Difference between revisions of "ICP Etch 1 (Panasonic E646V)"
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|type = Dry Etch |
|type = Dry Etch |
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|super= Don Freeborn |
|super= Don Freeborn |
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= About = |
= About = |
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| + | This is a three-chamber tool for etching of a variety of materials. |
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| − | This is a single-chamber tool for etching of a variety of materials. The chamber is configured as an ICP etching tool with 1250 W ICP power, 600 W RF substrate power, and RT-80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching. This chamber has Cl<sub>2</sub>, BCl<sub>3</sub>, CF<sub>4</sub>, CHF<sub>3</sub>, SF<sub>6</sub>, Ar, N<sub>2</sub>, He, and O<sub>2</sub> for gas sources and can be used to etch a variety of materials from SiO<sub>2</sub> to metals to compound semiconductors. The chamber evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, allowing for fast pump down. The system accepts 6” wafers (JEIDA Std) or pieces mounted to the wafers. |
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| + | Chamber one "Etch Chamber" is configured as an ICP etching tool with 1000 W ICP power, 500 W RF substrate power, and RT - 80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching. |
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| + | This chamber has the following gas sources: Cl<sub>2</sub>, BCl<sub>3</sub>, N<sub>2</sub>, and O<sub>2</sub> (CHF<sub>3</sub> or Ar), (CF<sub>4</sub> or SF<sub>6</sub>), where two of the lines must be manually switched between the two options shown (gasses can't be used simultaneously). |
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| + | The system can be used to etch a variety of materials from SiO<sub>2</sub> to metals to compound semiconductors. The chamber is evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, and is load-locked for fast pump down. |
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| + | Chamber two, "Ashing Chamber" is a 2000 W ICP chamber configures for plasma "ashing" of photoresist and other materials such as BCB. The substrate is not biased for isotropic etching, and the chamber has CF<sub>4</sub> and O<sub>2</sub> for the gases. This is especially well-suited for omni-directional etching of photoresist/PR removal, or BCB etch-back. |
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| + | Chamber three "Rinse Chamber" is a DI rinsing chamber for rinsing off any etch byproducts before removing the sample from the system. |
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| + | The system accepts 6” wafers with SEMI-std. flats. Users often mount smaller pieces to the wafers, usually with easily removable oil to improve uniform heatsinking. In Automatic mode, multiple wafers can be run through automatically with the cassette-based system. |
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= Detailed Specifications = |
= Detailed Specifications = |
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| − | * |
+ | *1000 W ICP source, 500 W RF Sample Bias Source in etching chamber |
| + | *Multiple 6” diameter wafer capable system |
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| ⚫ | |||
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*Pieces possible by mounting to 6” wafer |
*Pieces possible by mounting to 6” wafer |
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| + | <u>Etch Chamber:</u> |
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| − | *Load-Locked |
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| + | *Optimal Emission Monitoring |
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| − | *Up to 20 steps per recipe |
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| ⚫ | |||
| + | *Room Temp - 80°C sample temperature for etching. Default 12°C Chuck Temperature. |
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| + | <u>Ashing Chamber:</u> |
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| + | *2000 W ICP ashing chamber |
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| + | *Ashing pressures 50 mT - 500 mT |
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| + | *O<sub>2</sub>, N<sub>2</sub>, CF<sub>4</sub>, H<sub>2</sub>O Vapor for ashing chamber |
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| + | *Room Temp. to 270°C etching. Default 50°C. |
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| + | |||
=Documentation= |
=Documentation= |
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| + | *{{fl|ICP1-Gas-Change-CHF3-AR.pdf|Gas Change Procedure (CHF3 & AR)}} |
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| − | *[[media:ICP-Etch-1-Operating-Manual.pdf|Operating Instruction Manual]] |
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| + | *{{fl|Gas Change CF4-SF6-CF4.pdf|Gas Change Procedure (CF4 & SF6)}} |
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| − | *[[ICP I Standard recipes.pdf|ICP I Standard Recipes]] |
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| + | *{{file|Panasonic 1 instructions.pdf|Panasonic _1_instructions.pdf}} |
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| − | *[[media:SiO2 and SIN calibrated etches.pdf|SiO2 and SiN calibrated etches]] |
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| + | *{{fl|Changing N2 to He.pdf|Gas Change Procedure (N2 & He)}} |
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Revision as of 09:30, 7 June 2018
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About
This is a three-chamber tool for etching of a variety of materials.
Chamber one "Etch Chamber" is configured as an ICP etching tool with 1000 W ICP power, 500 W RF substrate power, and RT - 80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching.
This chamber has the following gas sources: Cl2, BCl3, N2, and O2 (CHF3 or Ar), (CF4 or SF6), where two of the lines must be manually switched between the two options shown (gasses can't be used simultaneously).
The system can be used to etch a variety of materials from SiO2 to metals to compound semiconductors. The chamber is evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, and is load-locked for fast pump down.
Chamber two, "Ashing Chamber" is a 2000 W ICP chamber configures for plasma "ashing" of photoresist and other materials such as BCB. The substrate is not biased for isotropic etching, and the chamber has CF4 and O2 for the gases. This is especially well-suited for omni-directional etching of photoresist/PR removal, or BCB etch-back.
Chamber three "Rinse Chamber" is a DI rinsing chamber for rinsing off any etch byproducts before removing the sample from the system.
The system accepts 6” wafers with SEMI-std. flats. Users often mount smaller pieces to the wafers, usually with easily removable oil to improve uniform heatsinking. In Automatic mode, multiple wafers can be run through automatically with the cassette-based system.
Detailed Specifications
- 1000 W ICP source, 500 W RF Sample Bias Source in etching chamber
- Multiple 6” diameter wafer capable system
- Pieces possible by mounting to 6” wafer
Etch Chamber:
- Optimal Emission Monitoring
- Etch pressure from 0.1 Pa to 5 Pa (0.75 mT - 37.5 mT)
- Cl2, BCl3, N2, O2, (CHF3 or Ar), (CF4 or SF6) in etch chamber
- Room Temp - 80°C sample temperature for etching. Default 12°C Chuck Temperature.
Ashing Chamber:
- 2000 W ICP ashing chamber
- RT - 250°C sample temperature for ashing
- Ashing pressures 50 mT - 500 mT
- O2, N2, CF4, H2O Vapor for ashing chamber
- Room Temp. to 270°C etching. Default 50°C.