Difference between revisions of "Field Emission SEM 2 (JEOL IT800SHL)"
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|type = Inspection, Test and Characterization |
|type = Inspection, Test and Characterization |
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+ | |super= Aidan Hopkins |
|phone= (805)893-4974 |
|phone= (805)893-4974 |
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|location=Bay 1 |
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+ | |email=hopkins@ece.ucsb.edu |
|description = JEOL 7600F FESEM |
|description = JEOL 7600F FESEM |
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|manufacturer = [http://www.jeolusa.com/PRODUCTS/ElectronOptics/ScanningElectronMicroscopesSEM/FESEM/JSM7600F/tabid/544/Default.aspx JEOL USA Inc] |
|manufacturer = [http://www.jeolusa.com/PRODUCTS/ElectronOptics/ScanningElectronMicroscopesSEM/FESEM/JSM7600F/tabid/544/Default.aspx JEOL USA Inc] |
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= About = |
= About = |
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| − | The JEOL JSM-7600F FESEM is used for imaging a variety of samples made in the facility. For general specifications, see the link to the system above. Our system is equipped with a gentle-beam mode of operation where bias is put on the stage, allowing for high resolution imaging at low electron energies impinging the surface. This is especially useful for imaging low conductivity and insulating materials without the need for conductive layer coatings. |
+ | The JEOL JSM-7600F FESEM is used for imaging a variety of samples made in the facility. For general specifications, see the link to the system above. Our system is equipped with a gentle-beam mode of operation where bias is put on the stage, allowing for high resolution imaging at low electron energies impinging the surface. This is especially useful for imaging low conductivity and insulating materials without the need for conductive layer coatings. |
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| + | The system can accept a 4” wafer, but only 50mm (approx. 25x25mm) of the wafer is accessible with the stage movement. A retractable LABE detector is also installed for high resolution back-scattered electron imaging. |
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Revision as of 09:16, 18 May 2018
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About
The JEOL JSM-7600F FESEM is used for imaging a variety of samples made in the facility. For general specifications, see the link to the system above. Our system is equipped with a gentle-beam mode of operation where bias is put on the stage, allowing for high resolution imaging at low electron energies impinging the surface. This is especially useful for imaging low conductivity and insulating materials without the need for conductive layer coatings.
The system can accept a 4” wafer, but only 50mm (approx. 25x25mm) of the wafer is accessible with the stage movement. A retractable LABE detector is also installed for high resolution back-scattered electron imaging.