Lithography Recipes

General Information

This page contains information and links to recipes/datasheets spin-coated materials used in the facility. In general, the following information is provided for the following materials:

• Photoresists: Links to nominal recipes to provide the user with starting points are found in the Photo Lithography Recipe section. Substrate, surface materials, pattern size can often affect process parameters. Datasheets provided for reference.
• E-beam Lithography Resists: Links to nominal recipes may be provided in the E-Beam Lithography Recipe Section. Substrates and patterns play a large role in process parameters. Datasheets provided for reference.
• Nanoimprinting Resists: Datasheets are provided. Any recipes provided are for use in the Nano-Imprint (Nanonex NX2000) system only and are found in the Nanoimprinting Recipes section.

• Underlayers: These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist. Datasheets are provided and some recipes are found in the Lift-Off Techniques section.
• Holography: For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square. Recipes for silicon substrates are provided in the Holography section.
• Anti-Reflection Coatings: These are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes. Recipes using these materials are found within the photoresist recipes themselves. Datasheets are provided for reference on use of the materials.
• Contrast Enhancement Materials (CEM): Used for resolution enhancement. Not for use in contact aligners. Recipes using these materials are found within the photoresist recipes themselves. Datasheets also provided.
• Adhesion Promoters: These are used to improve wetting of photoresists to your substrate. Datasheets are provided on use of these materials.

• Low-K Spin-on Dielectrics: Datasheets are provided for BCB, Photo-BCB, and SOG for reference on use. Some recipes are provided in the Low-K Spin-On Dielectric Recipes section.
• Developers and Removers: Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching. Datasheets provided for reference.

Photolithography Recipes

• R = Recipe is available. Clicking this link will take you to the recipe.
• A = Material is available for use, but no recipes are provided.

Photolithography Recipes
	Contact Aligners		Steppers
Positive Resists	SUSS MJB-3	SUSS MA-6	Stepper 1 (GCA 6300)	Stepper 2 (AutoStep 200)	Stepper 3 (ASML DUV)	MLA150 (Heidelberg)
AZ4110	R	R	A	A
AZ4210	R	R	A	A
AZ4330RS	R	R	A	A
OCG 825-35CS	A	A	A	A
SPR 950-0.8	A	A	A	A
SPR 955 CM-0.9	A	R	R	R
SPR 955 CM-1.8	A	A	R	R
SPR 220-3.0	R	R	R	R
SPR 220-7.0	R	R	R	R
THMR-IP3600 HP D			A	A
UV6-0.8					R
UV210-0.3					R
UV26-2.5					A
Negative Resists	SUSS MJB-3	SUSS MA-6	Stepper 1 (GCA 6300)	Stepper 2 (AutoStep 200)	Stepper 3 (ASML DUV)	MLA150 (Heidelberg)
AZ5214-EIR	R	R	R	R
AZnLOF 2020	R	R	R	R
AZnLOF 2035	A	A	A	A
AZnLOF 2070	A	A	A	A
AZnLOF 5510	A	A	R	R
UVN2300-0.5					R
SU-8 2005,2010, 2015	A	R	A	A
SU-8 2075	A	A	A	A
NR9-1000,3000,6000PY	A	A	A	R
	SUSS MJB-3	SUSS MA-6	Stepper 1 (GCA 6300)	Stepper 2 (AutoStep 200)	Stepper 3 (ASML DUV)	MLA150 (Heidelberg)

E-Beam Lithography Recipes

• Under Development.

Nanoimprinting Recipes

• Thermal Nanoimprint Process and Tutorial
• UV-Cure Low Temp, Low Pressure, Soft-Stamp Nanoimprint Process

Holography Recipes

• Standard Holography Process - on SiO2 on Si
• Holography Process Variations - Set-up Angle - Etching into SiO2 and Si
• Etch SiO2 Nano-structure - Changing Side-wall Angle - Etching into Si with a different line-width
• Reduce SiO2 Nanowire Diameter - Thermal Oxidation - Vapor HF Etching

Low-K Spin-On Dielectric Recipes

• Photo BCB (4024-40)
• Standard BCB (3022-46)
• SOG (T512B)

Lift-Off Techniques

• Description/Tutorial
• Bi-Layer Process with PMGI Underlayer and Contact Aligner

Chemical Datasheets

The following is a list of the lithography chemicals we have available in the lab, with links to the datasheets for each. The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.

Positive Photoresists i-line and broadband AZP4000 (AZ4110, AZ4210, AZ4330) OCG825 SPR220 (SPR220-3, SPR220-7) SPR955CM (SPR955CM-0.9, SPR955CM-1.8) THMR-3600HP-1 (thin i-line and Holography) THMR-3600HP-2 (thin i-line and Holography) THMR-3600HP-3 (thin i-line and Holography) DUV-248nm UV210-0.3 UV6-0.8 UV26-2.5 Negative Photoresists i-line and broadband AZ5214 AZnLOF5510 AZnLOF2000 (AZnLOF2020, AZnLOF2035, AZnLOF2070) Futurrex NR9-1000PY(use AZ300MIF dev) Futurrex NR9-3000PY(use AZ300MIF dev) Futurrex NR9-6000PY(use AZ300MIF dev) SU-8-2005,2010, 2015 SU-8-2075 DUV-248nm UVN-30-0.8 Underlayers PMGI (PMGI SF3,5,8,11,15) Shipley LOL2000 E-beam resists PMMA (PMMA, P(MMA-MAA) copolymer) maN 2403 Nanoimprinting NX1020 MRI-7020 MR-UVCur21 Ormostamp

Contrast Enhancement Materials CEM365iS Anti-Reflection Coatings XHRiC (i-line) DUV42P (DUV) (For AR2 replacement) DS-K101 (DUV developable BARC) Adhesion Promoters HMDS AP3000 BCB Adhesion Promoter Omnicoat, SU-8 Adhesion Promoter Ormoprime08-Ormostsmp Adhesion Promoter Spin-On Dielectrics Low-K Spin-On Dielectrics such as Benzocyclobutane and Spin-on Glass BCB, Cyclotene 3022-46(Not Photosensitive) PhotoBCB, Cyclotene 4022-40(Negative Polarity) BCB Adhesion Notes from Vendor Spin-on-Glass, Honeywell 512B (Not Photosensitive) Honeywell 512B Apps Data Developers AZ400K (AZ400K, AZ400K1:4) AZ300MIF DS2100 BCB Developer SU-8 Developer 101A Developer (for DUV Flood Exposed PMGI) Photoresist Removers AZ NMP This replaces 1165 AZ300T Remover PG, SU-8 stripper AZ EBR ("Edge Bead Remover", PGMEA)