Difference between revisions of "Oxygen Plasma System Recipes"

Revision as of 09:41, 25 September 2019

Back to Dry Etching Recipes.

Ashers (Technics PEII)

CF4/O2 PEii

SiN Etching

Pressure = 300mT–350mT
Power = 100W
Etch Rate ≈ 50-100 nm/min. Varies.

Chamber Clean after CF4 Etching

Pressure = 300mT–350mT
Power = 300W
Time = 10min
Set power back to 100W before shutting off plasma!

Plasma Clean (Gasonics 2000)

Recipes are posted at the tool, with photoresist etch rates.

Plasma Clean (YES EcoClean)

UV Ozone Reactor

The UV Ozone Reactor is used for two purposes:

Etch away organic residue with no ion bombardment
Oxidize surface (monolayers) of a substrate, which has been used for
- Providing a wet-etchable sacrifical surface layer which is removed prior to deposition or regrowth
- Controlled digital etching, by wet etching the oxide and then repeating the oxidation/etch cycle.

Plasma Activation (EVG 810)

O2 and N2 plasma activation recipes are available on this tool.

These are the qualified recipes provided by EVG and will not require adjustment of the RF Match:

@@ Line 1: / Line 1: @@
-{{recipes}}
+{{recipes|Dry Etching}}
-=[[Ashers (Technics PEII)]]=
+==[[Ashers (Technics PEII)]]==
-=[[Plasma Clean (Gasonics 2000)]]=
+===CF4/O2 PEii===
-=[[UV Ozone Reactor]]=
-=[[Plasma Activation (EVG 810)]]=
+====SiN Etching====
+*Pressure = 300mT–350mT
+*Power = 100W
+*Etch Rate ≈ 50-100 nm/min. Varies.
+===Chamber Clean after CF4 Etching===
+*Pressure = 300mT–350mT
+*Power = 300W
+*Time = 10min
+*<u>Set power back to 100W ''before'' shutting off plasma!</u>
+==[[Plasma Clean (Gasonics 2000)]]==
+Recipes are posted at the tool, with photoresist etch rates.
+==[[Plasma Clean (YES EcoClean)]]==
+*[[YES-150C-Various-Resists|Various Resists at 150C-3kW]]
+*[[YES-SPR220-Various-Temps|SPR220-7 at 3kW various Temps]]
+==[[UV Ozone Reactor]]==
+The UV Ozone Reactor is used for two purposes:
+*Etch away organic residue with no ion bombardment
+*Oxidize surface (monolayers) of a substrate, which has been used for
+**Providing a wet-etchable sacrifical surface layer which is removed prior to deposition or regrowth
+**Controlled digital etching, by wet etching the oxide and then repeating the oxidation/etch cycle.
+==[[Plasma Activation (EVG 810)]]==
+O2 and N2 plasma activation recipes are available on this tool.
+These are the qualified recipes provided by EVG and will not require adjustment of the RF Match:
+*[https://signupmonkey.ece.ucsb.edu/wiki/images/a/a6/ExSitu_0.4mbar.JPG ExSitu_0.4mbar – 0.4mbar, N<sub>2</sub>, 100/75W]
+*[https://signupmonkey.ece.ucsb.edu/wiki/images/0/0a/ExSitu_0.4mbar_Line2.JPG ExSitu_0.4mbar_Line2 – 0.4mbar, O<sub>2</sub>, 100/75W]
+*[https://signupmonkey.ece.ucsb.edu/wiki/images/c/c7/ExSitu_0.8mbar.JPG ExSitu_0.8mbar – 0.8mbar, N<sub>2</sub>, 100/75W]
+*[https://signupmonkey.ece.ucsb.edu/wiki/images/e/ec/ExSitu_0.8mbar_Line2.JPG ExSitu_0.8mbar_Line2 – 0.8mbar, O<sub>2</sub> 100/75W]
+*[https://signupmonkey.ece.ucsb.edu/wiki/images/0/02/Dis_0.2mbar_Line2.JPG Dis 0.2mbar_Line2 – 0.2mbar, O<sub>2</sub>, 125/75W]