Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Florine etch of the underneath layer)

ICP#1: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec
Date	Sample#	Etch Rate (nm/min)	Etch Selectivity (SiO2/PR)	Averaged Sidewall Angle (o)	SEM Images
1/28/2019	I11902	78.1	0.63		[1]
5/29/2019	I11904	71.1	0.58		[2]