PECVD 2 (Advanced Vacuum)

From UCSB Nanofab Wiki
Revision as of 10:46, 9 January 2015 by Biljana (talk | contribs) (See Also)
Jump to: navigation, search
PECVD 2 (Advanced Vacuum)
PECVD2.jpg
Tool Type Vacuum Deposition
Location Bay 2
Supervisor Mike Silva
Supervisor Phone (805) 893-3096
Supervisor E-Mail silva@ece.ucsb.edu
Description Vision 310 Advanced Vacuum PECVD
Manufacturer Veeco
Vacuum Deposition Recipes
Sign up for this tool


About

This open-load system is dedicated to PECVD of SiO2, SiNx, SiOxNy, and a-Si using Silane (2%SiH4, 98% He), N2O, NH3, and N2 gases. The sample electrode has a 270mm diameter useable area, allowing for multiple 4” wafer depositions in a single run. Standard operating temperature is 300C, but can be user changed for temps ranging anywhere from 250 to 350C. The system is equipped with a dual generator, dual frequency option for growth of low-stress Nitride films.

See Also