ICP Etching Recipes

Back to Dry Etching Recipes.

Si Deep RIE (PlasmaTherm/Bosch Etch)

Bosch and Release Etch (Si Deep RIE)

• Bosch and Release Processes

Single-step Si Etching (not Bosch Process!) (Si Deep RIE)

• Single-step Si Vertical Etch Recipe - SF₆-C₄F₈-Ar

ICP Etch 1 (Panasonic E626I)

SiO₂ Etching (Panasonic 1)

• SiO₂ Vertical Etch Recipe Parameters - CHF₃
• SiO₂ CHF₃ Etch Variations

SiN_x Etching (Panasonic 1)

• SiN_x Etch Rates and Variations - CF₄-O₂

Al Etch (Panasonic 1)

• Al Etch Recipes - Cl₂BCl₃
• AlCl₃ Erosion Issue and the Solution

Cr Etch (Panasonic 1)

• Cr Etch Recipes - Cl₂O₂

Ti Etch (Panasonic 1)

• Ti Deep Etch Recipes - Cl₂Ar

W-TiW Etch (Panasonic 1)

• Ti-TiW Etch Recipes - SF₆Ar

GaAs-AlGaAs Etch (Panasonic 1)

• GaAs-Nanoscale Etch Recipe - PR mask - Cl₂-BCl₃-Ar
• AlGaAs Etch Recipes - Cl₂N₂
• GaAs DRIE via Etch Recipes - Cl₂-BCl₃-Ar PR passivation

GaN Etch (Panasonic 1)

• GaN Etch Recipes Cl₂N₂
• GaN Selective Etch over AlGaN Recipes BCl₃-SF₆

SiC Etch (Panasonic 1)

• SiC Etch Recipes Ni Mask - SF₆

Sapphire Etch (Panasonic 1)

• Sapphire Etch Recipes Ni and PR Mask - BCl₃-Cl₂

ICP Etch 2 (Panasonic E640)

Recipes starting points for materials without processes listed can be obtained from Panasonic1 recipe files. The chambers are slightly different, but essentially the same, requiring only small program changes to obtain similar results.

SiO₂ Etching (Panasonic 2)

• SiO₂ Vertical Etch Recipe - CHF₃
• SiO₂ Vertical Etch Recipe#2 - CF₄/CHF₃
• SiO₂ Nanoscale Etch Recipe - CHF₃/O₂

SiN_x Etching (Panasonic 2)

• SiN_x Nanoscale Etch Recipe - CHF₃/O₂

Al Etch (Panasonic 2)

• Al Etch Recipes - use panasonic 1 parameters, etch rate 50% higher

GaAs Etch (Panasonic 2)

• GaAs Etch Recipes - Panasonic 2 - Cl₂N₂

ICP-Etch (Unaxis VLR)

GaAs-AlGaAs Etch (Unaxis VLR)

• GaAs Etch Recipe (Cl₂N₂ 30C)
• AlGaAs Etch Recipe (Cl₂N₂ 30C)

InP-InGaAs-InAlAs Etch (Unaxis VLR)

• InP Etch Recipe (Cl₂N₂Ar 200C)
• InP-based Material Etch Profile (Cl₂N₂Ar200C)
• Unaxis InP Etch Recipe (Cl₂H₂ Ar 200C) Parameters
• InP-InGaAs Etch Profile (Cl₂H₂ Ar 200C)
• InGaAs-InAlAs Etch Issure (Cl₂H₂ Ar 200C)
• InP Etch (Cl₂H₂Ar 200C)2-17-2016
• InP Etch (Cl₂H₂Ar 200C) Start on 6-3-2016

GaN Etch (Unaxis VLR)

• GaN Etch Recipe (Cl₂BCl₃ Ar 85C)