Difference between revisions of "E-Beam 4 (CHA)"

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{{tool|{{PAGENAME}}
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{{tool2|{{PAGENAME}}
 
|picture=e-beam4.jpg
  
|picture=e-beam4.jpg
 
|type = Vacuum Deposition
  
|type = Vacuum Deposition
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|super= Tony Bosch
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|super= Michael Barreraz
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|super2= Bill Millerski
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|phone=(805)839-3918x217
  
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|phone=(805)839-7975
 
|location=Bay 3
  
|location=Bay 3
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|email=bosch@ece.ucsb.edu
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|email=dfreeborn@ece.ucsb.edu
 
|description = Multi-Wafer Evaporator
  
|description = Multi-Wafer Evaporator
 
|manufacturer = CHA Industries
  
|manufacturer = CHA Industries
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|materials =
 
|materials =
 
|toolid=10
  
|toolid=10
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}}
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}}
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[[File:EBeam4 Controls.jpeg|thumb|EBeam4's controls]]
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= About =
  
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This electron-beam evaporation system is the newest of the lab for metal deposition. This system is a bell-jar type system and has the capability to do up to 10-4” wafers in a lift-off configuration and up to 24-4” wafers in a sidewall coverage configuration. Rotational motion in combination with baffling is used for lift-off and provides roughly 5% uniformity across a 4” wafer. The sidewall coverage fixturing uses full planetary motion to provide coverage over all sidewalls. The system also an 8-pocket e-beam source and an Inficon IC/5 deposition controller that allows for programming of fully automated multiple layer depositions. The metals available for deposition are Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, Fe, NiCr, NiFe and Cr. This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations. The maximum deposition thickness during a run is limited to 1.0 microns.
  
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=About=
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This electron-beam evaporation system is a bell-jar type system and has the capability to do up to 9-4” wafers in a lift-off configuration and up to 18-4” wafers in a sidewall coverage configuration. Rotational motion in combination with baffling is used for lift-off and provides roughly 5% uniformity across a 4” wafer. The sidewall coverage fixturing uses full planetary motion to provide coverage over all sidewalls. The system also an 8-pocket e-beam source and an Inficon IC/5 deposition controller that allows for programming of fully automated multiple layer depositions. The metals available for deposition are Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, Fe, NiCr, NiFe and Cr. This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations. The maximum deposition thickness during a run is limited to 1.0 microns.
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=Detailed Specifications=
   
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= Detailed Specifications =
  
 
*Temescal 10kV power supply
  
*Temescal 10kV power supply
 
*1-Temescal 8-pocket series 260 e-beam sources
  
*1-Temescal 8-pocket series 260 e-beam sources
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*Cryo-pumped system with ~ 1e-7 ultimate base pressure
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*Cryo-pumped system with ~ 5e-7 ultimate base pressure
 
*Rotation with baffle for 5% uniformity over 4” wafer
  
*Rotation with baffle for 5% uniformity over 4” wafer
 
*Automatic vacuum sequencing
  
*Automatic vacuum sequencing
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*Automatic deposition of multiple layer stacks
  
*Automatic deposition of multiple layer stacks
 
*Sample size: Pieces or up to 10-4” wafers for lift-off and 24-4” wafers for sidewall coverage
  
*Sample size: Pieces or up to 10-4” wafers for lift-off and 24-4” wafers for sidewall coverage
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*Metals: Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, Fe, NiCr, NiFe and Cr
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*Metals: Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, Fe, NiCr, NiFe, Cr
   
 
=Documentation=
  
=Documentation=
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*[[media:E-Beam-4-Operating-Procedures.pdf|Operating Procedures]]
  
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= Materials Table =
  
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{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" class="collapsible collapsed wikitable"
  
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|-
  
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! colspan=6 width=1300 height=35 bgcolor="#D0E7FF" align="center"|<div style="font-size: 150%;">Materials Table</div>
  
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|- bgcolor="#D0E7FF"
 
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! width="45" bgcolor="#D0E7FF" align="center" | '''Material'''
 
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! width="45" bgcolor="#D0E7FF" align="center" | '''Density, g/cm3'''
 
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! width="45" bgcolor="#D0E7FF" align="center" | '''Z Ratio'''
 
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! width="45" bgcolor="#D0E7FF" align="center" | '''Master tooling, %'''
 
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! width="45" bgcolor="#D0E7FF" align="center" | '''Process Gain, A/sec/%pwr'''
  
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! width="100" bgcolor="#D0E7FF" align="center" | '''Comments'''
  
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|-
  
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|Ag
  
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| 10.50
  
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| 0.529
  
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|110
  
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|10.0
  
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|
  
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|-
  
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|Al
  
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| 2.70
  
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| 1.080
  
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|165
  
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|6.0
  
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|
  
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|-
  
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|Au
  
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|19.30
  
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| 0.381
  
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|120
  
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|10.0
  
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|
  
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|-
  
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|Co
  
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|8.90
  
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| 0.343
  
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|150
  
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|5.0
  
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|
  
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|-
  
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|Cr
  
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|7.20
  
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| 0.305
  
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|140
  
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|10.0
  
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|
  
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|-
  
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|Fe
  
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|7.86
  
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| 0.349
  
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|165
  
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|10.0
  
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|
  
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|-
  
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|Ge
  
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|5.35
  
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| 0.516
  
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|126
  
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|10.0
  
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|
  
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|-
  
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|Hf
  
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|13.09
  
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| 0.360
  
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|150
  
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|10.0
  
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|
  
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|-
  
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|Ir
  
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|22.40
  
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| 0.129
  
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|130
  
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|10.0
  
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|
  
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|-
  
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|Ni
  
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|8.91
  
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| 0.331
  
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|150
  
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|5.0
  
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|
  
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|-
  
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|NiCr
  
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|8.23
  
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| 0.321
  
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|140
  
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|10.0
  
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|
  
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|-
  
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|NiFe
  
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|8.70
  
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|1.00
  
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|100
  
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|10.0
  
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|
  
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|-
  
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*[https://wiki.nanotech.ucsb.edu/w/images/3/37/EBeam4_Operating_Instructions_4-7-2023.pdf Operating Procedures]
   
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=Materials Table=
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|
  
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For the materials tables, please visit the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #4)|E-Beam Recipe Page]].

Latest revision as of 12:04, 11 April 2023

E-Beam 4 (CHA)
E-beam4.jpg
Location Bay 3
Tool Type Vacuum Deposition
Manufacturer CHA Industries
Model SEC-600-RAP
Description Multi-Wafer Evaporator
Primary Supervisor Michael Barreraz
(805) 893-4147
mikebarreraz@ece.ucsb.edu

Secondary Supervisor

Bill Millerski

Recipes Vacuum Deposition RecipesN/A
SignupMonkey: Sign up for this tool


EBeam4's controls

About

This electron-beam evaporation system is a bell-jar type system and has the capability to do up to 9-4” wafers in a lift-off configuration and up to 18-4” wafers in a sidewall coverage configuration. Rotational motion in combination with baffling is used for lift-off and provides roughly 5% uniformity across a 4” wafer. The sidewall coverage fixturing uses full planetary motion to provide coverage over all sidewalls. The system also an 8-pocket e-beam source and an Inficon IC/5 deposition controller that allows for programming of fully automated multiple layer depositions. The metals available for deposition are Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, Fe, NiCr, NiFe and Cr. This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations. The maximum deposition thickness during a run is limited to 1.0 microns.

Detailed Specifications

  • Temescal 10kV power supply
  • 1-Temescal 8-pocket series 260 e-beam sources
  • Cryo-pumped system with ~ 5e-7 ultimate base pressure
  • Rotation with baffle for 5% uniformity over 4” wafer
  • Automatic vacuum sequencing
  • Temescal e-beam sweep control
  • Inficon IC/5 programmable crystal thickness monitoring system
  • Automatic deposition of multiple layer stacks
  • Sample size: Pieces or up to 10-4” wafers for lift-off and 24-4” wafers for sidewall coverage
  • Metals: Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, Fe, NiCr, NiFe, Cr

Documentation

Materials Table

For the materials tables, please visit the E-Beam Recipe Page.

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