ICP-PECVD (Unaxis VLR)

ICP-PECVD (Unaxis VLR) File:UnaxisVLR.jpg Tool Type Vacuum Deposition Location Bay 1 Supervisor Tony Bosch Supervisor Phone (805) 893-3486 Supervisor E-Mail bosch@ece.ucsb.edu Description High Density ICP PECVD Manufacturer Unaxis Vacuum Deposition Recipes

About

This system is configured as an ICP PECVD deposition tool with 1000 W ICP power, 600 W RF substrate power, and RT-350°C operation. This chamber has 100% SiH_4, N₂, O₂, and Ar for gas sources. The high density PECVD produces a more dense, higher quality SiO₂ and Si₃N₄, as compared with conventional PECVD. With the high density plasma, deposition of high quality films can be done down to below 50°C for processes requiring lower temperatures. Stress compensation for silicon nitride is characterized.

Detailed Specifications

• 1000W ICP source, 600W RF Sample Bias Source in etching chamber
• RT - 350°C sample temperature
• 100% SiH₄, Ar, N₂, O₂
• Multiple 4” diameter wafer capable system
• Pieces possible by mounting or placing on 4 ” wafer