https://wiki.nanofab.ucsb.edu/wiki/api.php?action=feedcontributions&user=Hopkins+a&feedformat=atomUCSB Nanofab Wiki - User contributions [en]2024-03-28T11:55:42ZUser contributionsMediaWiki 1.35.13https://wiki.nanofab.ucsb.edu/w/index.php?title=Field_Emission_SEM_2_(JEOL_IT800SHL)&diff=161513Field Emission SEM 2 (JEOL IT800SHL)2023-11-09T22:50:07Z<p>Hopkins a: /* EDS Elemental Analysis */</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=SEM1_JEOL_IT800HSL.jpg<br />
|type = Inspection, Test and Characterization<br />
|super= Aidan Hopkins<br />
|super2= Bill Mitchell<br />
|location=Bay 1<br />
|description = JEOL 7600F FESEM<br />
|manufacturer = [http://www.jeolusa.com/PRODUCTS/ElectronOptics/ScanningElectronMicroscopesSEM/FESEM/JSM7600F/tabid/544/Default.aspx JEOL USA Inc]<br />
|materials = <br />
|toolid=5<br />
}} <br />
==About==<br />
The JEOL IT800HSL Field Emission Scanning Electron Microscope is used for imaging a variety of samples made in the facility. <br />
<br />
Identical to [https://wiki.nanofab.ucsb.edu/wiki/SEM_1_(JEOL_IT800SHL) SEM#1], but with EDAX module added.<br />
<br />
Please see the [https://wiki.nanofab.ucsb.edu/wiki/SEM_1_(JEOL_IT800SHL) SEM#1 page] for main tool details.<br />
<br />
==EDS Elemental Analysis==<br />
<br />
*[https://wiki.nanofab.ucsb.edu/w/images/3/3a/EDS_SOP.jpg EDS Operating Procedure]</div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:EDS_SOP.jpg&diff=161512File:EDS SOP.jpg2023-11-09T22:46:32Z<p>Hopkins a: </p>
<hr />
<div></div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Field_Emission_SEM_2_(JEOL_IT800SHL)&diff=161374Field Emission SEM 2 (JEOL IT800SHL)2023-09-27T18:03:44Z<p>Hopkins a: /* EDAX Elemental Analysis */</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=SEM1_JEOL_IT800HSL.jpg<br />
|type = Inspection, Test and Characterization<br />
|super= Aidan Hopkins<br />
|super2= Bill Mitchell<br />
|location=Bay 1<br />
|description = JEOL 7600F FESEM<br />
|manufacturer = [http://www.jeolusa.com/PRODUCTS/ElectronOptics/ScanningElectronMicroscopesSEM/FESEM/JSM7600F/tabid/544/Default.aspx JEOL USA Inc]<br />
|materials = <br />
|toolid=5<br />
}} <br />
==About==<br />
The JEOL IT800HSL Field Emission Scanning Electron Microscope is used for imaging a variety of samples made in the facility. <br />
<br />
Identical to [https://wiki.nanofab.ucsb.edu/wiki/SEM_1_(JEOL_IT800SHL) SEM#1], but with EDAX module added.<br />
<br />
Please see the [https://wiki.nanofab.ucsb.edu/wiki/SEM_1_(JEOL_IT800SHL) SEM#1 page] for main tool details.<br />
<br />
== EDS Elemental Analysis ==<br />
*EDS Operating Procedure</div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:EDS_SOP.pdf&diff=161373File:EDS SOP.pdf2023-09-27T18:02:49Z<p>Hopkins a: </p>
<hr />
<div></div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=SEM_1_(JEOL_IT800SHL)&diff=161362SEM 1 (JEOL IT800SHL)2023-09-26T15:24:43Z<p>Hopkins a: /* Mechanical */</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=SEM1_JEOL_IT800HSL.jpg<br />
|type = Inspection, Test and Characterization<br />
|super= Aidan Hopkins<br />
|super2= Bill Mitchell<br />
|location=Bay 1<br />
|description = JEOL 7600F FESEM<br />
|manufacturer = [http://www.jeolusa.com/PRODUCTS/ElectronOptics/ScanningElectronMicroscopesSEM/FESEM/JSM7600F/tabid/544/Default.aspx JEOL USA Inc]<br />
|materials = <br />
|toolid=<br />
}} <br />
==About==<br />
The JEOL IT800HSL Field Emission Scanning Electron Microscope is used for imaging a variety of samples made in the facility. <br />
<br />
===Capabilities===<br />
The system has multiple detectors, detailed below.<br />
Low-vacuum mode reduces sample charging by introducing N2 gas into the chamber, without sacrificing imaging quality (using a special vacuum nozzle on the electron column). Our system is equipped with a gentle-beam mode of operation where bias is put on the stage, allowing for high resolution imaging at low electron energies impinging the surface. Both of these are useful for imaging low conductivity and insulating materials without the need for conductive layer coatings. <br />
<br />
The system can accept a 6” wafer, but only XYZXYZ mm of the wafer is accessible with the stage movement. <br />
<br />
The [[SEM Sample Coater (Hummer)|'''<u>Hummer coater</u>''']] is used to deposit a thin AuPd on your samples, to reduce electrical charging of insulating samples (such as SiO2 substrates, or thick >1µm layers of SiO2 or PR).<br />
<br />
==Detailed Specifications==<br />
<br />
===Imaging===<br />
<br />
<br />
*Resolution:<br />
**1nm guaranteed at 15kV SEM mode<br />
**2.5nm at 1kV in SEM mode<br />
**1.5nm at 1kV in GB mode<br />
*Magnification: <br />
**SEM: x100 (at WD 25mm) to x1,000,000 (at WD 8mm)<br />
**Low-Mag LM mode: x25 to x19,000<br />
*Imaging Modes/Detectors:<br />
**SEI: secondary electron imaging<br />
**LM: Low-magnification mode<br />
**GB: Gentle-Beam mode<br />
***Applies negative voltage to sample stage to increase effective acceleration without increasing beam acceleration (reducing charging).<br />
**LABE: Low-Angle Backscatter Electron detector<br />
***Inserts between the objective lens and the sample<br />
***Strong contrast between materials<br />
**LEI: Lower Electron Detector<br />
***Detector is lower on chamber, creating strong topographical contrast.<br />
*Accelerating Voltages:<br />
**SEM: 0.5 to 30kV<br />
**GB: 0.1 to 4.0kV<br />
*Beam Currents: 10<sup>-13</sup> to 2x10<sup>-7</sup> A<br />
<br />
===Mechanical===<br />
<br />
*Max Sample Size: 6-inch wafer<br />
*Stage movement: <br />
**max: 70 x 50mm<br />
**4-inch wafer: limited to ~25x25mm movement area from wafer center.<br />
*Tilt: -5° to varies. Tilt is dependent on sample holder, stage height, and offset value. <br />
*Rotation: 360°<br />
*Specimen holders :<br />
**Copper and XYZ Carbon tape available<br />
**4-inch wafer with topside clips<br />
**1-inch holder for 30°/90°, 45°/90° mounting with tape or clips.<br />
<br />
==Operating Procedures==<br />
<br />
*J[https://wiki.nanofab.ucsb.edu/w/images/1/10/JEOL_IT800SHL_Operating_Procedure.docx EOL IT800SHL Operating Procedure].</div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=SEM_1_(JEOL_IT800SHL)&diff=161361SEM 1 (JEOL IT800SHL)2023-09-26T15:22:43Z<p>Hopkins a: /* Detailed Specifications */</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=SEM1_JEOL_IT800HSL.jpg<br />
|type = Inspection, Test and Characterization<br />
|super= Aidan Hopkins<br />
|super2= Bill Mitchell<br />
|location=Bay 1<br />
|description = JEOL 7600F FESEM<br />
|manufacturer = [http://www.jeolusa.com/PRODUCTS/ElectronOptics/ScanningElectronMicroscopesSEM/FESEM/JSM7600F/tabid/544/Default.aspx JEOL USA Inc]<br />
|materials = <br />
|toolid=<br />
}} <br />
==About==<br />
The JEOL IT800HSL Field Emission Scanning Electron Microscope is used for imaging a variety of samples made in the facility. <br />
<br />
===Capabilities===<br />
The system has multiple detectors, detailed below.<br />
Low-vacuum mode reduces sample charging by introducing N2 gas into the chamber, without sacrificing imaging quality (using a special vacuum nozzle on the electron column). Our system is equipped with a gentle-beam mode of operation where bias is put on the stage, allowing for high resolution imaging at low electron energies impinging the surface. Both of these are useful for imaging low conductivity and insulating materials without the need for conductive layer coatings. <br />
<br />
The system can accept a 6” wafer, but only XYZXYZ mm of the wafer is accessible with the stage movement. <br />
<br />
The [[SEM Sample Coater (Hummer)|'''<u>Hummer coater</u>''']] is used to deposit a thin AuPd on your samples, to reduce electrical charging of insulating samples (such as SiO2 substrates, or thick >1µm layers of SiO2 or PR).<br />
<br />
==Detailed Specifications==<br />
<br />
===Imaging===<br />
<br />
<br />
*Resolution:<br />
**1nm guaranteed at 15kV SEM mode<br />
**2.5nm at 1kV in SEM mode<br />
**1.5nm at 1kV in GB mode<br />
*Magnification: <br />
**SEM: x100 (at WD 25mm) to x1,000,000 (at WD 8mm)<br />
**Low-Mag LM mode: x25 to x19,000<br />
*Imaging Modes/Detectors:<br />
**SEI: secondary electron imaging<br />
**LM: Low-magnification mode<br />
**GB: Gentle-Beam mode<br />
***Applies negative voltage to sample stage to increase effective acceleration without increasing beam acceleration (reducing charging).<br />
**LABE: Low-Angle Backscatter Electron detector<br />
***Inserts between the objective lens and the sample<br />
***Strong contrast between materials<br />
**LEI: Lower Electron Detector<br />
***Detector is lower on chamber, creating strong topographical contrast.<br />
*Accelerating Voltages:<br />
**SEM: 0.5 to 30kV<br />
**GB: 0.1 to 4.0kV<br />
*Beam Currents: 10<sup>-13</sup> to 2x10<sup>-7</sup> A<br />
<br />
===Mechanical===<br />
<br />
*Max Sample Size: 4-inch wafer<br />
*Stage movement: <br />
**max: 70 x 50mm<br />
**4-inch wafer: limited to ~25x25mm movement area from wafer center.<br />
*Tilt: -5° to +70°<br />
*Rotation: 360°<br />
*Specimen holders :<br />
**Copper and XYZ Carbon tape available<br />
**4-inch wafer with topside clips<br />
**1-inch holder for 30°/90°, 45°/90° mounting with tape or clips.<br />
<br />
==Operating Procedures==<br />
<br />
*J[https://wiki.nanofab.ucsb.edu/w/images/1/10/JEOL_IT800SHL_Operating_Procedure.docx EOL IT800SHL Operating Procedure].</div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=SEM_1_(JEOL_IT800SHL)&diff=161360SEM 1 (JEOL IT800SHL)2023-09-26T15:22:10Z<p>Hopkins a: /* Operating Procedures */</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=SEM1_JEOL_IT800HSL.jpg<br />
|type = Inspection, Test and Characterization<br />
|super= Aidan Hopkins<br />
|super2= Bill Mitchell<br />
|location=Bay 1<br />
|description = JEOL 7600F FESEM<br />
|manufacturer = [http://www.jeolusa.com/PRODUCTS/ElectronOptics/ScanningElectronMicroscopesSEM/FESEM/JSM7600F/tabid/544/Default.aspx JEOL USA Inc]<br />
|materials = <br />
|toolid=<br />
}} <br />
==About==<br />
The JEOL IT800HSL Field Emission Scanning Electron Microscope is used for imaging a variety of samples made in the facility. <br />
<br />
===Capabilities===<br />
The system has multiple detectors, detailed below.<br />
Low-vacuum mode reduces sample charging by introducing N2 gas into the chamber, without sacrificing imaging quality (using a special vacuum nozzle on the electron column). Our system is equipped with a gentle-beam mode of operation where bias is put on the stage, allowing for high resolution imaging at low electron energies impinging the surface. Both of these are useful for imaging low conductivity and insulating materials without the need for conductive layer coatings. <br />
<br />
The system can accept a 6” wafer, but only XYZXYZ mm of the wafer is accessible with the stage movement. <br />
<br />
The [[SEM Sample Coater (Hummer)|'''<u>Hummer coater</u>''']] is used to deposit a thin AuPd on your samples, to reduce electrical charging of insulating samples (such as SiO2 substrates, or thick >1µm layers of SiO2 or PR).<br />
<br />
==Detailed Specifications==<br />
<br />
===Imaging===<br />
<br />
{{Todo|UPDATE - these are from the SEM2 page}}<br />
<br />
*Resolution:<br />
**1nm guaranteed at 15kV SEM mode<br />
**2.5nm at 1kV in SEM mode<br />
**1.5nm at 1kV in GB mode<br />
*Magnification: <br />
**SEM: x100 (at WD 25mm) to x1,000,000 (at WD 8mm)<br />
**Low-Mag LM mode: x25 to x19,000<br />
*Imaging Modes/Detectors:<br />
**SEI: secondary electron imaging<br />
**LM: Low-magnification mode<br />
**GB: Gentle-Beam mode<br />
***Applies negative voltage to sample stage to increase effective acceleration without increasing beam acceleration (reducing charging).<br />
**LABE: Low-Angle Backscatter Electron detector<br />
***Inserts between the objective lens and the sample<br />
***Strong contrast between materials<br />
**LEI: Lower Electron Detector<br />
***Detector is lower on chamber, creating strong topographical contrast.<br />
*Accelerating Voltages:<br />
**SEM: 0.5 to 30kV<br />
**GB: 0.1 to 4.0kV<br />
*Beam Currents: 10<sup>-13</sup> to 2x10<sup>-7</sup> A<br />
<br />
===Mechanical===<br />
<br />
*Max Sample Size: 4-inch wafer<br />
*Stage movement: <br />
**max: 70 x 50mm<br />
**4-inch wafer: limited to ~25x25mm movement area from wafer center.<br />
*Tilt: -5° to +70°<br />
*Rotation: 360°<br />
*Specimen holders :<br />
**Copper and XYZ Carbon tape available<br />
**4-inch wafer with topside clips<br />
**1-inch holder for 30°/90°, 45°/90° mounting with tape or clips.<br />
<br />
==Operating Procedures==<br />
<br />
*J[https://wiki.nanofab.ucsb.edu/w/images/1/10/JEOL_IT800SHL_Operating_Procedure.docx EOL IT800SHL Operating Procedure].</div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:JEOL_IT800SHL_Operating_Procedure.docx&diff=161359File:JEOL IT800SHL Operating Procedure.docx2023-09-26T15:21:23Z<p>Hopkins a: </p>
<hr />
<div></div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=SEM_1_(JEOL_IT800SHL)&diff=161358SEM 1 (JEOL IT800SHL)2023-09-26T15:20:52Z<p>Hopkins a: /* Operating Procedures */</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=SEM1_JEOL_IT800HSL.jpg<br />
|type = Inspection, Test and Characterization<br />
|super= Aidan Hopkins<br />
|super2= Bill Mitchell<br />
|location=Bay 1<br />
|description = JEOL 7600F FESEM<br />
|manufacturer = [http://www.jeolusa.com/PRODUCTS/ElectronOptics/ScanningElectronMicroscopesSEM/FESEM/JSM7600F/tabid/544/Default.aspx JEOL USA Inc]<br />
|materials = <br />
|toolid=<br />
}} <br />
==About==<br />
The JEOL IT800HSL Field Emission Scanning Electron Microscope is used for imaging a variety of samples made in the facility. <br />
<br />
===Capabilities===<br />
The system has multiple detectors, detailed below.<br />
Low-vacuum mode reduces sample charging by introducing N2 gas into the chamber, without sacrificing imaging quality (using a special vacuum nozzle on the electron column). Our system is equipped with a gentle-beam mode of operation where bias is put on the stage, allowing for high resolution imaging at low electron energies impinging the surface. Both of these are useful for imaging low conductivity and insulating materials without the need for conductive layer coatings. <br />
<br />
The system can accept a 6” wafer, but only XYZXYZ mm of the wafer is accessible with the stage movement. <br />
<br />
The [[SEM Sample Coater (Hummer)|'''<u>Hummer coater</u>''']] is used to deposit a thin AuPd on your samples, to reduce electrical charging of insulating samples (such as SiO2 substrates, or thick >1µm layers of SiO2 or PR).<br />
<br />
==Detailed Specifications==<br />
<br />
===Imaging===<br />
<br />
{{Todo|UPDATE - these are from the SEM2 page}}<br />
<br />
*Resolution:<br />
**1nm guaranteed at 15kV SEM mode<br />
**2.5nm at 1kV in SEM mode<br />
**1.5nm at 1kV in GB mode<br />
*Magnification: <br />
**SEM: x100 (at WD 25mm) to x1,000,000 (at WD 8mm)<br />
**Low-Mag LM mode: x25 to x19,000<br />
*Imaging Modes/Detectors:<br />
**SEI: secondary electron imaging<br />
**LM: Low-magnification mode<br />
**GB: Gentle-Beam mode<br />
***Applies negative voltage to sample stage to increase effective acceleration without increasing beam acceleration (reducing charging).<br />
**LABE: Low-Angle Backscatter Electron detector<br />
***Inserts between the objective lens and the sample<br />
***Strong contrast between materials<br />
**LEI: Lower Electron Detector<br />
***Detector is lower on chamber, creating strong topographical contrast.<br />
*Accelerating Voltages:<br />
**SEM: 0.5 to 30kV<br />
**GB: 0.1 to 4.0kV<br />
*Beam Currents: 10<sup>-13</sup> to 2x10<sup>-7</sup> A<br />
<br />
===Mechanical===<br />
<br />
*Max Sample Size: 4-inch wafer<br />
*Stage movement: <br />
**max: 70 x 50mm<br />
**4-inch wafer: limited to ~25x25mm movement area from wafer center.<br />
*Tilt: -5° to +70°<br />
*Rotation: 360°<br />
*Specimen holders :<br />
**Copper and XYZ Carbon tape available<br />
**4-inch wafer with topside clips<br />
**1-inch holder for 30°/90°, 45°/90° mounting with tape or clips.<br />
<br />
==Operating Procedures==<br />
*JEOL IT800SHL Operating Procedure.</div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Automated_Wafer_Cleaver_(Loomis_LSD-155LT)&diff=161357Automated Wafer Cleaver (Loomis LSD-155LT)2023-09-26T15:16:15Z<p>Hopkins a: </p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=IMG_0554.jpg<br />
|type = Packaging<br />
|super= Aidan Hopkins<br />
|super2= <br />
|location=Backend Lab: ESB 1111<br />
|description = Loomis Automated Wafer Cleaver<br />
|model = LSD-155LT<br />
|manufacturer = Loomis Industries Inc.<br />
|materials = III-V's, thin Silicon<br />
|toolid=<br />
}} <br />
==About==<br />
The Loomis LSD-155Lt is a production scribe and break system that can be used for processing large grids, arrays of laser bars, cleaving high quality mirror facets, and dicing wafers.<br />
<br />
==Detailed Specifications==<br />
<br />
*Maximum Wafer Size: 4"<br />
*Parts mounted to low tack tape and used in conjunction with 6" plastic rings.<br />
*Automated cut maps at multiple angles (0° and 90° typical)<br />
*~few micron alignment to on-wafer features.<br />
*Multiple scribe and cleave options including 'scribe and break', 'notch and cleave', and 'peck and cleave'.<br />
*Users should try and follow the 3 to 1 ratio (distance between cleaves should be 3X the thickness of the substrate) although some material like InP and GaAs can occasionally be cleaved closer to 2 to 1.<br />
<br />
==Operating Procedures==<br />
<br />
*[https://wiki.nanofab.ucsb.edu/w/images/d/d6/Loomis_Scriber_SOP.docx Loomis LSD-155LT Standard Operating Procedure]<br />
<br />
==Recipes==<br />
<br />
*Recipes > Packaging > '''[[Wafer Cleaver Recipes (LSD-155LT)]]'''<br />
*Wafer thinning is critical, see the Wafer Lapping (Allied XYZ) tool as well.</div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:Loomis_Scriber_SOP.docx&diff=161356File:Loomis Scriber SOP.docx2023-09-26T15:15:07Z<p>Hopkins a: </p>
<hr />
<div></div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Wafer_Bonder_(SUSS_SB6-8E)&diff=161329Wafer Bonder (SUSS SB6-8E)2023-09-20T17:53:18Z<p>Hopkins a: /* Documentation */</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=WaferBonder.jpg<br />
|type = Thermal Processing<br />
|super= Aidan Hopkins<br />
|super2= Lee Sawyer<br />
|phone=(805)839-3918x216<br />
|location=Bay 7<br />
|email=freeborn@ece.ucsb.edu<br />
|description = Karl Suss Substrate Bonder<br />
|manufacturer = Karl Suss America<br />
|materials = <br />
|toolid=41<br />
}} <br />
=About=<br />
This is Karl-Suss model SB-6 substrate bonder. Wafer bonding of pieces to 6” wafers can be done at pressures from 5e-5 to 3e3 mBar and from 50°C to 550°C. This tool mates with the Karl-Suss MA-6 aligner to allow for aligned bonding. Forces up to 20 kN for a 150 mm wafer size are available. The system supports thermal compression as well as anodic bonding (up to 2000 V). The system is computer controlled with a windows environment allowing for multiple recipe steps and saving of recipes and data. The system is configured for manual loading of wafers.<br />
<br />
=Detailed Specifications=<br />
<br />
*Wafer bonding from 50°C to 550°C, +/- 5 degrees accuracy, +/- 3% uniformity<br />
*Upper and lower heating of samples<br />
*5e-5 to 3e3 Torr environment bonding pressure, with Nitrogen<br />
*Sample size: pieces to 6” wafers, aligned bonding by using the [[Contact Aligner (SUSS MA-6)|MA/BA-6 aligner]] - contact supervisor for setup.<br />
*Anodic bonding to 2000 V<br />
*Windows-based computer control<br />
*Wafer bonder currently set up for 4" wafers<br />
<br />
=Documentation=<br />
<br />
*[https://wiki.nanofab.ucsb.edu/w/images/1/12/Bonder_Pressure_Rules_Vis_Aid.docx Bonder Pressure Rules Visual Aid]<br />
*[https://wiki.nanofab.ucsb.edu/w/images/5/5c/Suss_Bonder_Recipe_Guidelines.docx Bonder Recipe Guidelines]</div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Wafer_Bonder_(SUSS_SB6-8E)&diff=161327Wafer Bonder (SUSS SB6-8E)2023-09-20T14:33:42Z<p>Hopkins a: </p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=WaferBonder.jpg<br />
|type = Thermal Processing<br />
|super= Aidan Hopkins<br />
|super2= Lee Sawyer<br />
|phone=(805)839-3918x216<br />
|location=Bay 7<br />
|email=freeborn@ece.ucsb.edu<br />
|description = Karl Suss Substrate Bonder<br />
|manufacturer = Karl Suss America<br />
|materials = <br />
|toolid=41<br />
}} <br />
=About=<br />
This is Karl-Suss model SB-6 substrate bonder. Wafer bonding of pieces to 6” wafers can be done at pressures from 5e-5 to 3e3 mBar and from 50°C to 550°C. This tool mates with the Karl-Suss MA-6 aligner to allow for aligned bonding. Forces up to 20 kN for a 150 mm wafer size are available. The system supports thermal compression as well as anodic bonding (up to 2000 V). The system is computer controlled with a windows environment allowing for multiple recipe steps and saving of recipes and data. The system is configured for manual loading of wafers.<br />
<br />
=Detailed Specifications=<br />
<br />
*Wafer bonding from 50°C to 550°C, +/- 5 degrees accuracy, +/- 3% uniformity<br />
*Upper and lower heating of samples<br />
*5e-5 to 3e3 Torr environment bonding pressure, with Nitrogen<br />
*Sample size: pieces to 6” wafers, aligned bonding by using the [[Contact Aligner (SUSS MA-6)|MA/BA-6 aligner]] - contact supervisor for setup.<br />
*Anodic bonding to 2000 V<br />
*Windows-based computer control<br />
*Wafer bonder currently set up for 4" wafers<br />
<br />
=Documentation=<br />
<br />
*Bonder Pressure Rules Visual Aid<br />
*[https://wiki.nanofab.ucsb.edu/w/images/5/5c/Suss_Bonder_Recipe_Guidelines.docx Bonder Recipe Guidelines]</div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:Suss_Bonder_Recipe_Guidelines.docx&diff=161326File:Suss Bonder Recipe Guidelines.docx2023-09-20T14:28:59Z<p>Hopkins a: Bonder Recipe Guidelines</p>
<hr />
<div>== Summary ==<br />
Bonder Recipe Guidelines</div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Wafer_Bonder_(SUSS_SB6-8E)&diff=161325Wafer Bonder (SUSS SB6-8E)2023-09-20T14:24:56Z<p>Hopkins a: </p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=WaferBonder.jpg<br />
|type = Thermal Processing<br />
|super= Aidan Hopkins<br />
|super2= Lee Sawyer<br />
|phone=(805)839-3918x216<br />
|location=Bay 7<br />
|email=freeborn@ece.ucsb.edu<br />
|description = Karl Suss Substrate Bonder<br />
|manufacturer = Karl Suss America<br />
|materials = <br />
|toolid=41<br />
}} <br />
=About=<br />
This is Karl-Suss model SB-6 substrate bonder. Wafer bonding of pieces to 6” wafers can be done at pressures from 5e-5 to 3e3 mBar and from 50°C to 550°C. This tool mates with the Karl-Suss MA-6 aligner to allow for aligned bonding. Forces up to 20 kN for a 150 mm wafer size are available. The system supports thermal compression as well as anodic bonding (up to 2000 V). The system is computer controlled with a windows environment allowing for multiple recipe steps and saving of recipes and data. The system is configured for manual loading of wafers.<br />
<br />
=Detailed Specifications=<br />
<br />
*Wafer bonding from 50°C to 550°C, +/- 5 degrees accuracy, +/- 3% uniformity<br />
*Upper and lower heating of samples<br />
*5e-5 to 3e3 Torr environment bonding pressure, with Nitrogen<br />
*Sample size: pieces to 6” wafers, aligned bonding by using the [[Contact Aligner (SUSS MA-6)|MA/BA-6 aligner]] - contact supervisor for setup.<br />
*Anodic bonding to 2000 V<br />
*Windows-based computer control<br />
*Wafer bonder currently set up for 4" wafers<br />
<br />
=Documentation=<br />
*Bonder Pressure Rules Visual Aid<br />
*Bonder Recipe Guidelines</div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:Bonder_Pressure_Rules_Vis_Aid.docx&diff=161324File:Bonder Pressure Rules Vis Aid.docx2023-09-20T14:21:29Z<p>Hopkins a: Bonder Pressure Rules Visual Aid</p>
<hr />
<div>== Summary ==<br />
Bonder Pressure Rules Visual Aid</div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Template:Announcements&diff=161277Template:Announcements2023-08-29T22:32:42Z<p>Hopkins a: /* SEM 2 Update */</p>
<hr />
<div><startfeed /><br />
=====SEM 2 is Up=====<br />
JEOL has finished will the install and the SEM is available to use if you've received training on SEM #1.<br />
[[User:Hopkins a|Hopkins a]] 15:32, 29 August 2023 (PDT)<br />
<br />
=====Plasma Activation (EVG 810)=====<br />
We have received almost all the replacement parts for the tool except the new chuck. The original delivery date of mid June has now been pushed out to early September and they have stated that this is the best that their supplier can do. I will not be installing any new parts on the tool until we have everything.<br />
Runs will still require Staff supervision until then.<br />
//[[User:Mehalana v|Vraj Mehalana]] 18:01, 2 May 2023 (PDT)<br />
<br />
<!--<br />
SEE THE BOTTOM OF THIS PAGE FOR DETAILED INSTRUCTIONS ON ADDING NEWS ITEMS.<br />
In order for your post to show up correctly, you need to:<br />
>> Use FIVE equal-signs for the Title's heading level. eg.: ===== my post =====<br />
>> Use two slashes // and FOUR tilde's to insert your signature at the end of your post: //~~~~<br />
--><br />
<!----------------------------------------------><br />
<!------------- Equipment Status ----------------><br />
<br />
<br />
<!---------- end of Equipment Status ------------><br />
<!---------DO NOT EDIT BELOW THIS LINE-----------><br />
<endfeed /><br />
<noinclude>[[Category:Templates]]</noinclude><br />
<!--------------------------------------------<br />
====== HOW TO ADD ITEMS ======<br />
* You can copy/paste the example below for a new news item.<br />
* Use level 5 heading for each item (5 equal signs surrounding the title) - they will show up as separate RSS items this way. (This looks best on the Wiki homepage)<br />
* You must add a user signature at the end of each post via four tildes: [[User:Silva|Silva]] 13:26, 4 February 2023 (PST). Required for the RSS plugin to determine the timestamp, or else post goes to the end of the RSS feed. <br />
* Use double-slash: // at start of new lines - makes display on the Samsung Display look a lot better, since it strips newlines.<br />
* Optional: After saving the page, delete the name after the two dashes "--" and delete the "[[(talk)...]]" link. <br />
* Please use "There are no announcements at this time." if the announcements are empty.<br />
<br />
* URL to the RSS feed via FeedBurner (for Samsung display): http://wiki.nanotech.ucsb.edu/w/index.php?title=Template:Announcements&action=feed&feed=rss<br />
* URL to the RSS feed directly from Wiki: https://wiki.nanotech.ucsb.edu/w/index.php?title=Template:Announcements&action=feed&feed=rss<br />
<br />
<br />
******** EXAMPLE OF A NEW POST ********<br />
<br />
===== NanoFab making LN2 icecream =====<br />
Tomorrow the NanoFab will be serving liquid nitrogen ice cream.<br />
// [[User:Silva|Silva]] 13:26, 4 February 2023 (PST)<br />
<br />
************* (end of example) **************<br />
The [[User:Silva|Silva]] 13:26, 4 February 2023 (PST) will be replaced with your username & timestamp after you submit the post.<br />
----------------------------------------------></div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Automated_Wafer_Cleaver_(Loomis_LSD-155LT)&diff=161248Automated Wafer Cleaver (Loomis LSD-155LT)2023-08-16T18:06:20Z<p>Hopkins a: </p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=IMG_0554.jpg<br />
|type = Packaging<br />
|super= Aidan Hopkins<br />
|super2= <br />
|location=Backend Lab: ESB 1111<br />
|description = Loomis Automated Wafer Cleaver<br />
|model = LSD-155LT<br />
|manufacturer = Loomis Industries Inc.<br />
|materials = III-V's, thin Silicon<br />
|toolid=<br />
}} <br />
==About==<br />
The Loomis LSD-155Lt is a production scribe and break system that can be used for processing large grids, arrays of laser bars, cleaving high quality mirror facets, and dicing wafers.<br />
<br />
==Detailed Specifications==<br />
<br />
*Maximum Wafer Size: 4"<br />
*Parts mounted to low tack tape and used in conjunction with 6" plastic rings.<br />
*Automated cut maps at multiple angles (0° and 90° typical)<br />
*~few micron alignment to on-wafer features.<br />
*Multiple scribe and cleave options including 'scribe and break', 'notch and cleave', and 'peck and cleave'.<br />
*Users should try and follow the 3 to 1 ratio (distance between cleaves should be 3X the thickness of the substrate) although some material like InP and GaAs can occasionally be cleaved closer to 2 to 1.<br />
<br />
==Operating Procedures==<br />
<br />
*[https://wiki.nanotech.ucsb.edu/LoomisSOP.pdf Loomis LSD-155LT Standard Operating Procedure]<br />
<br />
==Recipes==<br />
<br />
*Recipes > Packaging > '''[[Wafer Cleaver Recipes (LSD-155LT)]]'''<br />
*Wafer thinning is critical, see the Wafer Lapping (Allied XYZ) tool as well.</div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:IMG_0554.jpg&diff=161247File:IMG 0554.jpg2023-08-16T17:59:41Z<p>Hopkins a: </p>
<hr />
<div></div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Automated_Wafer_Cleaver_(Loomis_LSD-155LT)&diff=161105Automated Wafer Cleaver (Loomis LSD-155LT)2023-05-16T15:04:10Z<p>Hopkins a: /* Detailed Specifications */</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=LoomisLSD155lt.jpg<br />
|type = Packaging<br />
|super= Aidan Hopkins<br />
|super2= <br />
|location=Backend Lab: ESB 1111<br />
|description = Loomis Automated Wafer Cleaver<br />
|model = LSD-155LT<br />
|manufacturer = Loomis Industries Inc.<br />
|materials = III-V's, thin Silicon<br />
|toolid=<br />
}} <br />
==About==<br />
The Loomis LSD-155Lt is a production scribe and break system that can be used for processing large grids, arrays of laser bars, cleaving high quality mirror facets, and dicing wafers.<br />
<br />
==Detailed Specifications==<br />
<br />
*Maximum Wafer Size: 4"<br />
*Parts mounted to low tack tape and used in conjunction with 6" plastic rings.<br />
*Automated cut maps at multiple angles (0° and 90° typical)<br />
*~few micron alignment to on-wafer features.<br />
*Multiple scribe and cleave options including 'scribe and break', 'notch and cleave', and 'peck and cleave'.<br />
*Users should try and follow the 3 to 1 ratio (distance between cleaves should be 3X the thickness of the substrate) although some material like InP and GaAs can occasionally be cleaved closer to 2 to 1.<br />
<br />
==Operating Procedures==<br />
<br />
*[https://wiki.nanotech.ucsb.edu/LoomisSOP.pdf Loomis LSD-155LT Standard Operating Procedure]<br />
<br />
==Recipes==<br />
<br />
*Recipes > Packaging > '''Wafer Cleaver Recipes (LSD-155LT)'''<br />
*Wafer thinning is critical, see the Wafer Lapping (Allied XYZ) tool as well.</div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Automated_Wafer_Cleaver_(Loomis_LSD-155LT)&diff=161104Automated Wafer Cleaver (Loomis LSD-155LT)2023-05-16T14:59:30Z<p>Hopkins a: /* About */</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=LoomisLSD155lt.jpg<br />
|type = Packaging<br />
|super= Aidan Hopkins<br />
|super2= <br />
|location=Backend Lab: ESB 1111<br />
|description = Loomis Automated Wafer Cleaver<br />
|model = LSD-155LT<br />
|manufacturer = Loomis Industries Inc.<br />
|materials = III-V's, thin Silicon<br />
|toolid=<br />
}} <br />
==About==<br />
The Loomis LSD-155Lt is a production scribe and break system that can be used for processing large grids, arrays of laser bars, cleaving high quality mirror facets, and dicing wafers.<br />
<br />
==Detailed Specifications==<br />
<br />
*Maximum Wafer Size: 4"<br />
*Parts mounted to low tack tape and used in conjunction with 6" plastic rings.<br />
*Automated cut maps at multiple angles (0° and 90° typical)<br />
*~few micron alignment to on-wafer features.<br />
*TBD<br />
<br />
==Operating Procedures==<br />
<br />
*[https://wiki.nanotech.ucsb.edu/LoomisSOP.pdf Loomis LSD-155LT Standard Operating Procedure]<br />
<br />
==Recipes==<br />
<br />
*Recipes > Packaging > '''Wafer Cleaver Recipes (LSD-155LT)'''<br />
*Wafer thinning is critical, see the Wafer Lapping (Allied XYZ) tool as well.</div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Aidan_Hopkins&diff=161041Aidan Hopkins2023-04-13T14:20:13Z<p>Hopkins a: /* Tools */</p>
<hr />
<div>{{staff|{{PAGENAME}}<br />
|position = Facility Staff Manager<br />
|room = 1109B<br />
|phone = (805) 893-2343<br />
|cell = (805) 450-2890<br />
|email = hopkins@ece.ucsb.edu<br />
}}<br />
<br />
=About=<br />
Aidan moved to Santa Barbara in 2000 to attend college at UCSB. During his junior year Aidan was hired part time to help out with the Engineering II cleanroom. Over the next year and half Aidan helped with the transition of moving the cleanroom to the Engineering Science Building. Once he graduated in 2005, Aidan was hired on full time as an Assistant Development Engineer. Aidan gained valuable experience supporting the lab on both the equipment and facility side and in 2012 he became a Senior Development Engineer. In 2017 Aidan became the Facility Staff Manager. Aidan transitioned back to a Senior Development Engineer in 2022.<br />
<br />
=Current Work=<br />
Aidan is a Senior Development Engineer.<br />
<br />
=Tools=<br />
Aidan Hopkins is in charge of the following tools: <br />
{|<br />
|- valign="top"<br />
| width="300" |<br />
*[[RIE 5 (PlasmaTherm)|RIE #5 (Plasma Therm SLR)]]<br />
*[[Wafer_Bonder_(SUSS_SB6-8E)]]<br />
*[[Field_Emission_SEM_2_(JEOL_7600F)]]<br />
*[[Field Emission SEM 1 (FEI Sirion)]]<br />
*[[DSEIII_(PlasmaTherm/Deep_Silicon_Etcher)]]<br />
*[[Dektak XT (Bruker)]]<br />
*[[Scribe and Break (Loomis)]]<br />
||<br />
*Wet Benches<br />
**[[Wet_Benches#Wafer_Toxic_Corrosive_Benches|Wafer Toxic Corrosive]]<br />
<br />
|}</div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Aidan_Hopkins&diff=161040Aidan Hopkins2023-04-13T14:18:47Z<p>Hopkins a: /* About */</p>
<hr />
<div>{{staff|{{PAGENAME}}<br />
|position = Facility Staff Manager<br />
|room = 1109B<br />
|phone = (805) 893-2343<br />
|cell = (805) 450-2890<br />
|email = hopkins@ece.ucsb.edu<br />
}}<br />
<br />
=About=<br />
Aidan moved to Santa Barbara in 2000 to attend college at UCSB. During his junior year Aidan was hired part time to help out with the Engineering II cleanroom. Over the next year and half Aidan helped with the transition of moving the cleanroom to the Engineering Science Building. Once he graduated in 2005, Aidan was hired on full time as an Assistant Development Engineer. Aidan gained valuable experience supporting the lab on both the equipment and facility side and in 2012 he became a Senior Development Engineer. In 2017 Aidan became the Facility Staff Manager. Aidan transitioned back to a Senior Development Engineer in 2022.<br />
<br />
=Current Work=<br />
Aidan is a Senior Development Engineer.<br />
<br />
=Tools=<br />
Aidan Hopkins is in charge of the following tools: <br />
{|<br />
|- valign="top"<br />
| width="300" |<br />
*[[RIE 5 (PlasmaTherm)|RIE #5 (Plasma Therm SLR)]]<br />
*[[Wafer_Bonder_(SUSS_SB6-8E)]]<br />
*[[Field_Emission_SEM_2_(JEOL_7600F)]]<br />
*[[Field Emission SEM 1 (FEI Sirion)]]<br />
*[[Plasma Clean (Gasonics 2000)]]<br />
*[[DSEIII_(PlasmaTherm/Deep_Silicon_Etcher)]]<br />
||<br />
*Wet Benches<br />
**[[Wet_Benches#Wafer_Toxic_Corrosive_Benches|Wafer Toxic Corrosive]]<br />
<br />
|}</div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Aidan_Hopkins&diff=161039Aidan Hopkins2023-04-13T14:18:04Z<p>Hopkins a: /* Current Work */</p>
<hr />
<div>{{staff|{{PAGENAME}}<br />
|position = Facility Staff Manager<br />
|room = 1109B<br />
|phone = (805) 893-2343<br />
|cell = (805) 450-2890<br />
|email = hopkins@ece.ucsb.edu<br />
}}<br />
<br />
=About=<br />
Aidan moved to Santa Barbara in 2000 to attend college at UCSB. During his junior year Aidan was hired part time to help out with the Engineering II cleanroom. Over the next year and half Aidan helped with the transition of moving the cleanroom to the Engineering Science Building. Once he graduated in 2005, Aidan was hired on full time as an Assistant Development Engineer. Aidan gained valuable experience supporting the lab on both the equipment and facility side and in 2012 he became a Senior Development Engineer. In 2017 Aidan became the Facility Staff Manager.<br />
<br />
=Current Work=<br />
Aidan is a Senior Development Engineer.<br />
<br />
=Tools=<br />
Aidan Hopkins is in charge of the following tools: <br />
{|<br />
|- valign="top"<br />
| width="300" |<br />
*[[RIE 5 (PlasmaTherm)|RIE #5 (Plasma Therm SLR)]]<br />
*[[Wafer_Bonder_(SUSS_SB6-8E)]]<br />
*[[Field_Emission_SEM_2_(JEOL_7600F)]]<br />
*[[Field Emission SEM 1 (FEI Sirion)]]<br />
*[[Plasma Clean (Gasonics 2000)]]<br />
*[[DSEIII_(PlasmaTherm/Deep_Silicon_Etcher)]]<br />
||<br />
*Wet Benches<br />
**[[Wet_Benches#Wafer_Toxic_Corrosive_Benches|Wafer Toxic Corrosive]]<br />
<br />
|}</div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Step_Profilometer_(DektakXT)&diff=160955Step Profilometer (DektakXT)2023-02-22T23:57:11Z<p>Hopkins a: /* Tool References */</p>
<hr />
<div> '''The Dektak 6M has been replaced by a new Dektak XT.'''<br />
{{tool2|{{PAGENAME}}<br />
|picture=Dektak6M.jpg<br />
|type = Inspection, Test and Characterization<br />
|super= Aidan Hopkins<br />
|super2= Bill Millerski<br />
|phone=(805)839-3918x219<br />
|location=Bay 3<br />
|email=silva@ece.ucsb.edu<br />
|description = Surface Profilometer<br />
|manufacturer = Bruker<br />
|materials = <br />
}} <br />
=About=<br />
The DektakXT is a profilometer for measuring step heights or trench depths on a surface. This is a surface contact measurement technique where a very low force stylus is dragged across a surface. The DektakXT offers Windows based data acquisition, data analysis, and equipment control. The force of the tip on the surface is adjustable from .03 mg to 15 mg, allowing for the measuring of hard and soft surfaces. A stress measurement option is also included with this tool. The profilometer can measure to a depth of over 1 mm, allowing for direct measurement of MEMS type structures. Lateral resolution is tip-shape dependent and vertical resolution is 1A (when using the 6.55 um range). The lateral resolution is limited by the tip shape. A video camera with variable magnification allows for manual placement of the stylus using the manual X, Y, Theta stage. Software analysis can determine roughness, average step height, etc.<br />
<br />
=Detailed Specifications=<br />
<br />
*50 mm maximum sample thickness/8 inch maximum sample diameter<br />
*.03 mg to 15 mg variable tip force<br />
*Height/Depth measurements to 1 mm<br />
*4 A repeatability on 0.1 um step and vertical resolution of 0.1 um<br />
*Standard stylus radius is 12.5 um, optional 2 um stylus available<br />
*6 inch stage diameter with manual controls for moving and leveling<br />
*Maximum scan length of 55mm (minimum of 50um)<br />
*Software data leveling and other analysis including stress and roughness<br />
*Full GUI-based Windows control and data storage and exporting capability<br />
<br />
=Tool References=<br />
<br />
*[https://wiki.nanotech.ucsb.edu/w/images/6/6c/DektakXT_Operating_Procedure.pdf DektakXT SOP]<br />
*[https://www.youtube.com/watch?v=HINRiQ7XUwE DektakXT Pre-Training Video]</div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Step_Profilometer_(DektakXT)&diff=160954Step Profilometer (DektakXT)2023-02-22T14:57:43Z<p>Hopkins a: </p>
<hr />
<div> '''The Dektak 6M has been replaced by a new Dektak XT.'''<br />
{{tool2|{{PAGENAME}}<br />
|picture=Dektak6M.jpg<br />
|type = Inspection, Test and Characterization<br />
|super= Aidan Hopkins<br />
|super2= Bill Millerski<br />
|phone=(805)839-3918x219<br />
|location=Bay 3<br />
|email=silva@ece.ucsb.edu<br />
|description = Surface Profilometer<br />
|manufacturer = Bruker<br />
|materials = <br />
}} <br />
=About=<br />
The DektakXT is a profilometer for measuring step heights or trench depths on a surface. This is a surface contact measurement technique where a very low force stylus is dragged across a surface. The DektakXT offers Windows based data acquisition, data analysis, and equipment control. The force of the tip on the surface is adjustable from .03 mg to 15 mg, allowing for the measuring of hard and soft surfaces. A stress measurement option is also included with this tool. The profilometer can measure to a depth of over 1 mm, allowing for direct measurement of MEMS type structures. Lateral resolution is tip-shape dependent and vertical resolution is 1A (when using the 6.55 um range). The lateral resolution is limited by the tip shape. A video camera with variable magnification allows for manual placement of the stylus using the manual X, Y, Theta stage. Software analysis can determine roughness, average step height, etc.<br />
<br />
=Detailed Specifications=<br />
<br />
*50 mm maximum sample thickness/8 inch maximum sample diameter<br />
*.03 mg to 15 mg variable tip force<br />
*Height/Depth measurements to 1 mm<br />
*4 A repeatability on 0.1 um step and vertical resolution of 0.1 um<br />
*Standard stylus radius is 12.5 um, optional 2 um stylus available<br />
*6 inch stage diameter with manual controls for moving and leveling<br />
*Maximum scan length of 55mm (minimum of 50um)<br />
*Software data leveling and other analysis including stress and roughness<br />
*Full GUI-based Windows control and data storage and exporting capability<br />
<br />
=Tool References=<br />
<br />
*[https://wiki.nanotech.ucsb.edu/w/images/6/6c/DektakXT_Operating_Procedure.pdf DektakXT SOP]<br />
*[https://www.youtube.com/watch?v=HINRiQ7XUwE DektakXT Pre-Training Video]<br />
*[https://bruker-my.sharepoint.com/:f:/p/nicholas_doroz/Egv0_OjHda5KiF37z9j23DoBYSkZjzUBAw03eUHdPKV2vw?email=ahop21%40ucsb.edu&e=5msWjG Off-line Vision 64 software]</div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Step_Profilometer_(DektakXT)&diff=160953Step Profilometer (DektakXT)2023-02-22T14:56:34Z<p>Hopkins a: /* Tool References */</p>
<hr />
<div> '''The Dektak 6M has been replaced by a new Dektak XT.'''<br />
{{tool2|{{PAGENAME}}<br />
|picture=Dektak6M.jpg<br />
|type = Inspection, Test and Characterization<br />
|super= Aidan Hopkins<br />
|super2= Bill Millerski<br />
|phone=(805)839-3918x219<br />
|location=Bay 3<br />
|email=silva@ece.ucsb.edu<br />
|description = Surface Profilometer<br />
|manufacturer = Bruker<br />
|materials = <br />
}} <br />
=About=<br />
The DektakXT is a profilometer for measuring step heights or trench depths on a surface. This is a surface contact measurement technique where a very low force stylus is dragged across a surface. The DektakXT offers Windows based data acquisition, data analysis, and equipment control. The force of the tip on the surface is adjustable from .03 mg to 15 mg, allowing for the measuring of hard and soft surfaces. A stress measurement option is also included with this tool. The profilometer can measure to a depth of over 1 mm, allowing for direct measurement of MEMS type structures. Lateral resolution is tip-shape dependent and vertical resolution is 1A (when using the 6.55 um range). The lateral resolution is limited by the tip shape. A video camera with variable magnification allows for manual placement of the stylus using the manual X, Y, Theta stage. Software analysis can determine roughness, average step height, etc.<br />
<br />
=Detailed Specifications=<br />
<br />
*50 mm maximum sample thickness/8 inch maximum sample diameter<br />
*.03 mg to 15 mg variable tip force<br />
*Height/Depth measurements to 1 mm<br />
*4 A repeatability on 0.1 um step and vertical resolution of 0.1 um<br />
*Standard stylus radius is 12.5 um, optional 2 um stylus available<br />
*6 inch stage diameter with manual controls for moving and leveling<br />
*Maximum scan length of 55mm (minimum of 50um)<br />
*Software data leveling and other analysis including stress and roughness<br />
*Full GUI-based Windows control and data storage and exporting capability<br />
<br />
=Tool References=<br />
<br />
*[https://wiki.nanotech.ucsb.edu/w/images/6/6c/DektakXT_Operating_Procedure.pdf DektakXT SOP]<br />
*[https://www.youtube.com/watch?v=HINRiQ7XUwE DektakXT Pre-Training Video]<br />
*[https://bruker-my.sharepoint.com/:f:/p/nicholas_doroz/Egv0_OjHda5KiF37z9j23DoBYSkZjzUBAw03eUHdPKV2vw?email=ahop21%40ucsb.edu&e=5msWjG]</div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Step_Profilometer_(DektakXT)&diff=160910Step Profilometer (DektakXT)2023-02-01T15:06:26Z<p>Hopkins a: /* Tool References */</p>
<hr />
<div> '''The Dektak 6M has been removed from the lab, and a new Dektak XT is currently being qualified. 2023-01-20'''<br />
{{tool2|{{PAGENAME}}<br />
|picture=Dektak6M.jpg<br />
|type = Inspection, Test and Characterization<br />
|super= Aidan Hopkins<br />
|super2= Bill Millerski<br />
|phone=(805)839-3918x219<br />
|location=Bay 3<br />
|email=silva@ece.ucsb.edu<br />
|description = Surface Profilometer<br />
|manufacturer = Bruker<br />
|materials = <br />
}} <br />
=About=<br />
The DektakXT is a profilometer for measuring step heights or trench depths on a surface. This is a surface contact measurement technique where a very low force stylus is dragged across a surface. The DektakXT offers Windows based data acquisition, data analysis, and equipment control. The force of the tip on the surface is adjustable from .03 mg to 15 mg, allowing for the measuring of hard and soft surfaces. A stress measurement option is also included with this tool. The profilometer can measure to a depth of over 1 mm, allowing for direct measurement of MEMs type structures. Lateral resolution is tip-shape dependent and vertical resolution is 1A (when using the 6.55 um range). The lateral resolution is limited by the tip shape. A video camera with variable magnification allows for manual placement of the stylus using the manual X, Y, Theta stage. Software analysis can determine roughness, average step height, etc.<br />
<br />
=Detailed Specifications=<br />
<br />
*50 mm maximum sample thickness/8 inch maximum sample diameter<br />
*.03 mg to 15 mg variable tip force<br />
*Height/Depth measurements to 1 mm<br />
*4 A repeatability on 0.1 um step and vertical resolution of 0.1 um<br />
*Standard stylus radius is 12.5 um, optional 2 um stylus available<br />
*6 inch stage diameter with manual controls for moving and leveling<br />
*Maximum scan length of 55mm (minimum of 50um)<br />
*Software data leveling and other analysis including stress and roughness<br />
*Full GUI-based Windows control and data storage and exporting capability<br />
<br />
=Tool References=<br />
<br />
*[https://wiki.nanotech.ucsb.edu/w/images/6/6c/DektakXT_Operating_Procedure.pdf DektakXT SOP]<br />
*[https://www.youtube.com/watch?v=HINRiQ7XUwE DektakXT Pre-Training Video]</div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:DektakXT_Operating_Procedure.pdf&diff=160909File:DektakXT Operating Procedure.pdf2023-01-31T17:00:19Z<p>Hopkins a: DektakXT SOP</p>
<hr />
<div>== Summary ==<br />
DektakXT SOP</div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Tool_List&diff=160896Tool List2023-01-25T23:36:40Z<p>Hopkins a: /* Topographical Metrology */</p>
<hr />
<div>__NOTOC__<br />
=Lithography=<br />
<br />
{|<br />
|- valign="top"<br />
| width="300" |<br />
=====Photoresists and Lithography Chemicals=====<br />
<br />
*See the [https://wiki.nanotech.ucsb.edu/w/index.php?title=Lithography_Recipes#Chemicals_Stocked_.2B_Datasheets Chemical Datasheets page].<br />
*[[Automated Coat/Develop System (S-Cubed Flexi)|Auto. Coat/Develop (S-Cubed Flexi)]]<br />
<br />
=====Contact Aligners (Optical Exposure)=====<br />
<br />
*[[Suss Aligners (SUSS MJB-3)]]<br />
*[[Contact Aligner (SUSS MA-6)]]<br />
*[[DUV Flood Expose]]<br />
<br />
=====Direct-Write Lithography=====<br />
<br />
*[[E-Beam Lithography System (JEOL JBX-6300FS)]]<br />
*[[Field Emission SEM 1 (FEI Sirion)|E-Beam Lithography (FEI Sirion Nabity v9)]]<br />
*[[Focused Ion-Beam Lithography (Raith Velion)]]<br />
*[[Maskless Aligner (Heidelberg MLA150)]]<br />
<br />
=====Other Patterning Systems=====<br />
<br />
*[[Holographic Lith/PL Setup (Custom)|Holographic Litho/PL Setup (Custom)]]<br />
| width="400" |<br />
=====Steppers (Optical Exposure)=====<br />
<br />
*[[Stepper 1 (GCA 6300)|Stepper 1 (GCA 6300, i-line)]]<br />
*[[Stepper 2 (AutoStep 200)|Stepper 2 (AutoStep 200, i-line)]]<br />
*[[Stepper 3 (ASML DUV)|Stepper 3 (ASML DUV, Deep-UV)]]<br />
<br />
=====Thermal Processing for Photolithography=====<br />
<br />
*[[Ovens - Overview of All Lab Ovens|Ovens - Overview of all lab ovens]]<br />
*[[Ovens 1, 2 & 3 (Labline)]]<br />
*[[Oven 4 (Fisher)]]<br />
*[[Oven 5 (Labline)]]<br />
*[[High Temp Oven (Blue M)]]<br />
<br />
=====Lithography Support=====<br />
<br />
*The [https://wiki.nanotech.ucsb.edu/w/index.php?title=Wet_Benches#Spin_Coat_Benches Spinner Benches] have pre-set hotplates at various temperatures appropriate for common photoresist bakes.<br />
*[https://signupmonkey.ece.ucsb.edu/w/index.php?title=Wet_Benches#Automated_Wet-processing_Spinners_.28POLOS.29 POLOS spinners] on Develop and Solvent benches<br />
*[[Spin Rinse Dryer (SemiTool)|Spin/Rinse/Dryer]]<br />
|-<br />
|}<br />
<br />
=Vacuum Deposition=<br />
<br />
{|<br />
|- valign="top"<br />
| width="300" |<br />
====Physical Vapor Deposition (PVD)====<br />
<br />
=====Thermal Evaporation=====<br />
<br />
*[[E-Beam 1 (Sharon)]]<br />
*[[E-Beam 2 (Custom)]]<br />
*[[E-Beam 3 (Temescal)]]<br />
*[[E-Beam 4 (CHA)]]<br />
*[[E-Beam 5 (Plasys)]]<br />
*[[Thermal Evap 1]]<br />
*[[Thermal Evap 2 (Solder)]]<br />
<br />
=====Sputter Deposition=====<br />
<br />
*[[Sputter 3 (AJA ATC 2000-F)]]<br />
*[[Sputter 4 (AJA ATC 2200-V)]]<br />
*[[Sputter 5 (AJA ATC 2200-V)]]<br />
*[[Ion Beam Deposition (Veeco NEXUS)]]<br />
*[[SEM Sample Coater (Hummer)]]<br />
<br />
| width="400" |<br />
=====Chemical Vapor Deposition (CVD)=====<br />
<br />
*[[PECVD 1 (PlasmaTherm 790)]]<br />
*[[PECVD 2 (Advanced Vacuum)]]<br />
*[[ICP-PECVD (Unaxis VLR)]]<br />
*[[Molecular Vapor Deposition]]<br />
*[[Atomic Layer Deposision (Oxford FlexAL)|Atomic Layer Deposition (Oxford FlexAL)]]<br />
<br />
|}<br />
<br />
=Dry Etch=<br />
<br />
{|<br />
|- valign="top"<br />
| width="300" |<br />
=====Reactive Ion Etching (RIE)=====<br />
<br />
*[[RIE 2 (MRC)]]<br />
*[[RIE 3 (MRC)]]<br />
*[[RIE 5 (PlasmaTherm)]]<br />
<br />
=====Plasma Etching and Cleaning=====<br />
<br />
*[[Plasma Clean (YES EcoClean)]]<br />
*[[Plasma Activation (EVG 810)]]<br />
*[[Ashers (Technics PEII)]]<br />
<br />
=====Etch Monitoring=====<br />
<br />
*[[Laser Etch Monitoring]] (Endpoint Detection)<br />
*Optical Emission Spectra<br />
*Residual Gas Analyzer (RGA)<br />
| width="400" |<br />
=====ICP-RIE=====<br />
<br />
*[[ICP Etch 1 (Panasonic E626I)]]<br />
*[[ICP Etch 2 (Panasonic E640)]]<br />
*[[ICP-Etch (Unaxis VLR)]]<br />
*[[Oxford ICP Etcher (PlasmaPro 100 Cobra)]]<br />
*[[Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)|Plasma-Therm SLR: Fluorine ICP (PlasmaTherm/SLR Fluorine Etcher)]]<br />
*[[DSEIII (PlasmaTherm/Deep Silicon Etcher)|Plasma-Therm DSE-iii (PlasmaTherm/Deep Silicon Etcher)]]<br />
<br />
=====Ion Milling and Reactive Ion Beam Etching=====<br />
<br />
*[[CAIBE (Oxford Ion Mill)]]<br />
*[[Focused Ion-Beam Lithography (Raith Velion)]]<br />
<br />
=====Other Dry Etching=====<br />
<br />
*[[UV Ozone Reactor]]<br />
*[[XeF2 Etch (Xetch)|XeF<sub>2</sub> Etch (Xetch)]]<br />
*[[Vapor HF Etch]]<br />
<br />
|}<br />
<br />
=Wet Processing=<br />
See the [[Chemical List|Chemical List page]] for stocked chemicals such as Developers, Etchants, Solvents etc.<br />
{|<br />
|- valign="top"<br />
| width="300" |<br />
*[[Wet Benches]]<br />
**[[Solvent Cleaning Benches]]<br />
**[[Spin Coat Benches]]<br />
**[[Develop Benches]]<br />
**[[Toxic Corrosive Benches]]<br />
**[[Wet Benches#Wafer Toxic Corrosive Benches|Wafer Toxic Corrosive Bench]]<br />
**[[HF/TMAH Processing Benches]]<br />
**[[Plating Bench]]<br />
| width="400" |<br />
*[[Gold Plating Bench]]<br />
*[[Critical Point Dryer]]<br />
*[[Spin Rinse Dryer (SemiTool)]]<br />
*[[Chemical-Mechanical Polisher (Logitech)]]<br />
*[[Mechanical Polisher (Allied)]]<br />
*[[Automated Coat/Develop System (S-Cubed Flexi)|Auto. Coat/Develop (S-Cubed Flexi)]]<br />
*[https://signupmonkey.ece.ucsb.edu/w/index.php?title=Wet_Benches#Automated_Wet-processing_Spinners_.28POLOS.29 Auto. Wet-Processing Spinners (POLOS)]<br />
|-<br />
|}<br />
<br />
=Thermal Processing=<br />
{|<br />
|- valign="top"<br />
| width="400" |<br />
*[[Rapid Thermal Processor (AET RX6)|Rapid Thermal Annealer/Processor "RTA" (AET RX6)]]<br />
*[[Rapid Thermal Processor (SSI Solaris 150)]]<br />
*[[Tube Furnace (Tystar 8300)]]<br />
*[[Tube Furnace Wafer Bonding (Thermco)]]<br />
*[[Tube Furnace AlGaAs Oxidation (Lindberg)]]<br />
*[[Wafer Bonder (SUSS SB6-8E)]]<br />
*[[Wafer Bonder (Logitech WBS7)|Wafer Bonder/Wax Mounting (Logitech WBS2)]]<br />
| width="400" |<br />
*[[Ovens - Overview of All Lab Ovens|Ovens - Overview of all Lab Ovens]]<br />
**[[Ovens 1, 2 & 3 (Labline)]]<br />
**[[Oven 4 (Thermo-Fisher HeraTherm)]]<br />
**[[Oven 5 (Labline)]]<br />
**[[High Temp Oven (Blue M)]]<br />
|-<br />
|}<br />
<br />
=Packaging=<br />
{|<br />
|<br />
====Die Singulation / Down-sizing====<br />
<br />
*[[Dicing Saw (ADT)]]<br />
*[[Wafer Cleaver (PELCO Flip-Scribe)|Wafer Cleaver (PELCO Flipscribe)]]<br />
<br />
====Other Packaging====<br />
<br />
*[[Vacuum Sealer]]<br />
|<br />
====Wafer/Die Bonding====<br />
<br />
*[[Flip-Chip Bonder (Finetech)]]<br />
<br />
*[[Wafer Bonder (SUSS SB6-8E)]]<br />
*[[Wafer Bonder (Logitech WBS7)|Wafer Bonder/Wax Mounting (Logitech WBS2)]]<br />
|}<br />
<br />
=Inspection, Test and Characterization=<br />
{|<br />
|- valign="top"<br />
| width="300" |<br />
=====Optical Microscopy=====<br />
<br />
*[[Microscopes|Optical Microscopes]] - ''General Use''<br />
*[[Fluorescence Microscope (Olympus MX51)]]<br />
*[[Deep UV Optical Microscope (Olympus)]]<br />
*[[Laser Scanning Confocal M-scope (Olympus LEXT)]]<br />
*[[Digital Microscope (Olympus DSX1000)|Digital Microscope #7 (Olympus DSX1000)]]<br />
<br />
=====Electron Microscopy=====<br />
<br />
*[[Field Emission SEM 1 (FEI Sirion)]]<br />
*[[Field Emission SEM 2 (JEOL 7600F)]]<br />
*[[SEM Sample Coater (Hummer)]]<br />
<br />
=====Topographical Metrology=====<br />
<br />
*[[Step Profilometer (KLA Tencor P-7)]]<br />
*[[Step Profilometer (DektakXT)]]<br />
*[[Atomic Force Microscope (Bruker ICON)|Atomic Force Microsope (Bruker ICON)]]<br />
*[[Laser Scanning Confocal M-scope (Olympus LEXT)]]<br />
| width="400" |<br />
<br />
=====Thin-Film/Material Analysis=====<br />
<br />
======Thickness + Optical Constants======<br />
<br />
*[[Ellipsometer (Woollam)]]<br />
*[[Filmetrics F40-UV Microscope-Mounted|Optical Film Thickness (Microscope-Mounted Filmetrics F-40-UV)]]<br />
*[[Optical Film Thickness & Wafer-Mapping (Filmetrics F50)]]<br />
*[[Optical Film Spectra + Optical Properties (Filmetrics F10-RT-UVX)|Reflection/Transmission Spectra & Optical Film Thickness (Filmetrics F10-RT-UVX)]]<br />
<br />
======Electrical Analysis======<br />
<br />
*[[Resistivity Mapper (CDE RESMAP)]]<br />
*[[Probe Station & Curve Tracer|Probe Station & Source/Meter Units]]<br />
*[[Photo-emission & IR Microscope (QFI)|Photo-emission & Thermal IR Microscope (QFI)]]<br />
<br />
======Other Properties======<br />
<br />
*[[Film Stress (Tencor Flexus)]]<br />
*[[Surface Analysis (KLA/Tencor Surfscan)|Particle Counts (KLA/Tencor Surfscan)]]<br />
*[[Photoluminescence PL Setup (Custom)]]<br />
*[[Goniometer (Rame-Hart A-100)|Goniometer (Ramé-Hart A-100)]]<br />
**''Surface hydrophobicity''<br />
|-<br />
|}</div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Step_Profilometer_(Dektak_6M)&diff=160895Step Profilometer (Dektak 6M)2023-01-25T23:34:43Z<p>Hopkins a: Hopkins a moved page Step Profilometer (Dektak 6M) to Step Profilometer (DektakXT)</p>
<hr />
<div>#REDIRECT [[Step Profilometer (DektakXT)]]</div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Step_Profilometer_(DektakXT)&diff=160894Step Profilometer (DektakXT)2023-01-25T23:34:43Z<p>Hopkins a: Hopkins a moved page Step Profilometer (Dektak 6M) to Step Profilometer (DektakXT)</p>
<hr />
<div> '''The Dektak 6M has been removed from the lab, and a new Dektak XT is currently being qualified. 2023-01-20'''<br />
{{tool2|{{PAGENAME}}<br />
|picture=Dektak6M.jpg<br />
|type = Inspection, Test and Characterization<br />
|super= Aidan Hopkins<br />
|super2= Bill Millerski<br />
|phone=(805)839-3918x219<br />
|location=Bay 3<br />
|email=silva@ece.ucsb.edu<br />
|description = Surface Profilometer<br />
|manufacturer = Bruker<br />
|materials = <br />
}} <br />
=About=<br />
The DektakXT is a profilometer for measuring step heights or trench depths on a surface. This is a surface contact measurement technique where a very low force stylus is dragged across a surface. The DektakXT offers Windows based data acquisition, data analysis, and equipment control. The force of the tip on the surface is adjustable from .03 mg to 15 mg, allowing for the measuring of hard and soft surfaces. A stress measurement option is also included with this tool. The profilometer can measure to a depth of over 1 mm, allowing for direct measurement of MEMs type structures. Lateral resolution is tip-shape dependent and vertical resolution is 1A (when using the 6.55 um range). The lateral resolution is limited by the tip shape. A video camera with variable magnification allows for manual placement of the stylus using the manual X, Y, Theta stage. Software analysis can determine roughness, average step height, etc.<br />
<br />
=Detailed Specifications=<br />
<br />
*50 mm maximum sample thickness/8 inch maximum sample diameter<br />
*.03 mg to 15 mg variable tip force<br />
*Height/Depth measurements to 1 mm<br />
*4 A repeatability on 0.1 um step and vertical resolution of 0.1 um<br />
*Standard stylus radius is 12.5 um, optional 2 um stylus available<br />
*6 inch stage diameter with manual controls for moving and leveling<br />
*Maximum scan length of 55mm (minimum of 50um)<br />
*Software data leveling and other analysis including stress and roughness<br />
*Full GUI-based Windows control and data storage and exporting capability<br />
<br />
=Tool References=<br />
<br />
*DektakXT SOP<br />
*[https://www.youtube.com/watch?v=HINRiQ7XUwE DektakXT Pre-Training Video]</div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Step_Profilometer_(DektakXT)&diff=160893Step Profilometer (DektakXT)2023-01-25T23:33:57Z<p>Hopkins a: </p>
<hr />
<div> '''The Dektak 6M has been removed from the lab, and a new Dektak XT is currently being qualified. 2023-01-20'''<br />
{{tool2|{{PAGENAME}}<br />
|picture=Dektak6M.jpg<br />
|type = Inspection, Test and Characterization<br />
|super= Aidan Hopkins<br />
|super2= Bill Millerski<br />
|phone=(805)839-3918x219<br />
|location=Bay 3<br />
|email=silva@ece.ucsb.edu<br />
|description = Surface Profilometer<br />
|manufacturer = Bruker<br />
|materials = <br />
}} <br />
=About=<br />
The DektakXT is a profilometer for measuring step heights or trench depths on a surface. This is a surface contact measurement technique where a very low force stylus is dragged across a surface. The DektakXT offers Windows based data acquisition, data analysis, and equipment control. The force of the tip on the surface is adjustable from .03 mg to 15 mg, allowing for the measuring of hard and soft surfaces. A stress measurement option is also included with this tool. The profilometer can measure to a depth of over 1 mm, allowing for direct measurement of MEMs type structures. Lateral resolution is tip-shape dependent and vertical resolution is 1A (when using the 6.55 um range). The lateral resolution is limited by the tip shape. A video camera with variable magnification allows for manual placement of the stylus using the manual X, Y, Theta stage. Software analysis can determine roughness, average step height, etc.<br />
<br />
=Detailed Specifications=<br />
<br />
*50 mm maximum sample thickness/8 inch maximum sample diameter<br />
*.03 mg to 15 mg variable tip force<br />
*Height/Depth measurements to 1 mm<br />
*4 A repeatability on 0.1 um step and vertical resolution of 0.1 um<br />
*Standard stylus radius is 12.5 um, optional 2 um stylus available<br />
*6 inch stage diameter with manual controls for moving and leveling<br />
*Maximum scan length of 55mm (minimum of 50um)<br />
*Software data leveling and other analysis including stress and roughness<br />
*Full GUI-based Windows control and data storage and exporting capability<br />
<br />
=Tool References=<br />
<br />
*DektakXT SOP<br />
*[https://www.youtube.com/watch?v=HINRiQ7XUwE DektakXT Pre-Training Video]</div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Step_Profilometer_(DektakXT)&diff=160892Step Profilometer (DektakXT)2023-01-25T23:31:54Z<p>Hopkins a: </p>
<hr />
<div> '''The Dektak 6M has been removed from the lab, and a new Dektak XT is currently being qualified. 2023-01-20'''<br />
{{tool2|{{PAGENAME}}<br />
|picture=Dektak6M.jpg<br />
|type = Inspection, Test and Characterization<br />
|super= Aidan Hopkins<br />
|super2= Bill Millerski<br />
|phone=(805)839-3918x219<br />
|location=Bay 3<br />
|email=silva@ece.ucsb.edu<br />
|description = Surface Profilometer<br />
|manufacturer = Bruker<br />
|materials = <br />
}} <br />
=About=<br />
The DektakXT is a profilometer for measuring step heights or trench depths on a surface. This is a surface contact measurement technique where a very low force stylus is dragged across a surface. The DektakXT offers Windows based data acquisition, data analysis, and equipment control. The force of the tip on the surface is adjustable from .03 mg to 15 mg, allowing for the measuring of hard and soft surfaces. A stress measurement option is also included with this tool. The profilometer can measure to a depth of over 1 mm, allowing for direct measurement of MEMs type structures. Lateral resolution is tip-shape dependent and vertical resolution is 1A (when using the 6.55 um range). The lateral resolution is limited by the tip shape. A video camera with variable magnification allows for manual placement of the stylus using the manual X, Y, Theta stage. Software analysis can determine roughness, average step height, etc.<br />
<br />
=Detailed Specifications=<br />
<br />
*50 mm maximum sample thickness/8 inch maximum sample diameter<br />
*.03 mg to 15 mg variable tip force<br />
*Height/Depth measurements to 1 mm<br />
*4 A repeatability on 0.1 um step and vertical resolution of 0.1 um<br />
*Standard stylus radius is 12.5 um, optional 2 um stylus available<br />
*6 inch stage diameter with manual controls for moving and leveling<br />
*Maximum scan length of 55mm (minimum of 50um)<br />
*Software data leveling and other analysis including stress and roughness<br />
*Full GUI-based Windows control and data storage and exporting capability<br />
<br />
=Tool References=<br />
<br />
*DektakXT SOP<br />
*DektakXT Pre-Training Video</div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Step_Profilometer_(DektakXT)&diff=160891Step Profilometer (DektakXT)2023-01-25T23:26:05Z<p>Hopkins a: </p>
<hr />
<div> '''The Dektak 6M has been removed from the lab, and a new Dektak XT is currently being qualified. 2023-01-20'''<br />
{{tool2|{{PAGENAME}}<br />
|picture=Dektak6M.jpg<br />
|type = Inspection, Test and Characterization<br />
|super= Aidan Hopkins<br />
|super2= Bill Millerski<br />
|phone=(805)839-3918x219<br />
|location=Bay 3<br />
|email=silva@ece.ucsb.edu<br />
|description = Surface Profilometer<br />
|manufacturer = Bruker<br />
|materials = <br />
}} <br />
=About=<br />
The DektakXT is a profilometer for measuring step heights or trench depths on a surface. This is a surface contact measurement technique where a very low force stylus is dragged across a surface. The DektakXT offers Windows based data acquisition, data analysis, and equipment control. The force of the tip on the surface is adjustable from .03 mg to 15 mg, allowing for the measuring of hard and soft surfaces. A stress measurement option is also included with this tool. The profilometer can measure to a depth of over 1 mm, allowing for direct measurement of MEMs type structures. Lateral resolution is tip-shape dependent and vertical resolution is 1A (when using the 6.55 um range). The lateral resolution is limited by the tip shape. A video camera with variable magnification allows for manual placement of the stylus using the manual X, Y, Theta stage. Software analysis can determine roughness, average step height, etc.<br />
<br />
=Detailed Specifications=<br />
<br />
*50 mm maximum sample thickness/8 inch maximum sample diameter<br />
*.03 mg to 15 mg variable tip force<br />
*Height/Depth measurements to 1 mm<br />
*4 A repeatability on 0.1 um step and vertical resolution of 0.1 um<br />
*Standard stylus radius is 12.5 um, optional 2 um stylus available<br />
*6 inch stage diameter with manual controls for moving and leveling<br />
*Maximum scan length of 55mm (minimum of 50um)<br />
*Software data leveling and other analysis including stress and roughness<br />
*Full GUI-based Windows control and data storage and exporting capability</div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Template:Announcements&diff=160655Template:Announcements2022-11-08T16:12:33Z<p>Hopkins a: </p>
<hr />
<div><startfeed /><br />
<!--feedBurner name="UCSBNanofab-Announcements" /--><br />
<!-- Description of the RSS feed --><br />
'''''Important Announcements'''''<br />
----<br />
<!--<br />
SEE THE BOTTOM OF THIS PAGE FOR DETAILED INSTRUCTIONS ON ADDING NEWS ITEMS.<br />
<br />
In order for your post to show up correctly, you need to:<br />
>> Use FIVE equal-signs for the Title's heading level. eg.: ===== my post =====<br />
>> Use two slashes // and FOUR tilde's to insert your signature at the end of your post: //~~~~<br />
--><br />
<!----------------------------------------------><br />
<!------------- Equipment Status ----------------><br />
<br />
===== JEOL SEM is Down =====<br />
A service engineer will be here starting at noon (11/8) to do preventative maintenance. Service should be completed on Friday (11/11) around 1pm.<br />
//[[User:Hopkins a|Hopkins a]] 08:12, 8 November 2022 (PST)<br />
<br />
===== ASML UP =====<br />
PM complete, system is up.<br />
// [[User:John d|John d]] 13:25, 4 November 2022 (PDT)<br />
<br />
===== Au Plating: DOWN =====<br />
Bath damaged, system is down for repair. <br />
// [[User:John d|John d]] 08:48, 27 October 2022 (PDT)<br />
<br />
===== E-Beam#2: Heater Down =====<br />
EB2 Heated Processing is down<br />
// [[User:John d|John d]] 15:40, 21 September 2022 (PDT)<br />
<br />
===== MLA 150 Software Revision =====<br />
The MLA has new software - make sure to see the updated operating procedures. <br />
In addition, any users running the “small” substrate templates (<12mm samples) must be absolutely sure that “Pneumatic Autofocus” is disabled or risk crashing the optics - please see email and note at the tool for details. <br />
// [[User:John d|John d]] 16:27, 17 October 2022 (PDT)<br />
<br />
===== ASML Up; Network status =====<br />
<br />
Nanofiles sync & JobCreator functionality is in the process of being restored.<br />
Batch_Report syncing is not yet working. JobCreator is working with staff intervention, as local scripts are still being written + tested.<br />
<br />
// [[User:John d|John d]] 15:44, 29 September 2022 (PDT)<br />
<br />
===== NanoFab Job Openings =====<br />
The NanoFab has current job openings, apply at: [https://wiki.nanotech.ucsb.edu/wiki/Nanofab_Job_Postings '''NanoFab Job Postings''']<br />
<br />
// [[User:John d|John d]] 23:55, 4 October 2022 (PDT)<br />
<br />
<!---------- end of Equipment Status ------------><br />
<!----------------------------------------------><br />
<endfeed /><br />
<noinclude>[[Category:Templates]]</noinclude><br />
<!--------------------------------------------<br />
<br />
<br />
<br />
<br />
====== HOW TO ADD ITEMS ======<br />
<br />
* You can copy/paste the example below for a new news item.<br />
* Use level 5 heading for each item (5 equal signs surrounding the title) - they will show up as separate RSS items this way. (This looks best on the Wiki homepage)<br />
* You must add a user signature at the end of each post via four tildes: ~~~~. Required for the RSS plugin to determine the timestamp, or else post goes to the end of the RSS feed. <br />
* Use double-slash: // at start of new lines - makes display on the Samsung Display look a lot better, since it strips newlines.<br />
* Optional: After saving the page, delete the name after the two dashes "--" and delete the "[[(talk)...]]" link. <br />
* Please use "There are no announcements at this time." if the announcements are empty.<br />
<br />
* URL to the RSS feed via FeedBurner (for Samsung display): http://wiki.nanotech.ucsb.edu/w/index.php?title=Template:Announcements&action=feed&feed=rss<br />
* URL to the RSS feed directly from Wiki: https://wiki.nanotech.ucsb.edu/w/index.php?title=Template:Announcements&action=feed&feed=rss<br />
<br />
<br />
******** EXAMPLE OF A NEW POST ********<br />
<br />
===== NanoFab making LN2 icecream =====<br />
Tomorrow the NanoFab will be serving liquid nitrogen ice cream.<br />
// ~~~~<br />
<br />
************* (end of example) **************<br />
The ~~~~ will be replaced with your username & timestamp after you submit the post.<br />
----------------------------------------------></div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Aidan_Hopkins&diff=160136Aidan Hopkins2022-07-15T15:10:07Z<p>Hopkins a: /* Tools */</p>
<hr />
<div>{{staff|{{PAGENAME}}<br />
|position = Facility Staff Manager<br />
|room = 1109B<br />
|phone = (805) 893-2343<br />
|cell = (805) 450-2890<br />
|email = hopkins@ece.ucsb.edu<br />
}}<br />
<br />
=About=<br />
Aidan moved to Santa Barbara in 2000 to attend college at UCSB. During his junior year Aidan was hired part time to help out with the Engineering II cleanroom. Over the next year and half Aidan helped with the transition of moving the cleanroom to the Engineering Science Building. Once he graduated in 2005, Aidan was hired on full time as an Assistant Development Engineer. Aidan gained valuable experience supporting the lab on both the equipment and facility side and in 2012 he became a Senior Development Engineer. In 2017 Aidan became the Facility Staff Manager.<br />
<br />
=Current Work=<br />
Aidan is the Facility Staff Manager of the Nanofab. Contact Aidan with any facility related issues.<br />
<br />
=Tools=<br />
Aidan Hopkins is in charge of the following tools: <br />
{|<br />
|- valign="top"<br />
| width="300" |<br />
*[[RIE 5 (PlasmaTherm)|RIE #5 (Plasma Therm SLR)]]<br />
*[[Wafer Bonder (Suss SB6-8E)]]<br />
*[[Field Emission SEM 2 (JEOL)]]<br />
*[[Field Emission SEM 1 (FEI Sirion)]]<br />
*[[Plasma Clean (Gasonics 2000)]]<br />
*[[DSE (Plasma Therm)]]<br />
||<br />
*Wet Benches<br />
**[[Wafer Toxic Corrosive]]<br />
<br />
|}</div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Aidan_Hopkins&diff=160135Aidan Hopkins2022-07-15T15:07:46Z<p>Hopkins a: /* Tools */</p>
<hr />
<div>{{staff|{{PAGENAME}}<br />
|position = Facility Staff Manager<br />
|room = 1109B<br />
|phone = (805) 893-2343<br />
|cell = (805) 450-2890<br />
|email = hopkins@ece.ucsb.edu<br />
}}<br />
<br />
=About=<br />
Aidan moved to Santa Barbara in 2000 to attend college at UCSB. During his junior year Aidan was hired part time to help out with the Engineering II cleanroom. Over the next year and half Aidan helped with the transition of moving the cleanroom to the Engineering Science Building. Once he graduated in 2005, Aidan was hired on full time as an Assistant Development Engineer. Aidan gained valuable experience supporting the lab on both the equipment and facility side and in 2012 he became a Senior Development Engineer. In 2017 Aidan became the Facility Staff Manager.<br />
<br />
=Current Work=<br />
Aidan is the Facility Staff Manager of the Nanofab. Contact Aidan with any facility related issues.<br />
<br />
=Tools=<br />
Aidan Hopkins is in charge of the following tools: <br />
{|<br />
|- valign="top"<br />
| width="300" |<br />
*[[RIE #5 (Plasma Therm SLR)]]<br />
*[[Wafer Bonder (Suss SB6-8E)]]<br />
*[[Field Emission SEM 2 (JEOL)]]<br />
*[[Field Emission SEM 1 (FEI Sirion)]]<br />
*[[Plasma Clean (Gasonics 2000)]]<br />
*[[DSE (Plasma Therm)]]<br />
||<br />
*Wet Benches<br />
**[[Wafer Toxic Corrosive]]<br />
<br />
|}</div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Template:Announcements&diff=160134Template:Announcements2022-07-15T15:00:42Z<p>Hopkins a: </p>
<hr />
<div><startfeed /><br />
<!--feedBurner name="UCSBNanofab-Announcements" /--><br />
<!-- Description of the RSS feed --><br />
'''''Important Announcements'''''<br />
----<br />
<!--<br />
SEE THE BOTTOM OF THIS PAGE FOR DETAILED INSTRUCTIONS ON ADDING NEWS ITEMS.<br />
<br />
In order for your post to show up correctly, you need to:<br />
>> Use FIVE equal-signs for the Title's heading level. eg.: ===== my post =====<br />
>> Use two slashes // and FOUR tilde's to insert your signature at the end of your post: //~~~~<br />
--><br />
<!----------------------------------------------><br />
<!------------- Equipment Status ----------------><br />
<br />
===== ASML Up =====<br />
<br />
System is ready to use. <br />
<br />
We are running a newer computer; all jobs have been copied over, software options restored, and all old Jobs can be run/edited without issue.<br />
<br />
Nanofiles sync & JobCreator functionality will be restored in the next 2 weeks.<br />
<br />
// [[User:John d|John d]] 10:18, 5 July 2022 (PDT)<br />
<br />
===== Face-Masks Optional as of June 13 =====<br />
You are not required to wear a mask in UC buildings at this time. You are also not required to wear a mask in the Nanofab if desired. <br />
<br />
We will still provide masks at the metal table in front of the cleanroom entry.<br />
See the [https://t.e2ma.net/webview/be2nag/25634e9f535619ce1f4eb976598e7268 UCSB announcement at this link].<br />
<br />
See the full policies at '''[[COVID-19_User_Policies]]'''<br />
// [[User:John d|John d]] 11:20, 13 June 2022 (PDT)<br />
<br />
===== New EBL Rates =====<br />
Effective Dec.1, 2021, all of our electron beam lithography rates are lowered. The new rates are as follows:<br />
<br />
Industrial Users: $405/hour<br />
<br />
UC Academic Users: $126/hour<br />
<br />
Non-UC Academic Users: $150/hour<br />
<br />
UCSB CNSI Incubator USers: $260/hour<br />
<br />
//[[User:Thibeault|Thibeault]] 12:21, 9 December 2021 (PST)<br />
<br />
<!---------- end of Equipment Status ------------><br />
<!----------------------------------------------><br />
<endfeed /><br />
<noinclude>[[Category:Templates]]</noinclude><br />
<!--------------------------------------------<br />
<br />
<br />
<br />
<br />
====== HOW TO ADD NEWS ITEMS ======<br />
<br />
* You can copy/paste the example below for a new news item.<br />
* Use level 5 heading for each item (5 equal signs surrounding the title) - they will show up as separate RSS items this way. (This looks best on the Wiki homepage)<br />
* You must add a user signature at the end of each post via four tildes: ~~~~. Required for the RSS plugin to determine the timestamp, or else post goes to the end of the RSS feed. <br />
* Use double-slash: // at start of new lines - makes display on the Samsung Display look a lot better, since it strips newlines.<br />
* Optional: After saving the page, delete the name after the two dashes "--" and delete the "[[(talk)...]]" link. <br />
* Please use "There are no announcements at this time." if the announcements are empty.<br />
<br />
* URL to the RSS feed via FeedBurner (for Samsung display): http://wiki.nanotech.ucsb.edu/w/index.php?title=Template:Announcements&action=feed&feed=rss<br />
* URL to the RSS feed directly from Wiki: https://wiki.nanotech.ucsb.edu/w/index.php?title=Template:Announcements&action=feed&feed=rss<br />
<br />
<br />
******** EXAMPLE OF A NEW POST ********<br />
<br />
===== NanoFab making LN2 icecream =====<br />
Tomorrow the NanoFab will be serving liquid nitrogen ice cream.<br />
// ~~~~<br />
<br />
************* (end of example) **************<br />
The ~~~~ will be replaced with your username & timestamp after you submit the post.<br />
----------------------------------------------></div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Template:Announcements&diff=159422Template:Announcements2021-11-05T20:00:03Z<p>Hopkins a: </p>
<hr />
<div><startfeed /><br />
<!--feedBurner name="UCSBNanofab-Announcements" /--><br />
<!-- Description of the RSS feed --><br />
'''''Important Announcements'''''<br />
----<br />
<!--<br />
SEE THE BOTTOM OF THIS PAGE FOR DETAILED INSTRUCTIONS ON ADDING NEWS ITEMS.<br />
<br />
In order for your post to show up correctly, you need to:<br />
>> Use FIVE equal-signs for the Title's heading level. eg.: ===== my post =====<br />
>> Use two slashes // and FOUR tilde's to insert your signature at the end of your post: //~~~~<br />
--><br />
<!----------------------------------------------><br />
<!------------- Equipment Status ----------------><br />
<br />
===== Oxford ICP Installed =====<br />
A new ICP etcher for III-V etches (GaAs, InP, GaN) has been installed: [[Oxford_ICP_Etcher_(PlasmaPro_100_Cobra)]]<br />
<br />
Contact [[Tony_Bosch | the supervisor]] for training.<br />
// [[User:John d|John d]] 08:00, 30 September 2021 (PDT)<br />
<br />
===== New UC system-wide Flu Vaccine mandate =====<br />
The UC Office of the President has issued an executive order making influenza vaccinations mandatory for all UC students and employees. The order, effective throughout the 2021-22 flu season, requires that all students and faculty and staff members who live, learn or work on any UC campus or want to access any UC facilities attest that they have received a flu vaccination, or have chosen to decline a vaccination, no later than November 19. Declining the vaccination will require use of masks indoors throughout the flu season.<br />
<br />
All facility users are covered under this mandate.<br />
//[[User:Thibeault|Thibeault]] 11:26, 27 October 2021 (PDT)<br />
<br />
===== Holiday Shutdown =====<br />
The Nanofab will be closed from Friday, December 24th at 6pm until Monday, January 3rd at 6a. We will be performing our yearly preventative maintenance. Users will not be allowed in the lab during this time.<br />
//[[User:Hopkins a|Hopkins a]] 13:00, 5 November 2021 (PDT)<br />
<br />
===== New COVID Protocols =====<br />
All facility users and visitors are now required to have masks on while indoors in shared spaces. This includes shared offices, hallways/corridors, and all shared laboratory spaces. Masks will be worn in all laboratories at all times and in all shared office spaces at all times.<br />
<br />
This direction applies to all vaccinated and non-vaccinated persons.<br />
<br />
Outdoor policies remain unchanged<br />
<br />
Surgical style masks or KN95 masks are appropriate for cleanroom use. Cloth masks may be used in non-cleanroom spaces.<br />
<br />
See the full policies at [[COVID-19_User_Policies]]<br />
<br />
// [[User:Hopkins a|Hopkins a]] 08:14, 6 August 2021 (PDT)<br />
<br />
===== Weekly Testing strongly urged for UCSB Students/Staff =====<br />
Free weekly COVID testing is available to UCSB Staff, Faculty and Students. UCSB employees are strongly urged to sign up for weekly testing, which takes only minutes, is administered on-campus and is free of charge.<br />
<br />
Weekly recurring appointments can be made at the Student Health website:<br />
* Log on to the [https://studenthealthoc.sa.ucsb.edu/login_dualauthentication.aspx '''UCSB Testing Patient Portal'''] using your UCSB NetID and password. <br />
<br />
The Chancellor's [https://chancellor.ucsb.edu/memos/2020-10-15-recommended-covid-19-asymptomatic-campus-testing-program-faculty-staff-and memo to campus with details can be found here].<br />
// [[User:John d|John d]] 06:20, 16 November 2020 (PST) <br />
<br />
===== NanoFab COVID Protocols =====<br />
<br />
''The most recent COVID Protocols can be found at '''[[COVID-19_User_Policies]]'''.''<br />
<br />
// [[User:John d|John d]] 15:00, 19 July 2020 (PDT)<br />
<br />
<br />
<!---------- end of Equipment Status ------------><br />
<!----------------------------------------------><br />
<endfeed /><br />
<noinclude>[[Category:Templates]]</noinclude><br />
<!--------------------------------------------<br />
<br />
<br />
<br />
<br />
====== HOW TO ADD NEWS ITEMS ======<br />
<br />
* You can copy/paste the example below for a new news item.<br />
* Use level 5 heading for each item (5 equal signs surrounding the title) - they will show up as separate RSS items this way. (This looks best on the Wiki homepage)<br />
* You must add a user signature at the end of each post via four tildes: ~~~~. Required for the RSS plugin to determine the timestamp, or else post goes to the end of the RSS feed. <br />
* Use double-slash: // at start of new lines - makes display on the Samsung Display look a lot better, since it strips newlines.<br />
* Optional: After saving the page, delete the name after the two dashes "--" and delete the "[[(talk)...]]" link. <br />
* Please use "There are no announcements at this time." if the announcements are empty.<br />
<br />
* URL to the RSS feed via FeedBurner (for Samsung display): http://feeds.feedburner.com/UCSBNanofab-Announcements?format=xml<br />
* URL to the RSS feed directly from Wiki: https://www.nanotech.ucsb.edu/wiki/index.php?title=Template:Announcements&action=feed&feed=rss<br />
<br />
<br />
******** EXAMPLE OF A NEW POST ********<br />
<br />
===== NanoFab making LN2 icecream =====<br />
Tomorrow the NanoFab will be serving liquid nitrogen ice cream.<br />
// ~~~~<br />
<br />
************* (end of example) **************<br />
The ~~~~ will be replaced with your username & timestamp after you submit the post.<br />
----------------------------------------------></div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Template:Announcements&diff=159067Template:Announcements2021-08-19T23:52:08Z<p>Hopkins a: </p>
<hr />
<div><startfeed /><br />
<!--feedBurner name="UCSBNanofab-Announcements" /--><br />
<!-- Description of the RSS feed --><br />
'''''Equipment Status'''''<br />
----<br />
<!--<br />
SEE THE BOTTOM OF THIS PAGE FOR DETAILED INSTRUCTIONS ON ADDING NEWS ITEMS.<br />
<br />
Please use FIVE equal-signs for the Title's heading level. eg.: ===== my post =====<br />
Use FOUR tilde's to insert your signature at the end of your post: ~~~~<br />
--><br />
<!----------------------------------------------><br />
<!------------- Equipment Status ----------------><br />
<br />
===== Building Controls Update next Friday (8/27) =====<br />
Campus facilities will be doing a firmware update on the building controls at 7am. No disruption in operation is expected but there is a slight chance of a small change in cleanroom temperature and/or pressure. Please plan accordingly.<br />
[[User:Hopkins a|Hopkins a]] 16:52, 19 August 2021 (PDT)<br />
<br />
===== New COVID Protocols =====<br />
All facility users and visitors are now required to have masks on while indoors in shared spaces. This includes shared offices, hallways/corridors, and all shared laboratory spaces. Masks will be worn in all laboratories at all times and in all shared office spaces at all times.<br />
<br />
This direction applies to all vaccinated and non-vaccinated persons.<br />
<br />
Outdoor policies remain unchanged<br />
<br />
Surgical style masks or KN95 masks are appropriate for cleanroom use. Cloth masks may be used in non-cleanroom spaces.<br />
[[User:Hopkins a|Hopkins a]] 08:14, 6 August 2021 (PDT)<br />
<br />
===== Weekly Testing strongly urged for UCSB Students/Staff =====<br />
Free weekly COVID testing is available to UCSB Staff, Faculty and Students. UCSB employees are strongly urged to sign up for weekly testing, which takes only minutes, is administered on-campus and is free of charge.<br />
<br />
Weekly recurring appointments can be made at the Student Health website:<br />
* Log on to the [https://studenthealthoc.sa.ucsb.edu/login_dualauthentication.aspx '''UCSB Testing Patient Portal'''] using your UCSB NetID and password. <br />
<br />
The Chancellor's [https://chancellor.ucsb.edu/memos/2020-10-15-recommended-covid-19-asymptomatic-campus-testing-program-faculty-staff-and memo to campus with details can be found here].<br />
// [[User:John d|John d]] 06:20, 16 November 2020 (PST) <br />
<br />
===== NanoFab COVID Protocols =====<br />
Following guidelines provided by our Office of Research, the UCSB Nanofabrication Facility is open only for limited/authorized use for critical activity at this time. <br />
<br />
Contact the [[Brian Thibeault|Lab Director]] for more information.<br />
<br />
''The most recent COVID Protocols can be found at '''[[COVID-19_User_Policies]]'''.''<br />
<br />
// [[User:John d|John d]] 15:00, 19 July 2020 (PDT)<br />
<br />
<br />
<!---------- end of Equipment Status ------------><br />
<!----------------------------------------------><br />
<endfeed /><br />
<noinclude>[[Category:Templates]]</noinclude><br />
<!--------------------------------------------<br />
<br />
<br />
<br />
<br />
====== HOW TO ADD NEWS ITEMS ======<br />
<br />
* You can copy/paste the example below for a new news item.<br />
* Use level 5 heading for each item (5 equal signs surrounding the title) - they will show up as separate RSS items this way. (This looks best on the Wiki homepage)<br />
* You must add a user signature at the end of each post via four tildes: ~~~~. Required for the RSS plugin to determine the timestamp, or else post goes to the end of the RSS feed. <br />
* Use double-slash: // at start of new lines - makes display on the Samsung Display look a lot better, since it strips newlines.<br />
* Optional: After saving the page, delete the name after the two dashes "--" and delete the "[[(talk)...]]" link. <br />
* Please use "There are no announcements at this time." if the announcements are empty.<br />
<br />
* URL to the RSS feed via FeedBurner (for Samsung display): http://feeds.feedburner.com/UCSBNanofab-Announcements?format=xml<br />
* URL to the RSS feed directly from Wiki: https://www.nanotech.ucsb.edu/wiki/index.php?title=Template:Announcements&action=feed&feed=rss<br />
<br />
<br />
******** EXAMPLE OF A NEW POST ********<br />
<br />
===== NanoFab making LN2 icecream =====<br />
Tomorrow the NanoFab will be serving liquid nitrogen ice cream.<br />
// ~~~~<br />
<br />
************* (end of example) **************<br />
The ~~~~ will be replaced with your username & timestamp after you submit the post.<br />
----------------------------------------------></div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Template:Announcements&diff=159051Template:Announcements2021-08-06T15:14:56Z<p>Hopkins a: </p>
<hr />
<div><startfeed /><br />
<!--feedBurner name="UCSBNanofab-Announcements" /--><br />
<!-- Description of the RSS feed --><br />
'''''Equipment Status'''''<br />
----<br />
<!--<br />
SEE THE BOTTOM OF THIS PAGE FOR DETAILED INSTRUCTIONS ON ADDING NEWS ITEMS.<br />
<br />
Please use FIVE equal-signs for the Title's heading level. eg.: ===== my post =====<br />
Use FOUR tilde's to insert your signature at the end of your post: ~~~~<br />
--><br />
<!----------------------------------------------><br />
<!------------- Equipment Status ----------------><br />
<br />
===== New COVID Protocols =====<br />
All facility users and visitors are now required to have masks on while indoors in shared spaces. This includes shared offices, hallways/corridors, and all shared laboratory spaces. Masks will be worn in all laboratories at all times and in all shared office spaces at all times.<br />
<br />
This direction applies to all vaccinated and non-vaccinated persons.<br />
<br />
Outdoor policies remain unchanged<br />
<br />
Surgical style masks or KN95 masks are appropriate for cleanroom use. Cloth masks may be used in non-cleanroom spaces.<br />
[[User:Hopkins a|Hopkins a]] 08:14, 6 August 2021 (PDT)<br />
<br />
===== Weekly Testing strongly urged for UCSB Students/Staff =====<br />
Free weekly COVID testing is available to UCSB Staff, Faculty and Students. UCSB employees are strongly urged to sign up for weekly testing, which takes only minutes, is administered on-campus and is free of charge.<br />
<br />
Weekly recurring appointments can be made at the Student Health website:<br />
* Log on to the [https://studenthealthoc.sa.ucsb.edu/login_dualauthentication.aspx '''UCSB Testing Patient Portal'''] using your UCSB NetID and password. <br />
<br />
The Chancellor's [https://chancellor.ucsb.edu/memos/2020-10-15-recommended-covid-19-asymptomatic-campus-testing-program-faculty-staff-and memo to campus with details can be found here].<br />
// [[User:John d|John d]] 06:20, 16 November 2020 (PST) <br />
<br />
===== NanoFab COVID Protocols =====<br />
Following guidelines provided by our Office of Research, the UCSB Nanofabrication Facility is open only for limited/authorized use for critical activity at this time. <br />
<br />
Contact the [[Brian Thibeault|Lab Director]] for more information.<br />
<br />
''The most recent COVID Protocols can be found at '''[[COVID-19_User_Policies]]'''.''<br />
<br />
// [[User:John d|John d]] 15:00, 19 July 2020 (PDT)<br />
<br />
<br />
<!---------- end of Equipment Status ------------><br />
<!----------------------------------------------><br />
<endfeed /><br />
<noinclude>[[Category:Templates]]</noinclude><br />
<!--------------------------------------------<br />
<br />
<br />
<br />
<br />
====== HOW TO ADD NEWS ITEMS ======<br />
<br />
* You can copy/paste the example below for a new news item.<br />
* Use level 5 heading for each item (5 equal signs surrounding the title) - they will show up as separate RSS items this way. (This looks best on the Wiki homepage)<br />
* You must add a user signature at the end of each post via four tildes: ~~~~. Required for the RSS plugin to determine the timestamp, or else post goes to the end of the RSS feed. <br />
* Use double-slash: // at start of new lines - makes display on the Samsung Display look a lot better, since it strips newlines.<br />
* Optional: After saving the page, delete the name after the two dashes "--" and delete the "[[(talk)...]]" link. <br />
* Please use "There are no announcements at this time." if the announcements are empty.<br />
<br />
* URL to the RSS feed via FeedBurner (for Samsung display): http://feeds.feedburner.com/UCSBNanofab-Announcements?format=xml<br />
* URL to the RSS feed directly from Wiki: https://www.nanotech.ucsb.edu/wiki/index.php?title=Template:Announcements&action=feed&feed=rss<br />
<br />
<br />
******** EXAMPLE OF A NEW POST ********<br />
<br />
===== NanoFab making LN2 icecream =====<br />
Tomorrow the NanoFab will be serving liquid nitrogen ice cream.<br />
// ~~~~<br />
<br />
************* (end of example) **************<br />
The ~~~~ will be replaced with your username & timestamp after you submit the post.<br />
----------------------------------------------></div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Template:Announcements&diff=159050Template:Announcements2021-08-06T15:08:57Z<p>Hopkins a: /* SEM#2 is down */</p>
<hr />
<div><startfeed /><br />
<!--feedBurner name="UCSBNanofab-Announcements" /--><br />
<!-- Description of the RSS feed --><br />
'''''Equipment Status'''''<br />
----<br />
<!--<br />
SEE THE BOTTOM OF THIS PAGE FOR DETAILED INSTRUCTIONS ON ADDING NEWS ITEMS.<br />
<br />
Please use FIVE equal-signs for the Title's heading level. eg.: ===== my post =====<br />
Use FOUR tilde's to insert your signature at the end of your post: ~~~~<br />
--><br />
<!----------------------------------------------><br />
<!------------- Equipment Status ----------------><br />
<br />
===== New COVID Protocols =====<br />
ISO Spray is no longer required inside the lab. Masks are required only for unvaccinated individuals.<br />
There are no distancing or occupancy restrictions. <br />
<br />
Read the latest policies on the [https://wiki.nanotech.ucsb.edu/wiki/COVID-19_User_Policies '''COVID-19 User Policies'''] page.<br />
<br />
// [[User:Thibeault|Thibeault]] 14:15, 24 June 2021 (PDT)<br />
<br />
===== Weekly Testing strongly urged for UCSB Students/Staff =====<br />
Free weekly COVID testing is available to UCSB Staff, Faculty and Students. UCSB employees are strongly urged to sign up for weekly testing, which takes only minutes, is administered on-campus and is free of charge.<br />
<br />
Weekly recurring appointments can be made at the Student Health website:<br />
* Log on to the [https://studenthealthoc.sa.ucsb.edu/login_dualauthentication.aspx '''UCSB Testing Patient Portal'''] using your UCSB NetID and password. <br />
<br />
The Chancellor's [https://chancellor.ucsb.edu/memos/2020-10-15-recommended-covid-19-asymptomatic-campus-testing-program-faculty-staff-and memo to campus with details can be found here].<br />
// [[User:John d|John d]] 06:20, 16 November 2020 (PST) <br />
<br />
===== NanoFab COVID Protocols =====<br />
Following guidelines provided by our Office of Research, the UCSB Nanofabrication Facility is open only for limited/authorized use for critical activity at this time. <br />
<br />
Contact the [[Brian Thibeault|Lab Director]] for more information.<br />
<br />
''The most recent COVID Protocols can be found at '''[[COVID-19_User_Policies]]'''.''<br />
<br />
// [[User:John d|John d]] 15:00, 19 July 2020 (PDT)<br />
<br />
<br />
<!---------- end of Equipment Status ------------><br />
<!----------------------------------------------><br />
<endfeed /><br />
<noinclude>[[Category:Templates]]</noinclude><br />
<!--------------------------------------------<br />
<br />
<br />
<br />
<br />
====== HOW TO ADD NEWS ITEMS ======<br />
<br />
* You can copy/paste the example below for a new news item.<br />
* Use level 5 heading for each item (5 equal signs surrounding the title) - they will show up as separate RSS items this way. (This looks best on the Wiki homepage)<br />
* You must add a user signature at the end of each post via four tildes: ~~~~. Required for the RSS plugin to determine the timestamp, or else post goes to the end of the RSS feed. <br />
* Use double-slash: // at start of new lines - makes display on the Samsung Display look a lot better, since it strips newlines.<br />
* Optional: After saving the page, delete the name after the two dashes "--" and delete the "[[(talk)...]]" link. <br />
* Please use "There are no announcements at this time." if the announcements are empty.<br />
<br />
* URL to the RSS feed via FeedBurner (for Samsung display): http://feeds.feedburner.com/UCSBNanofab-Announcements?format=xml<br />
* URL to the RSS feed directly from Wiki: https://www.nanotech.ucsb.edu/wiki/index.php?title=Template:Announcements&action=feed&feed=rss<br />
<br />
<br />
******** EXAMPLE OF A NEW POST ********<br />
<br />
===== NanoFab making LN2 icecream =====<br />
Tomorrow the NanoFab will be serving liquid nitrogen ice cream.<br />
// ~~~~<br />
<br />
************* (end of example) **************<br />
The ~~~~ will be replaced with your username & timestamp after you submit the post.<br />
----------------------------------------------></div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Aidan_Hopkins&diff=159018Aidan Hopkins2021-07-13T15:33:44Z<p>Hopkins a: </p>
<hr />
<div>{{staff|{{PAGENAME}}<br />
|position = Facility Staff Manager<br />
|room = 1109B<br />
|phone = (805) 893-2343<br />
|cell = (805) 450-2890<br />
|email = hopkins@ece.ucsb.edu<br />
}}<br />
<br />
=About=<br />
Aidan moved to Santa Barbara in 2000 to attend college at UCSB. During his junior year Aidan was hired part time to help out with the Engineering II cleanroom. Over the next year and half Aidan helped with the transition of moving the cleanroom to the Engineering Science Building. Once he graduated in 2005, Aidan was hired on full time as an Assistant Development Engineer. Aidan gained valuable experience supporting the lab on both the equipment and facility side and in 2012 he became a Senior Development Engineer. In 2017 Aidan became the Facility Staff Manager.<br />
<br />
=Current Work=<br />
Aidan is the Facility Staff Manager of the Nanofab. Contact Aidan with any facility related issues.<br />
<br />
=Tools=<br />
Aidan Hopkins is in charge of the following tools: <br />
{|<br />
|- valign="top"<br />
| width="300" |<br />
*[[Vacuum Sealer]]<br />
*[[Dicing Saw (ADT)]]<br />
*[[Wire Saw (Takatori)]]<br />
*[[Field Emission SEM 1 (FEI Sirion)]]<br />
*[[Molecular Vapor Deposition]]<br />
*[[Plasma Activation (EVG 810)]]<br />
||<br />
*Wet Benches<br />
**[[Acid Benches]]<br />
**[[Solvent Benches]]<br />
**[[Photoresist Spin Coat Benches]]<br />
**[[Develop Wet Benches]]<br />
|}</div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Aidan_Hopkins&diff=159017Aidan Hopkins2021-07-13T15:30:01Z<p>Hopkins a: </p>
<hr />
<div>{{staff|{{PAGENAME}}<br />
|position = Facility Staff Manager<br />
|room = 1109B<br />
|phone = (805) 893-2343<br />
|cell = (805) 450-2890<br />
|email = hopkins@ece.ucsb.edu<br />
}}<br />
<br />
=About=<br />
Aidan moved to Santa Barbara in 2000 to attend college at UCSB. During his junior year Aidan was hired part time to help out with the Engineering II cleanroom. Over the next year and half Aidan helped with the transition of moving the cleanroom to the Engineering Science Building. Once he graduated in 2005, Aidan was hired on full time as an Assistant Development Engineer. Aidan gained valuable experience supporting the lab on both the equipment and facility side and in 2012 he became a Senior Development Engineer. In 2017 Aidan became the Facility Staff Manager.<br />
<br />
=Tools=<br />
Aidan Hopkins is in charge of the following tools: <br />
{|<br />
|- valign="top"<br />
| width="300" |<br />
*[[Vacuum Sealer]]<br />
*[[Dicing Saw (ADT)]]<br />
*[[Wire Saw (Takatori)]]<br />
*[[Field Emission SEM 1 (FEI Sirion)]]<br />
*[[Molecular Vapor Deposition]]<br />
*[[Plasma Activation (EVG 810)]]<br />
||<br />
*Wet Benches<br />
**[[Acid Benches]]<br />
**[[Solvent Benches]]<br />
**[[Photoresist Spin Coat Benches]]<br />
**[[Develop Wet Benches]]<br />
|}</div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Aidan_Hopkins&diff=159016Aidan Hopkins2021-07-13T15:28:04Z<p>Hopkins a: /* About */</p>
<hr />
<div>{{staff|{{PAGENAME}}<br />
|position = Assistant Development Engineer<br />
|room = 1109A<br />
|phone = (805) 839-3918x208<br />
|cell = <br />
|email = hopkins@ece.ucsb.edu<br />
}}<br />
<br />
=About=<br />
Aidan moved to Santa Barbara in 2000 to attend college at UCSB. During his junior year Aidan was hired part time to help out with the Engineering II cleanroom. Over the next year and half Aidan helped with the transition of moving the cleanroom to the Engineering Science Building. Once he graduated in 2005, Aidan was hired on full time as an Assistant Development Engineer. Aidan gained valuable experience supporting the lab on both the equipment and facility side and in 2012 he became a Senior Development Engineer. In 2017 Aidan became the Facility Staff Manager.<br />
<br />
=Tools=<br />
Aidan Hopkins is in charge of the following tools: <br />
{|<br />
|- valign="top"<br />
| width="300" |<br />
*[[Vacuum Sealer]]<br />
*[[Dicing Saw (ADT)]]<br />
*[[Wire Saw (Takatori)]]<br />
*[[Field Emission SEM 1 (FEI Sirion)]]<br />
*[[Molecular Vapor Deposition]]<br />
*[[Plasma Activation (EVG 810)]]<br />
||<br />
*Wet Benches<br />
**[[Acid Benches]]<br />
**[[Solvent Benches]]<br />
**[[Photoresist Spin Coat Benches]]<br />
**[[Develop Wet Benches]]<br />
|}</div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=ADT_7100_-_Initial_Setup_Before_Cutting&diff=158995ADT 7100 - Initial Setup Before Cutting2021-07-02T16:50:01Z<p>Hopkins a: </p>
<hr />
<div>=== Install Your Blade and Flange ===<br />
# Right click on the blade icon in the lower left corner of the screen and select 'Blade Change'.<br />
# Open the dicing saw cover and place the interlock defeating key in the door interlock.<br />
# Grab your blade/flange (with the grabbing tool or hand) and CAREFULLY place it onto the spindle. This should require very little force. If the flange doesn't easily slide onto the spindle please contact me immediately.<br />
# Once you have installed your blade and flange onto the spindle you must secure it with the lock nut. To do this, line up any of the two holes on the lock nut with the two pins on the two piece torque wrench tool. Hold the back part of the wrench in place with one hand and turn the front part of the wrench clockwise with the other hand. Once the lock nut is hand tight you'll have to crank on the torque wrench until you hear a click. That should be the appropriate amount of torque to keep the flange on the spindle.<br />
# From the 'Blade Selection' drop down menu, choose blade you just installed. If you are using a different flange diameter from the one selected in the software click the 'Change Flange' box and manually enter in the new flange diameter. Click 'Done' and then click 'Finish' in the lower left dialogue box. <br />
# DO NOT STICK YOUR HANDS INTO THE SYSTEM! The saw will eventually start to rotate and go through its blade exposure measurement sequence.<br />
# Once it says 'Blade change completed' inside the dialogue box you can check the three water sources.<br />
<br />
=== Adjust the Cut Water ===<br />
# BE EXTREMELY CAREFUL! The spindle is still rotating! Carefully pull the spindle cover lock to the left and open the spindle cover. <br />
# Press the 'Water Adjust' to turn on the three different water sources. Verify that the Cut water is being forked by the blade (you should see a stream of water in front of the blade and one behind it). The Cut water should be hitting the blade/flange at approximately 7pm if the blade was a clock. If adjustments are needed, you can move the Cut water nozzle by holding the knob behind the nozzle with one hand and turning the top knob above counter clockwise. This will unlock the Cut water nozzle and give you free range of motion. Make sure you do not rotate the Cut water nozzle up into the blade! Once the Cut water looks good you can lock it in place by turning the top knob clockwise until it's tight. <br />
# Verify that the flow rates of the Cut water, Clean jets, and Spray bars are 0.9 LPM, 0.8 LPM, and 0.8 LPM respectively. You can turn down the flow rates by adjusting the three small regulator knobs below the computer monitor. Just make sure to return the flow rates to their default values before ending your dicing session. <br />
# Once the water situation looks good you can right click on the spindle speedometer in the top right of the screen and choose 'Operate'. This will turn the spindle off. Once the spindle has reached 0 RPM you can pull the interlock key and close the dicing saw cover. <br />
<br />
=== Initialize System ===<br />
# After your initial blade change you must go to User =>System Init. This will initialize the chuck and saw and get the system ready to accept your sample. <br />
# Once, the screen stops flashing yellow you can choose one of two routes. You can either create or load a recipe or load your sample. <br />
<br />
=== Create a Recipe ===<br />
# To create a recipe, click on the book icon (Programming Workspace). <br />
# In order to create a recipe in the software you must duplicate an old recipe. You can either duplicate a group/company member's recipe or open the 'RECIPES' folder on the left hand side of the software and select 'Recipe_APC'. <br />
# Click 'Duplicate Recipe' and create a recipe name. Make sure you save your recipe in any other folder besides the 'RECIPES' folder. You can either find your folder by using the drop down menu or you can create a new folder name by typing into the 'Folder' box. Click 'Ok'.<br />
#Five parameters you need to enter on your "homepage" are: blade (double click entry box to access drop down menu), wafer width and length (make sure orientation is correct if you're dicing a rectangular or elongated sample).<br />
#Click on the 'General' tab on the top left part of the recipe window.<br />
#Four parameters you need to enter are 'cut speed', 'overtravel', 'spindle speed', and 'height check rate'. For cut speed (how fast the saw travels across your sample), there are ranges developed here at UCSB which are posted on the wall to the left of the saw. As a general rule of thumb start on the slower side of the range and verify cut quality before turning up the speed. Overtravel is the distance the saw travels before each cut before it reaches your sample. This parameter prevents the saw from lowering directing onto the edge of your sample (which could potentially break the blade or crack the sample). We generally use an overtravel value of 7mm for any substrate 700um or less. Users dicing thicker samples should increase this value. Make sure you account for the curvature of the blade! Spindle speed is how fast the spindle rotates (kRPMs). Recommended spindle speeds are posted on the same sheet as the cut speeds. Height check rate is the amount of cuts the saw makes before it moves over the optical sensor to measure the exposure of the blade. The significance of this is that every time the system does an exposure measurement and your blade exposure decreases, the saw lowers to accommodate for the blade wear. If you allow for too many cuts in between measurements (i.e. this value is too high) you will notice that your cuts won't be going all the way through your sample. For harder substrates like sapphire or thick GaN you want the blade exposure to update every 1-2 cuts in order to stay up with the blade wear. For silicon you can turn this value up to 40 or more.<br />
#Click 'Save'.<br />
#Select 'Auto' => 'Define job'. Scroll down and find your recipe. Recipes are in alphabetical order based on groups. Click 'Apply' and then 'Ok'. Make sure your recipe shows up on the top of the software window!<br />
<br />
===Load Your Sample and Align===<br />
#Click the 'Load Wafer' button (yellow arrow).<br />
#Ensure that there are no large particles/debris on the chuck. It is recommended to use the DI and compressed air spray gun to clean off the chuck. If you hold down both the water and air buttons simultaneously the gun will act like a pressure washer.<br />
#Load your tape frame and sample face up (tacky side up!) and slide the two notches of the tape frame underneath the two pin heads at the back of the chuck. There is a magnet in front of the chuck that will help hold the frame in place.<br />
#Click 'Finish'. Watch your hands! The chuck will move underneath the camera.<br />
#Click 'Manual Alignment' and follow the directions in the dialogue box on the left. There are three different magnifications (L, M, H). It is recommended to click on low (L) so you have a larger field of view.<br />
#Use the 4 movement arrows to move to and select a right alignment point (double click on a feature to automatically move the green crosshair). Once you have selected your right alignment point click 'Next'. The camera will automatically move to the left side of your sample and prompt you to select a left alignment point. Make sure you select a feature in the same row as the one you selected for your right alignment mark otherwise you could cross align rows. Click 'Next' and your sample will be aligned to your two selected points. Click 'Finish' to complete alignment, click 'Next' to make adjustments to alignment marks.<br />
#After finishing alignment you will be prompted to 'Define Cut Position'. This is the spot where the saw will first enter your sample. Your top most cut. Note: if you are dicing a full wafer or non rectangular piece make sure you define this cut position in X at the right most part of your sample. When you define this point every cut will start at this position in the X dimension. If you define this position at the edge of your sample where the diameter is smaller you will cause the saw to come down on your sample in areas where the diameter is larger.<br />
#Click 'Finish' and a cut map of all your cuts will appear on the sample representation in the software (top left corner of the screen). Ensure that all the cuts are in the appropriate spots. To do this, move back over to the middle of your wafer or sample. Change the movement speed from 'Fast mode' to 'Index' by clicking on the 'F' in the middle of the four movement arrows until you see 'I'. Once you're in 'Index mode' every time you click the up or down of the movement arrows the camera will jump from cut to cut across your sample. Verify every cut position looks right. To make changes to the cut map, you will have to go back to the programming workspace and edit (and save) your recipe. Once you're done with the edit you must reload the recipe and click 'Manual Alignment' again. The camera should move to the original cut position. Click 'Finish' and the new cut map will appear.<br />
<br />
===Manual Y-Offset===<br />
Before dicing your wafer it is recommended you do "manual y-offset". This is especially true if you look at the log book and the previous user brought in their own blade (a non 2.187 blade). This means that the cut street could be off by a couple millimeters in the y dimension from where you set it.<br />
<br />
To perform a manual y-offset, click the right eyeball icon (to the right of manual alignment). The software will prompt you to move to a "single cut position and click next". It is recommended you do this in two steps. For your first cut, move the camera somewhere above or below your sample (into the tape). This will prevent any damage to devices if the previous user created a large offset. Click 'Next' and the will prompt you to turn on the spindle (if it isn't on already). Once you click 'Ok' the saw will do one more exposure update and make a cut where you initially moved the camera to. Once the saw is done with the cut the camera will move back over it. If you do not see a cut on the screen you'll have to move the camera up or down to find it. Once you do see the cut, place the green crosshairs right in the middle of the cut street. You can click and drag the blue box for reference and also to measure the cut width. Once the green crosshairs are centered on the cut click 'Finish'. Your coarse manual y-offset will be completed. <br />
<br />
At this point your alignment can still be off by 5-10um because the tape will pull apart when cut which makes it hard to find the exact middle. If you want even better alignment click 'Manual y-offset' again and move somewhere on your sample without any important features or devices. Click 'Next' and the saw will make another cut. Now that it is cutting into something more rigid you'll be able to align the green crosshairs more accurately.<br />
<br />
===Cut Wafer===<br />
After completing your manual y-offset you are ready to cut. At this point you can do any final verifications on your wafer but as soon as you click the 'Wafer Full Cut' button (red wafer icon near the top right of the screen) the saw will start cutting.<br />
<br />
Final verification tip: Clicking the 'Wafer Full Cut' button during a cut will cause the saw to finish the current cut and then bring the camera back over it once it's completed. This is a good way of doing one last verification that the saw is cutting in the right position. This is not necessary and you should be fine as long as you previously verified your cuts after defining the cut position and you completed your manual y-offset alignment.</div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=ADT_7100_-_Initial_Setup_Before_Cutting&diff=158994ADT 7100 - Initial Setup Before Cutting2021-07-02T16:35:53Z<p>Hopkins a: /* Manual Y-Offset */</p>
<hr />
<div>=== Install Your Blade and Flange ===<br />
# Right click on the blade icon in the lower left corner of the screen and select 'Blade Change'.<br />
# Open the dicing saw cover and place the interlock defeating key in the door interlock.<br />
# Grab your blade/flange (with the grabbing tool or hand) and CAREFULLY place it onto the spindle. This should require very little force. If the flange doesn't easily slide onto the spindle please contact me immediately.<br />
# Once you have installed your blade and flange onto the spindle you must secure it with the lock nut. To do this, line up any of the two holes on the lock nut with the two pins on the two piece torque wrench tool. Hold the back part of the wrench in place with one hand and turn the front part of the wrench clockwise with the other hand. Once the lock nut is hand tight you'll have to crank on the torque wrench until you hear a click. That should be the appropriate amount of torque to keep the flange on the spindle.<br />
# From the 'Blade Selection' drop down menu, choose blade you just installed. If you are using a different flange diameter from the one selected in the software click the 'Change Flange' box and manually enter in the new flange diameter. Click 'Done' and then click 'Finish' in the lower left dialogue box. <br />
# DO NOT STICK YOUR HANDS INTO THE SYSTEM! The saw will eventually start to rotate and go through its blade exposure measurement sequence.<br />
# Once it says 'Blade change completed' inside the dialogue box you can check the three water sources.<br />
<br />
=== Adjust the Cut Water ===<br />
# BE EXTREMELY CAREFUL! The spindle is still rotating! Carefully pull the spindle cover lock to the left and open the spindle cover. <br />
# Press the 'Water Adjust' to turn on the three different water sources. Verify that the Cut water is being forked by the blade (you should see a stream of water in front of the blade and one behind it). The Cut water should be hitting the blade/flange at approximately 7pm if the blade was a clock. If adjustments are needed, you can move the Cut water nozzle by holding the knob behind the nozzle with one hand and turning the top knob above counter clockwise. This will unlock the Cut water nozzle and give you free range of motion. Make sure you do not rotate the Cut water nozzle up into the blade! Once the Cut water looks good you can lock it in place by turning the top knob clockwise until it's tight. <br />
# Verify that the flow rates of the Cut water, Clean jets, and Spray bars are 0.9 LPM, 0.8 LPM, and 0.8 LPM respectively. You can turn down the flow rates by adjusting the three small regulator knobs below the computer monitor. Just make sure to return the flow rates to their default values before ending your dicing session. <br />
# Once the water situation looks good you can right click on the spindle speedometer in the top right of the screen and choose 'Operate'. This will turn the spindle off. Once the spindle has reached 0 RPM you can pull the interlock key and close the dicing saw cover. <br />
<br />
=== Initialize System ===<br />
# After your initial blade change you must go to User =>System Init. This will initialize the chuck and saw and get the system ready to accept your sample. <br />
# Once, the screen stops flashing yellow you can choose one of two routes. You can either create or load a recipe or load your sample. <br />
<br />
=== Create a Recipe ===<br />
# To create a recipe, click on the book icon (Programming Workspace). <br />
# In order to create a recipe in the software you must duplicate an old recipe. You can either duplicate a group/company member's recipe or open the 'RECIPES' folder on the left hand side of the software and select 'Recipe_APC'. <br />
# Click 'Duplicate Recipe' and create a recipe name. Make sure you save your recipe in any other folder besides the 'RECIPES' folder. You can either find your folder by using the drop down menu or you can create a new folder name by typing into the 'Folder' box. Click 'Ok'.<br />
#Five parameters you need to enter on your "homepage" are: blade (double click entry box to access drop down menu), wafer width and length (make sure orientation is correct if you're dicing a rectangular or elongated sample).<br />
#Click on the 'General' tab on the top left part of the recipe window.<br />
#Four parameters you need to enter are 'cut speed', 'overtravel', 'spindle speed', and 'height check rate'. For cut speed (how fast the saw travels across your sample), there are ranges developed here at UCSB which are posted on the wall to the left of the saw. As a general rule of thumb start on the slower side of the range and verify cut quality before turning up the speed. Overtravel is the distance the saw travels before each cut before it reaches your sample. This parameter prevents the saw from lowering directing onto the edge of your sample (which could potentially break the blade or crack the sample). We generally use an overtravel value of 7mm for any substrate 700um or less. Users dicing thicker samples should increase this value. Make sure you account for the curvature of the blade! Spindle speed is how fast the spindle rotates (kRPMs). Recommended spindle speeds are posted on the same sheet as the cut speeds. Height check rate is the amount of cuts the saw makes before it moves over the optical sensor to measure the exposure of the blade. The significance of this is that every time the system does an exposure measurement and your blade exposure decreases, the saw lowers to accommodate for the blade wear. If you allow for too many cuts in between measurements (i.e. this value is too high) you will notice that your cuts won't be going all the way through your sample. For harder substrates like sapphire or thick GaN you want the blade exposure to update every 1-2 cuts in order to stay up with the blade wear. For silicon you can turn this value up to 40 or more.<br />
#Click 'Save'.<br />
#Select 'Auto' => 'Define job'. Scroll down and find your recipe. Recipes are in alphabetical order based on groups. Click 'Apply' and then 'Ok'. Make sure your recipe shows up on the top of the software window!<br />
<br />
===Load Your Sample and Align===<br />
#Click the 'Load Wafer' button (yellow arrow).<br />
#Ensure that there are no large particles/debris on the chuck. It is recommended to use the DI and compressed air spray gun to clean off the chuck. If you hold down both the water and air buttons simultaneously the gun will act like a pressure washer.<br />
#Load your tape frame and sample face up (tacky side up!) and slide the two notches of the tape frame underneath the two pin heads at the back of the chuck. There is a magnet in front of the chuck that will help hold the frame in place.<br />
#Click 'Finish'. Watch your hands! The chuck will move underneath the camera.<br />
#Click 'Manual Alignment' and follow the directions in the dialogue box on the left. There are three different magnifications (L, M, H). It is recommended to click on low (L) so you have a larger field of view.<br />
#Use the 4 movement arrows to move to and select a right alignment point (double click on a feature to automatically move the green crosshair). Once you have selected your right alignment point click 'Next'. The camera will automatically move to the left side of your sample and prompt you to select a left alignment point. Make sure you select a feature in the same row as the one you selected for your right alignment mark otherwise you could cross align rows. Click 'Next' and your sample will be aligned to your two selected points. Click 'Finish' to complete alignment, click 'Next' to make adjustments to alignment marks.<br />
#After finishing alignment you will be prompted to 'Define Cut Position'. This is the spot where the saw will first enter your sample. Your top most cut. Note: if you are dicing a full wafer or non rectangular piece make sure you define this cut position in X at the right most part of your sample. When you define this point every cut will start at this position in the X dimension. If you define this position at the edge of your sample where the diameter is smaller you will cause the saw to come down on your sample in areas where the diameter is larger.<br />
#Click 'Finish' and a cut map of all your cuts will appear on the sample representation in the software (top left corner of the screen). Ensure that all the cuts are in the appropriate spots. To do this, move back over to the middle of your wafer or sample. Change the movement speed from 'Fast mode' to 'Index' by clicking on the 'F' in the middle of the four movement arrows until you see 'I'. Once you're in 'Index mode' every time you click the up or down of the movement arrows the camera will jump from cut to cut across your sample. Verify every cut position looks right. To make changes to the cut map, you will have to go back to the programming workspace and edit (and save) your recipe. Once you're done with the edit you must reload the recipe and click 'Manual Alignment' again. The camera should move to the original cut position. Click 'Finish' and the new cut map will appear.<br />
<br />
===Manual Y-Offset===<br />
Before dicing your wafer it is recommended you do "manual y-offset". This is especially true if you look at the log book and the previous user brought in their own blade (a non 2.187 blade). This means that the cut street could be off by a couple millimeters in the y dimension from where you set it.<br />
<br />
To perform a manual y-offset, click the right eyeball icon (to the right of manual alignment). The software will prompt you to move to a "single cut position and click next". It is recommended you do this in two steps. For your first cut, move the camera somewhere above or below your sample (into the tape). This will prevent any damage to devices if the previous user created a large offset. Click 'Next' and the will prompt you to turn on the spindle (if it isn't on already). Once you click 'Ok' the saw will do one more exposure update and make a cut where you initially moved the camera to. Once the saw is done with the cut the camera will move back over it. If you do not see a cut on the screen you'll have to move the camera up or down to find it. Once you do see the cut, place the green crosshairs right in the middle of the cut street. You can click and drag the blue box for reference and also to measure the cut width. Once the green crosshairs are centered on the cut click 'Finish'. Your coarse manual y-offset will be completed. <br />
<br />
At this point your alignment can still be off by 5-10um because the tape will pull apart when cut which makes it hard to find the exact middle. If you want even better alignment click 'Manual y-offset' again and move somewhere on your sample without any important features or devices. Click 'Next' and the saw will make another cut. Now that it is cutting into something more rigid you'll be able to align the green crosshairs more accurately.</div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Wet_Benches&diff=158993Wet Benches2021-07-02T16:19:42Z<p>Hopkins a: /* HF/TMAH Processing Bench */</p>
<hr />
<div>In the lab we have a total of 16 wet benches. They are divided into the following 8 types as listed in the following table of contents.<br />
<br />
==General Information==<br />
<br />
*Abandoned glassware will be collected and no returned<br />
*Containers MUST be labeled with Chemical and User/Group name at '''all times'''.<br />
*Another warning about safety gear<br />
*Built-in Hotplate calibrations done weekly<br />
<br />
==Solvent Cleaning Benches==<br />
{{tool|<br />
|name=Solvent Cleaning Benches<br />
|picture=SolventBench.jpg<br />
|type = Wet Processing<br />
|super= Mike Day<br />
|location=Bays 5, 6 & 7<br />
|description = Custom Solvent Wet Bench<br />
|manufacturer = Pure Aire Corporation<br />
|materials = <br />
}}<br />
===About===<br />
The facility contains 4 stainless steel solvent benches for general processing using organic solvents. All solvent waste (except for certain chemicals that are collected) are poured into cups and centrally collected. The benches consist of 2 embedded variable power Crest-ultrasonic units, one kept at 70°C for heating resist strippers and the other kept at room temperature for general solvent work. Laminar flow fume hoods with hepa filtration. Nitrogen guns are also on both sides of the bench for drying samples. Digital stirring hotplates are included for heating and stirring of resist stripers only (No solvent heating). POLOS spin dryers are included in the benches. All processes are done in user-supplied glassware. Solvents are stored in large steel flammable materials cabinets. Two people may use the bench at a time and protective gear such as proper gloves must be used. Solvents supplied by the laboratory are: Acetone, Methanol, Isopropanol, MIBK, MEK, Toluene, EBR100. PR strippers supplied by the lab are: 1165 (NMP), AZ300T (NMP + TMAH), PRX-127. Other chemicals should be OK'd by laboratory staff prior to use in the laboratory. <br />
<br />
===Detailed Specifications===<br />
<br />
*2 7" x 10" Crest Ultrasonic Tanks with heating / variable power<br />
*2 Nitrogen guns for sample drying<br />
*Solvent based processing; '''NO SOLVENT HEATING'''<br />
*Organic material removal up to 80°C<br />
*Cyanide-based plating and etching ('''NO ACIDS''' at bench)<br />
*Digital hot plate stirrers<br />
*POLOS rinse dryers<br />
<br />
<br clear="all"><br />
<br />
==Develop Benches==<br />
{{tool|<br />
|name=Develop Benches<br />
|picture=DevelopBench.jpg<br />
|type = Wet Processing<br />
|super= Mike Day<br />
|location=Bays 6 & 7<br />
|description = Custom Developer Bench<br />
|manufacturer = Pure Aire Corporation<br />
|materials = <br />
}} <br />
===About===<br />
<br />
The facility contains 3 polypropylene Developing Benches for photolithographic development using TMAH / TEAH / KOH based developers. All is actively neutralized. The benches consist of two sinks with DI water hook ups and industrial water plenum flushes. Laminar flow fume hoods with hepa filtration. Nitrogen guns are also on both sides of the bench for drying samples. Digital hotplates are included for resist post exposure bakes or post develop hard bakes. POLOS spray puddle develop etch systems are included in the benches. All processes are done in user-supplied glassware. Two people may use the bench at a time and protective gear such as proper gloves must be used. Developers supplied by the laboratory include: AZ300MIF (0.26N TMAH developer), MF701 (0.24N TMAH developer), AZ400K (KOH based developer), pre-diluted AZ400K:DI 1:4. Other developers should be OK'd by laboratory staff prior to use in the laboratory. <br />
<br />
===Detailed Specifications===<br />
<br />
*2 Sinks, DI water<br />
*2 Nitrogen guns for sample drying<br />
*'''NO SOLVENTS or STRIPPERS''' in bench<br />
*Class 100<br />
*Hot plates for post bakes<br />
*POLOS Spray-Puddle-Develop-Rinse-Dry systems<br />
<br />
<br clear="all"><br />
<br />
==Spin Coat Benches==<br />
{{tool|{{PAGENAME}}<br />
|name=Spin Coat Benches<br />
|picture=SpinBench.jpg<br />
|type = Wet Processing<br />
|super= Mike Day<br />
|location=Bays 6 & 7<br />
|description = Custom Photoresist Spin Coat Bench<br />
|manufacturer = Pure Aire Corporation<br />
|materials = <br />
}} <br />
===About===<br />
<br />
The facility contains 3 stainless steel solvent benches for photoresist spin coating. <br />
<br />
The benches consist each of 2 integrated Headway PWM32 series photoresist spinners. Overhead and foot controls are provided. 8 preprogrammed recipes and 2 user-programmable recipes are offered. Automatic wafer lifting and centering stations are offered for spinning large wafers up to 8” in diameter. <br />
<br />
6” or 8” Cee ultra-flat hotplates with 0.1°C temperature stability are preset for standard resist bake temperatures (90, 95, 100, 105, 110, 115°C). Other user-changeable hot plates are also provided. <br />
<br />
Nitrogen guns are also on both sides of the bench. <br />
<br />
Large resist bottles are stored in a refrigerator amd small user bottles are stored by group in a ventilated steel cabinet. Waste pipets and resist soaked wipes are collected in containers on the fume-hood benches for disposal. <br />
<br />
A [https://signupmonkey.ece.ucsb.edu/wiki/index.php/Lithography_Recipes#Chemicals_Stocked_.2B_Datasheets list of stocked resists] appears on the [[Lithography Recipes|lithography processing]] web page. Other chemicals should be OK'd by laboratory staff prior to use in the laboratory. <br />
<br />
===Detailed Specifications===<br />
<br />
*Hepa filtered laminar flow for Class 100<br />
*2 Headway PWM32 spinners per bench, multi-step programming<br />
**8 preset spin programs, 2 user defineable<br />
**Variety of user-removable wafer chucks for 5 mm x 5 mm pieces to 6” wafers<br />
**Lifters for large wafer centering<br />
**Manual dispense of resist with pipettes; particle filtering available<br />
*Preset 0.1°C stable, ultra-flat hotplates <br />
**Bay 6: 90, 95, 105, 110, 115°C<br />
**Bay 7: 100, 135°C<br />
**Proximity and Vacuum baking possible, optional lid closure<br />
**Temperatures checked monthly, ±1°C. Please notify if temperature is out of spec.<br />
*'''NO WAX''' on hotplates<br />
**Use tin-foil to protect plate before using wax. Wax only allowed on user-variable hotplates.<br />
*Other hotplates for user defined temperatures<br />
<br />
==Toxic Corrosive Benches==<br />
{{tool|<br />
|name=Toxic Corrosive Bench<br />
|picture=ToxicBench.jpg<br />
|type = Wet Processing<br />
|super= Mike Day<br />
|location=Bay 5<br />
|description = Custom Acid Wet Bench<br />
|manufacturer = Pure Aire Corporation<br />
|materials = <br />
}} <br />
===About===<br />
The facility contains 2 polypropylene toxic corrosive benches for general wet processing using Acids and Bases. All waste (except for certain chemicals that are collected) are actively neutralized. The benches consist of two sinks with DI water hook ups and industrial water plenum flushes. Laminar flow fume hoods with hepa filtration. Nitrogen guns are also on both sides of the bench for drying samples. Digital stirring hotplates and/or small benchtop ultrasonic units are included for agitation and heating during the process on select benches. POLOS spin rinse dryers or spray puddle etch systems are included in the benches. Custom-built spray etchers (with bench supplied nitrogen) can also be used. Commonly used acids and bases such as H<sub>2</sub>O<sub>2</sub>, NH<sub>4</sub>OH, HCl, H<sub>2</sub>SO<sub>4</sub>, and H<sub>3</sub>PO<sub>4</sub> can be dispensed into glassware using pipets connected to small bottles in the process wells at the back of the bench. All processes are done in user-supplied glassware. Acids and Bases are stored in separate cabinets and collection/disposal policies are posted. Two people may use the bench at a time and protective gear such as proper gloves must be used. Acids supplied by the laboratory are: H<sub>2</sub>SO<sub>4</sub>, HNO<sub>3</sub>, H<sub>3</sub>PO<sub>4</sub>, 1.0 M Citric Acid, Acetic Acid, HCl, Chrome mask etchant, Aluminum Etchants A and D, Gold Etchant (TFA), and Nickel Etchant (TFB). Bases supplied by the lab are: NH<sub>4</sub>OH, NaOH, KOH, and H<sub>2</sub>O<sub>2</sub>. Other chemicals should be OK'd by laboratory staff prior to use in the laboratory.<br />
<br />
===Detailed Specifications===<br />
<br />
*2 Sinks, DI water<br />
*2 Nitrogen guns for sample drying<br />
*Digital hot-plate stirrers<br />
*Ultrasonic Baths<br />
*'''NO SOLVENTS '''<br />
*HF & TMAH NOT permitted at these benches<br />
*POLOS Spray-Spin-Rinse systems<br />
*Hepa Filtered Laminar Flow Hoods<br />
<br />
<br clear="all"><br />
==Wafer Toxic Corrosive Benches==<br />
{{tool|<br />
|name=Wafer Toxic Corrosive Bench<br />
|picture=WaferToxicBench.jpg<br />
|type = Wet Processing<br />
|super= Aidan Hopkins<br />
|location=Bay 4<br />
|description = ?<br />
|manufacturer = ?<br />
|materials = <br />
}} <br />
===About===<br />
This bench has vertical baths for processing multiple wafers at a time, and is situated opposite the [[Tube Furnace (Tystar 8300)|Tystar Thermal Oxidation furnaces]] in order to perform the necessary cleaning of Silicon wafers prior to oxidation.<br />
<br />
Please contact the supervisor for training on this bench, which includes use of the heater controllers, bubblers etc.<br />
<br />
[[Spin Rinse Dryer (SemiTool)|Spin-Rinse Dryers]] for automated DI water rinse and N2 Dry of full cassettes are located adjacent to this bench.<br />
<br />
===Detailed Specifications===<br />
<br />
*HF Bath, vertical<br />
*NanoStrip bath, Vertical<br />
**Heated Bath, typically 70°C during use.<br />
*Quick-Dump-Rinse (QDR) bath, vertical<br />
**Rapid DI water rinse of multiple wafers<br />
*KOH bath, vertical<br />
**Heated, Typically ~80-90°C during Silicon etching.<br />
**Covered for water recapture<br />
**N2 Bubbler for improved etch uniformity<br />
**Up to 9 wafers at a time<br />
*TMAH Bath, Vertical<br />
*Numerous wafer holders and custom cassette sizes stored at the bench for general use.<br clear="all"><br />
<br />
==HF/TMAH Processing Bench==<br />
{{tool|<br />
|name=HF/TMAH Processing Bench<br />
|picture=HFBench.jpg<br />
|type = Wet Processing<br />
|super= Mike Day<br />
|location=Bay 5<br />
|description = ?<br />
|manufacturer = Pure Aire Corporation<br />
}}<br />
'''NOTE: Proper safety gear must be worn at all times when using the Acid Benches. For the HF benches this includes an apron and face shield. Failure to abide by this rule will result in immediate suspension from the lab. NO WARNINGS. PERIOD.'''<br />
===About===<br />
<br />
===Detailed Specifications===<br />
<br />
*2 Sinks, DI water<br />
*2 Nitrogen guns for sample drying<br />
*Digital hot-plate stirrers<br />
*Ultrasonic Baths<br />
*'''NO SOLVENTS '''<br />
*HF Processing limited to these two benches<br />
*POLOS Spray-Spin-Rinse systems<br />
*Hepa Filtered Laminar Flow Hoods<br />
<br />
<br clear="all"><br />
<br />
==Plating Bench==<br />
{{tool|<br />
|name=Plating Bench<br />
|picture=PlatingBench.jpg<br />
|type = Wet Processing<br />
|super= Mike Day<br />
|location=Bay 5<br />
|description = ?<br />
|manufacturer = Pure Aire Corporation<br />
|materials = <br />
}}<br />
===About===<br />
Custom plating may be performed at this bench. Please contact staff for more info and for allowed chemicals.<br />
<br />
===Detailed Specifications===<br />
<br />
''To Be Added''<br clear="all"><br />
<br />
== Automated Wet-processing Spinners (POLOS) ==<br />
<br />
=== General Information ===<br />
The POLOS spinners, installed on various Solvent, Acid/Base and Develop benches, allow for wafer spinning while applying wet chemistry. Users may program the spinners with custom programs. <br />
<br />
=== Develop Bench POLOS Spinners ===<br />
These POLOS spinners are hooked up to pressurized vessels for developer chemicals, and have closed lids with nozzles for fluid/nitrogen delivery. This enables automated spray/puddle developing. In addition, users can spin-drying after manual development. - especially helpful for larger wafers (eg. 100mm) which are more difficult to dry by hand.<br />
<br />
=== Solvent Bench POLOS Spinners ===<br />
These spinners are uncovered, allowing users to use our solvent squirt bottles & nitrogen guns for cleaning samples while spinning, which improves wafer cleanliness considerably. Several non-contact chucks for 100mm and 150mm wafers are available, which makes solvent cleaning the underside of these wafers especially useful and effective, without affecting any top-side photoresist, lithography or patterning.<br />
<br />
=== Acid/Base/HF Bench POLOS Spinners ===<br />
''To be Added''</div>Hopkins ahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Wet_Benches&diff=158992Wet Benches2021-07-02T16:18:47Z<p>Hopkins a: /* About */</p>
<hr />
<div>In the lab we have a total of 16 wet benches. They are divided into the following 8 types as listed in the following table of contents.<br />
<br />
==General Information==<br />
<br />
*Abandoned glassware will be collected and no returned<br />
*Containers MUST be labeled with Chemical and User/Group name at '''all times'''.<br />
*Another warning about safety gear<br />
*Built-in Hotplate calibrations done weekly<br />
<br />
==Solvent Cleaning Benches==<br />
{{tool|<br />
|name=Solvent Cleaning Benches<br />
|picture=SolventBench.jpg<br />
|type = Wet Processing<br />
|super= Mike Day<br />
|location=Bays 5, 6 & 7<br />
|description = Custom Solvent Wet Bench<br />
|manufacturer = Pure Aire Corporation<br />
|materials = <br />
}}<br />
===About===<br />
The facility contains 4 stainless steel solvent benches for general processing using organic solvents. All solvent waste (except for certain chemicals that are collected) are poured into cups and centrally collected. The benches consist of 2 embedded variable power Crest-ultrasonic units, one kept at 70°C for heating resist strippers and the other kept at room temperature for general solvent work. Laminar flow fume hoods with hepa filtration. Nitrogen guns are also on both sides of the bench for drying samples. Digital stirring hotplates are included for heating and stirring of resist stripers only (No solvent heating). POLOS spin dryers are included in the benches. All processes are done in user-supplied glassware. Solvents are stored in large steel flammable materials cabinets. Two people may use the bench at a time and protective gear such as proper gloves must be used. Solvents supplied by the laboratory are: Acetone, Methanol, Isopropanol, MIBK, MEK, Toluene, EBR100. PR strippers supplied by the lab are: 1165 (NMP), AZ300T (NMP + TMAH), PRX-127. Other chemicals should be OK'd by laboratory staff prior to use in the laboratory. <br />
<br />
===Detailed Specifications===<br />
<br />
*2 7" x 10" Crest Ultrasonic Tanks with heating / variable power<br />
*2 Nitrogen guns for sample drying<br />
*Solvent based processing; '''NO SOLVENT HEATING'''<br />
*Organic material removal up to 80°C<br />
*Cyanide-based plating and etching ('''NO ACIDS''' at bench)<br />
*Digital hot plate stirrers<br />
*POLOS rinse dryers<br />
<br />
<br clear="all"><br />
<br />
==Develop Benches==<br />
{{tool|<br />
|name=Develop Benches<br />
|picture=DevelopBench.jpg<br />
|type = Wet Processing<br />
|super= Mike Day<br />
|location=Bays 6 & 7<br />
|description = Custom Developer Bench<br />
|manufacturer = Pure Aire Corporation<br />
|materials = <br />
}} <br />
===About===<br />
<br />
The facility contains 3 polypropylene Developing Benches for photolithographic development using TMAH / TEAH / KOH based developers. All is actively neutralized. The benches consist of two sinks with DI water hook ups and industrial water plenum flushes. Laminar flow fume hoods with hepa filtration. Nitrogen guns are also on both sides of the bench for drying samples. Digital hotplates are included for resist post exposure bakes or post develop hard bakes. POLOS spray puddle develop etch systems are included in the benches. All processes are done in user-supplied glassware. Two people may use the bench at a time and protective gear such as proper gloves must be used. Developers supplied by the laboratory include: AZ300MIF (0.26N TMAH developer), MF701 (0.24N TMAH developer), AZ400K (KOH based developer), pre-diluted AZ400K:DI 1:4. Other developers should be OK'd by laboratory staff prior to use in the laboratory. <br />
<br />
===Detailed Specifications===<br />
<br />
*2 Sinks, DI water<br />
*2 Nitrogen guns for sample drying<br />
*'''NO SOLVENTS or STRIPPERS''' in bench<br />
*Class 100<br />
*Hot plates for post bakes<br />
*POLOS Spray-Puddle-Develop-Rinse-Dry systems<br />
<br />
<br clear="all"><br />
<br />
==Spin Coat Benches==<br />
{{tool|{{PAGENAME}}<br />
|name=Spin Coat Benches<br />
|picture=SpinBench.jpg<br />
|type = Wet Processing<br />
|super= Mike Day<br />
|location=Bays 6 & 7<br />
|description = Custom Photoresist Spin Coat Bench<br />
|manufacturer = Pure Aire Corporation<br />
|materials = <br />
}} <br />
===About===<br />
<br />
The facility contains 3 stainless steel solvent benches for photoresist spin coating. <br />
<br />
The benches consist each of 2 integrated Headway PWM32 series photoresist spinners. Overhead and foot controls are provided. 8 preprogrammed recipes and 2 user-programmable recipes are offered. Automatic wafer lifting and centering stations are offered for spinning large wafers up to 8” in diameter. <br />
<br />
6” or 8” Cee ultra-flat hotplates with 0.1°C temperature stability are preset for standard resist bake temperatures (90, 95, 100, 105, 110, 115°C). Other user-changeable hot plates are also provided. <br />
<br />
Nitrogen guns are also on both sides of the bench. <br />
<br />
Large resist bottles are stored in a refrigerator amd small user bottles are stored by group in a ventilated steel cabinet. Waste pipets and resist soaked wipes are collected in containers on the fume-hood benches for disposal. <br />
<br />
A [https://signupmonkey.ece.ucsb.edu/wiki/index.php/Lithography_Recipes#Chemicals_Stocked_.2B_Datasheets list of stocked resists] appears on the [[Lithography Recipes|lithography processing]] web page. Other chemicals should be OK'd by laboratory staff prior to use in the laboratory. <br />
<br />
===Detailed Specifications===<br />
<br />
*Hepa filtered laminar flow for Class 100<br />
*2 Headway PWM32 spinners per bench, multi-step programming<br />
**8 preset spin programs, 2 user defineable<br />
**Variety of user-removable wafer chucks for 5 mm x 5 mm pieces to 6” wafers<br />
**Lifters for large wafer centering<br />
**Manual dispense of resist with pipettes; particle filtering available<br />
*Preset 0.1°C stable, ultra-flat hotplates <br />
**Bay 6: 90, 95, 105, 110, 115°C<br />
**Bay 7: 100, 135°C<br />
**Proximity and Vacuum baking possible, optional lid closure<br />
**Temperatures checked monthly, ±1°C. Please notify if temperature is out of spec.<br />
*'''NO WAX''' on hotplates<br />
**Use tin-foil to protect plate before using wax. Wax only allowed on user-variable hotplates.<br />
*Other hotplates for user defined temperatures<br />
<br />
==Toxic Corrosive Benches==<br />
{{tool|<br />
|name=Toxic Corrosive Bench<br />
|picture=ToxicBench.jpg<br />
|type = Wet Processing<br />
|super= Mike Day<br />
|location=Bay 5<br />
|description = Custom Acid Wet Bench<br />
|manufacturer = Pure Aire Corporation<br />
|materials = <br />
}} <br />
===About===<br />
The facility contains 2 polypropylene toxic corrosive benches for general wet processing using Acids and Bases. All waste (except for certain chemicals that are collected) are actively neutralized. The benches consist of two sinks with DI water hook ups and industrial water plenum flushes. Laminar flow fume hoods with hepa filtration. Nitrogen guns are also on both sides of the bench for drying samples. Digital stirring hotplates and/or small benchtop ultrasonic units are included for agitation and heating during the process on select benches. POLOS spin rinse dryers or spray puddle etch systems are included in the benches. Custom-built spray etchers (with bench supplied nitrogen) can also be used. Commonly used acids and bases such as H<sub>2</sub>O<sub>2</sub>, NH<sub>4</sub>OH, HCl, H<sub>2</sub>SO<sub>4</sub>, and H<sub>3</sub>PO<sub>4</sub> can be dispensed into glassware using pipets connected to small bottles in the process wells at the back of the bench. All processes are done in user-supplied glassware. Acids and Bases are stored in separate cabinets and collection/disposal policies are posted. Two people may use the bench at a time and protective gear such as proper gloves must be used. Acids supplied by the laboratory are: H<sub>2</sub>SO<sub>4</sub>, HNO<sub>3</sub>, H<sub>3</sub>PO<sub>4</sub>, 1.0 M Citric Acid, Acetic Acid, HCl, Chrome mask etchant, Aluminum Etchants A and D, Gold Etchant (TFA), and Nickel Etchant (TFB). Bases supplied by the lab are: NH<sub>4</sub>OH, NaOH, KOH, and H<sub>2</sub>O<sub>2</sub>. Other chemicals should be OK'd by laboratory staff prior to use in the laboratory.<br />
<br />
===Detailed Specifications===<br />
<br />
*2 Sinks, DI water<br />
*2 Nitrogen guns for sample drying<br />
*Digital hot-plate stirrers<br />
*Ultrasonic Baths<br />
*'''NO SOLVENTS '''<br />
*HF & TMAH NOT permitted at these benches<br />
*POLOS Spray-Spin-Rinse systems<br />
*Hepa Filtered Laminar Flow Hoods<br />
<br />
<br clear="all"><br />
==Wafer Toxic Corrosive Benches==<br />
{{tool|<br />
|name=Wafer Toxic Corrosive Bench<br />
|picture=WaferToxicBench.jpg<br />
|type = Wet Processing<br />
|super= Aidan Hopkins<br />
|location=Bay 4<br />
|description = ?<br />
|manufacturer = ?<br />
|materials = <br />
}} <br />
===About===<br />
This bench has vertical baths for processing multiple wafers at a time, and is situated opposite the [[Tube Furnace (Tystar 8300)|Tystar Thermal Oxidation furnaces]] in order to perform the necessary cleaning of Silicon wafers prior to oxidation.<br />
<br />
Please contact the supervisor for training on this bench, which includes use of the heater controllers, bubblers etc.<br />
<br />
[[Spin Rinse Dryer (SemiTool)|Spin-Rinse Dryers]] for automated DI water rinse and N2 Dry of full cassettes are located adjacent to this bench.<br />
<br />
===Detailed Specifications===<br />
<br />
*HF Bath, vertical<br />
*NanoStrip bath, Vertical<br />
**Heated Bath, typically 70°C during use.<br />
*Quick-Dump-Rinse (QDR) bath, vertical<br />
**Rapid DI water rinse of multiple wafers<br />
*KOH bath, vertical<br />
**Heated, Typically ~80-90°C during Silicon etching.<br />
**Covered for water recapture<br />
**N2 Bubbler for improved etch uniformity<br />
**Up to 9 wafers at a time<br />
*TMAH Bath, Vertical<br />
*Numerous wafer holders and custom cassette sizes stored at the bench for general use.<br clear="all"><br />
<br />
==HF/TMAH Processing Bench==<br />
{{tool|<br />
|name=HF/TMAH Processing Bench<br />
|picture=HFBench.jpg<br />
|type = Wet Processing<br />
|super= Aidan Hopkins<br />
|location=Bay 5<br />
|description = ?<br />
|manufacturer = Pure Aire Corporation<br />
}}<br />
'''NOTE: Proper safety gear must be worn at all times when using the Acid Benches. For the HF benches this includes an apron and face shield. Failure to abide by this rule will result in immediate suspension from the lab. NO WARNINGS. PERIOD.'''<br />
===About===<br />
<br />
===Detailed Specifications===<br />
<br />
*2 Sinks, DI water<br />
*2 Nitrogen guns for sample drying<br />
*Digital hot-plate stirrers<br />
*Ultrasonic Baths<br />
*'''NO SOLVENTS '''<br />
*HF Processing limited to these two benches<br />
*POLOS Spray-Spin-Rinse systems<br />
*Hepa Filtered Laminar Flow Hoods<br />
<br />
<br clear="all"><br />
<br />
==Plating Bench==<br />
{{tool|<br />
|name=Plating Bench<br />
|picture=PlatingBench.jpg<br />
|type = Wet Processing<br />
|super= Aidan Hopkins<br />
|location=Bay 5<br />
|description = ?<br />
|manufacturer = Pure Aire Corporation<br />
|materials = <br />
}}<br />
===About===<br />
Custom plating may be performed at this bench. Please contact staff for more info and for allowed chemicals.<br />
<br />
===Detailed Specifications===<br />
<br />
''To Be Added''<br clear="all"><br />
<br />
== Automated Wet-processing Spinners (POLOS) ==<br />
<br />
=== General Information ===<br />
The POLOS spinners, installed on various Solvent, Acid/Base and Develop benches, allow for wafer spinning while applying wet chemistry. Users may program the spinners with custom programs. <br />
<br />
=== Develop Bench POLOS Spinners ===<br />
These POLOS spinners are hooked up to pressurized vessels for developer chemicals, and have closed lids with nozzles for fluid/nitrogen delivery. This enables automated spray/puddle developing. In addition, users can spin-drying after manual development. - especially helpful for larger wafers (eg. 100mm) which are more difficult to dry by hand.<br />
<br />
=== Solvent Bench POLOS Spinners ===<br />
These spinners are uncovered, allowing users to use our solvent squirt bottles & nitrogen guns for cleaning samples while spinning, which improves wafer cleanliness considerably. Several non-contact chucks for 100mm and 150mm wafers are available, which makes solvent cleaning the underside of these wafers especially useful and effective, without affecting any top-side photoresist, lithography or patterning.<br />
<br />
=== Acid/Base/HF Bench POLOS Spinners ===<br />
''To be Added''</div>Hopkins a