Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Florine etch of the underneath layer)
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ICP#1: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec
Date
Sample#
Etch Rate (nm/min)
Etch Selectivity (SiO2/PR)
Averaged Sidewall Angle (
o
)
SEM Images
1/28/2019
I11902
78.1
0.63
[1]
5/29/2019
I11904
71.1
0.58
[2]
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