Difference between revisions of "Stepper 3 (ASML DUV)"

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(About)
(About: updated capabilities, moved mask sizes to separate paragraph.)
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= About =
 
= About =
   
The ASML 5500 stepper is a 248nm DUV stepper for imaging dense features down to below 200nm and isolated line structures down to below 150nm. The full field useable exposure area is limited to the intersection of a 31mm diameter circle and a rectangle of dimensions 22mm x 27mm. The system has a variable NA system and has a square field image size of 21 x 21mm for 0.63 NA and a square field image size of 22mm x 22mm for 0.4 to 0.57 NA. Other rectangular sizes available: 21mm x 23mm; 20mm x 24mm; 19mm x 25mm; 18mm x 25.5mm; 17mm x 26mm; 16mm x 26.5mm; 15mm x 27mm. Overlay accuracy is better than 30nm. The system is configured for 4” wafers and, with staff support, mounted pieces down to 14mm in size can be exposed using a 4” wafer as a carrier.
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The ASML 5500 stepper is a 248nm DUV stepper for imaging dense features down to below 200nm and isolated line structures down to below 150nm. Overlay accuracy is better than 30nm. The system is configured for 4” wafers and, with staff support, mounted pieces down to 14mm in size can be exposed using a 4” wafer as a carrier. The system is designed for high throughput, so shooting multiple 4" wafers is extremely fast. Additionally, the litho programming is highly programmable, allowing for very flexible exposures of multiple aligned patterns from multiple masks in a single session, allowing for process optimization of large vs. small features in a single lithography.
   
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The full field useable exposure area is limited to the intersection of a 31mm diameter circle and a rectangle of dimensions 22mm x 27mm. The system has a variable NA system and has a square field image size of 21 x 21mm for 0.63 NA and a square field image size of 22mm x 22mm for 0.4 to 0.57 NA.
Resists Used:
 
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Other rectangular sizes available: 21mm x 23mm; 20mm x 24mm; 19mm x 25mm; 18mm x 25.5mm; 17mm x 26mm; 16mm x 26.5mm; 15mm x 27mm.
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Resists Used (see [https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Photolithography_Recipes PhotoLith Recipes] for processing info):
 
* UV210-0.3 - Positive: 300nm nominal thickness
 
* UV210-0.3 - Positive: 300nm nominal thickness
 
* UV6-0.8 - Positive: 800nm nominal thickness
 
* UV6-0.8 - Positive: 800nm nominal thickness
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= Process Information =
 
= Process Information =
   
*[http://signupmonkey.ece.ucsb.edu/wiki/index.php/Lithography_Recipes Process Page]
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*[https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Photolithography_Recipes Process Page]
   
 
=Service Provider=
 
=Service Provider=
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=Operating Procedures=
 
=Operating Procedures=
* [[media:ASML_Job_Set-Up_Guide_v2.pdf|Job Programming - Full]]
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* [[media:ASML Job Set-Up Guide v2.pdf|Job Programming - Full]]
* [[media:ASML_Job_Set-Up_Guide_simple_v1.pdf|Job Programming- Simplified -Full Wafers]]
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* [[media:ASML Job Set-Up Guide simple v1.pdf|Job Programming- Simplified -Full Wafers]]
* [[media:ASML_Mask_Making_Guidelines.pdf|Mask Making Guidelines]]
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* [[media:ASML Mask Making Guidelines.pdf|Mask Making Guidelines]]

Revision as of 13:27, 21 February 2018

Stepper 3 (ASML DUV)
ASML.jpg
Tool Type Lithography
Location Bay 3
Supervisor Brian Thibeault
Supervisor Phone (805) 893-2268
Supervisor E-Mail thibeault@ece.ucsb.edu
Description ASML PAS 5500/300 DUV Stepper
Manufacturer ASML
Sign up for this tool



About

The ASML 5500 stepper is a 248nm DUV stepper for imaging dense features down to below 200nm and isolated line structures down to below 150nm. Overlay accuracy is better than 30nm. The system is configured for 4” wafers and, with staff support, mounted pieces down to 14mm in size can be exposed using a 4” wafer as a carrier. The system is designed for high throughput, so shooting multiple 4" wafers is extremely fast. Additionally, the litho programming is highly programmable, allowing for very flexible exposures of multiple aligned patterns from multiple masks in a single session, allowing for process optimization of large vs. small features in a single lithography.

The full field useable exposure area is limited to the intersection of a 31mm diameter circle and a rectangle of dimensions 22mm x 27mm. The system has a variable NA system and has a square field image size of 21 x 21mm for 0.63 NA and a square field image size of 22mm x 22mm for 0.4 to 0.57 NA.

Other rectangular sizes available: 21mm x 23mm; 20mm x 24mm; 19mm x 25mm; 18mm x 25.5mm; 17mm x 26mm; 16mm x 26.5mm; 15mm x 27mm.

Resists Used (see PhotoLith Recipes for processing info):

  • UV210-0.3 - Positive: 300nm nominal thickness
  • UV6-0.8 - Positive: 800nm nominal thickness
  • UV26-2.5 - Positive: 2.5um nominal thickness
  • UVN2300-0.5 - Negative: 500nm nominal thickness
  • AR2/DUV42P-6/DS-K101: Anti-Reflective Coatings
  • PMGI: Underlayer

AZ300MIF Developer for all processes

Process Information

Service Provider

Operating Procedures