Difference between revisions of "Oxygen Plasma System Recipes"
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{{recipes|Dry Etching}} |
{{recipes|Dry Etching}} |
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| − | =[[Ashers (Technics PEII)]]= |
+ | ==[[Ashers (Technics PEII)]]== |
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| + | === CF4/O2 PEii === |
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| + | ==== SiN Etching ==== |
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| + | * Pressure = 300mT–350mT |
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| + | * Power = 100W |
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| + | * Etch Rate ≈ 50-100 nm/min. Varies. |
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| + | === Chamber Clean after CF4 Etching === |
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| + | * Pressure = 300mT–350mT |
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| + | * Power = 300W |
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| + | * Time = 10min |
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| + | * <u>Set power back to 100W ''before'' shutting off plasma!</u> |
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Revision as of 15:25, 28 August 2018
Back to Dry Etching Recipes.
Ashers (Technics PEII)
CF4/O2 PEii
SiN Etching
- Pressure = 300mT–350mT
- Power = 100W
- Etch Rate ≈ 50-100 nm/min. Varies.
Chamber Clean after CF4 Etching
- Pressure = 300mT–350mT
- Power = 300W
- Time = 10min
- Set power back to 100W before shutting off plasma!