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2024-03-29T10:14:05Z
User contributions
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https://wiki.nanofab.ucsb.edu/w/index.php?title=ICP_Etching_Recipes&diff=159435
ICP Etching Recipes
2021-11-09T22:24:18Z
<p>Ningcao: add a SiO2 Etch link using Flourine ICP</p>
<hr />
<div>{{recipes|Dry Etching}}<br />
<br />
=[[DSEIII_(PlasmaTherm/Deep_Silicon_Etcher)]]=<br />
<br />
==Edge-Bead Removal==<br />
Make sure to remove photoresist from edges of wafer, or PR may stick to the top-side wafer clamp and destroy your wafer during unload!<br />
<br />
*[[ASML DUV: Edge Bead Removal via Photolithography|Edge Bead Removal via Photolithography]]: use a custom metal mask to pattern the photoresist with a flood exposure.<br />
**If you are etching fully through a wafer, remember that removal of edge-bead will cause full etching in the exposed areas. To prevent a wafer from falling into the machine after the etch, you can [[Packaging Recipes#Wafer Bonder .28Logitech WBS7.29|mount to a carrier wafer using wax]].<br />
<br />
==High Rate Bosch Etch (DSEIII)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/4/4a/10-Si_Etch_Bosch_DSEIII.pdf Bosch Process Recipe and Characterization] - Standard recipe on the tool.<br />
**Recipe Name: "'''''Plasma-Therm Standard DSE'''''" (''Production'' - copy to your ''Personal'' category)<br />
**Standard [https://en.wikipedia.org/wiki/Deep_reactive-ion_etching#Bosch_process Bosch Process] for high aspect-ratio, high-selectivity Silicon etching.<br />
**Cycles between polymer deposition "Dep" / Polymer etch "Etch A" / Si etch "Etch B" steps. Step Times gives fine control.<br />
***To reduce roughening/grassing (black silicon), reduce Dep step time by ~20%.<br />
**Patterns with different etched areas will have different "optimal" parameters.<br />
**Approx Selectivity to Photoresist: 60-80 or better. Larger open area, lower selectivity and lower etch rate.<br />
<br />
==Single-Step Low Etch Rate Smooth Sidewall Process (DSEIII)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/8f/10-Si_Etch_Single_Step_Smooth_Sidewall_DSEIII.pdf Single Step Silicon Etch Recipe and Characterization]<br />
**Recipe Name: "'''''Nano Trench Etch'''''" (''Production'' - copy to your ''Personal'' category)<br />
**Used instead of Bosch Process, to avoid scalloping on the sidewall.<br />
**Lower selectivity, lower etch rate, smoother sidewalls.<br />
<br />
=[[Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)|PlasmaTherm/SLR Fluorine Etcher]]=<br />
==Si Etching (Fluorine ICP Etcher)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/b/b8/SLR_-_SiVertHF.pdf SiVertHF] - Si Vertical Etch using C<sub>4</sub>F<sub>8</sub>/SF<sub>6</sub>/CF<sub>4</sub> and resist mask<br />
**Etch Rates: Si ≈ 300-350 nm/min; SiO<sub>2</sub> ≈ 30-35 nm/min<br />
**89-90 degree etch angle, ie, vertical.<br />
**Due to high selectivity against SiO2, it may be necessary to run a ~10sec 50W SiO<sub>2</sub> etch (below) to remove native oxide on Si. This can be performed ''in situ'' before the Si etch.<br />
<br />
==SiO2 Etching (Fluorine ICP Etcher)==<br />
<br />
*[[SiO2 Etch Test using CF4/CHF3]]<br />
*[//wiki.nanotech.ucsb.edu/w/images/f/f6/SiO2_Etch%2C_Ru_HardMask_-_Fluorine_ICP_Etch_Process_-_Ning_Cao_2019-06.pdf SiO2 Etching using Ruthenium Hardmask] - Full Process Traveler<br />
**''Ning Cao & Bill Mitchell, 2019-06''<br />
**''High-selectivity and deep etching using sputtered Ru hardmask and I-Line litho.''<br />
**''Chemistry: CHF3/CF4''<br />
**''Variations in SiO<sub>2</sub> etch Bias Power: 50 / 200 / 400W bias.''<br />
**Ru etch selectivity to PR: 0.18 (less than 1): 150nm Ru / 800nm PR<br />
**200W Bias:<br />
***SiO<sub>2</sub> selectivity to Ru: 38<br />
***SiO<sub>2</sub> etch rate: 471nm/min<br />
**50W Bias:<br />
***Higher selectivity to photoresist: TBD<br />
***SiO<sub>2</sub> selectivity to Ru: 36<br />
***SiO<sub>2</sub> etch rate: 263nm/min<br />
**This etch is detailed in the following article: [[Template:Publications#Highly Selective and Vertical Etch of Silicon Dioxide using Ruthenium Films as an Etch Mask|W.J. Mitchell ''et al.'', JVST-A, May 2021]]<br />
<br />
==Photoresist & ARC (Fluorine ICP Etcher)==<br />
Chain multiple Recipes in a Flow, to allow you to to do ''in situ'' BARC etching, and follow up with ''in situ'' Photoresist Strip.<br />
<br />
===PR/BARC Etch (Fluorine ICP Etcher)===<br />
<br />
*Etching [[Stepper Recipes#DUV-42P|DUV42P-6]] Bottom Anti-Reflection Coating<br />
**~60nm thick (2500krpm)<br />
**O2=20sccm / 10mT / RF1(bias)=100W / RF2(icp)=0W<br />
**1min<br />
<br />
===Photoresist Strip/Polymer Removal (Fluorine ICP Etcher)===<br />
<br />
**O2=100sccm / 5mT / RF1(bias)=10W / RF2(icp)=825W<br />
**Use laser monitor to check for complete removal, overetch to remove Fluorocarbon polymers.<br />
<br />
==Historical Data (Fluorine ICP Etcher)==<br />
<br />
===SiO2 Etch Historical Data===<br />
<br />
*[[Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher|Test Data of Etching SiO<sub>2</sub> with CHF3/CF4-Fluorine ICP Etcher]]<br />
<br />
==Cleaning Procedures (Fluorine ICP Etcher)==<br />
''To Be Added''<br />
<br />
=[[ICP Etch 1 (Panasonic E626I)]]=<br />
==SiO<sub>2</sub> Etching (Panasonic 1)==<br />
<br />
===Recipes===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/3/3e/Panasonic1-SiO-Etch.pdf SiO<sub>2</sub> Vertical Etch Recipe Parameters - CHF<sub>3</sub> "SiOVert"]<br />
**Etch rate ≈ 2300Å/min (users must calibrate)<br />
**Selectivity (SiO2:Photoresist) ≈ greater than 1:1 (users must calibrate)<br />
<br />
===Historical Data (SiO2, Panasonic 1)===<br />
<br />
*[[Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Florine etch of the underneath layer)|Test Data of etching SiO2 with CHF3/CF4/O2]]<br />
*[[Test Data of etching SiO2 with CHF3/CF4-ICP1|Test Data of etching SiO2 with CHF3/CF4]]<br />
<br />
===Recipe Variations===<br />
''Use these to determine how each etch parameter affects the process.''<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/5/5e/Panasonic1-SiO2-Data-Process-Variation-CHF3-revA.pdf SiO<sub>2</sub> CHF<sub>3</sub> Etch Variations] - CHF3 with varying Bias and Pressure, Slanted SiO2 etching<br />
<br />
==SiN<sub>x</sub> Etching (Panasonic 1)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/c/ce/Panasonic1-SiN-Etch-Plasma-CF4-O2-ICP-revA.pdf SiN<sub>x</sub> Etch Rates and Variations - CF<sub>4</sub>-O<sub>2</sub>]<br />
<br />
==Al Etch (Panasonic 1)==<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/3/3b/Panasonic-1-Al-Etch-RevA.pdf Al Etch Recipes - Cl<sub>2</sub>BCl<sub>3</sub>]<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/6/60/32-Reducing_AlCl3_Corrosion_with_CHF3_plasma.pdf AlCl<sub>3</sub> Erosion Issue and the Solution]<br />
<br />
==Cr Etch (Panasonic 1)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/88/Panasonic-1-Cr-Etch-revA.pdf Cr Etch Recipes - Cl<sub>2</sub>O<sub>2</sub>]<br />
<br />
==Ta Etch (Panasonic 1)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/f/f2/104_Ta_Etch.pdf Ta Etch Recipe] - Cl2/BCl3<br />
<br />
==Ti Etch (Panasonic 1)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/4/47/Panasonic-1-Ti-Etch-Deep-RevA.pdf Ti Deep Etch Recipes - Cl<sub>2</sub>Ar]<br />
**See [[doi:10.1149/1.2006647|E. Parker, ''et. al.'' Jnl. Electrochem. Soc., 152 (10) C675-C683 2005]].<br />
<br />
==W-TiW Etch (Panasonic 1)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/7/76/Panasonic1-TiW-W-Etch-Plasma-RIE-RevA.pdf Ti-TiW Etch Recipes - SF<sub>6</sub>Ar]<br />
<br />
==GaAs-AlGaAs Etch (Panasonic 1)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/b/bb/Panasonic1-GaAs-PhotonicCrystal-RIE-Plasma-Nanoscale-Etch-RevA.pdf GaAs-Nanoscale Etch Recipe - PR mask - Cl<sub>2</sub>-BCl<sub>3</sub>-Ar]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/2/26/12-Plasma_Etching_of_AlGaAs-Panasonic_ICP-1-Etcher.pdf AlGaAs Etch Recipes - Cl<sub>2</sub>N<sub>2</sub>]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/0/04/Panasonic1-GaAs-Via-Etch-Plasma-RIE-Fast-DRIE-RevA.pdf GaAs DRIE via Etch Recipes - Cl<sub>2</sub>-BCl<sub>3</sub>-Ar PR passivation]<br />
<br />
==GaN Etch (Panasonic 1)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/d/d6/07-GaN_Etch-Panasonic-ICP-1.pdf GaN Etch Recipes Cl<sub>2</sub>N<sub>2</sub>]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/6/60/Panasonic1-GaN-AlGaN-Selective-Etch-Plasma-RIE-ICP-RevA.pdf GaN Selective Etch over AlGaN Recipes BCl<sub>3</sub>-SF<sub>6</sub>]<br />
<br />
==Photoresist and ARC Etching (Panasonic 1)==<br />
[https://wiki.nanotech.ucsb.edu/w/index.php?title=ICP_Etching_Recipes#Photoresist_and_ARC_etching_.28Panasonic_2.29 Please see the recipes for Panasonic ICP#2] - the same recipes apply. <br />
<br />
Etching of DUV42P at standard spin/bake parameters also completes in 45 seconds.<br />
<br />
==SiC Etch (Panasonic 1)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/d/d0/Panasonic_1-SiC-ICP-RIE-Etch-Plasma-SF6-RevA.pdf SiC Etch Recipes Ni Mask - SF<sub>6</sub>]<br />
<br />
==Sapphire Etch (Panasonic 1)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/3/3a/Panasonic1-sapphire-etch-RIE-Plasma-BCl3-ICP-RevA.pdf Sapphire Etch Recipes Ni and PR Mask - BCl<sub>3</sub>-Cl<sub>2</sub>]<br />
<br />
==Old Deleted Recipes==<br />
Since there are a limited number of recipe slots on the tool, we occasionally have to delete old, unused recipes.<br />
<br />
If you need to free up a recipe slot, please contact [[Don Freeborn|Don]] and he'll help you find an old recipe to replace. We take photographs of old recipes, and save them in case a group needs to revive the recipe. Contact us if your old recipe went missing.<br />
<br />
=[[ICP Etch 2 (Panasonic E640)]]=<br />
Recipes starting points for materials without processes listed can be obtained from Panasonic1 recipe files. The chambers are slightly different, but essentially the same, requiring only small program changes to obtain similar results.<br />
<br />
==SiO<sub>2</sub> Etching (Panasonic 2)==<br />
<br />
===Recipes===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/d/d5/Panasonic2-SiOx-Recipe.pdf SiO<sub>2</sub> Vertical Etch Recipe - CHF<sub>3</sub> "SiOVert"]<br />
**Direct copy of "SiOVert" from ICP#1, [[ICP_Etching_Recipes#SiO2_Etching_.28Panasonic_1.29|see parameters there]].<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/9/9e/33-Etching_SiO2_with_Vertical_Side-wall.pdf SiO<sub>2</sub> Vertical Etch Recipe#2 - CF<sub>4</sub>/CHF<sub>3</sub>]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/1/1e/Panasonic2-ICP-Plasma-Etch-SiO2-nanoscale-rev1.pdf SiO<sub>2</sub> Nanoscale Etch Recipe - CHF<sub>3</sub>/O<sub>2</sub>]<br />
<br />
===Historical Data (SiO2 Etch, Panasonic 2)===<br />
<br />
*[[Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Fluorine etch of the underneath layer)|Test Data of etching SiO2 with CHF3/CF4/O2]]<br />
*[[Test Data of etching SiO2 with CHF3/CF4]]<br />
<br />
===Recipe Variations===<br />
''Use these to determine how each etch parameter affects the process.''<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/1/1e/05-SiO2_Nano-structure_Etch.pdf Angled SiO2 sidewall recipe]<br />
<br />
==SiN<sub>x</sub> Etching (Panasonic 2)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/0/06/Panasonic2-ICP-Plasma-Etch-SiN-nanoscale-rev1.pdf SiN<sub>x</sub> Nanoscale Etch Recipe - CHF<sub>3</sub>/O<sub>2</sub>]<br />
<br />
==Al Etch (Panasonic 2)==<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/3/3b/Panasonic-1-Al-Etch-RevA.pdf Al Etch Recipes - use panasonic 1 parameters, etch rate 50% higher]<br />
<br />
==Al2O3 Etching (Panasonic 2)==<br />
[//wiki.nanotech.ucsb.edu/wiki/images/d/d2/Brian_Markman_-_Al2O3_ICP2_Etch_Rates_2018.pdf ALD Al2O3 Etch Rates in BCl3 Chemistry] (click for plots of etch rate)<br />
<br />
''Contributed by Brian Markman, 2018''<br />
<br />
*BCl3 = 30sccm<br />
*Pressure = 0.50 Pa<br />
*ICP Source RF = 500<br />
*Bias RF = 50W or 250W (250W can burn PR)<br />
*Cooling He Flow/Pressure = 15.0 sccm / 400 Pa<br />
*Etch Rate 50W: 0.66nm/sec<br />
*Etch Rate 250W: 1.0 nm/sec<br />
<br />
==GaAs Etch (Panasonic 2)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/f/ff/16-GaAs_etch-ICP-2.pdf GaAs Etch Recipes - Panasonic 2 - Cl<sub>2</sub>N<sub>2</sub>]<br />
<br />
==Photoresist and ARC etching (Panasonic 2)==<br />
Basic recipes for etching photoresist and Bottom Anti-Reflection Coating (BARC) underlayers are as follows:<br />
<br />
===ARC Etching: DUV-42P or AR6===<br />
<br />
*O2 = 40 sccm // 0.5 Pa<br />
*ICP = 75W // RF = 75W<br />
*45 sec for full etching of DUV-42P (same as for AR6; 2018-2019, [[Demis D. John|Demis]]/[[Brian Thibeault|BrianT]])<br />
<br />
===UV6-0.8 Etching===<br />
Works very well for photoresist stripping<br />
<br />
*O2 = 40 sccm // 1.0 Pa<br />
*ICP = 350W // RF = 100W<br />
*Etch Rate = 518.5nm / 1min (2019, [[Demis D. John|Demis]])<br />
*2m30sec to fully remove with ~200% overetch<br />
<br />
==Ru (Ruthenium) Etch (Panasonic 2)==<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/e/e9/194_Ru_Etch_O2%2CCl2.pdf Ru Etch] - ''[[Bill Mitchell]] 2019-09-19''<br />
**''This etch is used in the following publication:'' [[Template:Publications#Highly Selective and Vertical Etch of Silicon Dioxide using Ruthenium Films as an Etch Mask|W.J. Mitchell, "Highly Selective and Vertical Etch of Silicon Dioxide using Ruthenium Films as an Etch Mask" (JVST-A, 2021)]]<br />
<br />
=[[ICP-Etch (Unaxis VLR)]]=<br />
==GaAs-AlGaAs Etch (Unaxis VLR)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/4/4e/15-GaAs_etch-Unaxis_ICP_etcher.pdf GaAs Etch Recipe (Cl<sub>2</sub>N<sub>2</sub> 30C)]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/1/1f/14-AlAs-GR-cal_etch-Unaxis_ICP_etcher.pdf AlGaAs Etch Recipe (Cl<sub>2</sub>N<sub>2</sub> 30C)]<br />
<br />
==InP-InGaAs-InAlAs Etch (Unaxis VLR)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/9/90/18-InP-based_etching-Cl2N2Ar.pdf InP-based Material Etch Profile (Cl<sub>2</sub>N<sub>2</sub>Ar200C)]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/a/ad/17-InP%26InGaAs_etch-Cl2H2Ar-Unaxis-VLR.pdf InP-InGaAs Etch Profile (Cl<sub>2</sub>H<sub>2</sub>Ar 200C)]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/6/6e/SiO2-Mask_Etch_Recipe_for_Unaxis_Cl2_Etch.pdf Recipe of Etching SiO<sub>2</sub> Mask for Cl<sub>2</sub> Etch (ICP#2)]<br />
*[[InP Etch Test Result in Details|InP Etch Historical Data (Cl<sub>2</sub>H<sub>2</sub>Ar 200C)]]<br />
*[[InP Etch Rate and Selectivity (InP/SiO2)|InP Etch Test]]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/a/ac/Lower-Etch-Rate_InP_Etch_using_Unaxis_PM1_tool_at_200_C.pdf Lower etch-rate InP Etch (Cl<sub>2</sub>N<sub>2</sub> 200C)]<br />
<br />
==GaN Etch (Unaxis VLR)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/d/df/09-Plasma_Etching_of_GaN-UnaxisPM1.pdf GaN Etch Recipe (Cl<sub>2</sub>BCl<sub>3</sub>N<sub>2</sub>Ar 85C)]<br />
<br />
==GaSb Etch (Unaxis VLR)==<br />
<br />
=[[Oxford ICP Etcher (PlasmaPro 100 Cobra)]]=<br />
<br />
==InP Ridge Etch (Oxford ICP Etcher)==<br />
InP etches were characterized with '''no''' mounting adhesive used, 1/4-wafer of 50mm wafer placed on blank Silicon carriers (rough side up).<br />
<br />
===Low-Temp (60°C) Process===<br />
<br />
*[[Media:Oxford Etcher - InP Ridge Etch using Oxford PlasmaPro 100 Cobra - 2021-09-08.pdf|Low-Temp InP Ridge Etch Characterization]] - ''Ning Cao, 2021-09-08''<br />
**Bulk InP etches, no mounting adhesive, pieces on blank Silicon carrier<br />
*[[Oxford Etcher - InP Ridge Etch Traveler|InP Ridge Process - Basic Traveler]]<br />
<br />
==InP Grating Etch (Oxford ICP Etcher)==<br />
InP/InGaAsP etches were characterized with '''no''' mounting adhesive used, 1/4-wafer of 50mm wafer placed on Silicon carriers (rough side up).<br />
<br />
*[[Media:Oxford Etcher - InP Grating Etch at 20 C - Oxford Cobra 300 2021-08-26.pdf|InP/InGaAsP Grating Etch Characterization]] - ''Ning Cao, 2021-08-26''<br />
*[[Oxford Etcher - InP//InGaAsP Grating Traveler|InP//InGaAsP Grating - Basic Traveler]]<br />
<br />
=[[Si Deep RIE (PlasmaTherm/Bosch Etch)]]=<br />
'''This tool does not exist in this configuration any more, so these recipes are for Reference purposes Only!!!'''<br />
The machine was upgraded to be the new Plasma-Therm Fluorine ICP Etcher - the chamber configuration is now different, making these recipes invalid.<br />
For Deep Silicon Etching, the Plasma-Therm DSE-iii is often used. Some single-step Silicon etching is still performed on the SLR Fluorine ICP, due to the slower etch rate.<br />
<br />
==Bosch and Release Etch (Si Deep RIE)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/0/02/10-Si_Etch_Bosch_Release_DRIE.pdf Bosch and Release Processes]<br />
**Ideal for deep (>>1µm), vertical etching of Silicon. Through-wafer etches are possible (requires carrier wafer).<br />
**Etch rate depends on area of exposed silicon being etched.<br />
**Al<sub>2</sub>O<sub>3</sub> mask (ALD or Sputter) has >9000:1 selectivity<br />
**SiO<sub>2</sub> (PECVD) mask has ~100:1 selectivity<br />
**Thermal SiO<sub>2</sub> has ~300:1 selectivity.<br />
<br />
==Single-step Si Etching (not Bosch Process!) (Si Deep RIE)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/d/d2/10-Si_Etch_using_DRIE_%28single-step%29.pdf Single-step Si Vertical Etch Recipe - SF<sub>6</sub>-C<sub>4</sub>F<sub>8</sub>-Ar]</div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=File:SOFL0103.pdf&diff=159434
File:SOFL0103.pdf
2021-11-09T22:17:41Z
<p>Ningcao: </p>
<hr />
<div></div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=SiO2_Etching_Test_using_CF4/CHF3&diff=159433
SiO2 Etching Test using CF4/CHF3
2021-11-09T20:43:37Z
<p>Ningcao: add a data point</p>
<hr />
<div>{| class="wikitable"<br />
| colspan="6" |Flourine ICP: 3.8mT, 50/900W, CF4/CHF3=30/10sccm, time=210 sec<br />
|-<br />
|Date<br />
|Sample#<br />
|Etch Rate (nm/min)<br />
|Etch Selectivity (SiO2/PR)<br />
|Averaged Sidewall Angle (<sup>o</sup>)<br />
|SEM Image<br />
|-<br />
|11/5/2021<br />
|SOFL01<br />
|136<br />
|1.2<br />
|<br />
|<br />
|}</div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=SiO2_Etching_Test_using_CF4/CHF3&diff=159432
SiO2 Etching Test using CF4/CHF3
2021-11-09T20:29:58Z
<p>Ningcao: add a table</p>
<hr />
<div>{| class="wikitable"<br />
| colspan="6" |Flourine ICP: 3.8mT, 50/900W, CF4/CHF3=30/10sccm, time=210 sec<br />
|-<br />
|Date<br />
|Sample#<br />
|Etch Rate (nm/min)<br />
|Etch Selectivity (SiO2/PR)<br />
|Averaged Sidewall Angle (<sup>o</sup>)<br />
|SEM Image<br />
|-<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|}</div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=InP_Etch_Rate_and_Selectivity_(InP/SiO2)&diff=159431
InP Etch Rate and Selectivity (InP/SiO2)
2021-11-09T01:00:35Z
<p>Ningcao: add a SEM</p>
<hr />
<div>{| class="wikitable"<br />
| colspan="4" |[https://wiki.nanotech.ucsb.edu/w/images/4/45/IP210201.pdf 1.4] mT, 125/800W, Cl2/H2/Ar flow-rate=6.3/12.7/2 sccm, chuck temperature=200 C, and etch time=90s (Prior to the etch, do O2 plasma chamber clean for 15 minutes, then, chamber coating with the same recipe and a quarter dummy InP on carrier for 15 minutes.<br />
|<br />
|-<br />
|Date <br />
|Sample#<br />
|InP Etch Rate (um/min)<br />
|Selectivity (InP/SiO2)<br />
|Profile SEM Picture<br />
|-<br />
|10/4/2016<br />
|InP#1613<br />
|0.92<br />
|8.9<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/9/9b/IP161332.pdf]<br />
|-<br />
|12/1/2016<br />
|InP#1614<br />
|0.96<br />
|12.1<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/e/ed/IP161421.pdf]<br />
|-<br />
|12/15/2016<br />
|InP#1615<br />
|0.91<br />
|9.3<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/6/64/IP161510.pdf]<br />
|-<br />
|1/23/2017<br />
|InP#1701<br />
|0.93<br />
|9.4<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/7/7f/IP170106.pdf]<br />
|-<br />
|2/7/2017<br />
|InP#1702<br />
|0.75<br />
|7.7<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/2/2f/IP170208.pdf]<br />
|-<br />
|2/21/2017<br />
|InP#1703<br />
|0.91<br />
|11.3<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/b/b8/IP170302.pdf]<br />
|-<br />
|3/21/2017<br />
|InP#1704<br />
|1.01<br />
|11.3<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/fd/IP170404.pdf]<br />
|-<br />
|4/20/2017<br />
|inP#1705<br />
|0.88<br />
|10.2<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/5/5b/IP170505.pdf]<br />
|-<br />
|5/4/2017<br />
|InP#1706<br />
|0.84<br />
|11<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/d/d1/IP170603.pdf]<br />
|-<br />
|5/19/2017<br />
|InP#1707<br />
|0.82<br />
|9.9<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/7/7f/IP170706.pdf]<br />
|-<br />
|7/6/2017<br />
|InP#1708<br />
|0.98<br />
|12.1<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/a/ac/IP172520.pdf]<br />
|-<br />
|8/16/2017<br />
|InP#1709<br />
|0.76<br />
|8<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/fa/IP172805.pdf]<br />
|-<br />
|8/28/2017<br />
|InP#1710<br />
|1<br />
|11.7<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/a/aa/IP172905.pdf]<br />
|-<br />
|10/11/2017<br />
|InP#1711<br />
|1<br />
|11<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/9/97/IP173009.pdf]<br />
|-<br />
|10/23/2017<br />
|InP#1712<br />
|1.11<br />
|13.1<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/4/41/IP173107.pdf]<br />
|-<br />
|11/21/2017<br />
|InP#1713<br />
|1.04<br />
|12.1<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/02/IP173203.pdf]<br />
|-<br />
|12/7/2017<br />
|InP#1714<br />
|0.96<br />
|10.4<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/03/IP173306.pdf]<br />
|-<br />
|1/2/2018<br />
|InP#1801<br />
|1.44<br />
|14.3<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/0d/IP180104.pdf]<br />
|-<br />
|3/1/2018<br />
|InP#1802<br />
|0.96<br />
|9<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/6/65/IP180207.pdf]<br />
|-<br />
|4/5/2018<br />
|InP#1803<br />
|1.05<br />
|11.9<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/c/c7/IP180304.pdf]<br />
|-<br />
|4/10/2018<br />
|InP#1804<br />
|1.12<br />
|12.8<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/1/17/IP180406.pdf]<br />
|-<br />
|4/26/2018<br />
|InP#1805<br />
|1.29<br />
|13.6<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/c/c8/IP180508.pdf]<br />
|-<br />
|5/22/2018<br />
|InP#1806<br />
|0.88<br />
|8.4<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/e/e1/IP180606.pdf]<br />
|-<br />
|8/7/2018<br />
|InP#1807<br />
|0.81<br />
|8.0<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/fb/IP180705.pdf]<br />
|-<br />
|10/3/2018<br />
|InP#1808<br />
|1.01<br />
|13.7<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/e/e5/IP180805.pdf]<br />
|-<br />
|12/10/2018<br />
|InP#1809<br />
|1.01<br />
|11.4<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/8/84/IP180909.pdf]<br />
|-<br />
|1/31/2019<br />
|InP#1901<br />
|0.88<br />
|9.7<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/b/b7/IP190101.pdf][https://wiki.nanotech.ucsb.edu/wiki/images/0/06/IP190103.pdf]<br />
|-<br />
|8/30/2020<br />
|InP#2001<br />
|1.11<br />
|10.4<br />
|[https://wiki.nanotech.ucsb.edu/w/images/8/8d/IP020104.pdf]<br />
|-<br />
|2/3/2021<br />
|InP#2101<br />
|1.30<br />
|16<br />
|[https://wiki.nanotech.ucsb.edu/w/images/4/47/IP210117.pdf][https://wiki.nanotech.ucsb.edu/w/images/d/d4/IP210119.pdf]<br />
|-<br />
|11/8/2021<br />
|InP#2102<br />
|1.24<br />
|13.8<br />
|[https://wiki.nanotech.ucsb.edu/w/images/4/45/IP210201.pdf][https://wiki.nanotech.ucsb.edu/w/images/4/49/IP210212.pdf]<br />
|}</div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=File:IP210212.pdf&diff=159430
File:IP210212.pdf
2021-11-09T00:59:40Z
<p>Ningcao: </p>
<hr />
<div></div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=InP_Etch_Rate_and_Selectivity_(InP/SiO2)&diff=159429
InP Etch Rate and Selectivity (InP/SiO2)
2021-11-09T00:58:50Z
<p>Ningcao: add a SEM</p>
<hr />
<div>{| class="wikitable"<br />
| colspan="4" |[https://wiki.nanotech.ucsb.edu/w/images/4/45/IP210201.pdf 1.4] mT, 125/800W, Cl2/H2/Ar flow-rate=6.3/12.7/2 sccm, chuck temperature=200 C, and etch time=90s (Prior to the etch, do O2 plasma chamber clean for 15 minutes, then, chamber coating with the same recipe and a quarter dummy InP on carrier for 15 minutes.<br />
|<br />
|-<br />
|Date <br />
|Sample#<br />
|InP Etch Rate (um/min)<br />
|Selectivity (InP/SiO2)<br />
|Profile SEM Picture<br />
|-<br />
|10/4/2016<br />
|InP#1613<br />
|0.92<br />
|8.9<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/9/9b/IP161332.pdf]<br />
|-<br />
|12/1/2016<br />
|InP#1614<br />
|0.96<br />
|12.1<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/e/ed/IP161421.pdf]<br />
|-<br />
|12/15/2016<br />
|InP#1615<br />
|0.91<br />
|9.3<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/6/64/IP161510.pdf]<br />
|-<br />
|1/23/2017<br />
|InP#1701<br />
|0.93<br />
|9.4<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/7/7f/IP170106.pdf]<br />
|-<br />
|2/7/2017<br />
|InP#1702<br />
|0.75<br />
|7.7<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/2/2f/IP170208.pdf]<br />
|-<br />
|2/21/2017<br />
|InP#1703<br />
|0.91<br />
|11.3<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/b/b8/IP170302.pdf]<br />
|-<br />
|3/21/2017<br />
|InP#1704<br />
|1.01<br />
|11.3<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/fd/IP170404.pdf]<br />
|-<br />
|4/20/2017<br />
|inP#1705<br />
|0.88<br />
|10.2<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/5/5b/IP170505.pdf]<br />
|-<br />
|5/4/2017<br />
|InP#1706<br />
|0.84<br />
|11<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/d/d1/IP170603.pdf]<br />
|-<br />
|5/19/2017<br />
|InP#1707<br />
|0.82<br />
|9.9<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/7/7f/IP170706.pdf]<br />
|-<br />
|7/6/2017<br />
|InP#1708<br />
|0.98<br />
|12.1<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/a/ac/IP172520.pdf]<br />
|-<br />
|8/16/2017<br />
|InP#1709<br />
|0.76<br />
|8<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/fa/IP172805.pdf]<br />
|-<br />
|8/28/2017<br />
|InP#1710<br />
|1<br />
|11.7<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/a/aa/IP172905.pdf]<br />
|-<br />
|10/11/2017<br />
|InP#1711<br />
|1<br />
|11<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/9/97/IP173009.pdf]<br />
|-<br />
|10/23/2017<br />
|InP#1712<br />
|1.11<br />
|13.1<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/4/41/IP173107.pdf]<br />
|-<br />
|11/21/2017<br />
|InP#1713<br />
|1.04<br />
|12.1<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/02/IP173203.pdf]<br />
|-<br />
|12/7/2017<br />
|InP#1714<br />
|0.96<br />
|10.4<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/03/IP173306.pdf]<br />
|-<br />
|1/2/2018<br />
|InP#1801<br />
|1.44<br />
|14.3<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/0d/IP180104.pdf]<br />
|-<br />
|3/1/2018<br />
|InP#1802<br />
|0.96<br />
|9<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/6/65/IP180207.pdf]<br />
|-<br />
|4/5/2018<br />
|InP#1803<br />
|1.05<br />
|11.9<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/c/c7/IP180304.pdf]<br />
|-<br />
|4/10/2018<br />
|InP#1804<br />
|1.12<br />
|12.8<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/1/17/IP180406.pdf]<br />
|-<br />
|4/26/2018<br />
|InP#1805<br />
|1.29<br />
|13.6<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/c/c8/IP180508.pdf]<br />
|-<br />
|5/22/2018<br />
|InP#1806<br />
|0.88<br />
|8.4<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/e/e1/IP180606.pdf]<br />
|-<br />
|8/7/2018<br />
|InP#1807<br />
|0.81<br />
|8.0<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/fb/IP180705.pdf]<br />
|-<br />
|10/3/2018<br />
|InP#1808<br />
|1.01<br />
|13.7<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/e/e5/IP180805.pdf]<br />
|-<br />
|12/10/2018<br />
|InP#1809<br />
|1.01<br />
|11.4<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/8/84/IP180909.pdf]<br />
|-<br />
|1/31/2019<br />
|InP#1901<br />
|0.88<br />
|9.7<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/b/b7/IP190101.pdf][https://wiki.nanotech.ucsb.edu/wiki/images/0/06/IP190103.pdf]<br />
|-<br />
|8/30/2020<br />
|InP#2001<br />
|1.11<br />
|10.4<br />
|[https://wiki.nanotech.ucsb.edu/w/images/8/8d/IP020104.pdf]<br />
|-<br />
|2/3/2021<br />
|InP#2101<br />
|1.30<br />
|16<br />
|[https://wiki.nanotech.ucsb.edu/w/images/4/47/IP210117.pdf][https://wiki.nanotech.ucsb.edu/w/images/d/d4/IP210119.pdf]<br />
|-<br />
|11/8/2021<br />
|InP#2102<br />
|1.24<br />
|13.8<br />
|[https://wiki.nanotech.ucsb.edu/w/images/4/45/IP210201.pdf]<br />
|}</div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=File:IP210201.pdf&diff=159428
File:IP210201.pdf
2021-11-09T00:56:50Z
<p>Ningcao: </p>
<hr />
<div></div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=InP_Etch_Rate_and_Selectivity_(InP/SiO2)&diff=159427
InP Etch Rate and Selectivity (InP/SiO2)
2021-11-09T00:48:38Z
<p>Ningcao: enter a data point</p>
<hr />
<div>{| class="wikitable"<br />
| colspan="4" |1.4 mT, 125/800W, Cl2/H2/Ar flow-rate=6.3/12.7/2 sccm, chuck temperature=200 C, and etch time=90s (Prior to the etch, do O2 plasma chamber clean for 15 minutes, then, chamber coating with the same recipe and a quarter dummy InP on carrier for 15 minutes.<br />
|<br />
|-<br />
|Date <br />
|Sample#<br />
|InP Etch Rate (um/min)<br />
|Selectivity (InP/SiO2)<br />
|Profile SEM Picture<br />
|-<br />
|10/4/2016<br />
|InP#1613<br />
|0.92<br />
|8.9<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/9/9b/IP161332.pdf]<br />
|-<br />
|12/1/2016<br />
|InP#1614<br />
|0.96<br />
|12.1<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/e/ed/IP161421.pdf]<br />
|-<br />
|12/15/2016<br />
|InP#1615<br />
|0.91<br />
|9.3<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/6/64/IP161510.pdf]<br />
|-<br />
|1/23/2017<br />
|InP#1701<br />
|0.93<br />
|9.4<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/7/7f/IP170106.pdf]<br />
|-<br />
|2/7/2017<br />
|InP#1702<br />
|0.75<br />
|7.7<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/2/2f/IP170208.pdf]<br />
|-<br />
|2/21/2017<br />
|InP#1703<br />
|0.91<br />
|11.3<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/b/b8/IP170302.pdf]<br />
|-<br />
|3/21/2017<br />
|InP#1704<br />
|1.01<br />
|11.3<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/fd/IP170404.pdf]<br />
|-<br />
|4/20/2017<br />
|inP#1705<br />
|0.88<br />
|10.2<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/5/5b/IP170505.pdf]<br />
|-<br />
|5/4/2017<br />
|InP#1706<br />
|0.84<br />
|11<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/d/d1/IP170603.pdf]<br />
|-<br />
|5/19/2017<br />
|InP#1707<br />
|0.82<br />
|9.9<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/7/7f/IP170706.pdf]<br />
|-<br />
|7/6/2017<br />
|InP#1708<br />
|0.98<br />
|12.1<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/a/ac/IP172520.pdf]<br />
|-<br />
|8/16/2017<br />
|InP#1709<br />
|0.76<br />
|8<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/fa/IP172805.pdf]<br />
|-<br />
|8/28/2017<br />
|InP#1710<br />
|1<br />
|11.7<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/a/aa/IP172905.pdf]<br />
|-<br />
|10/11/2017<br />
|InP#1711<br />
|1<br />
|11<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/9/97/IP173009.pdf]<br />
|-<br />
|10/23/2017<br />
|InP#1712<br />
|1.11<br />
|13.1<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/4/41/IP173107.pdf]<br />
|-<br />
|11/21/2017<br />
|InP#1713<br />
|1.04<br />
|12.1<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/02/IP173203.pdf]<br />
|-<br />
|12/7/2017<br />
|InP#1714<br />
|0.96<br />
|10.4<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/03/IP173306.pdf]<br />
|-<br />
|1/2/2018<br />
|InP#1801<br />
|1.44<br />
|14.3<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/0d/IP180104.pdf]<br />
|-<br />
|3/1/2018<br />
|InP#1802<br />
|0.96<br />
|9<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/6/65/IP180207.pdf]<br />
|-<br />
|4/5/2018<br />
|InP#1803<br />
|1.05<br />
|11.9<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/c/c7/IP180304.pdf]<br />
|-<br />
|4/10/2018<br />
|InP#1804<br />
|1.12<br />
|12.8<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/1/17/IP180406.pdf]<br />
|-<br />
|4/26/2018<br />
|InP#1805<br />
|1.29<br />
|13.6<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/c/c8/IP180508.pdf]<br />
|-<br />
|5/22/2018<br />
|InP#1806<br />
|0.88<br />
|8.4<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/e/e1/IP180606.pdf]<br />
|-<br />
|8/7/2018<br />
|InP#1807<br />
|0.81<br />
|8.0<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/fb/IP180705.pdf]<br />
|-<br />
|10/3/2018<br />
|InP#1808<br />
|1.01<br />
|13.7<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/e/e5/IP180805.pdf]<br />
|-<br />
|12/10/2018<br />
|InP#1809<br />
|1.01<br />
|11.4<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/8/84/IP180909.pdf]<br />
|-<br />
|1/31/2019<br />
|InP#1901<br />
|0.88<br />
|9.7<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/b/b7/IP190101.pdf][https://wiki.nanotech.ucsb.edu/wiki/images/0/06/IP190103.pdf]<br />
|-<br />
|8/30/2020<br />
|InP#2001<br />
|1.11<br />
|10.4<br />
|[https://wiki.nanotech.ucsb.edu/w/images/8/8d/IP020104.pdf]<br />
|-<br />
|2/3/2021<br />
|InP#2101<br />
|1.30<br />
|16<br />
|[https://wiki.nanotech.ucsb.edu/w/images/4/47/IP210117.pdf][https://wiki.nanotech.ucsb.edu/w/images/d/d4/IP210119.pdf]<br />
|-<br />
|11/8/2021<br />
|InP#2102<br />
|1.24<br />
|13.8<br />
|<br />
|}</div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=Sputtering_Recipes&diff=159263
Sputtering Recipes
2021-09-27T18:39:07Z
<p>Ningcao: /* Materials Table (Sputter 5) */</p>
<hr />
<div>{{recipes|Vacuum Deposition}}<br />
{{rl|Atomic Layer Deposition Recipes|Pt deposition (ALD)}}<br />
<br />
==[[Sputter 3 (AJA ATC 2000-F)]]==<br />
<br />
Please see the [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=20 SignupMonkey Page] for a list of currently installed targets.<br />
<br />
=== Materials Table (Sputter 3) ===<br />
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.<br />
{| class="wikitable sortable"<br />
|-<br />
!Material!!P(mT)!!Pow(W)!!Sub(W)!!T(C)!!Ar!!N2!!O2!!Height-Tilt!!Rate(nm/min)!!Stress(MPa)!!Rs(uOhm-cm)!!n@633nm!!k@633nm<br />
!Target Consumed Lower Limit!!Data Below!!Comment<br />
|-<br />
|Au<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
|Set: 200 W<br />
Read: 400 VDC<br />
|no<br />
|<br />
|-<br />
|Al2O3<br />
|3<br />
|200 (RF2)<br />
|off<br />
|20<br />
|30<br />
|<br />
|1.5<br />
|1.52"-4mm<br />
|5.32<br />
|<br />
|<br />
|1.6478<br />
|0<br />
|<br />
|no<br />
|Demis D. John<br />
|-<br />
|Co||10(5)||200||0||20||25||0||0||25-9||2.3||-||-||-||-<br />
| ||yes||Alex K<br />
|-<br />
|Cr||5||200||0||20||25||0||0||44-4||6.84||-||-||-||-<br />
| ||no||Brian<br />
|-<br />
|Cu||1.5||50(395v)||0||20||25||0||0||25-9||4.15||-||-||-||-<br />
| ||no||Ning<br />
|-<br />
|Cu||5||150(~490v)||0||20||15||0||0||0.82"-9||8||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Fe||10(5)||200||0||20||25||0||0||25-9||1.25||-||-||-||-<br />
| ||No||Alex K<br />
|-<br />
|Mo||3||200||0||20||25||0||0||44-4||13.15||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ni||5||150||0||20||25||0||0||44-4||5.23||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ni||5||150||0||20||25||0||0||25-9||1.82||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ni||5||75||0||20||25||0||0||44-4||2.50||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ni||3||200||0||20||25||0||0||44-4||9.4||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ni||1.5||50(399v)||0||20||25||0||0||25-9||0.96||-||-||-||-<br />
| ||no||Ning<br />
|-<br />
|Pt||3||50||0||20||25||0||0||0.82"-9||2.9||-||-||-||-<br />
| ||no||Ning<br />
|-<br />
|Si||8||250||0||25||25||0||0||15-3||1.4||-||-||-||-<br />
| ||no||Gerhard - ramp 2W/s - 3% Unif 4" wafer<br />
|-<br />
|SiN||3||200||10||20||25||3||0||25-9||1.56||-||-||1.992||-<br />
| ||yes||Brian<br />
|-<br />
|SiN||3||250||10||20||25||2.5||0||25-9||2.1||-||-||2.06||-<br />
| ||yes||Brian<br />
|-<br />
|SiO2||3||200||10||20||25||0||3||25-9||3.68||-||-||1.447||-<br />
| ||yes||Brian<br />
|-<br />
|SiO2||3||200||10||20||25||0||5||45-3||2.60||-||-||1.471||-<br />
| ||yes||Brian<br />
|-<br />
|SiO2||3||250||10||20||25||0||2.5||25-9||4.3||-||-||1.485||-<br />
| ||yes||Brian<br />
|-<br />
|Ta||5||150||0||20||25||0||0||44-4||9.47||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ta||5||75||0||20||25||0||0||44-4||5.03||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ti||3||100||0||20||25||0||0||25-9||1.34||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|SampleClean-NativeSiO2||10||0||18||20||25||0||0||44-4||-||-||-||-||-<br />
| ||yes||150Volts 5 min<br />
|-<br />
|}<br />
<br />
===Height Conversion for Older Recipes===<br />
Old recipes using the manual Height setting in millimeters can be converted to the new programmatic settings in inches as follows:<br />
{| class="wikitable"<br />
!Old (mm)<br />
!New (inches)<br />
!Typical Gun Tilt (mm)<br />
|-<br />
|15<br />
|<br />
|<br />
|-<br />
|25<br />
|0.82<br />
|9<br />
|-<br />
|44<br />
|1.52<br />
|4<br />
|}<br />
Interpolation plot [[:File:Sputter 3 - height conversion v1.PNG|can be found here.]]<br />
<br />
===Fe and Co Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/1/15/Fe_and_Co_Films_using_Sputter-3.pdf Fe and Co Deposition Recipe]<br />
<br />
===Cu Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/5/5e/Cu_Film_using_Sputter-3.pdf Cu Deposition Recipe]<br />
<br />
===Mo Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/7/7f/46-Mo_Film_using_Sputter3.pdf Mo Deposition Recipe]<br />
<br />
===Ni and Ta Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/b/b6/24-Ni_and_Ta_Films_using_Sputter-3.pdf Ni and Ta Deposition Recipe]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/9/93/Ni_Sputtering_Film_using_Sputter_3-a.pdf Ni Sputtering Film Recipe-3mT-200W]<br />
<br />
===SiO2 Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/e/ef/SiO2-AJA-1-Reactive-Sputter-Uniformity-rev-1.pdf SiO2 Uniformity Data]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/b/b2/SiO2-AJA-1-Reactive-Sputter-Power-Flow-AFM-Roughness-rev1.pdf SiO2 Flow and Bias Variations Including AFM Data]<br />
<br />
===SiN Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/f/fb/SiN-AJA-1-Reactive-Sputtering-Power-Flow-AFM-Rate-Index-rev1.pdf SiN Flow and RF Variations Including AFM Data]<br />
<br />
===Ti Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/3/3b/Ti_Sputtering_Film_using_Sputter_3.pdf Ti Sputtering Film Recipe-3mT-100W]<br />
<br />
==[[Sputter 4 (AJA ATC 2200-V)]]==<br />
<br />
Please see [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=21 the SignupMonkey page] for a list of currently installed targets.<br />
<br />
=== Materials Table (Sputter 4) ===<br />
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended. <br />
{| class="wikitable sortable"<br />
|-<br />
!Material!!P(mT)<br />
!Power Source!!Pow(W)!!Sub(W)!!T(C)!!Ar!!N2!!O2!!Height-Tilt!!Rate(nm/min)!!Stress(MPa)!!Rs(uOhm-cm)!!n@633nm!!k@633nm!!Data Below!!Comment<br />
|-<br />
|Al||5<br />
| ||200||0||20||45||0||0||H2.75-T5||4.4||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|Al2O3<br />
|3<br />
|RF4-Sw1<br />
|200<br />
|0<br />
|20<br />
|30<br />
|0<br />
|1.5<br />
|H2.75-T5<br />
|5.1<br />
|<br />
|<br />
|1.64202<br />
|0<br />
|partial<br />
|Demis D. John<br />
|-<br />
|Au||5<br />
| ||200||0||20||45||0||0||H1-T10||17.7||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|Au||10<br />
| ||300||0||20||45||0||0||H2.75-T5||45.4||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|Cu<br />
|5<br />
|<br />
|150<br />
|0<br />
|20<br />
|30<br />
|0<br />
|0<br />
|H0.82-T9<br />
|6.7<br />
|<br />
|<br />
|<br />
|<br />
|No (SEM available)<br />
|Ning Cao<br />
|-<br />
|Nb||4<br />
| ||250||0||20||30||0||0||H2.00-T7||7.5||-||-||-||-||No||<br />
|-<br />
|Pt||5<br />
| ||200||0||20||45||0||0||H2.75-T5||7.4||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|Pt||3<br />
| ||50(439V)||0||20||45||0||0||H2.75-T5||3.9||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|Ru<br />
|3<br />
|<br />
|200<br />
|<br />
|<br />
|45<br />
|<br />
|<br />
|H2.75-T4<br />
|~10<br />
|<br />
|<br />
|<br />
|<br />
|Yes<br />
|Ning Cao<br />
|-<br />
|Ti||10<br />
| ||200||0||20||45||0||0||H2.75-T5||2.3||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|TiN||3<br />
| ||150||110V||20||48.25||1.75||0||H2.5-T5||2||-||60||-||-||No||<br />
|-<br />
|TiO<sub>2</sub>||3<br />
| ||250(RF:450V)||0||20||45||0||3||H2.75-T5||4.3||-|| ||-||-||Yes||Ning Cao<br />
|-<br />
|TiW||4.5<br />
| ||200||0||20||45||0||0||H1-T10||4.7||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|TiW||4.5<br />
| ||300||0||75||45||0||0||H2.75-T5||9.5||-150 to 150||60||-||-||Yes||10%Ti by Wt<br />
|-<br />
|W||3<br />
| ||300||0||50||45||0||0||H2.75-T5||11.5||-150 to 150||11||-||-||Yes||Jeremy Watcher<br />
|-<br />
<br />
|}<br />
<br />
===Au Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/0/01/Au-Sputter4-5mT-200W-120s.pdf Au Film's AFM Step and Roughness]<br />
<br />
===Al Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/1/17/Al-Sputter4-5mT-200W-30m.pdf Al Film SEM Profile]<br />
<br />
===Al2O3 Deposition (Sputter 4)===<br />
<br />
*Rate: 5.134 nm/min<br />
*[https://en.wikipedia.org/wiki/Cauchy%27s_equation Cauchy] Refractive Index Params (fit from λ=190-1700nm, indicating transparency over this range)<br />
**A = 1.626<br />
**B = 5.980E-3<br />
**C = 1.622E-4<br />
<br />
===Pt Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/a/ab/Pt-Sputter4.pdf Pt Film's AFM Step and Roughness]<br />
<br />
=== Ru Deposition (Sputter 4) ===<br />
* [https://wiki.nanotech.ucsb.edu/w/images/f/f6/SiO2_Etch%2C_Ru_HardMask_-_Fluorine_ICP_Etch_Process_-_Ning_Cao_2019-06.pdf Ruthenium Hardmask for SiO2 Etching - Full Process Traveler] by Ning Cao<br />
** Deposition Rate ~10nm/min<br />
** See [[ICP Etching Recipes#SiO2 Etching|Fluorine-ICP > SiO2 Etching]] page for more info.<br />
<br />
===Ti-Au Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/89/Ti-Au-Sputtering-Films-AJA2-rev1.pdf Ti-Au Deposition Recipe and SEM Cross-Sections]<br />
<br />
===TiO<sub>2</sub> Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/1/19/TiO2_film_using_Sputter4.pdf TiO<sub>2</sub> Film's Refractive Index Spectrum, Resistivity, AFM Roughness]<br />
<br />
===TiW Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/7/78/TiW-Sputter4-4.5mT-300W-300s.pdf TiW Film's AFM Step and Roughness]<br />
===W-TiW Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/c/cc/W-TiW-Sputtering-AJA-4-Data-Recipe-RevB.pdf W-TiW Deposition Recipe]<br />
<br />
==[[Sputter 5 (AJA ATC 2200-V)]]==<br />
<br />
Please see the [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=60 SignupMonkey] page for a list of currently installed targets.<br />
<br />
=== Materials Table (Sputter 5) ===<br />
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.<br />
{| class="wikitable sortable"<br />
|-<br />
!Material!!P(mT)<br />
!Power Source!!Pow(W)!!Sub(V)!!T(C)!!Ar!!N2!!O2!!Height-Tilt!!Rate(nm/min)!!Stress(MPa)!!Rs(uOhm-cm)!!Rq(nm)!!n@633nm!!k@633nm!!LPDb/LPDa*!!Data Below!!Comment<br />
|-<br />
|Al<br />
|5<br />
|<br />
|250<br />
|0<br />
|20<br />
|45<br />
|0<br />
|0<br />
|H1-T10<br />
|2.5<br />
|22<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|No (SEM available)<br />
|Ning<br />
|-<br />
|Al2O3<br />
|1.5<br />
|DC5-SW1<br />
|150<br />
| -<br />
| -<br />
|45<br />
| -<br />
|5<br />
|H2.75-T5<br />
|5.3<br />
|?<br />
|?<br />
|?<br />
|1.641<br />
| -<br />
|?<br />
|No<br />
|Demis 2018-04-13<br />
|-<br />
|Pt<br />
|3.0<br />
|<br />
|200(507v)<br />
| -<br />
| -<br />
|45<br />
| -<br />
| -<br />
|H1-T10<br />
|7.03<br />
|?<br />
|?<br />
|?<br />
|2.068<br />
|4.951<br />
|?<br />
|No<br />
|Ning 2021-09-27<br />
|-<br />
|SiO2||3<br />
| ||250||120||20||45||0||2||H1.0-T10||2.32|| ||-||-||1.49||-||153/6384||No||Biljana<br />
|-<br />
|SiO2||3<br />
| ||250||120||20||45||0||4.5||H1.0-T10||2.29||-515||-||0.210||1.49|| ||138/4445||No ( AFM available)||Biljana<br />
|-<br />
|SiO2||3<br />
| ||250||120||20||45||0||6||H1.0-T10||2.32|| ||-||-||1.49||-||27/1515||Yes||Biljana<br />
|-<br />
|Ti<br />
|3.0<br />
|<br />
|200(374v)<br />
| -<br />
| -<br />
|45<br />
| -<br />
| -<br />
|H1-T10<br />
|2.52<br />
|?<br />
|?<br />
|?<br />
|2.679<br />
|1.853<br />
|?<br />
|No<br />
|Ning 2021-09-27<br />
|}<br />
''*LPD: light particle detection:''<br />
<br />
*''LPDb: light particle detection before deposition''<br />
*''LPDa: light particle detection after deposition''<br />
<br />
===SiO2 Deposition (Sputter 5)===<br />
<br />
*[https://docs.google.com/spreadsheets/d/1kzrbXdUJNf_-FjLJd-PTrbGDhGCKNNxo_JaOXkSpAF8/edit#gid=Sputter#5 SiO2 film]<br />
<br />
==[[Ion Beam Deposition (Veeco NEXUS)]]==<br />
<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AuBs1GfMrpnXcEdXanZQNko3X0lUcHhVUlNyYnVDUkE&usp=sharing IBD Calibrations Spreadsheet] - Records of historical film depositions (rates, indices), Uniformity etc.<br />
**'''All users are required to enter their calibration deps (simple test deps only)'''<br />
*[https://docs.google.com/spreadsheets/d/1y704PRxvXf8bbqb79CrISnk2t0FeojYVJIjrAcBU2_w/edit#gid=sharing Particulates in SiO2 and Ta2O5 in 2015]<br />
<br />
===SiO{{sub|2}} deposition (IBD)===<br />
<br />
==== SiO<sub>2</sub> Historical Data ====<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/8d/New_IBD_SiO2_Standard_Recipe.pdf SiO<sub>2</sub> Standard Recipe]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dFRJLUZUdXB4WFA1S1BMMWQ4WndpTWc&usp=drive_web#gid=sharing SiO<sub>2</sub> Data December 2014]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGNyV083bmpzMjZpZ0JFVWhoOUpaN3c#gid=sharing SiO<sub>2</sub> Thickness uniformity 2014]<br />
*[https://docs.google.com/spreadsheets/d/1pxQkTm274CVjzlnE3cZgE5ycgXfIk8cVCAwTg5x7Xx4/edit#gid=sharing SiO<sub>2</sub> Data-15min depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1vYSV7iGIMJsqmlxF6bAjdzuaATcDGxBvwlhb2XYJoWg/edit#gid=sharing SiO<sub>2</sub> Thickness uniformity-15 min depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1qnlny3A8jRUPU-8O1ycx9MUFmpti_pRv93rT1pXHMWM/edit#gid=1868267914=sharing SiO<sub>2</sub> Data-1hr depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/12SKWvqxDuyTgWL44wfvrA2gKDy6ihV2XWh6WJsTT9hE/edit#gid=sharing SiO<sub>2</sub> Thickness uniformity-1hr depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1KPLP68f9oC6H2C39r4_Lcd9RkjPiVnZTiz6sMYoJodc/edit#gid=1868267914=sharing SiO<sub>2</sub> Data-1hr depositions 2016]<br />
*[https://docs.google.com/spreadsheets/d/1dFI1B2WxS7oEGMPl2dlLtmiAin-6EKWSEj9hFezB4_w/edit#gid==sharing SiO<sub>2</sub> Thickness uniformity-1hr depositions 2016]<br />
<br />
====SiO<sub>2</sub> 1hr deposition properties:====<br />
<br />
*Dep.rate: ≈ 5.2 nm/min (users must calibrate this prior to critical deps)<br />
*HF e.r.~350 nm/min<br />
*Stress ≈ -390MPa (compressive)<br />
*Refractive Index: ≈ 1.494<br />
*[[http://en.wikipedia.org/wiki/Cauchy's_equation Cauchy Parameters]] (350-2000nm): <br />
**A = 1.480<br />
**B = 0.00498<br />
**C = -3.2606e-5<br />
<br />
===Si<sub>3</sub>N<sub>4</sub> deposition (IBD)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/d/d3/IBD_SiNdeposition.pdf Si<sub>3</sub>N<sub>4</sub> Standard Recipe]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDE4RldRQnA1N1ptOUlHQVc3QjNXSkE#gid=sharing Si<sub>3</sub>N<sub>4</sub> Data December 2014]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEdsbWRhYW9mbFRLem56TjFFWjRwR1E#gid=sharing Si<sub>3</sub>N<sub>4</sub> Thickness uniformity 2014]<br />
<br />
*Deposition Rate: ≈ 4.10 nm/min (users must calibrate this prior to critical deps)<br />
*HF e.r.~11nm/min<br />
*Stress ≈ -1590MPa (compressive)<br />
*Refractive Index: ≈ 1.969<br />
*[[http://en.wikipedia.org/wiki/Cauchy's_equation Cauchy Parameters]] (350-2000nm): <br />
**A = 2.000<br />
**B = 0.01974<br />
**C = 1.2478e-4<br />
<br />
===SiO<sub>x</sub>N<sub>y</sub> deposition (IBD)===<br />
These are some old (2010), initial characterizations only. A recipe improvement would be to increase the Assist O2+N2 = 60sccm total, increasing repeatability. Contact [[Demis D. John|Demis]] for more info.<br />
{|<br />
![[File:IBD SiON Index @ 623nm vs. O2 Gas Flow - v3 - wiki.jpg|alt=plot showing varying refractive index between Si3N4 and SiO2|none|thumb|250x250px|IBD SiO<sub>x</sub>N<sub>y</sub>: Refractive Index vs. O2/N2 Flow.]]<br />
![[File:IBD SiON - Dep rate vs O2 flow - wiki.png|alt=Rate varies monotonically from 53-5 Å/min.|none|thumb|Dep. Rate of IBD SiO<sub>x</sub>N<sub>y</sub> vs. Assist O<sub>2</sub> flow.]]<br />
|}<br />
<br />
===Ta{{sub|2}}O{{sub|5}} deposition (IBD)===<br />
<br />
==== Ta2O5 Historical Data (IBD) ====<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/85/IBD_Ta2O5_deposition_details.pdf Ta{{sub|2}}O{{sub|5}} Standard Recipe]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGhhUGdCR2JudkZJU3pBemR4bS1GWWc#gid=0=sharing Ta{{sub|2}}O{{sub|5}} Data December 2014]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dE5xbVFyUFZqdTdUN0JRSUNvMGFGb2c#gid=sharing Ta{{sub|2}}O{{sub|5}} Thickness uniformity 2014]<br />
<br />
*[https://docs.google.com/spreadsheets/d/1WRqzTTIX4D7Un-XqHqSB66JuSplrMiZAzGvjYFZ-Gtk/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Data December-15 min depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1BZrNtzHwWqfLhvZW4UY01CUfkObW70MxW9jdLhBcunc/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Thickness uniformity-15 min depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1saOA_9SwcPCkuW7uGgOSXhvtwrMkKJUxeS4wRE9qxQ8/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Data December-1hr depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1wXAtWbbE8dvvulJxJXkwQyejgcrz51t-HH4omTq0scs/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Thickness uniformity-1hr depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1A0bVnVgwPfj5JfAtmgNSeto2Rix8qOfiGO9mpXa433g/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Data December-1hr depositions 2016]<br />
*[https://docs.google.com/spreadsheets/d/1U7XUvluOpgD7tsciZ1pAFGiFsKJKvym6mH5hKaSt5b0/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Thickness uniformity-1hr depositions 2016]<br />
<br />
==== Ta2O5 Deposition/Film Properies (IBD) ====<br />
*Ta2O5 1hr depositions:<br />
*Deposition Rate: ≈ 7.8 nm/min (users must calibrate this prior to critical deps)<br />
*HF e.r.~2 nm/min<br />
*Stress ≈ -232MPa (compressive)<br />
*Refractive Index: ≈ 2.172<br />
*[[http://en.wikipedia.org/wiki/Cauchy's_equation Cauchy Parameters]] (350-2000nm): <br />
**A = 2.1123<br />
**B = 0.018901<br />
**C = -0.016222<br />
<br />
===TiO{{sub|2}} deposition (IBD)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/3/3b/New_IBD_TiO2_deposition.pdf TiO<sub>2</sub> Standard Recipe]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGVXVkM4dEdXaU15M09HNGhJbGUycVE#gid=sharing TiO<sub>2</sub> Data December 2014]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dF9YSW9jTDJzY19MbmVEbUQtVzJVdVE#gid=sharing TiO<sub>2</sub> Thickness uniformity 2014]<br />
<br />
*Deposition Rate: ≈ 1.29 nm/min (users must calibrate this prior to critical deps)<br />
*HF etch rate ~5.34nm/min<br />
*Stress ≈ -445MPa (compressive)<br />
*Refractive Index: ≈ 2.259<br />
*[[http://en.wikipedia.org/wiki/Cauchy's_equation Cauchy Parameters]] (350-2000nm): <br />
**A = 2.435<br />
**B = -4.9045e-4<br />
**C = 0.01309<br />
*Absorbing < ~350nm<br />
<br />
===Al<sub>2</sub>O<sub>3</sub> deposition (IBD)===<br />
<br />
*Al2O3 standard recipe: 1_Al2O3_dep<br />
<br />
*[https://docs.google.com/spreadsheets/d/1Qwxa7rtq2kGeFUQxnjGFgtdCJP4uIX_bdUcCWFvO72g/edit#gid= Al2O3 Data 2018]<br />
*[https://docs.google.com/spreadsheets/d/1rjwDQ0WJOIL7XWx2KWQ4fEPjNkr6GEmiXGmQXZnWFOI/edit#gid= Al2O3 Thickness uniformity 2018]<br />
<br />
*Deposition Rate: ≈ 2.05nm/min (users must calibrate this prior to critical deps)<br />
*HF etch rate ~167nm/min<br />
*Stress ≈ -332MPa (compressive)<br />
*Refractive Index: ≈ 1.656<br />
*[[http://en.wikipedia.org/wiki/Cauchy's_equation Cauchy Parameters]] (350-2000nm):( working on) <br />
**A =<br />
**B =<br />
**C =<br />
*Absorbing < ~350nm<br />
<br />
== Reference Recipes (Disabled Tools) ==<br />
<br />
=== [[Sputter 2 (SFI Endeavor)|<big><u>Sputter 2 (SFI Endeavor)</u></big>]] ===<br />
'''This Tool has been Disabled, and is not available for use any more! These recipes are displayed here for historical/reference purposes only.'''<br />
'''Al Deposition (Sputter 2)'''<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/0/05/20-Al-Sputtering-Film-Sputter-2.pdf Al Deposition Recipe]<br />
'''AlN<sub>x</sub> Deposition (Sputter 2)'''<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/8c/Sputter-2-AlN-Endeavor-rev1.pdf AlN<sub>x</sub> Deposition Recipe]<br />
'''Au Deposition (Sputter 2)'''<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/8a/21-Au-Sputter-film-recipes-Sputter-2.pdf Au Deposition Recipe]<br />
'''TiO<sub>2</sub> Deposition (Sputter 2)'''<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/c/c4/22-TiO2-Film-Sputter-2.pdf TiO2<sub>2</sub> Deposition Recipe]</div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=Sputtering_Recipes&diff=159262
Sputtering Recipes
2021-09-27T18:38:13Z
<p>Ningcao: /* Materials Table (Sputter 5) */</p>
<hr />
<div>{{recipes|Vacuum Deposition}}<br />
{{rl|Atomic Layer Deposition Recipes|Pt deposition (ALD)}}<br />
<br />
==[[Sputter 3 (AJA ATC 2000-F)]]==<br />
<br />
Please see the [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=20 SignupMonkey Page] for a list of currently installed targets.<br />
<br />
=== Materials Table (Sputter 3) ===<br />
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.<br />
{| class="wikitable sortable"<br />
|-<br />
!Material!!P(mT)!!Pow(W)!!Sub(W)!!T(C)!!Ar!!N2!!O2!!Height-Tilt!!Rate(nm/min)!!Stress(MPa)!!Rs(uOhm-cm)!!n@633nm!!k@633nm<br />
!Target Consumed Lower Limit!!Data Below!!Comment<br />
|-<br />
|Au<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
|Set: 200 W<br />
Read: 400 VDC<br />
|no<br />
|<br />
|-<br />
|Al2O3<br />
|3<br />
|200 (RF2)<br />
|off<br />
|20<br />
|30<br />
|<br />
|1.5<br />
|1.52"-4mm<br />
|5.32<br />
|<br />
|<br />
|1.6478<br />
|0<br />
|<br />
|no<br />
|Demis D. John<br />
|-<br />
|Co||10(5)||200||0||20||25||0||0||25-9||2.3||-||-||-||-<br />
| ||yes||Alex K<br />
|-<br />
|Cr||5||200||0||20||25||0||0||44-4||6.84||-||-||-||-<br />
| ||no||Brian<br />
|-<br />
|Cu||1.5||50(395v)||0||20||25||0||0||25-9||4.15||-||-||-||-<br />
| ||no||Ning<br />
|-<br />
|Cu||5||150(~490v)||0||20||15||0||0||0.82"-9||8||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Fe||10(5)||200||0||20||25||0||0||25-9||1.25||-||-||-||-<br />
| ||No||Alex K<br />
|-<br />
|Mo||3||200||0||20||25||0||0||44-4||13.15||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ni||5||150||0||20||25||0||0||44-4||5.23||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ni||5||150||0||20||25||0||0||25-9||1.82||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ni||5||75||0||20||25||0||0||44-4||2.50||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ni||3||200||0||20||25||0||0||44-4||9.4||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ni||1.5||50(399v)||0||20||25||0||0||25-9||0.96||-||-||-||-<br />
| ||no||Ning<br />
|-<br />
|Pt||3||50||0||20||25||0||0||0.82"-9||2.9||-||-||-||-<br />
| ||no||Ning<br />
|-<br />
|Si||8||250||0||25||25||0||0||15-3||1.4||-||-||-||-<br />
| ||no||Gerhard - ramp 2W/s - 3% Unif 4" wafer<br />
|-<br />
|SiN||3||200||10||20||25||3||0||25-9||1.56||-||-||1.992||-<br />
| ||yes||Brian<br />
|-<br />
|SiN||3||250||10||20||25||2.5||0||25-9||2.1||-||-||2.06||-<br />
| ||yes||Brian<br />
|-<br />
|SiO2||3||200||10||20||25||0||3||25-9||3.68||-||-||1.447||-<br />
| ||yes||Brian<br />
|-<br />
|SiO2||3||200||10||20||25||0||5||45-3||2.60||-||-||1.471||-<br />
| ||yes||Brian<br />
|-<br />
|SiO2||3||250||10||20||25||0||2.5||25-9||4.3||-||-||1.485||-<br />
| ||yes||Brian<br />
|-<br />
|Ta||5||150||0||20||25||0||0||44-4||9.47||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ta||5||75||0||20||25||0||0||44-4||5.03||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ti||3||100||0||20||25||0||0||25-9||1.34||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|SampleClean-NativeSiO2||10||0||18||20||25||0||0||44-4||-||-||-||-||-<br />
| ||yes||150Volts 5 min<br />
|-<br />
|}<br />
<br />
===Height Conversion for Older Recipes===<br />
Old recipes using the manual Height setting in millimeters can be converted to the new programmatic settings in inches as follows:<br />
{| class="wikitable"<br />
!Old (mm)<br />
!New (inches)<br />
!Typical Gun Tilt (mm)<br />
|-<br />
|15<br />
|<br />
|<br />
|-<br />
|25<br />
|0.82<br />
|9<br />
|-<br />
|44<br />
|1.52<br />
|4<br />
|}<br />
Interpolation plot [[:File:Sputter 3 - height conversion v1.PNG|can be found here.]]<br />
<br />
===Fe and Co Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/1/15/Fe_and_Co_Films_using_Sputter-3.pdf Fe and Co Deposition Recipe]<br />
<br />
===Cu Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/5/5e/Cu_Film_using_Sputter-3.pdf Cu Deposition Recipe]<br />
<br />
===Mo Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/7/7f/46-Mo_Film_using_Sputter3.pdf Mo Deposition Recipe]<br />
<br />
===Ni and Ta Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/b/b6/24-Ni_and_Ta_Films_using_Sputter-3.pdf Ni and Ta Deposition Recipe]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/9/93/Ni_Sputtering_Film_using_Sputter_3-a.pdf Ni Sputtering Film Recipe-3mT-200W]<br />
<br />
===SiO2 Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/e/ef/SiO2-AJA-1-Reactive-Sputter-Uniformity-rev-1.pdf SiO2 Uniformity Data]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/b/b2/SiO2-AJA-1-Reactive-Sputter-Power-Flow-AFM-Roughness-rev1.pdf SiO2 Flow and Bias Variations Including AFM Data]<br />
<br />
===SiN Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/f/fb/SiN-AJA-1-Reactive-Sputtering-Power-Flow-AFM-Rate-Index-rev1.pdf SiN Flow and RF Variations Including AFM Data]<br />
<br />
===Ti Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/3/3b/Ti_Sputtering_Film_using_Sputter_3.pdf Ti Sputtering Film Recipe-3mT-100W]<br />
<br />
==[[Sputter 4 (AJA ATC 2200-V)]]==<br />
<br />
Please see [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=21 the SignupMonkey page] for a list of currently installed targets.<br />
<br />
=== Materials Table (Sputter 4) ===<br />
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended. <br />
{| class="wikitable sortable"<br />
|-<br />
!Material!!P(mT)<br />
!Power Source!!Pow(W)!!Sub(W)!!T(C)!!Ar!!N2!!O2!!Height-Tilt!!Rate(nm/min)!!Stress(MPa)!!Rs(uOhm-cm)!!n@633nm!!k@633nm!!Data Below!!Comment<br />
|-<br />
|Al||5<br />
| ||200||0||20||45||0||0||H2.75-T5||4.4||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|Al2O3<br />
|3<br />
|RF4-Sw1<br />
|200<br />
|0<br />
|20<br />
|30<br />
|0<br />
|1.5<br />
|H2.75-T5<br />
|5.1<br />
|<br />
|<br />
|1.64202<br />
|0<br />
|partial<br />
|Demis D. John<br />
|-<br />
|Au||5<br />
| ||200||0||20||45||0||0||H1-T10||17.7||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|Au||10<br />
| ||300||0||20||45||0||0||H2.75-T5||45.4||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|Cu<br />
|5<br />
|<br />
|150<br />
|0<br />
|20<br />
|30<br />
|0<br />
|0<br />
|H0.82-T9<br />
|6.7<br />
|<br />
|<br />
|<br />
|<br />
|No (SEM available)<br />
|Ning Cao<br />
|-<br />
|Nb||4<br />
| ||250||0||20||30||0||0||H2.00-T7||7.5||-||-||-||-||No||<br />
|-<br />
|Pt||5<br />
| ||200||0||20||45||0||0||H2.75-T5||7.4||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|Pt||3<br />
| ||50(439V)||0||20||45||0||0||H2.75-T5||3.9||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|Ru<br />
|3<br />
|<br />
|200<br />
|<br />
|<br />
|45<br />
|<br />
|<br />
|H2.75-T4<br />
|~10<br />
|<br />
|<br />
|<br />
|<br />
|Yes<br />
|Ning Cao<br />
|-<br />
|Ti||10<br />
| ||200||0||20||45||0||0||H2.75-T5||2.3||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|TiN||3<br />
| ||150||110V||20||48.25||1.75||0||H2.5-T5||2||-||60||-||-||No||<br />
|-<br />
|TiO<sub>2</sub>||3<br />
| ||250(RF:450V)||0||20||45||0||3||H2.75-T5||4.3||-|| ||-||-||Yes||Ning Cao<br />
|-<br />
|TiW||4.5<br />
| ||200||0||20||45||0||0||H1-T10||4.7||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|TiW||4.5<br />
| ||300||0||75||45||0||0||H2.75-T5||9.5||-150 to 150||60||-||-||Yes||10%Ti by Wt<br />
|-<br />
|W||3<br />
| ||300||0||50||45||0||0||H2.75-T5||11.5||-150 to 150||11||-||-||Yes||Jeremy Watcher<br />
|-<br />
<br />
|}<br />
<br />
===Au Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/0/01/Au-Sputter4-5mT-200W-120s.pdf Au Film's AFM Step and Roughness]<br />
<br />
===Al Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/1/17/Al-Sputter4-5mT-200W-30m.pdf Al Film SEM Profile]<br />
<br />
===Al2O3 Deposition (Sputter 4)===<br />
<br />
*Rate: 5.134 nm/min<br />
*[https://en.wikipedia.org/wiki/Cauchy%27s_equation Cauchy] Refractive Index Params (fit from λ=190-1700nm, indicating transparency over this range)<br />
**A = 1.626<br />
**B = 5.980E-3<br />
**C = 1.622E-4<br />
<br />
===Pt Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/a/ab/Pt-Sputter4.pdf Pt Film's AFM Step and Roughness]<br />
<br />
=== Ru Deposition (Sputter 4) ===<br />
* [https://wiki.nanotech.ucsb.edu/w/images/f/f6/SiO2_Etch%2C_Ru_HardMask_-_Fluorine_ICP_Etch_Process_-_Ning_Cao_2019-06.pdf Ruthenium Hardmask for SiO2 Etching - Full Process Traveler] by Ning Cao<br />
** Deposition Rate ~10nm/min<br />
** See [[ICP Etching Recipes#SiO2 Etching|Fluorine-ICP > SiO2 Etching]] page for more info.<br />
<br />
===Ti-Au Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/89/Ti-Au-Sputtering-Films-AJA2-rev1.pdf Ti-Au Deposition Recipe and SEM Cross-Sections]<br />
<br />
===TiO<sub>2</sub> Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/1/19/TiO2_film_using_Sputter4.pdf TiO<sub>2</sub> Film's Refractive Index Spectrum, Resistivity, AFM Roughness]<br />
<br />
===TiW Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/7/78/TiW-Sputter4-4.5mT-300W-300s.pdf TiW Film's AFM Step and Roughness]<br />
===W-TiW Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/c/cc/W-TiW-Sputtering-AJA-4-Data-Recipe-RevB.pdf W-TiW Deposition Recipe]<br />
<br />
==[[Sputter 5 (AJA ATC 2200-V)]]==<br />
<br />
Please see the [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=60 SignupMonkey] page for a list of currently installed targets.<br />
<br />
=== Materials Table (Sputter 5) ===<br />
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.<br />
{| class="wikitable sortable"<br />
|-<br />
!Material!!P(mT)<br />
!Power Source!!Pow(W)!!Sub(V)!!T(C)!!Ar!!N2!!O2!!Height-Tilt!!Rate(nm/min)!!Stress(MPa)!!Rs(uOhm-cm)!!Rq(nm)!!n@633nm!!k@633nm!!LPDb/LPDa*!!Data Below!!Comment<br />
|-<br />
|Al<br />
|5<br />
|<br />
|250<br />
|0<br />
|20<br />
|45<br />
|0<br />
|0<br />
|H1-T10<br />
|2.5<br />
|22<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|No (SEM available)<br />
|Ning<br />
|-<br />
|Al2O3<br />
|1.5<br />
|DC5-SW1<br />
|150<br />
| -<br />
| -<br />
|45<br />
| -<br />
|5<br />
|H2.75-T5<br />
|5.3<br />
|?<br />
|?<br />
|?<br />
|1.641<br />
| -<br />
|?<br />
|No<br />
|Demis 2018-04-13<br />
|-<br />
|Pt<br />
|3.0<br />
|<br />
|200(507 v)<br />
| -<br />
| -<br />
|45<br />
| -<br />
| -<br />
|H1-T10<br />
|7.03<br />
|?<br />
|?<br />
|?<br />
|2.068<br />
|4.951<br />
|?<br />
|No<br />
|Ning 2021-09-27<br />
|-<br />
|SiO2||3<br />
| ||250||120||20||45||0||2||H1.0-T10||2.32|| ||-||-||1.49||-||153/6384||No||Biljana<br />
|-<br />
|SiO2||3<br />
| ||250||120||20||45||0||4.5||H1.0-T10||2.29||-515||-||0.210||1.49|| ||138/4445||No ( AFM available)||Biljana<br />
|-<br />
|SiO2||3<br />
| ||250||120||20||45||0||6||H1.0-T10||2.32|| ||-||-||1.49||-||27/1515||Yes||Biljana<br />
|-<br />
|Ti<br />
|3.0<br />
|<br />
|200(374v)<br />
| -<br />
| -<br />
|45<br />
| -<br />
| -<br />
|H1-T10<br />
|2.52<br />
|?<br />
|?<br />
|?<br />
|2.679<br />
|1.853<br />
|?<br />
|No<br />
|Ning 2021-09-27<br />
|}<br />
''*LPD: light particle detection:''<br />
<br />
*''LPDb: light particle detection before deposition''<br />
*''LPDa: light particle detection after deposition''<br />
<br />
===SiO2 Deposition (Sputter 5)===<br />
<br />
*[https://docs.google.com/spreadsheets/d/1kzrbXdUJNf_-FjLJd-PTrbGDhGCKNNxo_JaOXkSpAF8/edit#gid=Sputter#5 SiO2 film]<br />
<br />
==[[Ion Beam Deposition (Veeco NEXUS)]]==<br />
<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AuBs1GfMrpnXcEdXanZQNko3X0lUcHhVUlNyYnVDUkE&usp=sharing IBD Calibrations Spreadsheet] - Records of historical film depositions (rates, indices), Uniformity etc.<br />
**'''All users are required to enter their calibration deps (simple test deps only)'''<br />
*[https://docs.google.com/spreadsheets/d/1y704PRxvXf8bbqb79CrISnk2t0FeojYVJIjrAcBU2_w/edit#gid=sharing Particulates in SiO2 and Ta2O5 in 2015]<br />
<br />
===SiO{{sub|2}} deposition (IBD)===<br />
<br />
==== SiO<sub>2</sub> Historical Data ====<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/8d/New_IBD_SiO2_Standard_Recipe.pdf SiO<sub>2</sub> Standard Recipe]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dFRJLUZUdXB4WFA1S1BMMWQ4WndpTWc&usp=drive_web#gid=sharing SiO<sub>2</sub> Data December 2014]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGNyV083bmpzMjZpZ0JFVWhoOUpaN3c#gid=sharing SiO<sub>2</sub> Thickness uniformity 2014]<br />
*[https://docs.google.com/spreadsheets/d/1pxQkTm274CVjzlnE3cZgE5ycgXfIk8cVCAwTg5x7Xx4/edit#gid=sharing SiO<sub>2</sub> Data-15min depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1vYSV7iGIMJsqmlxF6bAjdzuaATcDGxBvwlhb2XYJoWg/edit#gid=sharing SiO<sub>2</sub> Thickness uniformity-15 min depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1qnlny3A8jRUPU-8O1ycx9MUFmpti_pRv93rT1pXHMWM/edit#gid=1868267914=sharing SiO<sub>2</sub> Data-1hr depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/12SKWvqxDuyTgWL44wfvrA2gKDy6ihV2XWh6WJsTT9hE/edit#gid=sharing SiO<sub>2</sub> Thickness uniformity-1hr depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1KPLP68f9oC6H2C39r4_Lcd9RkjPiVnZTiz6sMYoJodc/edit#gid=1868267914=sharing SiO<sub>2</sub> Data-1hr depositions 2016]<br />
*[https://docs.google.com/spreadsheets/d/1dFI1B2WxS7oEGMPl2dlLtmiAin-6EKWSEj9hFezB4_w/edit#gid==sharing SiO<sub>2</sub> Thickness uniformity-1hr depositions 2016]<br />
<br />
====SiO<sub>2</sub> 1hr deposition properties:====<br />
<br />
*Dep.rate: ≈ 5.2 nm/min (users must calibrate this prior to critical deps)<br />
*HF e.r.~350 nm/min<br />
*Stress ≈ -390MPa (compressive)<br />
*Refractive Index: ≈ 1.494<br />
*[[http://en.wikipedia.org/wiki/Cauchy's_equation Cauchy Parameters]] (350-2000nm): <br />
**A = 1.480<br />
**B = 0.00498<br />
**C = -3.2606e-5<br />
<br />
===Si<sub>3</sub>N<sub>4</sub> deposition (IBD)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/d/d3/IBD_SiNdeposition.pdf Si<sub>3</sub>N<sub>4</sub> Standard Recipe]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDE4RldRQnA1N1ptOUlHQVc3QjNXSkE#gid=sharing Si<sub>3</sub>N<sub>4</sub> Data December 2014]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEdsbWRhYW9mbFRLem56TjFFWjRwR1E#gid=sharing Si<sub>3</sub>N<sub>4</sub> Thickness uniformity 2014]<br />
<br />
*Deposition Rate: ≈ 4.10 nm/min (users must calibrate this prior to critical deps)<br />
*HF e.r.~11nm/min<br />
*Stress ≈ -1590MPa (compressive)<br />
*Refractive Index: ≈ 1.969<br />
*[[http://en.wikipedia.org/wiki/Cauchy's_equation Cauchy Parameters]] (350-2000nm): <br />
**A = 2.000<br />
**B = 0.01974<br />
**C = 1.2478e-4<br />
<br />
===SiO<sub>x</sub>N<sub>y</sub> deposition (IBD)===<br />
These are some old (2010), initial characterizations only. A recipe improvement would be to increase the Assist O2+N2 = 60sccm total, increasing repeatability. Contact [[Demis D. John|Demis]] for more info.<br />
{|<br />
![[File:IBD SiON Index @ 623nm vs. O2 Gas Flow - v3 - wiki.jpg|alt=plot showing varying refractive index between Si3N4 and SiO2|none|thumb|250x250px|IBD SiO<sub>x</sub>N<sub>y</sub>: Refractive Index vs. O2/N2 Flow.]]<br />
![[File:IBD SiON - Dep rate vs O2 flow - wiki.png|alt=Rate varies monotonically from 53-5 Å/min.|none|thumb|Dep. Rate of IBD SiO<sub>x</sub>N<sub>y</sub> vs. Assist O<sub>2</sub> flow.]]<br />
|}<br />
<br />
===Ta{{sub|2}}O{{sub|5}} deposition (IBD)===<br />
<br />
==== Ta2O5 Historical Data (IBD) ====<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/85/IBD_Ta2O5_deposition_details.pdf Ta{{sub|2}}O{{sub|5}} Standard Recipe]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGhhUGdCR2JudkZJU3pBemR4bS1GWWc#gid=0=sharing Ta{{sub|2}}O{{sub|5}} Data December 2014]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dE5xbVFyUFZqdTdUN0JRSUNvMGFGb2c#gid=sharing Ta{{sub|2}}O{{sub|5}} Thickness uniformity 2014]<br />
<br />
*[https://docs.google.com/spreadsheets/d/1WRqzTTIX4D7Un-XqHqSB66JuSplrMiZAzGvjYFZ-Gtk/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Data December-15 min depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1BZrNtzHwWqfLhvZW4UY01CUfkObW70MxW9jdLhBcunc/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Thickness uniformity-15 min depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1saOA_9SwcPCkuW7uGgOSXhvtwrMkKJUxeS4wRE9qxQ8/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Data December-1hr depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1wXAtWbbE8dvvulJxJXkwQyejgcrz51t-HH4omTq0scs/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Thickness uniformity-1hr depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1A0bVnVgwPfj5JfAtmgNSeto2Rix8qOfiGO9mpXa433g/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Data December-1hr depositions 2016]<br />
*[https://docs.google.com/spreadsheets/d/1U7XUvluOpgD7tsciZ1pAFGiFsKJKvym6mH5hKaSt5b0/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Thickness uniformity-1hr depositions 2016]<br />
<br />
==== Ta2O5 Deposition/Film Properies (IBD) ====<br />
*Ta2O5 1hr depositions:<br />
*Deposition Rate: ≈ 7.8 nm/min (users must calibrate this prior to critical deps)<br />
*HF e.r.~2 nm/min<br />
*Stress ≈ -232MPa (compressive)<br />
*Refractive Index: ≈ 2.172<br />
*[[http://en.wikipedia.org/wiki/Cauchy's_equation Cauchy Parameters]] (350-2000nm): <br />
**A = 2.1123<br />
**B = 0.018901<br />
**C = -0.016222<br />
<br />
===TiO{{sub|2}} deposition (IBD)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/3/3b/New_IBD_TiO2_deposition.pdf TiO<sub>2</sub> Standard Recipe]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGVXVkM4dEdXaU15M09HNGhJbGUycVE#gid=sharing TiO<sub>2</sub> Data December 2014]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dF9YSW9jTDJzY19MbmVEbUQtVzJVdVE#gid=sharing TiO<sub>2</sub> Thickness uniformity 2014]<br />
<br />
*Deposition Rate: ≈ 1.29 nm/min (users must calibrate this prior to critical deps)<br />
*HF etch rate ~5.34nm/min<br />
*Stress ≈ -445MPa (compressive)<br />
*Refractive Index: ≈ 2.259<br />
*[[http://en.wikipedia.org/wiki/Cauchy's_equation Cauchy Parameters]] (350-2000nm): <br />
**A = 2.435<br />
**B = -4.9045e-4<br />
**C = 0.01309<br />
*Absorbing < ~350nm<br />
<br />
===Al<sub>2</sub>O<sub>3</sub> deposition (IBD)===<br />
<br />
*Al2O3 standard recipe: 1_Al2O3_dep<br />
<br />
*[https://docs.google.com/spreadsheets/d/1Qwxa7rtq2kGeFUQxnjGFgtdCJP4uIX_bdUcCWFvO72g/edit#gid= Al2O3 Data 2018]<br />
*[https://docs.google.com/spreadsheets/d/1rjwDQ0WJOIL7XWx2KWQ4fEPjNkr6GEmiXGmQXZnWFOI/edit#gid= Al2O3 Thickness uniformity 2018]<br />
<br />
*Deposition Rate: ≈ 2.05nm/min (users must calibrate this prior to critical deps)<br />
*HF etch rate ~167nm/min<br />
*Stress ≈ -332MPa (compressive)<br />
*Refractive Index: ≈ 1.656<br />
*[[http://en.wikipedia.org/wiki/Cauchy's_equation Cauchy Parameters]] (350-2000nm):( working on) <br />
**A =<br />
**B =<br />
**C =<br />
*Absorbing < ~350nm<br />
<br />
== Reference Recipes (Disabled Tools) ==<br />
<br />
=== [[Sputter 2 (SFI Endeavor)|<big><u>Sputter 2 (SFI Endeavor)</u></big>]] ===<br />
'''This Tool has been Disabled, and is not available for use any more! These recipes are displayed here for historical/reference purposes only.'''<br />
'''Al Deposition (Sputter 2)'''<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/0/05/20-Al-Sputtering-Film-Sputter-2.pdf Al Deposition Recipe]<br />
'''AlN<sub>x</sub> Deposition (Sputter 2)'''<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/8c/Sputter-2-AlN-Endeavor-rev1.pdf AlN<sub>x</sub> Deposition Recipe]<br />
'''Au Deposition (Sputter 2)'''<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/8a/21-Au-Sputter-film-recipes-Sputter-2.pdf Au Deposition Recipe]<br />
'''TiO<sub>2</sub> Deposition (Sputter 2)'''<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/c/c4/22-TiO2-Film-Sputter-2.pdf TiO2<sub>2</sub> Deposition Recipe]</div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=Sputtering_Recipes&diff=159261
Sputtering Recipes
2021-09-27T18:37:40Z
<p>Ningcao: /* Materials Table (Sputter 5) */</p>
<hr />
<div>{{recipes|Vacuum Deposition}}<br />
{{rl|Atomic Layer Deposition Recipes|Pt deposition (ALD)}}<br />
<br />
==[[Sputter 3 (AJA ATC 2000-F)]]==<br />
<br />
Please see the [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=20 SignupMonkey Page] for a list of currently installed targets.<br />
<br />
=== Materials Table (Sputter 3) ===<br />
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.<br />
{| class="wikitable sortable"<br />
|-<br />
!Material!!P(mT)!!Pow(W)!!Sub(W)!!T(C)!!Ar!!N2!!O2!!Height-Tilt!!Rate(nm/min)!!Stress(MPa)!!Rs(uOhm-cm)!!n@633nm!!k@633nm<br />
!Target Consumed Lower Limit!!Data Below!!Comment<br />
|-<br />
|Au<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
|Set: 200 W<br />
Read: 400 VDC<br />
|no<br />
|<br />
|-<br />
|Al2O3<br />
|3<br />
|200 (RF2)<br />
|off<br />
|20<br />
|30<br />
|<br />
|1.5<br />
|1.52"-4mm<br />
|5.32<br />
|<br />
|<br />
|1.6478<br />
|0<br />
|<br />
|no<br />
|Demis D. John<br />
|-<br />
|Co||10(5)||200||0||20||25||0||0||25-9||2.3||-||-||-||-<br />
| ||yes||Alex K<br />
|-<br />
|Cr||5||200||0||20||25||0||0||44-4||6.84||-||-||-||-<br />
| ||no||Brian<br />
|-<br />
|Cu||1.5||50(395v)||0||20||25||0||0||25-9||4.15||-||-||-||-<br />
| ||no||Ning<br />
|-<br />
|Cu||5||150(~490v)||0||20||15||0||0||0.82"-9||8||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Fe||10(5)||200||0||20||25||0||0||25-9||1.25||-||-||-||-<br />
| ||No||Alex K<br />
|-<br />
|Mo||3||200||0||20||25||0||0||44-4||13.15||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ni||5||150||0||20||25||0||0||44-4||5.23||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ni||5||150||0||20||25||0||0||25-9||1.82||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ni||5||75||0||20||25||0||0||44-4||2.50||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ni||3||200||0||20||25||0||0||44-4||9.4||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ni||1.5||50(399v)||0||20||25||0||0||25-9||0.96||-||-||-||-<br />
| ||no||Ning<br />
|-<br />
|Pt||3||50||0||20||25||0||0||0.82"-9||2.9||-||-||-||-<br />
| ||no||Ning<br />
|-<br />
|Si||8||250||0||25||25||0||0||15-3||1.4||-||-||-||-<br />
| ||no||Gerhard - ramp 2W/s - 3% Unif 4" wafer<br />
|-<br />
|SiN||3||200||10||20||25||3||0||25-9||1.56||-||-||1.992||-<br />
| ||yes||Brian<br />
|-<br />
|SiN||3||250||10||20||25||2.5||0||25-9||2.1||-||-||2.06||-<br />
| ||yes||Brian<br />
|-<br />
|SiO2||3||200||10||20||25||0||3||25-9||3.68||-||-||1.447||-<br />
| ||yes||Brian<br />
|-<br />
|SiO2||3||200||10||20||25||0||5||45-3||2.60||-||-||1.471||-<br />
| ||yes||Brian<br />
|-<br />
|SiO2||3||250||10||20||25||0||2.5||25-9||4.3||-||-||1.485||-<br />
| ||yes||Brian<br />
|-<br />
|Ta||5||150||0||20||25||0||0||44-4||9.47||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ta||5||75||0||20||25||0||0||44-4||5.03||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ti||3||100||0||20||25||0||0||25-9||1.34||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|SampleClean-NativeSiO2||10||0||18||20||25||0||0||44-4||-||-||-||-||-<br />
| ||yes||150Volts 5 min<br />
|-<br />
|}<br />
<br />
===Height Conversion for Older Recipes===<br />
Old recipes using the manual Height setting in millimeters can be converted to the new programmatic settings in inches as follows:<br />
{| class="wikitable"<br />
!Old (mm)<br />
!New (inches)<br />
!Typical Gun Tilt (mm)<br />
|-<br />
|15<br />
|<br />
|<br />
|-<br />
|25<br />
|0.82<br />
|9<br />
|-<br />
|44<br />
|1.52<br />
|4<br />
|}<br />
Interpolation plot [[:File:Sputter 3 - height conversion v1.PNG|can be found here.]]<br />
<br />
===Fe and Co Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/1/15/Fe_and_Co_Films_using_Sputter-3.pdf Fe and Co Deposition Recipe]<br />
<br />
===Cu Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/5/5e/Cu_Film_using_Sputter-3.pdf Cu Deposition Recipe]<br />
<br />
===Mo Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/7/7f/46-Mo_Film_using_Sputter3.pdf Mo Deposition Recipe]<br />
<br />
===Ni and Ta Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/b/b6/24-Ni_and_Ta_Films_using_Sputter-3.pdf Ni and Ta Deposition Recipe]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/9/93/Ni_Sputtering_Film_using_Sputter_3-a.pdf Ni Sputtering Film Recipe-3mT-200W]<br />
<br />
===SiO2 Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/e/ef/SiO2-AJA-1-Reactive-Sputter-Uniformity-rev-1.pdf SiO2 Uniformity Data]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/b/b2/SiO2-AJA-1-Reactive-Sputter-Power-Flow-AFM-Roughness-rev1.pdf SiO2 Flow and Bias Variations Including AFM Data]<br />
<br />
===SiN Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/f/fb/SiN-AJA-1-Reactive-Sputtering-Power-Flow-AFM-Rate-Index-rev1.pdf SiN Flow and RF Variations Including AFM Data]<br />
<br />
===Ti Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/3/3b/Ti_Sputtering_Film_using_Sputter_3.pdf Ti Sputtering Film Recipe-3mT-100W]<br />
<br />
==[[Sputter 4 (AJA ATC 2200-V)]]==<br />
<br />
Please see [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=21 the SignupMonkey page] for a list of currently installed targets.<br />
<br />
=== Materials Table (Sputter 4) ===<br />
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended. <br />
{| class="wikitable sortable"<br />
|-<br />
!Material!!P(mT)<br />
!Power Source!!Pow(W)!!Sub(W)!!T(C)!!Ar!!N2!!O2!!Height-Tilt!!Rate(nm/min)!!Stress(MPa)!!Rs(uOhm-cm)!!n@633nm!!k@633nm!!Data Below!!Comment<br />
|-<br />
|Al||5<br />
| ||200||0||20||45||0||0||H2.75-T5||4.4||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|Al2O3<br />
|3<br />
|RF4-Sw1<br />
|200<br />
|0<br />
|20<br />
|30<br />
|0<br />
|1.5<br />
|H2.75-T5<br />
|5.1<br />
|<br />
|<br />
|1.64202<br />
|0<br />
|partial<br />
|Demis D. John<br />
|-<br />
|Au||5<br />
| ||200||0||20||45||0||0||H1-T10||17.7||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|Au||10<br />
| ||300||0||20||45||0||0||H2.75-T5||45.4||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|Cu<br />
|5<br />
|<br />
|150<br />
|0<br />
|20<br />
|30<br />
|0<br />
|0<br />
|H0.82-T9<br />
|6.7<br />
|<br />
|<br />
|<br />
|<br />
|No (SEM available)<br />
|Ning Cao<br />
|-<br />
|Nb||4<br />
| ||250||0||20||30||0||0||H2.00-T7||7.5||-||-||-||-||No||<br />
|-<br />
|Pt||5<br />
| ||200||0||20||45||0||0||H2.75-T5||7.4||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|Pt||3<br />
| ||50(439V)||0||20||45||0||0||H2.75-T5||3.9||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|Ru<br />
|3<br />
|<br />
|200<br />
|<br />
|<br />
|45<br />
|<br />
|<br />
|H2.75-T4<br />
|~10<br />
|<br />
|<br />
|<br />
|<br />
|Yes<br />
|Ning Cao<br />
|-<br />
|Ti||10<br />
| ||200||0||20||45||0||0||H2.75-T5||2.3||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|TiN||3<br />
| ||150||110V||20||48.25||1.75||0||H2.5-T5||2||-||60||-||-||No||<br />
|-<br />
|TiO<sub>2</sub>||3<br />
| ||250(RF:450V)||0||20||45||0||3||H2.75-T5||4.3||-|| ||-||-||Yes||Ning Cao<br />
|-<br />
|TiW||4.5<br />
| ||200||0||20||45||0||0||H1-T10||4.7||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|TiW||4.5<br />
| ||300||0||75||45||0||0||H2.75-T5||9.5||-150 to 150||60||-||-||Yes||10%Ti by Wt<br />
|-<br />
|W||3<br />
| ||300||0||50||45||0||0||H2.75-T5||11.5||-150 to 150||11||-||-||Yes||Jeremy Watcher<br />
|-<br />
<br />
|}<br />
<br />
===Au Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/0/01/Au-Sputter4-5mT-200W-120s.pdf Au Film's AFM Step and Roughness]<br />
<br />
===Al Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/1/17/Al-Sputter4-5mT-200W-30m.pdf Al Film SEM Profile]<br />
<br />
===Al2O3 Deposition (Sputter 4)===<br />
<br />
*Rate: 5.134 nm/min<br />
*[https://en.wikipedia.org/wiki/Cauchy%27s_equation Cauchy] Refractive Index Params (fit from λ=190-1700nm, indicating transparency over this range)<br />
**A = 1.626<br />
**B = 5.980E-3<br />
**C = 1.622E-4<br />
<br />
===Pt Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/a/ab/Pt-Sputter4.pdf Pt Film's AFM Step and Roughness]<br />
<br />
=== Ru Deposition (Sputter 4) ===<br />
* [https://wiki.nanotech.ucsb.edu/w/images/f/f6/SiO2_Etch%2C_Ru_HardMask_-_Fluorine_ICP_Etch_Process_-_Ning_Cao_2019-06.pdf Ruthenium Hardmask for SiO2 Etching - Full Process Traveler] by Ning Cao<br />
** Deposition Rate ~10nm/min<br />
** See [[ICP Etching Recipes#SiO2 Etching|Fluorine-ICP > SiO2 Etching]] page for more info.<br />
<br />
===Ti-Au Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/89/Ti-Au-Sputtering-Films-AJA2-rev1.pdf Ti-Au Deposition Recipe and SEM Cross-Sections]<br />
<br />
===TiO<sub>2</sub> Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/1/19/TiO2_film_using_Sputter4.pdf TiO<sub>2</sub> Film's Refractive Index Spectrum, Resistivity, AFM Roughness]<br />
<br />
===TiW Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/7/78/TiW-Sputter4-4.5mT-300W-300s.pdf TiW Film's AFM Step and Roughness]<br />
===W-TiW Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/c/cc/W-TiW-Sputtering-AJA-4-Data-Recipe-RevB.pdf W-TiW Deposition Recipe]<br />
<br />
==[[Sputter 5 (AJA ATC 2200-V)]]==<br />
<br />
Please see the [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=60 SignupMonkey] page for a list of currently installed targets.<br />
<br />
=== Materials Table (Sputter 5) ===<br />
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.<br />
{| class="wikitable sortable"<br />
|-<br />
!Material!!P(mT)<br />
!Power Source!!Pow(W)!!Sub(V)!!T(C)!!Ar!!N2!!O2!!Height-Tilt!!Rate(nm/min)!!Stress(MPa)!!Rs(uOhm-cm)!!Rq(nm)!!n@633nm!!k@633nm!!LPDb/LPDa*!!Data Below!!Comment<br />
|-<br />
|Al<br />
|5<br />
|<br />
|250<br />
|0<br />
|20<br />
|45<br />
|0<br />
|0<br />
|H1-T10<br />
|2.5<br />
|22<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|No (SEM available)<br />
|Ning<br />
|-<br />
|Al2O3<br />
|1.5<br />
|DC5-SW1<br />
|150<br />
| -<br />
| -<br />
|45<br />
| -<br />
|5<br />
|H2.75-T5<br />
|5.3<br />
|?<br />
|?<br />
|?<br />
|1.641<br />
| -<br />
|?<br />
|No<br />
|Demis 2018-04-13<br />
|-<br />
|Pt<br />
|3.0<br />
|<br />
|200(507 v)<br />
| -<br />
| -<br />
|45<br />
| -<br />
| -<br />
|H1-T10<br />
|7.03<br />
|?<br />
|?<br />
|?<br />
|2.068<br />
|4.951<br />
|?<br />
|No<br />
|Ning 2021-09-27<br />
|-<br />
|SiO2||3<br />
| ||250||120||20||45||0||2||H1.0-T10||2.32|| ||-||-||1.49||-||153/6384||No||Biljana<br />
|-<br />
|SiO2||3<br />
| ||250||120||20||45||0||4.5||H1.0-T10||2.29||-515||-||0.210||1.49|| ||138/4445||No ( AFM available)||Biljana<br />
|-<br />
|SiO2||3<br />
| ||250||120||20||45||0||6||H1.0-T10||2.32|| ||-||-||1.49||-||27/1515||Yes||Biljana<br />
|-<br />
|Ti<br />
|3.0<br />
|<br />
|200 (374 v)<br />
| -<br />
| -<br />
|45<br />
| -<br />
| -<br />
|H1-T10<br />
|2.52<br />
|?<br />
|?<br />
|?<br />
|2.679<br />
|1.853<br />
|?<br />
|No<br />
|Ning 2021-09-27<br />
|}<br />
''*LPD: light particle detection:''<br />
<br />
*''LPDb: light particle detection before deposition''<br />
*''LPDa: light particle detection after deposition''<br />
<br />
===SiO2 Deposition (Sputter 5)===<br />
<br />
*[https://docs.google.com/spreadsheets/d/1kzrbXdUJNf_-FjLJd-PTrbGDhGCKNNxo_JaOXkSpAF8/edit#gid=Sputter#5 SiO2 film]<br />
<br />
==[[Ion Beam Deposition (Veeco NEXUS)]]==<br />
<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AuBs1GfMrpnXcEdXanZQNko3X0lUcHhVUlNyYnVDUkE&usp=sharing IBD Calibrations Spreadsheet] - Records of historical film depositions (rates, indices), Uniformity etc.<br />
**'''All users are required to enter their calibration deps (simple test deps only)'''<br />
*[https://docs.google.com/spreadsheets/d/1y704PRxvXf8bbqb79CrISnk2t0FeojYVJIjrAcBU2_w/edit#gid=sharing Particulates in SiO2 and Ta2O5 in 2015]<br />
<br />
===SiO{{sub|2}} deposition (IBD)===<br />
<br />
==== SiO<sub>2</sub> Historical Data ====<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/8d/New_IBD_SiO2_Standard_Recipe.pdf SiO<sub>2</sub> Standard Recipe]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dFRJLUZUdXB4WFA1S1BMMWQ4WndpTWc&usp=drive_web#gid=sharing SiO<sub>2</sub> Data December 2014]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGNyV083bmpzMjZpZ0JFVWhoOUpaN3c#gid=sharing SiO<sub>2</sub> Thickness uniformity 2014]<br />
*[https://docs.google.com/spreadsheets/d/1pxQkTm274CVjzlnE3cZgE5ycgXfIk8cVCAwTg5x7Xx4/edit#gid=sharing SiO<sub>2</sub> Data-15min depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1vYSV7iGIMJsqmlxF6bAjdzuaATcDGxBvwlhb2XYJoWg/edit#gid=sharing SiO<sub>2</sub> Thickness uniformity-15 min depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1qnlny3A8jRUPU-8O1ycx9MUFmpti_pRv93rT1pXHMWM/edit#gid=1868267914=sharing SiO<sub>2</sub> Data-1hr depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/12SKWvqxDuyTgWL44wfvrA2gKDy6ihV2XWh6WJsTT9hE/edit#gid=sharing SiO<sub>2</sub> Thickness uniformity-1hr depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1KPLP68f9oC6H2C39r4_Lcd9RkjPiVnZTiz6sMYoJodc/edit#gid=1868267914=sharing SiO<sub>2</sub> Data-1hr depositions 2016]<br />
*[https://docs.google.com/spreadsheets/d/1dFI1B2WxS7oEGMPl2dlLtmiAin-6EKWSEj9hFezB4_w/edit#gid==sharing SiO<sub>2</sub> Thickness uniformity-1hr depositions 2016]<br />
<br />
====SiO<sub>2</sub> 1hr deposition properties:====<br />
<br />
*Dep.rate: ≈ 5.2 nm/min (users must calibrate this prior to critical deps)<br />
*HF e.r.~350 nm/min<br />
*Stress ≈ -390MPa (compressive)<br />
*Refractive Index: ≈ 1.494<br />
*[[http://en.wikipedia.org/wiki/Cauchy's_equation Cauchy Parameters]] (350-2000nm): <br />
**A = 1.480<br />
**B = 0.00498<br />
**C = -3.2606e-5<br />
<br />
===Si<sub>3</sub>N<sub>4</sub> deposition (IBD)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/d/d3/IBD_SiNdeposition.pdf Si<sub>3</sub>N<sub>4</sub> Standard Recipe]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDE4RldRQnA1N1ptOUlHQVc3QjNXSkE#gid=sharing Si<sub>3</sub>N<sub>4</sub> Data December 2014]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEdsbWRhYW9mbFRLem56TjFFWjRwR1E#gid=sharing Si<sub>3</sub>N<sub>4</sub> Thickness uniformity 2014]<br />
<br />
*Deposition Rate: ≈ 4.10 nm/min (users must calibrate this prior to critical deps)<br />
*HF e.r.~11nm/min<br />
*Stress ≈ -1590MPa (compressive)<br />
*Refractive Index: ≈ 1.969<br />
*[[http://en.wikipedia.org/wiki/Cauchy's_equation Cauchy Parameters]] (350-2000nm): <br />
**A = 2.000<br />
**B = 0.01974<br />
**C = 1.2478e-4<br />
<br />
===SiO<sub>x</sub>N<sub>y</sub> deposition (IBD)===<br />
These are some old (2010), initial characterizations only. A recipe improvement would be to increase the Assist O2+N2 = 60sccm total, increasing repeatability. Contact [[Demis D. John|Demis]] for more info.<br />
{|<br />
![[File:IBD SiON Index @ 623nm vs. O2 Gas Flow - v3 - wiki.jpg|alt=plot showing varying refractive index between Si3N4 and SiO2|none|thumb|250x250px|IBD SiO<sub>x</sub>N<sub>y</sub>: Refractive Index vs. O2/N2 Flow.]]<br />
![[File:IBD SiON - Dep rate vs O2 flow - wiki.png|alt=Rate varies monotonically from 53-5 Å/min.|none|thumb|Dep. Rate of IBD SiO<sub>x</sub>N<sub>y</sub> vs. Assist O<sub>2</sub> flow.]]<br />
|}<br />
<br />
===Ta{{sub|2}}O{{sub|5}} deposition (IBD)===<br />
<br />
==== Ta2O5 Historical Data (IBD) ====<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/85/IBD_Ta2O5_deposition_details.pdf Ta{{sub|2}}O{{sub|5}} Standard Recipe]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGhhUGdCR2JudkZJU3pBemR4bS1GWWc#gid=0=sharing Ta{{sub|2}}O{{sub|5}} Data December 2014]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dE5xbVFyUFZqdTdUN0JRSUNvMGFGb2c#gid=sharing Ta{{sub|2}}O{{sub|5}} Thickness uniformity 2014]<br />
<br />
*[https://docs.google.com/spreadsheets/d/1WRqzTTIX4D7Un-XqHqSB66JuSplrMiZAzGvjYFZ-Gtk/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Data December-15 min depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1BZrNtzHwWqfLhvZW4UY01CUfkObW70MxW9jdLhBcunc/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Thickness uniformity-15 min depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1saOA_9SwcPCkuW7uGgOSXhvtwrMkKJUxeS4wRE9qxQ8/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Data December-1hr depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1wXAtWbbE8dvvulJxJXkwQyejgcrz51t-HH4omTq0scs/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Thickness uniformity-1hr depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1A0bVnVgwPfj5JfAtmgNSeto2Rix8qOfiGO9mpXa433g/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Data December-1hr depositions 2016]<br />
*[https://docs.google.com/spreadsheets/d/1U7XUvluOpgD7tsciZ1pAFGiFsKJKvym6mH5hKaSt5b0/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Thickness uniformity-1hr depositions 2016]<br />
<br />
==== Ta2O5 Deposition/Film Properies (IBD) ====<br />
*Ta2O5 1hr depositions:<br />
*Deposition Rate: ≈ 7.8 nm/min (users must calibrate this prior to critical deps)<br />
*HF e.r.~2 nm/min<br />
*Stress ≈ -232MPa (compressive)<br />
*Refractive Index: ≈ 2.172<br />
*[[http://en.wikipedia.org/wiki/Cauchy's_equation Cauchy Parameters]] (350-2000nm): <br />
**A = 2.1123<br />
**B = 0.018901<br />
**C = -0.016222<br />
<br />
===TiO{{sub|2}} deposition (IBD)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/3/3b/New_IBD_TiO2_deposition.pdf TiO<sub>2</sub> Standard Recipe]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGVXVkM4dEdXaU15M09HNGhJbGUycVE#gid=sharing TiO<sub>2</sub> Data December 2014]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dF9YSW9jTDJzY19MbmVEbUQtVzJVdVE#gid=sharing TiO<sub>2</sub> Thickness uniformity 2014]<br />
<br />
*Deposition Rate: ≈ 1.29 nm/min (users must calibrate this prior to critical deps)<br />
*HF etch rate ~5.34nm/min<br />
*Stress ≈ -445MPa (compressive)<br />
*Refractive Index: ≈ 2.259<br />
*[[http://en.wikipedia.org/wiki/Cauchy's_equation Cauchy Parameters]] (350-2000nm): <br />
**A = 2.435<br />
**B = -4.9045e-4<br />
**C = 0.01309<br />
*Absorbing < ~350nm<br />
<br />
===Al<sub>2</sub>O<sub>3</sub> deposition (IBD)===<br />
<br />
*Al2O3 standard recipe: 1_Al2O3_dep<br />
<br />
*[https://docs.google.com/spreadsheets/d/1Qwxa7rtq2kGeFUQxnjGFgtdCJP4uIX_bdUcCWFvO72g/edit#gid= Al2O3 Data 2018]<br />
*[https://docs.google.com/spreadsheets/d/1rjwDQ0WJOIL7XWx2KWQ4fEPjNkr6GEmiXGmQXZnWFOI/edit#gid= Al2O3 Thickness uniformity 2018]<br />
<br />
*Deposition Rate: ≈ 2.05nm/min (users must calibrate this prior to critical deps)<br />
*HF etch rate ~167nm/min<br />
*Stress ≈ -332MPa (compressive)<br />
*Refractive Index: ≈ 1.656<br />
*[[http://en.wikipedia.org/wiki/Cauchy's_equation Cauchy Parameters]] (350-2000nm):( working on) <br />
**A =<br />
**B =<br />
**C =<br />
*Absorbing < ~350nm<br />
<br />
== Reference Recipes (Disabled Tools) ==<br />
<br />
=== [[Sputter 2 (SFI Endeavor)|<big><u>Sputter 2 (SFI Endeavor)</u></big>]] ===<br />
'''This Tool has been Disabled, and is not available for use any more! These recipes are displayed here for historical/reference purposes only.'''<br />
'''Al Deposition (Sputter 2)'''<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/0/05/20-Al-Sputtering-Film-Sputter-2.pdf Al Deposition Recipe]<br />
'''AlN<sub>x</sub> Deposition (Sputter 2)'''<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/8c/Sputter-2-AlN-Endeavor-rev1.pdf AlN<sub>x</sub> Deposition Recipe]<br />
'''Au Deposition (Sputter 2)'''<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/8a/21-Au-Sputter-film-recipes-Sputter-2.pdf Au Deposition Recipe]<br />
'''TiO<sub>2</sub> Deposition (Sputter 2)'''<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/c/c4/22-TiO2-Film-Sputter-2.pdf TiO2<sub>2</sub> Deposition Recipe]</div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=Vacuum_Deposition_Recipes&diff=159260
Vacuum Deposition Recipes
2021-09-27T18:34:20Z
<p>Ningcao: </p>
<hr />
<div>{{Recipe Table Explanation}}<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"<br />
|- bgcolor="#d0e7ff"<br />
! colspan="16" width="1675" height="45" |<div style="font-size: 150%;">Vacuum Deposition Recipes</div><br />
|- bgcolor="#d0e7ff"<br />
|<!-- INTENTIONALLY LEFT BLANK --><br><br />
! colspan="4" bgcolor="#d0e7ff" align="center" |'''[[E-Beam Evaporation Recipes|E-Beam Evaporation]]'''<br />
! colspan="4" |'''[[Sputtering Recipes|Sputtering]]'''<br />
! colspan="2" bgcolor="#d0e7ff" align="center" |'''[[Thermal Evaporation Recipes|Thermal Evaporation]]'''<br />
! colspan="3" bgcolor="#d0e7ff" align="center" |'''[[PECVD Recipes|Plasma Enhanced Chemical<br>Vapor Deposition (PECVD)]]'''<br />
! width="90" bgcolor="#d0e7ff" align="center" |'''[[Atomic Layer Deposition Recipes|Atomic Layer Deposition]]'''<br />
! width="80" bgcolor="#d0e7ff" align="center" |'''[[Molecular Vapor Deposition Recipes|Molecular Vapor Deposition]]'''<br />
|-<br />
! width="20" bgcolor="#d0e7ff" align="center" |'''Material'''<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_1_.28Sharon.29|E-Beam 1 (Sharon)]]<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_2_.28Custom.29|E-Beam 2 (Custom)]]<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_3_.28Temescal.29|E-Beam 3 (Temescal)]]<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_4_.28CHA.29|E-Beam 4 (CHA)]]<br />
| width="65" bgcolor="#daf1ff" |[[Sputtering_Recipes#Sputter_3_.28AJA_ATC_2000-F.29|Sputter 3<br>(AJA ATC 2000-F)]]<br />
| width="65" bgcolor="#daf1ff" |[[Sputtering_Recipes#Sputter_4_.28AJA_ATC_2200-V.29|Sputter 4<br>(AJA ATC 2200-V)]]<br />
| width="65" bgcolor="#daf1ff" |[https://wiki.nanotech.ucsb.edu/w/index.php?title=Sputtering_Recipes#Sputter_5_.28AJA_ATC_2200-V.29 Sputter 5 (AJA ATC 2200-V)]<br />
| width="55" bgcolor="#daf1ff" |[[Sputtering_Recipes#Ion_Beam_Deposition_.28Veeco_NEXUS.29|Ion Beam<br>Deposition (Veeco Nexus)]]<br />
| width="45" bgcolor="#daf1ff" |[[Thermal Evaporation Recipes#Thermal_Evap_1|Thermal<br>Evap 1]]<br />
| width="65" bgcolor="#daf1ff" |[[Thermal Evaporation Recipes#Thermal_Evap_2_.28Solder.29|Thermal Evap 2 (Solder)]]<br />
| width="65" bgcolor="#daf1ff" |[[PECVD Recipes#PECVD_1_.28PlasmaTherm_790.29|PECVD 1<br>(PlasmaTherm 790)]]<br />
| width="65" bgcolor="#daf1ff" |[[PECVD Recipes#PECVD_2_.28Advanced_Vacuum.29|PECVD 2<br>(Advanced Vacuum)]]<br />
| width="65" bgcolor="#daf1ff" |[[PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29|Unaxis VLR ICP-PECVD]]<br />
| width="65" bgcolor="#daf1ff" |[[Atomic_Layer_Deposition_Recipes|Atomic Layer Deposition (Oxford FlexAL)]]<br />
| width="65" bgcolor="#daf1ff" |[[Molecular Vapor Deposition|Molecular Vapor Deposition (Tool)]]<br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Ag<br />
| bgcolor="#eeffff" |{{Al/E1}}<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |{{Al/E3}}<br />
| bgcolor="#eeffff" |{{Al/E4}}<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|A]]<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|A]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Al<br />
|{{Al/E1}}<br />
|<br><br />
|{{Al/E3}}<br />
|{{Al/E4}}<br />
|[[Sputtering Recipes|A]]<br />
|{{rl|Sputtering Recipes|Al Deposition (Sputter 4)}}<br />
|<br><br />
|<br>[[Sputtering_Recipes#Ion_Beam_Deposition_.28Veeco_NEXUS.29|A]]<br />
|[[Thermal Evaporation Recipes|A]]<br />
|[[Thermal Evaporation Recipes|A]]<br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Al<sub>2</sub>O<sub>3</sub><br />
| bgcolor="#eeffff" |{{Al/E1}}<br />
| bgcolor="#eeffff" |{{Al/E2}}<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[Sputtering Recipes|A]]<br />
| bgcolor="#eeffff" |{{rl|Sputtering Recipes|Al2O3 Deposition (Sputter 4)}}<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[https://wiki.nanotech.ucsb.edu/w/index.php?title=Sputtering_Recipes#Al2O3_deposition_.28IBD.29 R]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |{{rl|Atomic Layer Deposition Recipes|Al2O3 deposition (ALD CHAMBER 3)}}<br />
| bgcolor="#eeffff" |<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |AlN<br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
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| bgcolor="#eeffff" |<br>[[Sputtering_Recipes#Ion_Beam_Deposition_.28Veeco_NEXUS.29|A]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
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|-<br />
! bgcolor="#d0e7ff" align="center" |TiN<br />
|<br><br />
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|<br><br />
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|<br><br />
|[https://wiki.nanotech.ucsb.edu/w/index.php?title=Sputtering_Recipes#Sputter_4_.28AJA_ATC_2200-V.29 R]<br />
|<br><br />
|[[Sputtering_Recipes#Ion_Beam_Deposition_.28Veeco_NEXUS.29|A]]<br />
|<br><br />
|<br><br />
|<br><br />
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|<br><br />
|{{rl|Atomic Layer Deposition Recipes|TiN deposition (ALD CHAMBER 3)}}<br />
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|-<br />
! bgcolor="#d0e7ff" align="center" |TiW<br />
| bgcolor="#eeffff" |{{Al/E1}}<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[Sputtering Recipes|A]]<br />
| bgcolor="#eeffff" |{{rl|Sputtering Recipes|W-TiW Deposition (Sputter 4)}}<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
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|-<br />
! bgcolor="#d0e7ff" align="center" |TiO<sub>2</sub><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |{{Al/E2}}<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[Sputtering Recipes|A]]<br />
| bgcolor="#eeffff" |{{rl|Sputtering Recipes|Sputter 4 (AJA ATC 2200-V)}}<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[Sputtering_Recipes#TiO2_deposition_.28IBD.29|R]]<br />
| bgcolor="#eeffff" |<br><br />
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| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |{{rl|Atomic Layer Deposition Recipes|TiO2 deposition (ALD CHAMBER 3)}}<br />
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|-<br />
! bgcolor="#d0e7ff" align="center" |V<br />
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| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[Sputtering Recipes|A]]<br />
| bgcolor="#eeffff" |{{rl|Sputtering Recipes|W deposition (Sputter 4)}}<br />
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! bgcolor="#d0e7ff" align="center" |Zn<br />
|<br><br />
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|[[Thermal Evaporation Recipes|A]]<br />
|[[Thermal Evaporation Recipes|A]]<br />
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! bgcolor="#d0e7ff" align="center" |ZnO<br />
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| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |{{rl|Atomic Layer Deposition Recipes|ZnO:Al deposition (ALD CHAMBER 1)}}<br />
| bgcolor="#eeffff" |<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Zr<br />
|{{Al/E1}}<br />
|<br><br />
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|{{Al/E4}}<br />
|[[Sputtering Recipes|A]]<br />
|[[Sputtering Recipes|A]]<br />
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! bgcolor="#d0e7ff" align="center" |ZrO<sub>2</sub><br />
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| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |{{rl|Atomic Layer Deposition Recipes|ZrO2 deposition (ALD CHAMBER 3)}}<br />
| bgcolor="#eeffff" |<br><br />
|-<br />
! width="20" bgcolor="#d0e7ff" align="center" |'''Material'''<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_1_.28Sharon.29|E-Beam 1 (Sharon)]]<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_2_.28Custom.29|E-Beam 2 (Custom)]]<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_3_.28Temescal.29|E-Beam 3 (Temescal)]]<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_4_.28CHA.29|E-Beam 4 (CHA)]]<br />
| width="65" bgcolor="#daf1ff" |[[Sputtering Recipes#Sputter_3_.28ATC_2000-F.29|Sputter 3<br>(ATC 2000-F)]]<br />
| width="65" bgcolor="#daf1ff" |[[Sputtering_Recipes#Sputter_4_.28AJA_ATC_2200-V.29|Sputter 4<br>(ATC 2200-V)]]<br />
| width="65" bgcolor="#daf1ff" |[[Sputtering Recipes|Sputter 5 (ATC 2200-V)]]<br />
| width="55" bgcolor="#daf1ff" |[[Sputtering_Recipes#Ion_Beam_Deposition_.28Veeco_NEXUS.29|Ion Beam<br>Deposition (Veeco Nexus)]]<br />
| width="45" bgcolor="#daf1ff" |[[Thermal Evaporation Recipes#Thermal_Evap_1|Thermal<br>Evap 1]]<br />
| width="65" bgcolor="#daf1ff" |[[Thermal Evaporation Recipes#Thermal_Evap_2_.28Solder.29|Thermal Evap 2 (Solder)]]<br />
| width="65" bgcolor="#daf1ff" |[[PECVD Recipes#PECVD_1_.28PlasmaTherm_790.29|PECVD 1<br>(PlasmaTherm 790)]]<br />
| width="65" bgcolor="#daf1ff" |[[PECVD Recipes#PECVD_2_.28Advanced_Vacuum.29|PECVD 2<br>(Advanced Vacuum)]]<br />
| width="65" bgcolor="#daf1ff" |[[PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29|Unaxis VLR ICP-PECVD]]<br />
| width="65" bgcolor="#daf1ff" |[[Atomic_Layer_Deposition_Recipes|Atomic Layer Deposition (Oxford FlexAl)]]<br />
| width="65" bgcolor="#daf1ff" |[[Molecular Vapor Deposition|Molecular Vapor Deposition (Tool)]]<br />
|}<br />
<br />
[[Category:Processing]]</div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=Vacuum_Deposition_Recipes&diff=159259
Vacuum Deposition Recipes
2021-09-27T18:32:42Z
<p>Ningcao: </p>
<hr />
<div>{{Recipe Table Explanation}}<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"<br />
|- bgcolor="#d0e7ff"<br />
! colspan="16" width="1675" height="45" |<div style="font-size: 150%;">Vacuum Deposition Recipes</div><br />
|- bgcolor="#d0e7ff"<br />
|<!-- INTENTIONALLY LEFT BLANK --><br><br />
! colspan="4" bgcolor="#d0e7ff" align="center" |'''[[E-Beam Evaporation Recipes|E-Beam Evaporation]]'''<br />
! colspan="4" |'''[[Sputtering Recipes|Sputtering]]'''<br />
! colspan="2" bgcolor="#d0e7ff" align="center" |'''[[Thermal Evaporation Recipes|Thermal Evaporation]]'''<br />
! colspan="3" bgcolor="#d0e7ff" align="center" |'''[[PECVD Recipes|Plasma Enhanced Chemical<br>Vapor Deposition (PECVD)]]'''<br />
! width="90" bgcolor="#d0e7ff" align="center" |'''[[Atomic Layer Deposition Recipes|Atomic Layer Deposition]]'''<br />
! width="80" bgcolor="#d0e7ff" align="center" |'''[[Molecular Vapor Deposition Recipes|Molecular Vapor Deposition]]'''<br />
|-<br />
! width="20" bgcolor="#d0e7ff" align="center" |'''Material'''<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_1_.28Sharon.29|E-Beam 1 (Sharon)]]<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_2_.28Custom.29|E-Beam 2 (Custom)]]<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_3_.28Temescal.29|E-Beam 3 (Temescal)]]<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_4_.28CHA.29|E-Beam 4 (CHA)]]<br />
| width="65" bgcolor="#daf1ff" |[[Sputtering_Recipes#Sputter_3_.28AJA_ATC_2000-F.29|Sputter 3<br>(AJA ATC 2000-F)]]<br />
| width="65" bgcolor="#daf1ff" |[[Sputtering_Recipes#Sputter_4_.28AJA_ATC_2200-V.29|Sputter 4<br>(AJA ATC 2200-V)]]<br />
| width="65" bgcolor="#daf1ff" |[https://wiki.nanotech.ucsb.edu/w/index.php?title=Sputtering_Recipes#Sputter_5_.28AJA_ATC_2200-V.29 Sputter 5 (AJA ATC 2200-V)]<br />
| width="55" bgcolor="#daf1ff" |[[Sputtering_Recipes#Ion_Beam_Deposition_.28Veeco_NEXUS.29|Ion Beam<br>Deposition (Veeco Nexus)]]<br />
| width="45" bgcolor="#daf1ff" |[[Thermal Evaporation Recipes#Thermal_Evap_1|Thermal<br>Evap 1]]<br />
| width="65" bgcolor="#daf1ff" |[[Thermal Evaporation Recipes#Thermal_Evap_2_.28Solder.29|Thermal Evap 2 (Solder)]]<br />
| width="65" bgcolor="#daf1ff" |[[PECVD Recipes#PECVD_1_.28PlasmaTherm_790.29|PECVD 1<br>(PlasmaTherm 790)]]<br />
| width="65" bgcolor="#daf1ff" |[[PECVD Recipes#PECVD_2_.28Advanced_Vacuum.29|PECVD 2<br>(Advanced Vacuum)]]<br />
| width="65" bgcolor="#daf1ff" |[[PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29|Unaxis VLR ICP-PECVD]]<br />
| width="65" bgcolor="#daf1ff" |[[Atomic_Layer_Deposition_Recipes|Atomic Layer Deposition (Oxford FlexAL)]]<br />
| width="65" bgcolor="#daf1ff" |[[Molecular Vapor Deposition|Molecular Vapor Deposition (Tool)]]<br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Ag<br />
| bgcolor="#eeffff" |{{Al/E1}}<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |{{Al/E3}}<br />
| bgcolor="#eeffff" |{{Al/E4}}<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|A]]<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|A]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Al<br />
|{{Al/E1}}<br />
|<br><br />
|{{Al/E3}}<br />
|{{Al/E4}}<br />
|[[Sputtering Recipes|A]]<br />
|{{rl|Sputtering Recipes|Al Deposition (Sputter 4)}}<br />
|<br><br />
|<br>[[Sputtering_Recipes#Ion_Beam_Deposition_.28Veeco_NEXUS.29|A]]<br />
|[[Thermal Evaporation Recipes|A]]<br />
|[[Thermal Evaporation Recipes|A]]<br />
|<br><br />
|<br><br />
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|<br><br />
|<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Al<sub>2</sub>O<sub>3</sub><br />
| bgcolor="#eeffff" |{{Al/E1}}<br />
| bgcolor="#eeffff" |{{Al/E2}}<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[Sputtering Recipes|A]]<br />
| bgcolor="#eeffff" |{{rl|Sputtering Recipes|Al2O3 Deposition (Sputter 4)}}<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[https://wiki.nanotech.ucsb.edu/w/index.php?title=Sputtering_Recipes#Al2O3_deposition_.28IBD.29 R]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |{{rl|Atomic Layer Deposition Recipes|Al2O3 deposition (ALD CHAMBER 3)}}<br />
| bgcolor="#eeffff" |<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |AlN<br />
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|[[Sputtering Recipes|A]]<br />
|[[Sputtering Recipes|A]]<br />
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|[[Sputtering_Recipes#Ion_Beam_Deposition_.28Veeco_NEXUS.29|A]]<br />
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|{{rl|Atomic Layer Deposition Recipes|AlN deposition (ALD CHAMBER 3)}}<br />
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! bgcolor="#d0e7ff" align="center" |Au<br />
| bgcolor="#eeffff" |{{Al/E1}}<br />
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| bgcolor="#eeffff" |{{Al/E3}}<br />
| bgcolor="#eeffff" |{{Al/E4}}<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|A]]<br />
| bgcolor="#eeffff" |{{rl|Sputtering Recipes|Ti-Au Deposition (Sputter 4)}}<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[Thermal Evaporation Recipes|A]]<br />
| bgcolor="#eeffff" |[[Thermal Evaporation Recipes|A]]<br />
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! bgcolor="#d0e7ff" align="center" |C<br />
| bgcolor="#eeffff" align="center" |{{rl|E-Beam Evaporation Recipes|Materials Table (E-Beam #1)}}<br />
| bgcolor="#eeffff" align="center" |<br />
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| bgcolor="#eeffff" align="center" |<br />
| bgcolor="#eeffff" align="center" |<br />
|-<br />
! bgcolor="#d0e7ff" align="center" |CeO<sub>2</sub><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |{{rl|E-Beam Evaporation Recipes|E-Beam 2 (Custom)|CeO<sub>2</sub> deposition (E-Beam 2)}}<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
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|-<br />
! bgcolor="#d0e7ff" align="center" |Co<br />
| bgcolor="#eeffff" |{{Al/E1}}<br />
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| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |{{Al/E4}}<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R]]<br />
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|-<br />
! bgcolor="#d0e7ff" align="center" |Cr<br />
|{{Al/E1}}<br />
|<br><br />
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|{{Al/E4}}<br />
|[https://wiki.nanotech.ucsb.edu/w/index.php?title=Sputtering_Recipes#Sputter_3_.28AJA_ATC_2000-F.29 R]<br />
|<br><br />
|<br><br />
|<br><br />
|[[Thermal Evaporation Recipes|A]]<br />
|[[Thermal Evaporation Recipes|A]]<br />
|<br><br />
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! bgcolor="#d0e7ff" align="center" |Cu<br />
| bgcolor="#eeffff" |{{Al/E1}}<br />
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| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |{{rl|Sputtering Recipes|Sputter 3 (AJA ATC 2000-F)}}<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|A]]<br />
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! bgcolor="#d0e7ff" align="center" |GeO<sub>2</sub><br />
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| bgcolor="#eeffff" |{{Al/E4}}<br />
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! bgcolor="#d0e7ff" align="center" |Hf<br />
| bgcolor="#eeffff" |{{Al/E1}}<br />
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! bgcolor="#d0e7ff" align="center" |HfO<sub>2</sub><br />
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! width="20" bgcolor="#d0e7ff" align="center" |'''Material'''<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_1_.28Sharon.29|E-Beam 1 (Sharon)]]<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_2_.28Custom.29|E-Beam 2 (Custom)]]<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_3_.28Temescal.29|E-Beam 3 (Temescal)]]<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_4_.28CHA.29|E-Beam 4 (CHA)]]<br />
| width="65" bgcolor="#daf1ff" |[[Sputtering Recipes#Sputter_3_.28ATC_2000-F.29|Sputter 3<br>(ATC 2000-F)]]<br />
| width="65" bgcolor="#daf1ff" |[[Sputtering_Recipes#Sputter_4_.28AJA_ATC_2200-V.29|Sputter 4<br>(ATC 2200-V)]]<br />
| width="65" bgcolor="#daf1ff" |[[Sputtering Recipes|Sputter 5 (ATC 2200-V)]]<br />
| width="55" bgcolor="#daf1ff" |[[Sputtering_Recipes#Ion_Beam_Deposition_.28Veeco_NEXUS.29|Ion Beam<br>Deposition (Veeco Nexus)]]<br />
| width="45" bgcolor="#daf1ff" |[[Thermal Evaporation Recipes#Thermal_Evap_1|Thermal<br>Evap 1]]<br />
| width="65" bgcolor="#daf1ff" |[[Thermal Evaporation Recipes#Thermal_Evap_2_.28Solder.29|Thermal Evap 2 (Solder)]]<br />
| width="65" bgcolor="#daf1ff" |[[PECVD Recipes#PECVD_1_.28PlasmaTherm_790.29|PECVD 1<br>(PlasmaTherm 790)]]<br />
| width="65" bgcolor="#daf1ff" |[[PECVD Recipes#PECVD_2_.28Advanced_Vacuum.29|PECVD 2<br>(Advanced Vacuum)]]<br />
| width="65" bgcolor="#daf1ff" |[[PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29|Unaxis VLR ICP-PECVD]]<br />
| width="65" bgcolor="#daf1ff" |[[Atomic_Layer_Deposition_Recipes|Atomic Layer Deposition (Oxford FlexAl)]]<br />
| width="65" bgcolor="#daf1ff" |[[Molecular Vapor Deposition|Molecular Vapor Deposition (Tool)]]<br />
|}<br />
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[[Category:Processing]]</div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=Vacuum_Deposition_Recipes&diff=159258
Vacuum Deposition Recipes
2021-09-27T18:31:47Z
<p>Ningcao: </p>
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<div>{{Recipe Table Explanation}}<br />
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! colspan="16" width="1675" height="45" |<div style="font-size: 150%;">Vacuum Deposition Recipes</div><br />
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|<!-- INTENTIONALLY LEFT BLANK --><br><br />
! colspan="4" bgcolor="#d0e7ff" align="center" |'''[[E-Beam Evaporation Recipes|E-Beam Evaporation]]'''<br />
! colspan="4" |'''[[Sputtering Recipes|Sputtering]]'''<br />
! colspan="2" bgcolor="#d0e7ff" align="center" |'''[[Thermal Evaporation Recipes|Thermal Evaporation]]'''<br />
! colspan="3" bgcolor="#d0e7ff" align="center" |'''[[PECVD Recipes|Plasma Enhanced Chemical<br>Vapor Deposition (PECVD)]]'''<br />
! width="90" bgcolor="#d0e7ff" align="center" |'''[[Atomic Layer Deposition Recipes|Atomic Layer Deposition]]'''<br />
! width="80" bgcolor="#d0e7ff" align="center" |'''[[Molecular Vapor Deposition Recipes|Molecular Vapor Deposition]]'''<br />
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! width="20" bgcolor="#d0e7ff" align="center" |'''Material'''<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_1_.28Sharon.29|E-Beam 1 (Sharon)]]<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_2_.28Custom.29|E-Beam 2 (Custom)]]<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_3_.28Temescal.29|E-Beam 3 (Temescal)]]<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_4_.28CHA.29|E-Beam 4 (CHA)]]<br />
| width="65" bgcolor="#daf1ff" |[[Sputtering_Recipes#Sputter_3_.28AJA_ATC_2000-F.29|Sputter 3<br>(AJA ATC 2000-F)]]<br />
| width="65" bgcolor="#daf1ff" |[[Sputtering_Recipes#Sputter_4_.28AJA_ATC_2200-V.29|Sputter 4<br>(AJA ATC 2200-V)]]<br />
| width="65" bgcolor="#daf1ff" |[https://wiki.nanotech.ucsb.edu/w/index.php?title=Sputtering_Recipes#Sputter_5_.28AJA_ATC_2200-V.29 Sputter 5 (AJA ATC 2200-V)]<br />
| width="55" bgcolor="#daf1ff" |[[Sputtering_Recipes#Ion_Beam_Deposition_.28Veeco_NEXUS.29|Ion Beam<br>Deposition (Veeco Nexus)]]<br />
| width="45" bgcolor="#daf1ff" |[[Thermal Evaporation Recipes#Thermal_Evap_1|Thermal<br>Evap 1]]<br />
| width="65" bgcolor="#daf1ff" |[[Thermal Evaporation Recipes#Thermal_Evap_2_.28Solder.29|Thermal Evap 2 (Solder)]]<br />
| width="65" bgcolor="#daf1ff" |[[PECVD Recipes#PECVD_1_.28PlasmaTherm_790.29|PECVD 1<br>(PlasmaTherm 790)]]<br />
| width="65" bgcolor="#daf1ff" |[[PECVD Recipes#PECVD_2_.28Advanced_Vacuum.29|PECVD 2<br>(Advanced Vacuum)]]<br />
| width="65" bgcolor="#daf1ff" |[[PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29|Unaxis VLR ICP-PECVD]]<br />
| width="65" bgcolor="#daf1ff" |[[Atomic_Layer_Deposition_Recipes|Atomic Layer Deposition (Oxford FlexAL)]]<br />
| width="65" bgcolor="#daf1ff" |[[Molecular Vapor Deposition|Molecular Vapor Deposition (Tool)]]<br />
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! bgcolor="#d0e7ff" align="center" |SiN<br />
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|{{rl|Sputtering Recipes|SiN deposition (Sputter 3)}}<br />
|[[Sputtering Recipes|A]]<br />
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|[[Sputtering_Recipes#Si3N4_deposition_.28IBD.29|R]]<br />
|<br><br />
|<br><br />
|{{rl|PECVD Recipes|SiN deposition (PECVD #1)}}<br />
|{{rl|PECVD Recipes|SiN deposition (PECVD #2)}}<br />
|{{rl|PECVD Recipes|SiN 250C deposition (Unaxis VLR)}}<br />
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! bgcolor="#d0e7ff" align="center" |SiN - Low Stress<br />
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|{{rl|PECVD Recipes|SiN LS 250C Deposition (Unaxis VLR)}}<br />
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! bgcolor="#d0e7ff" align="center" |SiO<sub>2</sub><br />
| bgcolor="#eeffff" |{{Al/E1}}<br />
| bgcolor="#eeffff" |{{Al/E2}}<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |{{rl|Sputtering Recipes|SiO2 deposition (Sputter 3)}}<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|A]]<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|A]]<br />
| bgcolor="#eeffff" |[[Sputtering_Recipes#SiO2_deposition_.28IBD.29|R]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |{{rl|PECVD Recipes|SiO2 deposition (PECVD #1)}}<br />
| bgcolor="#eeffff" |{{rl|PECVD Recipes|SiO2 deposition (PECVD #2)}}<br />
| bgcolor="#eeffff" |{{rl|PECVD Recipes|SiO2 LDR 250C Deposition (Unaxis VLR)}}<br />
| bgcolor="#eeffff" |{{rl|Atomic Layer Deposition Recipes|SiO2 deposition (ALD CHAMBER 3)}}<br />
| bgcolor="#eeffff" |<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |SiO<sub>x</sub>N<sub>y</sub><br />
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|[https://wiki.nanotech.ucsb.edu/w/index.php?title=Sputtering_Recipes#SiOxNy_deposition_.28IBD.29 R]<br />
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|[[PECVD_Recipes#PECVD_1_.28PlasmaTherm_790.29|R]]<br />
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! bgcolor="#d0e7ff" align="center" |Sn<br />
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| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
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| bgcolor="#eeffff" |[[Thermal Evaporation Recipes|A]]<br />
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| bgcolor="#eeffff" |<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |SrF<sub>2</sub><br />
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|{{Al/E2}}<br />
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| bgcolor="#eeffff" |{{Al/E1}}<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |{{rl|Sputtering Recipes|Ta deposition (Sputter 3)}}<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|A]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br>[[Sputtering_Recipes#Ion_Beam_Deposition_.28Veeco_NEXUS.29|A]]<br />
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! bgcolor="#d0e7ff" align="center" |Ta<sub>2</sub>O<sub>5</sub><br />
|<br><br />
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|{{Al/E2}}<br />
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|[[Sputtering_Recipes#Ta2O5_deposition_.28IBD.29|R]]<br />
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|-<br />
! bgcolor="#d0e7ff" align="center" |Ti<br />
| bgcolor="#eeffff" |{{Al/E1}}<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |{{Al/E3}}<br />
| bgcolor="#eeffff" |{{Al/E4}}<br />
| bgcolor="#eeffff" |{{rl|Sputtering Recipes|Sputter 3 (AJA ATC 2000-F)}}<br />
| bgcolor="#eeffff" |{{rl|Sputtering Recipes|Ti-Au Deposition (Sputter 4)}}<br />
| bgcolor="#eeffff" |{{rl|Sputtering Recipes|[[Sputter 5 (AJA ATC 2200-V)]]}}<br />
| bgcolor="#eeffff" |<br>[[Sputtering_Recipes#Ion_Beam_Deposition_.28Veeco_NEXUS.29|A]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
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|-<br />
! bgcolor="#d0e7ff" align="center" |TiN<br />
|<br><br />
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|<br><br />
|<br><br />
|[https://wiki.nanotech.ucsb.edu/w/index.php?title=Sputtering_Recipes#Sputter_4_.28AJA_ATC_2200-V.29 R]<br />
|<br><br />
|[[Sputtering_Recipes#Ion_Beam_Deposition_.28Veeco_NEXUS.29|A]]<br />
|<br><br />
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|<br><br />
|{{rl|Atomic Layer Deposition Recipes|TiN deposition (ALD CHAMBER 3)}}<br />
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|-<br />
! bgcolor="#d0e7ff" align="center" |TiW<br />
| bgcolor="#eeffff" |{{Al/E1}}<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[Sputtering Recipes|A]]<br />
| bgcolor="#eeffff" |{{rl|Sputtering Recipes|W-TiW Deposition (Sputter 4)}}<br />
| bgcolor="#eeffff" |<br><br />
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|-<br />
! bgcolor="#d0e7ff" align="center" |TiO<sub>2</sub><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |{{Al/E2}}<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[Sputtering Recipes|A]]<br />
| bgcolor="#eeffff" |{{rl|Sputtering Recipes|Sputter 4 (AJA ATC 2200-V)}}<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[Sputtering_Recipes#TiO2_deposition_.28IBD.29|R]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |{{rl|Atomic Layer Deposition Recipes|TiO2 deposition (ALD CHAMBER 3)}}<br />
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|-<br />
! bgcolor="#d0e7ff" align="center" |V<br />
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|[[Sputtering Recipes|A]]<br />
|[[Sputtering Recipes|A]]<br />
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! bgcolor="#d0e7ff" align="center" |W<br />
| bgcolor="#eeffff" |{{Al/E1}}<br />
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| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[Sputtering Recipes|A]]<br />
| bgcolor="#eeffff" |{{rl|Sputtering Recipes|W deposition (Sputter 4)}}<br />
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|-<br />
! bgcolor="#d0e7ff" align="center" |Zn<br />
|<br><br />
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|[[Thermal Evaporation Recipes|A]]<br />
|[[Thermal Evaporation Recipes|A]]<br />
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|-<br />
! bgcolor="#d0e7ff" align="center" |ZnO<br />
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| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |{{rl|Atomic Layer Deposition Recipes|ZnO:Al deposition (ALD CHAMBER 1)}}<br />
| bgcolor="#eeffff" |<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Zr<br />
|{{Al/E1}}<br />
|<br><br />
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|{{Al/E4}}<br />
|[[Sputtering Recipes|A]]<br />
|[[Sputtering Recipes|A]]<br />
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! bgcolor="#d0e7ff" align="center" |ZrO<sub>2</sub><br />
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| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |{{rl|Atomic Layer Deposition Recipes|ZrO2 deposition (ALD CHAMBER 3)}}<br />
| bgcolor="#eeffff" |<br><br />
|-<br />
! width="20" bgcolor="#d0e7ff" align="center" |'''Material'''<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_1_.28Sharon.29|E-Beam 1 (Sharon)]]<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_2_.28Custom.29|E-Beam 2 (Custom)]]<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_3_.28Temescal.29|E-Beam 3 (Temescal)]]<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_4_.28CHA.29|E-Beam 4 (CHA)]]<br />
| width="65" bgcolor="#daf1ff" |[[Sputtering Recipes#Sputter_3_.28ATC_2000-F.29|Sputter 3<br>(ATC 2000-F)]]<br />
| width="65" bgcolor="#daf1ff" |[[Sputtering_Recipes#Sputter_4_.28AJA_ATC_2200-V.29|Sputter 4<br>(ATC 2200-V)]]<br />
| width="65" bgcolor="#daf1ff" |[[Sputtering Recipes|Sputter 5 (ATC 2200-V)]]<br />
| width="55" bgcolor="#daf1ff" |[[Sputtering_Recipes#Ion_Beam_Deposition_.28Veeco_NEXUS.29|Ion Beam<br>Deposition (Veeco Nexus)]]<br />
| width="45" bgcolor="#daf1ff" |[[Thermal Evaporation Recipes#Thermal_Evap_1|Thermal<br>Evap 1]]<br />
| width="65" bgcolor="#daf1ff" |[[Thermal Evaporation Recipes#Thermal_Evap_2_.28Solder.29|Thermal Evap 2 (Solder)]]<br />
| width="65" bgcolor="#daf1ff" |[[PECVD Recipes#PECVD_1_.28PlasmaTherm_790.29|PECVD 1<br>(PlasmaTherm 790)]]<br />
| width="65" bgcolor="#daf1ff" |[[PECVD Recipes#PECVD_2_.28Advanced_Vacuum.29|PECVD 2<br>(Advanced Vacuum)]]<br />
| width="65" bgcolor="#daf1ff" |[[PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29|Unaxis VLR ICP-PECVD]]<br />
| width="65" bgcolor="#daf1ff" |[[Atomic_Layer_Deposition_Recipes|Atomic Layer Deposition (Oxford FlexAl)]]<br />
| width="65" bgcolor="#daf1ff" |[[Molecular Vapor Deposition|Molecular Vapor Deposition (Tool)]]<br />
|}<br />
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[[Category:Processing]]</div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=Vacuum_Deposition_Recipes&diff=159257
Vacuum Deposition Recipes
2021-09-27T18:29:20Z
<p>Ningcao: </p>
<hr />
<div>{{Recipe Table Explanation}}<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"<br />
|- bgcolor="#d0e7ff"<br />
! colspan="16" width="1675" height="45" |<div style="font-size: 150%;">Vacuum Deposition Recipes</div><br />
|- bgcolor="#d0e7ff"<br />
|<!-- INTENTIONALLY LEFT BLANK --><br><br />
! colspan="4" bgcolor="#d0e7ff" align="center" |'''[[E-Beam Evaporation Recipes|E-Beam Evaporation]]'''<br />
! colspan="4" |'''[[Sputtering Recipes|Sputtering]]'''<br />
! colspan="2" bgcolor="#d0e7ff" align="center" |'''[[Thermal Evaporation Recipes|Thermal Evaporation]]'''<br />
! colspan="3" bgcolor="#d0e7ff" align="center" |'''[[PECVD Recipes|Plasma Enhanced Chemical<br>Vapor Deposition (PECVD)]]'''<br />
! width="90" bgcolor="#d0e7ff" align="center" |'''[[Atomic Layer Deposition Recipes|Atomic Layer Deposition]]'''<br />
! width="80" bgcolor="#d0e7ff" align="center" |'''[[Molecular Vapor Deposition Recipes|Molecular Vapor Deposition]]'''<br />
|-<br />
! width="20" bgcolor="#d0e7ff" align="center" |'''Material'''<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_1_.28Sharon.29|E-Beam 1 (Sharon)]]<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_2_.28Custom.29|E-Beam 2 (Custom)]]<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_3_.28Temescal.29|E-Beam 3 (Temescal)]]<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_4_.28CHA.29|E-Beam 4 (CHA)]]<br />
| width="65" bgcolor="#daf1ff" |[[Sputtering_Recipes#Sputter_3_.28AJA_ATC_2000-F.29|Sputter 3<br>(AJA ATC 2000-F)]]<br />
| width="65" bgcolor="#daf1ff" |[[Sputtering_Recipes#Sputter_4_.28AJA_ATC_2200-V.29|Sputter 4<br>(AJA ATC 2200-V)]]<br />
| width="65" bgcolor="#daf1ff" |[https://wiki.nanotech.ucsb.edu/w/index.php?title=Sputtering_Recipes#Sputter_5_.28AJA_ATC_2200-V.29 Sputter 5 (AJA ATC 2200-V)]<br />
| width="55" bgcolor="#daf1ff" |[[Sputtering_Recipes#Ion_Beam_Deposition_.28Veeco_NEXUS.29|Ion Beam<br>Deposition (Veeco Nexus)]]<br />
| width="45" bgcolor="#daf1ff" |[[Thermal Evaporation Recipes#Thermal_Evap_1|Thermal<br>Evap 1]]<br />
| width="65" bgcolor="#daf1ff" |[[Thermal Evaporation Recipes#Thermal_Evap_2_.28Solder.29|Thermal Evap 2 (Solder)]]<br />
| width="65" bgcolor="#daf1ff" |[[PECVD Recipes#PECVD_1_.28PlasmaTherm_790.29|PECVD 1<br>(PlasmaTherm 790)]]<br />
| width="65" bgcolor="#daf1ff" |[[PECVD Recipes#PECVD_2_.28Advanced_Vacuum.29|PECVD 2<br>(Advanced Vacuum)]]<br />
| width="65" bgcolor="#daf1ff" |[[PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29|Unaxis VLR ICP-PECVD]]<br />
| width="65" bgcolor="#daf1ff" |[[Atomic_Layer_Deposition_Recipes|Atomic Layer Deposition (Oxford FlexAL)]]<br />
| width="65" bgcolor="#daf1ff" |[[Molecular Vapor Deposition|Molecular Vapor Deposition (Tool)]]<br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Ag<br />
| bgcolor="#eeffff" |{{Al/E1}}<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |{{Al/E3}}<br />
| bgcolor="#eeffff" |{{Al/E4}}<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|A]]<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|A]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Al<br />
|{{Al/E1}}<br />
|<br><br />
|{{Al/E3}}<br />
|{{Al/E4}}<br />
|[[Sputtering Recipes|A]]<br />
|{{rl|Sputtering Recipes|Al Deposition (Sputter 4)}}<br />
|<br><br />
|<br>[[Sputtering_Recipes#Ion_Beam_Deposition_.28Veeco_NEXUS.29|A]]<br />
|[[Thermal Evaporation Recipes|A]]<br />
|[[Thermal Evaporation Recipes|A]]<br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Al<sub>2</sub>O<sub>3</sub><br />
| bgcolor="#eeffff" |{{Al/E1}}<br />
| bgcolor="#eeffff" |{{Al/E2}}<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[Sputtering Recipes|A]]<br />
| bgcolor="#eeffff" |{{rl|Sputtering Recipes|Al2O3 Deposition (Sputter 4)}}<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[https://wiki.nanotech.ucsb.edu/w/index.php?title=Sputtering_Recipes#Al2O3_deposition_.28IBD.29 R]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |{{rl|Atomic Layer Deposition Recipes|Al2O3 deposition (ALD CHAMBER 3)}}<br />
| bgcolor="#eeffff" |<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |AlN<br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|[[Sputtering Recipes|A]]<br />
|[[Sputtering Recipes|A]]<br />
|<br><br />
|[[Sputtering_Recipes#Ion_Beam_Deposition_.28Veeco_NEXUS.29|A]]<br />
|<br><br />
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|<br><br />
|{{rl|Atomic Layer Deposition Recipes|AlN deposition (ALD CHAMBER 3)}}<br />
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! bgcolor="#d0e7ff" align="center" |Au<br />
| bgcolor="#eeffff" |{{Al/E1}}<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |{{Al/E3}}<br />
| bgcolor="#eeffff" |{{Al/E4}}<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|A]]<br />
| bgcolor="#eeffff" |{{rl|Sputtering Recipes|Ti-Au Deposition (Sputter 4)}}<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[Thermal Evaporation Recipes|A]]<br />
| bgcolor="#eeffff" |[[Thermal Evaporation Recipes|A]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |B<br />
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|-<br />
! bgcolor="#d0e7ff" align="center" |C<br />
| bgcolor="#eeffff" align="center" |{{rl|E-Beam Evaporation Recipes|Materials Table (E-Beam #1)}}<br />
| bgcolor="#eeffff" align="center" |<br />
| bgcolor="#eeffff" align="center" |<br />
| bgcolor="#eeffff" align="center" |<br />
| bgcolor="#eeffff" align="center" |<br />
| bgcolor="#eeffff" align="center" |<br />
| bgcolor="#eeffff" align="center" |<br />
| bgcolor="#eeffff" align="center" |<br />
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| bgcolor="#eeffff" align="center" |<br />
| bgcolor="#eeffff" align="center" |<br />
| bgcolor="#eeffff" align="center" |<br />
| bgcolor="#eeffff" align="center" |<br />
| bgcolor="#eeffff" align="center" |<br />
| bgcolor="#eeffff" align="center" |<br />
|-<br />
! bgcolor="#d0e7ff" align="center" |CeO<sub>2</sub><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |{{rl|E-Beam Evaporation Recipes|E-Beam 2 (Custom)|CeO<sub>2</sub> deposition (E-Beam 2)}}<br />
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|[https://wiki.nanotech.ucsb.edu/w/index.php?title=Sputtering_Recipes#Sputter_3_.28AJA_ATC_2000-F.29 R]<br />
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| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[Sputtering Recipes|A]]<br />
| bgcolor="#eeffff" |{{rl|Sputtering Recipes|W deposition (Sputter 4)}}<br />
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| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |{{rl|Atomic Layer Deposition Recipes|ZnO:Al deposition (ALD CHAMBER 1)}}<br />
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|-<br />
! bgcolor="#d0e7ff" align="center" |Zr<br />
|{{Al/E1}}<br />
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| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |{{rl|Atomic Layer Deposition Recipes|ZrO2 deposition (ALD CHAMBER 3)}}<br />
| bgcolor="#eeffff" |<br><br />
|-<br />
! width="20" bgcolor="#d0e7ff" align="center" |'''Material'''<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_1_.28Sharon.29|E-Beam 1 (Sharon)]]<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_2_.28Custom.29|E-Beam 2 (Custom)]]<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_3_.28Temescal.29|E-Beam 3 (Temescal)]]<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_4_.28CHA.29|E-Beam 4 (CHA)]]<br />
| width="65" bgcolor="#daf1ff" |[[Sputtering Recipes#Sputter_3_.28ATC_2000-F.29|Sputter 3<br>(ATC 2000-F)]]<br />
| width="65" bgcolor="#daf1ff" |[[Sputtering_Recipes#Sputter_4_.28AJA_ATC_2200-V.29|Sputter 4<br>(ATC 2200-V)]]<br />
| width="65" bgcolor="#daf1ff" |[[Sputtering Recipes|Sputter 5 (ATC 2200-V)]]<br />
| width="55" bgcolor="#daf1ff" |[[Sputtering_Recipes#Ion_Beam_Deposition_.28Veeco_NEXUS.29|Ion Beam<br>Deposition (Veeco Nexus)]]<br />
| width="45" bgcolor="#daf1ff" |[[Thermal Evaporation Recipes#Thermal_Evap_1|Thermal<br>Evap 1]]<br />
| width="65" bgcolor="#daf1ff" |[[Thermal Evaporation Recipes#Thermal_Evap_2_.28Solder.29|Thermal Evap 2 (Solder)]]<br />
| width="65" bgcolor="#daf1ff" |[[PECVD Recipes#PECVD_1_.28PlasmaTherm_790.29|PECVD 1<br>(PlasmaTherm 790)]]<br />
| width="65" bgcolor="#daf1ff" |[[PECVD Recipes#PECVD_2_.28Advanced_Vacuum.29|PECVD 2<br>(Advanced Vacuum)]]<br />
| width="65" bgcolor="#daf1ff" |[[PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29|Unaxis VLR ICP-PECVD]]<br />
| width="65" bgcolor="#daf1ff" |[[Atomic_Layer_Deposition_Recipes|Atomic Layer Deposition (Oxford FlexAl)]]<br />
| width="65" bgcolor="#daf1ff" |[[Molecular Vapor Deposition|Molecular Vapor Deposition (Tool)]]<br />
|}<br />
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[[Category:Processing]]</div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=Vacuum_Deposition_Recipes&diff=159256
Vacuum Deposition Recipes
2021-09-27T18:26:17Z
<p>Ningcao: </p>
<hr />
<div>{{Recipe Table Explanation}}<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"<br />
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! colspan="16" width="1675" height="45" |<div style="font-size: 150%;">Vacuum Deposition Recipes</div><br />
|- bgcolor="#d0e7ff"<br />
|<!-- INTENTIONALLY LEFT BLANK --><br><br />
! colspan="4" bgcolor="#d0e7ff" align="center" |'''[[E-Beam Evaporation Recipes|E-Beam Evaporation]]'''<br />
! colspan="4" |'''[[Sputtering Recipes|Sputtering]]'''<br />
! colspan="2" bgcolor="#d0e7ff" align="center" |'''[[Thermal Evaporation Recipes|Thermal Evaporation]]'''<br />
! colspan="3" bgcolor="#d0e7ff" align="center" |'''[[PECVD Recipes|Plasma Enhanced Chemical<br>Vapor Deposition (PECVD)]]'''<br />
! width="90" bgcolor="#d0e7ff" align="center" |'''[[Atomic Layer Deposition Recipes|Atomic Layer Deposition]]'''<br />
! width="80" bgcolor="#d0e7ff" align="center" |'''[[Molecular Vapor Deposition Recipes|Molecular Vapor Deposition]]'''<br />
|-<br />
! width="20" bgcolor="#d0e7ff" align="center" |'''Material'''<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_1_.28Sharon.29|E-Beam 1 (Sharon)]]<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_2_.28Custom.29|E-Beam 2 (Custom)]]<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_3_.28Temescal.29|E-Beam 3 (Temescal)]]<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_4_.28CHA.29|E-Beam 4 (CHA)]]<br />
| width="65" bgcolor="#daf1ff" |[[Sputtering_Recipes#Sputter_3_.28AJA_ATC_2000-F.29|Sputter 3<br>(AJA ATC 2000-F)]]<br />
| width="65" bgcolor="#daf1ff" |[[Sputtering_Recipes#Sputter_4_.28AJA_ATC_2200-V.29|Sputter 4<br>(AJA ATC 2200-V)]]<br />
| width="65" bgcolor="#daf1ff" |[https://wiki.nanotech.ucsb.edu/w/index.php?title=Sputtering_Recipes#Sputter_5_.28AJA_ATC_2200-V.29 Sputter 5 (AJA ATC 2200-V)]<br />
| width="55" bgcolor="#daf1ff" |[[Sputtering_Recipes#Ion_Beam_Deposition_.28Veeco_NEXUS.29|Ion Beam<br>Deposition (Veeco Nexus)]]<br />
| width="45" bgcolor="#daf1ff" |[[Thermal Evaporation Recipes#Thermal_Evap_1|Thermal<br>Evap 1]]<br />
| width="65" bgcolor="#daf1ff" |[[Thermal Evaporation Recipes#Thermal_Evap_2_.28Solder.29|Thermal Evap 2 (Solder)]]<br />
| width="65" bgcolor="#daf1ff" |[[PECVD Recipes#PECVD_1_.28PlasmaTherm_790.29|PECVD 1<br>(PlasmaTherm 790)]]<br />
| width="65" bgcolor="#daf1ff" |[[PECVD Recipes#PECVD_2_.28Advanced_Vacuum.29|PECVD 2<br>(Advanced Vacuum)]]<br />
| width="65" bgcolor="#daf1ff" |[[PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29|Unaxis VLR ICP-PECVD]]<br />
| width="65" bgcolor="#daf1ff" |[[Atomic_Layer_Deposition_Recipes|Atomic Layer Deposition (Oxford FlexAL)]]<br />
| width="65" bgcolor="#daf1ff" |[[Molecular Vapor Deposition|Molecular Vapor Deposition (Tool)]]<br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Ag<br />
| bgcolor="#eeffff" |{{Al/E1}}<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |{{Al/E3}}<br />
| bgcolor="#eeffff" |{{Al/E4}}<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|A]]<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|A]]<br />
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| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
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|-<br />
! bgcolor="#d0e7ff" align="center" |Al<br />
|{{Al/E1}}<br />
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|{{Al/E3}}<br />
|{{Al/E4}}<br />
|[[Sputtering Recipes|A]]<br />
|{{rl|Sputtering Recipes|Al Deposition (Sputter 4)}}<br />
|<br><br />
|<br>[[Sputtering_Recipes#Ion_Beam_Deposition_.28Veeco_NEXUS.29|A]]<br />
|[[Thermal Evaporation Recipes|A]]<br />
|[[Thermal Evaporation Recipes|A]]<br />
|<br><br />
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! bgcolor="#d0e7ff" align="center" |Al<sub>2</sub>O<sub>3</sub><br />
| bgcolor="#eeffff" |{{Al/E1}}<br />
| bgcolor="#eeffff" |{{Al/E2}}<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[Sputtering Recipes|A]]<br />
| bgcolor="#eeffff" |{{rl|Sputtering Recipes|Al2O3 Deposition (Sputter 4)}}<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[https://wiki.nanotech.ucsb.edu/w/index.php?title=Sputtering_Recipes#Al2O3_deposition_.28IBD.29 R]<br />
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| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |{{rl|Atomic Layer Deposition Recipes|Al2O3 deposition (ALD CHAMBER 3)}}<br />
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|-<br />
! bgcolor="#d0e7ff" align="center" |AlN<br />
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| bgcolor="#eeffff" |[[Thermal Evaporation Recipes|A]]<br />
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| bgcolor="#eeffff" align="center" |{{rl|E-Beam Evaporation Recipes|Materials Table (E-Beam #1)}}<br />
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|-<br />
! bgcolor="#d0e7ff" align="center" |CeO<sub>2</sub><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |{{rl|E-Beam Evaporation Recipes|E-Beam 2 (Custom)|CeO<sub>2</sub> deposition (E-Beam 2)}}<br />
| bgcolor="#eeffff" |<br><br />
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! bgcolor="#d0e7ff" align="center" |Co<br />
| bgcolor="#eeffff" |{{Al/E1}}<br />
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| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |{{Al/E4}}<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R]]<br />
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! bgcolor="#d0e7ff" align="center" |Cr<br />
|{{Al/E1}}<br />
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|{{Al/E4}}<br />
|[https://wiki.nanotech.ucsb.edu/w/index.php?title=Sputtering_Recipes#Sputter_3_.28AJA_ATC_2000-F.29 R]<br />
|<br><br />
|<br><br />
|<br><br />
|[[Thermal Evaporation Recipes|A]]<br />
|[[Thermal Evaporation Recipes|A]]<br />
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! bgcolor="#d0e7ff" align="center" |Cu<br />
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| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |{{rl|Sputtering Recipes|Sputter 3 (AJA ATC 2000-F)}}<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|A]]<br />
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! bgcolor="#d0e7ff" align="center" |GeO<sub>2</sub><br />
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| bgcolor="#eeffff" |{{Al/E4}}<br />
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! bgcolor="#d0e7ff" align="center" |Hf<br />
| bgcolor="#eeffff" |{{Al/E1}}<br />
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|-<br />
! bgcolor="#d0e7ff" align="center" |HfO<sub>2</sub><br />
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|{{rl|Atomic Layer Deposition Recipes|HfO2 deposition (ALD CHAMBER 3)}}<br />
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! bgcolor="#d0e7ff" align="center" |In<br />
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| bgcolor="#eeffff" |[[Thermal Evaporation Recipes|A]]<br />
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! bgcolor="#d0e7ff" align="center" |ITO<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |{{rl|E-Beam Evaporation Recipes|E-Beam 2 (Custom)|ITO deposition (E-Beam 2)}}<br />
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| bgcolor="#eeffff" |[[Sputtering Recipes|A]]<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|A]]<br />
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| bgcolor="#eeffff" |[[Sputtering_Recipes#Ion_Beam_Deposition_.28Veeco_NEXUS.29|A]]<br />
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! bgcolor="#d0e7ff" align="center" |MgF2<br />
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| bgcolor="#eeffff" |[[Sputtering Recipes|A]]<br />
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| bgcolor="#eeffff" |<br>[[Sputtering_Recipes#Ion_Beam_Deposition_.28Veeco_NEXUS.29|A]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[https://wiki.nanotech.ucsb.edu/w/index.php?title=PECVD_Recipes#Amorphous-Si_deposition_.28PECVD_.232.29 R]<br />
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! bgcolor="#d0e7ff" align="center" |SiN<br />
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|{{rl|PECVD Recipes|SiN deposition (PECVD #1)}}<br />
|{{rl|PECVD Recipes|SiN deposition (PECVD #2)}}<br />
|{{rl|PECVD Recipes|SiN 250C deposition (Unaxis VLR)}}<br />
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| bgcolor="#eeffff" |{{rl|PECVD Recipes|SiO2 LDR 250C Deposition (Unaxis VLR)}}<br />
| bgcolor="#eeffff" |{{rl|Atomic Layer Deposition Recipes|SiO2 deposition (ALD CHAMBER 3)}}<br />
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| bgcolor="#eeffff" |{{rl|Sputtering Recipes|(Sputter 5)}}<br />
| bgcolor="#eeffff" |<br>[[Sputtering_Recipes#Ion_Beam_Deposition_.28Veeco_NEXUS.29|A]]<br />
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! bgcolor="#d0e7ff" align="center" |TiN<br />
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|[https://wiki.nanotech.ucsb.edu/w/index.php?title=Sputtering_Recipes#Sputter_4_.28AJA_ATC_2200-V.29 R]<br />
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|[[Sputtering_Recipes#Ion_Beam_Deposition_.28Veeco_NEXUS.29|A]]<br />
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| bgcolor="#eeffff" |{{rl|Atomic Layer Deposition Recipes|ZnO:Al deposition (ALD CHAMBER 1)}}<br />
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! bgcolor="#d0e7ff" align="center" |Zr<br />
|{{Al/E1}}<br />
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|-<br />
! width="20" bgcolor="#d0e7ff" align="center" |'''Material'''<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_1_.28Sharon.29|E-Beam 1 (Sharon)]]<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_2_.28Custom.29|E-Beam 2 (Custom)]]<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_3_.28Temescal.29|E-Beam 3 (Temescal)]]<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_4_.28CHA.29|E-Beam 4 (CHA)]]<br />
| width="65" bgcolor="#daf1ff" |[[Sputtering Recipes#Sputter_3_.28ATC_2000-F.29|Sputter 3<br>(ATC 2000-F)]]<br />
| width="65" bgcolor="#daf1ff" |[[Sputtering_Recipes#Sputter_4_.28AJA_ATC_2200-V.29|Sputter 4<br>(ATC 2200-V)]]<br />
| width="65" bgcolor="#daf1ff" |[[Sputtering Recipes|Sputter 5 (ATC 2200-V)]]<br />
| width="55" bgcolor="#daf1ff" |[[Sputtering_Recipes#Ion_Beam_Deposition_.28Veeco_NEXUS.29|Ion Beam<br>Deposition (Veeco Nexus)]]<br />
| width="45" bgcolor="#daf1ff" |[[Thermal Evaporation Recipes#Thermal_Evap_1|Thermal<br>Evap 1]]<br />
| width="65" bgcolor="#daf1ff" |[[Thermal Evaporation Recipes#Thermal_Evap_2_.28Solder.29|Thermal Evap 2 (Solder)]]<br />
| width="65" bgcolor="#daf1ff" |[[PECVD Recipes#PECVD_1_.28PlasmaTherm_790.29|PECVD 1<br>(PlasmaTherm 790)]]<br />
| width="65" bgcolor="#daf1ff" |[[PECVD Recipes#PECVD_2_.28Advanced_Vacuum.29|PECVD 2<br>(Advanced Vacuum)]]<br />
| width="65" bgcolor="#daf1ff" |[[PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29|Unaxis VLR ICP-PECVD]]<br />
| width="65" bgcolor="#daf1ff" |[[Atomic_Layer_Deposition_Recipes|Atomic Layer Deposition (Oxford FlexAl)]]<br />
| width="65" bgcolor="#daf1ff" |[[Molecular Vapor Deposition|Molecular Vapor Deposition (Tool)]]<br />
|}<br />
<br />
[[Category:Processing]]</div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=Sputtering_Recipes&diff=159255
Sputtering Recipes
2021-09-27T18:21:58Z
<p>Ningcao: /* Materials Table (Sputter 5) */</p>
<hr />
<div>{{recipes|Vacuum Deposition}}<br />
{{rl|Atomic Layer Deposition Recipes|Pt deposition (ALD)}}<br />
<br />
==[[Sputter 3 (AJA ATC 2000-F)]]==<br />
<br />
Please see the [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=20 SignupMonkey Page] for a list of currently installed targets.<br />
<br />
=== Materials Table (Sputter 3) ===<br />
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.<br />
{| class="wikitable sortable"<br />
|-<br />
!Material!!P(mT)!!Pow(W)!!Sub(W)!!T(C)!!Ar!!N2!!O2!!Height-Tilt!!Rate(nm/min)!!Stress(MPa)!!Rs(uOhm-cm)!!n@633nm!!k@633nm<br />
!Target Consumed Lower Limit!!Data Below!!Comment<br />
|-<br />
|Au<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
|Set: 200 W<br />
Read: 400 VDC<br />
|no<br />
|<br />
|-<br />
|Al2O3<br />
|3<br />
|200 (RF2)<br />
|off<br />
|20<br />
|30<br />
|<br />
|1.5<br />
|1.52"-4mm<br />
|5.32<br />
|<br />
|<br />
|1.6478<br />
|0<br />
|<br />
|no<br />
|Demis D. John<br />
|-<br />
|Co||10(5)||200||0||20||25||0||0||25-9||2.3||-||-||-||-<br />
| ||yes||Alex K<br />
|-<br />
|Cr||5||200||0||20||25||0||0||44-4||6.84||-||-||-||-<br />
| ||no||Brian<br />
|-<br />
|Cu||1.5||50(395v)||0||20||25||0||0||25-9||4.15||-||-||-||-<br />
| ||no||Ning<br />
|-<br />
|Cu||5||150(~490v)||0||20||15||0||0||0.82"-9||8||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Fe||10(5)||200||0||20||25||0||0||25-9||1.25||-||-||-||-<br />
| ||No||Alex K<br />
|-<br />
|Mo||3||200||0||20||25||0||0||44-4||13.15||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ni||5||150||0||20||25||0||0||44-4||5.23||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ni||5||150||0||20||25||0||0||25-9||1.82||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ni||5||75||0||20||25||0||0||44-4||2.50||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ni||3||200||0||20||25||0||0||44-4||9.4||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ni||1.5||50(399v)||0||20||25||0||0||25-9||0.96||-||-||-||-<br />
| ||no||Ning<br />
|-<br />
|Pt||3||50||0||20||25||0||0||0.82"-9||2.9||-||-||-||-<br />
| ||no||Ning<br />
|-<br />
|Si||8||250||0||25||25||0||0||15-3||1.4||-||-||-||-<br />
| ||no||Gerhard - ramp 2W/s - 3% Unif 4" wafer<br />
|-<br />
|SiN||3||200||10||20||25||3||0||25-9||1.56||-||-||1.992||-<br />
| ||yes||Brian<br />
|-<br />
|SiN||3||250||10||20||25||2.5||0||25-9||2.1||-||-||2.06||-<br />
| ||yes||Brian<br />
|-<br />
|SiO2||3||200||10||20||25||0||3||25-9||3.68||-||-||1.447||-<br />
| ||yes||Brian<br />
|-<br />
|SiO2||3||200||10||20||25||0||5||45-3||2.60||-||-||1.471||-<br />
| ||yes||Brian<br />
|-<br />
|SiO2||3||250||10||20||25||0||2.5||25-9||4.3||-||-||1.485||-<br />
| ||yes||Brian<br />
|-<br />
|Ta||5||150||0||20||25||0||0||44-4||9.47||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ta||5||75||0||20||25||0||0||44-4||5.03||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ti||3||100||0||20||25||0||0||25-9||1.34||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|SampleClean-NativeSiO2||10||0||18||20||25||0||0||44-4||-||-||-||-||-<br />
| ||yes||150Volts 5 min<br />
|-<br />
|}<br />
<br />
===Height Conversion for Older Recipes===<br />
Old recipes using the manual Height setting in millimeters can be converted to the new programmatic settings in inches as follows:<br />
{| class="wikitable"<br />
!Old (mm)<br />
!New (inches)<br />
!Typical Gun Tilt (mm)<br />
|-<br />
|15<br />
|<br />
|<br />
|-<br />
|25<br />
|0.82<br />
|9<br />
|-<br />
|44<br />
|1.52<br />
|4<br />
|}<br />
Interpolation plot [[:File:Sputter 3 - height conversion v1.PNG|can be found here.]]<br />
<br />
===Fe and Co Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/1/15/Fe_and_Co_Films_using_Sputter-3.pdf Fe and Co Deposition Recipe]<br />
<br />
===Cu Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/5/5e/Cu_Film_using_Sputter-3.pdf Cu Deposition Recipe]<br />
<br />
===Mo Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/7/7f/46-Mo_Film_using_Sputter3.pdf Mo Deposition Recipe]<br />
<br />
===Ni and Ta Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/b/b6/24-Ni_and_Ta_Films_using_Sputter-3.pdf Ni and Ta Deposition Recipe]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/9/93/Ni_Sputtering_Film_using_Sputter_3-a.pdf Ni Sputtering Film Recipe-3mT-200W]<br />
<br />
===SiO2 Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/e/ef/SiO2-AJA-1-Reactive-Sputter-Uniformity-rev-1.pdf SiO2 Uniformity Data]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/b/b2/SiO2-AJA-1-Reactive-Sputter-Power-Flow-AFM-Roughness-rev1.pdf SiO2 Flow and Bias Variations Including AFM Data]<br />
<br />
===SiN Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/f/fb/SiN-AJA-1-Reactive-Sputtering-Power-Flow-AFM-Rate-Index-rev1.pdf SiN Flow and RF Variations Including AFM Data]<br />
<br />
===Ti Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/3/3b/Ti_Sputtering_Film_using_Sputter_3.pdf Ti Sputtering Film Recipe-3mT-100W]<br />
<br />
==[[Sputter 4 (AJA ATC 2200-V)]]==<br />
<br />
Please see [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=21 the SignupMonkey page] for a list of currently installed targets.<br />
<br />
=== Materials Table (Sputter 4) ===<br />
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended. <br />
{| class="wikitable sortable"<br />
|-<br />
!Material!!P(mT)<br />
!Power Source!!Pow(W)!!Sub(W)!!T(C)!!Ar!!N2!!O2!!Height-Tilt!!Rate(nm/min)!!Stress(MPa)!!Rs(uOhm-cm)!!n@633nm!!k@633nm!!Data Below!!Comment<br />
|-<br />
|Al||5<br />
| ||200||0||20||45||0||0||H2.75-T5||4.4||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|Al2O3<br />
|3<br />
|RF4-Sw1<br />
|200<br />
|0<br />
|20<br />
|30<br />
|0<br />
|1.5<br />
|H2.75-T5<br />
|5.1<br />
|<br />
|<br />
|1.64202<br />
|0<br />
|partial<br />
|Demis D. John<br />
|-<br />
|Au||5<br />
| ||200||0||20||45||0||0||H1-T10||17.7||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|Au||10<br />
| ||300||0||20||45||0||0||H2.75-T5||45.4||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|Cu<br />
|5<br />
|<br />
|150<br />
|0<br />
|20<br />
|30<br />
|0<br />
|0<br />
|H0.82-T9<br />
|6.7<br />
|<br />
|<br />
|<br />
|<br />
|No (SEM available)<br />
|Ning Cao<br />
|-<br />
|Nb||4<br />
| ||250||0||20||30||0||0||H2.00-T7||7.5||-||-||-||-||No||<br />
|-<br />
|Pt||5<br />
| ||200||0||20||45||0||0||H2.75-T5||7.4||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|Pt||3<br />
| ||50(439V)||0||20||45||0||0||H2.75-T5||3.9||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|Ru<br />
|3<br />
|<br />
|200<br />
|<br />
|<br />
|45<br />
|<br />
|<br />
|H2.75-T4<br />
|~10<br />
|<br />
|<br />
|<br />
|<br />
|Yes<br />
|Ning Cao<br />
|-<br />
|Ti||10<br />
| ||200||0||20||45||0||0||H2.75-T5||2.3||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|TiN||3<br />
| ||150||110V||20||48.25||1.75||0||H2.5-T5||2||-||60||-||-||No||<br />
|-<br />
|TiO<sub>2</sub>||3<br />
| ||250(RF:450V)||0||20||45||0||3||H2.75-T5||4.3||-|| ||-||-||Yes||Ning Cao<br />
|-<br />
|TiW||4.5<br />
| ||200||0||20||45||0||0||H1-T10||4.7||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|TiW||4.5<br />
| ||300||0||75||45||0||0||H2.75-T5||9.5||-150 to 150||60||-||-||Yes||10%Ti by Wt<br />
|-<br />
|W||3<br />
| ||300||0||50||45||0||0||H2.75-T5||11.5||-150 to 150||11||-||-||Yes||Jeremy Watcher<br />
|-<br />
<br />
|}<br />
<br />
===Au Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/0/01/Au-Sputter4-5mT-200W-120s.pdf Au Film's AFM Step and Roughness]<br />
<br />
===Al Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/1/17/Al-Sputter4-5mT-200W-30m.pdf Al Film SEM Profile]<br />
<br />
===Al2O3 Deposition (Sputter 4)===<br />
<br />
*Rate: 5.134 nm/min<br />
*[https://en.wikipedia.org/wiki/Cauchy%27s_equation Cauchy] Refractive Index Params (fit from λ=190-1700nm, indicating transparency over this range)<br />
**A = 1.626<br />
**B = 5.980E-3<br />
**C = 1.622E-4<br />
<br />
===Pt Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/a/ab/Pt-Sputter4.pdf Pt Film's AFM Step and Roughness]<br />
<br />
=== Ru Deposition (Sputter 4) ===<br />
* [https://wiki.nanotech.ucsb.edu/w/images/f/f6/SiO2_Etch%2C_Ru_HardMask_-_Fluorine_ICP_Etch_Process_-_Ning_Cao_2019-06.pdf Ruthenium Hardmask for SiO2 Etching - Full Process Traveler] by Ning Cao<br />
** Deposition Rate ~10nm/min<br />
** See [[ICP Etching Recipes#SiO2 Etching|Fluorine-ICP > SiO2 Etching]] page for more info.<br />
<br />
===Ti-Au Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/89/Ti-Au-Sputtering-Films-AJA2-rev1.pdf Ti-Au Deposition Recipe and SEM Cross-Sections]<br />
<br />
===TiO<sub>2</sub> Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/1/19/TiO2_film_using_Sputter4.pdf TiO<sub>2</sub> Film's Refractive Index Spectrum, Resistivity, AFM Roughness]<br />
<br />
===TiW Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/7/78/TiW-Sputter4-4.5mT-300W-300s.pdf TiW Film's AFM Step and Roughness]<br />
===W-TiW Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/c/cc/W-TiW-Sputtering-AJA-4-Data-Recipe-RevB.pdf W-TiW Deposition Recipe]<br />
<br />
==[[Sputter 5 (AJA ATC 2200-V)]]==<br />
<br />
Please see the [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=60 SignupMonkey] page for a list of currently installed targets.<br />
<br />
=== Materials Table (Sputter 5) ===<br />
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.<br />
{| class="wikitable sortable"<br />
|-<br />
!Material!!P(mT)<br />
!Power Source!!Pow(W)!!Sub(V)!!T(C)!!Ar!!N2!!O2!!Height-Tilt!!Rate(nm/min)!!Stress(MPa)!!Rs(uOhm-cm)!!Rq(nm)!!n@633nm!!k@633nm!!LPDb/LPDa*!!Data Below!!Comment<br />
|-<br />
|Al<br />
|5<br />
|<br />
|250<br />
|0<br />
|20<br />
|45<br />
|0<br />
|0<br />
|H1-T10<br />
|2.5<br />
|22<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|No (SEM available)<br />
|Ning<br />
|-<br />
|Al2O3<br />
|1.5<br />
|DC5-SW1<br />
|150<br />
| -<br />
| -<br />
|45<br />
| -<br />
|5<br />
|H2.75-T5<br />
|5.3<br />
|?<br />
|?<br />
|?<br />
|1.641<br />
| -<br />
|?<br />
|No<br />
|Demis 2018-04-13<br />
|-<br />
|Pt<br />
|3.0<br />
|<br />
|200<br />
| -<br />
| -<br />
|45<br />
| -<br />
| -<br />
|H1-T10<br />
|7.03<br />
|?<br />
|?<br />
|?<br />
|2.068<br />
|4.951<br />
|?<br />
|No<br />
|Ning 2021-09-27<br />
|-<br />
|SiO2||3<br />
| ||250||120||20||45||0||2||H1.0-T10||2.32|| ||-||-||1.49||-||153/6384||No||Biljana<br />
|-<br />
|SiO2||3<br />
| ||250||120||20||45||0||4.5||H1.0-T10||2.29||-515||-||0.210||1.49|| ||138/4445||No ( AFM available)||Biljana<br />
|-<br />
|SiO2||3<br />
| ||250||120||20||45||0||6||H1.0-T10||2.32|| ||-||-||1.49||-||27/1515||Yes||Biljana<br />
|-<br />
|Ti<br />
|3.0<br />
|<br />
|200<br />
| -<br />
| -<br />
|45<br />
| -<br />
| -<br />
|H1-T10<br />
|2.52<br />
|?<br />
|?<br />
|?<br />
|2.679<br />
|1.853<br />
|?<br />
|No<br />
|Ning 2021-09-27<br />
|}<br />
''*LPD: light particle detection:''<br />
<br />
*''LPDb: light particle detection before deposition''<br />
*''LPDa: light particle detection after deposition''<br />
<br />
===SiO2 Deposition (Sputter 5)===<br />
<br />
*[https://docs.google.com/spreadsheets/d/1kzrbXdUJNf_-FjLJd-PTrbGDhGCKNNxo_JaOXkSpAF8/edit#gid=Sputter#5 SiO2 film]<br />
<br />
==[[Ion Beam Deposition (Veeco NEXUS)]]==<br />
<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AuBs1GfMrpnXcEdXanZQNko3X0lUcHhVUlNyYnVDUkE&usp=sharing IBD Calibrations Spreadsheet] - Records of historical film depositions (rates, indices), Uniformity etc.<br />
**'''All users are required to enter their calibration deps (simple test deps only)'''<br />
*[https://docs.google.com/spreadsheets/d/1y704PRxvXf8bbqb79CrISnk2t0FeojYVJIjrAcBU2_w/edit#gid=sharing Particulates in SiO2 and Ta2O5 in 2015]<br />
<br />
===SiO{{sub|2}} deposition (IBD)===<br />
<br />
==== SiO<sub>2</sub> Historical Data ====<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/8d/New_IBD_SiO2_Standard_Recipe.pdf SiO<sub>2</sub> Standard Recipe]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dFRJLUZUdXB4WFA1S1BMMWQ4WndpTWc&usp=drive_web#gid=sharing SiO<sub>2</sub> Data December 2014]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGNyV083bmpzMjZpZ0JFVWhoOUpaN3c#gid=sharing SiO<sub>2</sub> Thickness uniformity 2014]<br />
*[https://docs.google.com/spreadsheets/d/1pxQkTm274CVjzlnE3cZgE5ycgXfIk8cVCAwTg5x7Xx4/edit#gid=sharing SiO<sub>2</sub> Data-15min depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1vYSV7iGIMJsqmlxF6bAjdzuaATcDGxBvwlhb2XYJoWg/edit#gid=sharing SiO<sub>2</sub> Thickness uniformity-15 min depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1qnlny3A8jRUPU-8O1ycx9MUFmpti_pRv93rT1pXHMWM/edit#gid=1868267914=sharing SiO<sub>2</sub> Data-1hr depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/12SKWvqxDuyTgWL44wfvrA2gKDy6ihV2XWh6WJsTT9hE/edit#gid=sharing SiO<sub>2</sub> Thickness uniformity-1hr depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1KPLP68f9oC6H2C39r4_Lcd9RkjPiVnZTiz6sMYoJodc/edit#gid=1868267914=sharing SiO<sub>2</sub> Data-1hr depositions 2016]<br />
*[https://docs.google.com/spreadsheets/d/1dFI1B2WxS7oEGMPl2dlLtmiAin-6EKWSEj9hFezB4_w/edit#gid==sharing SiO<sub>2</sub> Thickness uniformity-1hr depositions 2016]<br />
<br />
====SiO<sub>2</sub> 1hr deposition properties:====<br />
<br />
*Dep.rate: ≈ 5.2 nm/min (users must calibrate this prior to critical deps)<br />
*HF e.r.~350 nm/min<br />
*Stress ≈ -390MPa (compressive)<br />
*Refractive Index: ≈ 1.494<br />
*[[http://en.wikipedia.org/wiki/Cauchy's_equation Cauchy Parameters]] (350-2000nm): <br />
**A = 1.480<br />
**B = 0.00498<br />
**C = -3.2606e-5<br />
<br />
===Si<sub>3</sub>N<sub>4</sub> deposition (IBD)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/d/d3/IBD_SiNdeposition.pdf Si<sub>3</sub>N<sub>4</sub> Standard Recipe]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDE4RldRQnA1N1ptOUlHQVc3QjNXSkE#gid=sharing Si<sub>3</sub>N<sub>4</sub> Data December 2014]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEdsbWRhYW9mbFRLem56TjFFWjRwR1E#gid=sharing Si<sub>3</sub>N<sub>4</sub> Thickness uniformity 2014]<br />
<br />
*Deposition Rate: ≈ 4.10 nm/min (users must calibrate this prior to critical deps)<br />
*HF e.r.~11nm/min<br />
*Stress ≈ -1590MPa (compressive)<br />
*Refractive Index: ≈ 1.969<br />
*[[http://en.wikipedia.org/wiki/Cauchy's_equation Cauchy Parameters]] (350-2000nm): <br />
**A = 2.000<br />
**B = 0.01974<br />
**C = 1.2478e-4<br />
<br />
===SiO<sub>x</sub>N<sub>y</sub> deposition (IBD)===<br />
These are some old (2010), initial characterizations only. A recipe improvement would be to increase the Assist O2+N2 = 60sccm total, increasing repeatability. Contact [[Demis D. John|Demis]] for more info.<br />
{|<br />
![[File:IBD SiON Index @ 623nm vs. O2 Gas Flow - v3 - wiki.jpg|alt=plot showing varying refractive index between Si3N4 and SiO2|none|thumb|250x250px|IBD SiO<sub>x</sub>N<sub>y</sub>: Refractive Index vs. O2/N2 Flow.]]<br />
![[File:IBD SiON - Dep rate vs O2 flow - wiki.png|alt=Rate varies monotonically from 53-5 Å/min.|none|thumb|Dep. Rate of IBD SiO<sub>x</sub>N<sub>y</sub> vs. Assist O<sub>2</sub> flow.]]<br />
|}<br />
<br />
===Ta{{sub|2}}O{{sub|5}} deposition (IBD)===<br />
<br />
==== Ta2O5 Historical Data (IBD) ====<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/85/IBD_Ta2O5_deposition_details.pdf Ta{{sub|2}}O{{sub|5}} Standard Recipe]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGhhUGdCR2JudkZJU3pBemR4bS1GWWc#gid=0=sharing Ta{{sub|2}}O{{sub|5}} Data December 2014]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dE5xbVFyUFZqdTdUN0JRSUNvMGFGb2c#gid=sharing Ta{{sub|2}}O{{sub|5}} Thickness uniformity 2014]<br />
<br />
*[https://docs.google.com/spreadsheets/d/1WRqzTTIX4D7Un-XqHqSB66JuSplrMiZAzGvjYFZ-Gtk/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Data December-15 min depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1BZrNtzHwWqfLhvZW4UY01CUfkObW70MxW9jdLhBcunc/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Thickness uniformity-15 min depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1saOA_9SwcPCkuW7uGgOSXhvtwrMkKJUxeS4wRE9qxQ8/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Data December-1hr depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1wXAtWbbE8dvvulJxJXkwQyejgcrz51t-HH4omTq0scs/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Thickness uniformity-1hr depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1A0bVnVgwPfj5JfAtmgNSeto2Rix8qOfiGO9mpXa433g/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Data December-1hr depositions 2016]<br />
*[https://docs.google.com/spreadsheets/d/1U7XUvluOpgD7tsciZ1pAFGiFsKJKvym6mH5hKaSt5b0/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Thickness uniformity-1hr depositions 2016]<br />
<br />
==== Ta2O5 Deposition/Film Properies (IBD) ====<br />
*Ta2O5 1hr depositions:<br />
*Deposition Rate: ≈ 7.8 nm/min (users must calibrate this prior to critical deps)<br />
*HF e.r.~2 nm/min<br />
*Stress ≈ -232MPa (compressive)<br />
*Refractive Index: ≈ 2.172<br />
*[[http://en.wikipedia.org/wiki/Cauchy's_equation Cauchy Parameters]] (350-2000nm): <br />
**A = 2.1123<br />
**B = 0.018901<br />
**C = -0.016222<br />
<br />
===TiO{{sub|2}} deposition (IBD)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/3/3b/New_IBD_TiO2_deposition.pdf TiO<sub>2</sub> Standard Recipe]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGVXVkM4dEdXaU15M09HNGhJbGUycVE#gid=sharing TiO<sub>2</sub> Data December 2014]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dF9YSW9jTDJzY19MbmVEbUQtVzJVdVE#gid=sharing TiO<sub>2</sub> Thickness uniformity 2014]<br />
<br />
*Deposition Rate: ≈ 1.29 nm/min (users must calibrate this prior to critical deps)<br />
*HF etch rate ~5.34nm/min<br />
*Stress ≈ -445MPa (compressive)<br />
*Refractive Index: ≈ 2.259<br />
*[[http://en.wikipedia.org/wiki/Cauchy's_equation Cauchy Parameters]] (350-2000nm): <br />
**A = 2.435<br />
**B = -4.9045e-4<br />
**C = 0.01309<br />
*Absorbing < ~350nm<br />
<br />
===Al<sub>2</sub>O<sub>3</sub> deposition (IBD)===<br />
<br />
*Al2O3 standard recipe: 1_Al2O3_dep<br />
<br />
*[https://docs.google.com/spreadsheets/d/1Qwxa7rtq2kGeFUQxnjGFgtdCJP4uIX_bdUcCWFvO72g/edit#gid= Al2O3 Data 2018]<br />
*[https://docs.google.com/spreadsheets/d/1rjwDQ0WJOIL7XWx2KWQ4fEPjNkr6GEmiXGmQXZnWFOI/edit#gid= Al2O3 Thickness uniformity 2018]<br />
<br />
*Deposition Rate: ≈ 2.05nm/min (users must calibrate this prior to critical deps)<br />
*HF etch rate ~167nm/min<br />
*Stress ≈ -332MPa (compressive)<br />
*Refractive Index: ≈ 1.656<br />
*[[http://en.wikipedia.org/wiki/Cauchy's_equation Cauchy Parameters]] (350-2000nm):( working on) <br />
**A =<br />
**B =<br />
**C =<br />
*Absorbing < ~350nm<br />
<br />
== Reference Recipes (Disabled Tools) ==<br />
<br />
=== [[Sputter 2 (SFI Endeavor)|<big><u>Sputter 2 (SFI Endeavor)</u></big>]] ===<br />
'''This Tool has been Disabled, and is not available for use any more! These recipes are displayed here for historical/reference purposes only.'''<br />
'''Al Deposition (Sputter 2)'''<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/0/05/20-Al-Sputtering-Film-Sputter-2.pdf Al Deposition Recipe]<br />
'''AlN<sub>x</sub> Deposition (Sputter 2)'''<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/8c/Sputter-2-AlN-Endeavor-rev1.pdf AlN<sub>x</sub> Deposition Recipe]<br />
'''Au Deposition (Sputter 2)'''<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/8a/21-Au-Sputter-film-recipes-Sputter-2.pdf Au Deposition Recipe]<br />
'''TiO<sub>2</sub> Deposition (Sputter 2)'''<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/c/c4/22-TiO2-Film-Sputter-2.pdf TiO2<sub>2</sub> Deposition Recipe]</div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=Sputtering_Recipes&diff=159254
Sputtering Recipes
2021-09-27T18:19:12Z
<p>Ningcao: /* Materials Table (Sputter 5) */</p>
<hr />
<div>{{recipes|Vacuum Deposition}}<br />
{{rl|Atomic Layer Deposition Recipes|Pt deposition (ALD)}}<br />
<br />
==[[Sputter 3 (AJA ATC 2000-F)]]==<br />
<br />
Please see the [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=20 SignupMonkey Page] for a list of currently installed targets.<br />
<br />
=== Materials Table (Sputter 3) ===<br />
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.<br />
{| class="wikitable sortable"<br />
|-<br />
!Material!!P(mT)!!Pow(W)!!Sub(W)!!T(C)!!Ar!!N2!!O2!!Height-Tilt!!Rate(nm/min)!!Stress(MPa)!!Rs(uOhm-cm)!!n@633nm!!k@633nm<br />
!Target Consumed Lower Limit!!Data Below!!Comment<br />
|-<br />
|Au<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
|Set: 200 W<br />
Read: 400 VDC<br />
|no<br />
|<br />
|-<br />
|Al2O3<br />
|3<br />
|200 (RF2)<br />
|off<br />
|20<br />
|30<br />
|<br />
|1.5<br />
|1.52"-4mm<br />
|5.32<br />
|<br />
|<br />
|1.6478<br />
|0<br />
|<br />
|no<br />
|Demis D. John<br />
|-<br />
|Co||10(5)||200||0||20||25||0||0||25-9||2.3||-||-||-||-<br />
| ||yes||Alex K<br />
|-<br />
|Cr||5||200||0||20||25||0||0||44-4||6.84||-||-||-||-<br />
| ||no||Brian<br />
|-<br />
|Cu||1.5||50(395v)||0||20||25||0||0||25-9||4.15||-||-||-||-<br />
| ||no||Ning<br />
|-<br />
|Cu||5||150(~490v)||0||20||15||0||0||0.82"-9||8||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Fe||10(5)||200||0||20||25||0||0||25-9||1.25||-||-||-||-<br />
| ||No||Alex K<br />
|-<br />
|Mo||3||200||0||20||25||0||0||44-4||13.15||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ni||5||150||0||20||25||0||0||44-4||5.23||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ni||5||150||0||20||25||0||0||25-9||1.82||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ni||5||75||0||20||25||0||0||44-4||2.50||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ni||3||200||0||20||25||0||0||44-4||9.4||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ni||1.5||50(399v)||0||20||25||0||0||25-9||0.96||-||-||-||-<br />
| ||no||Ning<br />
|-<br />
|Pt||3||50||0||20||25||0||0||0.82"-9||2.9||-||-||-||-<br />
| ||no||Ning<br />
|-<br />
|Si||8||250||0||25||25||0||0||15-3||1.4||-||-||-||-<br />
| ||no||Gerhard - ramp 2W/s - 3% Unif 4" wafer<br />
|-<br />
|SiN||3||200||10||20||25||3||0||25-9||1.56||-||-||1.992||-<br />
| ||yes||Brian<br />
|-<br />
|SiN||3||250||10||20||25||2.5||0||25-9||2.1||-||-||2.06||-<br />
| ||yes||Brian<br />
|-<br />
|SiO2||3||200||10||20||25||0||3||25-9||3.68||-||-||1.447||-<br />
| ||yes||Brian<br />
|-<br />
|SiO2||3||200||10||20||25||0||5||45-3||2.60||-||-||1.471||-<br />
| ||yes||Brian<br />
|-<br />
|SiO2||3||250||10||20||25||0||2.5||25-9||4.3||-||-||1.485||-<br />
| ||yes||Brian<br />
|-<br />
|Ta||5||150||0||20||25||0||0||44-4||9.47||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ta||5||75||0||20||25||0||0||44-4||5.03||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ti||3||100||0||20||25||0||0||25-9||1.34||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|SampleClean-NativeSiO2||10||0||18||20||25||0||0||44-4||-||-||-||-||-<br />
| ||yes||150Volts 5 min<br />
|-<br />
|}<br />
<br />
===Height Conversion for Older Recipes===<br />
Old recipes using the manual Height setting in millimeters can be converted to the new programmatic settings in inches as follows:<br />
{| class="wikitable"<br />
!Old (mm)<br />
!New (inches)<br />
!Typical Gun Tilt (mm)<br />
|-<br />
|15<br />
|<br />
|<br />
|-<br />
|25<br />
|0.82<br />
|9<br />
|-<br />
|44<br />
|1.52<br />
|4<br />
|}<br />
Interpolation plot [[:File:Sputter 3 - height conversion v1.PNG|can be found here.]]<br />
<br />
===Fe and Co Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/1/15/Fe_and_Co_Films_using_Sputter-3.pdf Fe and Co Deposition Recipe]<br />
<br />
===Cu Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/5/5e/Cu_Film_using_Sputter-3.pdf Cu Deposition Recipe]<br />
<br />
===Mo Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/7/7f/46-Mo_Film_using_Sputter3.pdf Mo Deposition Recipe]<br />
<br />
===Ni and Ta Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/b/b6/24-Ni_and_Ta_Films_using_Sputter-3.pdf Ni and Ta Deposition Recipe]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/9/93/Ni_Sputtering_Film_using_Sputter_3-a.pdf Ni Sputtering Film Recipe-3mT-200W]<br />
<br />
===SiO2 Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/e/ef/SiO2-AJA-1-Reactive-Sputter-Uniformity-rev-1.pdf SiO2 Uniformity Data]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/b/b2/SiO2-AJA-1-Reactive-Sputter-Power-Flow-AFM-Roughness-rev1.pdf SiO2 Flow and Bias Variations Including AFM Data]<br />
<br />
===SiN Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/f/fb/SiN-AJA-1-Reactive-Sputtering-Power-Flow-AFM-Rate-Index-rev1.pdf SiN Flow and RF Variations Including AFM Data]<br />
<br />
===Ti Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/3/3b/Ti_Sputtering_Film_using_Sputter_3.pdf Ti Sputtering Film Recipe-3mT-100W]<br />
<br />
==[[Sputter 4 (AJA ATC 2200-V)]]==<br />
<br />
Please see [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=21 the SignupMonkey page] for a list of currently installed targets.<br />
<br />
=== Materials Table (Sputter 4) ===<br />
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended. <br />
{| class="wikitable sortable"<br />
|-<br />
!Material!!P(mT)<br />
!Power Source!!Pow(W)!!Sub(W)!!T(C)!!Ar!!N2!!O2!!Height-Tilt!!Rate(nm/min)!!Stress(MPa)!!Rs(uOhm-cm)!!n@633nm!!k@633nm!!Data Below!!Comment<br />
|-<br />
|Al||5<br />
| ||200||0||20||45||0||0||H2.75-T5||4.4||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|Al2O3<br />
|3<br />
|RF4-Sw1<br />
|200<br />
|0<br />
|20<br />
|30<br />
|0<br />
|1.5<br />
|H2.75-T5<br />
|5.1<br />
|<br />
|<br />
|1.64202<br />
|0<br />
|partial<br />
|Demis D. John<br />
|-<br />
|Au||5<br />
| ||200||0||20||45||0||0||H1-T10||17.7||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|Au||10<br />
| ||300||0||20||45||0||0||H2.75-T5||45.4||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|Cu<br />
|5<br />
|<br />
|150<br />
|0<br />
|20<br />
|30<br />
|0<br />
|0<br />
|H0.82-T9<br />
|6.7<br />
|<br />
|<br />
|<br />
|<br />
|No (SEM available)<br />
|Ning Cao<br />
|-<br />
|Nb||4<br />
| ||250||0||20||30||0||0||H2.00-T7||7.5||-||-||-||-||No||<br />
|-<br />
|Pt||5<br />
| ||200||0||20||45||0||0||H2.75-T5||7.4||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|Pt||3<br />
| ||50(439V)||0||20||45||0||0||H2.75-T5||3.9||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|Ru<br />
|3<br />
|<br />
|200<br />
|<br />
|<br />
|45<br />
|<br />
|<br />
|H2.75-T4<br />
|~10<br />
|<br />
|<br />
|<br />
|<br />
|Yes<br />
|Ning Cao<br />
|-<br />
|Ti||10<br />
| ||200||0||20||45||0||0||H2.75-T5||2.3||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|TiN||3<br />
| ||150||110V||20||48.25||1.75||0||H2.5-T5||2||-||60||-||-||No||<br />
|-<br />
|TiO<sub>2</sub>||3<br />
| ||250(RF:450V)||0||20||45||0||3||H2.75-T5||4.3||-|| ||-||-||Yes||Ning Cao<br />
|-<br />
|TiW||4.5<br />
| ||200||0||20||45||0||0||H1-T10||4.7||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|TiW||4.5<br />
| ||300||0||75||45||0||0||H2.75-T5||9.5||-150 to 150||60||-||-||Yes||10%Ti by Wt<br />
|-<br />
|W||3<br />
| ||300||0||50||45||0||0||H2.75-T5||11.5||-150 to 150||11||-||-||Yes||Jeremy Watcher<br />
|-<br />
<br />
|}<br />
<br />
===Au Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/0/01/Au-Sputter4-5mT-200W-120s.pdf Au Film's AFM Step and Roughness]<br />
<br />
===Al Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/1/17/Al-Sputter4-5mT-200W-30m.pdf Al Film SEM Profile]<br />
<br />
===Al2O3 Deposition (Sputter 4)===<br />
<br />
*Rate: 5.134 nm/min<br />
*[https://en.wikipedia.org/wiki/Cauchy%27s_equation Cauchy] Refractive Index Params (fit from λ=190-1700nm, indicating transparency over this range)<br />
**A = 1.626<br />
**B = 5.980E-3<br />
**C = 1.622E-4<br />
<br />
===Pt Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/a/ab/Pt-Sputter4.pdf Pt Film's AFM Step and Roughness]<br />
<br />
=== Ru Deposition (Sputter 4) ===<br />
* [https://wiki.nanotech.ucsb.edu/w/images/f/f6/SiO2_Etch%2C_Ru_HardMask_-_Fluorine_ICP_Etch_Process_-_Ning_Cao_2019-06.pdf Ruthenium Hardmask for SiO2 Etching - Full Process Traveler] by Ning Cao<br />
** Deposition Rate ~10nm/min<br />
** See [[ICP Etching Recipes#SiO2 Etching|Fluorine-ICP > SiO2 Etching]] page for more info.<br />
<br />
===Ti-Au Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/89/Ti-Au-Sputtering-Films-AJA2-rev1.pdf Ti-Au Deposition Recipe and SEM Cross-Sections]<br />
<br />
===TiO<sub>2</sub> Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/1/19/TiO2_film_using_Sputter4.pdf TiO<sub>2</sub> Film's Refractive Index Spectrum, Resistivity, AFM Roughness]<br />
<br />
===TiW Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/7/78/TiW-Sputter4-4.5mT-300W-300s.pdf TiW Film's AFM Step and Roughness]<br />
===W-TiW Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/c/cc/W-TiW-Sputtering-AJA-4-Data-Recipe-RevB.pdf W-TiW Deposition Recipe]<br />
<br />
==[[Sputter 5 (AJA ATC 2200-V)]]==<br />
<br />
Please see the [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=60 SignupMonkey] page for a list of currently installed targets.<br />
<br />
=== Materials Table (Sputter 5) ===<br />
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.<br />
{| class="wikitable sortable"<br />
|-<br />
!Material!!P(mT)<br />
!Power Source!!Pow(W)!!Sub(V)!!T(C)!!Ar!!N2!!O2!!Height-Tilt!!Rate(nm/min)!!Stress(MPa)!!Rs(uOhm-cm)!!Rq(nm)!!n@633nm!!k@633nm!!LPDb/LPDa*!!Data Below!!Comment<br />
|-<br />
|Al<br />
|5<br />
|<br />
|250<br />
|0<br />
|20<br />
|45<br />
|0<br />
|0<br />
|H1-T10<br />
|2.5<br />
|22<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|No (SEM available)<br />
|Ning<br />
|-<br />
|Al2O3<br />
|1.5<br />
|DC5-SW1<br />
|150<br />
| -<br />
| -<br />
|45<br />
| -<br />
|5<br />
|H2.75-T5<br />
|5.3<br />
|?<br />
|?<br />
|?<br />
|1.641<br />
| -<br />
|?<br />
|No<br />
|Demis 2018-04-13<br />
|-<br />
|Pt<br />
|3.0<br />
|<br />
|200<br />
| -<br />
| -<br />
|45<br />
| -<br />
| -<br />
|H1-T10<br />
|7.03<br />
|?<br />
|?<br />
|?<br />
|2.068<br />
|4.951<br />
|?<br />
|No<br />
|Ning 2021-09-27<br />
|-<br />
|SiO2||3<br />
| ||250||120||20||45||0||2||H1.0-T10||2.32|| ||-||-||1.49||-||153/6384||No||Biljana<br />
|-<br />
|SiO2||3<br />
| ||250||120||20||45||0||4.5||H1.0-T10||2.29||-515||-||0.210||1.49|| ||138/4445||No ( AFM available)||Biljana<br />
|-<br />
|SiO2||3<br />
| ||250||120||20||45||0||6||H1.0-T10||2.32|| ||-||-||1.49||-||27/1515||Yes||Biljana<br />
|-<br />
|}<br />
''*LPD: light particle detection:''<br />
<br />
*''LPDb: light particle detection before deposition''<br />
*''LPDa: light particle detection after deposition''<br />
<br />
===SiO2 Deposition (Sputter 5)===<br />
<br />
*[https://docs.google.com/spreadsheets/d/1kzrbXdUJNf_-FjLJd-PTrbGDhGCKNNxo_JaOXkSpAF8/edit#gid=Sputter#5 SiO2 film]<br />
<br />
==[[Ion Beam Deposition (Veeco NEXUS)]]==<br />
<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AuBs1GfMrpnXcEdXanZQNko3X0lUcHhVUlNyYnVDUkE&usp=sharing IBD Calibrations Spreadsheet] - Records of historical film depositions (rates, indices), Uniformity etc.<br />
**'''All users are required to enter their calibration deps (simple test deps only)'''<br />
*[https://docs.google.com/spreadsheets/d/1y704PRxvXf8bbqb79CrISnk2t0FeojYVJIjrAcBU2_w/edit#gid=sharing Particulates in SiO2 and Ta2O5 in 2015]<br />
<br />
===SiO{{sub|2}} deposition (IBD)===<br />
<br />
==== SiO<sub>2</sub> Historical Data ====<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/8d/New_IBD_SiO2_Standard_Recipe.pdf SiO<sub>2</sub> Standard Recipe]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dFRJLUZUdXB4WFA1S1BMMWQ4WndpTWc&usp=drive_web#gid=sharing SiO<sub>2</sub> Data December 2014]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGNyV083bmpzMjZpZ0JFVWhoOUpaN3c#gid=sharing SiO<sub>2</sub> Thickness uniformity 2014]<br />
*[https://docs.google.com/spreadsheets/d/1pxQkTm274CVjzlnE3cZgE5ycgXfIk8cVCAwTg5x7Xx4/edit#gid=sharing SiO<sub>2</sub> Data-15min depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1vYSV7iGIMJsqmlxF6bAjdzuaATcDGxBvwlhb2XYJoWg/edit#gid=sharing SiO<sub>2</sub> Thickness uniformity-15 min depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1qnlny3A8jRUPU-8O1ycx9MUFmpti_pRv93rT1pXHMWM/edit#gid=1868267914=sharing SiO<sub>2</sub> Data-1hr depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/12SKWvqxDuyTgWL44wfvrA2gKDy6ihV2XWh6WJsTT9hE/edit#gid=sharing SiO<sub>2</sub> Thickness uniformity-1hr depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1KPLP68f9oC6H2C39r4_Lcd9RkjPiVnZTiz6sMYoJodc/edit#gid=1868267914=sharing SiO<sub>2</sub> Data-1hr depositions 2016]<br />
*[https://docs.google.com/spreadsheets/d/1dFI1B2WxS7oEGMPl2dlLtmiAin-6EKWSEj9hFezB4_w/edit#gid==sharing SiO<sub>2</sub> Thickness uniformity-1hr depositions 2016]<br />
<br />
====SiO<sub>2</sub> 1hr deposition properties:====<br />
<br />
*Dep.rate: ≈ 5.2 nm/min (users must calibrate this prior to critical deps)<br />
*HF e.r.~350 nm/min<br />
*Stress ≈ -390MPa (compressive)<br />
*Refractive Index: ≈ 1.494<br />
*[[http://en.wikipedia.org/wiki/Cauchy's_equation Cauchy Parameters]] (350-2000nm): <br />
**A = 1.480<br />
**B = 0.00498<br />
**C = -3.2606e-5<br />
<br />
===Si<sub>3</sub>N<sub>4</sub> deposition (IBD)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/d/d3/IBD_SiNdeposition.pdf Si<sub>3</sub>N<sub>4</sub> Standard Recipe]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDE4RldRQnA1N1ptOUlHQVc3QjNXSkE#gid=sharing Si<sub>3</sub>N<sub>4</sub> Data December 2014]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEdsbWRhYW9mbFRLem56TjFFWjRwR1E#gid=sharing Si<sub>3</sub>N<sub>4</sub> Thickness uniformity 2014]<br />
<br />
*Deposition Rate: ≈ 4.10 nm/min (users must calibrate this prior to critical deps)<br />
*HF e.r.~11nm/min<br />
*Stress ≈ -1590MPa (compressive)<br />
*Refractive Index: ≈ 1.969<br />
*[[http://en.wikipedia.org/wiki/Cauchy's_equation Cauchy Parameters]] (350-2000nm): <br />
**A = 2.000<br />
**B = 0.01974<br />
**C = 1.2478e-4<br />
<br />
===SiO<sub>x</sub>N<sub>y</sub> deposition (IBD)===<br />
These are some old (2010), initial characterizations only. A recipe improvement would be to increase the Assist O2+N2 = 60sccm total, increasing repeatability. Contact [[Demis D. John|Demis]] for more info.<br />
{|<br />
![[File:IBD SiON Index @ 623nm vs. O2 Gas Flow - v3 - wiki.jpg|alt=plot showing varying refractive index between Si3N4 and SiO2|none|thumb|250x250px|IBD SiO<sub>x</sub>N<sub>y</sub>: Refractive Index vs. O2/N2 Flow.]]<br />
![[File:IBD SiON - Dep rate vs O2 flow - wiki.png|alt=Rate varies monotonically from 53-5 Å/min.|none|thumb|Dep. Rate of IBD SiO<sub>x</sub>N<sub>y</sub> vs. Assist O<sub>2</sub> flow.]]<br />
|}<br />
<br />
===Ta{{sub|2}}O{{sub|5}} deposition (IBD)===<br />
<br />
==== Ta2O5 Historical Data (IBD) ====<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/85/IBD_Ta2O5_deposition_details.pdf Ta{{sub|2}}O{{sub|5}} Standard Recipe]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGhhUGdCR2JudkZJU3pBemR4bS1GWWc#gid=0=sharing Ta{{sub|2}}O{{sub|5}} Data December 2014]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dE5xbVFyUFZqdTdUN0JRSUNvMGFGb2c#gid=sharing Ta{{sub|2}}O{{sub|5}} Thickness uniformity 2014]<br />
<br />
*[https://docs.google.com/spreadsheets/d/1WRqzTTIX4D7Un-XqHqSB66JuSplrMiZAzGvjYFZ-Gtk/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Data December-15 min depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1BZrNtzHwWqfLhvZW4UY01CUfkObW70MxW9jdLhBcunc/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Thickness uniformity-15 min depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1saOA_9SwcPCkuW7uGgOSXhvtwrMkKJUxeS4wRE9qxQ8/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Data December-1hr depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1wXAtWbbE8dvvulJxJXkwQyejgcrz51t-HH4omTq0scs/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Thickness uniformity-1hr depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1A0bVnVgwPfj5JfAtmgNSeto2Rix8qOfiGO9mpXa433g/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Data December-1hr depositions 2016]<br />
*[https://docs.google.com/spreadsheets/d/1U7XUvluOpgD7tsciZ1pAFGiFsKJKvym6mH5hKaSt5b0/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Thickness uniformity-1hr depositions 2016]<br />
<br />
==== Ta2O5 Deposition/Film Properies (IBD) ====<br />
*Ta2O5 1hr depositions:<br />
*Deposition Rate: ≈ 7.8 nm/min (users must calibrate this prior to critical deps)<br />
*HF e.r.~2 nm/min<br />
*Stress ≈ -232MPa (compressive)<br />
*Refractive Index: ≈ 2.172<br />
*[[http://en.wikipedia.org/wiki/Cauchy's_equation Cauchy Parameters]] (350-2000nm): <br />
**A = 2.1123<br />
**B = 0.018901<br />
**C = -0.016222<br />
<br />
===TiO{{sub|2}} deposition (IBD)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/3/3b/New_IBD_TiO2_deposition.pdf TiO<sub>2</sub> Standard Recipe]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGVXVkM4dEdXaU15M09HNGhJbGUycVE#gid=sharing TiO<sub>2</sub> Data December 2014]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dF9YSW9jTDJzY19MbmVEbUQtVzJVdVE#gid=sharing TiO<sub>2</sub> Thickness uniformity 2014]<br />
<br />
*Deposition Rate: ≈ 1.29 nm/min (users must calibrate this prior to critical deps)<br />
*HF etch rate ~5.34nm/min<br />
*Stress ≈ -445MPa (compressive)<br />
*Refractive Index: ≈ 2.259<br />
*[[http://en.wikipedia.org/wiki/Cauchy's_equation Cauchy Parameters]] (350-2000nm): <br />
**A = 2.435<br />
**B = -4.9045e-4<br />
**C = 0.01309<br />
*Absorbing < ~350nm<br />
<br />
===Al<sub>2</sub>O<sub>3</sub> deposition (IBD)===<br />
<br />
*Al2O3 standard recipe: 1_Al2O3_dep<br />
<br />
*[https://docs.google.com/spreadsheets/d/1Qwxa7rtq2kGeFUQxnjGFgtdCJP4uIX_bdUcCWFvO72g/edit#gid= Al2O3 Data 2018]<br />
*[https://docs.google.com/spreadsheets/d/1rjwDQ0WJOIL7XWx2KWQ4fEPjNkr6GEmiXGmQXZnWFOI/edit#gid= Al2O3 Thickness uniformity 2018]<br />
<br />
*Deposition Rate: ≈ 2.05nm/min (users must calibrate this prior to critical deps)<br />
*HF etch rate ~167nm/min<br />
*Stress ≈ -332MPa (compressive)<br />
*Refractive Index: ≈ 1.656<br />
*[[http://en.wikipedia.org/wiki/Cauchy's_equation Cauchy Parameters]] (350-2000nm):( working on) <br />
**A =<br />
**B =<br />
**C =<br />
*Absorbing < ~350nm<br />
<br />
== Reference Recipes (Disabled Tools) ==<br />
<br />
=== [[Sputter 2 (SFI Endeavor)|<big><u>Sputter 2 (SFI Endeavor)</u></big>]] ===<br />
'''This Tool has been Disabled, and is not available for use any more! These recipes are displayed here for historical/reference purposes only.'''<br />
'''Al Deposition (Sputter 2)'''<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/0/05/20-Al-Sputtering-Film-Sputter-2.pdf Al Deposition Recipe]<br />
'''AlN<sub>x</sub> Deposition (Sputter 2)'''<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/8c/Sputter-2-AlN-Endeavor-rev1.pdf AlN<sub>x</sub> Deposition Recipe]<br />
'''Au Deposition (Sputter 2)'''<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/8a/21-Au-Sputter-film-recipes-Sputter-2.pdf Au Deposition Recipe]<br />
'''TiO<sub>2</sub> Deposition (Sputter 2)'''<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/c/c4/22-TiO2-Film-Sputter-2.pdf TiO2<sub>2</sub> Deposition Recipe]</div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=Sputtering_Recipes&diff=159253
Sputtering Recipes
2021-09-27T18:16:41Z
<p>Ningcao: /* Materials Table (Sputter 5) */</p>
<hr />
<div>{{recipes|Vacuum Deposition}}<br />
{{rl|Atomic Layer Deposition Recipes|Pt deposition (ALD)}}<br />
<br />
==[[Sputter 3 (AJA ATC 2000-F)]]==<br />
<br />
Please see the [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=20 SignupMonkey Page] for a list of currently installed targets.<br />
<br />
=== Materials Table (Sputter 3) ===<br />
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.<br />
{| class="wikitable sortable"<br />
|-<br />
!Material!!P(mT)!!Pow(W)!!Sub(W)!!T(C)!!Ar!!N2!!O2!!Height-Tilt!!Rate(nm/min)!!Stress(MPa)!!Rs(uOhm-cm)!!n@633nm!!k@633nm<br />
!Target Consumed Lower Limit!!Data Below!!Comment<br />
|-<br />
|Au<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
|Set: 200 W<br />
Read: 400 VDC<br />
|no<br />
|<br />
|-<br />
|Al2O3<br />
|3<br />
|200 (RF2)<br />
|off<br />
|20<br />
|30<br />
|<br />
|1.5<br />
|1.52"-4mm<br />
|5.32<br />
|<br />
|<br />
|1.6478<br />
|0<br />
|<br />
|no<br />
|Demis D. John<br />
|-<br />
|Co||10(5)||200||0||20||25||0||0||25-9||2.3||-||-||-||-<br />
| ||yes||Alex K<br />
|-<br />
|Cr||5||200||0||20||25||0||0||44-4||6.84||-||-||-||-<br />
| ||no||Brian<br />
|-<br />
|Cu||1.5||50(395v)||0||20||25||0||0||25-9||4.15||-||-||-||-<br />
| ||no||Ning<br />
|-<br />
|Cu||5||150(~490v)||0||20||15||0||0||0.82"-9||8||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Fe||10(5)||200||0||20||25||0||0||25-9||1.25||-||-||-||-<br />
| ||No||Alex K<br />
|-<br />
|Mo||3||200||0||20||25||0||0||44-4||13.15||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ni||5||150||0||20||25||0||0||44-4||5.23||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ni||5||150||0||20||25||0||0||25-9||1.82||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ni||5||75||0||20||25||0||0||44-4||2.50||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ni||3||200||0||20||25||0||0||44-4||9.4||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ni||1.5||50(399v)||0||20||25||0||0||25-9||0.96||-||-||-||-<br />
| ||no||Ning<br />
|-<br />
|Pt||3||50||0||20||25||0||0||0.82"-9||2.9||-||-||-||-<br />
| ||no||Ning<br />
|-<br />
|Si||8||250||0||25||25||0||0||15-3||1.4||-||-||-||-<br />
| ||no||Gerhard - ramp 2W/s - 3% Unif 4" wafer<br />
|-<br />
|SiN||3||200||10||20||25||3||0||25-9||1.56||-||-||1.992||-<br />
| ||yes||Brian<br />
|-<br />
|SiN||3||250||10||20||25||2.5||0||25-9||2.1||-||-||2.06||-<br />
| ||yes||Brian<br />
|-<br />
|SiO2||3||200||10||20||25||0||3||25-9||3.68||-||-||1.447||-<br />
| ||yes||Brian<br />
|-<br />
|SiO2||3||200||10||20||25||0||5||45-3||2.60||-||-||1.471||-<br />
| ||yes||Brian<br />
|-<br />
|SiO2||3||250||10||20||25||0||2.5||25-9||4.3||-||-||1.485||-<br />
| ||yes||Brian<br />
|-<br />
|Ta||5||150||0||20||25||0||0||44-4||9.47||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ta||5||75||0||20||25||0||0||44-4||5.03||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ti||3||100||0||20||25||0||0||25-9||1.34||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|SampleClean-NativeSiO2||10||0||18||20||25||0||0||44-4||-||-||-||-||-<br />
| ||yes||150Volts 5 min<br />
|-<br />
|}<br />
<br />
===Height Conversion for Older Recipes===<br />
Old recipes using the manual Height setting in millimeters can be converted to the new programmatic settings in inches as follows:<br />
{| class="wikitable"<br />
!Old (mm)<br />
!New (inches)<br />
!Typical Gun Tilt (mm)<br />
|-<br />
|15<br />
|<br />
|<br />
|-<br />
|25<br />
|0.82<br />
|9<br />
|-<br />
|44<br />
|1.52<br />
|4<br />
|}<br />
Interpolation plot [[:File:Sputter 3 - height conversion v1.PNG|can be found here.]]<br />
<br />
===Fe and Co Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/1/15/Fe_and_Co_Films_using_Sputter-3.pdf Fe and Co Deposition Recipe]<br />
<br />
===Cu Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/5/5e/Cu_Film_using_Sputter-3.pdf Cu Deposition Recipe]<br />
<br />
===Mo Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/7/7f/46-Mo_Film_using_Sputter3.pdf Mo Deposition Recipe]<br />
<br />
===Ni and Ta Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/b/b6/24-Ni_and_Ta_Films_using_Sputter-3.pdf Ni and Ta Deposition Recipe]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/9/93/Ni_Sputtering_Film_using_Sputter_3-a.pdf Ni Sputtering Film Recipe-3mT-200W]<br />
<br />
===SiO2 Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/e/ef/SiO2-AJA-1-Reactive-Sputter-Uniformity-rev-1.pdf SiO2 Uniformity Data]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/b/b2/SiO2-AJA-1-Reactive-Sputter-Power-Flow-AFM-Roughness-rev1.pdf SiO2 Flow and Bias Variations Including AFM Data]<br />
<br />
===SiN Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/f/fb/SiN-AJA-1-Reactive-Sputtering-Power-Flow-AFM-Rate-Index-rev1.pdf SiN Flow and RF Variations Including AFM Data]<br />
<br />
===Ti Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/3/3b/Ti_Sputtering_Film_using_Sputter_3.pdf Ti Sputtering Film Recipe-3mT-100W]<br />
<br />
==[[Sputter 4 (AJA ATC 2200-V)]]==<br />
<br />
Please see [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=21 the SignupMonkey page] for a list of currently installed targets.<br />
<br />
=== Materials Table (Sputter 4) ===<br />
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended. <br />
{| class="wikitable sortable"<br />
|-<br />
!Material!!P(mT)<br />
!Power Source!!Pow(W)!!Sub(W)!!T(C)!!Ar!!N2!!O2!!Height-Tilt!!Rate(nm/min)!!Stress(MPa)!!Rs(uOhm-cm)!!n@633nm!!k@633nm!!Data Below!!Comment<br />
|-<br />
|Al||5<br />
| ||200||0||20||45||0||0||H2.75-T5||4.4||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|Al2O3<br />
|3<br />
|RF4-Sw1<br />
|200<br />
|0<br />
|20<br />
|30<br />
|0<br />
|1.5<br />
|H2.75-T5<br />
|5.1<br />
|<br />
|<br />
|1.64202<br />
|0<br />
|partial<br />
|Demis D. John<br />
|-<br />
|Au||5<br />
| ||200||0||20||45||0||0||H1-T10||17.7||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|Au||10<br />
| ||300||0||20||45||0||0||H2.75-T5||45.4||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|Cu<br />
|5<br />
|<br />
|150<br />
|0<br />
|20<br />
|30<br />
|0<br />
|0<br />
|H0.82-T9<br />
|6.7<br />
|<br />
|<br />
|<br />
|<br />
|No (SEM available)<br />
|Ning Cao<br />
|-<br />
|Nb||4<br />
| ||250||0||20||30||0||0||H2.00-T7||7.5||-||-||-||-||No||<br />
|-<br />
|Pt||5<br />
| ||200||0||20||45||0||0||H2.75-T5||7.4||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|Pt||3<br />
| ||50(439V)||0||20||45||0||0||H2.75-T5||3.9||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|Ru<br />
|3<br />
|<br />
|200<br />
|<br />
|<br />
|45<br />
|<br />
|<br />
|H2.75-T4<br />
|~10<br />
|<br />
|<br />
|<br />
|<br />
|Yes<br />
|Ning Cao<br />
|-<br />
|Ti||10<br />
| ||200||0||20||45||0||0||H2.75-T5||2.3||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|TiN||3<br />
| ||150||110V||20||48.25||1.75||0||H2.5-T5||2||-||60||-||-||No||<br />
|-<br />
|TiO<sub>2</sub>||3<br />
| ||250(RF:450V)||0||20||45||0||3||H2.75-T5||4.3||-|| ||-||-||Yes||Ning Cao<br />
|-<br />
|TiW||4.5<br />
| ||200||0||20||45||0||0||H1-T10||4.7||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|TiW||4.5<br />
| ||300||0||75||45||0||0||H2.75-T5||9.5||-150 to 150||60||-||-||Yes||10%Ti by Wt<br />
|-<br />
|W||3<br />
| ||300||0||50||45||0||0||H2.75-T5||11.5||-150 to 150||11||-||-||Yes||Jeremy Watcher<br />
|-<br />
<br />
|}<br />
<br />
===Au Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/0/01/Au-Sputter4-5mT-200W-120s.pdf Au Film's AFM Step and Roughness]<br />
<br />
===Al Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/1/17/Al-Sputter4-5mT-200W-30m.pdf Al Film SEM Profile]<br />
<br />
===Al2O3 Deposition (Sputter 4)===<br />
<br />
*Rate: 5.134 nm/min<br />
*[https://en.wikipedia.org/wiki/Cauchy%27s_equation Cauchy] Refractive Index Params (fit from λ=190-1700nm, indicating transparency over this range)<br />
**A = 1.626<br />
**B = 5.980E-3<br />
**C = 1.622E-4<br />
<br />
===Pt Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/a/ab/Pt-Sputter4.pdf Pt Film's AFM Step and Roughness]<br />
<br />
=== Ru Deposition (Sputter 4) ===<br />
* [https://wiki.nanotech.ucsb.edu/w/images/f/f6/SiO2_Etch%2C_Ru_HardMask_-_Fluorine_ICP_Etch_Process_-_Ning_Cao_2019-06.pdf Ruthenium Hardmask for SiO2 Etching - Full Process Traveler] by Ning Cao<br />
** Deposition Rate ~10nm/min<br />
** See [[ICP Etching Recipes#SiO2 Etching|Fluorine-ICP > SiO2 Etching]] page for more info.<br />
<br />
===Ti-Au Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/89/Ti-Au-Sputtering-Films-AJA2-rev1.pdf Ti-Au Deposition Recipe and SEM Cross-Sections]<br />
<br />
===TiO<sub>2</sub> Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/1/19/TiO2_film_using_Sputter4.pdf TiO<sub>2</sub> Film's Refractive Index Spectrum, Resistivity, AFM Roughness]<br />
<br />
===TiW Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/7/78/TiW-Sputter4-4.5mT-300W-300s.pdf TiW Film's AFM Step and Roughness]<br />
===W-TiW Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/c/cc/W-TiW-Sputtering-AJA-4-Data-Recipe-RevB.pdf W-TiW Deposition Recipe]<br />
<br />
==[[Sputter 5 (AJA ATC 2200-V)]]==<br />
<br />
Please see the [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=60 SignupMonkey] page for a list of currently installed targets.<br />
<br />
=== Materials Table (Sputter 5) ===<br />
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.<br />
{| class="wikitable sortable"<br />
|-<br />
!Material!!P(mT)<br />
!Power Source!!Pow(W)!!Sub(V)!!T(C)!!Ar!!N2!!O2!!Height-Tilt!!Rate(nm/min)!!Stress(MPa)!!Rs(uOhm-cm)!!Rq(nm)!!n@633nm!!k@633nm!!LPDb/LPDa*!!Data Below!!Comment<br />
|-<br />
|Al<br />
|5<br />
|<br />
|250<br />
|0<br />
|20<br />
|45<br />
|0<br />
|0<br />
|H1-T10<br />
|2.5<br />
|22<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|No (SEM available)<br />
|Ning<br />
|-<br />
|Al2O3<br />
|1.5<br />
|DC5-SW1<br />
|150<br />
| -<br />
| -<br />
|45<br />
| -<br />
|5<br />
|H2.75-T5<br />
|5.3<br />
|?<br />
|?<br />
|?<br />
|1.641<br />
| -<br />
|?<br />
|No<br />
|Demis 2018-04-13<br />
|-<br />
|Pt<br />
|3.0<br />
|<br />
|200<br />
| -<br />
| -<br />
|45<br />
| -<br />
|<br />
|H1-T10<br />
|7.03<br />
|?<br />
|?<br />
|?<br />
|<br />
| -<br />
|?<br />
|No<br />
|Ning 2021-09-27<br />
|-<br />
|SiO2||3<br />
| ||250||120||20||45||0||2||H1.0-T10||2.32|| ||-||-||1.49||-||153/6384||No||Biljana<br />
|-<br />
|SiO2||3<br />
| ||250||120||20||45||0||4.5||H1.0-T10||2.29||-515||-||0.210||1.49|| ||138/4445||No ( AFM available)||Biljana<br />
|-<br />
|SiO2||3<br />
| ||250||120||20||45||0||6||H1.0-T10||2.32|| ||-||-||1.49||-||27/1515||Yes||Biljana<br />
|-<br />
|}<br />
''*LPD: light particle detection:''<br />
<br />
*''LPDb: light particle detection before deposition''<br />
*''LPDa: light particle detection after deposition''<br />
<br />
===SiO2 Deposition (Sputter 5)===<br />
<br />
*[https://docs.google.com/spreadsheets/d/1kzrbXdUJNf_-FjLJd-PTrbGDhGCKNNxo_JaOXkSpAF8/edit#gid=Sputter#5 SiO2 film]<br />
<br />
==[[Ion Beam Deposition (Veeco NEXUS)]]==<br />
<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AuBs1GfMrpnXcEdXanZQNko3X0lUcHhVUlNyYnVDUkE&usp=sharing IBD Calibrations Spreadsheet] - Records of historical film depositions (rates, indices), Uniformity etc.<br />
**'''All users are required to enter their calibration deps (simple test deps only)'''<br />
*[https://docs.google.com/spreadsheets/d/1y704PRxvXf8bbqb79CrISnk2t0FeojYVJIjrAcBU2_w/edit#gid=sharing Particulates in SiO2 and Ta2O5 in 2015]<br />
<br />
===SiO{{sub|2}} deposition (IBD)===<br />
<br />
==== SiO<sub>2</sub> Historical Data ====<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/8d/New_IBD_SiO2_Standard_Recipe.pdf SiO<sub>2</sub> Standard Recipe]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dFRJLUZUdXB4WFA1S1BMMWQ4WndpTWc&usp=drive_web#gid=sharing SiO<sub>2</sub> Data December 2014]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGNyV083bmpzMjZpZ0JFVWhoOUpaN3c#gid=sharing SiO<sub>2</sub> Thickness uniformity 2014]<br />
*[https://docs.google.com/spreadsheets/d/1pxQkTm274CVjzlnE3cZgE5ycgXfIk8cVCAwTg5x7Xx4/edit#gid=sharing SiO<sub>2</sub> Data-15min depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1vYSV7iGIMJsqmlxF6bAjdzuaATcDGxBvwlhb2XYJoWg/edit#gid=sharing SiO<sub>2</sub> Thickness uniformity-15 min depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1qnlny3A8jRUPU-8O1ycx9MUFmpti_pRv93rT1pXHMWM/edit#gid=1868267914=sharing SiO<sub>2</sub> Data-1hr depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/12SKWvqxDuyTgWL44wfvrA2gKDy6ihV2XWh6WJsTT9hE/edit#gid=sharing SiO<sub>2</sub> Thickness uniformity-1hr depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1KPLP68f9oC6H2C39r4_Lcd9RkjPiVnZTiz6sMYoJodc/edit#gid=1868267914=sharing SiO<sub>2</sub> Data-1hr depositions 2016]<br />
*[https://docs.google.com/spreadsheets/d/1dFI1B2WxS7oEGMPl2dlLtmiAin-6EKWSEj9hFezB4_w/edit#gid==sharing SiO<sub>2</sub> Thickness uniformity-1hr depositions 2016]<br />
<br />
====SiO<sub>2</sub> 1hr deposition properties:====<br />
<br />
*Dep.rate: ≈ 5.2 nm/min (users must calibrate this prior to critical deps)<br />
*HF e.r.~350 nm/min<br />
*Stress ≈ -390MPa (compressive)<br />
*Refractive Index: ≈ 1.494<br />
*[[http://en.wikipedia.org/wiki/Cauchy's_equation Cauchy Parameters]] (350-2000nm): <br />
**A = 1.480<br />
**B = 0.00498<br />
**C = -3.2606e-5<br />
<br />
===Si<sub>3</sub>N<sub>4</sub> deposition (IBD)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/d/d3/IBD_SiNdeposition.pdf Si<sub>3</sub>N<sub>4</sub> Standard Recipe]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDE4RldRQnA1N1ptOUlHQVc3QjNXSkE#gid=sharing Si<sub>3</sub>N<sub>4</sub> Data December 2014]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEdsbWRhYW9mbFRLem56TjFFWjRwR1E#gid=sharing Si<sub>3</sub>N<sub>4</sub> Thickness uniformity 2014]<br />
<br />
*Deposition Rate: ≈ 4.10 nm/min (users must calibrate this prior to critical deps)<br />
*HF e.r.~11nm/min<br />
*Stress ≈ -1590MPa (compressive)<br />
*Refractive Index: ≈ 1.969<br />
*[[http://en.wikipedia.org/wiki/Cauchy's_equation Cauchy Parameters]] (350-2000nm): <br />
**A = 2.000<br />
**B = 0.01974<br />
**C = 1.2478e-4<br />
<br />
===SiO<sub>x</sub>N<sub>y</sub> deposition (IBD)===<br />
These are some old (2010), initial characterizations only. A recipe improvement would be to increase the Assist O2+N2 = 60sccm total, increasing repeatability. Contact [[Demis D. John|Demis]] for more info.<br />
{|<br />
![[File:IBD SiON Index @ 623nm vs. O2 Gas Flow - v3 - wiki.jpg|alt=plot showing varying refractive index between Si3N4 and SiO2|none|thumb|250x250px|IBD SiO<sub>x</sub>N<sub>y</sub>: Refractive Index vs. O2/N2 Flow.]]<br />
![[File:IBD SiON - Dep rate vs O2 flow - wiki.png|alt=Rate varies monotonically from 53-5 Å/min.|none|thumb|Dep. Rate of IBD SiO<sub>x</sub>N<sub>y</sub> vs. Assist O<sub>2</sub> flow.]]<br />
|}<br />
<br />
===Ta{{sub|2}}O{{sub|5}} deposition (IBD)===<br />
<br />
==== Ta2O5 Historical Data (IBD) ====<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/85/IBD_Ta2O5_deposition_details.pdf Ta{{sub|2}}O{{sub|5}} Standard Recipe]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGhhUGdCR2JudkZJU3pBemR4bS1GWWc#gid=0=sharing Ta{{sub|2}}O{{sub|5}} Data December 2014]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dE5xbVFyUFZqdTdUN0JRSUNvMGFGb2c#gid=sharing Ta{{sub|2}}O{{sub|5}} Thickness uniformity 2014]<br />
<br />
*[https://docs.google.com/spreadsheets/d/1WRqzTTIX4D7Un-XqHqSB66JuSplrMiZAzGvjYFZ-Gtk/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Data December-15 min depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1BZrNtzHwWqfLhvZW4UY01CUfkObW70MxW9jdLhBcunc/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Thickness uniformity-15 min depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1saOA_9SwcPCkuW7uGgOSXhvtwrMkKJUxeS4wRE9qxQ8/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Data December-1hr depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1wXAtWbbE8dvvulJxJXkwQyejgcrz51t-HH4omTq0scs/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Thickness uniformity-1hr depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1A0bVnVgwPfj5JfAtmgNSeto2Rix8qOfiGO9mpXa433g/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Data December-1hr depositions 2016]<br />
*[https://docs.google.com/spreadsheets/d/1U7XUvluOpgD7tsciZ1pAFGiFsKJKvym6mH5hKaSt5b0/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Thickness uniformity-1hr depositions 2016]<br />
<br />
==== Ta2O5 Deposition/Film Properies (IBD) ====<br />
*Ta2O5 1hr depositions:<br />
*Deposition Rate: ≈ 7.8 nm/min (users must calibrate this prior to critical deps)<br />
*HF e.r.~2 nm/min<br />
*Stress ≈ -232MPa (compressive)<br />
*Refractive Index: ≈ 2.172<br />
*[[http://en.wikipedia.org/wiki/Cauchy's_equation Cauchy Parameters]] (350-2000nm): <br />
**A = 2.1123<br />
**B = 0.018901<br />
**C = -0.016222<br />
<br />
===TiO{{sub|2}} deposition (IBD)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/3/3b/New_IBD_TiO2_deposition.pdf TiO<sub>2</sub> Standard Recipe]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGVXVkM4dEdXaU15M09HNGhJbGUycVE#gid=sharing TiO<sub>2</sub> Data December 2014]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dF9YSW9jTDJzY19MbmVEbUQtVzJVdVE#gid=sharing TiO<sub>2</sub> Thickness uniformity 2014]<br />
<br />
*Deposition Rate: ≈ 1.29 nm/min (users must calibrate this prior to critical deps)<br />
*HF etch rate ~5.34nm/min<br />
*Stress ≈ -445MPa (compressive)<br />
*Refractive Index: ≈ 2.259<br />
*[[http://en.wikipedia.org/wiki/Cauchy's_equation Cauchy Parameters]] (350-2000nm): <br />
**A = 2.435<br />
**B = -4.9045e-4<br />
**C = 0.01309<br />
*Absorbing < ~350nm<br />
<br />
===Al<sub>2</sub>O<sub>3</sub> deposition (IBD)===<br />
<br />
*Al2O3 standard recipe: 1_Al2O3_dep<br />
<br />
*[https://docs.google.com/spreadsheets/d/1Qwxa7rtq2kGeFUQxnjGFgtdCJP4uIX_bdUcCWFvO72g/edit#gid= Al2O3 Data 2018]<br />
*[https://docs.google.com/spreadsheets/d/1rjwDQ0WJOIL7XWx2KWQ4fEPjNkr6GEmiXGmQXZnWFOI/edit#gid= Al2O3 Thickness uniformity 2018]<br />
<br />
*Deposition Rate: ≈ 2.05nm/min (users must calibrate this prior to critical deps)<br />
*HF etch rate ~167nm/min<br />
*Stress ≈ -332MPa (compressive)<br />
*Refractive Index: ≈ 1.656<br />
*[[http://en.wikipedia.org/wiki/Cauchy's_equation Cauchy Parameters]] (350-2000nm):( working on) <br />
**A =<br />
**B =<br />
**C =<br />
*Absorbing < ~350nm<br />
<br />
== Reference Recipes (Disabled Tools) ==<br />
<br />
=== [[Sputter 2 (SFI Endeavor)|<big><u>Sputter 2 (SFI Endeavor)</u></big>]] ===<br />
'''This Tool has been Disabled, and is not available for use any more! These recipes are displayed here for historical/reference purposes only.'''<br />
'''Al Deposition (Sputter 2)'''<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/0/05/20-Al-Sputtering-Film-Sputter-2.pdf Al Deposition Recipe]<br />
'''AlN<sub>x</sub> Deposition (Sputter 2)'''<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/8c/Sputter-2-AlN-Endeavor-rev1.pdf AlN<sub>x</sub> Deposition Recipe]<br />
'''Au Deposition (Sputter 2)'''<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/8a/21-Au-Sputter-film-recipes-Sputter-2.pdf Au Deposition Recipe]<br />
'''TiO<sub>2</sub> Deposition (Sputter 2)'''<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/c/c4/22-TiO2-Film-Sputter-2.pdf TiO2<sub>2</sub> Deposition Recipe]</div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=Sputtering_Recipes&diff=159252
Sputtering Recipes
2021-09-27T18:14:19Z
<p>Ningcao: /* Materials Table (Sputter 5) */</p>
<hr />
<div>{{recipes|Vacuum Deposition}}<br />
{{rl|Atomic Layer Deposition Recipes|Pt deposition (ALD)}}<br />
<br />
==[[Sputter 3 (AJA ATC 2000-F)]]==<br />
<br />
Please see the [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=20 SignupMonkey Page] for a list of currently installed targets.<br />
<br />
=== Materials Table (Sputter 3) ===<br />
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.<br />
{| class="wikitable sortable"<br />
|-<br />
!Material!!P(mT)!!Pow(W)!!Sub(W)!!T(C)!!Ar!!N2!!O2!!Height-Tilt!!Rate(nm/min)!!Stress(MPa)!!Rs(uOhm-cm)!!n@633nm!!k@633nm<br />
!Target Consumed Lower Limit!!Data Below!!Comment<br />
|-<br />
|Au<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
|Set: 200 W<br />
Read: 400 VDC<br />
|no<br />
|<br />
|-<br />
|Al2O3<br />
|3<br />
|200 (RF2)<br />
|off<br />
|20<br />
|30<br />
|<br />
|1.5<br />
|1.52"-4mm<br />
|5.32<br />
|<br />
|<br />
|1.6478<br />
|0<br />
|<br />
|no<br />
|Demis D. John<br />
|-<br />
|Co||10(5)||200||0||20||25||0||0||25-9||2.3||-||-||-||-<br />
| ||yes||Alex K<br />
|-<br />
|Cr||5||200||0||20||25||0||0||44-4||6.84||-||-||-||-<br />
| ||no||Brian<br />
|-<br />
|Cu||1.5||50(395v)||0||20||25||0||0||25-9||4.15||-||-||-||-<br />
| ||no||Ning<br />
|-<br />
|Cu||5||150(~490v)||0||20||15||0||0||0.82"-9||8||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Fe||10(5)||200||0||20||25||0||0||25-9||1.25||-||-||-||-<br />
| ||No||Alex K<br />
|-<br />
|Mo||3||200||0||20||25||0||0||44-4||13.15||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ni||5||150||0||20||25||0||0||44-4||5.23||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ni||5||150||0||20||25||0||0||25-9||1.82||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ni||5||75||0||20||25||0||0||44-4||2.50||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ni||3||200||0||20||25||0||0||44-4||9.4||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ni||1.5||50(399v)||0||20||25||0||0||25-9||0.96||-||-||-||-<br />
| ||no||Ning<br />
|-<br />
|Pt||3||50||0||20||25||0||0||0.82"-9||2.9||-||-||-||-<br />
| ||no||Ning<br />
|-<br />
|Si||8||250||0||25||25||0||0||15-3||1.4||-||-||-||-<br />
| ||no||Gerhard - ramp 2W/s - 3% Unif 4" wafer<br />
|-<br />
|SiN||3||200||10||20||25||3||0||25-9||1.56||-||-||1.992||-<br />
| ||yes||Brian<br />
|-<br />
|SiN||3||250||10||20||25||2.5||0||25-9||2.1||-||-||2.06||-<br />
| ||yes||Brian<br />
|-<br />
|SiO2||3||200||10||20||25||0||3||25-9||3.68||-||-||1.447||-<br />
| ||yes||Brian<br />
|-<br />
|SiO2||3||200||10||20||25||0||5||45-3||2.60||-||-||1.471||-<br />
| ||yes||Brian<br />
|-<br />
|SiO2||3||250||10||20||25||0||2.5||25-9||4.3||-||-||1.485||-<br />
| ||yes||Brian<br />
|-<br />
|Ta||5||150||0||20||25||0||0||44-4||9.47||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ta||5||75||0||20||25||0||0||44-4||5.03||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ti||3||100||0||20||25||0||0||25-9||1.34||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|SampleClean-NativeSiO2||10||0||18||20||25||0||0||44-4||-||-||-||-||-<br />
| ||yes||150Volts 5 min<br />
|-<br />
|}<br />
<br />
===Height Conversion for Older Recipes===<br />
Old recipes using the manual Height setting in millimeters can be converted to the new programmatic settings in inches as follows:<br />
{| class="wikitable"<br />
!Old (mm)<br />
!New (inches)<br />
!Typical Gun Tilt (mm)<br />
|-<br />
|15<br />
|<br />
|<br />
|-<br />
|25<br />
|0.82<br />
|9<br />
|-<br />
|44<br />
|1.52<br />
|4<br />
|}<br />
Interpolation plot [[:File:Sputter 3 - height conversion v1.PNG|can be found here.]]<br />
<br />
===Fe and Co Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/1/15/Fe_and_Co_Films_using_Sputter-3.pdf Fe and Co Deposition Recipe]<br />
<br />
===Cu Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/5/5e/Cu_Film_using_Sputter-3.pdf Cu Deposition Recipe]<br />
<br />
===Mo Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/7/7f/46-Mo_Film_using_Sputter3.pdf Mo Deposition Recipe]<br />
<br />
===Ni and Ta Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/b/b6/24-Ni_and_Ta_Films_using_Sputter-3.pdf Ni and Ta Deposition Recipe]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/9/93/Ni_Sputtering_Film_using_Sputter_3-a.pdf Ni Sputtering Film Recipe-3mT-200W]<br />
<br />
===SiO2 Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/e/ef/SiO2-AJA-1-Reactive-Sputter-Uniformity-rev-1.pdf SiO2 Uniformity Data]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/b/b2/SiO2-AJA-1-Reactive-Sputter-Power-Flow-AFM-Roughness-rev1.pdf SiO2 Flow and Bias Variations Including AFM Data]<br />
<br />
===SiN Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/f/fb/SiN-AJA-1-Reactive-Sputtering-Power-Flow-AFM-Rate-Index-rev1.pdf SiN Flow and RF Variations Including AFM Data]<br />
<br />
===Ti Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/3/3b/Ti_Sputtering_Film_using_Sputter_3.pdf Ti Sputtering Film Recipe-3mT-100W]<br />
<br />
==[[Sputter 4 (AJA ATC 2200-V)]]==<br />
<br />
Please see [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=21 the SignupMonkey page] for a list of currently installed targets.<br />
<br />
=== Materials Table (Sputter 4) ===<br />
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended. <br />
{| class="wikitable sortable"<br />
|-<br />
!Material!!P(mT)<br />
!Power Source!!Pow(W)!!Sub(W)!!T(C)!!Ar!!N2!!O2!!Height-Tilt!!Rate(nm/min)!!Stress(MPa)!!Rs(uOhm-cm)!!n@633nm!!k@633nm!!Data Below!!Comment<br />
|-<br />
|Al||5<br />
| ||200||0||20||45||0||0||H2.75-T5||4.4||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|Al2O3<br />
|3<br />
|RF4-Sw1<br />
|200<br />
|0<br />
|20<br />
|30<br />
|0<br />
|1.5<br />
|H2.75-T5<br />
|5.1<br />
|<br />
|<br />
|1.64202<br />
|0<br />
|partial<br />
|Demis D. John<br />
|-<br />
|Au||5<br />
| ||200||0||20||45||0||0||H1-T10||17.7||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|Au||10<br />
| ||300||0||20||45||0||0||H2.75-T5||45.4||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|Cu<br />
|5<br />
|<br />
|150<br />
|0<br />
|20<br />
|30<br />
|0<br />
|0<br />
|H0.82-T9<br />
|6.7<br />
|<br />
|<br />
|<br />
|<br />
|No (SEM available)<br />
|Ning Cao<br />
|-<br />
|Nb||4<br />
| ||250||0||20||30||0||0||H2.00-T7||7.5||-||-||-||-||No||<br />
|-<br />
|Pt||5<br />
| ||200||0||20||45||0||0||H2.75-T5||7.4||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|Pt||3<br />
| ||50(439V)||0||20||45||0||0||H2.75-T5||3.9||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|Ru<br />
|3<br />
|<br />
|200<br />
|<br />
|<br />
|45<br />
|<br />
|<br />
|H2.75-T4<br />
|~10<br />
|<br />
|<br />
|<br />
|<br />
|Yes<br />
|Ning Cao<br />
|-<br />
|Ti||10<br />
| ||200||0||20||45||0||0||H2.75-T5||2.3||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|TiN||3<br />
| ||150||110V||20||48.25||1.75||0||H2.5-T5||2||-||60||-||-||No||<br />
|-<br />
|TiO<sub>2</sub>||3<br />
| ||250(RF:450V)||0||20||45||0||3||H2.75-T5||4.3||-|| ||-||-||Yes||Ning Cao<br />
|-<br />
|TiW||4.5<br />
| ||200||0||20||45||0||0||H1-T10||4.7||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|TiW||4.5<br />
| ||300||0||75||45||0||0||H2.75-T5||9.5||-150 to 150||60||-||-||Yes||10%Ti by Wt<br />
|-<br />
|W||3<br />
| ||300||0||50||45||0||0||H2.75-T5||11.5||-150 to 150||11||-||-||Yes||Jeremy Watcher<br />
|-<br />
<br />
|}<br />
<br />
===Au Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/0/01/Au-Sputter4-5mT-200W-120s.pdf Au Film's AFM Step and Roughness]<br />
<br />
===Al Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/1/17/Al-Sputter4-5mT-200W-30m.pdf Al Film SEM Profile]<br />
<br />
===Al2O3 Deposition (Sputter 4)===<br />
<br />
*Rate: 5.134 nm/min<br />
*[https://en.wikipedia.org/wiki/Cauchy%27s_equation Cauchy] Refractive Index Params (fit from λ=190-1700nm, indicating transparency over this range)<br />
**A = 1.626<br />
**B = 5.980E-3<br />
**C = 1.622E-4<br />
<br />
===Pt Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/a/ab/Pt-Sputter4.pdf Pt Film's AFM Step and Roughness]<br />
<br />
=== Ru Deposition (Sputter 4) ===<br />
* [https://wiki.nanotech.ucsb.edu/w/images/f/f6/SiO2_Etch%2C_Ru_HardMask_-_Fluorine_ICP_Etch_Process_-_Ning_Cao_2019-06.pdf Ruthenium Hardmask for SiO2 Etching - Full Process Traveler] by Ning Cao<br />
** Deposition Rate ~10nm/min<br />
** See [[ICP Etching Recipes#SiO2 Etching|Fluorine-ICP > SiO2 Etching]] page for more info.<br />
<br />
===Ti-Au Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/89/Ti-Au-Sputtering-Films-AJA2-rev1.pdf Ti-Au Deposition Recipe and SEM Cross-Sections]<br />
<br />
===TiO<sub>2</sub> Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/1/19/TiO2_film_using_Sputter4.pdf TiO<sub>2</sub> Film's Refractive Index Spectrum, Resistivity, AFM Roughness]<br />
<br />
===TiW Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/7/78/TiW-Sputter4-4.5mT-300W-300s.pdf TiW Film's AFM Step and Roughness]<br />
===W-TiW Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/c/cc/W-TiW-Sputtering-AJA-4-Data-Recipe-RevB.pdf W-TiW Deposition Recipe]<br />
<br />
==[[Sputter 5 (AJA ATC 2200-V)]]==<br />
<br />
Please see the [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=60 SignupMonkey] page for a list of currently installed targets.<br />
<br />
=== Materials Table (Sputter 5) ===<br />
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.<br />
{| class="wikitable sortable"<br />
|-<br />
!Material!!P(mT)<br />
!Power Source!!Pow(W)!!Sub(V)!!T(C)!!Ar!!N2!!O2!!Height-Tilt!!Rate(nm/min)!!Stress(MPa)!!Rs(uOhm-cm)!!Rq(nm)!!n@633nm!!k@633nm!!LPDb/LPDa*!!Data Below!!Comment<br />
|-<br />
|Al<br />
|5<br />
|<br />
|250<br />
|0<br />
|20<br />
|45<br />
|0<br />
|0<br />
|H1-T10<br />
|2.5<br />
|22<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|No (SEM available)<br />
|Ning<br />
|-<br />
|Al2O3<br />
|1.5<br />
|DC5-SW1<br />
|150<br />
| -<br />
| -<br />
|45<br />
| -<br />
|5<br />
|H2.75-T5<br />
|5.3<br />
|?<br />
|?<br />
|?<br />
|1.641<br />
| -<br />
|?<br />
|No<br />
|Demis 2018-04-13<br />
|-<br />
|Pt<br />
|3.0<br />
|DC5-SW1<br />
|200<br />
| -<br />
| -<br />
|45<br />
| -<br />
|5<br />
|H10-Z1<br />
|7.03<br />
|?<br />
|?<br />
|?<br />
|<br />
| -<br />
|?<br />
|No<br />
|Ning 2021-09-27<br />
|-<br />
|SiO2||3<br />
| ||250||120||20||45||0||2||H1.0-T10||2.32|| ||-||-||1.49||-||153/6384||No||Biljana<br />
|-<br />
|SiO2||3<br />
| ||250||120||20||45||0||4.5||H1.0-T10||2.29||-515||-||0.210||1.49|| ||138/4445||No ( AFM available)||Biljana<br />
|-<br />
|SiO2||3<br />
| ||250||120||20||45||0||6||H1.0-T10||2.32|| ||-||-||1.49||-||27/1515||Yes||Biljana<br />
|-<br />
|}<br />
''*LPD: light particle detection:''<br />
<br />
*''LPDb: light particle detection before deposition''<br />
*''LPDa: light particle detection after deposition''<br />
<br />
===SiO2 Deposition (Sputter 5)===<br />
<br />
*[https://docs.google.com/spreadsheets/d/1kzrbXdUJNf_-FjLJd-PTrbGDhGCKNNxo_JaOXkSpAF8/edit#gid=Sputter#5 SiO2 film]<br />
<br />
==[[Ion Beam Deposition (Veeco NEXUS)]]==<br />
<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AuBs1GfMrpnXcEdXanZQNko3X0lUcHhVUlNyYnVDUkE&usp=sharing IBD Calibrations Spreadsheet] - Records of historical film depositions (rates, indices), Uniformity etc.<br />
**'''All users are required to enter their calibration deps (simple test deps only)'''<br />
*[https://docs.google.com/spreadsheets/d/1y704PRxvXf8bbqb79CrISnk2t0FeojYVJIjrAcBU2_w/edit#gid=sharing Particulates in SiO2 and Ta2O5 in 2015]<br />
<br />
===SiO{{sub|2}} deposition (IBD)===<br />
<br />
==== SiO<sub>2</sub> Historical Data ====<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/8d/New_IBD_SiO2_Standard_Recipe.pdf SiO<sub>2</sub> Standard Recipe]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dFRJLUZUdXB4WFA1S1BMMWQ4WndpTWc&usp=drive_web#gid=sharing SiO<sub>2</sub> Data December 2014]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGNyV083bmpzMjZpZ0JFVWhoOUpaN3c#gid=sharing SiO<sub>2</sub> Thickness uniformity 2014]<br />
*[https://docs.google.com/spreadsheets/d/1pxQkTm274CVjzlnE3cZgE5ycgXfIk8cVCAwTg5x7Xx4/edit#gid=sharing SiO<sub>2</sub> Data-15min depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1vYSV7iGIMJsqmlxF6bAjdzuaATcDGxBvwlhb2XYJoWg/edit#gid=sharing SiO<sub>2</sub> Thickness uniformity-15 min depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1qnlny3A8jRUPU-8O1ycx9MUFmpti_pRv93rT1pXHMWM/edit#gid=1868267914=sharing SiO<sub>2</sub> Data-1hr depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/12SKWvqxDuyTgWL44wfvrA2gKDy6ihV2XWh6WJsTT9hE/edit#gid=sharing SiO<sub>2</sub> Thickness uniformity-1hr depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1KPLP68f9oC6H2C39r4_Lcd9RkjPiVnZTiz6sMYoJodc/edit#gid=1868267914=sharing SiO<sub>2</sub> Data-1hr depositions 2016]<br />
*[https://docs.google.com/spreadsheets/d/1dFI1B2WxS7oEGMPl2dlLtmiAin-6EKWSEj9hFezB4_w/edit#gid==sharing SiO<sub>2</sub> Thickness uniformity-1hr depositions 2016]<br />
<br />
====SiO<sub>2</sub> 1hr deposition properties:====<br />
<br />
*Dep.rate: ≈ 5.2 nm/min (users must calibrate this prior to critical deps)<br />
*HF e.r.~350 nm/min<br />
*Stress ≈ -390MPa (compressive)<br />
*Refractive Index: ≈ 1.494<br />
*[[http://en.wikipedia.org/wiki/Cauchy's_equation Cauchy Parameters]] (350-2000nm): <br />
**A = 1.480<br />
**B = 0.00498<br />
**C = -3.2606e-5<br />
<br />
===Si<sub>3</sub>N<sub>4</sub> deposition (IBD)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/d/d3/IBD_SiNdeposition.pdf Si<sub>3</sub>N<sub>4</sub> Standard Recipe]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDE4RldRQnA1N1ptOUlHQVc3QjNXSkE#gid=sharing Si<sub>3</sub>N<sub>4</sub> Data December 2014]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEdsbWRhYW9mbFRLem56TjFFWjRwR1E#gid=sharing Si<sub>3</sub>N<sub>4</sub> Thickness uniformity 2014]<br />
<br />
*Deposition Rate: ≈ 4.10 nm/min (users must calibrate this prior to critical deps)<br />
*HF e.r.~11nm/min<br />
*Stress ≈ -1590MPa (compressive)<br />
*Refractive Index: ≈ 1.969<br />
*[[http://en.wikipedia.org/wiki/Cauchy's_equation Cauchy Parameters]] (350-2000nm): <br />
**A = 2.000<br />
**B = 0.01974<br />
**C = 1.2478e-4<br />
<br />
===SiO<sub>x</sub>N<sub>y</sub> deposition (IBD)===<br />
These are some old (2010), initial characterizations only. A recipe improvement would be to increase the Assist O2+N2 = 60sccm total, increasing repeatability. Contact [[Demis D. John|Demis]] for more info.<br />
{|<br />
![[File:IBD SiON Index @ 623nm vs. O2 Gas Flow - v3 - wiki.jpg|alt=plot showing varying refractive index between Si3N4 and SiO2|none|thumb|250x250px|IBD SiO<sub>x</sub>N<sub>y</sub>: Refractive Index vs. O2/N2 Flow.]]<br />
![[File:IBD SiON - Dep rate vs O2 flow - wiki.png|alt=Rate varies monotonically from 53-5 Å/min.|none|thumb|Dep. Rate of IBD SiO<sub>x</sub>N<sub>y</sub> vs. Assist O<sub>2</sub> flow.]]<br />
|}<br />
<br />
===Ta{{sub|2}}O{{sub|5}} deposition (IBD)===<br />
<br />
==== Ta2O5 Historical Data (IBD) ====<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/85/IBD_Ta2O5_deposition_details.pdf Ta{{sub|2}}O{{sub|5}} Standard Recipe]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGhhUGdCR2JudkZJU3pBemR4bS1GWWc#gid=0=sharing Ta{{sub|2}}O{{sub|5}} Data December 2014]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dE5xbVFyUFZqdTdUN0JRSUNvMGFGb2c#gid=sharing Ta{{sub|2}}O{{sub|5}} Thickness uniformity 2014]<br />
<br />
*[https://docs.google.com/spreadsheets/d/1WRqzTTIX4D7Un-XqHqSB66JuSplrMiZAzGvjYFZ-Gtk/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Data December-15 min depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1BZrNtzHwWqfLhvZW4UY01CUfkObW70MxW9jdLhBcunc/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Thickness uniformity-15 min depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1saOA_9SwcPCkuW7uGgOSXhvtwrMkKJUxeS4wRE9qxQ8/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Data December-1hr depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1wXAtWbbE8dvvulJxJXkwQyejgcrz51t-HH4omTq0scs/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Thickness uniformity-1hr depositions 2015]<br />
*[https://docs.google.com/spreadsheets/d/1A0bVnVgwPfj5JfAtmgNSeto2Rix8qOfiGO9mpXa433g/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Data December-1hr depositions 2016]<br />
*[https://docs.google.com/spreadsheets/d/1U7XUvluOpgD7tsciZ1pAFGiFsKJKvym6mH5hKaSt5b0/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Thickness uniformity-1hr depositions 2016]<br />
<br />
==== Ta2O5 Deposition/Film Properies (IBD) ====<br />
*Ta2O5 1hr depositions:<br />
*Deposition Rate: ≈ 7.8 nm/min (users must calibrate this prior to critical deps)<br />
*HF e.r.~2 nm/min<br />
*Stress ≈ -232MPa (compressive)<br />
*Refractive Index: ≈ 2.172<br />
*[[http://en.wikipedia.org/wiki/Cauchy's_equation Cauchy Parameters]] (350-2000nm): <br />
**A = 2.1123<br />
**B = 0.018901<br />
**C = -0.016222<br />
<br />
===TiO{{sub|2}} deposition (IBD)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/3/3b/New_IBD_TiO2_deposition.pdf TiO<sub>2</sub> Standard Recipe]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGVXVkM4dEdXaU15M09HNGhJbGUycVE#gid=sharing TiO<sub>2</sub> Data December 2014]<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dF9YSW9jTDJzY19MbmVEbUQtVzJVdVE#gid=sharing TiO<sub>2</sub> Thickness uniformity 2014]<br />
<br />
*Deposition Rate: ≈ 1.29 nm/min (users must calibrate this prior to critical deps)<br />
*HF etch rate ~5.34nm/min<br />
*Stress ≈ -445MPa (compressive)<br />
*Refractive Index: ≈ 2.259<br />
*[[http://en.wikipedia.org/wiki/Cauchy's_equation Cauchy Parameters]] (350-2000nm): <br />
**A = 2.435<br />
**B = -4.9045e-4<br />
**C = 0.01309<br />
*Absorbing < ~350nm<br />
<br />
===Al<sub>2</sub>O<sub>3</sub> deposition (IBD)===<br />
<br />
*Al2O3 standard recipe: 1_Al2O3_dep<br />
<br />
*[https://docs.google.com/spreadsheets/d/1Qwxa7rtq2kGeFUQxnjGFgtdCJP4uIX_bdUcCWFvO72g/edit#gid= Al2O3 Data 2018]<br />
*[https://docs.google.com/spreadsheets/d/1rjwDQ0WJOIL7XWx2KWQ4fEPjNkr6GEmiXGmQXZnWFOI/edit#gid= Al2O3 Thickness uniformity 2018]<br />
<br />
*Deposition Rate: ≈ 2.05nm/min (users must calibrate this prior to critical deps)<br />
*HF etch rate ~167nm/min<br />
*Stress ≈ -332MPa (compressive)<br />
*Refractive Index: ≈ 1.656<br />
*[[http://en.wikipedia.org/wiki/Cauchy's_equation Cauchy Parameters]] (350-2000nm):( working on) <br />
**A =<br />
**B =<br />
**C =<br />
*Absorbing < ~350nm<br />
<br />
== Reference Recipes (Disabled Tools) ==<br />
<br />
=== [[Sputter 2 (SFI Endeavor)|<big><u>Sputter 2 (SFI Endeavor)</u></big>]] ===<br />
'''This Tool has been Disabled, and is not available for use any more! These recipes are displayed here for historical/reference purposes only.'''<br />
'''Al Deposition (Sputter 2)'''<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/0/05/20-Al-Sputtering-Film-Sputter-2.pdf Al Deposition Recipe]<br />
'''AlN<sub>x</sub> Deposition (Sputter 2)'''<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/8c/Sputter-2-AlN-Endeavor-rev1.pdf AlN<sub>x</sub> Deposition Recipe]<br />
'''Au Deposition (Sputter 2)'''<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/8a/21-Au-Sputter-film-recipes-Sputter-2.pdf Au Deposition Recipe]<br />
'''TiO<sub>2</sub> Deposition (Sputter 2)'''<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/c/c4/22-TiO2-Film-Sputter-2.pdf TiO2<sub>2</sub> Deposition Recipe]</div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=Test_Data_of_etching_SiO2_with_CHF3/CF4&diff=159061
Test Data of etching SiO2 with CHF3/CF4
2021-08-11T01:46:27Z
<p>Ningcao: add a SEM pic</p>
<hr />
<div>{| class="wikitable"<br />
| colspan="5" |ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec<br />
|<br />
|-<br />
|Date<br />
|Sample#<br />
|Etch Rate (nm/min)<br />
|Etch Selectivity (SiO2/PR)<br />
|Averaged Sidewall Angle (<sup>o</sup>)<br />
|SEM Images<br />
|-<br />
|10/5/2018<br />
|SiO2#02<br />
|160<br />
|1.2<br />
|82.1<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/1/13/SiO2_Etch_using_ICP2-no_O2.pdf]<br />
|-<br />
|1/28/2019<br />
|I21901<br />
|146<br />
|1.23<br />
|<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/f9/SiO2_Etch_using_ICP2-no_O2-a.pdf]<br />
|-<br />
|3/6/2019<br />
|I21904<br />
|151<br />
|1.23<br />
|85.6<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/8/87/SiO2_Etch_using_ICP2_no_O2-3-06-2019.pdf]<br />
|-<br />
|7/18/2019<br />
|I21905<br />
|162<br />
|1.37<br />
|<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/2/23/I2190506.pdf]<br />
|-<br />
|1/16/2020<br />
|I22001<br />
|149<br />
|1.21<br />
|<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/I2200122.pdf]<br />
|-<br />
|8/9/2020<br />
|I22002<br />
|102<br />
|0.86<br />
|caused by air leaking to CHF3 channel<br />
|[https://wiki.nanotech.ucsb.edu/w/images/d/d4/I2200203.pdf]<br />
|-<br />
|1/7/2021<br />
|I22101<br />
|144<br />
|1.20<br />
|<br />
|[https://wiki.nanotech.ucsb.edu/w/images/0/0c/I2210102.pdf]<br />
|-<br />
|5/19/2021<br />
|I22102<br />
|163<br />
|1.11<br />
|Etch time=130 sec<br />
|[https://wiki.nanotech.ucsb.edu/w/images/4/4c/I2210214.pdf]<br />
|-<br />
|7/21/2021<br />
|I22103<br />
|134<br />
|1.09<br />
|Investigating reports of low etch rate<br />
|[https://wiki.nanotech.ucsb.edu/w/images/c/c3/I2210308.pdf]<br />
|-<br />
|8/9/2021<br />
|I22104<br />
|147<br />
|1.06<br />
|Before etching diamond sample for 1 hour using Cl2/Ar<br />
|[https://wiki.nanotech.ucsb.edu/w/images/2/28/I2210411.pdf]<br />
|-<br />
|8/9/2021<br />
|I22105<br />
|140<br />
|0.97<br />
|After etching diamond sample for 1 hour using Cl2/Ar<br />
|[https://wiki.nanotech.ucsb.edu/w/images/2/26/I2210508.pdf]<br />
|}</div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=File:I2210411.pdf&diff=159060
File:I2210411.pdf
2021-08-11T01:45:26Z
<p>Ningcao: </p>
<hr />
<div></div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=Test_Data_of_etching_SiO2_with_CHF3/CF4&diff=159059
Test Data of etching SiO2 with CHF3/CF4
2021-08-11T01:40:40Z
<p>Ningcao: add a data poing</p>
<hr />
<div>{| class="wikitable"<br />
| colspan="5" |ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec<br />
|<br />
|-<br />
|Date<br />
|Sample#<br />
|Etch Rate (nm/min)<br />
|Etch Selectivity (SiO2/PR)<br />
|Averaged Sidewall Angle (<sup>o</sup>)<br />
|SEM Images<br />
|-<br />
|10/5/2018<br />
|SiO2#02<br />
|160<br />
|1.2<br />
|82.1<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/1/13/SiO2_Etch_using_ICP2-no_O2.pdf]<br />
|-<br />
|1/28/2019<br />
|I21901<br />
|146<br />
|1.23<br />
|<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/f9/SiO2_Etch_using_ICP2-no_O2-a.pdf]<br />
|-<br />
|3/6/2019<br />
|I21904<br />
|151<br />
|1.23<br />
|85.6<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/8/87/SiO2_Etch_using_ICP2_no_O2-3-06-2019.pdf]<br />
|-<br />
|7/18/2019<br />
|I21905<br />
|162<br />
|1.37<br />
|<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/2/23/I2190506.pdf]<br />
|-<br />
|1/16/2020<br />
|I22001<br />
|149<br />
|1.21<br />
|<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/I2200122.pdf]<br />
|-<br />
|8/9/2020<br />
|I22002<br />
|102<br />
|0.86<br />
|caused by air leaking to CHF3 channel<br />
|[https://wiki.nanotech.ucsb.edu/w/images/d/d4/I2200203.pdf]<br />
|-<br />
|1/7/2021<br />
|I22101<br />
|144<br />
|1.20<br />
|<br />
|[https://wiki.nanotech.ucsb.edu/w/images/0/0c/I2210102.pdf]<br />
|-<br />
|5/19/2021<br />
|I22102<br />
|163<br />
|1.11<br />
|Etch time=130 sec<br />
|[https://wiki.nanotech.ucsb.edu/w/images/4/4c/I2210214.pdf]<br />
|-<br />
|7/21/2021<br />
|I22103<br />
|134<br />
|1.09<br />
|Investigating reports of low etch rate<br />
|[https://wiki.nanotech.ucsb.edu/w/images/c/c3/I2210308.pdf]<br />
|-<br />
|8/9/2021<br />
|I22104<br />
|147<br />
|1.06<br />
|Before etching diamond sample for 1 hour using Cl2/Ar<br />
|<br />
|-<br />
|8/9/2021<br />
|I22105<br />
|140<br />
|0.97<br />
|After etching diamond sample for 1 hour using Cl2/Ar<br />
|[https://wiki.nanotech.ucsb.edu/w/images/2/26/I2210508.pdf]<br />
|}</div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=Test_Data_of_etching_SiO2_with_CHF3/CF4&diff=159056
Test Data of etching SiO2 with CHF3/CF4
2021-08-10T02:30:13Z
<p>Ningcao: add a SEM</p>
<hr />
<div>{| class="wikitable"<br />
| colspan="5" |ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec<br />
|<br />
|-<br />
|Date<br />
|Sample#<br />
|Etch Rate (nm/min)<br />
|Etch Selectivity (SiO2/PR)<br />
|Averaged Sidewall Angle (<sup>o</sup>)<br />
|SEM Images<br />
|-<br />
|10/5/2018<br />
|SiO2#02<br />
|160<br />
|1.2<br />
|82.1<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/1/13/SiO2_Etch_using_ICP2-no_O2.pdf]<br />
|-<br />
|1/28/2019<br />
|I21901<br />
|146<br />
|1.23<br />
|<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/f9/SiO2_Etch_using_ICP2-no_O2-a.pdf]<br />
|-<br />
|3/6/2019<br />
|I21904<br />
|151<br />
|1.23<br />
|85.6<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/8/87/SiO2_Etch_using_ICP2_no_O2-3-06-2019.pdf]<br />
|-<br />
|7/18/2019<br />
|I21905<br />
|162<br />
|1.37<br />
|<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/2/23/I2190506.pdf]<br />
|-<br />
|1/16/2020<br />
|I22001<br />
|149<br />
|1.21<br />
|<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/I2200122.pdf]<br />
|-<br />
|8/9/2020<br />
|I22002<br />
|102<br />
|0.86<br />
|caused by air leaking to CHF3 channel<br />
|[https://wiki.nanotech.ucsb.edu/w/images/d/d4/I2200203.pdf]<br />
|-<br />
|1/7/2021<br />
|I22101<br />
|144<br />
|1.20<br />
|<br />
|[https://wiki.nanotech.ucsb.edu/w/images/0/0c/I2210102.pdf]<br />
|-<br />
|5/19/2021<br />
|I22102<br />
|163<br />
|1.11<br />
|Etch time=130 sec<br />
|[https://wiki.nanotech.ucsb.edu/w/images/4/4c/I2210214.pdf]<br />
|-<br />
|7/21/2021<br />
|I22103<br />
|134<br />
|1.09<br />
|Investigating reports of low etch rate<br />
|[https://wiki.nanotech.ucsb.edu/w/images/c/c3/I2210308.pdf]<br />
|-<br />
|8/9/2021<br />
|I22105<br />
|140<br />
|0.97<br />
|After etching diamond sample for 1 hour using Cl2/Ar<br />
|[https://wiki.nanotech.ucsb.edu/w/images/2/26/I2210508.pdf]<br />
|}</div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=Test_Data_of_etching_SiO2_with_CHF3/CF4&diff=159055
Test Data of etching SiO2 with CHF3/CF4
2021-08-10T02:28:58Z
<p>Ningcao: </p>
<hr />
<div>{| class="wikitable"<br />
| colspan="5" |ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec<br />
|<br />
|-<br />
|Date<br />
|Sample#<br />
|Etch Rate (nm/min)<br />
|Etch Selectivity (SiO2/PR)<br />
|Averaged Sidewall Angle (<sup>o</sup>)<br />
|SEM Images<br />
|-<br />
|10/5/2018<br />
|SiO2#02<br />
|160<br />
|1.2<br />
|82.1<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/1/13/SiO2_Etch_using_ICP2-no_O2.pdf]<br />
|-<br />
|1/28/2019<br />
|I21901<br />
|146<br />
|1.23<br />
|<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/f9/SiO2_Etch_using_ICP2-no_O2-a.pdf]<br />
|-<br />
|3/6/2019<br />
|I21904<br />
|151<br />
|1.23<br />
|85.6<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/8/87/SiO2_Etch_using_ICP2_no_O2-3-06-2019.pdf]<br />
|-<br />
|7/18/2019<br />
|I21905<br />
|162<br />
|1.37<br />
|<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/2/23/I2190506.pdf]<br />
|-<br />
|1/16/2020<br />
|I22001<br />
|149<br />
|1.21<br />
|<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/I2200122.pdf]<br />
|-<br />
|8/9/2020<br />
|I22002<br />
|102<br />
|0.86<br />
|caused by air leaking to CHF3 channel<br />
|[https://wiki.nanotech.ucsb.edu/w/images/d/d4/I2200203.pdf]<br />
|-<br />
|1/7/2021<br />
|I22101<br />
|144<br />
|1.20<br />
|<br />
|[https://wiki.nanotech.ucsb.edu/w/images/0/0c/I2210102.pdf]<br />
|-<br />
|5/19/2021<br />
|I22102<br />
|163<br />
|1.11<br />
|Etch time=130 sec<br />
|[https://wiki.nanotech.ucsb.edu/w/images/4/4c/I2210214.pdf]<br />
|-<br />
|7/21/2021<br />
|I22103<br />
|134<br />
|1.09<br />
|Investigating reports of low etch rate<br />
|[https://wiki.nanotech.ucsb.edu/w/images/c/c3/I2210308.pdf]<br />
|-<br />
|8/9/2021<br />
|I22105<br />
|140<br />
|0.97<br />
|After etching diamond sample for 1 hour using Cl2/Ar<br />
|<br />
|}</div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=File:I2210508.pdf&diff=159054
File:I2210508.pdf
2021-08-10T02:24:04Z
<p>Ningcao: </p>
<hr />
<div></div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=Test_Data_of_etching_SiO2_with_CHF3/CF4&diff=159053
Test Data of etching SiO2 with CHF3/CF4
2021-08-10T02:19:22Z
<p>Ningcao: save a data point</p>
<hr />
<div>{| class="wikitable"<br />
| colspan="5" |ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec<br />
|<br />
|-<br />
|Date<br />
|Sample#<br />
|Etch Rate (nm/min)<br />
|Etch Selectivity (SiO2/PR)<br />
|Averaged Sidewall Angle (<sup>o</sup>)<br />
|SEM Images<br />
|-<br />
|10/5/2018<br />
|SiO2#02<br />
|160<br />
|1.2<br />
|82.1<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/1/13/SiO2_Etch_using_ICP2-no_O2.pdf]<br />
|-<br />
|1/28/2019<br />
|I21901<br />
|146<br />
|1.23<br />
|<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/f9/SiO2_Etch_using_ICP2-no_O2-a.pdf]<br />
|-<br />
|3/6/2019<br />
|I21904<br />
|151<br />
|1.23<br />
|85.6<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/8/87/SiO2_Etch_using_ICP2_no_O2-3-06-2019.pdf]<br />
|-<br />
|7/18/2019<br />
|I21905<br />
|162<br />
|1.37<br />
|<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/2/23/I2190506.pdf]<br />
|-<br />
|1/16/2020<br />
|I22001<br />
|149<br />
|1.21<br />
|<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/I2200122.pdf]<br />
|-<br />
|8/9/2020<br />
|I22002<br />
|102<br />
|0.86<br />
|caused by air leaking to CHF3 channel<br />
|[https://wiki.nanotech.ucsb.edu/w/images/d/d4/I2200203.pdf]<br />
|-<br />
|1/7/2021<br />
|I22101<br />
|144<br />
|1.20<br />
|<br />
|[https://wiki.nanotech.ucsb.edu/w/images/0/0c/I2210102.pdf]<br />
|-<br />
|5/19/2021<br />
|I22102<br />
|163<br />
|1.11<br />
|Etch time=130 sec<br />
|[https://wiki.nanotech.ucsb.edu/w/images/4/4c/I2210214.pdf]<br />
|-<br />
|7/21/2021<br />
|I22103<br />
|134<br />
|1.09<br />
|Investigating reports of low etch rate<br />
|[https://wiki.nanotech.ucsb.edu/w/images/c/c3/I2210308.pdf]<br />
|-<br />
|8/9/21<br />
|I22105<br />
|140<br />
|0.97<br />
|After etching diamond sample for 1 hour using Cl2/Ar<br />
|<br />
|}</div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=Test_Data_of_etching_SiO2_with_CHF3/CF4&diff=159037
Test Data of etching SiO2 with CHF3/CF4
2021-07-23T01:28:59Z
<p>Ningcao: adding a SEM pic</p>
<hr />
<div>{| class="wikitable"<br />
| colspan="5" |ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec<br />
|<br />
|-<br />
|Date<br />
|Sample#<br />
|Etch Rate (nm/min)<br />
|Etch Selectivity (SiO2/PR)<br />
|Averaged Sidewall Angle (<sup>o</sup>)<br />
|SEM Images<br />
|-<br />
|10/5/2018<br />
|SiO2#02<br />
|160<br />
|1.2<br />
|82.1<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/1/13/SiO2_Etch_using_ICP2-no_O2.pdf]<br />
|-<br />
|1/28/2019<br />
|I21901<br />
|146<br />
|1.23<br />
|<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/f9/SiO2_Etch_using_ICP2-no_O2-a.pdf]<br />
|-<br />
|3/6/2019<br />
|I21904<br />
|151<br />
|1.23<br />
|85.6<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/8/87/SiO2_Etch_using_ICP2_no_O2-3-06-2019.pdf]<br />
|-<br />
|7/18/2019<br />
|I21905<br />
|162<br />
|1.37<br />
|<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/2/23/I2190506.pdf]<br />
|-<br />
|1/16/2020<br />
|I22001<br />
|149<br />
|1.21<br />
|<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/I2200122.pdf]<br />
|-<br />
|8/9/2020<br />
|I22002<br />
|102<br />
|0.86<br />
|caused by air leaking to CHF3 channel<br />
|[https://wiki.nanotech.ucsb.edu/w/images/d/d4/I2200203.pdf]<br />
|-<br />
|1/7/2021<br />
|I22101<br />
|144<br />
|1.20<br />
|<br />
|[https://wiki.nanotech.ucsb.edu/w/images/0/0c/I2210102.pdf]<br />
|-<br />
|5/19/2021<br />
|I22102<br />
|163<br />
|1.11<br />
|Etch time=130 sec<br />
|[https://wiki.nanotech.ucsb.edu/w/images/4/4c/I2210214.pdf]<br />
|-<br />
|7/22/2021<br />
|I22103<br />
|134<br />
|1.09<br />
|<br />
|[https://wiki.nanotech.ucsb.edu/w/images/c/c3/I2210308.pdf]<br />
|}</div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=File:I2210308.pdf&diff=159036
File:I2210308.pdf
2021-07-23T01:27:44Z
<p>Ningcao: </p>
<hr />
<div></div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=Test_Data_of_etching_SiO2_with_CHF3/CF4&diff=159035
Test Data of etching SiO2 with CHF3/CF4
2021-07-23T01:21:40Z
<p>Ningcao: adding a data point</p>
<hr />
<div>{| class="wikitable"<br />
| colspan="5" |ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec<br />
|<br />
|-<br />
|Date<br />
|Sample#<br />
|Etch Rate (nm/min)<br />
|Etch Selectivity (SiO2/PR)<br />
|Averaged Sidewall Angle (<sup>o</sup>)<br />
|SEM Images<br />
|-<br />
|10/5/2018<br />
|SiO2#02<br />
|160<br />
|1.2<br />
|82.1<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/1/13/SiO2_Etch_using_ICP2-no_O2.pdf]<br />
|-<br />
|1/28/2019<br />
|I21901<br />
|146<br />
|1.23<br />
|<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/f9/SiO2_Etch_using_ICP2-no_O2-a.pdf]<br />
|-<br />
|3/6/2019<br />
|I21904<br />
|151<br />
|1.23<br />
|85.6<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/8/87/SiO2_Etch_using_ICP2_no_O2-3-06-2019.pdf]<br />
|-<br />
|7/18/2019<br />
|I21905<br />
|162<br />
|1.37<br />
|<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/2/23/I2190506.pdf]<br />
|-<br />
|1/16/2020<br />
|I22001<br />
|149<br />
|1.21<br />
|<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/I2200122.pdf]<br />
|-<br />
|8/9/2020<br />
|I22002<br />
|102<br />
|0.86<br />
|caused by air leaking to CHF3 channel<br />
|[https://wiki.nanotech.ucsb.edu/w/images/d/d4/I2200203.pdf]<br />
|-<br />
|1/7/2021<br />
|I22101<br />
|144<br />
|1.20<br />
|<br />
|[https://wiki.nanotech.ucsb.edu/w/images/0/0c/I2210102.pdf]<br />
|-<br />
|5/19/2021<br />
|I22102<br />
|163<br />
|1.11<br />
|Etch time=130 sec<br />
|[https://wiki.nanotech.ucsb.edu/w/images/4/4c/I2210214.pdf]<br />
|-<br />
|7/22/2021<br />
|I22103<br />
|134<br />
|1.09<br />
|<br />
|<br />
|}</div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=Test_Data_of_etching_SiO2_with_CHF3/CF4&diff=158928
Test Data of etching SiO2 with CHF3/CF4
2021-05-20T02:30:47Z
<p>Ningcao: add a data point</p>
<hr />
<div>{| class="wikitable"<br />
| colspan="5" |ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec<br />
|<br />
|-<br />
|Date<br />
|Sample#<br />
|Etch Rate (nm/min)<br />
|Etch Selectivity (SiO2/PR)<br />
|Averaged Sidewall Angle (<sup>o</sup>)<br />
|SEM Images<br />
|-<br />
|10/5/2018<br />
|SiO2#02<br />
|160<br />
|1.2<br />
|82.1<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/1/13/SiO2_Etch_using_ICP2-no_O2.pdf]<br />
|-<br />
|1/28/2019<br />
|I21901<br />
|146<br />
|1.23<br />
|<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/f9/SiO2_Etch_using_ICP2-no_O2-a.pdf]<br />
|-<br />
|3/6/2019<br />
|I21904<br />
|151<br />
|1.23<br />
|85.6<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/8/87/SiO2_Etch_using_ICP2_no_O2-3-06-2019.pdf]<br />
|-<br />
|7/18/2019<br />
|I21905<br />
|162<br />
|1.37<br />
|<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/2/23/I2190506.pdf]<br />
|-<br />
|1/16/2020<br />
|I22001<br />
|149<br />
|1.21<br />
|<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/I2200122.pdf]<br />
|-<br />
|8/9/2020<br />
|I22002<br />
|102<br />
|0.86<br />
|caused by air leaking to CHF3 channel<br />
|[https://wiki.nanotech.ucsb.edu/w/images/d/d4/I2200203.pdf]<br />
|-<br />
|1/7/2021<br />
|I22101<br />
|144<br />
|1.20<br />
|<br />
|[https://wiki.nanotech.ucsb.edu/w/images/0/0c/I2210102.pdf]<br />
|-<br />
|5/19/2021<br />
|I22102<br />
|163<br />
|1.11<br />
|Etch time=130 sec<br />
|[https://wiki.nanotech.ucsb.edu/w/images/4/4c/I2210214.pdf]<br />
|}</div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=Test_Data_of_etching_SiO2_with_CHF3/CF4&diff=158927
Test Data of etching SiO2 with CHF3/CF4
2021-05-20T02:08:30Z
<p>Ningcao: add a SEM</p>
<hr />
<div>{| class="wikitable"<br />
| colspan="5" |ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec<br />
|<br />
|-<br />
|Date<br />
|Sample#<br />
|Etch Rate (nm/min)<br />
|Etch Selectivity (SiO2/PR)<br />
|Averaged Sidewall Angle (<sup>o</sup>)<br />
|SEM Images<br />
|-<br />
|10/5/2018<br />
|SiO2#02<br />
|160<br />
|1.2<br />
|82.1<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/1/13/SiO2_Etch_using_ICP2-no_O2.pdf]<br />
|-<br />
|1/28/2019<br />
|I21901<br />
|146<br />
|1.23<br />
|<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/f9/SiO2_Etch_using_ICP2-no_O2-a.pdf]<br />
|-<br />
|3/6/2019<br />
|I21904<br />
|151<br />
|1.23<br />
|85.6<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/8/87/SiO2_Etch_using_ICP2_no_O2-3-06-2019.pdf]<br />
|-<br />
|7/18/2019<br />
|I21905<br />
|162<br />
|1.37<br />
|<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/2/23/I2190506.pdf]<br />
|-<br />
|1/16/2020<br />
|I22001<br />
|149<br />
|1.21<br />
|<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/I2200122.pdf]<br />
|-<br />
|8/9/2020<br />
|I22002<br />
|102<br />
|0.86<br />
|caused by air leaking to CHF3 channel<br />
|[https://wiki.nanotech.ucsb.edu/w/images/d/d4/I2200203.pdf]<br />
|-<br />
|1/7/2021<br />
|I22101<br />
|144<br />
|1.20<br />
|<br />
|[https://wiki.nanotech.ucsb.edu/w/images/0/0c/I2210102.pdf]<br />
|-<br />
|5/19/2021<br />
|I22102<br />
|101<br />
|1.11<br />
|<br />
|[https://wiki.nanotech.ucsb.edu/w/images/4/4c/I2210214.pdf]<br />
|}</div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=File:I2210214.pdf&diff=158926
File:I2210214.pdf
2021-05-20T02:06:35Z
<p>Ningcao: </p>
<hr />
<div></div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=Test_Data_of_etching_SiO2_with_CHF3/CF4&diff=158925
Test Data of etching SiO2 with CHF3/CF4
2021-05-20T02:05:40Z
<p>Ningcao: add a new data point</p>
<hr />
<div>{| class="wikitable"<br />
| colspan="5" |ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec<br />
|<br />
|-<br />
|Date<br />
|Sample#<br />
|Etch Rate (nm/min)<br />
|Etch Selectivity (SiO2/PR)<br />
|Averaged Sidewall Angle (<sup>o</sup>)<br />
|SEM Images<br />
|-<br />
|10/5/2018<br />
|SiO2#02<br />
|160<br />
|1.2<br />
|82.1<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/1/13/SiO2_Etch_using_ICP2-no_O2.pdf]<br />
|-<br />
|1/28/2019<br />
|I21901<br />
|146<br />
|1.23<br />
|<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/f9/SiO2_Etch_using_ICP2-no_O2-a.pdf]<br />
|-<br />
|3/6/2019<br />
|I21904<br />
|151<br />
|1.23<br />
|85.6<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/8/87/SiO2_Etch_using_ICP2_no_O2-3-06-2019.pdf]<br />
|-<br />
|7/18/2019<br />
|I21905<br />
|162<br />
|1.37<br />
|<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/2/23/I2190506.pdf]<br />
|-<br />
|1/16/2020<br />
|I22001<br />
|149<br />
|1.21<br />
|<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/I2200122.pdf]<br />
|-<br />
|8/9/2020<br />
|I22002<br />
|102<br />
|0.86<br />
|caused by air leaking to CHF3 channel<br />
|[https://wiki.nanotech.ucsb.edu/w/images/d/d4/I2200203.pdf]<br />
|-<br />
|1/7/2021<br />
|I22101<br />
|144<br />
|1.20<br />
|<br />
|[https://wiki.nanotech.ucsb.edu/w/images/0/0c/I2210102.pdf]<br />
|-<br />
|5/19/2021<br />
|I22102<br />
|101<br />
|1.11<br />
|<br />
|<br />
|}</div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=Lithography_Recipes&diff=158847
Lithography Recipes
2021-04-09T01:00:19Z
<p>Ningcao: /* Holography Recipes */</p>
<hr />
<div> __NOTOC__<br />
{| class="wikitable"<br />
|+<br />
!Table of Contents<br />
|-<br />
|<br />
=== '''<big>Photolithography Processes</big>''' ===<br />
#'''UV Optical Lithography''' <br />
#*[[#PositivePR |'''Stocked Lithography Chemical + Datasheets''']]<br />
#**''Lists all stocked photolith. chemicals, PRs, strippers, developers, and links to the chemical's application notes/datasheet, which detail the spin curves and nominal processes.''<br />
#*[[#Photolithography_Recipes |'''Photo Lithography Recipe section''']]<br />
#**''Starting recipes (spin, bake, exposure, develop etc.) for all photolith. tools.'' <br />
#**''Substrate/surface materials/pattern size can affect process parameters. Users may need to run Focus/Exposure Arrays/Matrix (FEA's/FEM's) with these processes to achieve high-resolution.''<br />
#**[[Contact Alignment Recipes|<u>Contact Aligner Recipes</u>]]<br />
#***[[Contact Alignment Recipes#Suss Aligners .28SUSS MJB-3.29|Suss MJB Aligners]]<br />
#***[[Contact Alignment Recipes#Contact Aligner .28SUSS MA-6.29|Suss MA6]]<br />
#**[[Stepper Recipes|<u>Stepper Recipes</u>]]<br />
#***[[Stepper Recipes#Stepper 1 .28GCA 6300.29|Stepper #1: GCA 6300]] (I-Line)<br />
#***[[Stepper Recipes#Stepper 2 .28AutoStep 200.29|Stepper #2: GCA Autostep 200]] (I-Line)<br />
#***[[Stepper Recipes#Stepper 3 .28ASML DUV.29|Stepper #3: ASML PAS 5500/300]] (DUV)<br />
#**[[Direct-Write Lithography Recipes|<u>Direct-Write Recipes</u>]]<br />
#***[[Direct-Write Lithography Recipes#Maskless Aligner .28Heidelberg MLA150.29|Heidelberg MLA150]]<br />
#***[[Lithography Recipes#E-Beam Lithography Recipes|JEOL JBX-6300FS EBL]]<br />
#***[[Lithography Recipes#FIB Lithography Recipes .28Raith Velion.29|Raith Velion FIB]]<br />
#'''[[Lithography Recipes#Lift-Off Recipes|Lift-Off Recipes]]'''<br />
#*''Verified Recipes for lift-off using various photolith. tools''<br />
#*''General educational description of this technique and it's limitations/considerations.''<br />
#'''E-beam Lithography'''<br />
#*[[#E-Beam_Lithography_Recipes |E-Beam Lithography Recipes]]<br />
#**''Has links to starting recipes. Substrates and patterns play a large role in process parameters.''<br />
#*[[#EBLPR |EBL Photoresist Datasheets]]<br />
#**''Provided for reference, also showing starting recipes and usage info.''<br />
#'''[[Lithography Recipes#Holography Recipes|Holography]]'''<br />
#*''For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square.'' <br />
#*''Recipes for silicon substrates are provided, and have been translated to other substrates by users.''<br />
#'''[[#NanoImprinting |Nanoimprinting Resists]]'''<br />
#*''Datasheets are provided with starting recipes and usage info.'' <br />
#*''Recipes provided are for use in the [[Nano-Imprint_(Nanonex_NX2000) |Nano-Imprint (Nanonex NX2000)]] system only.''<br />
|-<br />
|<br />
=== '''<big>Photolithography Chemicals/Materials</big>''' ===<br />
#'''[[#Underlayers |Underlayers]]'''<br />
#*''These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist.'' <br />
#*''Datasheets are provided.''<br />
#'''[[#AntiReflectionCoatings |Anti-Reflection Coatings]]''': <br />
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.<br />
#*''Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes.'' <br />
#*''Datasheets are provided for reference on use of the materials.''<br />
#'''[[#ContrastEnhancement |Contrast Enhancement Materials (CEM)]]'''<br />
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.<br />
#*''Used for resolution enhancement. Not for use in contact aligners, typically used on I-Line Steppers.''<br />
#*''Datasheets provided with usage info.''<br />
#'''[[#AdhesionPromoters |Adhesion Promoters]]'''<br />
#*''These are used to improve wetting of photoresists to your substrate.'' <br />
#*''Datasheets are provided on use of these materials.''<br />
#'''[[#SpinOnDielectrics |Low-K Spin-on Dielectrics]]''' <br />
#*[[Lithography Recipes#SpinOnDielectrics|Spin-On Dielectrics]] <br />
#**''Datasheets for BCB, Photo-BCB, and SOG (spin-on-glass) for reference on use.''<br />
#*[[#Low-K_Spin-On_Dielectric_Recipes |Low-K Spin-On Dielectric Recipes]]<br />
#**''Recipes for usage of some spin-on dielectrics.''<br />
#'''[[#Developers |Developers and Removers]]'''<br />
#*''Datasheets provided for reference.''<br />
#*''Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching.''<br />
|}<br />
<br />
==Photolithography Recipes==<br />
<br />
{{Recipe Table Explanation}} <br />
''Click the tool title to go to recipes for that tool.'' <br />
<br />
''Click the photoresist title to get the datasheet, also found in [[Lithography Recipes#Chemicals Stocked .2B Datasheets|Stocked Chemicals + Datasheets]].''<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"<br />
|- <br />
! colspan="7" height="45" |<div style="font-size: 150%;">Photolithography Recipes</div><br />
<br />
|- <br />
| bgcolor="#EAECF0" | <!-- INTENTIONALLY BLANK --><br />
! colspan="2" align="center" |'''[[Contact Alignment Recipes|<big>Contact Aligner Recipes</big>]]'''<br />
! colspan="3" align="center" |'''[[Stepper Recipes|<big>Stepper Recipes</big>]]'''<br />
! align="center" |[[Direct-Write Lithography Recipes|Direct-Write Litho. Recipes]]<br />
|-<br />
! width="150" bgcolor="#D0E7FF" align="center" |'''Positive Resists''' <br />
{{LithRecipe Table}}<br />
|- bgcolor="EEFFFF"<!-- This is the Row color: lightblue --><br />
| bgcolor="#D0E7FF" align="center" |[[:File:AXP4000pb-Datasheet.pdf|AZ4110]]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}<br />
|-<!-- This is a White row color --><br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4210]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4330RS]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/a2/Az_p4620_photoresist_data_package.pdf AZ4620]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/8b/OCG825-Positive-Resist-Datasheet.pdf OCG 825-35CS]<br />
| A<br />
| A<br />
| A<br />
| A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-0.9]<br />
|A<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)}}<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-1.8]<br />
|A<br />
|A<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)}}<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-3.0]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)}}<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-7.0]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)}}<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/be/3600_D%2C_D2v_Spin_Speed_Curve.pdf THMR-IP3600 HP D]<br />
|<br />
|<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)}}<br />
|<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/ff/UV210-Positive-Resist-Datasheet.pdf UV210-0.3]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)}}<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/UV26-Positive-Resist-Datasheet.pdf UV26-2.5]<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|<br />
|- bgcolor="EEFFFF"<br />
! bgcolor="#D0E7FF" align="center" |'''Negative Resists''' <br />
{{LithRecipe Table}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/b0/AZ5214-Negative-Resist-Datasheet.pdf AZ5214-EIR]<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2020]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2035]<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |<br />
| bgcolor="EEFFFF" |A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2070]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|A<br />
|- <br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/82/AZnLOF5510-Negative-Resist-Datasheet.pdf AZnLOF 5510]<br />
|A<br />
|A<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/c/c9/UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf UVN30-0.8]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Negative Resist (ASML DUV)}}<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/7/78/SU-8-2015-revA.pdf SU-8 2005,2010,2015]<br />
| A<br />
| {{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
| A<br />
| A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/2c/SU-8-2075-revA.pdf SU-8 2075]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}<br />
|- <br />
| bgcolor="#D0E7FF" align="center" |NR9-[//wiki.nanotech.ucsb.edu/w/images/8/8f/NR9-1000PY-revA.pdf 1000],[//wiki.nanotech.ucsb.edu/w/images/7/71/NR9-3000PY-revA.pdf 3000],[//wiki.nanotech.ucsb.edu/w/images/f/f9/NR9-6000PY-revA.pdf 6000]PY<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
! bgcolor="#D0E7FF" align="center" | '''Anti-Reflection Coatings'''<br />
{{LithRecipe Table}} <br />
|-<br />
|bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/33/XHRiC-Anti-Reflective-Coating.pdf XHRiC-11]<br />
|<br />
|<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/DUV42P-Anti-Reflective-Coating.pdf DUV42-P]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|DUV-42P}}<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101-304]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|DS-K101-304}}<br />
|<br />
|-<br />
! bgcolor="#D0E7FF" align="center" | <br />
{{LithRecipe Table}} <br />
|}<br />
<!-- end Litho Recipes table --><br />
<br />
==Lift-Off Recipes==<br />
<br />
*{{fl|Liftoff-Techniques.pdf|Lift-Off Description/Tutorial}}<br />
**How it works, process limits and considerations for designing your process<br />
*{{fl|Bi-LayerContactprocesswithPMGI.pdf|I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner}}<br />
*[[Lift-Off with DUV Imaging + PMGI Underlayer|DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer]]<br />
<br />
==[[E-Beam Lithography System (JEOL JBX-6300FS)|E-Beam Lithography Recipes (JEOL JBX-6300FS)]]==<br />
<br />
*Under Development.<br />
<br />
== [[Focused Ion-Beam Lithography (Raith Velion)|FIB Lithography Recipes (Raith Velion)]] ==<br />
''To Be Added''<br />
<br />
==[[Automated Coat/Develop System (S-Cubed Flexi)|Automated Coat/Develop System Recipes (S-Cubed Flexi)]]==<br />
Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info.<br />
<br />
''To Be Added''<br />
<br />
==[[Nano-Imprint (Nanonex NX2000)|Nanoimprinting Recipes]]==<br />
<br />
*{{fl|Thermal-Nanoimprint-Process-Tutorial-revA.pdf|Thermal Nanoimprint Process and Tutorial}}<br />
*{{fl|Nanoinprint-Lithopgraphy-UV-Low-Pressure-Temperature-Ormostamp-PDMS-RevA.docx|UV-Cure Low Temp, Low Pressure, Soft-Stamp Nanoimprint Process}}<br />
<br />
==[[Holographic Lith/PL Setup (Custom)|Holography Recipes]]==<br />
''The Holography recipes here use the BARC layer XHRiC-11 & the high-res. I-Line photoresist THMR-IP3600HP-D.''<br />
*{{fl|Holography_Process_for_1D-lines_and_2D-dots_%28ARC-11_%26_THMR-IP3600HP-D%29-updated-4-8-2021.pdf|Standard Holography Process - on SiO2 on Si}}<br />
*{{fl|Holography-Process-Variation-revA.pdf|Holography Process Variations - Set-up Angle - Etching into SiO2 and Si}}<br />
*{{fl|05-SiO2_Nano-structure_Etch.pdf|Etch SiO2 Nano-structure - Changing Side-wall Angle - Etching into Si with a different line-width}}<br />
*{{fl|30-Redicing_Nanowire_Diameter_by_Thermal_Oxidation_and_Vapored_HF_Etch.pdf|Reduce SiO2 Nanowire Diameter - Thermal Oxidation - Vapor HF Etching}}<br />
<br />
==Low-K Spin-On Dielectric Recipes==<br />
<br />
*{{fl|Lithography-BCB-photo-lowk-dielectric-spinon-4024-40-revA.docx|Photo BCB (4024-40)}}<br />
*{{fl|BCB-cyclotene-3000-revA.pdf|Standard BCB (3022-46)}}<br />
*{{fl|512B-Application-Data-Bake-revA.pdf|SOG (T512B)}}<br />
<br />
==Chemicals Stocked + Datasheets==<br />
''The following is a list of the lithography chemicals we stock in the lab, with links to the datasheets for each. The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.''<br />
{|<br />
|- valign="top"<br />
| width="400" |<br />
;<div id="PositivePR"><big>Positive Photoresists</big></div><br />
<br />
'''''i-line and broadband'''''<br />
<br />
*{{fl|AXP4000pb-Datasheet.pdf|AZP4000 (AZ4110, AZ4210, AZ4330)}}<br />
*{{fl|OCG825-Positive-Resist-Datasheet.pdf|OCG825}}<br />
*{{fl|SPR220-Positive-Resist-Datasheet.pdf|SPR220 (SPR220-3, SPR220-7)}}<br />
*{{fl|SPR955-Positive-Resist-Datasheet.pdf|SPR955CM (SPR955CM-0.9, SPR955CM-1.8)}}<br />
*THMR-3600HP (Thin I-Line & Holography)<br />
**{{fl|THMR_iP_3500_iP3600.pdf|Evaluation Results: THMR-3600HP}}<br />
**{{fl|3600_D,_D2v_Spin_Speed_Curve.pdf|Spin Curves for THMR-3600HP}}<br />
**{{fl|THMR-iP3600_HP_D_20140801_(B)_GHS_US.pdf|Safety Datasheet for THMR-3600HP}}<br />
<br />
'''''DUV-248nm'''''<br />
<br />
*{{fl|UV210-Positive-Resist-Datasheet.pdf|UV210-0.3}}<br />
*{{fl|UV6-Positive-Resist-Datasheet.pdf|UV6-0.8}}<br />
*{{fl|UV26-Positive-Resist-Datasheet.pdf|UV26-2.5}}<br />
<br />
;<div id="NegativePR"><big>Negative Photoresists</big></div><br />
<br />
'''''i-line and broadband'''''<br />
<br />
*{{fl|AZ5214-Negative-Resist-Datasheet.pdf|AZ5214}}<br />
*{{fl|AZnLOF5510-Negative-Resist-Datasheet.pdf|AZnLOF5510}}<br />
*{{fl|AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2000 (AZnLOF2020, AZnLOF2035, AZnLOF2070)}}<br />
*{{fl|NR9-1000PY-revA.pdf|Futurrex NR9-1000PY(use AZ300MIF dev)}}<br />
*{{fl|NR9-3000PY-revA.pdf|Futurrex NR9-3000PY(use AZ300MIF dev)}}<br />
*{{fl|NR9-6000PY-revA.pdf|Futurrex NR9-6000PY(use AZ300MIF dev)}}<br />
*{{fl|SU-8-2015-revA.pdf|SU-8-2005,2010, 2015}}<br />
*{{fl|SU-8-2075-revA.pdf|SU-8-2075}}<br />
<br />
'''''DUV-248nm'''''<br />
<br />
*{{fl|UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf|UVN-30-0.8}}<br />
<br />
;<div id="Underlayers"><big>Underlayers</big></div><br />
<br />
*{{fl|PMGI-Underlayer-Datasheet.pdf|PMGI (PMGI SF3,5,8,11,15)}}<br />
*{{fl|LOL2000-Underlayer-Datasheet.pdf|Shipley LOL2000}}<br />
<br />
;<div id="EBLPR"><big>E-beam resists</big></div><br />
<br />
*{{fl|PMMA-E-Beam-Resist-Datasheet.pdf|PMMA (PMMA, P(MMA-MAA) copolymer)}}<br />
*{{fl|maN2403-E-Beam-Resist-Datasheet.pdf|maN 2403}}<br />
<br />
;<div id="NanoImprinting"><big>Nanoimprinting</big></div><br />
<br />
*{{fl|NX1020-Nanoimprinting-Datasheet.pdf|NX1020}}<br />
*{{fl|MRI-7020-Nanoimprinting-Datasheet.pdf|MRI-7020}}<br />
*{{fl|Mr-UVCur21.pdf|MR-UVCur21}}<br />
*{{fl|OrmoStamp-NIL-Lithography-UV-Soft-RevA.pdf|Ormostamp}}<br />
<br />
|<br />
;<div id="ContrastEnhancement"><big>Contrast Enhancement Materials</big></div><br />
<br />
*{{fl|CEM365iS-Contrast-Enhancement-Datasheet.pdf|CEM365iS}}<br />
<br />
;<div id="AntiReflectionCoatings"><big>Anti-Reflection Coatings</big></div><br />
<br />
*{{fl|XHRiC-Anti-Reflective-Coating.pdf|XHRiC-11 (i-line)}}<br />
*{{fl|DUV42P-Anti-Reflective-Coating.pdf|DUV42P (DUV) (For AR2 replacement)}}<br />
*{{fl|DS-K101-304-Anti-Reflective-Coating.pdf|DS-K101-304 (DUV developable BARC)}}<br />
<br />
;<div id="AdhesionPromoters"><big>Adhesion Promoters</big></div><br />
<br />
*HMDS<br />
*AP3000 BCB Adhesion Promoter<br />
*{{fl|OMNICOAT-revA.pdf|Omnicoat, SU-8 Adhesion Promoter}}<br />
*{{fl|OrmoPrime-NIL-Adhesion-RevA.pdf|Ormoprime08-Ormostsmp Adhesion Promoter}}<br />
<br />
;<div id="SpinOnDielectrics"><big>Spin-On Dielectrics</big></div><br />
<br />
''Low-K Spin-On Dielectrics such as Benzocyclobutane and Spin-on Glass''<br />
<br />
*{{fl|BCB-cyclotene-3000-revA.pdf|BCB, Cyclotene 3022-46(Not Photosensitive)}}<br />
*{{fl|BCB-cyclotene-4000-revA.pdf|PhotoBCB, Cyclotene 4022-40(Negative Polarity)}}<br />
*{{fl|BCB-adhesion.pdf|BCB Adhesion Notes from Vendor}}<br />
*{{fl|BCB-rework.pdf|BCB rework Notes from Vendor}}<br />
*{{fl|512B-Datasheet-revA.pdf|Spin-on-Glass, Honeywell 512B (Not Photosensitive)}}<br />
*{{fl|512B-Application-Data-Bake-revA.pdf|Honeywell 512B Apps Data}}<br />
<br />
;<div id="Developers"><big>Developers</big></div><br />
<br />
*{{fl|AZ400K-Developer-Datasheet.pdf|AZ400K (AZ400K, AZ400K1:4)}}<br />
*{{fl|AZ300MIF-Developer-Datasheet.pdf|AZ300MIF}}<br />
*DS2100 BCB Developer<br />
*SU-8 Developer<br />
*101A Developer (for DUV Flood Exposed PMGI)<br />
<br />
;<div id="PRRemovers"><big>Photoresist Removers</big></div><br />
<br />
*[http://www.microchemicals.com/products/remover_stripper/nmp.html AZ NMP]<br />
**''This replaces {{fl|1165-Resist-Remover.pdf|1165}}''<br />
*{{fl|AZ300T-Resist-Remover.pdf|AZ300T}}<br />
*{{fl|RemoverPG-revA.pdf|Remover PG, SU-8 stripper}}<br />
*AZ EBR ("Edge Bead Remover", PGMEA)<br />
<br />
|}<br />
<br />
[[Category: Processing]]<br />
[[category: Lithography]]<br />
[[category: Recipes]]</div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=Lithography_Recipes&diff=158846
Lithography Recipes
2021-04-09T00:55:57Z
<p>Ningcao: /* Holography Recipes */</p>
<hr />
<div> __NOTOC__<br />
{| class="wikitable"<br />
|+<br />
!Table of Contents<br />
|-<br />
|<br />
=== '''<big>Photolithography Processes</big>''' ===<br />
#'''UV Optical Lithography''' <br />
#*[[#PositivePR |'''Stocked Lithography Chemical + Datasheets''']]<br />
#**''Lists all stocked photolith. chemicals, PRs, strippers, developers, and links to the chemical's application notes/datasheet, which detail the spin curves and nominal processes.''<br />
#*[[#Photolithography_Recipes |'''Photo Lithography Recipe section''']]<br />
#**''Starting recipes (spin, bake, exposure, develop etc.) for all photolith. tools.'' <br />
#**''Substrate/surface materials/pattern size can affect process parameters. Users may need to run Focus/Exposure Arrays/Matrix (FEA's/FEM's) with these processes to achieve high-resolution.''<br />
#**[[Contact Alignment Recipes|<u>Contact Aligner Recipes</u>]]<br />
#***[[Contact Alignment Recipes#Suss Aligners .28SUSS MJB-3.29|Suss MJB Aligners]]<br />
#***[[Contact Alignment Recipes#Contact Aligner .28SUSS MA-6.29|Suss MA6]]<br />
#**[[Stepper Recipes|<u>Stepper Recipes</u>]]<br />
#***[[Stepper Recipes#Stepper 1 .28GCA 6300.29|Stepper #1: GCA 6300]] (I-Line)<br />
#***[[Stepper Recipes#Stepper 2 .28AutoStep 200.29|Stepper #2: GCA Autostep 200]] (I-Line)<br />
#***[[Stepper Recipes#Stepper 3 .28ASML DUV.29|Stepper #3: ASML PAS 5500/300]] (DUV)<br />
#**[[Direct-Write Lithography Recipes|<u>Direct-Write Recipes</u>]]<br />
#***[[Direct-Write Lithography Recipes#Maskless Aligner .28Heidelberg MLA150.29|Heidelberg MLA150]]<br />
#***[[Lithography Recipes#E-Beam Lithography Recipes|JEOL JBX-6300FS EBL]]<br />
#***[[Lithography Recipes#FIB Lithography Recipes .28Raith Velion.29|Raith Velion FIB]]<br />
#'''[[Lithography Recipes#Lift-Off Recipes|Lift-Off Recipes]]'''<br />
#*''Verified Recipes for lift-off using various photolith. tools''<br />
#*''General educational description of this technique and it's limitations/considerations.''<br />
#'''E-beam Lithography'''<br />
#*[[#E-Beam_Lithography_Recipes |E-Beam Lithography Recipes]]<br />
#**''Has links to starting recipes. Substrates and patterns play a large role in process parameters.''<br />
#*[[#EBLPR |EBL Photoresist Datasheets]]<br />
#**''Provided for reference, also showing starting recipes and usage info.''<br />
#'''[[Lithography Recipes#Holography Recipes|Holography]]'''<br />
#*''For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square.'' <br />
#*''Recipes for silicon substrates are provided, and have been translated to other substrates by users.''<br />
#'''[[#NanoImprinting |Nanoimprinting Resists]]'''<br />
#*''Datasheets are provided with starting recipes and usage info.'' <br />
#*''Recipes provided are for use in the [[Nano-Imprint_(Nanonex_NX2000) |Nano-Imprint (Nanonex NX2000)]] system only.''<br />
|-<br />
|<br />
=== '''<big>Photolithography Chemicals/Materials</big>''' ===<br />
#'''[[#Underlayers |Underlayers]]'''<br />
#*''These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist.'' <br />
#*''Datasheets are provided.''<br />
#'''[[#AntiReflectionCoatings |Anti-Reflection Coatings]]''': <br />
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.<br />
#*''Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes.'' <br />
#*''Datasheets are provided for reference on use of the materials.''<br />
#'''[[#ContrastEnhancement |Contrast Enhancement Materials (CEM)]]'''<br />
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.<br />
#*''Used for resolution enhancement. Not for use in contact aligners, typically used on I-Line Steppers.''<br />
#*''Datasheets provided with usage info.''<br />
#'''[[#AdhesionPromoters |Adhesion Promoters]]'''<br />
#*''These are used to improve wetting of photoresists to your substrate.'' <br />
#*''Datasheets are provided on use of these materials.''<br />
#'''[[#SpinOnDielectrics |Low-K Spin-on Dielectrics]]''' <br />
#*[[Lithography Recipes#SpinOnDielectrics|Spin-On Dielectrics]] <br />
#**''Datasheets for BCB, Photo-BCB, and SOG (spin-on-glass) for reference on use.''<br />
#*[[#Low-K_Spin-On_Dielectric_Recipes |Low-K Spin-On Dielectric Recipes]]<br />
#**''Recipes for usage of some spin-on dielectrics.''<br />
#'''[[#Developers |Developers and Removers]]'''<br />
#*''Datasheets provided for reference.''<br />
#*''Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching.''<br />
|}<br />
<br />
==Photolithography Recipes==<br />
<br />
{{Recipe Table Explanation}} <br />
''Click the tool title to go to recipes for that tool.'' <br />
<br />
''Click the photoresist title to get the datasheet, also found in [[Lithography Recipes#Chemicals Stocked .2B Datasheets|Stocked Chemicals + Datasheets]].''<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"<br />
|- <br />
! colspan="7" height="45" |<div style="font-size: 150%;">Photolithography Recipes</div><br />
<br />
|- <br />
| bgcolor="#EAECF0" | <!-- INTENTIONALLY BLANK --><br />
! colspan="2" align="center" |'''[[Contact Alignment Recipes|<big>Contact Aligner Recipes</big>]]'''<br />
! colspan="3" align="center" |'''[[Stepper Recipes|<big>Stepper Recipes</big>]]'''<br />
! align="center" |[[Direct-Write Lithography Recipes|Direct-Write Litho. Recipes]]<br />
|-<br />
! width="150" bgcolor="#D0E7FF" align="center" |'''Positive Resists''' <br />
{{LithRecipe Table}}<br />
|- bgcolor="EEFFFF"<!-- This is the Row color: lightblue --><br />
| bgcolor="#D0E7FF" align="center" |[[:File:AXP4000pb-Datasheet.pdf|AZ4110]]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}<br />
|-<!-- This is a White row color --><br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4210]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4330RS]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/a2/Az_p4620_photoresist_data_package.pdf AZ4620]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/8b/OCG825-Positive-Resist-Datasheet.pdf OCG 825-35CS]<br />
| A<br />
| A<br />
| A<br />
| A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-0.9]<br />
|A<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)}}<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-1.8]<br />
|A<br />
|A<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)}}<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-3.0]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)}}<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-7.0]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)}}<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/be/3600_D%2C_D2v_Spin_Speed_Curve.pdf THMR-IP3600 HP D]<br />
|<br />
|<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)}}<br />
|<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/ff/UV210-Positive-Resist-Datasheet.pdf UV210-0.3]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)}}<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/UV26-Positive-Resist-Datasheet.pdf UV26-2.5]<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|<br />
|- bgcolor="EEFFFF"<br />
! bgcolor="#D0E7FF" align="center" |'''Negative Resists''' <br />
{{LithRecipe Table}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/b0/AZ5214-Negative-Resist-Datasheet.pdf AZ5214-EIR]<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2020]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2035]<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |<br />
| bgcolor="EEFFFF" |A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2070]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|A<br />
|- <br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/82/AZnLOF5510-Negative-Resist-Datasheet.pdf AZnLOF 5510]<br />
|A<br />
|A<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/c/c9/UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf UVN30-0.8]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Negative Resist (ASML DUV)}}<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/7/78/SU-8-2015-revA.pdf SU-8 2005,2010,2015]<br />
| A<br />
| {{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
| A<br />
| A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/2c/SU-8-2075-revA.pdf SU-8 2075]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}<br />
|- <br />
| bgcolor="#D0E7FF" align="center" |NR9-[//wiki.nanotech.ucsb.edu/w/images/8/8f/NR9-1000PY-revA.pdf 1000],[//wiki.nanotech.ucsb.edu/w/images/7/71/NR9-3000PY-revA.pdf 3000],[//wiki.nanotech.ucsb.edu/w/images/f/f9/NR9-6000PY-revA.pdf 6000]PY<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
! bgcolor="#D0E7FF" align="center" | '''Anti-Reflection Coatings'''<br />
{{LithRecipe Table}} <br />
|-<br />
|bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/33/XHRiC-Anti-Reflective-Coating.pdf XHRiC-11]<br />
|<br />
|<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/DUV42P-Anti-Reflective-Coating.pdf DUV42-P]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|DUV-42P}}<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101-304]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|DS-K101-304}}<br />
|<br />
|-<br />
! bgcolor="#D0E7FF" align="center" | <br />
{{LithRecipe Table}} <br />
|}<br />
<!-- end Litho Recipes table --><br />
<br />
==Lift-Off Recipes==<br />
<br />
*{{fl|Liftoff-Techniques.pdf|Lift-Off Description/Tutorial}}<br />
**How it works, process limits and considerations for designing your process<br />
*{{fl|Bi-LayerContactprocesswithPMGI.pdf|I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner}}<br />
*[[Lift-Off with DUV Imaging + PMGI Underlayer|DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer]]<br />
<br />
==[[E-Beam Lithography System (JEOL JBX-6300FS)|E-Beam Lithography Recipes (JEOL JBX-6300FS)]]==<br />
<br />
*Under Development.<br />
<br />
== [[Focused Ion-Beam Lithography (Raith Velion)|FIB Lithography Recipes (Raith Velion)]] ==<br />
''To Be Added''<br />
<br />
==[[Automated Coat/Develop System (S-Cubed Flexi)|Automated Coat/Develop System Recipes (S-Cubed Flexi)]]==<br />
Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info.<br />
<br />
''To Be Added''<br />
<br />
==[[Nano-Imprint (Nanonex NX2000)|Nanoimprinting Recipes]]==<br />
<br />
*{{fl|Thermal-Nanoimprint-Process-Tutorial-revA.pdf|Thermal Nanoimprint Process and Tutorial}}<br />
*{{fl|Nanoinprint-Lithopgraphy-UV-Low-Pressure-Temperature-Ormostamp-PDMS-RevA.docx|UV-Cure Low Temp, Low Pressure, Soft-Stamp Nanoimprint Process}}<br />
<br />
==[[Holographic Lith/PL Setup (Custom)|Holography Recipes]]==<br />
''The Holography recipes here use the BARC layer XHRiC-11 & the high-res. I-Line photoresist THMR-IP3600HP-D.''<br />
*{{fl|https://wiki.nanotech.ucsb.edu/w/images/6/6d/Holography_Process_for_1D-lines_and_2D-dots_%28ARC-11_%26_THMR-IP3600HP-D%29-updated-4-8-2021.pdf|Standard Holography Process - on SiO2 on Si}}<br />
*{{fl|Holography-Process-Variation-revA.pdf|Holography Process Variations - Set-up Angle - Etching into SiO2 and Si}}<br />
*{{fl|05-SiO2_Nano-structure_Etch.pdf|Etch SiO2 Nano-structure - Changing Side-wall Angle - Etching into Si with a different line-width}}<br />
*{{fl|30-Redicing_Nanowire_Diameter_by_Thermal_Oxidation_and_Vapored_HF_Etch.pdf|Reduce SiO2 Nanowire Diameter - Thermal Oxidation - Vapor HF Etching}}<br />
<br />
==Low-K Spin-On Dielectric Recipes==<br />
<br />
*{{fl|Lithography-BCB-photo-lowk-dielectric-spinon-4024-40-revA.docx|Photo BCB (4024-40)}}<br />
*{{fl|BCB-cyclotene-3000-revA.pdf|Standard BCB (3022-46)}}<br />
*{{fl|512B-Application-Data-Bake-revA.pdf|SOG (T512B)}}<br />
<br />
==Chemicals Stocked + Datasheets==<br />
''The following is a list of the lithography chemicals we stock in the lab, with links to the datasheets for each. The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.''<br />
{|<br />
|- valign="top"<br />
| width="400" |<br />
;<div id="PositivePR"><big>Positive Photoresists</big></div><br />
<br />
'''''i-line and broadband'''''<br />
<br />
*{{fl|AXP4000pb-Datasheet.pdf|AZP4000 (AZ4110, AZ4210, AZ4330)}}<br />
*{{fl|OCG825-Positive-Resist-Datasheet.pdf|OCG825}}<br />
*{{fl|SPR220-Positive-Resist-Datasheet.pdf|SPR220 (SPR220-3, SPR220-7)}}<br />
*{{fl|SPR955-Positive-Resist-Datasheet.pdf|SPR955CM (SPR955CM-0.9, SPR955CM-1.8)}}<br />
*THMR-3600HP (Thin I-Line & Holography)<br />
**{{fl|THMR_iP_3500_iP3600.pdf|Evaluation Results: THMR-3600HP}}<br />
**{{fl|3600_D,_D2v_Spin_Speed_Curve.pdf|Spin Curves for THMR-3600HP}}<br />
**{{fl|THMR-iP3600_HP_D_20140801_(B)_GHS_US.pdf|Safety Datasheet for THMR-3600HP}}<br />
<br />
'''''DUV-248nm'''''<br />
<br />
*{{fl|UV210-Positive-Resist-Datasheet.pdf|UV210-0.3}}<br />
*{{fl|UV6-Positive-Resist-Datasheet.pdf|UV6-0.8}}<br />
*{{fl|UV26-Positive-Resist-Datasheet.pdf|UV26-2.5}}<br />
<br />
;<div id="NegativePR"><big>Negative Photoresists</big></div><br />
<br />
'''''i-line and broadband'''''<br />
<br />
*{{fl|AZ5214-Negative-Resist-Datasheet.pdf|AZ5214}}<br />
*{{fl|AZnLOF5510-Negative-Resist-Datasheet.pdf|AZnLOF5510}}<br />
*{{fl|AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2000 (AZnLOF2020, AZnLOF2035, AZnLOF2070)}}<br />
*{{fl|NR9-1000PY-revA.pdf|Futurrex NR9-1000PY(use AZ300MIF dev)}}<br />
*{{fl|NR9-3000PY-revA.pdf|Futurrex NR9-3000PY(use AZ300MIF dev)}}<br />
*{{fl|NR9-6000PY-revA.pdf|Futurrex NR9-6000PY(use AZ300MIF dev)}}<br />
*{{fl|SU-8-2015-revA.pdf|SU-8-2005,2010, 2015}}<br />
*{{fl|SU-8-2075-revA.pdf|SU-8-2075}}<br />
<br />
'''''DUV-248nm'''''<br />
<br />
*{{fl|UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf|UVN-30-0.8}}<br />
<br />
;<div id="Underlayers"><big>Underlayers</big></div><br />
<br />
*{{fl|PMGI-Underlayer-Datasheet.pdf|PMGI (PMGI SF3,5,8,11,15)}}<br />
*{{fl|LOL2000-Underlayer-Datasheet.pdf|Shipley LOL2000}}<br />
<br />
;<div id="EBLPR"><big>E-beam resists</big></div><br />
<br />
*{{fl|PMMA-E-Beam-Resist-Datasheet.pdf|PMMA (PMMA, P(MMA-MAA) copolymer)}}<br />
*{{fl|maN2403-E-Beam-Resist-Datasheet.pdf|maN 2403}}<br />
<br />
;<div id="NanoImprinting"><big>Nanoimprinting</big></div><br />
<br />
*{{fl|NX1020-Nanoimprinting-Datasheet.pdf|NX1020}}<br />
*{{fl|MRI-7020-Nanoimprinting-Datasheet.pdf|MRI-7020}}<br />
*{{fl|Mr-UVCur21.pdf|MR-UVCur21}}<br />
*{{fl|OrmoStamp-NIL-Lithography-UV-Soft-RevA.pdf|Ormostamp}}<br />
<br />
|<br />
;<div id="ContrastEnhancement"><big>Contrast Enhancement Materials</big></div><br />
<br />
*{{fl|CEM365iS-Contrast-Enhancement-Datasheet.pdf|CEM365iS}}<br />
<br />
;<div id="AntiReflectionCoatings"><big>Anti-Reflection Coatings</big></div><br />
<br />
*{{fl|XHRiC-Anti-Reflective-Coating.pdf|XHRiC-11 (i-line)}}<br />
*{{fl|DUV42P-Anti-Reflective-Coating.pdf|DUV42P (DUV) (For AR2 replacement)}}<br />
*{{fl|DS-K101-304-Anti-Reflective-Coating.pdf|DS-K101-304 (DUV developable BARC)}}<br />
<br />
;<div id="AdhesionPromoters"><big>Adhesion Promoters</big></div><br />
<br />
*HMDS<br />
*AP3000 BCB Adhesion Promoter<br />
*{{fl|OMNICOAT-revA.pdf|Omnicoat, SU-8 Adhesion Promoter}}<br />
*{{fl|OrmoPrime-NIL-Adhesion-RevA.pdf|Ormoprime08-Ormostsmp Adhesion Promoter}}<br />
<br />
;<div id="SpinOnDielectrics"><big>Spin-On Dielectrics</big></div><br />
<br />
''Low-K Spin-On Dielectrics such as Benzocyclobutane and Spin-on Glass''<br />
<br />
*{{fl|BCB-cyclotene-3000-revA.pdf|BCB, Cyclotene 3022-46(Not Photosensitive)}}<br />
*{{fl|BCB-cyclotene-4000-revA.pdf|PhotoBCB, Cyclotene 4022-40(Negative Polarity)}}<br />
*{{fl|BCB-adhesion.pdf|BCB Adhesion Notes from Vendor}}<br />
*{{fl|BCB-rework.pdf|BCB rework Notes from Vendor}}<br />
*{{fl|512B-Datasheet-revA.pdf|Spin-on-Glass, Honeywell 512B (Not Photosensitive)}}<br />
*{{fl|512B-Application-Data-Bake-revA.pdf|Honeywell 512B Apps Data}}<br />
<br />
;<div id="Developers"><big>Developers</big></div><br />
<br />
*{{fl|AZ400K-Developer-Datasheet.pdf|AZ400K (AZ400K, AZ400K1:4)}}<br />
*{{fl|AZ300MIF-Developer-Datasheet.pdf|AZ300MIF}}<br />
*DS2100 BCB Developer<br />
*SU-8 Developer<br />
*101A Developer (for DUV Flood Exposed PMGI)<br />
<br />
;<div id="PRRemovers"><big>Photoresist Removers</big></div><br />
<br />
*[http://www.microchemicals.com/products/remover_stripper/nmp.html AZ NMP]<br />
**''This replaces {{fl|1165-Resist-Remover.pdf|1165}}''<br />
*{{fl|AZ300T-Resist-Remover.pdf|AZ300T}}<br />
*{{fl|RemoverPG-revA.pdf|Remover PG, SU-8 stripper}}<br />
*AZ EBR ("Edge Bead Remover", PGMEA)<br />
<br />
|}<br />
<br />
[[Category: Processing]]<br />
[[category: Lithography]]<br />
[[category: Recipes]]</div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=File:Holography_Process_for_1D-lines_and_2D-dots_(ARC-11_%26_THMR-IP3600HP-D)-updated-4-8-2021.pdf&diff=158845
File:Holography Process for 1D-lines and 2D-dots (ARC-11 & THMR-IP3600HP-D)-updated-4-8-2021.pdf
2021-04-09T00:54:01Z
<p>Ningcao: </p>
<hr />
<div></div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=Dry_Etching_Recipes&diff=158760
Dry Etching Recipes
2021-02-04T23:32:14Z
<p>Ningcao: </p>
<hr />
<div>{{Recipe Table Explanation}}<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"<br />
|- bgcolor="#d0e7ff"<br />
! colspan="17" width="725" height="45" |<div style="font-size: 150%;">Dry Etching Recipes</div><br />
|- bgcolor="#d0e7ff"<br />
|<!-- INTENTIONALLY LEFT BLANK --><br />
! colspan="3" |'''[[RIE Etching Recipes|RIE Etching]]'''<br />
! colspan="5" |'''[[ICP Etching Recipes|ICP Etching]]'''<br />
! colspan="5" bgcolor="#d0e7ff" align="center" |'''[[Oxygen Plasma System Recipes|Oxygen Plasma Systems]]'''<br />
! colspan="3" bgcolor="#d0e7ff" align="center" |'''[[Other Dry Etching Recipes|Other Dry Etchers]]'''<br />
|-<br />
! width="65" bgcolor="#d0e7ff" align="center" |'''Material'''<br />
| width="65" bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_2_.28MRC.29|RIE 2<br> (MRC)]]<br />
| width="65" bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_3_.28MRC.29|RIE 3<br> (MRC)]]<br />
| width="100" bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_5_.28PlasmaTherm.29|RIE 5<br>(PlasmaTherm)]]<br />
| width="100" bgcolor="#daf1ff" |[[ICP_Etching_Recipes#DSEIII_.28PlasmaTherm.2FDeep_Silicon_Etcher.29|DSEIII<br>(PlasmaTherm)]]<br />
| width="100" bgcolor="#daf1ff" |[https://wiki.nanotech.ucsb.edu/wiki/index.php/ICP_Etching_Recipes#PlasmaTherm.2FSLR_Fluorine_Etcher SLR Fluorine ICP (PlasmaTherm)]<br />
| width="120" bgcolor="#daf1ff" |[[ICP_Etching_Recipes#ICP_Etch_1_.28Panasonic_E626I.29|ICP Etch 1<br>(Panasonic 1)]]<br />
| width="120" bgcolor="#daf1ff" |[[ICP_Etching_Recipes#ICP_Etch_2_.28Panasonic_E640.29|ICP Etch 2<br>(Panasonic 2)]]<br />
| width="85" bgcolor="#daf1ff" |[[ICP_Etching_Recipes#ICP-Etch_.28Unaxis_VLR.29|ICP-Etch<br>(Unaxis VLR)]]<br />
| width="85" bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Ashers_.28Technics_PEII.29|Ashers<br>(Technics PEII)]]<br />
| width="95" bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Plasma_Clean_.28Gasonics_2000.29|Plasma Clean<br>(Gasonics 2000)]]<br />
| width="95" bgcolor="#daf1ff" |[[Oxygen Plasma System Recipes#Plasma Clean .28YES EcoClean.29|Plasma Clean (YES EcoClean)]]<br />
| width="85" bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#UV_Ozone_Reactor|UV Ozone Reactor]]<br />
| width="85" bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Plasma_Activation_.28EVG_810.29|Plasma Activation<br>(EVG 810)]]<br />
| width="85" bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#XeF2_Etch_.28Xetch.29|XeF2 Etch<br>(Xetch)]]<br />
| width="85" bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#Vapor_HF_Etch_.28uETCH.29|Vapor HF Etch<br>(uETCH)]]<br />
| width="85" bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#CAIBE_.28Oxford_Ion_Mill.29|CAIBE<br>(Oxford)]]<br />
|- bgcolor="#eeffff"<br />
! bgcolor="#d0e7ff" align="center" |Ag<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|- bgcolor="#eeffff"<br />
! bgcolor="#d0e7ff" align="center" |Al<br />
|<br />
|<br />
|[[RIE Etching Recipes|A]]<br />
|<br />
|<br />
|{{rl|ICP Etching Recipes|Al Etch (Panasonic 1)}}<br />
|{{rl|ICP Etching Recipes|Al Etch (Panasonic 2)}}<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|- bgcolor="#eeffff"<br />
! bgcolor="#d0e7ff" align="center" |Au<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Other Dry Etching Recipes|Other Dry Etch (CAIBE (Oxford Ion Mill))}}<br />
|- bgcolor="#eeffff"<br />
! bgcolor="#d0e7ff" align="center" |Cr<br />
|<br />
|<br />
|A<br />
|<br />
|<br />
|{{rl|ICP Etching Recipes|Cr Etch (Panasonic 1)}}<br />
|A<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|- bgcolor="#eeffff"<br />
! bgcolor="#d0e7ff" align="center" |Cu<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Ge<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|<br />
|A<br />
|- bgcolor="#eeffff"<br />
! bgcolor="#d0e7ff" align="center" |Mo<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Ni<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Other Dry Etching Recipes|Other Dry Etch (CAIBE (Oxford Ion Mill))}}<br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Pt<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Other Dry Etching Recipes|Other Dry Etch (CAIBE (Oxford Ion Mill))}}<br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Ru<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|{{Rl|ICP Etching Recipes|Ru (Ruthenium) Etch (Panasonic 2)}}<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|- bgcolor="#eeffff"<br />
! bgcolor="#d0e7ff" align="center" |Si<br />
|<br />
|<br />
|<br />
|{{rl|ICP Etching Recipes|DSEIII_(PlasmaTherm/Deep_Silicon_Etcher)}}<br />
|{{Rl|ICP Etching Recipes|Si Etching}}<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Other Dry Etching Recipes|Other Dry Etch (XeF2 Etcher)}}<br />
|<br />
|A<br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Ta<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Ti<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|ICP Etching Recipes|Ti Etch (Panasonic 1)}}<br />
|A<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Al<sub>2</sub>O<sub>3</sub><br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|[https://wiki.nanotech.ucsb.edu/wiki/index.php/ICP_Etching_Recipes#Al2O3_Etching_.28Panasonic_2.29 R]<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|- bgcolor="#eeffff"<br />
! bgcolor="#d0e7ff" align="center" |Al<sub>2</sub>O<sub>3 (Sapphire)</sub><br />
|<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|ICP Etching Recipes|Sapphire Etch (Panasonic 1)}}<br />
|A<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|-<br />
! bgcolor="#d0e7ff" align="center" |AlGaAs<br />
|<br />
|<br />
|{{rl|RIE Etching Recipes|AlGaAs\GaAs Etching (RIE 5)}}<br />
|<br />
|<br />
|{{rl|ICP Etching Recipes|AlGaAs Etch (Panasonic 1)}}<br />
|<br />
|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|GaAs-AlGaAs Etch (Unaxis VLR)|AlGaAs Etch (Unaxis VLR)}}<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|- bgcolor="#eeffff"<br />
! bgcolor="#d0e7ff" align="center" |AlGaN<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|ICP Etching Recipes|GaN Etch (Unaxis VLR)}}<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|-<br />
! bgcolor="#d0e7ff" align="center" |AlN<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|ICP Etching Recipes|GaN Etch (Unaxis VLR)}}<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|- bgcolor="#eeffff"<br />
! bgcolor="#d0e7ff" align="center" |CdZnTe<br />
|{{rl|RIE Etching Recipes|CdZnTe Etch (RIE 2)}}<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|- bgcolor="#eeffff"<br />
! bgcolor="#d0e7ff" align="center" |GaAs<br />
|<br />
|<br />
|{{rl|RIE Etching Recipes|AlGaAs\GaAs Etching (RIE 5)}}<br />
|<br />
|<br />
|{{rl|ICP Etching Recipes|GaAs-AlGaAs_Etch_.28Panasonic_1.29}}<br />
|{{rl|ICP Etching Recipes|GaAs Etch (Panasonic 2)}}<br />
|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|GaAs-AlGaAs Etch (Unaxis VLR)|GaAs Etch (Unaxis VLR)}}<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|-<br />
! bgcolor="#d0e7ff" align="center" |GaN<br />
|<br />
|<br />
|{{rl|RIE Etching Recipes|GaN Etching (RIE 5)}}<br />
|<br />
|<br />
|{{rl|ICP Etching Recipes|GaN Etch (Panasonic 1)}}<br />
|<br />
|{{rl|ICP Etching Recipes|GaN Etch (Unaxis VLR)}}<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|- bgcolor="#eeffff"<br />
! bgcolor="#d0e7ff" align="center" |GaSb<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|GaSb Etch Unaxis VLR)}}<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|- bgcolor="#eeffff"<br />
! bgcolor="#d0e7ff" align="center" |HfO<sub>2</sub><br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|- bgcolor="#eeffff"<br />
! bgcolor="#d0e7ff" align="center" |InGaAlAs<br />
|{{rl|RIE Etching Recipes|RIE 2 (MRC)|InP-InGaAsP-InGaAlAs Etching (RIE 2)|InP Etch (RIE 2)}}<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|InP-InGaAs-InAlAs Etch (Unaxis VLR)|InP Etch (Unaxis VLR)}}<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|-<br />
! bgcolor="#d0e7ff" align="center" |InGaAsP<br />
|{{rl|RIE Etching Recipes|RIE 2 (MRC)|InP-InGaAsP-InGaAlAs Etching (RIE 2)|InP Etch (RIE 2)}}<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|InP-InGaAs-InAlAs Etch (Unaxis VLR)|InP Etch (Unaxis VLR)}}<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|- bgcolor="#eeffff"<br />
! bgcolor="#d0e7ff" align="center" |InP<br />
|{{rl|RIE Etching Recipes|RIE 2 (MRC)|InP-InGaAsP-InGaAlAs Etching (RIE 2)|InP Etch (RIE 2)}}<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|A<br />
|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|InP-InGaAs-InAlAs Etch (Unaxis VLR)|InP Etch (Unaxis VLR)}}<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Other Dry Etching Recipes|Other Dry Etch (CAIBE (Oxford Ion Mill))}}<br />
|-<br />
! bgcolor="#d0e7ff" align="center" |ITO<br />
|{{rl|RIE Etching Recipes|ITO Etch (RIE 2)}}<br />
|<br />
|<br />
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|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|- bgcolor="#eeffff"<br />
!Photoresist<br />
& ARC<br />
|<br />
|A<br />
|[https://wiki.nanotech.ucsb.edu/wiki/index.php/RIE_Etching_Recipes#Photoresist_and_ARC R]<br />
|<br />
|<br />
|[https://wiki.nanotech.ucsb.edu/wiki/index.php/ICP_Etching_Recipes#Photoresist_and_ARC_Etching R]<br />
|[https://wiki.nanotech.ucsb.edu/wiki/index.php/ICP_Etching_Recipes#Photoresist_and_ARC_etching_2 R]<br />
|<br />
|A<br />
|A<br />
|A<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|-<br />
! bgcolor="#d0e7ff" align="center" |SiC<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|ICP Etching Recipes|SiC Etch (Panasonic 1)}}<br />
|A<br />
|<br />
|<br />
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|<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|-<br />
! bgcolor="#d0e7ff" align="center" |SiN<br />
|<br />
|{{rl|RIE Etching Recipes|RIE 3 (MRC)|SiN<sub>x</sub> Etching (RIE 3)}}<br />
|<br />
|<br />
|<br />
|{{rl|ICP Etching Recipes|SiNx Etching (Panasonic 1)}}<br />
|{{rl|ICP Etching Recipes|SiNx Etching (Panasonic 2)}}<br />
|<br />
|A<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|- bgcolor="#eeffff"<br />
! bgcolor="#d0e7ff" align="center" |SiO<sub>2</sub><br />
|<br />
|{{rl|RIE Etching Recipes|RIE 3 (MRC)|SiO<sub>2</sub> Etching (RIE 3)}}<br />
|<br />
|<br />
|{{rl|ICP Etching Recipes|SiO2 Etching (Fluorine ICP Etcher)}}<br />
|{{rl|ICP Etching Recipes|SiO2 Etching (Panasonic 1)}}<br />
|{{rl|ICP Etching Recipes|SiO2 Etching (Panasonic 2)}}<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Other Dry Etching Recipes|Other Dry Etch (Vapor HF Etcher)}}<br />
|A<br />
|- bgcolor="#eeffff"<br />
! bgcolor="#d0e7ff" align="center" |SiOxNy<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|A<br />
|<br />
|<br />
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|<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Ta<sub>2</sub>O<sub>5</sub><br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|[https://www.osapublishing.org/optica/abstract.cfm?uri=optica-4-5-532 A]<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|-<br />
! bgcolor="#d0e7ff" align="center" |TiN<br />
|<br />
|<br />
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|<br />
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|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|- bgcolor="#eeffff"<br />
! bgcolor="#d0e7ff" align="center" |TiO<sub>2</sub><br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|- bgcolor="#eeffff"<br />
! bgcolor="#d0e7ff" align="center" |W-TiW<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|ICP Etching Recipes|W-TiW Etch (Panasonic 1)}}<br />
|A<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|- bgcolor="#eeffff"<br />
! bgcolor="#d0e7ff" align="center" |ZnO<sub>2</sub><br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|-<br />
! bgcolor="#d0e7ff" align="center" |ZnS<br />
|{{rl|RIE Etching Recipes|ZnS Etching (RIE 2)}}<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|-<br />
! bgcolor="#d0e7ff" align="center" |ZnSe<br />
|{{rl|RIE Etching Recipes|ZnS Etching (RIE 2)}}<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|-<br />
! bgcolor="#d0e7ff" align="center" |ZrO<sub>2</sub><br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
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|<br />
|<br />
|<br />
|A<br />
|-<br />
! bgcolor="#d0e7ff" align="center" |'''Material'''<br />
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_2_.28MRC.29|RIE 2<br> (MRC)]]<br />
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_3_.28MRC.29|RIE 3<br> (MRC)]]<br />
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_5_.28PlasmaTherm.29|RIE 5<br>(PlasmaTherm)]]<br />
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#DSEIII_.28PlasmaTherm.2FDeep_Silicon_Etcher.29|DSEIII<br>(PlasmaTherm)]]<br />
| bgcolor="#daf1ff" |[[Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)|SLR Fluorine ICP (PlasmaTherm)]]<br />
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#ICP_Etch_1_.28Panasonic_E626I.29|ICP Etch 1<br>(Panasonic E626I)]]<br />
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#ICP_Etch_2_.28Panasonic_E640.29|ICP Etch 2<br>(Panasonic E640)]]<br />
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#ICP-Etch_.28Unaxis_VLR.29|ICP-Etch<br>(Unaxis VLR)]]<br />
| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Ashers_.28Technics_PEII.29|Ashers<br>(Technics PEII)]]<br />
| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Plasma_Clean_.28Gasonics_2000.29|Plasma Clean<br>(Gasonics 2000)]]<br />
| width="95" bgcolor="#daf1ff" |[[Oxygen Plasma System Recipes#Plasma Clean .28YES EcoClean.29|Plasma Clean (YES EcoClean)]]<br />
| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#UV_Ozone_Reactor|UV Ozone Reactor]]<br />
| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Plasma_Activation_.28EVG_810.29|Plasma Activation<br>(EVG 810)]]<br />
| bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#XeF2_Etch_.28Xetch.29|XeF2 Etch<br>(Xetch)]]<br />
| bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#Vapor_HF_Etch_.28uETCH.29|Vapor HF Etch<br>(uETCH)]]<br />
| bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#CAIBE_.28Oxford_Ion_Mill.29|CAIBE<br>(Oxford)]]<br />
|}<br />
<br />
[[Category:Processing]]</div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=Test_Data_of_Etching_SiO2_with_CHF3/CF4-Fluorine_ICP_Etcher&diff=158759
Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher
2021-02-04T23:16:55Z
<p>Ningcao: </p>
<hr />
<div>{| class="wikitable"<br />
| colspan="6" |Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec<br />
|-<br />
|Date<br />
|Sample#<br />
|Etch Rate (nm/min)<br />
|Etch Selectivity (SiO2/PR)<br />
|Averaged Sidewall Angle (<sup>o</sup>)<br />
|SEM Images<br />
|-<br />
|1/28/2021<br />
|FE2102<br />
|309<br />
|0.99<br />
|<br />
|[https://wiki.nanotech.ucsb.edu/w/images/0/0b/FE210206.pdf]<br />
|}</div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=Test_Data_of_Etching_SiO2_with_CHF3/CF4-Fluorine_ICP_Etcher&diff=158758
Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher
2021-02-04T23:14:34Z
<p>Ningcao: Created page with "{| class="wikitable" | colspan="6" |Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec |- |Date |Sample# |Etch Rate (nm/min) |Etch Selectivity (SiO2/PR) |Average..."</p>
<hr />
<div>{| class="wikitable"<br />
| colspan="6" |Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec<br />
|-<br />
|Date<br />
|Sample#<br />
|Etch Rate (nm/min)<br />
|Etch Selectivity (SiO2/PR)<br />
|Averaged Sidewall Angle (<sup>o</sup>)<br />
|SEM Images<br />
|-<br />
|1/28/2021<br />
|FE2102<br />
|309<br />
|0.99<br />
|<br />
|<br />
|}</div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=ICP_Etching_Recipes&diff=158757
ICP Etching Recipes
2021-02-04T23:12:07Z
<p>Ningcao: /* SiO2 Etch Historical Data */</p>
<hr />
<div>{{recipes|Dry Etching}}<br />
<br />
=[[DSEIII_(PlasmaTherm/Deep_Silicon_Etcher)]]=<br />
<br />
== Edge-Bead Removal ==<br />
Make sure to remove photoresist from edges of wafer, or PR may stick to the top-side wafer clamp and destroy your wafer during unload!<br />
* [[ASML DUV: Edge Bead Removal via Photolithography|Edge Bead Removal via Photolithography]]: use a custom metal mask to pattern the photoresist with a flood exposure.<br />
** If you are etching fully through a wafer, remember that removal of edge-bead will cause full etching in the exposed areas. To prevent a wafer from falling into the machine after the etch, you can [[Packaging Recipes#Wafer Bonder .28Logitech WBS7.29|mount to a carrier wafer using wax]].<br />
<br />
==High Rate Bosch Etch (DSEIII)==<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/4/4a/10-Si_Etch_Bosch_DSEIII.pdf Bosch Process Recipe and Characterization] - Standard recipe on the tool.<br />
**Recipe Name: "'''''Plasma-Therm Standard DSE'''''" (''Production'' - copy to your ''Personal'' category)<br />
**Standard [https://en.wikipedia.org/wiki/Deep_reactive-ion_etching#Bosch_process Bosch Process] for high aspect-ratio, high-selectivity Silicon etching. <br />
**Cycles between polymer deposition "Dep" / Polymer etch "Etch A" / Si etch "Etch B" steps. Step Times gives fine control.<br />
***To reduce roughening/grassing (black silicon), reduce Dep step time by ~20%.<br />
**Patterns with different etched areas will have different "optimal" parameters.<br />
**Approx Selectivity to Photoresist: 60-80 or better. Larger open area, lower selectivity and lower etch rate. <br />
<br />
==Single-Step Low Etch Rate Smooth Sidewall Process (DSEIII)==<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/8f/10-Si_Etch_Single_Step_Smooth_Sidewall_DSEIII.pdf Single Step Silicon Etch Recipe and Characterization]<br />
**Recipe Name: "'''''Nano Trench Etch'''''" (''Production'' - copy to your ''Personal'' category)<br />
**Used instead of Bosch Process, to avoid scalloping on the sidewall. <br />
**Lower selectivity, lower etch rate, smoother sidewalls.<br />
<br />
=[[Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)|PlasmaTherm/SLR Fluorine Etcher]]=<br />
==Si Etching (Fluorine ICP Etcher)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/b/b8/SLR_-_SiVertHF.pdf SiVertHF] - Si Vertical Etch using C<sub>4</sub>F<sub>8</sub>/SF<sub>6</sub>/CF<sub>4</sub> and resist mask<br />
**Etch Rates: Si ≈ 300-350 nm/min; SiO<sub>2</sub> ≈ 30-35 nm/min<br />
**89-90 degree etch angle, ie, vertical.<br />
**Due to high selectivity against SiO2, it may be necessary to run a ~10sec 50W SiO<sub>2</sub> etch (below) to remove native oxide on Si. This can be performed ''in situ'' before the Si etch.<br />
<br />
==SiO2 Etching (Fluorine ICP Etcher)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/w/images/f/f6/SiO2_Etch%2C_Ru_HardMask_-_Fluorine_ICP_Etch_Process_-_Ning_Cao_2019-06.pdf SiO2 Etching using Ruthenium Hardmask] - Full Process Traveler<br />
**''Ning Cao & Bill Mitchell, 2019-06''<br />
**''High-selectivity and deep etching using sputtered Ru hardmask and I-Line litho.''<br />
**''Variations in SiO<sub>2</sub> etch Bias Power: 50/200/400W bias.''<br />
**Ru etch selectivity to PR: 0.18 (less than 1): 150nm Ru / 800nm PR<br />
**SiO<sub>2</sub> selectivity to Ru: 40 for Bias=200W<br />
**SiO<sub>2</sub> etch rate: 450nn/min for Bias=200W<br />
<br />
==Historical Data (Fluorine ICP Etcher)==<br />
<br />
=== SiO2 Etch Historical Data ===<br />
*[[Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher|Test Data of Etching SiO<sub>2</sub> with CHF3/CF4-Fluorine ICP Etcher]]<br />
<br />
=[[ICP Etch 1 (Panasonic E626I)]]=<br />
==SiO<sub>2</sub> Etching (Panasonic 1)==<br />
<br />
=== Recipes ===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/3/3e/Panasonic1-SiO-Etch.pdf SiO<sub>2</sub> Vertical Etch Recipe Parameters - CHF<sub>3</sub> "SiOVert"]<br />
**Etch rate ≈ 2300Å/min (users must calibrate)<br />
**Selectivity (SiO2:Photoresist) ≈ greater than 1:1 (users must calibrate)<br />
<br />
===Historical Data (SiO2, Panasonic 1)===<br />
<br />
*[[Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Florine etch of the underneath layer)|Test Data of etching SiO2 with CHF3/CF4/O2]]<br />
*[[Test Data of etching SiO2 with CHF3/CF4-ICP1|Test Data of etching SiO2 with CHF3/CF4]]<br />
<br />
=== Recipe Variations ===<br />
''Use these to determine how each etch parameter affects the process.''<br />
<br />
* [//wiki.nanotech.ucsb.edu/wiki/images/5/5e/Panasonic1-SiO2-Data-Process-Variation-CHF3-revA.pdf SiO<sub>2</sub> CHF<sub>3</sub> Etch Variations] - CHF3 with varying Bias and Pressure, Slanted SiO2 etching<br />
<br />
==SiN<sub>x</sub> Etching (Panasonic 1)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/c/ce/Panasonic1-SiN-Etch-Plasma-CF4-O2-ICP-revA.pdf SiN<sub>x</sub> Etch Rates and Variations - CF<sub>4</sub>-O<sub>2</sub>]<br />
<br />
==Al Etch (Panasonic 1)==<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/3/3b/Panasonic-1-Al-Etch-RevA.pdf Al Etch Recipes - Cl<sub>2</sub>BCl<sub>3</sub>]<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/6/60/32-Reducing_AlCl3_Corrosion_with_CHF3_plasma.pdf AlCl<sub>3</sub> Erosion Issue and the Solution]<br />
<br />
==Cr Etch (Panasonic 1)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/88/Panasonic-1-Cr-Etch-revA.pdf Cr Etch Recipes - Cl<sub>2</sub>O<sub>2</sub>]<br />
<br />
==Ta Etch (Panasonic 1)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/f/f2/104_Ta_Etch.pdf Ta Etch Recipe] - Cl2/BCl3<br />
<br />
==Ti Etch (Panasonic 1)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/4/47/Panasonic-1-Ti-Etch-Deep-RevA.pdf Ti Deep Etch Recipes - Cl<sub>2</sub>Ar]<br />
**See [[doi:10.1149/1.2006647|E. Parker, ''et. al.'' Jnl. Electrochem. Soc., 152 (10) C675-C683 2005]].<br />
<br />
==W-TiW Etch (Panasonic 1)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/7/76/Panasonic1-TiW-W-Etch-Plasma-RIE-RevA.pdf Ti-TiW Etch Recipes - SF<sub>6</sub>Ar]<br />
<br />
==GaAs-AlGaAs Etch (Panasonic 1)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/b/bb/Panasonic1-GaAs-PhotonicCrystal-RIE-Plasma-Nanoscale-Etch-RevA.pdf GaAs-Nanoscale Etch Recipe - PR mask - Cl<sub>2</sub>-BCl<sub>3</sub>-Ar]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/2/26/12-Plasma_Etching_of_AlGaAs-Panasonic_ICP-1-Etcher.pdf AlGaAs Etch Recipes - Cl<sub>2</sub>N<sub>2</sub>]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/0/04/Panasonic1-GaAs-Via-Etch-Plasma-RIE-Fast-DRIE-RevA.pdf GaAs DRIE via Etch Recipes - Cl<sub>2</sub>-BCl<sub>3</sub>-Ar PR passivation]<br />
<br />
==GaN Etch (Panasonic 1)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/d/d6/07-GaN_Etch-Panasonic-ICP-1.pdf GaN Etch Recipes Cl<sub>2</sub>N<sub>2</sub>]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/6/60/Panasonic1-GaN-AlGaN-Selective-Etch-Plasma-RIE-ICP-RevA.pdf GaN Selective Etch over AlGaN Recipes BCl<sub>3</sub>-SF<sub>6</sub>]<br />
<br />
==Photoresist and ARC Etching==<br />
[https://wiki.nanotech.ucsb.edu/wiki/index.php/ICP_Etching_Recipes#Photoresist_and_ARC_etching_2 Please see the recipes for Panasonic ICP#2] - the same recipes apply. <br />
<br />
Etching of DUV42P at standard spin/bake parameters also completes in 45 seconds.<br />
<br />
==SiC Etch (Panasonic 1)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/d/d0/Panasonic_1-SiC-ICP-RIE-Etch-Plasma-SF6-RevA.pdf SiC Etch Recipes Ni Mask - SF<sub>6</sub>]<br />
<br />
==Sapphire Etch (Panasonic 1)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/3/3a/Panasonic1-sapphire-etch-RIE-Plasma-BCl3-ICP-RevA.pdf Sapphire Etch Recipes Ni and PR Mask - BCl<sub>3</sub>-Cl<sub>2</sub>]<br />
<br />
==Old Deleted Recipes==<br />
Since there are a limited number of recipe slots on the tool, we occasionally have to delete old, unused recipes.<br />
<br />
If you need to free up a recipe slot, please contact [[Don Freeborn|Don]] and he'll help you find an old recipe to replace. We take photographs of old recipes, and save them in case a group needs to revive the recipe. Contact us if your old recipe went missing.<br />
<br />
=[[ICP Etch 2 (Panasonic E640)]]=<br />
Recipes starting points for materials without processes listed can be obtained from Panasonic1 recipe files. The chambers are slightly different, but essentially the same, requiring only small program changes to obtain similar results.<br />
<br />
==SiO<sub>2</sub> Etching (Panasonic 2)==<br />
<br />
===Recipes===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/d/d5/Panasonic2-SiOx-Recipe.pdf SiO<sub>2</sub> Vertical Etch Recipe - CHF<sub>3</sub> "SiOVert"]<br />
**Direct copy of "SiOVert" from ICP#1, [[ICP_Etching_Recipes#SiO2_Etching_.28Panasonic_1.29|see parameters there]].<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/9/9e/33-Etching_SiO2_with_Vertical_Side-wall.pdf SiO<sub>2</sub> Vertical Etch Recipe#2 - CF<sub>4</sub>/CHF<sub>3</sub>]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/1/1e/Panasonic2-ICP-Plasma-Etch-SiO2-nanoscale-rev1.pdf SiO<sub>2</sub> Nanoscale Etch Recipe - CHF<sub>3</sub>/O<sub>2</sub>]<br />
<br />
===Historical Data (SiO2 Etch, Panasonic 2)===<br />
<br />
*[[Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Fluorine etch of the underneath layer)|Test Data of etching SiO2 with CHF3/CF4/O2]]<br />
*[[Test Data of etching SiO2 with CHF3/CF4]]<br />
<br />
===Recipe Variations===<br />
''Use these to determine how each etch parameter affects the process.''<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/1/1e/05-SiO2_Nano-structure_Etch.pdf Angled SiO2 sidewall recipe]<br />
<br />
==SiN<sub>x</sub> Etching (Panasonic 2)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/0/06/Panasonic2-ICP-Plasma-Etch-SiN-nanoscale-rev1.pdf SiN<sub>x</sub> Nanoscale Etch Recipe - CHF<sub>3</sub>/O<sub>2</sub>]<br />
<br />
==Al Etch (Panasonic 2)==<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/3/3b/Panasonic-1-Al-Etch-RevA.pdf Al Etch Recipes - use panasonic 1 parameters, etch rate 50% higher]<br />
<br />
==Al2O3 Etching (Panasonic 2)==<br />
[//wiki.nanotech.ucsb.edu/wiki/images/d/d2/Brian_Markman_-_Al2O3_ICP2_Etch_Rates_2018.pdf ALD Al2O3 Etch Rates in BCl3 Chemistry] (click for plots of etch rate)<br />
<br />
''Contributed by Brian Markman, 2018''<br />
<br />
*BCl3 = 30sccm<br />
*Pressure = 0.50 Pa<br />
*ICP Source RF = 500<br />
*Bias RF = 50W or 250W (250W can burn PR)<br />
*Cooling He Flow/Pressure = 15.0 sccm / 400 Pa<br />
*Etch Rate 50W: 0.66nm/sec<br />
*Etch Rate 250W: 1.0 nm/sec<br />
<br />
==GaAs Etch (Panasonic 2)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/f/ff/16-GaAs_etch-ICP-2.pdf GaAs Etch Recipes - Panasonic 2 - Cl<sub>2</sub>N<sub>2</sub>]<br />
<br />
==Photoresist and ARC etching==<br />
Basic recipes for etching photoresist and Bottom Anti-Reflection Coating (BARC) underlayers are as follows:<br />
<br />
===ARC Etching: DUV-42P or AR6===<br />
<br />
*O2 = 40 sccm // 0.5 Pa<br />
*ICP = 75W // RF = 75W<br />
*45 sec for full etching of DUV-42P (same as for AR6; 2018-2019, [[Demis D. John|Demis]]/[[Brian Thibeault|BrianT]])<br />
<br />
===UV6-0.8 Etching===<br />
Works very well for photoresist stripping<br />
<br />
*O2 = 40 sccm // 1.0 Pa<br />
*ICP = 350W // RF = 100W<br />
*Etch Rate = 518.5nm / 1min (2019, [[Demis D. John|Demis]])<br />
*2m30sec to fully remove with ~200% overetch<br />
<br />
==Ru (Ruthenium) Etch (Panasonic 2)==<br />
TALK TO BILL BEFORE PUBLISHING WORK USING THIS ETCH. We are currently writing a paper on this etch.<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/e/e9/194_Ru_Etch_O2%2CCl2.pdf Ru Etch] - ''[[Bill Mitchell]] 2019-09-19''<br />
**''BillM is currently writing a publication on this etch - please discuss with [[Bill Mitchell|Bill]] before submitting any publications using this etch.''<br />
<br />
=[[ICP-Etch (Unaxis VLR)]]=<br />
==GaAs-AlGaAs Etch (Unaxis VLR)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/4/4e/15-GaAs_etch-Unaxis_ICP_etcher.pdf GaAs Etch Recipe (Cl<sub>2</sub>N<sub>2</sub> 30C)]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/1/1f/14-AlAs-GR-cal_etch-Unaxis_ICP_etcher.pdf AlGaAs Etch Recipe (Cl<sub>2</sub>N<sub>2</sub> 30C)]<br />
<br />
==InP-InGaAs-InAlAs Etch (Unaxis VLR)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/9/90/18-InP-based_etching-Cl2N2Ar.pdf InP-based Material Etch Profile (Cl<sub>2</sub>N<sub>2</sub>Ar200C)]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/a/ad/17-InP%26InGaAs_etch-Cl2H2Ar-Unaxis-VLR.pdf InP-InGaAs Etch Profile (Cl<sub>2</sub>H<sub>2</sub>Ar 200C)]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/6/6e/SiO2-Mask_Etch_Recipe_for_Unaxis_Cl2_Etch.pdf Recipe of Etching SiO<sub>2</sub> Mask for Cl<sub>2</sub> Etch (ICP#2)]<br />
*[[InP Etch Test Result in Details|InP Etch Historical Data (Cl<sub>2</sub>H<sub>2</sub>Ar 200C)]]<br />
*[[InP Etch Rate and Selectivity (InP/SiO2)|InP Etch Test]]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/a/ac/Lower-Etch-Rate_InP_Etch_using_Unaxis_PM1_tool_at_200_C.pdf Lower etch-rate InP Etch (Cl<sub>2</sub>N<sub>2</sub> 200C)]<br />
<br />
==GaN Etch (Unaxis VLR)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/d/df/09-Plasma_Etching_of_GaN-UnaxisPM1.pdf GaN Etch Recipe (Cl<sub>2</sub>BCl<sub>3</sub>N<sub>2</sub>Ar 85C)]<br />
<br />
==GaSb Etch (Unaxis VLR)==<br />
<br />
<br />
=[[Si Deep RIE (PlasmaTherm/Bosch Etch)]]=<br />
'''This tool does not exist in this configuration any more, so these recipes are for Reference purposes Only!!!'''<br />
The machine was upgraded to be the new Plasma-Therm Fluorine ICP Etcher - the chamber configuration is now different, making these recipes invalid.<br />
For Deep Silicon Etching, the Plasma-Therm DSE-iii is often used. Some single-step Silicon etching is still performed on the SLR Fluorine ICP, due to the slower etch rate.<br />
<br />
==Bosch and Release Etch (Si Deep RIE)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/0/02/10-Si_Etch_Bosch_Release_DRIE.pdf Bosch and Release Processes]<br />
**Ideal for deep (>>1µm), vertical etching of Silicon. Through-wafer etches are possible (requires carrier wafer).<br />
**Etch rate depends on area of exposed silicon being etched.<br />
**Al<sub>2</sub>O<sub>3</sub> mask (ALD or Sputter) has >9000:1 selectivity<br />
**SiO<sub>2</sub> (PECVD) mask has ~100:1 selectivity<br />
**Thermal SiO<sub>2</sub> has ~300:1 selectivity.<br />
<br />
==Single-step Si Etching (not Bosch Process!) (Si Deep RIE)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/d/d2/10-Si_Etch_using_DRIE_%28single-step%29.pdf Single-step Si Vertical Etch Recipe - SF<sub>6</sub>-C<sub>4</sub>F<sub>8</sub>-Ar]</div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=ICP_Etching_Recipes&diff=158756
ICP Etching Recipes
2021-02-04T23:07:33Z
<p>Ningcao: /* SiO2 Etch Historical Data */</p>
<hr />
<div>{{recipes|Dry Etching}}<br />
<br />
=[[DSEIII_(PlasmaTherm/Deep_Silicon_Etcher)]]=<br />
<br />
== Edge-Bead Removal ==<br />
Make sure to remove photoresist from edges of wafer, or PR may stick to the top-side wafer clamp and destroy your wafer during unload!<br />
* [[ASML DUV: Edge Bead Removal via Photolithography|Edge Bead Removal via Photolithography]]: use a custom metal mask to pattern the photoresist with a flood exposure.<br />
** If you are etching fully through a wafer, remember that removal of edge-bead will cause full etching in the exposed areas. To prevent a wafer from falling into the machine after the etch, you can [[Packaging Recipes#Wafer Bonder .28Logitech WBS7.29|mount to a carrier wafer using wax]].<br />
<br />
==High Rate Bosch Etch (DSEIII)==<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/4/4a/10-Si_Etch_Bosch_DSEIII.pdf Bosch Process Recipe and Characterization] - Standard recipe on the tool.<br />
**Recipe Name: "'''''Plasma-Therm Standard DSE'''''" (''Production'' - copy to your ''Personal'' category)<br />
**Standard [https://en.wikipedia.org/wiki/Deep_reactive-ion_etching#Bosch_process Bosch Process] for high aspect-ratio, high-selectivity Silicon etching. <br />
**Cycles between polymer deposition "Dep" / Polymer etch "Etch A" / Si etch "Etch B" steps. Step Times gives fine control.<br />
***To reduce roughening/grassing (black silicon), reduce Dep step time by ~20%.<br />
**Patterns with different etched areas will have different "optimal" parameters.<br />
**Approx Selectivity to Photoresist: 60-80 or better. Larger open area, lower selectivity and lower etch rate. <br />
<br />
==Single-Step Low Etch Rate Smooth Sidewall Process (DSEIII)==<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/8f/10-Si_Etch_Single_Step_Smooth_Sidewall_DSEIII.pdf Single Step Silicon Etch Recipe and Characterization]<br />
**Recipe Name: "'''''Nano Trench Etch'''''" (''Production'' - copy to your ''Personal'' category)<br />
**Used instead of Bosch Process, to avoid scalloping on the sidewall. <br />
**Lower selectivity, lower etch rate, smoother sidewalls.<br />
<br />
=[[Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)|PlasmaTherm/SLR Fluorine Etcher]]=<br />
==Si Etching (Fluorine ICP Etcher)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/b/b8/SLR_-_SiVertHF.pdf SiVertHF] - Si Vertical Etch using C<sub>4</sub>F<sub>8</sub>/SF<sub>6</sub>/CF<sub>4</sub> and resist mask<br />
**Etch Rates: Si ≈ 300-350 nm/min; SiO<sub>2</sub> ≈ 30-35 nm/min<br />
**89-90 degree etch angle, ie, vertical.<br />
**Due to high selectivity against SiO2, it may be necessary to run a ~10sec 50W SiO<sub>2</sub> etch (below) to remove native oxide on Si. This can be performed ''in situ'' before the Si etch.<br />
<br />
==SiO2 Etching (Fluorine ICP Etcher)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/w/images/f/f6/SiO2_Etch%2C_Ru_HardMask_-_Fluorine_ICP_Etch_Process_-_Ning_Cao_2019-06.pdf SiO2 Etching using Ruthenium Hardmask] - Full Process Traveler<br />
**''Ning Cao & Bill Mitchell, 2019-06''<br />
**''High-selectivity and deep etching using sputtered Ru hardmask and I-Line litho.''<br />
**''Variations in SiO<sub>2</sub> etch Bias Power: 50/200/400W bias.''<br />
**Ru etch selectivity to PR: 0.18 (less than 1): 150nm Ru / 800nm PR<br />
**SiO<sub>2</sub> selectivity to Ru: 40 for Bias=200W<br />
**SiO<sub>2</sub> etch rate: 450nn/min for Bias=200W<br />
<br />
==Historical Data (Fluorine ICP Etcher)==<br />
<br />
=== SiO2 Etch Historical Data ===<br />
*[[Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher|Test Data of Etching SiO<sub>2</sub> with CHF3/CF4-Florine ICP Etcher]]<br />
<br />
=[[ICP Etch 1 (Panasonic E626I)]]=<br />
==SiO<sub>2</sub> Etching (Panasonic 1)==<br />
<br />
=== Recipes ===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/3/3e/Panasonic1-SiO-Etch.pdf SiO<sub>2</sub> Vertical Etch Recipe Parameters - CHF<sub>3</sub> "SiOVert"]<br />
**Etch rate ≈ 2300Å/min (users must calibrate)<br />
**Selectivity (SiO2:Photoresist) ≈ greater than 1:1 (users must calibrate)<br />
<br />
===Historical Data (SiO2, Panasonic 1)===<br />
<br />
*[[Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Florine etch of the underneath layer)|Test Data of etching SiO2 with CHF3/CF4/O2]]<br />
*[[Test Data of etching SiO2 with CHF3/CF4-ICP1|Test Data of etching SiO2 with CHF3/CF4]]<br />
<br />
=== Recipe Variations ===<br />
''Use these to determine how each etch parameter affects the process.''<br />
<br />
* [//wiki.nanotech.ucsb.edu/wiki/images/5/5e/Panasonic1-SiO2-Data-Process-Variation-CHF3-revA.pdf SiO<sub>2</sub> CHF<sub>3</sub> Etch Variations] - CHF3 with varying Bias and Pressure, Slanted SiO2 etching<br />
<br />
==SiN<sub>x</sub> Etching (Panasonic 1)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/c/ce/Panasonic1-SiN-Etch-Plasma-CF4-O2-ICP-revA.pdf SiN<sub>x</sub> Etch Rates and Variations - CF<sub>4</sub>-O<sub>2</sub>]<br />
<br />
==Al Etch (Panasonic 1)==<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/3/3b/Panasonic-1-Al-Etch-RevA.pdf Al Etch Recipes - Cl<sub>2</sub>BCl<sub>3</sub>]<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/6/60/32-Reducing_AlCl3_Corrosion_with_CHF3_plasma.pdf AlCl<sub>3</sub> Erosion Issue and the Solution]<br />
<br />
==Cr Etch (Panasonic 1)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/88/Panasonic-1-Cr-Etch-revA.pdf Cr Etch Recipes - Cl<sub>2</sub>O<sub>2</sub>]<br />
<br />
==Ta Etch (Panasonic 1)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/f/f2/104_Ta_Etch.pdf Ta Etch Recipe] - Cl2/BCl3<br />
<br />
==Ti Etch (Panasonic 1)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/4/47/Panasonic-1-Ti-Etch-Deep-RevA.pdf Ti Deep Etch Recipes - Cl<sub>2</sub>Ar]<br />
**See [[doi:10.1149/1.2006647|E. Parker, ''et. al.'' Jnl. Electrochem. Soc., 152 (10) C675-C683 2005]].<br />
<br />
==W-TiW Etch (Panasonic 1)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/7/76/Panasonic1-TiW-W-Etch-Plasma-RIE-RevA.pdf Ti-TiW Etch Recipes - SF<sub>6</sub>Ar]<br />
<br />
==GaAs-AlGaAs Etch (Panasonic 1)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/b/bb/Panasonic1-GaAs-PhotonicCrystal-RIE-Plasma-Nanoscale-Etch-RevA.pdf GaAs-Nanoscale Etch Recipe - PR mask - Cl<sub>2</sub>-BCl<sub>3</sub>-Ar]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/2/26/12-Plasma_Etching_of_AlGaAs-Panasonic_ICP-1-Etcher.pdf AlGaAs Etch Recipes - Cl<sub>2</sub>N<sub>2</sub>]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/0/04/Panasonic1-GaAs-Via-Etch-Plasma-RIE-Fast-DRIE-RevA.pdf GaAs DRIE via Etch Recipes - Cl<sub>2</sub>-BCl<sub>3</sub>-Ar PR passivation]<br />
<br />
==GaN Etch (Panasonic 1)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/d/d6/07-GaN_Etch-Panasonic-ICP-1.pdf GaN Etch Recipes Cl<sub>2</sub>N<sub>2</sub>]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/6/60/Panasonic1-GaN-AlGaN-Selective-Etch-Plasma-RIE-ICP-RevA.pdf GaN Selective Etch over AlGaN Recipes BCl<sub>3</sub>-SF<sub>6</sub>]<br />
<br />
==Photoresist and ARC Etching==<br />
[https://wiki.nanotech.ucsb.edu/wiki/index.php/ICP_Etching_Recipes#Photoresist_and_ARC_etching_2 Please see the recipes for Panasonic ICP#2] - the same recipes apply. <br />
<br />
Etching of DUV42P at standard spin/bake parameters also completes in 45 seconds.<br />
<br />
==SiC Etch (Panasonic 1)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/d/d0/Panasonic_1-SiC-ICP-RIE-Etch-Plasma-SF6-RevA.pdf SiC Etch Recipes Ni Mask - SF<sub>6</sub>]<br />
<br />
==Sapphire Etch (Panasonic 1)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/3/3a/Panasonic1-sapphire-etch-RIE-Plasma-BCl3-ICP-RevA.pdf Sapphire Etch Recipes Ni and PR Mask - BCl<sub>3</sub>-Cl<sub>2</sub>]<br />
<br />
==Old Deleted Recipes==<br />
Since there are a limited number of recipe slots on the tool, we occasionally have to delete old, unused recipes.<br />
<br />
If you need to free up a recipe slot, please contact [[Don Freeborn|Don]] and he'll help you find an old recipe to replace. We take photographs of old recipes, and save them in case a group needs to revive the recipe. Contact us if your old recipe went missing.<br />
<br />
=[[ICP Etch 2 (Panasonic E640)]]=<br />
Recipes starting points for materials without processes listed can be obtained from Panasonic1 recipe files. The chambers are slightly different, but essentially the same, requiring only small program changes to obtain similar results.<br />
<br />
==SiO<sub>2</sub> Etching (Panasonic 2)==<br />
<br />
===Recipes===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/d/d5/Panasonic2-SiOx-Recipe.pdf SiO<sub>2</sub> Vertical Etch Recipe - CHF<sub>3</sub> "SiOVert"]<br />
**Direct copy of "SiOVert" from ICP#1, [[ICP_Etching_Recipes#SiO2_Etching_.28Panasonic_1.29|see parameters there]].<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/9/9e/33-Etching_SiO2_with_Vertical_Side-wall.pdf SiO<sub>2</sub> Vertical Etch Recipe#2 - CF<sub>4</sub>/CHF<sub>3</sub>]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/1/1e/Panasonic2-ICP-Plasma-Etch-SiO2-nanoscale-rev1.pdf SiO<sub>2</sub> Nanoscale Etch Recipe - CHF<sub>3</sub>/O<sub>2</sub>]<br />
<br />
===Historical Data (SiO2 Etch, Panasonic 2)===<br />
<br />
*[[Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Fluorine etch of the underneath layer)|Test Data of etching SiO2 with CHF3/CF4/O2]]<br />
*[[Test Data of etching SiO2 with CHF3/CF4]]<br />
<br />
===Recipe Variations===<br />
''Use these to determine how each etch parameter affects the process.''<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/1/1e/05-SiO2_Nano-structure_Etch.pdf Angled SiO2 sidewall recipe]<br />
<br />
==SiN<sub>x</sub> Etching (Panasonic 2)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/0/06/Panasonic2-ICP-Plasma-Etch-SiN-nanoscale-rev1.pdf SiN<sub>x</sub> Nanoscale Etch Recipe - CHF<sub>3</sub>/O<sub>2</sub>]<br />
<br />
==Al Etch (Panasonic 2)==<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/3/3b/Panasonic-1-Al-Etch-RevA.pdf Al Etch Recipes - use panasonic 1 parameters, etch rate 50% higher]<br />
<br />
==Al2O3 Etching (Panasonic 2)==<br />
[//wiki.nanotech.ucsb.edu/wiki/images/d/d2/Brian_Markman_-_Al2O3_ICP2_Etch_Rates_2018.pdf ALD Al2O3 Etch Rates in BCl3 Chemistry] (click for plots of etch rate)<br />
<br />
''Contributed by Brian Markman, 2018''<br />
<br />
*BCl3 = 30sccm<br />
*Pressure = 0.50 Pa<br />
*ICP Source RF = 500<br />
*Bias RF = 50W or 250W (250W can burn PR)<br />
*Cooling He Flow/Pressure = 15.0 sccm / 400 Pa<br />
*Etch Rate 50W: 0.66nm/sec<br />
*Etch Rate 250W: 1.0 nm/sec<br />
<br />
==GaAs Etch (Panasonic 2)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/f/ff/16-GaAs_etch-ICP-2.pdf GaAs Etch Recipes - Panasonic 2 - Cl<sub>2</sub>N<sub>2</sub>]<br />
<br />
==Photoresist and ARC etching==<br />
Basic recipes for etching photoresist and Bottom Anti-Reflection Coating (BARC) underlayers are as follows:<br />
<br />
===ARC Etching: DUV-42P or AR6===<br />
<br />
*O2 = 40 sccm // 0.5 Pa<br />
*ICP = 75W // RF = 75W<br />
*45 sec for full etching of DUV-42P (same as for AR6; 2018-2019, [[Demis D. John|Demis]]/[[Brian Thibeault|BrianT]])<br />
<br />
===UV6-0.8 Etching===<br />
Works very well for photoresist stripping<br />
<br />
*O2 = 40 sccm // 1.0 Pa<br />
*ICP = 350W // RF = 100W<br />
*Etch Rate = 518.5nm / 1min (2019, [[Demis D. John|Demis]])<br />
*2m30sec to fully remove with ~200% overetch<br />
<br />
==Ru (Ruthenium) Etch (Panasonic 2)==<br />
TALK TO BILL BEFORE PUBLISHING WORK USING THIS ETCH. We are currently writing a paper on this etch.<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/e/e9/194_Ru_Etch_O2%2CCl2.pdf Ru Etch] - ''[[Bill Mitchell]] 2019-09-19''<br />
**''BillM is currently writing a publication on this etch - please discuss with [[Bill Mitchell|Bill]] before submitting any publications using this etch.''<br />
<br />
=[[ICP-Etch (Unaxis VLR)]]=<br />
==GaAs-AlGaAs Etch (Unaxis VLR)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/4/4e/15-GaAs_etch-Unaxis_ICP_etcher.pdf GaAs Etch Recipe (Cl<sub>2</sub>N<sub>2</sub> 30C)]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/1/1f/14-AlAs-GR-cal_etch-Unaxis_ICP_etcher.pdf AlGaAs Etch Recipe (Cl<sub>2</sub>N<sub>2</sub> 30C)]<br />
<br />
==InP-InGaAs-InAlAs Etch (Unaxis VLR)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/9/90/18-InP-based_etching-Cl2N2Ar.pdf InP-based Material Etch Profile (Cl<sub>2</sub>N<sub>2</sub>Ar200C)]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/a/ad/17-InP%26InGaAs_etch-Cl2H2Ar-Unaxis-VLR.pdf InP-InGaAs Etch Profile (Cl<sub>2</sub>H<sub>2</sub>Ar 200C)]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/6/6e/SiO2-Mask_Etch_Recipe_for_Unaxis_Cl2_Etch.pdf Recipe of Etching SiO<sub>2</sub> Mask for Cl<sub>2</sub> Etch (ICP#2)]<br />
*[[InP Etch Test Result in Details|InP Etch Historical Data (Cl<sub>2</sub>H<sub>2</sub>Ar 200C)]]<br />
*[[InP Etch Rate and Selectivity (InP/SiO2)|InP Etch Test]]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/a/ac/Lower-Etch-Rate_InP_Etch_using_Unaxis_PM1_tool_at_200_C.pdf Lower etch-rate InP Etch (Cl<sub>2</sub>N<sub>2</sub> 200C)]<br />
<br />
==GaN Etch (Unaxis VLR)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/d/df/09-Plasma_Etching_of_GaN-UnaxisPM1.pdf GaN Etch Recipe (Cl<sub>2</sub>BCl<sub>3</sub>N<sub>2</sub>Ar 85C)]<br />
<br />
==GaSb Etch (Unaxis VLR)==<br />
<br />
<br />
=[[Si Deep RIE (PlasmaTherm/Bosch Etch)]]=<br />
'''This tool does not exist in this configuration any more, so these recipes are for Reference purposes Only!!!'''<br />
The machine was upgraded to be the new Plasma-Therm Fluorine ICP Etcher - the chamber configuration is now different, making these recipes invalid.<br />
For Deep Silicon Etching, the Plasma-Therm DSE-iii is often used. Some single-step Silicon etching is still performed on the SLR Fluorine ICP, due to the slower etch rate.<br />
<br />
==Bosch and Release Etch (Si Deep RIE)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/0/02/10-Si_Etch_Bosch_Release_DRIE.pdf Bosch and Release Processes]<br />
**Ideal for deep (>>1µm), vertical etching of Silicon. Through-wafer etches are possible (requires carrier wafer).<br />
**Etch rate depends on area of exposed silicon being etched.<br />
**Al<sub>2</sub>O<sub>3</sub> mask (ALD or Sputter) has >9000:1 selectivity<br />
**SiO<sub>2</sub> (PECVD) mask has ~100:1 selectivity<br />
**Thermal SiO<sub>2</sub> has ~300:1 selectivity.<br />
<br />
==Single-step Si Etching (not Bosch Process!) (Si Deep RIE)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/d/d2/10-Si_Etch_using_DRIE_%28single-step%29.pdf Single-step Si Vertical Etch Recipe - SF<sub>6</sub>-C<sub>4</sub>F<sub>8</sub>-Ar]</div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=InP_Etch_Rate_and_Selectivity_(InP/SiO2)&diff=158755
InP Etch Rate and Selectivity (InP/SiO2)
2021-02-04T01:33:39Z
<p>Ningcao: add another pic</p>
<hr />
<div>{| class="wikitable"<br />
| colspan="4" |1.4 mT, 125/800W, Cl2/H2/Ar flow-rate=6.3/12.7/2 sccm, chuck temperature=200 C, and etch time=90s (Prior to the etch, do O2 plasma chamber clean for 15 minutes, then, chamber coating with the same recipe and a quarter dummy InP on carrier for 15 minutes.<br />
|<br />
|-<br />
|Date <br />
|Sample#<br />
|InP Etch Rate (um/min)<br />
|Selectivity (InP/SiO2)<br />
|Profile SEM Picture<br />
|-<br />
|10/4/2016<br />
|InP#1613<br />
|0.92<br />
|8.9<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/9/9b/IP161332.pdf]<br />
|-<br />
|12/1/2016<br />
|InP#1614<br />
|0.96<br />
|12.1<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/e/ed/IP161421.pdf]<br />
|-<br />
|12/15/2016<br />
|InP#1615<br />
|0.91<br />
|9.3<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/6/64/IP161510.pdf]<br />
|-<br />
|1/23/2017<br />
|InP#1701<br />
|0.93<br />
|9.4<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/7/7f/IP170106.pdf]<br />
|-<br />
|2/7/2017<br />
|InP#1702<br />
|0.75<br />
|7.7<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/2/2f/IP170208.pdf]<br />
|-<br />
|2/21/2017<br />
|InP#1703<br />
|0.91<br />
|11.3<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/b/b8/IP170302.pdf]<br />
|-<br />
|3/21/2017<br />
|InP#1704<br />
|1.01<br />
|11.3<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/fd/IP170404.pdf]<br />
|-<br />
|4/20/2017<br />
|inP#1705<br />
|0.88<br />
|10.2<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/5/5b/IP170505.pdf]<br />
|-<br />
|5/4/2017<br />
|InP#1706<br />
|0.84<br />
|11<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/d/d1/IP170603.pdf]<br />
|-<br />
|5/19/2017<br />
|InP#1707<br />
|0.82<br />
|9.9<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/7/7f/IP170706.pdf]<br />
|-<br />
|7/6/2017<br />
|InP#1708<br />
|0.98<br />
|12.1<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/a/ac/IP172520.pdf]<br />
|-<br />
|8/16/2017<br />
|InP#1709<br />
|0.76<br />
|8<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/fa/IP172805.pdf]<br />
|-<br />
|8/28/2017<br />
|InP#1710<br />
|1<br />
|11.7<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/a/aa/IP172905.pdf]<br />
|-<br />
|10/11/2017<br />
|InP#1711<br />
|1<br />
|11<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/9/97/IP173009.pdf]<br />
|-<br />
|10/23/2017<br />
|InP#1712<br />
|1.11<br />
|13.1<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/4/41/IP173107.pdf]<br />
|-<br />
|11/21/2017<br />
|InP#1713<br />
|1.04<br />
|12.1<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/02/IP173203.pdf]<br />
|-<br />
|12/7/2017<br />
|InP#1714<br />
|0.96<br />
|10.4<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/03/IP173306.pdf]<br />
|-<br />
|1/2/2018<br />
|InP#1801<br />
|1.44<br />
|14.3<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/0d/IP180104.pdf]<br />
|-<br />
|3/1/2018<br />
|InP#1802<br />
|0.96<br />
|9<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/6/65/IP180207.pdf]<br />
|-<br />
|4/5/2018<br />
|InP#1803<br />
|1.05<br />
|11.9<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/c/c7/IP180304.pdf]<br />
|-<br />
|4/10/2018<br />
|InP#1804<br />
|1.12<br />
|12.8<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/1/17/IP180406.pdf]<br />
|-<br />
|4/26/2018<br />
|InP#1805<br />
|1.29<br />
|13.6<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/c/c8/IP180508.pdf]<br />
|-<br />
|5/22/2018<br />
|InP#1806<br />
|0.88<br />
|8.4<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/e/e1/IP180606.pdf]<br />
|-<br />
|8/7/2018<br />
|InP#1807<br />
|0.81<br />
|8.0<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/fb/IP180705.pdf]<br />
|-<br />
|10/3/2018<br />
|InP#1808<br />
|1.01<br />
|13.7<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/e/e5/IP180805.pdf]<br />
|-<br />
|12/10/2018<br />
|InP#1809<br />
|1.01<br />
|11.4<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/8/84/IP180909.pdf]<br />
|-<br />
|1/31/2019<br />
|InP#1901<br />
|0.88<br />
|9.7<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/b/b7/IP190101.pdf][https://wiki.nanotech.ucsb.edu/wiki/images/0/06/IP190103.pdf]<br />
|-<br />
|8/30/2020<br />
|InP#2001<br />
|1.11<br />
|10.4<br />
|[https://wiki.nanotech.ucsb.edu/w/images/8/8d/IP020104.pdf]<br />
|-<br />
|2/3/2021<br />
|InP#2101<br />
|1.30<br />
|16<br />
|[https://wiki.nanotech.ucsb.edu/w/images/4/47/IP210117.pdf][https://wiki.nanotech.ucsb.edu/w/images/d/d4/IP210119.pdf]<br />
|}</div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=File:IP210119.pdf&diff=158754
File:IP210119.pdf
2021-02-04T01:32:48Z
<p>Ningcao: </p>
<hr />
<div></div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=InP_Etch_Rate_and_Selectivity_(InP/SiO2)&diff=158753
InP Etch Rate and Selectivity (InP/SiO2)
2021-02-04T01:32:29Z
<p>Ningcao: add a pic</p>
<hr />
<div>{| class="wikitable"<br />
| colspan="4" |1.4 mT, 125/800W, Cl2/H2/Ar flow-rate=6.3/12.7/2 sccm, chuck temperature=200 C, and etch time=90s (Prior to the etch, do O2 plasma chamber clean for 15 minutes, then, chamber coating with the same recipe and a quarter dummy InP on carrier for 15 minutes.<br />
|<br />
|-<br />
|Date <br />
|Sample#<br />
|InP Etch Rate (um/min)<br />
|Selectivity (InP/SiO2)<br />
|Profile SEM Picture<br />
|-<br />
|10/4/2016<br />
|InP#1613<br />
|0.92<br />
|8.9<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/9/9b/IP161332.pdf]<br />
|-<br />
|12/1/2016<br />
|InP#1614<br />
|0.96<br />
|12.1<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/e/ed/IP161421.pdf]<br />
|-<br />
|12/15/2016<br />
|InP#1615<br />
|0.91<br />
|9.3<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/6/64/IP161510.pdf]<br />
|-<br />
|1/23/2017<br />
|InP#1701<br />
|0.93<br />
|9.4<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/7/7f/IP170106.pdf]<br />
|-<br />
|2/7/2017<br />
|InP#1702<br />
|0.75<br />
|7.7<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/2/2f/IP170208.pdf]<br />
|-<br />
|2/21/2017<br />
|InP#1703<br />
|0.91<br />
|11.3<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/b/b8/IP170302.pdf]<br />
|-<br />
|3/21/2017<br />
|InP#1704<br />
|1.01<br />
|11.3<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/fd/IP170404.pdf]<br />
|-<br />
|4/20/2017<br />
|inP#1705<br />
|0.88<br />
|10.2<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/5/5b/IP170505.pdf]<br />
|-<br />
|5/4/2017<br />
|InP#1706<br />
|0.84<br />
|11<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/d/d1/IP170603.pdf]<br />
|-<br />
|5/19/2017<br />
|InP#1707<br />
|0.82<br />
|9.9<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/7/7f/IP170706.pdf]<br />
|-<br />
|7/6/2017<br />
|InP#1708<br />
|0.98<br />
|12.1<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/a/ac/IP172520.pdf]<br />
|-<br />
|8/16/2017<br />
|InP#1709<br />
|0.76<br />
|8<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/fa/IP172805.pdf]<br />
|-<br />
|8/28/2017<br />
|InP#1710<br />
|1<br />
|11.7<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/a/aa/IP172905.pdf]<br />
|-<br />
|10/11/2017<br />
|InP#1711<br />
|1<br />
|11<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/9/97/IP173009.pdf]<br />
|-<br />
|10/23/2017<br />
|InP#1712<br />
|1.11<br />
|13.1<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/4/41/IP173107.pdf]<br />
|-<br />
|11/21/2017<br />
|InP#1713<br />
|1.04<br />
|12.1<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/02/IP173203.pdf]<br />
|-<br />
|12/7/2017<br />
|InP#1714<br />
|0.96<br />
|10.4<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/03/IP173306.pdf]<br />
|-<br />
|1/2/2018<br />
|InP#1801<br />
|1.44<br />
|14.3<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/0d/IP180104.pdf]<br />
|-<br />
|3/1/2018<br />
|InP#1802<br />
|0.96<br />
|9<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/6/65/IP180207.pdf]<br />
|-<br />
|4/5/2018<br />
|InP#1803<br />
|1.05<br />
|11.9<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/c/c7/IP180304.pdf]<br />
|-<br />
|4/10/2018<br />
|InP#1804<br />
|1.12<br />
|12.8<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/1/17/IP180406.pdf]<br />
|-<br />
|4/26/2018<br />
|InP#1805<br />
|1.29<br />
|13.6<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/c/c8/IP180508.pdf]<br />
|-<br />
|5/22/2018<br />
|InP#1806<br />
|0.88<br />
|8.4<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/e/e1/IP180606.pdf]<br />
|-<br />
|8/7/2018<br />
|InP#1807<br />
|0.81<br />
|8.0<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/fb/IP180705.pdf]<br />
|-<br />
|10/3/2018<br />
|InP#1808<br />
|1.01<br />
|13.7<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/e/e5/IP180805.pdf]<br />
|-<br />
|12/10/2018<br />
|InP#1809<br />
|1.01<br />
|11.4<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/8/84/IP180909.pdf]<br />
|-<br />
|1/31/2019<br />
|InP#1901<br />
|0.88<br />
|9.7<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/b/b7/IP190101.pdf][https://wiki.nanotech.ucsb.edu/wiki/images/0/06/IP190103.pdf]<br />
|-<br />
|8/30/2020<br />
|InP#2001<br />
|1.11<br />
|10.4<br />
|[https://wiki.nanotech.ucsb.edu/w/images/8/8d/IP020104.pdf]<br />
|-<br />
|2/3/2021<br />
|InP#2101<br />
|1.30<br />
|16<br />
|[https://wiki.nanotech.ucsb.edu/w/images/4/47/IP210117.pdf]<br />
|}</div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=File:IP210117.pdf&diff=158752
File:IP210117.pdf
2021-02-04T01:31:08Z
<p>Ningcao: </p>
<hr />
<div></div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=InP_Etch_Rate_and_Selectivity_(InP/SiO2)&diff=158751
InP Etch Rate and Selectivity (InP/SiO2)
2021-02-04T01:28:34Z
<p>Ningcao: add a data point</p>
<hr />
<div>{| class="wikitable"<br />
| colspan="4" |1.4 mT, 125/800W, Cl2/H2/Ar flow-rate=6.3/12.7/2 sccm, chuck temperature=200 C, and etch time=90s (Prior to the etch, do O2 plasma chamber clean for 15 minutes, then, chamber coating with the same recipe and a quarter dummy InP on carrier for 15 minutes.<br />
|<br />
|-<br />
|Date <br />
|Sample#<br />
|InP Etch Rate (um/min)<br />
|Selectivity (InP/SiO2)<br />
|Profile SEM Picture<br />
|-<br />
|10/4/2016<br />
|InP#1613<br />
|0.92<br />
|8.9<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/9/9b/IP161332.pdf]<br />
|-<br />
|12/1/2016<br />
|InP#1614<br />
|0.96<br />
|12.1<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/e/ed/IP161421.pdf]<br />
|-<br />
|12/15/2016<br />
|InP#1615<br />
|0.91<br />
|9.3<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/6/64/IP161510.pdf]<br />
|-<br />
|1/23/2017<br />
|InP#1701<br />
|0.93<br />
|9.4<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/7/7f/IP170106.pdf]<br />
|-<br />
|2/7/2017<br />
|InP#1702<br />
|0.75<br />
|7.7<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/2/2f/IP170208.pdf]<br />
|-<br />
|2/21/2017<br />
|InP#1703<br />
|0.91<br />
|11.3<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/b/b8/IP170302.pdf]<br />
|-<br />
|3/21/2017<br />
|InP#1704<br />
|1.01<br />
|11.3<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/fd/IP170404.pdf]<br />
|-<br />
|4/20/2017<br />
|inP#1705<br />
|0.88<br />
|10.2<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/5/5b/IP170505.pdf]<br />
|-<br />
|5/4/2017<br />
|InP#1706<br />
|0.84<br />
|11<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/d/d1/IP170603.pdf]<br />
|-<br />
|5/19/2017<br />
|InP#1707<br />
|0.82<br />
|9.9<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/7/7f/IP170706.pdf]<br />
|-<br />
|7/6/2017<br />
|InP#1708<br />
|0.98<br />
|12.1<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/a/ac/IP172520.pdf]<br />
|-<br />
|8/16/2017<br />
|InP#1709<br />
|0.76<br />
|8<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/fa/IP172805.pdf]<br />
|-<br />
|8/28/2017<br />
|InP#1710<br />
|1<br />
|11.7<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/a/aa/IP172905.pdf]<br />
|-<br />
|10/11/2017<br />
|InP#1711<br />
|1<br />
|11<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/9/97/IP173009.pdf]<br />
|-<br />
|10/23/2017<br />
|InP#1712<br />
|1.11<br />
|13.1<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/4/41/IP173107.pdf]<br />
|-<br />
|11/21/2017<br />
|InP#1713<br />
|1.04<br />
|12.1<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/02/IP173203.pdf]<br />
|-<br />
|12/7/2017<br />
|InP#1714<br />
|0.96<br />
|10.4<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/03/IP173306.pdf]<br />
|-<br />
|1/2/2018<br />
|InP#1801<br />
|1.44<br />
|14.3<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/0d/IP180104.pdf]<br />
|-<br />
|3/1/2018<br />
|InP#1802<br />
|0.96<br />
|9<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/6/65/IP180207.pdf]<br />
|-<br />
|4/5/2018<br />
|InP#1803<br />
|1.05<br />
|11.9<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/c/c7/IP180304.pdf]<br />
|-<br />
|4/10/2018<br />
|InP#1804<br />
|1.12<br />
|12.8<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/1/17/IP180406.pdf]<br />
|-<br />
|4/26/2018<br />
|InP#1805<br />
|1.29<br />
|13.6<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/c/c8/IP180508.pdf]<br />
|-<br />
|5/22/2018<br />
|InP#1806<br />
|0.88<br />
|8.4<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/e/e1/IP180606.pdf]<br />
|-<br />
|8/7/2018<br />
|InP#1807<br />
|0.81<br />
|8.0<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/fb/IP180705.pdf]<br />
|-<br />
|10/3/2018<br />
|InP#1808<br />
|1.01<br />
|13.7<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/e/e5/IP180805.pdf]<br />
|-<br />
|12/10/2018<br />
|InP#1809<br />
|1.01<br />
|11.4<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/8/84/IP180909.pdf]<br />
|-<br />
|1/31/2019<br />
|InP#1901<br />
|0.88<br />
|9.7<br />
|[https://wiki.nanotech.ucsb.edu/wiki/images/b/b7/IP190101.pdf][https://wiki.nanotech.ucsb.edu/wiki/images/0/06/IP190103.pdf]<br />
|-<br />
|8/30/2020<br />
|InP#2001<br />
|1.11<br />
|10.4<br />
|[https://wiki.nanotech.ucsb.edu/w/images/8/8d/IP020104.pdf]<br />
|-<br />
|2/3/2021<br />
|InP#2101<br />
|1.30<br />
|16<br />
|<br />
|}</div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=ICP_Etching_Recipes&diff=158748
ICP Etching Recipes
2021-02-03T01:43:33Z
<p>Ningcao: /* Historical Data (SiO2, Florine ICP Etcher) */</p>
<hr />
<div>{{recipes|Dry Etching}}<br />
<br />
=[[DSEIII_(PlasmaTherm/Deep_Silicon_Etcher)]]=<br />
<br />
== Edge-Bead Removal ==<br />
Make sure to remove photoresist from edges of wafer, or PR may stick to the top-side wafer clamp and destroy your wafer during unload!<br />
* [[ASML DUV: Edge Bead Removal via Photolithography|Edge Bead Removal via Photolithography]]: use a custom metal mask to pattern the photoresist with a flood exposure.<br />
** If you are etching fully through a wafer, remember that removal of edge-bead will cause full etching in the exposed areas. To prevent a wafer from falling into the machine after the etch, you can [[Packaging Recipes#Wafer Bonder .28Logitech WBS7.29|mount to a carrier wafer using wax]].<br />
<br />
==High Rate Bosch Etch (DSEIII)==<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/4/4a/10-Si_Etch_Bosch_DSEIII.pdf Bosch Process Recipe and Characterization] - Standard recipe on the tool.<br />
**Recipe Name: "'''''Plasma-Therm Standard DSE'''''" (''Production'' - copy to your ''Personal'' category)<br />
**Standard [https://en.wikipedia.org/wiki/Deep_reactive-ion_etching#Bosch_process Bosch Process] for high aspect-ratio, high-selectivity Silicon etching. <br />
**Cycles between polymer deposition "Dep" / Polymer etch "Etch A" / Si etch "Etch B" steps. Step Times gives fine control.<br />
***To reduce roughening/grassing (black silicon), reduce Dep step time by ~20%.<br />
**Patterns with different etched areas will have different "optimal" parameters.<br />
**Approx Selectivity to Photoresist: 60-80 or better. Larger open area, lower selectivity and lower etch rate. <br />
<br />
==Single-Step Low Etch Rate Smooth Sidewall Process (DSEIII)==<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/8f/10-Si_Etch_Single_Step_Smooth_Sidewall_DSEIII.pdf Single Step Silicon Etch Recipe and Characterization]<br />
**Recipe Name: "'''''Nano Trench Etch'''''" (''Production'' - copy to your ''Personal'' category)<br />
**Used instead of Bosch Process, to avoid scalloping on the sidewall. <br />
**Lower selectivity, lower etch rate, smoother sidewalls.<br />
<br />
=[[Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)|PlasmaTherm/SLR Fluorine Etcher]]=<br />
==Si Etching==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/b/b8/SLR_-_SiVertHF.pdf SiVertHF] - Si Vertical Etch using C4F8/SF6/CF4 and resist mask<br />
**Etch Rates: Si ≈ 300-350 nm/min; SiO2 ≈ 30-35 nm/min<br />
**89-90 degree etch angle, ie, vertical.<br />
<br />
==SiO2 Etching==<br />
<br />
*[//wiki.nanotech.ucsb.edu/w/images/f/f6/SiO2_Etch%2C_Ru_HardMask_-_Fluorine_ICP_Etch_Process_-_Ning_Cao_2019-06.pdf SiO2 Etching using Ruthenium Hardmask] - Full Process Traveler<br />
**''Ning Cao & Bill Mitchell, 2019-06''<br />
**''High-selectivity and deep etching using sputtered Ru hardmask and I-Line litho.''<br />
**''Variations in SiO<sub>2</sub> etch Bias Power: 50/200/400W bias.''<br />
**Ru etch selectivity to PR: 0.18 (less than 1): 150nm Ru / 800nm PR<br />
**SiO<sub>2</sub> selectivity to Ru: 40 for Bias=200W<br />
**SiO<sub>2</sub> etch rate: 450nn/min for Bias=200W<br />
<br />
==Historical Data (SiO2, Florine ICP Etcher)==<br />
<br />
*[[Test Data of Etching SiO2 with CHF3/CF4-Florine ICP Etcher|Test Data of Etching SiO<sub>2</sub> with CHF3/CF4-Florine ICP Etcher]]<br />
<br />
=[[ICP Etch 1 (Panasonic E626I)]]=<br />
==SiO<sub>2</sub> Etching (Panasonic 1)==<br />
<br />
=== Recipes ===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/3/3e/Panasonic1-SiO-Etch.pdf SiO<sub>2</sub> Vertical Etch Recipe Parameters - CHF<sub>3</sub> "SiOVert"]<br />
**Etch rate ≈ 2300Å/min (users must calibrate)<br />
**Selectivity (SiO2:Photoresist) ≈ greater than 1:1 (users must calibrate)<br />
<br />
===Historical Data (SiO2, Panasonic 1)===<br />
<br />
*[[Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Florine etch of the underneath layer)|Test Data of etching SiO2 with CHF3/CF4/O2]]<br />
*[[Test Data of etching SiO2 with CHF3/CF4-ICP1|Test Data of etching SiO2 with CHF3/CF4]]<br />
<br />
=== Recipe Variations ===<br />
''Use these to determine how each etch parameter affects the process.''<br />
<br />
* [//wiki.nanotech.ucsb.edu/wiki/images/5/5e/Panasonic1-SiO2-Data-Process-Variation-CHF3-revA.pdf SiO<sub>2</sub> CHF<sub>3</sub> Etch Variations] - CHF3 with varying Bias and Pressure, Slanted SiO2 etching<br />
<br />
==SiN<sub>x</sub> Etching (Panasonic 1)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/c/ce/Panasonic1-SiN-Etch-Plasma-CF4-O2-ICP-revA.pdf SiN<sub>x</sub> Etch Rates and Variations - CF<sub>4</sub>-O<sub>2</sub>]<br />
<br />
==Al Etch (Panasonic 1)==<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/3/3b/Panasonic-1-Al-Etch-RevA.pdf Al Etch Recipes - Cl<sub>2</sub>BCl<sub>3</sub>]<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/6/60/32-Reducing_AlCl3_Corrosion_with_CHF3_plasma.pdf AlCl<sub>3</sub> Erosion Issue and the Solution]<br />
<br />
==Cr Etch (Panasonic 1)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/88/Panasonic-1-Cr-Etch-revA.pdf Cr Etch Recipes - Cl<sub>2</sub>O<sub>2</sub>]<br />
<br />
==Ta Etch (Panasonic 1)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/f/f2/104_Ta_Etch.pdf Ta Etch Recipe] - Cl2/BCl3<br />
<br />
==Ti Etch (Panasonic 1)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/4/47/Panasonic-1-Ti-Etch-Deep-RevA.pdf Ti Deep Etch Recipes - Cl<sub>2</sub>Ar]<br />
**See [[doi:10.1149/1.2006647|E. Parker, ''et. al.'' Jnl. Electrochem. Soc., 152 (10) C675-C683 2005]].<br />
<br />
==W-TiW Etch (Panasonic 1)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/7/76/Panasonic1-TiW-W-Etch-Plasma-RIE-RevA.pdf Ti-TiW Etch Recipes - SF<sub>6</sub>Ar]<br />
<br />
==GaAs-AlGaAs Etch (Panasonic 1)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/b/bb/Panasonic1-GaAs-PhotonicCrystal-RIE-Plasma-Nanoscale-Etch-RevA.pdf GaAs-Nanoscale Etch Recipe - PR mask - Cl<sub>2</sub>-BCl<sub>3</sub>-Ar]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/2/26/12-Plasma_Etching_of_AlGaAs-Panasonic_ICP-1-Etcher.pdf AlGaAs Etch Recipes - Cl<sub>2</sub>N<sub>2</sub>]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/0/04/Panasonic1-GaAs-Via-Etch-Plasma-RIE-Fast-DRIE-RevA.pdf GaAs DRIE via Etch Recipes - Cl<sub>2</sub>-BCl<sub>3</sub>-Ar PR passivation]<br />
<br />
==GaN Etch (Panasonic 1)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/d/d6/07-GaN_Etch-Panasonic-ICP-1.pdf GaN Etch Recipes Cl<sub>2</sub>N<sub>2</sub>]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/6/60/Panasonic1-GaN-AlGaN-Selective-Etch-Plasma-RIE-ICP-RevA.pdf GaN Selective Etch over AlGaN Recipes BCl<sub>3</sub>-SF<sub>6</sub>]<br />
<br />
==Photoresist and ARC Etching==<br />
[https://wiki.nanotech.ucsb.edu/wiki/index.php/ICP_Etching_Recipes#Photoresist_and_ARC_etching_2 Please see the recipes for Panasonic ICP#2] - the same recipes apply. <br />
<br />
Etching of DUV42P at standard spin/bake parameters also completes in 45 seconds.<br />
<br />
==SiC Etch (Panasonic 1)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/d/d0/Panasonic_1-SiC-ICP-RIE-Etch-Plasma-SF6-RevA.pdf SiC Etch Recipes Ni Mask - SF<sub>6</sub>]<br />
<br />
==Sapphire Etch (Panasonic 1)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/3/3a/Panasonic1-sapphire-etch-RIE-Plasma-BCl3-ICP-RevA.pdf Sapphire Etch Recipes Ni and PR Mask - BCl<sub>3</sub>-Cl<sub>2</sub>]<br />
<br />
==Old Deleted Recipes==<br />
Since there are a limited number of recipe slots on the tool, we occasionally have to delete old, unused recipes.<br />
<br />
If you need to free up a recipe slot, please contact [[Don Freeborn|Don]] and he'll help you find an old recipe to replace. We take photographs of old recipes, and save them in case a group needs to revive the recipe. Contact us if your old recipe went missing.<br />
<br />
=[[ICP Etch 2 (Panasonic E640)]]=<br />
Recipes starting points for materials without processes listed can be obtained from Panasonic1 recipe files. The chambers are slightly different, but essentially the same, requiring only small program changes to obtain similar results.<br />
<br />
==SiO<sub>2</sub> Etching (Panasonic 2)==<br />
<br />
===Recipes===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/d/d5/Panasonic2-SiOx-Recipe.pdf SiO<sub>2</sub> Vertical Etch Recipe - CHF<sub>3</sub> "SiOVert"]<br />
**Direct copy of "SiOVert" from ICP#1, [[ICP_Etching_Recipes#SiO2_Etching_.28Panasonic_1.29|see parameters there]].<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/9/9e/33-Etching_SiO2_with_Vertical_Side-wall.pdf SiO<sub>2</sub> Vertical Etch Recipe#2 - CF<sub>4</sub>/CHF<sub>3</sub>]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/1/1e/Panasonic2-ICP-Plasma-Etch-SiO2-nanoscale-rev1.pdf SiO<sub>2</sub> Nanoscale Etch Recipe - CHF<sub>3</sub>/O<sub>2</sub>]<br />
<br />
===Historical Data (SiO2 Etch, Panasonic 2)===<br />
<br />
*[[Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Fluorine etch of the underneath layer)|Test Data of etching SiO2 with CHF3/CF4/O2]]<br />
*[[Test Data of etching SiO2 with CHF3/CF4]]<br />
<br />
===Recipe Variations===<br />
''Use these to determine how each etch parameter affects the process.''<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/1/1e/05-SiO2_Nano-structure_Etch.pdf Angled SiO2 sidewall recipe]<br />
<br />
==SiN<sub>x</sub> Etching (Panasonic 2)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/0/06/Panasonic2-ICP-Plasma-Etch-SiN-nanoscale-rev1.pdf SiN<sub>x</sub> Nanoscale Etch Recipe - CHF<sub>3</sub>/O<sub>2</sub>]<br />
<br />
==Al Etch (Panasonic 2)==<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/3/3b/Panasonic-1-Al-Etch-RevA.pdf Al Etch Recipes - use panasonic 1 parameters, etch rate 50% higher]<br />
<br />
==Al2O3 Etching (Panasonic 2)==<br />
[//wiki.nanotech.ucsb.edu/wiki/images/d/d2/Brian_Markman_-_Al2O3_ICP2_Etch_Rates_2018.pdf ALD Al2O3 Etch Rates in BCl3 Chemistry] (click for plots of etch rate)<br />
<br />
''Contributed by Brian Markman, 2018''<br />
<br />
*BCl3 = 30sccm<br />
*Pressure = 0.50 Pa<br />
*ICP Source RF = 500<br />
*Bias RF = 50W or 250W (250W can burn PR)<br />
*Cooling He Flow/Pressure = 15.0 sccm / 400 Pa<br />
*Etch Rate 50W: 0.66nm/sec<br />
*Etch Rate 250W: 1.0 nm/sec<br />
<br />
==GaAs Etch (Panasonic 2)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/f/ff/16-GaAs_etch-ICP-2.pdf GaAs Etch Recipes - Panasonic 2 - Cl<sub>2</sub>N<sub>2</sub>]<br />
<br />
==Photoresist and ARC etching==<br />
Basic recipes for etching photoresist and Bottom Anti-Reflection Coating (BARC) underlayers are as follows:<br />
<br />
===ARC Etching: DUV-42P or AR6===<br />
<br />
*O2 = 40 sccm // 0.5 Pa<br />
*ICP = 75W // RF = 75W<br />
*45 sec for full etching of DUV-42P (same as for AR6; 2018-2019, [[Demis D. John|Demis]]/[[Brian Thibeault|BrianT]])<br />
<br />
===UV6-0.8 Etching===<br />
Works very well for photoresist stripping<br />
<br />
*O2 = 40 sccm // 1.0 Pa<br />
*ICP = 350W // RF = 100W<br />
*Etch Rate = 518.5nm / 1min (2019, [[Demis D. John|Demis]])<br />
*2m30sec to fully remove with ~200% overetch<br />
<br />
==Ru (Ruthenium) Etch (Panasonic 2)==<br />
TALK TO BILL BEFORE PUBLISHING WORK USING THIS ETCH. We are currently writing a paper on this etch.<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/e/e9/194_Ru_Etch_O2%2CCl2.pdf Ru Etch] - ''[[Bill Mitchell]] 2019-09-19''<br />
**''BillM is currently writing a publication on this etch - please discuss with [[Bill Mitchell|Bill]] before submitting any publications using this etch.''<br />
<br />
=[[ICP-Etch (Unaxis VLR)]]=<br />
==GaAs-AlGaAs Etch (Unaxis VLR)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/4/4e/15-GaAs_etch-Unaxis_ICP_etcher.pdf GaAs Etch Recipe (Cl<sub>2</sub>N<sub>2</sub> 30C)]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/1/1f/14-AlAs-GR-cal_etch-Unaxis_ICP_etcher.pdf AlGaAs Etch Recipe (Cl<sub>2</sub>N<sub>2</sub> 30C)]<br />
<br />
==InP-InGaAs-InAlAs Etch (Unaxis VLR)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/9/90/18-InP-based_etching-Cl2N2Ar.pdf InP-based Material Etch Profile (Cl<sub>2</sub>N<sub>2</sub>Ar200C)]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/a/ad/17-InP%26InGaAs_etch-Cl2H2Ar-Unaxis-VLR.pdf InP-InGaAs Etch Profile (Cl<sub>2</sub>H<sub>2</sub>Ar 200C)]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/6/6e/SiO2-Mask_Etch_Recipe_for_Unaxis_Cl2_Etch.pdf Recipe of Etching SiO<sub>2</sub> Mask for Cl<sub>2</sub> Etch (ICP#2)]<br />
*[[InP Etch Test Result in Details|InP Etch Historical Data (Cl<sub>2</sub>H<sub>2</sub>Ar 200C)]]<br />
*[[InP Etch Rate and Selectivity (InP/SiO2)|InP Etch Test]]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/a/ac/Lower-Etch-Rate_InP_Etch_using_Unaxis_PM1_tool_at_200_C.pdf Lower etch-rate InP Etch (Cl<sub>2</sub>N<sub>2</sub> 200C)]<br />
<br />
==GaN Etch (Unaxis VLR)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/d/df/09-Plasma_Etching_of_GaN-UnaxisPM1.pdf GaN Etch Recipe (Cl<sub>2</sub>BCl<sub>3</sub>N<sub>2</sub>Ar 85C)]<br />
<br />
==GaSb Etch (Unaxis VLR)==<br />
<br />
<br />
=[[Si Deep RIE (PlasmaTherm/Bosch Etch)]]=<br />
'''This tool does not exist in this configuration any more, so these recipes are for Reference purposes Only!!!'''<br />
The machine was upgraded to be the new Plasma-Therm Fluorine ICP Etcher - the chamber configuration is now different, making these recipes invalid.<br />
For Deep Silicon Etching, the Plasma-Therm DSE-iii is often used. Some single-step Silicon etching is still performed on the SLR Fluorine ICP, due to the slower etch rate.<br />
<br />
==Bosch and Release Etch (Si Deep RIE)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/0/02/10-Si_Etch_Bosch_Release_DRIE.pdf Bosch and Release Processes]<br />
**Ideal for deep (>>1µm), vertical etching of Silicon. Through-wafer etches are possible (requires carrier wafer).<br />
**Etch rate depends on area of exposed silicon being etched.<br />
**Al<sub>2</sub>O<sub>3</sub> mask (ALD or Sputter) has >9000:1 selectivity<br />
**SiO<sub>2</sub> (PECVD) mask has ~100:1 selectivity<br />
**Thermal SiO<sub>2</sub> has ~300:1 selectivity.<br />
<br />
==Single-step Si Etching (not Bosch Process!) (Si Deep RIE)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/d/d2/10-Si_Etch_using_DRIE_%28single-step%29.pdf Single-step Si Vertical Etch Recipe - SF<sub>6</sub>-C<sub>4</sub>F<sub>8</sub>-Ar]</div>
Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=ICP_Etching_Recipes&diff=158747
ICP Etching Recipes
2021-02-03T01:39:44Z
<p>Ningcao: /* Historical Data (SiO2, Florine ICP Etcher) */</p>
<hr />
<div>{{recipes|Dry Etching}}<br />
<br />
=[[DSEIII_(PlasmaTherm/Deep_Silicon_Etcher)]]=<br />
<br />
== Edge-Bead Removal ==<br />
Make sure to remove photoresist from edges of wafer, or PR may stick to the top-side wafer clamp and destroy your wafer during unload!<br />
* [[ASML DUV: Edge Bead Removal via Photolithography|Edge Bead Removal via Photolithography]]: use a custom metal mask to pattern the photoresist with a flood exposure.<br />
** If you are etching fully through a wafer, remember that removal of edge-bead will cause full etching in the exposed areas. To prevent a wafer from falling into the machine after the etch, you can [[Packaging Recipes#Wafer Bonder .28Logitech WBS7.29|mount to a carrier wafer using wax]].<br />
<br />
==High Rate Bosch Etch (DSEIII)==<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/4/4a/10-Si_Etch_Bosch_DSEIII.pdf Bosch Process Recipe and Characterization] - Standard recipe on the tool.<br />
**Recipe Name: "'''''Plasma-Therm Standard DSE'''''" (''Production'' - copy to your ''Personal'' category)<br />
**Standard [https://en.wikipedia.org/wiki/Deep_reactive-ion_etching#Bosch_process Bosch Process] for high aspect-ratio, high-selectivity Silicon etching. <br />
**Cycles between polymer deposition "Dep" / Polymer etch "Etch A" / Si etch "Etch B" steps. Step Times gives fine control.<br />
***To reduce roughening/grassing (black silicon), reduce Dep step time by ~20%.<br />
**Patterns with different etched areas will have different "optimal" parameters.<br />
**Approx Selectivity to Photoresist: 60-80 or better. Larger open area, lower selectivity and lower etch rate. <br />
<br />
==Single-Step Low Etch Rate Smooth Sidewall Process (DSEIII)==<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/8f/10-Si_Etch_Single_Step_Smooth_Sidewall_DSEIII.pdf Single Step Silicon Etch Recipe and Characterization]<br />
**Recipe Name: "'''''Nano Trench Etch'''''" (''Production'' - copy to your ''Personal'' category)<br />
**Used instead of Bosch Process, to avoid scalloping on the sidewall. <br />
**Lower selectivity, lower etch rate, smoother sidewalls.<br />
<br />
=[[Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)|PlasmaTherm/SLR Fluorine Etcher]]=<br />
==Si Etching==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/b/b8/SLR_-_SiVertHF.pdf SiVertHF] - Si Vertical Etch using C4F8/SF6/CF4 and resist mask<br />
**Etch Rates: Si ≈ 300-350 nm/min; SiO2 ≈ 30-35 nm/min<br />
**89-90 degree etch angle, ie, vertical.<br />
<br />
==SiO2 Etching==<br />
<br />
*[//wiki.nanotech.ucsb.edu/w/images/f/f6/SiO2_Etch%2C_Ru_HardMask_-_Fluorine_ICP_Etch_Process_-_Ning_Cao_2019-06.pdf SiO2 Etching using Ruthenium Hardmask] - Full Process Traveler<br />
**''Ning Cao & Bill Mitchell, 2019-06''<br />
**''High-selectivity and deep etching using sputtered Ru hardmask and I-Line litho.''<br />
**''Variations in SiO<sub>2</sub> etch Bias Power: 50/200/400W bias.''<br />
**Ru etch selectivity to PR: 0.18 (less than 1): 150nm Ru / 800nm PR<br />
**SiO<sub>2</sub> selectivity to Ru: 40 for Bias=200W<br />
**SiO<sub>2</sub> etch rate: 450nn/min for Bias=200W<br />
<br />
==Historical Data (SiO2, Florine ICP Etcher)==<br />
<br />
*[[Test Data of etching SiO2 with CHF3/CF4-Florine ICP Etcher|Test Data of Etching SiO<sub>2</sub> with CHF3/CF4-Florine ICP Etcher]]<br />
<br />
=[[ICP Etch 1 (Panasonic E626I)]]=<br />
==SiO<sub>2</sub> Etching (Panasonic 1)==<br />
<br />
=== Recipes ===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/3/3e/Panasonic1-SiO-Etch.pdf SiO<sub>2</sub> Vertical Etch Recipe Parameters - CHF<sub>3</sub> "SiOVert"]<br />
**Etch rate ≈ 2300Å/min (users must calibrate)<br />
**Selectivity (SiO2:Photoresist) ≈ greater than 1:1 (users must calibrate)<br />
<br />
===Historical Data (SiO2, Panasonic 1)===<br />
<br />
*[[Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Florine etch of the underneath layer)|Test Data of etching SiO2 with CHF3/CF4/O2]]<br />
*[[Test Data of etching SiO2 with CHF3/CF4-ICP1|Test Data of etching SiO2 with CHF3/CF4]]<br />
<br />
=== Recipe Variations ===<br />
''Use these to determine how each etch parameter affects the process.''<br />
<br />
* [//wiki.nanotech.ucsb.edu/wiki/images/5/5e/Panasonic1-SiO2-Data-Process-Variation-CHF3-revA.pdf SiO<sub>2</sub> CHF<sub>3</sub> Etch Variations] - CHF3 with varying Bias and Pressure, Slanted SiO2 etching<br />
<br />
==SiN<sub>x</sub> Etching (Panasonic 1)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/c/ce/Panasonic1-SiN-Etch-Plasma-CF4-O2-ICP-revA.pdf SiN<sub>x</sub> Etch Rates and Variations - CF<sub>4</sub>-O<sub>2</sub>]<br />
<br />
==Al Etch (Panasonic 1)==<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/3/3b/Panasonic-1-Al-Etch-RevA.pdf Al Etch Recipes - Cl<sub>2</sub>BCl<sub>3</sub>]<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/6/60/32-Reducing_AlCl3_Corrosion_with_CHF3_plasma.pdf AlCl<sub>3</sub> Erosion Issue and the Solution]<br />
<br />
==Cr Etch (Panasonic 1)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/88/Panasonic-1-Cr-Etch-revA.pdf Cr Etch Recipes - Cl<sub>2</sub>O<sub>2</sub>]<br />
<br />
==Ta Etch (Panasonic 1)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/f/f2/104_Ta_Etch.pdf Ta Etch Recipe] - Cl2/BCl3<br />
<br />
==Ti Etch (Panasonic 1)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/4/47/Panasonic-1-Ti-Etch-Deep-RevA.pdf Ti Deep Etch Recipes - Cl<sub>2</sub>Ar]<br />
**See [[doi:10.1149/1.2006647|E. Parker, ''et. al.'' Jnl. Electrochem. Soc., 152 (10) C675-C683 2005]].<br />
<br />
==W-TiW Etch (Panasonic 1)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/7/76/Panasonic1-TiW-W-Etch-Plasma-RIE-RevA.pdf Ti-TiW Etch Recipes - SF<sub>6</sub>Ar]<br />
<br />
==GaAs-AlGaAs Etch (Panasonic 1)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/b/bb/Panasonic1-GaAs-PhotonicCrystal-RIE-Plasma-Nanoscale-Etch-RevA.pdf GaAs-Nanoscale Etch Recipe - PR mask - Cl<sub>2</sub>-BCl<sub>3</sub>-Ar]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/2/26/12-Plasma_Etching_of_AlGaAs-Panasonic_ICP-1-Etcher.pdf AlGaAs Etch Recipes - Cl<sub>2</sub>N<sub>2</sub>]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/0/04/Panasonic1-GaAs-Via-Etch-Plasma-RIE-Fast-DRIE-RevA.pdf GaAs DRIE via Etch Recipes - Cl<sub>2</sub>-BCl<sub>3</sub>-Ar PR passivation]<br />
<br />
==GaN Etch (Panasonic 1)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/d/d6/07-GaN_Etch-Panasonic-ICP-1.pdf GaN Etch Recipes Cl<sub>2</sub>N<sub>2</sub>]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/6/60/Panasonic1-GaN-AlGaN-Selective-Etch-Plasma-RIE-ICP-RevA.pdf GaN Selective Etch over AlGaN Recipes BCl<sub>3</sub>-SF<sub>6</sub>]<br />
<br />
==Photoresist and ARC Etching==<br />
[https://wiki.nanotech.ucsb.edu/wiki/index.php/ICP_Etching_Recipes#Photoresist_and_ARC_etching_2 Please see the recipes for Panasonic ICP#2] - the same recipes apply. <br />
<br />
Etching of DUV42P at standard spin/bake parameters also completes in 45 seconds.<br />
<br />
==SiC Etch (Panasonic 1)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/d/d0/Panasonic_1-SiC-ICP-RIE-Etch-Plasma-SF6-RevA.pdf SiC Etch Recipes Ni Mask - SF<sub>6</sub>]<br />
<br />
==Sapphire Etch (Panasonic 1)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/3/3a/Panasonic1-sapphire-etch-RIE-Plasma-BCl3-ICP-RevA.pdf Sapphire Etch Recipes Ni and PR Mask - BCl<sub>3</sub>-Cl<sub>2</sub>]<br />
<br />
==Old Deleted Recipes==<br />
Since there are a limited number of recipe slots on the tool, we occasionally have to delete old, unused recipes.<br />
<br />
If you need to free up a recipe slot, please contact [[Don Freeborn|Don]] and he'll help you find an old recipe to replace. We take photographs of old recipes, and save them in case a group needs to revive the recipe. Contact us if your old recipe went missing.<br />
<br />
=[[ICP Etch 2 (Panasonic E640)]]=<br />
Recipes starting points for materials without processes listed can be obtained from Panasonic1 recipe files. The chambers are slightly different, but essentially the same, requiring only small program changes to obtain similar results.<br />
<br />
==SiO<sub>2</sub> Etching (Panasonic 2)==<br />
<br />
===Recipes===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/d/d5/Panasonic2-SiOx-Recipe.pdf SiO<sub>2</sub> Vertical Etch Recipe - CHF<sub>3</sub> "SiOVert"]<br />
**Direct copy of "SiOVert" from ICP#1, [[ICP_Etching_Recipes#SiO2_Etching_.28Panasonic_1.29|see parameters there]].<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/9/9e/33-Etching_SiO2_with_Vertical_Side-wall.pdf SiO<sub>2</sub> Vertical Etch Recipe#2 - CF<sub>4</sub>/CHF<sub>3</sub>]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/1/1e/Panasonic2-ICP-Plasma-Etch-SiO2-nanoscale-rev1.pdf SiO<sub>2</sub> Nanoscale Etch Recipe - CHF<sub>3</sub>/O<sub>2</sub>]<br />
<br />
===Historical Data (SiO2 Etch, Panasonic 2)===<br />
<br />
*[[Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Fluorine etch of the underneath layer)|Test Data of etching SiO2 with CHF3/CF4/O2]]<br />
*[[Test Data of etching SiO2 with CHF3/CF4]]<br />
<br />
===Recipe Variations===<br />
''Use these to determine how each etch parameter affects the process.''<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/1/1e/05-SiO2_Nano-structure_Etch.pdf Angled SiO2 sidewall recipe]<br />
<br />
==SiN<sub>x</sub> Etching (Panasonic 2)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/0/06/Panasonic2-ICP-Plasma-Etch-SiN-nanoscale-rev1.pdf SiN<sub>x</sub> Nanoscale Etch Recipe - CHF<sub>3</sub>/O<sub>2</sub>]<br />
<br />
==Al Etch (Panasonic 2)==<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/3/3b/Panasonic-1-Al-Etch-RevA.pdf Al Etch Recipes - use panasonic 1 parameters, etch rate 50% higher]<br />
<br />
==Al2O3 Etching (Panasonic 2)==<br />
[//wiki.nanotech.ucsb.edu/wiki/images/d/d2/Brian_Markman_-_Al2O3_ICP2_Etch_Rates_2018.pdf ALD Al2O3 Etch Rates in BCl3 Chemistry] (click for plots of etch rate)<br />
<br />
''Contributed by Brian Markman, 2018''<br />
<br />
*BCl3 = 30sccm<br />
*Pressure = 0.50 Pa<br />
*ICP Source RF = 500<br />
*Bias RF = 50W or 250W (250W can burn PR)<br />
*Cooling He Flow/Pressure = 15.0 sccm / 400 Pa<br />
*Etch Rate 50W: 0.66nm/sec<br />
*Etch Rate 250W: 1.0 nm/sec<br />
<br />
==GaAs Etch (Panasonic 2)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/f/ff/16-GaAs_etch-ICP-2.pdf GaAs Etch Recipes - Panasonic 2 - Cl<sub>2</sub>N<sub>2</sub>]<br />
<br />
==Photoresist and ARC etching==<br />
Basic recipes for etching photoresist and Bottom Anti-Reflection Coating (BARC) underlayers are as follows:<br />
<br />
===ARC Etching: DUV-42P or AR6===<br />
<br />
*O2 = 40 sccm // 0.5 Pa<br />
*ICP = 75W // RF = 75W<br />
*45 sec for full etching of DUV-42P (same as for AR6; 2018-2019, [[Demis D. John|Demis]]/[[Brian Thibeault|BrianT]])<br />
<br />
===UV6-0.8 Etching===<br />
Works very well for photoresist stripping<br />
<br />
*O2 = 40 sccm // 1.0 Pa<br />
*ICP = 350W // RF = 100W<br />
*Etch Rate = 518.5nm / 1min (2019, [[Demis D. John|Demis]])<br />
*2m30sec to fully remove with ~200% overetch<br />
<br />
==Ru (Ruthenium) Etch (Panasonic 2)==<br />
TALK TO BILL BEFORE PUBLISHING WORK USING THIS ETCH. We are currently writing a paper on this etch.<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/e/e9/194_Ru_Etch_O2%2CCl2.pdf Ru Etch] - ''[[Bill Mitchell]] 2019-09-19''<br />
**''BillM is currently writing a publication on this etch - please discuss with [[Bill Mitchell|Bill]] before submitting any publications using this etch.''<br />
<br />
=[[ICP-Etch (Unaxis VLR)]]=<br />
==GaAs-AlGaAs Etch (Unaxis VLR)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/4/4e/15-GaAs_etch-Unaxis_ICP_etcher.pdf GaAs Etch Recipe (Cl<sub>2</sub>N<sub>2</sub> 30C)]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/1/1f/14-AlAs-GR-cal_etch-Unaxis_ICP_etcher.pdf AlGaAs Etch Recipe (Cl<sub>2</sub>N<sub>2</sub> 30C)]<br />
<br />
==InP-InGaAs-InAlAs Etch (Unaxis VLR)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/9/90/18-InP-based_etching-Cl2N2Ar.pdf InP-based Material Etch Profile (Cl<sub>2</sub>N<sub>2</sub>Ar200C)]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/a/ad/17-InP%26InGaAs_etch-Cl2H2Ar-Unaxis-VLR.pdf InP-InGaAs Etch Profile (Cl<sub>2</sub>H<sub>2</sub>Ar 200C)]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/6/6e/SiO2-Mask_Etch_Recipe_for_Unaxis_Cl2_Etch.pdf Recipe of Etching SiO<sub>2</sub> Mask for Cl<sub>2</sub> Etch (ICP#2)]<br />
*[[InP Etch Test Result in Details|InP Etch Historical Data (Cl<sub>2</sub>H<sub>2</sub>Ar 200C)]]<br />
*[[InP Etch Rate and Selectivity (InP/SiO2)|InP Etch Test]]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/a/ac/Lower-Etch-Rate_InP_Etch_using_Unaxis_PM1_tool_at_200_C.pdf Lower etch-rate InP Etch (Cl<sub>2</sub>N<sub>2</sub> 200C)]<br />
<br />
==GaN Etch (Unaxis VLR)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/d/df/09-Plasma_Etching_of_GaN-UnaxisPM1.pdf GaN Etch Recipe (Cl<sub>2</sub>BCl<sub>3</sub>N<sub>2</sub>Ar 85C)]<br />
<br />
==GaSb Etch (Unaxis VLR)==<br />
<br />
<br />
=[[Si Deep RIE (PlasmaTherm/Bosch Etch)]]=<br />
'''This tool does not exist in this configuration any more, so these recipes are for Reference purposes Only!!!'''<br />
The machine was upgraded to be the new Plasma-Therm Fluorine ICP Etcher - the chamber configuration is now different, making these recipes invalid.<br />
For Deep Silicon Etching, the Plasma-Therm DSE-iii is often used. Some single-step Silicon etching is still performed on the SLR Fluorine ICP, due to the slower etch rate.<br />
<br />
==Bosch and Release Etch (Si Deep RIE)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/0/02/10-Si_Etch_Bosch_Release_DRIE.pdf Bosch and Release Processes]<br />
**Ideal for deep (>>1µm), vertical etching of Silicon. Through-wafer etches are possible (requires carrier wafer).<br />
**Etch rate depends on area of exposed silicon being etched.<br />
**Al<sub>2</sub>O<sub>3</sub> mask (ALD or Sputter) has >9000:1 selectivity<br />
**SiO<sub>2</sub> (PECVD) mask has ~100:1 selectivity<br />
**Thermal SiO<sub>2</sub> has ~300:1 selectivity.<br />
<br />
==Single-step Si Etching (not Bosch Process!) (Si Deep RIE)==<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/d/d2/10-Si_Etch_using_DRIE_%28single-step%29.pdf Single-step Si Vertical Etch Recipe - SF<sub>6</sub>-C<sub>4</sub>F<sub>8</sub>-Ar]</div>
Ningcao