAT+250W/O*-300C
- Uses Oxygen plasma reactant instead of H2O
TiN deposition (ALD CHAMBER 3)
- Recipe name: CH3-TDMAT+400W/12N*/4H*-300C
- TiN deposition rate ~ 0.7A/cyc
- Conductivity data: (to be added)
- Uses Plasma of N2 & H2 gases.
- Temperatures: 300°C (std.), 200°C
- Recipe name: CH3-TDMAT+100W/N*-300C
- Uses Plasma of N2 only
- Temperatures: 300°C (std.), 200°C
- Recipe name: CH3-TDMAT+100W/NH3*-300C
- Uses Plasma of NH3 only
- Temperatures: 300°C (std.), 200°C