https://wiki.nanofab.ucsb.edu/wiki/api.php?action=feedcontributions&user=Sawyer+l&feedformat=atomUCSB Nanofab Wiki - User contributions [en]2024-03-29T16:02:01ZUser contributionsMediaWiki 1.35.13https://wiki.nanofab.ucsb.edu/w/index.php?title=Maskless_Aligner_(Heidelberg_MLA150)&diff=161798Maskless Aligner (Heidelberg MLA150)2024-01-26T17:34:07Z<p>Sawyer l: Added quick start guide link</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=MLA150_Heidelberg_Bay_6_Photo.jpg<br />
|type = Lithography<br />
|super = Biljana Stamenic<br />
|super2 = Lee Sawyer<br />
|location = Bay 6<br />
|description = Direct-Write (Maskless) I-Line Photolithography<br />
|manufacturer = [https://heidelberg-instruments.com Heidelberg Instruments]<br />
|model = MLA150<br />
|toolid=32<br />
|materials = I-Line Photoresists<br />
}} <br />
==About==<br />
The MLA150 allows for arbitrary direct-write patterning of I-Line photoresists from an uploaded CAD drawing/file (GDS, DXF, CIF etc.). The system uses a [https://en.wikipedia.org/wiki/Digital_micromirror_device digital micromirror device] ("DMD", an array of MEMS mirrors) for patterning the exposure light-field, to programmatically expose digitized patterns directly onto the sample - no glass photomasks/reticles are required.<br />
<br />
Depending on the exposure options and write area, the MLA is able to expose a 100mm wafer in about 30min, and achieves minimum features sizes around 0.5µm, with overlay/alignment accuracy better than 200nm. <br />
<br />
The system has a continuous, automatic autofocus, using optical and pneumatic detection of the substrate surface.<br />
<br />
The software allows for custom drawings and alignment marks to be exposed onto any feature located on the microscope.<br />
<br />
Greyscale lithography allows for photoresist profiles with repeatable slanted or tapered structures, via an 8-bit greyscale bitmap or layer-structured DXF file. See the [[MLA150 - Troubleshooting#Greyscale Lithography Limitations|Greyscale Limitations page]] for more info.<br />
<br />
The high-aspect ratio (variable/long focal length) option enables vertical sidewalls on very thick (~100µm) photoresists.<br />
<br />
[[File:MLA150 Spatial Light Modulator Description.png|alt=Schematic of spatial light modulator exposure technique.|none|thumb|550x600px|Exposure method using a spatial light modulator, continuously moving stage and continuous autofocus. See [https://heidelberg-instruments.com/key-features/maskless-laser-lithography/ HIMT] for more info.]]<br />
<br />
==Detailed Specifications==<br />
<br />
*Maximum Writeable Area: 150 x 150mm<br />
*Substrate size: 9-inch square or 200mm round down to 5-mm pieces<br />
**''Contact staff for pieces < 5 mm.''<br />
*Wafer / substrate thickness: Max. 9mm / Min. 0.1mm<br />
*Exposure optics:<br />
**[https://en.wikipedia.org/wiki/Digital_micromirror_device Digital micromirror device (DMD)]<br />
**Laser #1: 375nm<br />
**Laser #2: 405nm<br />
**Lens NA = 0.95<br />
*Alignment Accuracy: Global ≤ 500nm; Local ("Field") ≤ 250nm<br />
*Linewidth variation: ≤100nm (relevant to stitched exposure fields)<br />
*Minimum Features: ~0.40µm line/space demonstrated with 0.5µm-thick PR. Requires additional effort. ≥1µm is relatively straightforward.<br />
*Write Grid (Address Unit):<br />
**High Quality Mode (std.): 40nm<br />
**Fast Mode: 100nm<br />
<br />
*Additional manufacturer options:<br />
**High-resolution option (Write Mode 1)<br />
**Extended Focus Range<br />
**Variable Focal Depth<br />
**Optical (laser) Autofocus in addition to std. Pneumatic Autofocus<br />
**Greyscale Mode<br />
**(No backside alignment)<br />
<br />
==Documentation==<br />
<br />
===Operating Procedures===<br />
<br />
*[https://wiki.nanotech.ucsb.edu/w/images/e/ec/MLA150_SOP_Rev_L_%28LS%29.docx.pdf MLA150 - Standard Operating Procedure] - updated Oct 7th 2022<br />
**''Includes File-upload procedure, CAD Conversion, Exposure and Alignment.''<br />
**User manuals ''are available at the tool and on the tool's computer.''<br />
*[https://wiki.nanofab.ucsb.edu/w/images/6/68/MLA150_Quick_Start_Rev_A.pdf MLA150 Quick Start Guide **Experienced Users Only**]<br />
*[[MLA150 - Large Image GDS Generation|Large Image Patterning]] - one way to generate a GDS file out of an arbitrary image (eg. JPG, BMP, PNG etc.)<br />
*[https://wiki.nanotech.ucsb.edu/w/images/4/48/MLA150_Substrate_Template_Rules.pdf Substrate Templates] have been updated, reflecting allowed sample sizes for each focus mode.<br />
*[[ASML Stepper 3 Standard Operating Procedure#Tips for FEM analysis|Focus Exposure Matrix Tips]] ("''Series''" mode) - it is normal to have to recalibrate your Dose/Focus after some time (eg. few months, or sooner if you're targeting <<2µm resolution)<br />
<br />
===[[MLA150 - Troubleshooting|<u>Troubleshooting & Known Bugs</u>]]===<br />
<br />
*''See the above page for troubleshooting/recovery info and workarounds to known bugs.''<br />
*Double-side polished transparent substrates can sometimes produce difficulties, due to the exposure light reflecting from the wafer underside. Many users have found ways to make them work properly - contact [[Demis D. John|staff]] if you need help with this.<br />
<br />
===Video Trainings===<br />
To get authorized on this tool:<br />
<br />
#please study the training videos below,<br />
#"shadow" experienced users in your group, if you have any, and<br />
#when you are ready, contact '''[[Biljana Stamenic|the supervisor]]''' for a hands-on check-off.<br />
<br />
'''Important:''' You must be authorized by a supervisor to use the tool! The video training is only one part of the training. Contact [[Biljana Stamenic|'''<u>the Supervisor</u>''']] for training procedures.<br />
<br />
*'''[https://gauchocast.hosted.panopto.com/Panopto/Pages/Viewer.aspx?id=5813cf18-37cb-48f1-aee6-acd50055c65e Heidelberg MLA150 Training Video]'''<br />
**''Bookmarks in the video can point you to specific solutions/procedures.''<br />
*'''UPDATES to the Video Training''': ''please review the addendums below:''<br />
**New software has been installed, the '''[https://wiki.nanotech.ucsb.edu/w/images/e/ec/MLA150_SOP_Rev_L_%28LS%29.docx.pdf SOP]''' shows the newer menu options.<br />
**CRITICAL: There are now TWO locations on which you must choose "Optical Autofocus". Failure to do so can result in <u>system damage</u>.<br />
**[https://wiki.nanotech.ucsb.edu/w/images/4/48/MLA150_Substrate_Template_Rules.pdf Substrate Templates] have been updated, which are currently not reflected in the video.<br />
**Numerous solved issues have been added to the [[MLA150 - Troubleshooting|'''Troubleshooting page''']].<br />
<br />
==Design Tools/Info==<br />
<br />
*[[MLA150 - Design Guidelines|Design Guidelines + Tips]] - ''useful info for designing your CAD files, alignment marks etc.''<br />
*[[MLA150 - CAD Files and Templates|CAD Files and Templates]]<br />
*[https://wiki.nanotech.ucsb.edu/w/images/4/48/MLA150_Substrate_Template_Rules.pdf Substrate Template Guidelines] ''- Choosing the right settings for your substrate size - CRITICAL!''<br />
<br />
==Recipes==<br />
<br />
*'''Recipes > Lithography >''' '''<u>[[Maskless Aligner Recipes#Maskless Aligner .28Heidelberg MLA150.29|Maskless Aligner MLA150]]</u>'''<br />
**''Starting recipes for various I-Line photoresists''</div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:MLA150_Quick_Start_Rev_A.pdf&diff=161797File:MLA150 Quick Start Rev A.pdf2024-01-26T17:32:43Z<p>Sawyer l: </p>
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<div></div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:DUV_Flood_Expose_SOP_Rev_C.pdf&diff=161768File:DUV Flood Expose SOP Rev C.pdf2024-01-09T21:44:50Z<p>Sawyer l: Sawyer l uploaded a new version of File:DUV Flood Expose SOP Rev C.pdf</p>
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<div></div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=DUV_Flood_Expose&diff=161667DUV Flood Expose2024-01-04T22:40:07Z<p>Sawyer l: SOP Rev</p>
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<div><br />{{tool2|{{PAGENAME}}<br />
|picture=DUV.jpg<br />
|type = Lithography<br />
|super= Lee Sawyer<br />
|super2= Bill Millerski<br />
|phone=(805)893-2123<br />
|location=Bay 6<br />
|email=lee_sawyer@ucsb.edu<br />
|description = 1000W Deep UV Flood Exposure System (LS-150X-10C2) and Illumination Controller (2130-C2)<br />
|manufacturer = Bachur & Associates/AB Manufacturing<br />
|materials = <br />
}} <br />
<br />
==About==<br />
This unit consists of a collimated deep ultraviolet (DUV) light source (mercury gas discharge short arc lamp) and power supply. The substrate is placed on a rotating chuck (not presently working) and is exposed by opening a timer-controlled shutter.<br />
<br />
Materials that are exposed are primarily spun-on thin films such as PMMA, PMGI, etc.<br />
<br />
==Detailed Specifications==<br />
<br />
*DUV wavelengths are 200-260 nm; the lamp power is limited to 1000 watts and can operate in either constant intensity or constant power mode<br />
*The full spectrum of Hg emission wavelengths from 200-450 nm is present on the sample<br />
*Exposure can be performed on a 4" wafer<br />
*Lamps are nominally rated for 400 hours<br />
*A reset timer was added in Feb. 1995 to limit "on" time (ie. provide for auto shut-off) for bulb life conservation<br />
<br />
==Spectra Images==<br />
<br />
===DUV Exposure System Spectra===<br />
[[image:DUV-System-Spectra.png|thumb|none|600px|DUV Exposure System Spectra]]<br />
<br />
==Documentation==<br />
<br />
*[https://wiki.nanofab.ucsb.edu/w/images/8/89/DUV_Flood_Expose_SOP_Rev_C.pdf DUV Flood Expose Standard Operating Procedure]</div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:DUV_Flood_Expose_SOP_Rev_C.pdf&diff=161666File:DUV Flood Expose SOP Rev C.pdf2024-01-04T22:39:39Z<p>Sawyer l: </p>
<hr />
<div></div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:ADT_SOP_Rev_J.pdf&diff=161441File:ADT SOP Rev J.pdf2023-10-30T21:57:39Z<p>Sawyer l: Sawyer l uploaded a new version of File:ADT SOP Rev J.pdf</p>
<hr />
<div></div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:ADT_SOP_Rev_J.pdf&diff=161439File:ADT SOP Rev J.pdf2023-10-30T21:56:31Z<p>Sawyer l: Sawyer l uploaded a new version of File:ADT SOP Rev J.pdf</p>
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<div></div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=Plasma_Activation_(EVG_810)&diff=161428Plasma Activation (EVG 810)2023-10-30T18:06:45Z<p>Sawyer l: SOP rev</p>
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<div>{{tool2|{{PAGENAME}}<br />
|picture=EVG.jpg<br />
|type = Dry Etch<br />
|super= Lee Sawyer<br />
|super2= Aidan Hopkins<br />
|phone= 805-893-2123<br />
|location=Bay 7<br />
|email=lee_sawyer@ucsb.edu<br />
|description = Plasma Surface Activation<br />
|manufacturer = EVG Group<br />
|materials = <br />
|toolid=29<br />
}} <br />
==About==<br />
This a capacitively coupled Oxygen plasma activation system used exclusively for the surface activation of clean surfaces prior to wafer bonding. This technique allows bonding temperatures to be lowered and is used as a companion tool to the Karl-Suss SB6 wafer bond tool.<br />
<br />
==Detailed Specifications==<br />
<br />
*Gases used: O<sub>2</sub> and N<sub>2</sub><br />
*Sample size: pieces to 6” wafer<br />
*Recipes characterized for substrate thicknesses between 250um and 750um. Thicknesses outside of this range need to have parameters optimized to minimize reflective power.<br />
<br />
==Documentation==<br />
<br />
*[https://wiki.nanofab.ucsb.edu/w/images/2/21/EVG_Plasma_Activation_SOP_Rev_E.pdf Plasma Activation Standard Operating Procedure]<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/9/93/EVG_Plasma_Activation_Recipe_Copying.pdf How to copy recipes]<br />
<br />
==Recipes==<br />
Please see the [[Oxygen Plasma System Recipes#Plasma Activation .28EVG 810.29|Oxygen Plasma Recipe]] page for standard EVG recipes.</div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:EVG_Plasma_Activation_SOP_Rev_E.pdf&diff=161427File:EVG Plasma Activation SOP Rev E.pdf2023-10-30T18:06:18Z<p>Sawyer l: </p>
<hr />
<div></div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=Dicing_Saw_(ADT)&diff=161412Dicing Saw (ADT)2023-10-17T22:11:35Z<p>Sawyer l: New SOP rev</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=ADT.jpg<br />
|type = Packaging<br />
|super= Lee Sawyer<br />
|super2= Aidan Hopkins<br />
|location=Backend Lab: ESB 1111<br />
|description = ADT Dicing Saw<br />
|model = ADT 7100<br />
|manufacturer = Advanced Dicing Technologies Ltd.<br />
|materials = <br />
|toolid=49<br />
}} <br />
==About==<br />
The Model 7100 Series is a semi-automatic dicing saw. Semiconductor, glass, and plastic substrates of all types can be automatically or manually cut. This dicing Saw is optimized for multi-angle dicing of tight tolerance substrates up to 200 mm diameter in size.<br />
<br />
Check the [https://wiki.nanotech.ucsb.edu/w/index.php?title=Packaging_Recipes#Dicing_Saw_Recipes_.28ADT_7100.29 Dicing Saw Recipes page] for the blades we currently stock.<br />
<br />
An ADT WM-966 tape applicator is used to mount samples to UV-release tape for dicing and an Ultron Systems UH104-8 UV lamp system is used to release samples post dicing.<br />
<br />
Contact Staff for blades and dicing frames for your group.<br />
<br />
==Detailed Specifications==<br />
<br />
*Maximum Wafer Size: 8"<br />
*Parts mounted to UV-release tape for dicing<br />
*Automated cut maps at multiple angles (0° and 90° typical)<br />
*~Few micron alignment to on-wafer features.<br />
*Thermocarbon Resnoid dicing blades provided by Staff<br />
<br />
==Operating Procedures==<br />
<br />
*[https://wiki.nanofab.ucsb.edu/w/images/5/54/ADT_SOP_Rev_J.pdf ADT Dicing Saw Standard Operating Procedure]<br />
*[https://wiki.nanotech.ucsb.edu/w/images/0/01/Tape_Station_SOP_Rev_A.pdf Tape Station Standard Operating Procedure]<br />
*[https://wiki.nanofab.ucsb.edu/w/images/5/5a/Ultron_1042R_Film_specs.pdf Ultron Systems, Inc. 1042R Anti-Static Ultraviolet Film TDS]<br />
*[[ADT 7100 - Recovering an Old Recipe (2019)|Recovering an Old Recipe]]<br />
<br />
<br />
==Recipes==<br />
<br />
*Recipes > Packaging > '''[[Packaging Recipes#Dicing Saw Recipes .28ADT 7100.29|Dicing Saw Recipes (ADT 7100)]]'''<br />
<br />
Be sure to also see the recipes for protecting your sample from dicing dust, and mounting/unmounting.</div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:ADT_SOP_Rev_J.pdf&diff=161411File:ADT SOP Rev J.pdf2023-10-17T22:10:45Z<p>Sawyer l: </p>
<hr />
<div></div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:RIE_2_SOP_Rev_D.pdf&diff=161380File:RIE 2 SOP Rev D.pdf2023-09-28T21:26:02Z<p>Sawyer l: Sawyer l uploaded a new version of File:RIE 2 SOP Rev D.pdf</p>
<hr />
<div></div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=Dicing_Saw_(ADT)&diff=161296Dicing Saw (ADT)2023-09-13T15:24:30Z<p>Sawyer l: Added UV tape TDS link</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=ADT.jpg<br />
|type = Packaging<br />
|super= Lee Sawyer<br />
|super2= Aidan Hopkins<br />
|location=Backend Lab: ESB 1111<br />
|description = ADT Dicing Saw<br />
|model = ADT 7100<br />
|manufacturer = Advanced Dicing Technologies Ltd.<br />
|materials = <br />
|toolid=49<br />
}} <br />
==About==<br />
The Model 7100 Series is a semi-automatic dicing saw. Semiconductor, glass, and plastic substrates of all types can be automatically or manually cut. This dicing Saw is optimized for multi-angle dicing of tight tolerance substrates up to 200 mm diameter in size.<br />
<br />
Check the [https://wiki.nanotech.ucsb.edu/w/index.php?title=Packaging_Recipes#Dicing_Saw_Recipes_.28ADT_7100.29 Dicing Saw Recipes page] for the blades we currently stock.<br />
<br />
An ADT WM-966 tape applicator is used to mount samples to UV-release tape for dicing and an Ultron Systems UH104-8 UV lamp system is used to release samples post dicing.<br />
<br />
Contact Staff for blades and dicing frames for your group.<br />
<br />
==Detailed Specifications==<br />
<br />
*Maximum Wafer Size: 8"<br />
*Parts mounted to UV-release tape for dicing<br />
*Automated cut maps at multiple angles (0° and 90° typical)<br />
*~Few micron alignment to on-wafer features.<br />
*Thermocarbon Resnoid dicing blades provided by Staff<br />
<br />
==Operating Procedures==<br />
<br />
*[https://wiki.nanofab.ucsb.edu/w/images/b/b0/ADT_SOP_Rev_I.pdf ADT Dicing Saw Standard Operating Procedure]<br />
*[https://wiki.nanotech.ucsb.edu/w/images/0/01/Tape_Station_SOP_Rev_A.pdf Tape Station Standard Operating Procedure]<br />
*[https://wiki.nanofab.ucsb.edu/w/images/5/5a/Ultron_1042R_Film_specs.pdf Ultron Systems, Inc. 1042R Anti-Static Ultraviolet Film TDS]<br />
*[[ADT 7100 - Recovering an Old Recipe (2019)|Recovering an Old Recipe]]<br />
<br />
<br />
==Recipes==<br />
<br />
*Recipes > Packaging > '''[[Packaging Recipes#Dicing Saw Recipes .28ADT 7100.29|Dicing Saw Recipes (ADT 7100)]]'''<br />
<br />
Be sure to also see the recipes for protecting your sample from dicing dust, and mounting/unmounting.</div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:Ultron_1042R_Film_specs.pdf&diff=161295File:Ultron 1042R Film specs.pdf2023-09-13T15:23:47Z<p>Sawyer l: </p>
<hr />
<div></div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=Dicing_Saw_(ADT)&diff=161294Dicing Saw (ADT)2023-09-13T15:23:12Z<p>Sawyer l: Updated About section</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=ADT.jpg<br />
|type = Packaging<br />
|super= Lee Sawyer<br />
|super2= Aidan Hopkins<br />
|location=Backend Lab: ESB 1111<br />
|description = ADT Dicing Saw<br />
|model = ADT 7100<br />
|manufacturer = Advanced Dicing Technologies Ltd.<br />
|materials = <br />
|toolid=49<br />
}} <br />
==About==<br />
The Model 7100 Series is a semi-automatic dicing saw. Semiconductor, glass, and plastic substrates of all types can be automatically or manually cut. This dicing Saw is optimized for multi-angle dicing of tight tolerance substrates up to 200 mm diameter in size.<br />
<br />
Check the [https://wiki.nanotech.ucsb.edu/w/index.php?title=Packaging_Recipes#Dicing_Saw_Recipes_.28ADT_7100.29 Dicing Saw Recipes page] for the blades we currently stock.<br />
<br />
An ADT WM-966 tape applicator is used to mount samples to UV-release tape for dicing and an Ultron Systems UH104-8 UV lamp system is used to release samples post dicing.<br />
<br />
Contact Staff for blades and dicing frames for your group.<br />
<br />
==Detailed Specifications==<br />
<br />
*Maximum Wafer Size: 8"<br />
*Parts mounted to UV-release tape for dicing<br />
*Automated cut maps at multiple angles (0° and 90° typical)<br />
*~Few micron alignment to on-wafer features.<br />
*Thermocarbon Resnoid dicing blades provided by Staff<br />
<br />
==Operating Procedures==<br />
<br />
*[https://wiki.nanofab.ucsb.edu/w/images/b/b0/ADT_SOP_Rev_I.pdf ADT Dicing Saw Standard Operating Procedure]<br />
*[https://wiki.nanotech.ucsb.edu/w/images/0/01/Tape_Station_SOP_Rev_A.pdf Tape Station Standard Operating Procedure]<br />
*Ultron Systems, Inc. 1042R Anti-Static Ultraviolet Film TDS<br />
*[[ADT 7100 - Recovering an Old Recipe (2019)|Recovering an Old Recipe]]<br />
<br />
<br />
==Recipes==<br />
<br />
*Recipes > Packaging > '''[[Packaging Recipes#Dicing Saw Recipes .28ADT 7100.29|Dicing Saw Recipes (ADT 7100)]]'''<br />
<br />
Be sure to also see the recipes for protecting your sample from dicing dust, and mounting/unmounting.</div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=UV_Ozone_Reactor&diff=161276UV Ozone Reactor2023-08-29T16:17:02Z<p>Sawyer l: Added an SOP</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=Ozone.jpg<br />
|type = Dry Etch <br />
|super= Lee Sawyer<br />
|super2= Tony Bosch<br />
|model=144AX<br />
|location=Bay 5<br />
|description = UV Ozone Cleaner<br />
|manufacturer = Jelight<br />
}} <br />
==About==<br />
UV+O (atomic oxygen) cleaning method is a photosensitized oxidation process in which the contaminant molecules of photo-resists, resins, human skin oils, cleaning solvent residues, silicone oils, and flux are excited and/or dissociated by the absorption of short-wavelength UV radiation. Near atomically clean surfaces can be achieved in less than one minute. In addition, this process does not damage any sensitive device structures of MOS gate oxide. The system can be used for oxygen activation, etching or oxidation of a surface without ion bombardment.<br />
<br />
==Documentation==<br />
<br />
*[https://wiki.nanofab.ucsb.edu/w/images/3/3e/UV_Ozone_SOP_Rev_A.pdf UV Ozone Reactor SOP]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/7/79/UV_Ozone_Manual_Jelight_M-144AX.pdf UV Ozone Manual]</div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:UV_Ozone_SOP_Rev_A.pdf&diff=161275File:UV Ozone SOP Rev A.pdf2023-08-29T16:16:05Z<p>Sawyer l: Sawyer l uploaded a new version of File:UV Ozone SOP Rev A.pdf</p>
<hr />
<div></div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:UV_Ozone_SOP_Rev_A.pdf&diff=161274File:UV Ozone SOP Rev A.pdf2023-08-29T15:42:06Z<p>Sawyer l: </p>
<hr />
<div></div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=E-Beam_2_(Custom)&diff=161267E-Beam 2 (Custom)2023-08-25T18:31:59Z<p>Sawyer l: SOP rev (minor)</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=IMG 5388.jpg<br />
|type = Vacuum Deposition<br />
|super= Lee Sawyer<br />
|super2= Don Freeborn<br />
|phone=(805)839-2123<br />
|location=Bay 3<br />
|email=lee_sawyer@ucsb.edu<br />
|description = Electron-Beam Evaporation System<br />
|manufacturer = Temescal<br />
|materials = <br />
|toolid=8<br />
}} <br />
==About==<br />
This electron-beam evaporation system is used for the controlled deposition of thin dielectric films. The films are evaporated from a wide variety of solid sources. The most common dielectrics deposited are: SiO<sub>2</sub>, ITO, TiO<sub>2</sub>, Ta<sub>2</sub>O<sub>5</sub>, and SrF<sub>2</sub>. Other materials may be evaporated upon request. Oxygen gas can be bled into the system during deposition to try to maintain the stoichiometry during deposition. Fixturing for heating the substrate can also be used. A crystal thickness monitor is used to control the deposition thickness. The dielectrics deposited by this system are typically used for optical coatings (anti-reflective), electrical insulators, and reactive ion etching masks. Samples up to ~ 5" diameter can be placed into this system for evaporation. Typical deposition rates are several Angstroms/second.<br />
<br />
==Detailed Specifications==<br />
<br />
*Temescal CV-6SXL 10 kV power supply<br />
*Temescal 4-pocket Series 260 E-Beam turret source<br />
*Temescal TemEbeam Controller (EBC); controls the high voltage power supply, electron beam position (up to 8 sweep patterns per pocket), and source pocket position<br />
*Inficon IC/5 Thin Film Deposition Controller<br />
*Cryo-pumped system with low E-7 ultimate base pressure<br />
*Automatic vacuum sequencing via CHA Auto-Tech II<br />
*Crystal thickness monitoring<br />
*Sample size: up to 5” diameter non-heated, 4" diameter heated<br />
*'''Heated''' sample holder (programmable), sample temps up to 370°C<br />
*'''Oxygen''' gas MFC for maintaining oxide stoichiometry<br />
<br />
==Documentation==<br />
<br />
*[https://wiki.nanofab.ucsb.edu/w/images/d/d5/EB2_SOP_Rev_H.pdf E-Beam #2 Standard Operating Procedure]<br />
<br />
==Recipes==<br />
<br />
*[[E-Beam Evaporation Recipes#E-Beam%202%20.28Custom.29|Recipes > Vac. Deposition > '''E-Beam 2 (Custom)''']]<br />
**Lists the characterized recipes for this machine - other materials may also be used with staff permission.</div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:EB2_SOP_Rev_H.pdf&diff=161266File:EB2 SOP Rev H.pdf2023-08-25T18:31:27Z<p>Sawyer l: </p>
<hr />
<div></div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=Packaging_Recipes&diff=161264Packaging Recipes2023-08-24T17:35:54Z<p>Sawyer l: /* Recommended Dicing Parameters */ Updated material table with 2C blades, other minor edits</p>
<hr />
<div><br />
==[[Dicing Saw (ADT)|Dicing Saw Recipes (ADT 7100)]]==<br />
<br />
===Recommended Dicing Parameters===<br />
This table is for our stocked [https://www.dicing.com Thermocarbon] Resnoid blades. <br />
<br />
-2C blades are 2mils/50µm wide, -4C blades are 4mils/100µm wide, and -8C blades are 8mils/200µm wide. Plan for ~10–30µm extra edge clearance to account for kerf, chipping, etc. <br />
<br />
Narrower (~30-50µm) Nickel Hubbed blades are often used for even narrower dicing streets, these must be purchased by the user.<br />
{| class="wikitable sortable"<br />
|-<br />
!Material<br />
!Blade P/N<br />
!Spindle Speed<br />
(KRPM)<br />
!Cut Speed<br />
(mm/s)<br />
|-<br />
|Alumina, AlN<br />
|2.187-8C-54RU-3<br />
|25<br />
|0.5-2<br />
|-<br />
|Ceramic<br />
|2.187-4C-30RU-3<br />
|18<br />
|0.5-2<br />
|-<br />
|GaAs<br />
|2.187-4C-9RU-3<br />
|35<br />
|1-5<br />
|-<br />
|GaN (<550um)<br />
|2.187-4C-30RU-3<br />
|35<br />
|0.5-3<br />
|-<br />
|GaN (>550um)<br />
|2.187-8C-30RU-3<br />
|35<br />
|0.5-2<br />
|-<br />
|Glass/Fused Silica<br />
|2.187-4C-22RU-3<br />
|25<br />
|1-5<br />
|-<br />
|InP<br />
|2.187-4C-9RU-3<br />
|35<br />
|1-5<br />
|-<br />
|Quartz<br />
|2.187-4C-30RU-3<br />
|25<br />
|1-5<br />
|-<br />
|Sapphire<br />
|2.187-8C-54RU-3<br />
|18<br />
|0.5-2<br />
|-<br />
|Si<br />
|2.187-2C-9RU-3<br />
|30<br />
|1-2<br />
|-<br />
|Si<br />
|2.187-4C-9RU-3<br />
|35<br />
|4-10<br />
|-<br />
|Si on Glasss<br />
|2.187-4C-9RU-3<br />
|25<br />
|1-5<br />
|-<br />
|SiC<br />
|2.187-8C-30RU-3<br />
|25<br />
|0.5-2<br />
|-<br />
|Ti<br />
|2.187-8C-54RU-3<br />
|15<br />
|0.5-2<br />
|}<br />
<br />
====Anatomy of a Blade====<br />
Example: '''2.187-4C-9RU-3'''<br />
<br />
"2.187": This is the blade Outer Diameter ("OD") in inches (55.55 mm).<br />
<br />
"4C": Blade thickness in mils. 4 mil = 100 µm<br />
<br />
"9": Diamond particle size in microns. Stocked resin blades have embedded diamond particles. Smaller particles create a smoother kerf, but remove less material and are thus less robust or require slower cutting speeds. <br />
<br />
"RU-3". A blade parameter that deals with cut quality vs. robustness (lifetime) of the blade.<br />
<br />
===Calculated Blade Exposures===<br />
{| class="wikitable"<br />
!Blade Diam<br />
!Flange Diam.<br />
!Blade Exposure<br />
!<br />
|-<br />
|2.187" (55.55 mm)<br />
|47 mm<br />
|4.275 mm<br />
|<br />
|-<br />
|2.187" (55.55 mm)<br />
|49 mm<br />
|3.275 mm<br />
|<br />
|-<br />
|2.187" (55.55 mm)<br />
|51 mm<br />
|2.275 mm<br />
|<br />
|-<br />
|2.187" (55.55 mm)<br />
|52 mm<br />
|1.775 mm<br />
|<br />
|-<br />
|2.187" (55.55 mm)<br />
|53 mm<br />
|1.275 mm<br />
|<br />
|}<br />
<br />
====Blade Exposure Calculation====<br />
[[File:ADT Dicing - Blade Exposure diagram.png|alt=schematic of blade exposure|none|thumb|600x600px|Diagram of blade exposure. If '''''A''''' '''''< 0.30mm''''', then the flange may hit your wafer, damaging the tool and wafer!]]<br />
<br />
===Mounting/Unmounting Samples===<br />
The UV-Release Tape dispenser is most-often used for mounting sample for dicing.<br />
<br />
The Tape Model installed is Ultron 1042R. [[ADT_UV-Tape_Table_1042R|Data Sheet Here]].<br />
<br />
*[[ADT WM-966 - UV Tape Mounting Standard Procedure|Procedure for mounting sample on UV-Release Tape]]<br />
*Full Release: 60 sec exposure<br />
*Partial Release for Shipping: 9 sec exposure<br />
<br />
====Wax-Mounting to Carrier====<br />
If your final die size will be very small, eg. <3mm square or so, the chances increase that many die will be ejected into the cooling water stream once you begin the 2nd cut angle, because the total surface area of die contacting the adhesive tape becomes very low <br />
<br />
A method to overcome this is to mount your sample with CrystalBond wax onto a Silicon carrier wafer. The wax is a much stronger adhesive. The drawback is that you must dissolve the wax to unmount your die, often resulting in a jumbled pile of small die in Acetone/Isopropanol, which can be difficult to handle/sort afterwards.<br />
<br />
To mount with wax onto a carrier wafer:<br />
<br />
- Prepare a clean silicon carrier wafers, at least ~5mm larger than your sample to be diced.<br />
<br />
- The Bay 5 solvent bench is most commonly used for wax mounting, although any solvent bench can be used as long as you cover the hotplate with wax and are careful to clean up any mess.<br />
<br />
- Cover the hotplate (cool) with clean tinfoil, and then raise temp to 130-150°C.<br />
<br />
- Place the silicon carrier on top, polished wide up, and wait a few min for it to heat up. Pressing down with tweezers can help speed this up.<br />
<br />
- Take either a small measured/weighed piece of crystalbond wax, or the whole stick, and touch/press it against the silicon carrier. The wax sticks are stored often on the bench shelves, edge of the bench, or the outside wall of the bench (where the vacuum ports are for the Bay 4 solvent bench).<br />
<br />
- Once a large enough puddle of melted wax is produced, remove the wax stick (use tweezers to hold the carrier wafer down), being careful to prevent the wax stringers from landing all over the workspace. You can clean it up later when the hotplate is cold.<br />
<br />
— You want to make sure the entire underside of the sample will be contacting the wax, but don’t want so much wax that the sample will be tilted/uneven. Excess wax can easily be removed on an upcoming step.<br />
<br />
- With tweezers, place your sample to be diced on the wax, face up.<br />
<br />
- Optional: press down the edges/corners of the sample to make it approximately flat.<br />
<br />
- Remove the entire tinfoil sheet, with carrier wafer, from the hotplate to let it cool down. Once cool (few mins), remove your silicon carrier with sample attached.<br />
<br />
- Optional: To remove wade from the top surface of your sample, or from<br />
<br />
the edges, one effective way is to place the mounted assembly onto a POLOS spinner and, while spinning at ~1500-2000rpm, spray with ACE spray bottle for ~30sec, the ISO & N2 dry. This remove wax on the top without significantly attacking the wax mounting between the samples. You could also attempt to use a cotton<br />
<br />
swab with ACE, although this is typically much less clean.<br />
<br />
- Proceed to apply your surface protection for dicing, eg. Photoresist coating or blue tape etc.<br />
<br />
''Procedure written by Demis D John, 2022-07-04''<br />
<br />
===Dicing Tips===<br />
Harder materials will often require larger diamond particle sizes, and thicker blades will last longer if they are overheating and breaking often.<br />
<br />
It is not uncommon to have to change a blade in the middle of cutting a wafer - the software is set up to allow this easily without aborting the programmed cuts. The "Height Check Rate" in the recipe will check the blade exposure after this many cuts, using the optical height sensor - this allows you to see how quickly the blade is wearing out (as blade exposure reduces).<br />
<br />
Ensuring the cut water jet is hitting at ~7-8 o'clock on the blade and the water jet is being split in two will keep the blade coolest and help prevent breakage. Water sprays should be set to 0.9/0.9/0.9 by default.<br />
<br />
For sapphire dicing (very hard material), it is common to use "double-pass dicing", where the substrate is cut at only half depth (eg. cutting only 150µm deep for a 300µm thick substrate) on the first pass, and then re-cut at the full depth. The blade will need to be changed often, so set your "Height Check Rate" to 1 or 2. This can be very time consuming. 200-300µm thick Sapphire substrates are much easier to cut than 650µm thick - often single-pass dicing is adequate for the thinner substrates.<br />
<br />
===Surface Protection===<br />
<br />
====Photoresist====<br />
Users most often use sacrificial photoresists to protect the surface from accumulating dicing dust. The static-buildup of dielectric films causes the dust to adhere strongly. Ensure that the PR thickness will adequately coat all your exposed topography (eg. use a ≥2µm thick PR for protecting 1.5-2.0µm tall etched features).<br />
<br />
#Choose a photoresist of appropriate thickness, and spin-coat it & soft-bake it according to a standard recipe. <br />
##[[Contact Alignment Recipes|Contact Alignment PR Recipes]]<br />
##[[Stepper Recipes|Stepper PR Recipes]]<br />
<br />
#Perform your dicing<br />
#Remove the die from the UV release tape (60sec UV Exposure)<br />
#Strip the PR from each die in Acetone and ISO & N2 dry. We recommend to use ACE/ISO squirt bottles on each die individually to ensure the particles on the PR surface don’t land and stick to the chip surface.<br />
<br />
====Blue Tape====<br />
Alternatively our low-tack residue-free Blue tape can be used to protect the die surface. Blue tape removal is easy for large die, but does require manual removal from each die, and eliminates sample exposure to solvents.<br />
<br />
The very edges of the die may accumulate a bit more dicing dust due to the tape delaminating slightly during dicing. Plan for about 50-100µm of edge clearance on each die.<br />
<br />
==[[Wafer Bonder (Logitech WBS7)]]==<br />
This tool is used for bonding samples to Silicon carrier wafers with CrystalBond wax.<br />
<br />
*[[Logitech WBS7 - Procedure for Wax Mounting with bulk Crystalbond Stick|Wax Mounting Procedure, with bulk Crystalbond Wax]] - Recommended, works for most applications.<br />
*[[Logitech WBS7 - Procedure for Wax Mounting with Spin-On Crystalbond|Wax Mounting Procedure, with Spin-On Crystalbond]] - if very thin/high uniformity (≤5µm) is required.<br />
<br />
==[[Automated Wafer Cleaver (Loomis LSD-155LT)]]==<br />
This tool is used for scribe and break of your samples. <br />
<br />
*Recommended recipes, a starting point for most applications.<br />
*<br />
<br />
{| class="wikitable"<br />
<br />
|}</div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:ICP_-1_Standard_Etch_Recipes.pdf&diff=161260File:ICP -1 Standard Etch Recipes.pdf2023-08-22T17:52:34Z<p>Sawyer l: Sawyer l uploaded a new version of File:ICP -1 Standard Etch Recipes.pdf</p>
<hr />
<div></div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=ICP_Etch_1_(Panasonic_E646V)&diff=161251ICP Etch 1 (Panasonic E646V)2023-08-17T18:11:24Z<p>Sawyer l: </p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=ICP2.jpg<br />
|type = Dry Etch<br />
|super= Lee Sawyer<br />
|super2= Don Freeborn<br />
|location=Bay 2<br />
|description = ICP Etching and Ashing Multi-Chamber Tool<br />
|manufacturer = Panasonic Factory Solutions, Japan<br />
|materials = <br />
|toolid=22<br />
}} <br />
==About==<br />
<br />
This is a three-chamber tool for etching of a variety of materials. <br />
<br />
Chamber one "Etch Chamber" is configured as an ICP etching tool with 1000 W ICP power, 500 W RF substrate power, and RT - 80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching. <br />
<br />
This chamber has the following dedicated gas sources: Cl<sub>2</sub>, BCl<sub>3</sub>, and O<sub>2</sub> <br />
<br />
The chamber also has the following gas sources, where two of the lines must be manually switched between the two options shown (gasses can't be used simultaneously): N<sub>2</sub>/He, CHF<sub>3</sub>/Ar and CF<sub>4</sub> /SF<sub>6</sub> <br />
<br />
The system can be used to etch a variety of materials from SiO<sub>2</sub> to metals to compound semiconductors. The chamber is evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, and is load-locked for fast pump down. <br />
<br />
The in-situ laser monitor installed on the etch chamber allows for repeatable etches and endpoint detection via continuous optical monitoring of the wafer reflectivity in a user-determined location, through a porthole on the chamber. <br />
<br />
Chamber two, "Ashing Chamber" is a 2000 W ICP chamber configures for plasma "ashing" of photoresist and other materials such as BCB. The substrate is not biased for isotropic etching, and the chamber has CF<sub>4</sub> and O<sub>2</sub> for the gases. This is especially well-suited for omni-directional etching of photoresist/PR removal, or BCB etch-back. <br />
<br />
Chamber three "Rinse Chamber" is a DI rinsing chamber that is not used/offline. <br />
<br />
The system accepts 6” wafers with SEMI-std. flats. Users often mount smaller pieces to the wafers, usually with easily removable oil to improve uniform heat-sinking. <br />
<br />
In Automatic mode, multiple wafers can be run through automatically with the cassette-based system.<br />
<br />
==Detailed Specifications==<br />
<br />
*1000 W ICP source, 500 W RF Sample Bias Source in etching chamber<br />
*Multiple 6” diameter wafer capable system<br />
*Pieces possible by mounting to 6” wafer<br />
<br />
<u>Etch Chamber:</u><br />
<br />
*Optimal Emission Monitoring<br />
*Etch pressure from 0.1 Pa to 5 Pa (0.75 mT - 37.5 mT)<br />
*Cl<sub>2</sub>, BCl<sub>3</sub>, O<sub>2,</sub> (CHF<sub>3</sub> or Ar), (CF<sub>4</sub> or SF<sub>6</sub>), and (N<sub>2</sub> or He) in etch chamber<br />
*Room Temp - 80°C sample temperature for etching. Default 12°C Chuck Temperature.<br />
*Laser Etch Monitoring: [[Laser Etch Monitoring|Intellemetrics LEP 500]]<br />
<br />
<u>Ashing Chamber:</u><br />
<br />
*2000 W ICP ashing chamber<br />
*RT - 250°C sample temperature for ashing<br />
*Ashing pressures 50 mT - 500 mT<br />
*O<sub>2</sub>, N<sub>2</sub>, CF<sub>4</sub>, H<sub>2</sub>O Vapor for ashing chamber<br />
*Room Temp. to 270°C etching. Default 50°C.<br />
<br />
==Documentation==<br />
<br />
*[https://wiki.nanotech.ucsb.edu/w/images/0/0a/ICP_-1_Gas_Change_CF4-SF6-CF4.pdf]{{file|Panasonic 1 instructions.pdf|Panasonic _1_instructions.pdf}}<br />
*[https://wiki.nanotech.ucsb.edu/w/images/0/0a/ICP_-1_Gas_Change_CF4-SF6-CF4.pdf ICP #1 Gas Change Procedure: CF<sub>4</sub>-SF<sub>6</sub>-CF<sub>4</sub>]<br />
*[https://wiki.nanotech.ucsb.edu/w/images/8/8c/ICP_-1_Gas_Change_CHF3-Ar.pdf ICP #1 Gas Change Procedure: CHF<sub>3</sub>-Ar-CHF<sub>3</sub>]<br />
*[https://wiki.nanotech.ucsb.edu/w/images/f/fa/ICP_-1_Gas_Change_N2-He-N2.pdf ICP #1 Gas Change Procedure: N<sub>2</sub>-He-N<sub>2</sub>]<br />
*[https://wiki.nanotech.ucsb.edu/w/images/3/3a/ICP_-1_Rules_%26_Important_Notes.pdf ICP #1 Rules and Important Notes]<br />
*[https://wiki.nanofab.ucsb.edu/w/images/4/48/ICP_-1_Standard_Etch_Recipes.pdf ICP #1 Standard Recipes]<br />
*[https://wiki.nanotech.ucsb.edu/w/images/d/de/ICP_-1_Wafer_Type_Change.pdf ICP #1 Wafer Type Change Procedure]<br />
*[[Laser Etch Monitoring|Laser Etch Monitor procedures]]<br />
<br />
==Recipes==<br />
<br />
*[[ICP Etching Recipes#ICP Etch 1 .28Panasonic E626I.29|'''Recipes > Dry Etching > ICP Etch 1''']] page lists all qualified and contributed recipes for this tool.<br />
**Starting point recipes for ICP#1<br />
*[[ICP Etching Recipes#Process Control Data .28Panasonic 1.29|Process Control Data]]<br />
**''Historical Data'' records "calibration" etches to test tool performance.<br />
*The [[Dry Etching Recipes|'''Recipes > Dry Etching Recipes''']] <br />
**Master table lists all contributed '''dry etches vs etched materials''' across tools.</div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=ICP_Etch_1_(Panasonic_E646V)&diff=161250ICP Etch 1 (Panasonic E646V)2023-08-17T18:10:44Z<p>Sawyer l: Added standard etch recipes to documentation section</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=ICP2.jpg<br />
|type = Dry Etch<br />
|super= Lee Sawyer<br />
|super2= Don Freeborn<br />
|location=Bay 2<br />
|description = ICP Etching and Ashing Multi-Chamber Tool<br />
|manufacturer = Panasonic Factory Solutions, Japan<br />
|materials = <br />
|toolid=22<br />
}} <br />
==About==<br />
<br />
This is a three-chamber tool for etching of a variety of materials. <br />
<br />
Chamber one "Etch Chamber" is configured as an ICP etching tool with 1000 W ICP power, 500 W RF substrate power, and RT - 80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching. <br />
<br />
This chamber has the following dedicated gas sources: Cl<sub>2</sub>, BCl<sub>3</sub>, and O<sub>2</sub> <br />
<br />
The chamber also has the following gas sources, where two of the lines must be manually switched between the two options shown (gasses can't be used simultaneously): N<sub>2</sub>/He, CHF<sub>3</sub>/Ar and CF<sub>4</sub> /SF<sub>6</sub> <br />
<br />
The system can be used to etch a variety of materials from SiO<sub>2</sub> to metals to compound semiconductors. The chamber is evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, and is load-locked for fast pump down. <br />
<br />
The in-situ laser monitor installed on the etch chamber allows for repeatable etches and endpoint detection via continuous optical monitoring of the wafer reflectivity in a user-determined location, through a porthole on the chamber. <br />
<br />
Chamber two, "Ashing Chamber" is a 2000 W ICP chamber configures for plasma "ashing" of photoresist and other materials such as BCB. The substrate is not biased for isotropic etching, and the chamber has CF<sub>4</sub> and O<sub>2</sub> for the gases. This is especially well-suited for omni-directional etching of photoresist/PR removal, or BCB etch-back. <br />
<br />
Chamber three "Rinse Chamber" is a DI rinsing chamber that is not used/offline. <br />
<br />
The system accepts 6” wafers with SEMI-std. flats. Users often mount smaller pieces to the wafers, usually with easily removable oil to improve uniform heat-sinking. <br />
<br />
In Automatic mode, multiple wafers can be run through automatically with the cassette-based system.<br />
<br />
==Detailed Specifications==<br />
<br />
*1000 W ICP source, 500 W RF Sample Bias Source in etching chamber<br />
*Multiple 6” diameter wafer capable system<br />
*Pieces possible by mounting to 6” wafer<br />
<br />
<u>Etch Chamber:</u><br />
<br />
*Optimal Emission Monitoring<br />
*Etch pressure from 0.1 Pa to 5 Pa (0.75 mT - 37.5 mT)<br />
*Cl<sub>2</sub>, BCl<sub>3</sub>, O<sub>2,</sub> (CHF<sub>3</sub> or Ar), (CF<sub>4</sub> or SF<sub>6</sub>), and (N<sub>2</sub> or He) in etch chamber<br />
*Room Temp - 80°C sample temperature for etching. Default 12°C Chuck Temperature.<br />
*Laser Etch Monitoring: [[Laser Etch Monitoring|Intellemetrics LEP 500]]<br />
<br />
<u>Ashing Chamber:</u><br />
<br />
*2000 W ICP ashing chamber<br />
*RT - 250°C sample temperature for ashing<br />
*Ashing pressures 50 mT - 500 mT<br />
*O<sub>2</sub>, N<sub>2</sub>, CF<sub>4</sub>, H<sub>2</sub>O Vapor for ashing chamber<br />
*Room Temp. to 270°C etching. Default 50°C.<br />
<br />
==Documentation==<br />
<br />
*[https://wiki.nanotech.ucsb.edu/w/images/0/0a/ICP_-1_Gas_Change_CF4-SF6-CF4.pdf]{{file|Panasonic 1 instructions.pdf|Panasonic _1_instructions.pdf}}<br />
*[https://wiki.nanotech.ucsb.edu/w/images/0/0a/ICP_-1_Gas_Change_CF4-SF6-CF4.pdf ICP #1 Gas Change Procedure: CF<sub>4</sub>-SF<sub>6</sub>-CF<sub>4</sub>]<br />
*[https://wiki.nanotech.ucsb.edu/w/images/8/8c/ICP_-1_Gas_Change_CHF3-Ar.pdf ICP #1 Gas Change Procedure: CHF<sub>3</sub>-Ar-CHF<sub>3</sub>]<br />
*[https://wiki.nanotech.ucsb.edu/w/images/f/fa/ICP_-1_Gas_Change_N2-He-N2.pdf ICP #1 Gas Change Procedure: N<sub>2</sub>-He-N<sub>2</sub>]<br />
*[https://wiki.nanotech.ucsb.edu/w/images/3/3a/ICP_-1_Rules_%26_Important_Notes.pdf ICP #1 Rules and Important Notes]<br />
*[https://wiki.nanofab.ucsb.edu/w/images/4/48/ICP_-1_Standard_Etch_Recipes.pdf ICP #1 Standard Etch Recipes]<br />
*[https://wiki.nanotech.ucsb.edu/w/images/d/de/ICP_-1_Wafer_Type_Change.pdf ICP #1 Wafer Type Change Procedure]<br />
*[[Laser Etch Monitoring|Laser Etch Monitor procedures]]<br />
<br />
==Recipes==<br />
<br />
*[[ICP Etching Recipes#ICP Etch 1 .28Panasonic E626I.29|'''Recipes > Dry Etching > ICP Etch 1''']] page lists all qualified and contributed recipes for this tool.<br />
**Starting point recipes for ICP#1<br />
*[[ICP Etching Recipes#Process Control Data .28Panasonic 1.29|Process Control Data]]<br />
**''Historical Data'' records "calibration" etches to test tool performance.<br />
*The [[Dry Etching Recipes|'''Recipes > Dry Etching Recipes''']] <br />
**Master table lists all contributed '''dry etches vs etched materials''' across tools.</div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:ICP_-1_Standard_Etch_Recipes.pdf&diff=161249File:ICP -1 Standard Etch Recipes.pdf2023-08-17T18:09:28Z<p>Sawyer l: </p>
<hr />
<div></div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=Dicing_Saw_(ADT)&diff=161229Dicing Saw (ADT)2023-08-03T13:33:25Z<p>Sawyer l: SOP rev</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=ADT.jpg<br />
|type = Packaging<br />
|super= Lee Sawyer<br />
|super2= Aidan Hopkins<br />
|location=Backend Lab: ESB 1111<br />
|description = ADT Dicing Saw<br />
|model = ADT 7100<br />
|manufacturer = Advanced Dicing Technologies Ltd.<br />
|materials = <br />
|toolid=49<br />
}} <br />
==About==<br />
The ADT 7100 Dicing Saw is optimized for multi-angle dicing of thin, tight tolerance products up to 200 mm x 200 mm. It is currently setup for dicing up to 8” diameter wafers. Check the [https://wiki.nanotech.ucsb.edu/w/index.php?title=Packaging_Recipes#Dicing_Saw_Recipes_.28ADT_7100.29 Dicing Saw Recipes page] for the blades we currently stock.<br />
<br />
An ADT WM-966 tape applicator & Ultron Systems UH104-8 UV lamp system is used to apply UV-release tape for securing die during dicing.<br />
<br />
Contact the tool supervisor for blades and dicing frames for your group.<br />
<br />
==Detailed Specifications==<br />
<br />
*Maximum Wafer Size: 8"<br />
*Parts mounted to UV-release tape for cutting<br />
*Automated cut maps at multiple angles (0° and 90° typical)<br />
*~few micron alignment to on-wafer features.<br />
*Thermocarbon Resnoid dicing blades provided by staff<br />
<br />
==Operating Procedures==<br />
<br />
*[https://wiki.nanofab.ucsb.edu/w/images/b/b0/ADT_SOP_Rev_I.pdf ADT Dicing Saw Standard Operating Procedure]<br />
*[https://wiki.nanotech.ucsb.edu/w/images/0/01/Tape_Station_SOP_Rev_A.pdf Tape Station Standard Operating Procedure]<br />
*[[ADT 7100 - Recovering an Old Recipe (2019)|Recovering an Old Recipe]]<br />
<br />
<br />
==Recipes==<br />
<br />
*Recipes > Packaging > '''[[Packaging Recipes#Dicing Saw Recipes .28ADT 7100.29|Dicing Saw Recipes (ADT 7100)]]'''<br />
<br />
Be sure to also see the recipes for protecting your sample from dicing dust, and mounting/unmounting.</div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:ADT_SOP_Rev_I.pdf&diff=161228File:ADT SOP Rev I.pdf2023-08-03T13:32:41Z<p>Sawyer l: </p>
<hr />
<div></div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=Contact_Aligner_(SUSS_MA-6)&diff=161226Contact Aligner (SUSS MA-6)2023-08-02T16:34:50Z<p>Sawyer l: Minor SOP edit (typo)</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=ContactAligner.jpg<br />
|type = Lithography<br />
|super= Lee Sawyer<br />
|super2= Don Freeborn<br />
|phone=(805) 893-2123<br />
|location=Bay 7<br />
|email=lee_sawyer@ucsb.edu<br />
|description = Mask Aligner/Bond Aligner (MA/BA-6)<br />
|manufacturer = Karl Suss America<br />
|materials = <br />
|toolid=33<br />
}} <br />
==About==<br />
This system is a dual-use mask aligner and wafer-bond aligner, used for contact and proximity exposure processes. System is motorized for contact/proximity, microscope objective movement and exposure, with a computer used to display the microscope image for regular and backside alignment overlay. Exposures can be performed with gaps programmable from 10 um to 300 um in 1 um increments. Automatic wedge error compensation (WEC) is used to ensure that the mask and wafer are parallel. The lamp is a 350 W Hg-Arc lamp, providing significant power in the g-h-and i-line regime. Integrated light level sensing ensures proper exposure doses as the lamp degrades.<br />
<br />
Lithography can be performed on wafers from 2” to 6” in diameter. Piece parts are better handled on the [[Suss Aligners (SUSS MJB-3)|MJB-3 aligners]]. <br />
<br />
The system is fitted with visible, motorize, bottom-side optics for back-side alignment capability. Backside alignment is performed with an automated image capture system, at 5x, 10x, or 20x magnification. The backside alignment system takes images of the photomask from the ''underside'', then overlays that image digitally with the wafer face-down, again aligning with the cameras on the underside. <br />
<br />
Bonding alignment can be performed on 3” to 6” wafers. The bond alignment is performed with special fixturing to allow aligned samples to be transferred to the [[Wafer Bonder (SUSS SB6-8E)|Karl-Suss SB6 system]] - contact the supervisor beforehand so the bond alignment fixturing can be installed.<br />
<br />
==Detailed Specifications==<br />
<br />
*350 W Hg arc lamp, broadband exposure with Suss UV400 Optics (350 - 450 nm)<br />
*Resolution (per Manufacturer*):<br />
**''<nowiki>*</nowiki> Resolution achieved on 150 mm Si-wafer with 1.2 µm thick AZ 4110''<br />
**Vacuum Contact: <0.8 µm<br />
**Hard Contact: <1.5 µm<br />
**Soft Contact: <2.5 µm<br />
**Proximity (@ 20 µm): <3.0µm<br />
<br />
*Topside alignment accuracy: down to 0.5 µm<br />
*Backside alignment accuracy: down to 1 µm<br />
*Stage mechanical accuracy: 0.1 μm (step size)<br />
<br />
*Automatic Light Intensity Drift Compensation:<br />
**Channel 1 is calibrated to 9 mW/cm² at 365 nm<br />
**Channel 2 is calibrated to 15 mW/cm² at 405 nm<br />
*Programmable proximity exposure gap of 10-300 µm in 1 µm steps<br />
*Programmable alignment gap of 1 - 999 µm in 1 µm steps<br />
*Stored video imaging for overlay alignment<br />
*Visible Back-Side Alignment System<br />
*Lithography for 1” to 6” diameter wafers - '''6 mm maximum thickness'''<br />
*Pieces down to 5 x 5 mm - Please be aware of the stage movement range: X ± 10mm, Y ± 5 mm<br />
*TSA objective separation: 32 - 160 mm<br />
*BSA objective separation: 15 - 100 mm<br />
*Chuck Sizes:<br />
**1" square (or wafer) and smaller, backside alignment capability<br />
**3" wafer, no backside alignment<br />
**4" wafer, backside alignment capability<br />
**6" wafer, backside alignment capability<br />
*Mask Holder Sizes:<br />
**3"<br />
**4"<br />
**5" mask - can be modified to support a 6" mask but exposure area will still be ~4" diameter (see Staff)<br />
**7"<br />
*Bond alignment for 4” to 6” wafers, integrates with [[Wafer Bonder (SUSS SB6-8E)|SB6 bonder]]<br />
*Other wafer sizes can be discussed with staff<br />
<br />
==Documentation==<br />
<br />
*[https://wiki.nanofab.ucsb.edu/w/images/4/41/MA-6_SOP_Rev_D.pdf MA6 Standard Operating Procedure, includes BSA]<br />
*[https://wiki.nanotech.ucsb.edu/w/images/7/75/MA-6_Exp_Mode_Visual_Aid.pdf MA6 Exposure Mode Information]<br />
*[[MA6 Backside Alignment - Allowed Mark Locations]]<br />
*[https://wiki.nanotech.ucsb.edu/w/images/4/40/BA6_SOP_Rev_A.pdf BA6 Standard Operating Procedure]<br />
<br />
===CAD Files===<br />
<br />
*Male/female alignment marks (GDS): [[Media:MA6-FrontBack AlignMarks only.gds|MA6-FrontBack_AlignMarks_only.gds]]<br />
<br />
==Recipes==<br />
<br />
*Recipes > Lithography > '''[[Contact Alignment Recipes#Contact Aligner .28SUSS MA-6.29|Suss MA6]]'''<br />
**''Also lists the exposure powers.''</div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:MA-6_SOP_Rev_D.pdf&diff=161225File:MA-6 SOP Rev D.pdf2023-08-02T16:33:46Z<p>Sawyer l: Sawyer l uploaded a new version of File:MA-6 SOP Rev D.pdf</p>
<hr />
<div></div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=RIE_2_(MRC)&diff=161216RIE 2 (MRC)2023-07-21T14:55:06Z<p>Sawyer l: Updated SOP</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=RIE2.jpg<br />
|type = Dry Etch<br />
|super= Lee Sawyer<br />
|super2= Aidan Hopkins<br />
|phone= 805-893-2123<br />
|location=Bay 2<br />
|email=lee_sawyer@ucsb.edu<br />
|description = RIE #2 Methane/Hydrogen-Based System<br />
|manufacturer = Materials Research Corporation (MRC)<br />
|materials = <br />
|toolid=25<br />
}} <br />
==About==<br />
<br />
<br />
This is a Materials Research Corporation RIE-51 parallel plate, 13.56 Mhz system used primarily for the etching of InP with CH<sub>4</sub>/H<sub>2</sub>/Ar gases, although it can be used to etch As- and Sb-based III-V compounds and a variety of II-VI semiconductors as well. For Al-containing compounds and II-VI compounds, high bias power is required. Tool features include: six inch diameter water cooled cathode/substrate platform, pyrex cylinder for plasma confinement and gas flow control, adjustable cathode-anode spacing, fixed bias or power control and HeNe laser etch monitor with chart recorder. It is diffusion pumped and has no loadlock. Various etching applications have included: in-plane lasers/facets, InP-based HBTs, FET gate recessing, InP-based quantum microcavities, Bragg-Fresnel x-ray lenses and waveguides. <br />
<br />
RIE of InP and related compounds can be achieved with a hydride-based process chemistry of methane/hydrogen with an etching mechanism due to a "reverse" metalorganic CVD reaction. Because both etching and deposition occur simultaneously, it is important to use the proper gas flows and to periodically remove any polymer reaction by-products deposited on the non-etched (mask) surfaces. (This system has an additional flow circuit in order to bleed in small amounts, &lt;1 sccm, of O<sub>2</sub>). Alternatively, one can perform cyclic etching between MHA and O<sub>2</sub> to keep polymer formation to a minimum. With this technique selectivity is quite high and anisotropic etching can be achieved. While a metal, dielectric or photoresist may be used as a mask, photoresist should only be used at low bias voltages in order to avoid mask pattern distortions due to reflow. A precoat etch should be done before etching to condition the chamber. <br />
<br />
==Detailed Specifications==<br />
<br />
*Etch gases include: CH<sub>4</sub>, H<sub>2</sub>, Ar and O<sub>2</sub><br />
*Low 1 E -6 ultimate chamber pressure<br />
*13.56 Mhz excitation frequency<br />
*Sample size limited to approximately 2 inches<br />
*HeNe and IR laser monitoring for endpoint<br />
*Automatic tuning network<br />
*DC Bias or RF power control<br />
*Masking materials include: Ni, SiON, photoresist (limited to low bias/power)<br />
*Typical etch conditions for InGaAsP: <br />
**75 mT (CH<sub>4</sub>/H<sub>2</sub>/Ar&nbsp;: 4/20/10 sccm)<br />
**450v bias<br />
**~ 45 nm/min. etch rate<br />
<br />
==Documentation==<br />
<br />
*[https://wiki.nanofab.ucsb.edu/w/images/8/84/RIE_2_SOP_Rev_D.pdf RIE #2 Standard Operating Procedure]</div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:RIE_2_SOP_Rev_D.pdf&diff=161215File:RIE 2 SOP Rev D.pdf2023-07-21T14:54:30Z<p>Sawyer l: </p>
<hr />
<div></div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=Suss_Aligners_(SUSS_MJB-3)&diff=161123Suss Aligners (SUSS MJB-3)2023-05-26T16:41:45Z<p>Sawyer l: Add IR Alignment Mode Conversion SOP</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=SussAligner.jpg<br />
|type = Lithography<br />
|super= Lee Sawyer<br />
|super2= Don Freeborn<br />
|phone=(805) 893-2123<br />
|location=Bay 6<br />
|email=lee_sawyer@ucsb.edu<br />
|description = Mask Aligner - MJB 3 UV400<br />
|manufacturer = Karl Suss America<br />
|materials = <br />
}} <br />
==About==<br />
We have two high-performance mask aligners for contact exposure processes. They are manual mechanical systems alignment, contact/proximity, with exposure shuttered by a timer. The resolution (depending on contact mode, optics and exposure wavelength and "operator technique") is into the submicron region. (See descriptions for our "Std." and "IR" units). <br />
<br />
Our units are configured for the near-UV window (365 and 405 nm). All units have the "vacuum contact" option extending resolution to ~0.7 microns. Higher resolution optic systems that can be supplied by Suss are given below. The standard soft and hard contact modes of mechanical and pneumatic pressure respectively, give resolution to ~1 micron. <br />
<br />
Exposures can be done on substrates from small "piece parts" of less than 1 cm square to substrates of 3 inch diameter or square. Masks up to 4 inches in size can be used although only 3” x 3” of this area is usable. A 4” wafer can be exposed with the system. However, only 3” x 3” will be exposed on the wafer and vacuum mode is unavailable.<br />
<br />
====Backside Alignment====<br />
On the Standard MJB-3, special black chucks may be used for optically transparent materials, allowing you to view through the wafer.<br />
<br />
For backside alignment through opaque materials such as Si or GaAs, our IR aligner has backside infrared illumination (halogen bulb) through these black chucks. A Hammamatsu IR camera is installed to view the infrared image.<br />
<br />
Using a filter, the IR system can be configured for I-line (350 nm) only, assisting in resolution. <br />
<br />
==Detailed Specifications==<br />
<br />
*Wafer size: 3" max. for vacuum mode; 4” for soft contact (3” x 3” exposure area)<br />
*Substrate size: 3" x 3" max.<br />
*Wafer / substrate thickness: 0-4.5 mm<br />
*Exposure optics:<br />
**Standard unit (Aligner #1): 350-450 nm/200 W mercury lamp<br />
**IR unit: 280-450 nm/200 W mercury lamp (can filter to 350 nm)<br />
*Additional manufacturer options (none installed on our systems):<br />
**DUV (polychromatic): 240-260 nm/350 W Cd-Xe lamp; 0.2 micron resolution (PMMA)<br />
**DUV (monochromatic): 248 nm/KrF excimer laser; 0.3 micron resolution (PMMA)<br />
**193 nm/ArF excimer laser; 0.2 micron resolution (PMMA)<br />
*Uniformity:<br />
**±3% over 2" diameter<br />
**±5% over 3" diameter<br />
<br />
===IR Aligner===<br />
<br />
*Backside illumination with halogen bulb & transparent chuck<br />
*Hammamatsu infrared camera and monitor<br />
*Through-wafer alignment and/or inspection.<br />
<br />
===Exposure Optical Spectrum with No Filter===<br />
[[image:DUV-Spectra-No-Filter.png|thumb|none|Aligner with No Filter]]<br />
===Exposure Optical Spectrum with Filter for i-line Exposure===<br />
[[image:DUV-Spectra-With-Filter.png|thumb|none|302x302px|Aligner with Filter for i-line Exposure]]<br />
==Documentation==<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/d/de/MJB_3_SOP.pdf MJB-3 Standard Operating Procedure]<br />
*[https://wiki.nanotech.ucsb.edu/w/images/7/70/MJB_3_IR_Camera_SOP_Rev_B.pdf MJB-3 IR Camera Operation]<br />
*[https://wiki.nanotech.ucsb.edu/w/images/1/11/MJB_3_IR_Alignment_Mode_Conversion.pdf MJB-3 IR Alignment Mode Conversion]<br />
<br />
===CAD Files===<br />
<br />
*Male/female alignment marks (GDS): [[Media:MA6-FrontBack AlignMarks only.gds|MA6-FrontBack_AlignMarks_only.gds]]<br />
<br />
==Recipes==<br />
<br />
*Recipes > Lithography > Photolithography Recipes > [[Contact Alignment Recipes#Suss Aligners .28SUSS MJB-3.29|'''<u>SUSS MJB-3</u>''']] <br />
**''Starting recipes for various I-Line photoresists, positive and negative.''</div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=Suss_Aligners_(SUSS_MJB-3)&diff=161122Suss Aligners (SUSS MJB-3)2023-05-26T16:38:26Z<p>Sawyer l: Added IR Camera SOP</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=SussAligner.jpg<br />
|type = Lithography<br />
|super= Lee Sawyer<br />
|super2= Don Freeborn<br />
|phone=(805) 893-2123<br />
|location=Bay 6<br />
|email=lee_sawyer@ucsb.edu<br />
|description = Mask Aligner - MJB 3 UV400<br />
|manufacturer = Karl Suss America<br />
|materials = <br />
}} <br />
==About==<br />
We have two high-performance mask aligners for contact exposure processes. They are manual mechanical systems alignment, contact/proximity, with exposure shuttered by a timer. The resolution (depending on contact mode, optics and exposure wavelength and "operator technique") is into the submicron region. (See descriptions for our "Std." and "IR" units). <br />
<br />
Our units are configured for the near-UV window (365 and 405 nm). All units have the "vacuum contact" option extending resolution to ~0.7 microns. Higher resolution optic systems that can be supplied by Suss are given below. The standard soft and hard contact modes of mechanical and pneumatic pressure respectively, give resolution to ~1 micron. <br />
<br />
Exposures can be done on substrates from small "piece parts" of less than 1 cm square to substrates of 3 inch diameter or square. Masks up to 4 inches in size can be used although only 3” x 3” of this area is usable. A 4” wafer can be exposed with the system. However, only 3” x 3” will be exposed on the wafer and vacuum mode is unavailable.<br />
<br />
====Backside Alignment====<br />
On the Standard MJB-3, special black chucks may be used for optically transparent materials, allowing you to view through the wafer.<br />
<br />
For backside alignment through opaque materials such as Si or GaAs, our IR aligner has backside infrared illumination (halogen bulb) through these black chucks. A Hammamatsu IR camera is installed to view the infrared image.<br />
<br />
Using a filter, the IR system can be configured for I-line (350 nm) only, assisting in resolution. <br />
<br />
==Detailed Specifications==<br />
<br />
*Wafer size: 3" max. for vacuum mode; 4” for soft contact (3” x 3” exposure area)<br />
*Substrate size: 3" x 3" max.<br />
*Wafer / substrate thickness: 0-4.5 mm<br />
*Exposure optics:<br />
**Standard unit (Aligner #1): 350-450 nm/200 W mercury lamp<br />
**IR unit: 280-450 nm/200 W mercury lamp (can filter to 350 nm)<br />
*Additional manufacturer options (none installed on our systems):<br />
**DUV (polychromatic): 240-260 nm/350 W Cd-Xe lamp; 0.2 micron resolution (PMMA)<br />
**DUV (monochromatic): 248 nm/KrF excimer laser; 0.3 micron resolution (PMMA)<br />
**193 nm/ArF excimer laser; 0.2 micron resolution (PMMA)<br />
*Uniformity:<br />
**±3% over 2" diameter<br />
**±5% over 3" diameter<br />
<br />
===IR Aligner===<br />
<br />
*Backside illumination with halogen bulb & transparent chuck<br />
*Hammamatsu infrared camera and monitor<br />
*Through-wafer alignment and/or inspection.<br />
<br />
===Exposure Optical Spectrum with No Filter===<br />
[[image:DUV-Spectra-No-Filter.png|thumb|none|Aligner with No Filter]]<br />
===Exposure Optical Spectrum with Filter for i-line Exposure===<br />
[[image:DUV-Spectra-With-Filter.png|thumb|none|302x302px|Aligner with Filter for i-line Exposure]]<br />
==Documentation==<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/d/de/MJB_3_SOP.pdf MJB-3 Standard Operating Procedure]<br />
*[https://wiki.nanotech.ucsb.edu/w/images/7/70/MJB_3_IR_Camera_SOP_Rev_B.pdf MJB-3 IR Camera Operation]<br />
<br />
===CAD Files===<br />
<br />
*Male/female alignment marks (GDS): [[Media:MA6-FrontBack AlignMarks only.gds|MA6-FrontBack_AlignMarks_only.gds]]<br />
<br />
==Recipes==<br />
<br />
*Recipes > Lithography > Photolithography Recipes > [[Contact Alignment Recipes#Suss Aligners .28SUSS MJB-3.29|'''<u>SUSS MJB-3</u>''']] <br />
**''Starting recipes for various I-Line photoresists, positive and negative.''</div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:MJB_3_IR_Camera_SOP_Rev_B.pdf&diff=161121File:MJB 3 IR Camera SOP Rev B.pdf2023-05-26T16:36:33Z<p>Sawyer l: Sawyer l uploaded a new version of File:MJB 3 IR Camera SOP Rev B.pdf</p>
<hr />
<div></div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=E-Beam_2_(Custom)&diff=161089E-Beam 2 (Custom)2023-05-10T17:35:36Z<p>Sawyer l: SOP rev</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=IMG 5388.jpg<br />
|type = Vacuum Deposition<br />
|super= Lee Sawyer<br />
|super2= Don Freeborn<br />
|phone=(805)839-2123<br />
|location=Bay 3<br />
|email=lee_sawyer@ucsb.edu<br />
|description = Electron-Beam Evaporation System<br />
|manufacturer = Temescal<br />
|materials = <br />
|toolid=8<br />
}} <br />
==About==<br />
This electron-beam evaporation system is used for the controlled deposition of thin dielectric films. The films are evaporated from a wide variety of solid sources. The most common dielectrics deposited are: SiO<sub>2</sub>, ITO, TiO<sub>2</sub>, Ta<sub>2</sub>O<sub>5</sub>, and SrF<sub>2</sub>. Other materials may be evaporated upon request. Oxygen gas can be bled into the system during deposition to try to maintain the stoichiometry during deposition. Fixturing for heating the substrate can also be used. A crystal thickness monitor is used to control the deposition thickness. The dielectrics deposited by this system are typically used for optical coatings (anti-reflective), electrical insulators, and reactive ion etching masks. Samples up to ~ 5" diameter can be placed into this system for evaporation. Typical deposition rates are several Angstroms/second.<br />
<br />
==Detailed Specifications==<br />
<br />
*Temescal CV-6SXL 10 kV power supply<br />
*Temescal 4-pocket Series 260 E-Beam turret source<br />
*Temescal TemEbeam Controller (EBC); controls the high voltage power supply, electron beam position (up to 8 sweep patterns per pocket), and source pocket position<br />
*Inficon IC/5 Thin Film Deposition Controller<br />
*Cryo-pumped system with low E-7 ultimate base pressure<br />
*Automatic vacuum sequencing via CHA Auto-Tech II<br />
*Crystal thickness monitoring<br />
*Sample size: up to 5” diameter non-heated, 4" diameter heated<br />
*'''Heated''' sample holder (programmable), sample temps up to 370°C<br />
*'''Oxygen''' gas MFC for maintaining oxide stoichiometry<br />
<br />
==Documentation==<br />
<br />
*[https://wiki.nanotech.ucsb.edu/w/images/5/57/EB2_SOP_Rev_G.pdf E-Beam #2 Standard Operating Procedure]<br />
<br />
==Recipes==<br />
<br />
*[[E-Beam Evaporation Recipes#E-Beam%202%20.28Custom.29|Recipes > Vac. Deposition > '''E-Beam 2 (Custom)''']]<br />
**Lists the characterized recipes for this machine - other materials may also be used with staff permission.</div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:EB2_SOP_Rev_G.pdf&diff=161088File:EB2 SOP Rev G.pdf2023-05-10T17:34:57Z<p>Sawyer l: </p>
<hr />
<div></div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=Dicing_Saw_(ADT)&diff=161022Dicing Saw (ADT)2023-03-28T15:46:50Z<p>Sawyer l: Updated tool location</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=ADT.jpg<br />
|type = Packaging<br />
|super= Lee Sawyer<br />
|super2= Aidan Hopkins<br />
|location=Backend Lab: ESB 1111<br />
|description = ADT Dicing Saw<br />
|model = ADT 7100<br />
|manufacturer = Advanced Dicing Technologies Ltd.<br />
|materials = <br />
|toolid=49<br />
}} <br />
==About==<br />
The ADT 7100 Dicing Saw is optimized for multi-angle dicing of thin, tight tolerance products up to 200 mm x 200 mm. It is currently setup for dicing up to 8” diameter wafers. Check the [https://wiki.nanotech.ucsb.edu/w/index.php?title=Packaging_Recipes#Dicing_Saw_Recipes_.28ADT_7100.29 Dicing Saw Recipes page] for the blades we currently stock.<br />
<br />
An ADT WM-966 tape applicator & Ultron Systems UH104-8 UV lamp system is used to apply UV-release tape for securing die during dicing.<br />
<br />
Contact the tool supervisor for blades and dicing frames for your group.<br />
<br />
==Detailed Specifications==<br />
<br />
*Maximum Wafer Size: 8"<br />
*Parts mounted to UV-release tape for cutting<br />
*Automated cut maps at multiple angles (0° and 90° typical)<br />
*~few micron alignment to on-wafer features.<br />
*Thermocarbon Resnoid dicing blades provided by staff<br />
<br />
==Operating Procedures==<br />
<br />
*[https://wiki.nanotech.ucsb.edu/w/images/a/a5/ADT_SOP_Rev_H.pdf ADT Dicing Saw Standard Operating Procedure]<br />
*[https://wiki.nanotech.ucsb.edu/w/images/0/01/Tape_Station_SOP_Rev_A.pdf Tape Station Standard Operating Procedure]<br />
*[[ADT 7100 - Recovering an Old Recipe (2019)|Recovering an Old Recipe]]<br />
<br />
<br />
==Recipes==<br />
<br />
*Recipes > Packaging > '''[[Packaging Recipes#Dicing Saw Recipes .28ADT 7100.29|Dicing Saw Recipes (ADT 7100)]]'''<br />
<br />
Be sure to also see the recipes for protecting your sample from dicing dust, and mounting/unmounting.</div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=ICP_Etch_1_(Panasonic_E646V)&diff=161013ICP Etch 1 (Panasonic E646V)2023-03-21T18:54:04Z<p>Sawyer l: Gas change SOP, minor rev</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=ICP2.jpg<br />
|type = Dry Etch<br />
|super= Lee Sawyer<br />
|super2= Don Freeborn<br />
|location=Bay 2<br />
|description = ICP Etching and Ashing Multi-Chamber Tool<br />
|manufacturer = Panasonic Factory Solutions, Japan<br />
|materials = <br />
|toolid=22<br />
}} <br />
==About==<br />
<br />
This is a three-chamber tool for etching of a variety of materials. <br />
<br />
Chamber one "Etch Chamber" is configured as an ICP etching tool with 1000 W ICP power, 500 W RF substrate power, and RT - 80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching. <br />
<br />
This chamber has the following dedicated gas sources: Cl<sub>2</sub>, BCl<sub>3</sub>, and O<sub>2</sub> <br />
<br />
The chamber also has the following gas sources, where two of the lines must be manually switched between the two options shown (gasses can't be used simultaneously): N<sub>2</sub>/He, CHF<sub>3</sub>/Ar and CF<sub>4</sub> /SF<sub>6</sub> <br />
<br />
The system can be used to etch a variety of materials from SiO<sub>2</sub> to metals to compound semiconductors. The chamber is evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, and is load-locked for fast pump down. <br />
<br />
The in-situ laser monitor installed on the etch chamber allows for repeatable etches and endpoint detection via continuous optical monitoring of the wafer reflectivity in a user-determined location, through a porthole on the chamber. <br />
<br />
Chamber two, "Ashing Chamber" is a 2000 W ICP chamber configures for plasma "ashing" of photoresist and other materials such as BCB. The substrate is not biased for isotropic etching, and the chamber has CF<sub>4</sub> and O<sub>2</sub> for the gases. This is especially well-suited for omni-directional etching of photoresist/PR removal, or BCB etch-back. <br />
<br />
Chamber three "Rinse Chamber" is a DI rinsing chamber that is not used/offline. <br />
<br />
The system accepts 6” wafers with SEMI-std. flats. Users often mount smaller pieces to the wafers, usually with easily removable oil to improve uniform heat-sinking. <br />
<br />
In Automatic mode, multiple wafers can be run through automatically with the cassette-based system.<br />
<br />
==Detailed Specifications==<br />
<br />
*1000 W ICP source, 500 W RF Sample Bias Source in etching chamber<br />
*Multiple 6” diameter wafer capable system<br />
*Pieces possible by mounting to 6” wafer<br />
<br />
<u>Etch Chamber:</u><br />
<br />
*Optimal Emission Monitoring<br />
*Etch pressure from 0.1 Pa to 5 Pa (0.75 mT - 37.5 mT)<br />
*Cl<sub>2</sub>, BCl<sub>3</sub>, O<sub>2,</sub> (CHF<sub>3</sub> or Ar), (CF<sub>4</sub> or SF<sub>6</sub>), and (N<sub>2</sub> or He) in etch chamber<br />
*Room Temp - 80°C sample temperature for etching. Default 12°C Chuck Temperature.<br />
*Laser Etch Monitoring: [[Laser Etch Monitoring|Intellemetrics LEP 500]]<br />
<br />
<u>Ashing Chamber:</u><br />
<br />
*2000 W ICP ashing chamber<br />
*RT - 250°C sample temperature for ashing<br />
*Ashing pressures 50 mT - 500 mT<br />
*O<sub>2</sub>, N<sub>2</sub>, CF<sub>4</sub>, H<sub>2</sub>O Vapor for ashing chamber<br />
*Room Temp. to 270°C etching. Default 50°C.<br />
<br />
==Documentation==<br />
<br />
*[https://wiki.nanotech.ucsb.edu/w/images/0/0a/ICP_-1_Gas_Change_CF4-SF6-CF4.pdf]{{file|Panasonic 1 instructions.pdf|Panasonic _1_instructions.pdf}}<br />
*[https://wiki.nanotech.ucsb.edu/w/images/0/0a/ICP_-1_Gas_Change_CF4-SF6-CF4.pdf ICP #1 Gas Change Procedure: CF<sub>4</sub>-SF<sub>6</sub>-CF<sub>4</sub>]<br />
*[https://wiki.nanotech.ucsb.edu/w/images/8/8c/ICP_-1_Gas_Change_CHF3-Ar.pdf ICP #1 Gas Change Procedure: CHF<sub>3</sub>-Ar-CHF<sub>3</sub>]<br />
*[https://wiki.nanotech.ucsb.edu/w/images/f/fa/ICP_-1_Gas_Change_N2-He-N2.pdf ICP #1 Gas Change Procedure: N<sub>2</sub>-He-N<sub>2</sub>]<br />
*[https://wiki.nanotech.ucsb.edu/w/images/3/3a/ICP_-1_Rules_%26_Important_Notes.pdf ICP #1 Rules and Important Notes]<br />
*[https://wiki.nanotech.ucsb.edu/w/images/d/de/ICP_-1_Wafer_Type_Change.pdf ICP #1 Wafer Type Change Procedure]<br />
*[[Laser Etch Monitoring|Laser Etch Monitor procedures]]<br />
<br />
==Recipes==<br />
<br />
*[[ICP Etching Recipes#ICP Etch 1 .28Panasonic E626I.29|'''Recipes > Dry Etching > ICP Etch 1''']] page lists all qualified and contributed recipes for this tool.<br />
**Starting point recipes for ICP#1<br />
*[[ICP Etching Recipes#Process Control Data .28Panasonic 1.29|Process Control Data]]<br />
**''Historical Data'' records "calibration" etches to test tool performance.<br />
*The [[Dry Etching Recipes|'''Recipes > Dry Etching Recipes''']] <br />
**Master table lists all contributed '''dry etches vs etched materials''' across tools.</div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:ICP_-1_Gas_Change_N2-He-N2.pdf&diff=161012File:ICP -1 Gas Change N2-He-N2.pdf2023-03-21T18:52:09Z<p>Sawyer l: Sawyer l uploaded a new version of File:ICP -1 Gas Change N2-He-N2.pdf</p>
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<div></div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:ICP_-1_Gas_Change_CHF3-Ar.pdf&diff=161011File:ICP -1 Gas Change CHF3-Ar.pdf2023-03-21T18:51:54Z<p>Sawyer l: </p>
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<div></div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:ICP_-1_Gas_Change_CF4-SF6-CF4.pdf&diff=161010File:ICP -1 Gas Change CF4-SF6-CF4.pdf2023-03-21T18:50:30Z<p>Sawyer l: Sawyer l uploaded a new version of File:ICP -1 Gas Change CF4-SF6-CF4.pdf</p>
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<div></div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=Template:Announcements&diff=160998Template:Announcements2023-03-16T21:03:06Z<p>Sawyer l: </p>
<hr />
<div><startfeed /><br />
=====FEI SEM#2 Replacement Project=====<br />
The FEI SEM will be removed and replaced starting Friday March 17th. Both SEMs will be shut down and the SEM room will be off limits beginning at 8 am Friday and return to normal operations Tuesday morning the 21st.<br />
//[[User:Mehalana v|Vraj Mehalana]] 10:55, 16 March 2023 (PDT)<br />
<!--feedBurner name="UCSBNanofab-Announcements" /--><br />
<!-- Description of the RSS feed --><br />
<!--<br />
SEE THE BOTTOM OF THIS PAGE FOR DETAILED INSTRUCTIONS ON ADDING NEWS ITEMS.<br />
In order for your post to show up correctly, you need to:<br />
>> Use FIVE equal-signs for the Title's heading level. eg.: ===== my post =====<br />
>> Use two slashes // and FOUR tilde's to insert your signature at the end of your post: //~~~~<br />
--><br />
<br />
<!----------------------------------------------><br />
<!------------- Equipment Status ----------------><br />
===== E-Beam #5: Down =====<br />
Chuck rotation motor damaged.<br />
// [[User:Mehalana v|Vraj Mehalana]] 14:38, 13 March 2023 (PDT)<br />
<br />
===== Unaxis Etch: Down =====<br />
We had to take the VAT controller off of this module to get the ICP-PECVD running. I have no immediate ETA for this system coming back online. Until we get this system running again you will need to use the Oxford Cobra system. -- Tony<br />
// [[User:John d|John d]] 09:35, 13 February 2023 (PST)<br />
<br />
===== Dektak XT ready for training =====<br />
We have replaced the Dektak 6M with a new Dektak XT profilometer. The system is available for training, please [[Aidan_Hopkins|contact the tool supervisor]].<br />
// [[User:John d|John d]] 10:08, 7 February 2023 (PST)<br />
<br />
===== Au Plating: UP=====<br />
only the full 100mm wafer fixture is available at the moment. You can plate smaller pieces on it with no issues.<br />
// [[User:Mehalana v|Vraj Mehalana]] 12:35, 15 March 2023 (PDT)<br />
<br />
<!---------- end of Equipment Status ------------><br />
<!---------DO NOT EDIT BELOW THIS LINE-----------><br />
<endfeed /><br />
<noinclude>[[Category:Templates]]</noinclude><br />
<!--------------------------------------------<br />
====== HOW TO ADD ITEMS ======<br />
<br />
* You can copy/paste the example below for a new news item.<br />
* Use level 5 heading for each item (5 equal signs surrounding the title) - they will show up as separate RSS items this way. (This looks best on the Wiki homepage)<br />
* You must add a user signature at the end of each post via four tildes: [[User:Silva|Silva]] 13:26, 4 February 2023 (PST). Required for the RSS plugin to determine the timestamp, or else post goes to the end of the RSS feed. <br />
* Use double-slash: // at start of new lines - makes display on the Samsung Display look a lot better, since it strips newlines.<br />
* Optional: After saving the page, delete the name after the two dashes "--" and delete the "[[(talk)...]]" link. <br />
* Please use "There are no announcements at this time." if the announcements are empty.<br />
<br />
* URL to the RSS feed via FeedBurner (for Samsung display): http://wiki.nanotech.ucsb.edu/w/index.php?title=Template:Announcements&action=feed&feed=rss<br />
* URL to the RSS feed directly from Wiki: https://wiki.nanotech.ucsb.edu/w/index.php?title=Template:Announcements&action=feed&feed=rss<br />
<br />
<br />
******** EXAMPLE OF A NEW POST ********<br />
<br />
===== NanoFab making LN2 icecream =====<br />
Tomorrow the NanoFab will be serving liquid nitrogen ice cream.<br />
// [[User:Silva|Silva]] 13:26, 4 February 2023 (PST)<br />
<br />
************* (end of example) **************<br />
The [[User:Silva|Silva]] 13:26, 4 February 2023 (PST) will be replaced with your username & timestamp after you submit the post.<br />
----------------------------------------------></div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=Dicing_Saw_(ADT)&diff=160997Dicing Saw (ADT)2023-03-16T21:00:32Z<p>Sawyer l: SOP Rev</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=ADT.jpg<br />
|type = Packaging<br />
|super= Lee Sawyer<br />
|super2= Aidan Hopkins<br />
|location=Dicing Room: ESB 1147<br />
|description = ADT Dicing Saw<br />
|model = ADT 7100<br />
|manufacturer = Advanced Dicing Technologies Ltd.<br />
|materials = <br />
|toolid=49<br />
}} <br />
==About==<br />
The ADT 7100 Dicing Saw is optimized for multi-angle dicing of thin, tight tolerance products up to 200 mm x 200 mm. It is currently setup for dicing up to 8” diameter wafers. Check the [https://wiki.nanotech.ucsb.edu/w/index.php?title=Packaging_Recipes#Dicing_Saw_Recipes_.28ADT_7100.29 Dicing Saw Recipes page] for the blades we currently stock.<br />
<br />
An ADT WM-966 tape applicator & Ultron Systems UH104-8 UV lamp system is used to apply UV-release tape for securing die during dicing.<br />
<br />
Contact the tool supervisor for blades and dicing frames for your group.<br />
<br />
==Detailed Specifications==<br />
<br />
*Maximum Wafer Size: 8"<br />
*Parts mounted to UV-release tape for cutting<br />
*Automated cut maps at multiple angles (0° and 90° typical)<br />
*~few micron alignment to on-wafer features.<br />
*Thermocarbon Resnoid dicing blades provided by staff<br />
<br />
==Operating Procedures==<br />
<br />
*[https://wiki.nanotech.ucsb.edu/w/images/a/a5/ADT_SOP_Rev_H.pdf ADT Dicing Saw Standard Operating Procedure]<br />
*[https://wiki.nanotech.ucsb.edu/w/images/0/01/Tape_Station_SOP_Rev_A.pdf Tape Station Standard Operating Procedure]<br />
*[[ADT 7100 - Recovering an Old Recipe (2019)|Recovering an Old Recipe]]<br />
<br />
<br />
==Recipes==<br />
<br />
*Recipes > Packaging > '''[[Packaging Recipes#Dicing Saw Recipes .28ADT 7100.29|Dicing Saw Recipes (ADT 7100)]]'''<br />
<br />
Be sure to also see the recipes for protecting your sample from dicing dust, and mounting/unmounting.</div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:ADT_SOP_Rev_H.pdf&diff=160996File:ADT SOP Rev H.pdf2023-03-16T20:59:50Z<p>Sawyer l: </p>
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<div></div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=RIE_2_(MRC)&diff=160974RIE 2 (MRC)2023-03-10T15:36:03Z<p>Sawyer l: SOP rev</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=RIE2.jpg<br />
|type = Dry Etch<br />
|super= Lee Sawyer<br />
|super2= Aidan Hopkins<br />
|phone= 805-893-2123<br />
|location=Bay 2<br />
|email=lee_sawyer@ucsb.edu<br />
|description = RIE #2 Methane/Hydrogen-Based System<br />
|manufacturer = Materials Research Corporation (MRC)<br />
|materials = <br />
|toolid=25<br />
}} <br />
==About==<br />
<br />
<br />
This is a Materials Research Corporation RIE-51 parallel plate, 13.56 Mhz system used primarily for the etching of InP with CH<sub>4</sub>/H<sub>2</sub>/Ar gases, although it can be used to etch As- and Sb-based III-V compounds and a variety of II-VI semiconductors as well. For Al-containing compounds and II-VI compounds, high bias power is required. Tool features include: six inch diameter water cooled cathode/substrate platform, pyrex cylinder for plasma confinement and gas flow control, adjustable cathode-anode spacing, fixed bias or power control and HeNe laser etch monitor with chart recorder. It is diffusion pumped and has no loadlock. Various etching applications have included: in-plane lasers/facets, InP-based HBTs, FET gate recessing, InP-based quantum microcavities, Bragg-Fresnel x-ray lenses and waveguides. <br />
<br />
RIE of InP and related compounds can be achieved with a hydride-based process chemistry of methane/hydrogen with an etching mechanism due to a "reverse" metalorganic CVD reaction. Because both etching and deposition occur simultaneously, it is important to use the proper gas flows and to periodically remove any polymer reaction by-products deposited on the non-etched (mask) surfaces. (This system has an additional flow circuit in order to bleed in small amounts, &lt;1 sccm, of O<sub>2</sub>). Alternatively, one can perform cyclic etching between MHA and O<sub>2</sub> to keep polymer formation to a minimum. With this technique selectivity is quite high and anisotropic etching can be achieved. While a metal, dielectric or photoresist may be used as a mask, photoresist should only be used at low bias voltages in order to avoid mask pattern distortions due to reflow. A precoat etch should be done before etching to condition the chamber. <br />
<br />
==Detailed Specifications==<br />
<br />
*Etch gases include: CH<sub>4</sub>, H<sub>2</sub>, Ar and O<sub>2</sub><br />
*Low 1 E -6 ultimate chamber pressure<br />
*13.56 Mhz excitation frequency<br />
*Sample size limited to approximately 2 inches<br />
*HeNe and IR laser monitoring for endpoint<br />
*Automatic tuning network<br />
*DC Bias or RF power control<br />
*Masking materials include: Ni, SiON, photoresist (limited to low bias/power)<br />
*Typical etch conditions for InGaAsP: <br />
**75 mT (CH<sub>4</sub>/H<sub>2</sub>/Ar&nbsp;: 4/20/10 sccm)<br />
**450v bias<br />
**~ 45 nm/min. etch rate<br />
<br />
==Documentation==<br />
<br />
*[https://wiki.nanotech.ucsb.edu/w/images/4/41/RIE_2_SOP_Rev_C.pdf RIE #2 Standard Operating Procedure]</div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:RIE_2_SOP_Rev_C.pdf&diff=160973File:RIE 2 SOP Rev C.pdf2023-03-10T15:32:28Z<p>Sawyer l: </p>
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<div></div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=CAIBE_(Oxford_Ion_Mill)&diff=160966CAIBE (Oxford Ion Mill)2023-03-08T21:57:33Z<p>Sawyer l: Update SOP rev</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=CAIBE.jpg<br />
|type = Dry Etch<br />
|super= Bill Millerski<br />
|super2= Lee Sawyer<br />
|location=Bay 2<br />
|description = CAIBE (Chemically Assisted Ion Beam Etcher)<br />
|manufacturer = Oxford Instruments<br />
|model = Ionfab 300 Plus<br />
|materials = Various<br />
|toolid=58<br />
}} <br />
==About==<br />
<br />
This is an Oxford Instruments PlasmaLab 300 IBE/RIBE/CAIBE system used for ion beam etching of a variety of materials including metals, oxides, semiconductors. Ion beam etching (IBE) allows control of sidewall etch profiles by tilting and rotating the sample during the etch. Reactive chemistry ("Chemically Assisted Ion Beam Etching", CAIBE) can be used, when appropriate, to enhance the etch rate of materials, such as oxides, polymers, and semiconductors. <br />
<br />
This system is used to physically ion beam etch noble and inert metals with Ar ion milling, and to etch other materials that react with chlorine, fluorine, or oxygen using a reactive ion beam. The ion beam is generated in a 15cm diameter 3-grid ion source manufactured by Oxford. The Ion beam voltage & current control the etch rate. Beam voltage (related to ion energy) affects the sputter yield (atoms etched per incident ion) and Ion beam current controls the flux of ions (number of ions in the beam). Etch rate should be roughly linear with beam current. Neutralizing electrons are generated by a plasma bridge neutralizer (PBN) so that samples are not charged by ions during the etch. Samples can be cooled to 5°C or heated to 300°C for etching. He back-side cooling is used to transfer heat from(to) the sample to(from) the cooled(heated) platen. <br />
<br />
===Cluster Configuration===<br />
The Ion Mill system is clustered with 2 Oxford ALD systems, allowing the process flexibility of etching followed by ALD passivation or metalization without breaking vacuum.<br />
<br />
*Chamber #1: [[Atomic Layer Deposition (Oxford FlexAL)|ALD Metal Films only]]<br />
*Chamber #2: [[CAIBE (Oxford Ion Mill)|CAIBE Oxford Ion Mill]] (this page)<br />
*Chamber #3: [[Atomic Layer Deposition (Oxford FlexAL)|ALD Dielectrics Films only]]<br />
<br />
==Detailed Specifications==<br />
<br />
*Etch gases include: CF<sub>4</sub>, Cl<sub>2</sub>, Ar, O<sub>2</sub><br />
*Cl<sub>2</sub> available in CAIBE mode (Cl2 not entering ion gun) through a gas ring.<br />
*RIBE (reactive gas entering ion gun during RF discharge) mode for all reactive gases<br />
*Low 1 E -7 Torr ultimate chamber pressure, etch pressure ~1 E-4 Torr<br />
*15cm ion-gun with PBN neutralizer<br />
*Angled etch control from 0 degrees (normal incidence) to 75 degrees.<br />
*Sample Rotated or fixed at controlled position for etching.<br />
*Vb from 50V to over 1000V<br />
*Ib up to 500mA<br />
*He-backside cooling<br />
*Substrate temperature 5C to 300C<br />
*Sample sizes:<br />
**6" wafer (no carrier needed)<br />
**4" wafer mount with backside Helium cooling ports<br />
**2" wafer mount with backside Helium cooling ports<br />
**35mm square pieces or smaller, mount with backside Helium cooling ports<br />
*Clustered through vacuum chambers with ALD systems.<br />
*Masking material depends on material being etched and etch gas used<br />
<br />
==Recipes==<br />
Recipes can be found on the [https://wiki.nanotech.ucsb.edu/w/index.php?title=Other_Dry_Etching_Recipes#CAIBE_.28Oxford_Ion_Mill.29 '''CAIBE Recipes Page'''].<br />
<br />
==Procedures & Documentation==<br />
<br />
*[https://wiki.nanotech.ucsb.edu/w/images/4/40/Oxford_Cluster_Tool_Operating_Instructions_Rev_B.pdf Cluster Operating Instructions] - same instructions as ALD, except for the '''following difference''':<br />
**''Make sure to securely attach your samples to the platens with clips, since the holder will be angled and rotated!'' ''6-inch wafers can be loaded as-is.''<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/7/75/Ion_Beam_Etch_Overview_rev1.pdf Additional Documentation]</div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=Atomic_Layer_Deposition_(Oxford_FlexAL)&diff=160965Atomic Layer Deposition (Oxford FlexAL)2023-03-08T21:56:16Z<p>Sawyer l: Update SOP rev</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=FlexAL.jpg<br />
|type = Vacuum Deposition<br />
|super= Bill Millerski<br />
|super2= Lee Sawyer<br />
|phone=(805)839-2655<br />
|location=Bay 2<br />
|email=wmillerski@ucsb.edu<br />
|description = Oxford FlexAL Atomic Layer Deposition<br />
|manufacturer = [http://www.oxford-instruments.com/businesses/plasma-technology/Pages/plasma-technology.aspx Oxford Instruments Plasma Technologies]<br />
|materials = <br />
|toolid=6<br />
}} <br />
=About=<br />
The Oxford Instruments FlexAL Atomic Layer Deposition system at UCSB is a plasma-enhanced ALD system for the precise growth of ultra-thin oxides and nitrides. Self-limiting layer by layer growth ensures precise control, film conformality, and repeatability of the films. <br />
<br />
The system currently has metallorganic precursors for Aluminum, Hafnium, Titanium, Platinum, Zirconium, and Silicon oxides and nitrides as well as Ruthenium and Platinum. Water and Ozone are available for thermal oxides and Oxygen, Ammonia, Nitrogen, and Hydrogen are available for plasma assisted oxides and nitrides. Remote ICP plasma powers up to 600W are possible. <br />
<br />
The system is load-locked and can accommodate sample temperatures up to 550°C. Processing temperature windows are defined for each material based on growth limitations. The system is step-by-step programmable through a flexible GUI interface. <br />
<br />
===Cluster Configuration===<br />
We have three separate chambers on the Oxford Cluster tool, two of which are ALD chambers. <br />
<br />
ALD chamber sources are configured with different precursors based on demand. The other chamber on the cluster is the [[CAIBE (Oxford Ion Mill)|Oxford Ion Mill]].<br />
<br />
*Chamber #1: ALD: Al2O3, SiO2, Ru, Pt, Al:ZnO<br />
*Chamber #2: [[CAIBE (Oxford Ion Mill)|Oxford Ion Mill (CAIBE)]]<br />
*Chamber #3: Al2O3, SiO2, HfO2, ZrO2, TiN<br />
<br />
=Procedures & Documentation=<br />
<br />
*[https://wiki.nanotech.ucsb.edu/w/images/4/40/Oxford_Cluster_Tool_Operating_Instructions_Rev_B.pdf Operating Instructions]<br />
**Includes recipe names for various films, and approx. dep. rates<br />
*Film Thicknesses are restricted to '''30nm or less'''. <br />
**'''Thicker films are allowed with prior staff approval''' - please ask [[Brian Lingg|Tool Supervisor]] if you want to deposit a thicker film!<br />
<br />
==ALD Recipes==<br />
<br />
*The [[Atomic_Layer_Deposition_Recipes|'''Atomic Layer Deposition: Recipes''']] page shows all available recipes and data/measurements.<br />
*Only staff-provided recipes are allowed to be run on this tool, as achieving the atomic-layer regime is rather complex. [[Bill Mitchell]] is the resident expert on ALD recipe development.<br />
<br />
==Etch Rates of ALD Films==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/1/14/Wet_Etching_of_ALD_Al2O3_Plasma_300C.xls Al2O3 Plasma 300C Wet Etch Rates]</div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:Oxford_Cluster_Tool_Operating_Instructions_Rev_B.pdf&diff=160964File:Oxford Cluster Tool Operating Instructions Rev B.pdf2023-03-08T21:55:15Z<p>Sawyer l: </p>
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<div></div>Sawyer lhttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:EB2_SOP_Rev_F.pdf&diff=160960File:EB2 SOP Rev F.pdf2023-03-02T17:26:44Z<p>Sawyer l: Sawyer l uploaded a new version of File:EB2 SOP Rev F.pdf</p>
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<div></div>Sawyer l