E-Beam Lithography System (JEOL JBX-6300FS)
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About
The 6300FS machine was installed at UCSB in May 2007.
This system uses the vector scan approach for electron beam deflection within a field, step and repeat for stage movement between fields, the combination of which allows the entire area of the sample to be exposed to the electron beam.
The machine can be run at 25, 50 and 100 kV. Note however, that the lower-resolution 50 kV mode is not used at UCSB.
Applications
- Quantum devices in AlGaAs/GaAs heterostructures
- Photonic crystal production for various photonic band-gap applications
- sub-200nm gates for T-Gate production in AlGaN/GaN HEMT structures
- micro-ring resonator structures for photonic waveguide filtering
- DBR gratings for 1.5 um lasers
- Aligned nano-electrode fabrication for various nanowire/nanotube electronic measurements
- Nano-MEMS structures
- 100 nm T-Gates for millimeter wave hererojunction FETs
Detailed Specifications
- “Hi-brightness” Thermal Field Emitter Source (ZnO/W)
- hi-resolution writing at nA’s
- 25, 50, and 100 kV operation
- Minimum Spotsize ~ 2nm @ 100kV
- Maximum scan speed = 12 MHz (0.083us/pixel)
- 150x150 mm writable area (but can load 200mm wafers)
- Stage control to 0.6 nm accuracy (λ/1024)
- Two deflector/objective lens system:
- 5th Lens (8nm) and 4th Lens modes (25-40nm)
- Dynamic Focus and Stigmation Control
- 10 mm/sec maximum stage speed
- UNIX computer controlled