Difference between revisions of "ICP Etch 2 (Panasonic E640)"

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(About)
(Detailed Specifications)
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*Optimal Emission Monitoring
 
*Optimal Emission Monitoring
 
*Etch pressure from 0.1 Pa to 5 Pa (0.75 mT - 37.5 mT)
 
*Etch pressure from 0.1 Pa to 5 Pa (0.75 mT - 37.5 mT)
*Cl<sub>2</sub>, BCl<sub>3</sub>, CF<sub>4</sub>, CHF<sub>3</sub>, SF<sub>6</sub>, Ar, N<sub>2</sub>, and O<sub>2</sub> in etch chamber
+
*Cl<sub>2</sub>, BCl<sub>3</sub>, CF<sub>4</sub>, CHF<sub>3</sub>, SF<sub>6</sub>, Ar, N<sub>2</sub>, and O<sub>2</sub> in etch chamber
*2000 W ICP ashing chamber
 
*RT - 250°C sample temperature for ashing
 
*Ashing pressures 50 mT - 500 mT
 
 
*O<sub>2</sub>, N<sub>2</sub>, CF<sub>4</sub>, H<sub>2</sub>O Vapor for ashing chamber
 
*O<sub>2</sub>, N<sub>2</sub>, CF<sub>4</sub>, H<sub>2</sub>O Vapor for ashing chamber
*Multiple 6” diameter wafer capable system
+
*Single 6” diameter wafer capable system
 
*Pieces possible by mounting to 6” wafer
 
*Pieces possible by mounting to 6” wafer
   

Revision as of 10:28, 15 June 2015

ICP Etch 2 (Panasonic E640)
ICP1.jpg
Tool Type Dry Etch
Location Bay 2
Supervisor Mike Silva
Supervisor Phone (805) 893-3096
Supervisor E-Mail silva@ece.ucsb.edu
Description ?
Manufacturer Panasonic Factory Solutions
Dry Etch Recipes
Sign up for this tool


About

This is a single-chamber tool for etching of a variety of materials. The chamber is configured as an ICP etching tool with 1000 W ICP power, 500 W RF substrate power, and RT - 80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching. This chamber has Cl2, BCl3, CF4, CHF3, SF6, Ar, N2, and O2 for gas sources and can be used to etch a variety of materials from SiO2 to metals to compound semiconductors. The chamber evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, allowing for fast pump down.

Detailed Specifications

  • 1000 W ICP source, 500 W RF Sample Bias Source in etching chamber
  • RT - 80°C sample temperature for etching
  • Optimal Emission Monitoring
  • Etch pressure from 0.1 Pa to 5 Pa (0.75 mT - 37.5 mT)
  • Cl2, BCl3, CF4, CHF3, SF6, Ar, N2, and O2 in etch chamber
  • O2, N2, CF4, H2O Vapor for ashing chamber
  • Single 6” diameter wafer capable system
  • Pieces possible by mounting to 6” wafer

Documentation