Difference between revisions of "Stepper 3 (ASML DUV)"

From UCSB Nanofab Wiki
Jump to: navigation, search
(Operating Procedures: Link to UCSB Test Reticles)
m (moved Test Reticles into Process info, othe rminor changes)
Line 20: Line 20:
 
The full field useable exposure area is limited to the intersection of a 31mm diameter circle and a rectangle of dimensions 22mm x 27mm. See the [[ASML 5500 Mask Making Guidelines|Mask Making Guidelines page]] for more info on exposure field sizes and how to order your mask plates.
 
The full field useable exposure area is limited to the intersection of a 31mm diameter circle and a rectangle of dimensions 22mm x 27mm. See the [[ASML 5500 Mask Making Guidelines|Mask Making Guidelines page]] for more info on exposure field sizes and how to order your mask plates.
   
Resists Used (see [https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Photolithography_Recipes PhotoLith. Recipes] for processing info):
+
Resists Used (see [https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Photolithography_Recipes PhotoLith. Recipes] for full process info):
 
* UV210-0.3 - Positive: 300nm nominal thickness
 
* UV210-0.3 - Positive: 300nm nominal thickness
 
* UV6-0.8 - Positive: 800nm nominal thickness
 
* UV6-0.8 - Positive: 800nm nominal thickness
Line 37: Line 37:
 
*Minimum Feature Size: ≤150 nm isolated lines, ≤200 nm dense patterns
 
*Minimum Feature Size: ≤150 nm isolated lines, ≤200 nm dense patterns
 
*Maximum Wafer Bow: approx. 100 µm. (4-inch diam.).
 
*Maximum Wafer Bow: approx. 100 µm. (4-inch diam.).
**''Above this and the job may fail or lose the wafer inside the machine due to wafer vacuum error.''
+
**''Near this value, and the job may fail or lose the wafer inside the machine due to wafer vacuum error.''
  +
*[[ASML Stepper 3 - UCSB Test Reticles|UCSB Test Reticles - Alignment Markers, Resolution Testing etc.]]
   
 
=Service Provider=
 
=Service Provider=
Line 47: Line 48:
 
* [[media:ASML Job Set-Up Guide simple v1.pdf|Job Programming- Simplified -Full Wafers]]
 
* [[media:ASML Job Set-Up Guide simple v1.pdf|Job Programming- Simplified -Full Wafers]]
 
* [[ASML 5500 Mask Making Guidelines|ASML 5500 Mask Making Guidelines]]
 
* [[ASML 5500 Mask Making Guidelines|ASML 5500 Mask Making Guidelines]]
* [[ASML Stepper 3 - UCSB Test Reticles|UCSB Test Reticles - Alignment Markers etc.]]
 
   
 
=== Troubleshooting and Recovery ===
 
=== Troubleshooting and Recovery ===
Line 60: Line 60:
   
 
* [[ASML 5500: Choose Marks for Prealignment]]
 
* [[ASML 5500: Choose Marks for Prealignment]]
** ''If your job aborted with "Alignment failure" on the E- or P-Chuck, because it couldn't find the alignment marks, this is how to edit your job to use different alignment marks.''
+
** ''If your job aborted with "Alignment failure" on the E- or P-Chuck, because it your alignment marks are damaged, this is how to edit your job to use different alignment marks.''

Revision as of 13:25, 28 August 2018

Stepper 3 (ASML DUV)
ASML.jpg
Tool Type Lithography
Location Bay 3
Supervisor Brian Thibeault
Supervisor Phone (805) 893-2268
Supervisor E-Mail thibeault@ece.ucsb.edu
Description ASML PAS 5500/300 DUV Stepper
Manufacturer ASML
Sign up for this tool



About

The ASML 5500 stepper is a 248nm DUV stepper for imaging dense features down to below 200nm and isolated line structures down to below 150nm. Overlay accuracy is better than 30nm.

The system is configured for 4” wafers and, with staff support, mounted pieces down to 14mm in size can be exposed using a 4” wafer as a carrier. The system is designed for high throughput, so shooting multiple 4" wafers is extremely fast. Additionally, exposure jobs are highly programmable, allowing for very flexible exposures of multiple aligned patterns from multiple masks in a single session, allowing for process optimization of large vs. small features in a single lithography.

The full field useable exposure area is limited to the intersection of a 31mm diameter circle and a rectangle of dimensions 22mm x 27mm. See the Mask Making Guidelines page for more info on exposure field sizes and how to order your mask plates.

Resists Used (see PhotoLith. Recipes for full process info):

  • UV210-0.3 - Positive: 300nm nominal thickness
  • UV6-0.8 - Positive: 800nm nominal thickness
  • UV26-2.5 - Positive: 2.5um nominal thickness
  • UVN2300-0.5 - Negative: 500nm nominal thickness
  • AR2/DUV42P-6/DS-K101: Anti-Reflective Coatings
  • PMGI: Underlayer

AZ300MIF Developer for all processes

Process Information

Service Provider

Operating Procedures

Troubleshooting and Recovery

  • ASML 5500: Choose Marks for Prealignment
    • If your job aborted with "Alignment failure" on the E- or P-Chuck, because it your alignment marks are damaged, this is how to edit your job to use different alignment marks.